Publikationen
2013
Growth of (BGa)As, (BGa)P, (BGa)(AsP) and (BGaIn)P by MOVPE
N. Sommer, R. Buss, J. Ohlmann, T. Wegele, C. Jurecka, S. Liebich, B. Kunert, W. Stolz, K. Volz
J. Cryst. Growth 370 (2013), pp. 191 - 196
MOVPE growth of Ga(AsBi)/GaAs multi quantum well structures
P. Ludewig, N. Knaub, W. Stolz, K. Volz,
J. Cryst. Growth 370 (2013), pp. 186 - 190
4.35 kW peak power femtosecond pulse mode-locked VECSEL for supercontinuum generation
K. G. Wilcox, A. C. Tropper, H. E. Beere, D. A. Ritchie, B. Kunert, B. Heinen, and W. Stolz
Optics Express 21 (2) (2013), pp. 1599 - 1605
On the measurement of the thermal impedance in vertical-external-cavity surface-emitting lasers
J. Hader, T.-L. Wang, J. V. Moloney, B. Heinen, M. Koch, S. W. Koch, B. Kunert, and W. Stolz
J. Appl. Phys. 113 (15) (2013), 153102
Double-scaled disorder in Ga(N,As,P)/GaP multiquantum wells
C. Karcher, K. Jandieri, B. Kunert, R. Fritz, K. Volz, W. Stolz, F. Gebhard, S. D. Baranovskii, W. Heimbrodt
Journal of Luminescence 133 (2013), pp. 125 - 128
Nonexponential photoluminescence transients in a Ga(NAsP) lattice matched to a (001) silicon substrate
K. Jandieri, B. Kunert, S. Liebich, M. Zimprich, K. Volz, W. Stolz, F. Gebhard, and S. D. Baranovskii
Phys. Rev. B 87 (3) (2013), 035303
2012
Scanning transmission electron microscopy strain measurement from millisecond frames of a direct electron charge coupled device
K. Müller, H. Ryll, I. Ordavo, S. Ihle, L. Strüder, K. Volz, J. Zweck, H. Soltau, and A. Rosenauer
Appl. Phys. Lett. 101 (21) (2012), 212110
Grain Boundaries in a Lithium Aluminum Titanium Phosphate-Type Fast Lithium Ion Conducting Glass Ceramic: Microstructure and Nonlinear Ion Transport Properties
M. Gellert, K. I. Gries , Ch. Yada, F. Rosciano, K. Volz, and B. Roling
J. Phys. Chem. C 116 (43) (2012), pp. 22675 – 22678
Strain Measurement in Semiconductor Heterostructures by Scanning Transmission Electron Microscopy
K. Müller, A. Rosenauer, M. Schowalter, J. Zweck, R. Fritz and K. Volz
Microscopy and Microanalysis 18 (5) (2012), pp. 995 - 1009
Monolithic integration of high electron mobility InAs-based heterostructure on exact (001) Silicon using a GaSb/GaP accommodation layer
Appl. Phys. Lett. 101 (14) (2012),142111
Quantum design strategy pushes high-power vertical-external-cavity surface-emitting lasers beyond 100 W
T.-L. Wang, B. Heinen, J. Hader, C. Dineen, M. Sparenberg, A. Weber, B. Kunert, S. W. Koch, J. V. Moloney, M. Koch, W. Stolz
Laser & Photonics Reviews 6 (5) (2012), pp. L12 – L14
Efficiency-limiting processes in Ga(NAsP)/GaP quantum well lasers
N. Hossain, S. R. Jin, S. Liebich, M. Zimprich, K. Volz, B. Kunert, W. Stolz, and S. J. Sweeney
Appl. Phys. Lett. 101 (1) (2012), 011107
Energy scaling of compositional disorder in Ga(N,P,As)/GaP quantum well structures
K. Jandieri, M. K. Shakfa, S. Liebich, M. Zimprich, B. Kunert, C. Karcher, A. Chernikov, K. Volz, W. Stolz, M. Koch, S. Chatterjee, W. Heimbrodt, F. Gebhard, and S. D. Baranovskii
Phys. Rev. B 86 (12) (2012), 125318
Ultra-long palladium nanoworms by polymer grafts
S. Bokern, K. Volz, S. Agarwal, A. Greiner
Journal of Nanoparticle Research 14 (8) (2012), 1041
Growth study of nonpolar Zn1-xMgxO epitaxial films on a-plane bulk ZnO by plasma-assisted molecular beam epitaxy
B. Laumer, F. Schuster, M. Stutzmann, A. Bergmaier, G. Dollinger, S. Vogel, K. I. Gries, K. Volz, and M. Eickhoff
Appl. Phys. Lett. 101 (12) (2012), 122106
Passively modelocked VECSEL emitting 682 fs pulses with 5.1W of average output power
M. Scheller, T.-L. Wang, B. Kunert, W. Stolz, S. W. Koch, J. V. Moloney
Electronics Letters 48 (10) (2012), pp. 588 - 589
106W continuous-wave output power from a vertical-external-cavity surface-emitting laser (VECSEL)
B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, W. Stolz
Electronics Letters 48 (9) (2012), pp. 516 - 517
Methods of Electron Crystallography as Tools for Materials Analysis
W. Neumann, H. Kirmse, I. Häusler, C. Grosse, P. Moeck, S. Rouvimov, M. Beekman, R. Atkins, D. C. Johnson, K. Volz
Solid State Phenomena 186 (1) (2012), pp. 1 - 6
Synthesis and Characterization of Colloidal Fluorescent Silver Nanoclusters
S. Huang, C. Pfeiffer, J. Hollmann, S. Friede, J. Jin-Ching Chen, A. Beyer, B. Haas, K. Volz, W. Heimbrodt, J. M. Montenegro Martos, W. Chang, and W. J. Parak
Langmuir 28 (24) (2012), pp. 8915 - 8919
Temperature and pump power dependent photoluminescence characterization of MBE grown GaAsBi on GaAs
N. A. Riordan, C. Gogineni, S. R. Johnson, X. Lu, T. Tiedje, D. Ding, Y.-H. Zhang, R. Fritz, K. Kolata, S. Chatterjee, K. Volz, S. W. Koch
Journal of Materials Science: Materials in Electronics 23 (10) (2012), pp. 1799 - 1804
Determination of the chemical composition of GaNAs using STEM HAADF imaging and STEM strain state analysis
T. Grieb, K. Müller, R. Fritz, M. Schowalter, N. Neugebohrn, N. Knaub, K. Volz, A. Rosenauer
Ultramicroscopy 117 (2012), pp. 15 – 23
High Peak Power Operation of a 1- μ m GaAs-Based Optically Pumped Semiconductor Laser
A. Laurain, T.-L. Wang, M. J. Yarborough, J. Hader, J. V. Moloney, S. W. Koch, B. Kunert, W. Stolz
IEEE Photonics Technology Letters 24 (5) (2012), pp. 380 - 382
On the Measurement of the Thermal Resistance of Vertical-External-Cavity Surface-Emitting Lasers (VECSELs)
B. Heinen, F. Zhang, M. Sparenberg, B. Kunert, M. Koch, and W. Stolz
IEEE Journal of Quantum Electronics 48 (7) (2012), pp. 934 - 940
High room-temperature optical gain in Ga(NAsP)/Si heterostructures
N. Koukourakis, C. Bückers, D. A. Funke, N. C. Gerhardt, S. Liebich, S. Chatterjee, C. Lange, M. Zimprich, K. Volz, W. Stolz, B. Kunert, S. W. Koch, and M. R. Hofmann
Appl. Phys. Lett. 100 (9) (2012), 092107
GaP heteroepitaxy on Si(001): Correlation of Si-surface structure, GaP growth conditions, and Si-III/V interface structure
A. Beyer, J. Ohlmann, S. Liebich, H. Heim, G. Witte, W. Stolz, K. Volz
J. Appl. Phys. 111 (8) (2012), 083534
Parameters for temperature dependence of mean-square displacements for B-, Bi- and Tl-containing binary III-V compounds
M. Schowalter, A. Rosenauer and K. Volz
Acta Crystallographica A 68 (3) (2012), pp. 319 - 323
Thermal management in high-power vertical-external-cavity surface-emitting lasers
A. Chernikov, J. Herrmann, M. Scheller, M. Koch, B. Kunert, W. Stolz, S. Chatterjee, S. W. Koch, T.-L. Wang, Y. Kaneda, M. J. Yarborough, J. Hader, and J. V. Moloney
Quantum Electronics and Laser Science Conference, San Jose, California (2012)
2011
Modal gain and time-resolved photoluminescence of Ga (NAsP) heterostructures pseudomorphically grown on silicon (001) substrate
N. Koukourakis, D. A. Funke, N. C. Gerhardt, M. R. Hofmann, B. Kunert, S. Liebich, D. Trusheim, M. Zimprich, C. Bückers, S. W. Koch, K. Volz, W. Stolz
Conf. on Lasers and Electro-Optics (CLEO), Baltimore, USA (2011), pp. 1 - 2
Toward Simultaneous Assessment of In and N in InGaAsN Alloys by Quantitative STEM-ADF Imaging
V. Grillo, K. Müller, F. Glas, K. Volz and A. Rosenauer
Microscopy and Microanalysis 17 (Suppl. 2) (2011), pp. 1862 - 1863
Investigation of the GaP/Si Interface by High-Resolution Scanning Transmission Electron Microscopy
A. Beyer, J. Ohlmann, M. Luysberg and K. Volz
Microscopy and Microanalysis 17 (Suppl. 2) (2011), pp. 1390 - 1391
Double-scaled disorder in Ga(N,As,P)/GaP multiquantum wells
C. Karcher, K. Jandieri, B. Kunert, R. Fritz, K. Volz, W. Stolz, F. Gebhard, S. D. Baranovskii, W. Heimbrodt
Journal of Luminescence, in press, available online 12 October 2011
Carrier dynamics in (ZnMg)O alloy materials
A. Chernikov, S. Horst, M. Koch, K. Volz, S. Chatterjee, S. W. Koch, T. A. Wassner, B. Laumer, M. Eickhoff
physica status solidi (c) 8 (4) (2011), pp. 1149 – 1152
Application of transmission electron microscopy for microstructural characterization of perfluoropentacene thin films
B. Haas, A. Beyer, W. Witte, T. Breuer, G. Witte, and K. Volz
J. Appl. Phys. 110 (7) (2011), 073514
Heat Management in High-Power Vertical-External-Cavity Surface-Emitting Lasers
A. Chernikov, J. Herrmann, M. Koch, B. Kunert, W. Stolz, S. Chatterjee, S. W. Koch, T.-L. Wang, Y. Kaneda, J. M. Yarborough, J. Hader, J. V. Moloney
IEEE Journal of Selected Topics in Quantum Electronics 17 (6) (2011), pp. 1772 - 1778
VECSEL Optimization Using Microscopic Many-Body Physics
J. Hader, T.-L. Wang; J. M. Yarborough, C. A. Dineen, Y. Kaneda, J. V. Moloney, B. Kunert, W. Stolz, S. W. Koch
IEEE Journal of Selected Topics in Quantum Electronics 17 (6) (2011), pp. 1753 - 1762
Band structure properties of novel BxGa1−xP alloys for silicon integration
, , , , , , , and
J. Appl. Phys. 110 (6) (2011), 063101
Laser operation of Ga(NAsP) lattice-matched to (001) silicon substrate
S. Liebich, M. Zimprich, A. Beyer, C. Lange, D. J. Franzbach, S. Chatterjee, N. Hossain, S. J. Sweeney, K. Volz, B. Kunert, and W. Stolz
Appl. Phys. Lett. 99 (7) (2011), 071109
Reduced threshold current dilute nitride Ga(NAsP)/GaP quantum well lasers grown by MOVPE
N. Hossain, S. J. Sweeney, S. Rogowsky, R. Ostendorf, J. Wagner, S. Liebich, M. Zimprich, K. Volz, B. Kunert, W. Stolz
Electronics Letters 47 (16) (2011), pp. 931 - 933
Atomic scale annealing effects on InxGa1-xNyAs1-y studied by TEM three-beam imaging
K. Müller, M. Schowalter, A. Rosenauer, D. Hu, D. M. Schaadt, M. Hetterich, P. Gilet, O. Rubel, R. Fritz and K. Volz
Phys. Rev. B 84 (4) (2011), 045316
GaP-nucleation on exact Si (001) substrates for III/V device integration
K. Volz, A. Beyer, W. Witte, J. Ohlmann, I. Németh, B. Kunert, W. Stolz
Journal of Crystal Growth 315 (1) (2011), pp. 37 - 47
Correlation between hetero-interface properties and photoluminescence efficiency of Ga(NAsP)/(BGa)P multi-quantum well structures on (001) Si substrate
B. Kunert, S. Liebich, A. Beyer, R. Fritz, S. Zinnkann, K. Volz, W. Stolz
Journal of Crystal Growth 315 (1) (2011), pp. 28 - 31
Indirect in situ characterization of Si (100) substrates at the initial stage of III-V heteroepitaxy
H. Döscher, O. Supplie, S. Brückner, T. Hannappel, A. Beyer, J. Ohlmann, K. Volz
Journal of Crystal Growth 315 (1) (2011), pp. 16 - 21
Hopping relaxation of photo-excited excitons in Ga(NAsP) bulk structure
K. Jandieri, C. Jurecka, J. Ohlmann, A. Beyer, B. Kunert, S. D. Baranovskii, K. Volz, W. Stolz, F. Gebhard
physica status solidi (c) 8 (1) (2011), p. 163 - 168
Influence of crystal polarity on crystal defects in GaP grown on exact Si (001)
A. Beyer, I. Németh, S. Liebich, J. Ohlmann, W. Stolz, and K. Volz
J. Appl. Phys. 109 (8) (2011), 083529
Vibrational mode and dielectric function spectra of BGaP probed by Raman scattering and spectroscopic ellipsometry
S. Rogowsky, M. Bäumler, M. Wolfer, L. Kirste, R. Ostendorf, J. Wagner, S. Liebich, W. Stolz, K. Volz, and B. Kunert
J. Appl. Phys. 109 (5) (2011), 053504
High modal gain in Ga(NAsP)/(BGa)((As)P) heterostructures grown lattice matched on (001) silicon
N. Koukourakis, D. A. Funke, N. C. Gerhardt, M. R. Hofmann, S. Liebich, C. Bückers, S. Zinnkann, M. Zimprich, A. Beyer, S. Chatterjee, S. W. Koch, B. Kunert, K. Volz and W. Stolz
Proc. SPIE 7939, 793927 (2011)
Investigation of optical and concentration profile changes of InGaNAs/GaAs heterostructures induced by thermal annealing
R. Imlau, K. Müller, O. Rubel, R. Fritz, M. Schowalter, K. Volz and A. Rosenauer
Journal of Physics: Conf. Ser. 326 (1) (2011), 012038
TEM 3-beam study of annealing effects in InGaNAs using ab-initio structure factors for strain-relaxed supercells
K. Müller, M. Schowalter, O. Rubel, D. Z. Hu, D. M. Schaadt, M. Hetterich, P. Gilet, R. Fritz, K. Volz and A. Rosenauer
Journal of Physics: Conf. Ser. 326 (1) (2011), 012026
Strain, composition and disorder in ADF imaging of semiconductors
V. Grillo, K. Mueller, K. Volz, F. Glas, T. Grieb and A. Rosenauer
Journal of Physics: Conf. Ser. 326 (1) (2011), 012006
2010
Peculiarities of the photoluminescence of metastable Ga(N,As,P)/GaP quantum well structures
C. Karcher, K. Jandieri, B. Kunert, R. Fritz, M. Zimprich, K. Volz, W. Stolz, F. Gebhard, S. D. Baranovskii, and W. Heimbrodt
Phys. Rev. B 82 (24) (2010), 245309
Characterization of solar cells by photocurrent spectroscopy and current-voltage characteristics with high spatial resolution
M. Schwalm, C. Lange, W. W. Rühle, W. Stolz, K. Volz, and S. Chatterjee
Optics Express 18 (6) (2010), pp. 6277 - 6287
Highly polarized self-assembled chains of single layer InP/(In,Ga)P quantum dots
A. Ugur, F. Hatami, A. N. Vamivakas, L. Lombez, M. Atatüre, K. Volz, and W. T. Masselink
Appl. Phys. Lett. 97 (25) (2010), 253113
In situ antiphase domain quantification applied on heteroepitaxial GaP growth on Si (100)
H. Döscher, B. Kunert, A. Beyer, O. Supplie, K. Volz, W. Stolz, and T. Hannappel
J. Vac. Sci. Technol. B 28 (4) (2010), C5H1 - C5H6
Influence of spatial pump distribution on the performance of high power vertical-external-cavity surface-emitting lasers
A. Chernikov, J. Hermann, M. Scheller, M. Koch, B. Kunert, W. Stolz, S. Chatterjee, S. W. Koch, T. L. Wang, Y. Kaneda, J. M. Yarborough, J. Hader, and J. V. Moloney
Appl. Phys. Lett. 97 (19) (2010), 191110
Predictive Microscopic Modeling of VECSELs
J. Hader, G. Hardesty, T.-L. Wang, M. J. Yarborough, Y. Kaneda, J. V. Moloney, B. Kunert, W. Stolz, S. W. Koch
IEEE Journal of Quantum Electronics 46 (5) (2010), pp. 810 - 817
High-Power Optically Pumped Semiconductor Laser at 1040 nm
T.-L. Wang, Y. Kaneda, J. M. Yarborough, J. Hader, J. V. Moloney, A. Chernikov, S. Chatterjee, S. W. Koch, B. Kunert, W. Stolz
IEEE Photonics Technology Letters 22 (9) (2010), pp. 661 - 663
Comparison of ultrafast carrier thermalization in GaxIn1-xAs and Ge quantum wells
C. Lange, N. S. Köster, S. Chatterjee, H. Sigg, D. Chrastina, G. Isella, H. von Känel, B. Kunert, and W. Stolz
Phys. Rev. B 81 (4) (2010), 045320
MOVPE Growth of III-V Solar Cells on Silicon in 300 mm Closed Coupled Showerhead Reactor
T. Roesener, H. Döscher, A. Beyer, S. Brückner, V. Klinger, A. Wekkeli, P. Kleinschmidt, C. Jurecka, J. Ohlmann, K. Volz, W. Stolz, T. Hannappel, A. W. Bett, F. Dimroth
Proc. 25th European Conf. "Photovoltaic Solar Energy", Valencia (2010), pp. 964 - 968
Investigation of carrier dynamics in Zn1-xMgxO by time-resolved photoluminescence
A. Chernikov, S. Horst, M. Koch, K. Volz, S. Chatterjee, S. W. Koch, T. A. Wassner, B. Laumer and M. Eickhoff
Journal of Luminescence 130 (11) (2010), pp. 2256 - 2259
Effect of bonding and static atomic displacements on composition quantification in InxGa1-xNyAs1-y
K. Müller, M. Schowalter, A. Rosenauer, O. Rubel, K. Volz
Phys. Rev. B 81 (2010), 075315
2009
Optical properties of Ga(NAsP) lattice matched to Si
C. Karcher, H. Grüning, M. Güngerich, P. J. Klar, B. Kunert, K. Volz, W. Stolz, W. Heimbrodt
physica status solidi (c) 6 (12) (2009), pp. 2638 - 2643
Gain characteristics and lasing of GA(NAsP) multi-quantum well structures
C. Lange, S. Chatterjee, B. Kunert, K. Volz, W. Stolz, W. W. Rühle, N. C. Gerhardt, M. R. Hofmann
physica status solidi (c) 6 (2) (2009), pp. 576 - 578
Ga(AsSb)/GaAs/(AlGa)As heterostructures: additional hole-confinement due to quantum islands
S. Horst, S. Chatterjee, K. Hantke, P. J. Klar, I. Németh, W. Stolz, K. Volz, C. Bückers, A. Thränhardt, S. W. Koch, W. Rühle, S. R. Johnson, J.-B. Wang, Y.-H. Zhang
physica status solidi (c) 6 (2) (2009), pp. 411 - 414
Continuous-wave single-frequency 295 nm laser source by a frequency-quadrupled optically pumped semiconductor laser
Y. Kaneda, M. Fallahi, J. Hader, J. V. Moloney, S. W. Koch, B. Kunert, and W. Stolz
Optics Letters 34 (22) (2009), pp. 3511 - 3513
Fluctuations of the peak current of tunnel diodes in multi-junction solar cells
K. Jandieri, S. D. Baranovskii, W. Stolz, F. Gebhard, W. Guter, M. Hermle and A. W. Bett
J. Phys. D: Appl. Phys. 42 (15) (2009), 155101
MOVPE growth of dilute nitride III/V semiconductors using all liquid metalorganic precursors
K. Volz, J. Koch, F. Höhnsdorf, B. Kunert, W. Stolz
Journal of Crystal Growth 311 (8) (2009), pp. 2418 - 2426
Band anti-crossing and carrier recombination in dilute nitride phosphide based lasers and light emitting diodes
J. Chamings, S. Ahmed, A. R. Adams, S. J. Sweeney, V. A. Odnoblyudov, C. W. Tu, B. Kunert, W. Stolz
physica status solidi (b) 246 (3) (2009), pp. 527 - 531
2008
Analytical theory for favorable defects in tunnel diodes
K. Jandieri, S. D. Baranovskii, W. Stolz, and F. Gebhard
J. Appl. Phys. 104 (11) (2008), 114511
Resonant electron tunneling through defects in GaAs tunnel diodes
K. Jandieri, S. D. Baranovskii, O. Rubel, W. Stolz, F. Gebhard, W. Guter, M. Hermle, and A. W. Bett
J. Appl. Phys. 104 (9) (2008), 094506
5-W Yellow Laser by Intracavity Frequency Doubling of High-Power Vertical-External-Cavity Surface-Emitting Laser
M. Fallahi, L. Fan, Y. Kaneda, C. Hessenius, J. Hader, H. Li, J. V. Moloney, B. Kunert, W. Stolz, S. W. Koch, J. Murray, R. Bedford
IEEE Photonics Technology Letters 20 (20) (2008), pp. 1700 - 1702
Local structure of Mn in hydrogenated Ga1-xMnxAs
C. Bihler, G. Ciatto, H. Huebl, G. Martinez-Criado, P. J. Klar, K. Volz, W. Stolz, W. Schoch, W. Limmer, F. Filippone, A. Amore Bonapasta, and M. S. Brandt
Phys. Rev. B 78 (23) (2008), 235208
In situ verification of single-domain III-V on Si (100) growth via metal-organic vapor phase epitaxy
H. Döscher, T. Hannappel, B. Kunert, A. Beyer, K. Volz, and W. Stolz
Appl. Phys. Lett. 93 (17) (2008), 172110
Si (001) surface preparation for the antiphase domain free heteroepitaxial growth of GaP on Si substrate
B. Kunert, I. Németh, S. Reinhard, K. Volz, and W. Stolz
Thin Solid Films 517 (1) (2008), pp. 140 - 143
Influence of GaInP ordering on the electronic quality of concentrator solar cells
I. Garcia, I. Rey-Stolle, C. Algora, W. Stolz and K. Volz
Journal of Crystal Growth 310 (23) (2008), pp. 5209 - 5213
Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers
J. Chamings, A. R. Adams, S. J. Sweeney, B. Kunert, K. Volz, and W. Stolz
Appl. Phys. Lett. 93 (10) (2008), 101108
Modeling the compositional dependence of electron diffraction in dilute GaAs- and GaP-based compound semiconductors
O. Rubel, I. Németh, W. Stolz, and K. Volz
Phys. Rev. B 78 (7) (2008), 075207
Direct structural evidence of the change in N-III bonding in (GaIn)(NAs) before and after thermal annealing
K. Volz, T. Torunski, O. Rubel, and W. Stolz
J. Appl. Phys. 104 (5) (2008), 053504
Monolithic integration of Ga(NAsP)/(BGa)P multi-quantum well structures on (001) silicon substrate by MOVPE
B. Kunert, S. Zinnkann, K. Volz, and W. Stolz
Journal of Crystal Growth 310 (23) (2008), pp. 4776 - 4779
Ways to quantitatively detect antiphase disorder in GaP films grown on Si (001) by transmission electron microscopy
I. Németh, B. Kunert, W. Stolz, K. Volz
Journal of Crystal Growth 310 (23) (2008), pp. 4763 - 4767
Doping, Electrical Properties and Solar Cell Application of GaInNAs
K. Volz, W. Stolz, J. Teubert, P. J. Klar, W. Heimbrodt, F. Dimroth, C. Baur, und A. W. Bett
in "Dilute III-V Nitride Semiconductors and Material Systems: Physics and Technolgy", Ed. A. Erol
Springer Series in Materials Science 105 (2008), pp. 369 - 404
Properties and Laser Applications of the GaP-based (GaNAsP)-Material System for Integration to Si Substrates
B. Kunert, K. Volz, und W. Stolz
in "Dilute III-V Nitride Semiconductors and Material Systems: Physics and Technology", Ed. A. Erol
Springer Series in Materials Science 105 (2008), pp. 317 - 341
Optimization of annealing conditions of (GaIn)(NAs) for solar cell applications
K. Volz, D. Lackner, I. Németh, B. Kunert, W. Stolz, C. Baur, F. Dimroth, A. W. Bett
Journal of Crystal Growth 310 (7 - 9) (2008), pp. 2222 - 2228
Heteroepitaxy of GaP on Si: Correlation of morphology, anti-phase-domain structure and MOVPE growth conditions
I. Németh, B. Kunert, W. Stolz, K. Volz
Journal of Crystal Growth 310 (7 - 9) (2008), pp. 1595 - 1601
Resonant tunneling as a dominant transport mechanism in n-GaAs/p-GaAs tunnel diodes
K. Jandieri, S. D. Baranovskii, O. Rubel, W. Stolz, F. Gebhard, W. Guter, M. Hermle, and A. W. Bett
Appl. Phys. Lett. 92 (24) (2008), 243504
Hole confinement in quantum islands in Ga(AsSb)/GaAs/(AlGa)As heterostructures
S. Horst, S. Chatterjee, K. Hantke, P. J. Klar, I. Németh, W. Stolz, K. Volz, C. Bückers, A. Thränhardt, S. W. Koch, W. Rühle, S. R. Johnson, J.-B. Wang, Y.-H. Zhang
Appl. Phys. Lett. 92 (16) (2008), 161101
A GaAs metalorganic vapor phase epitaxy growth process to reduce Ge outdiffusion from the Ge substrate
B. Galiana, I. Rey-Stolle, C. Algora, K. Volz, and W. Stolz
Appl. Phys. Lett. 92 (15) (2008), 152102
Influence of chirp on the femtosecond excitation of a semiconductor microcavity laser
E. Kühn, A. Thränhardt, S. W. Koch, W. Stolz, S. Chatterjee, C. Lange, W. W. Rühle, W. Wohlleben, and M. Motzkus
Appl. Phys. Lett 92 (1) (2008), 011107
Annealing experiments of the GaP based dilute nitride Ga(NAsP)
B. Kunert, D. Trusheim, V. Voßebürger, K. Volz, W. Stolz
physica status solidi (a) 205 (1) (2008), pp. 114 - 119
Photoluminescence under magnetic field and hydrostatic pressure for probing the electronic properties of GaAsN
A. Polimeni, G. Pettinari, R. Trotta, F. Masia, M. Felici, M. Capizzi, A. Lindsay, E. P. O'Reilly, T. Niebling, W. Stolz, P. J. Klar, F. Martelli, S. Rubini
physica status solidi (a) 205 (1) (2008), pp. 107 - 113
Optical bistability and spatial resonator solitons based on exciton-polariton nonlinearity
Y. Larionova, W. Stolz, and C. O. Weiss
Optics Letters 33 (4) (2008), pp. 321 - 323
Zero-phonon lines of nitrogen-cluster states in GaNxAs1-x:H identified by time-resolved photoluminiscence
K. Hantke, S. Horst, S. Chatterjee, P. J. Klar, K. Volz, W. Stolz, W. W. Rühle, F. Masia, G. Pettinari, A. Polimeni and M. Capizzi
Journal of Materials Science 43 (12) (2008), pp. 4344 - 4347
Exact Solution for Hopping Dissociation of Germinate Electron-Hole Pairs in a Disordered Chain
O. Rubel, S. D. Baranovskii, W. Stolz, and F. Gebhard
Phys. Rev. Lett. 100 (19) (2008), 196602
Spectral and time dependences of the energy transfer of bound optical excitations in GaP(N)
T. Niebling, O. Rubel, W. Heimbrodt, W. Stolz, S. D. Baranovskii, P. J. Klar and J. F. Geisz
Journal of Physics: Condensed Matter 20 (1) (2008), 015217
Role of strain and properties of N clusters at the onset of the alloy limit in GaAs1−xNx
A. Polimeni, F. Masia, G. Pettinari, R. Trotta, M. Felici, M. Capizzi, A. Lindsay, E. P. O’Reilly, T. Niebling, W. Stolz and P. J. Klar
Phys. Rev. B 77 (15) (2008), 155213
Antiphase Boundries in GaAs/Ge and GaP/Si
I. Németh, B. Kunert, W. Stolz und K. Volz
in "Microscopy of Semiconducting Materials 2007" Eds. P. A. Midgley, A. G. Cullis, Springer
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2007
Excitons bound to nitrogen pairs in GaAs as seen by photoluminescence of high spectral and spatial resolution
D. Karaiskaj, A. Mascarenhas, J. F. Klem, K. Volz, W. Stolz, M. Adamcyk, T. Tiedje
Phys. Rev. B 76 (12) (2007), 125209
Highly strained InGAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm
L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. W. Koch, J. T. Murray, and R. Bedford
Appl. Phys. Lett. 91 (13) (2007), 131114
Kinetic effects in recombination of optical excitations in disordered quantum heterostructures: Theory and experiment
O. Rubel, S. D. Baranovskii, K. Hantke, B. Kunert, W. W. Rühle, P. Thomas, K. Volz, W. Stolz
Journal of Luminescence 127 (2) (2007), pp. 285 - 290
Volatile Imido-Hydrazido Compounds of the Refractory Metals Niobium, Tantalum, Molybdenum, and Tungsten
D. Gaess, K. Harms, M. Pokoj, W. Stolz, and J. Sundermeyer
Inorg. Chem. 46 (16) (2007), pp. 6688 - 6701
Low threshold 1260 nm (GaIn)(NAs) semiconductor disk laser
W. Diehl, P. Brick, B. Kunert, S. Reinhard, K. Volz, and W. Stolz
Appl. Phys. Lett. 91 (7) (2007), 071103
Spectral dependence of the photoluminescence decay in disordered semiconductors
O. Rubel, W. Stolz, and S. D. Baranovskii
Appl. Phys. Lett. 91 (2) (2007), 021903
Annealing effects on the nanoscale indium and nitrogen distribution in Ga(NAs) and (GaIn)(NAs) quantum wells
K. Volz, T. Torunski, O. Rubel, W. Stolz, P. Kruse, D. Gerthsen, M. Schowalter, and A. Rosenauer
J. Appl. Phys. 102 (8) (2007), 083504
Microstructural analysis of Ga(NAs)/GaP heterostructures
I. Németh, T. Torunski, B. Kunert, W. Stolz, and K. Volz
J. Appl. Phys. 101 (12) (2007), 123524
Dynamic behavior of 1040 nm semiconductor disk lasers on a nanosecond time scale
W. Diehl, P. Brick, S. Chatterjee, S. Horst, K. Hantke, W. W. Rühle, W. Stolz, A. Thränhardt, and S. W. Koch
Appl. Phys. Lett. 90 (24) (2007), 241102
Material Development for Improved 1 eV (GaIn)(NAs) Solar Cell Structures
K. Volz, T. Torunski, D. Lackner, O. Rubel, W. Stolz, C. Baur, S. Müller, F. Dimroth, and A. W. Bett
Journal of Solar Energy Engineering - Transactions of the ASME 129 (3) (2007), pp. 266 - 271
Extended Tunability in a Two-Chip VECSEL
L. Fan, M. Fallahi, A. R. Zakharian, J. Hader, J. V. Moloney, R. Bedford, J. T. Murray, W. Stolz, S. W. Koch
IEEE Photonics Technology Letters 19 (8) (2007), pp. 544 - 546
Dilute nitride Ga(NAsP)/GaP-heterostructures: toward a material development for novel optoelectronic functionality on Si-substrate
B. Kunert, K. Volz, W. Stolz
physica status solidi (b) 244 (8) (2007), pp. 2730 - 2739
Silicon carbide and boron carbide thin films formed by plasma immersion ion implantation of hydrocarbon gases
W. Ensinger, G. Kraft, F. Sittner, K. Volz, K. Baba and R. Hatada
Surface and Coatings Technology 201 (19 - 20) (2007), pp. 8366 - 8369
Diamond-like carbon films formed by hydrocarbon plasma immersion ion implantation with methane/toluene mixtures
W. Ensinger, K. Volz, K. Baba, R. Hatada
Nucl. Instr. Meth. Phys. Res. B 257 (2007), pp. 692 - 695
Influence of annealing on the optical and structural properties of dilute N-containing III/V semiconductor heterostructures
K. Volz, J. Koch, B. Kunert, I. Németh, W. Stolz
Journal of Crystal Growth 298 (2007), pp. 126 - 130
MOVPE growth conditions of the novel direct band gap, diluted nitride Ga(NasP) material system pseudomorphically strained on GaP-substrate
B. Kunert, K. Volz, J. Koch, W. Stolz
Journal of Crystal Growth 298 (2007), pp. 121 - 125
Morphology of interior interfaces in the novel dilute nitride Ga(NAsP)/GaP material system
S. Oberhoff, B. Kunert, T. Torunski, K. Volz, W. Stolz
Journal of Crystal Growth 298 (2007), pp. 98 - 102
Hydrostatic pressure experiments on dilute nitride alloys
P. J. Klar, J. Teubert, M. Güngerich, T. Niebling, H. Grüning, W. Heimbrodt, K. Volz, W. Stolz, A. Polimeni, M. Capizzi, E. P. O'Reilly, A. Lindsay, M. Galluppi, L. Geelhaar, H. Riechert, S. Tomić
physica status solidi (b) 244 (1) (2007), pp. 24 - 31
Electron Mass in Dilute Nitrides and its Anomalous Dependence on Hydrostatic Pressure
G. Pettinari, A. Polimeni, F. Masia, R. Trotta, M. Felici, M. Capizzi, T. Niebling, W. Stolz, and P. J. Klar
Phys. Rev. Lett. 98 (2007), 146402
2006
Multichip vertical-external-cavity surface-emitting lasers: a coherent power scaling scheme
L. Fan, M. Fallahi, J. Hader, A. R. Zakharian, J. V. Moloney, J. T. Murray, R. Bedford, W. Stolz, and S. W. Koch
Optics Letters 31 (24) (2006), pp. 3612 - 3614
Influence of nitrogen-cluster states on the gyromagnetic factor of electrons in GaAs1-xNx
G. Pettinari, F. Masia, A. Polimeni, M. Felici, A. Frova, M. Capizzi, A. Lindsay, E. P. O'Reilly, P. J. Klar, W. Stolz, G. Bais, M. Piccin, S. Rubini, F. Martelli, and A. Franciosi
Phys. Rev. B 74 (24) (2006), 245202
Model of annealing-induced short-range order effects in (GaIn)(NP) alloys
O. Rubel, B. Kunert, S. D. Baranovskii, F. Grosse, K. Volz, and W. Stolz
Phys. Rev. B 74 (19) (2006), 195206
Compositional disorder in GaAs1-xNx:H investigated by photoluminescence
M. Felici, R. Trotta, F. Masia, A. Polimeni, A. Miriametro, M. Capizzi, P. J. Klar, and W. Stolz
Phys. Rev. B 74 (8) (2006), 085203
Optimizing the performance of a vertical-cavity surface-emitting laser
S. Chatterjee, W. Wohlleben, C. Lange, W. Stolz, M. Motzkus, and W. W. Rühle
Appl. Phys. Lett. 89 (15) (2006), 151122
High brightness spectral beam combination of high-power vertical-external-cavity surface-emitting lasers
Y. Kaneda, L. Fan, T.-C. Hsu, N. Peyghambarian, M. Fallahi, A. R. Zakharian, J. Hader, J. V. Moloney, W. Stolz, S. Koch, R. Bedford, A. Sevian, L. Glebov
IEEE Photonics Technology Letters 18 (17) (2006), pp. 1795 -1797
Tuning the magnetic properties of GaAs:Mn/MnAs hybrids via the MnAs cluster shape
H.-A. Krug von Nidda, T. Kurz, A. Loidl, Th. Hartmann, P. J. Klar, W. Heimbrodt, M. Lampalzer, K. Volz and W. Stolz
Journal of Physics: Condensed Matter 18 (26) (2006), pp. 6071 - 6083
Excitation transfer between extended band states and N-related localized states in GaP1-xNx with x up to 1%
T. Niebling, T. Lapp, J. Kampmann, P. J. Klar, W. Heimbrodt, B. Kunert, K. Volz, W. Stolz
Physica E 32 (1 - 2) (2006), pp. 222 - 225
Competition of N-passivation and Te-passivation in hydrogenation of Te-doped (Ga,In)(N,As)
J. Teubert, P. J. Klar, W. Heimbrodt, K. Volz, W. Stolz, A. Polimeni, M. Capizzi
Physica E 32 (1 - 2) (2006), pp. 218 - 221
Lasing in optically pumped Ga(NAsP)/GaP heterostructures
S. Borck, S. Chatterjee, B. Kunert, K. Volz, W. Stolz, J. Heber, W. W. Rühle, N. C. Gerhardt, and M. R. Hofmann
Appl. Phys. Lett. 89 (3) (2006), 031102
Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by intracavity frequency doubling
L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz
Appl. Phys. Lett. 88 (25) (2006), 251117
Luminescence investigations of the GaP-based dilute nitride Ga(NAsP) material system
B. Kunert, K. Volz, I. Németh, W. Stolz
Journal of Luminescence 121 (2) (2006), pp. 361 - 364
Model of temperature quenching of photoluminescence in disordered semiconductors and comparison to experiment
O. Rubel, S. D. Baranovskii, K. Hantke, B. Kunert, W. W. Rühle, P. Thomas, K. Volz, and W. Stolz
Phys. Rev. B 73 (23) (2006), 233201
Non-radiative recombination of optical excitations in (GaIn)(NAs) quantum wells
O. Rubel, S. D. Baranovskii, K. Hantke, W. W. Rühle, P. Thomas, K. Volz, W. Stolz
physica status solidi (c) 3 (7) (2006), pp. 2481 - 2484
Near room temperature electrical injection lasing for dilute nitride Ga(NAsP)/GaP quantum-well structures grown by metal organic vapour phase epitaxy
B. Kunert, A. Klehr, S. Reinhard, K. Volz, W. Stolz
Electronics Letters 42 (10) (2006), pp. 601 - 603
Direct-band-gap Ga(NAsP)-material system pseudomorphically grown on GaP substrate
B. Kunert, K. Volz, J. Koch, and W. Stolz
Appl. Phys. Lett. 88 (18) (2006), 182108
Nanoanalytical quantification of the nitrogen content in Ga(NAs)/GaAs by using transmission electron microscopy in combination with refined structure factor calculation
K. Volz, O. Rubel, T. Torunski, S. D. Baranovskii, and W. Stolz
Appl. Phys. Lett. 88 (8) (2006), 081910
Tunable high-power high-brightness linearly polarized vertical-external-cavity surface-emitting lasers
L. Fan, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, A. R. Zakharian, J. Hader, J. V. Moloney, W. Stolz, and S. W. Koch
Appl. Phys. Lett. 88 (2) (2006), 021105
Interaction between conduction band edge and nitrogen states probed by carrier effective-mass measurements in GaAs1-xNx
F. Masia, G. Pettinari, A. Polimeni, M. Felici, A. Miriametro, M. Capizzi, A. Lindsay, S. B. Healy, E. P. O'Reilly, A. Cristofoli, G. Bais, M. Piccin, S. Rubini, F. Martelli, A. Franciosi, P. J. Klar, K. Volz, and W. Stolz
Phys. Rev. B 73 (7) (2006), 073201
Optical activity of a single MnAs Cluster: Birefringence or Kerr effect
M. Leuschner, P. J. Klar, W. Heimbrodt, W. W. Rühle, S. Hara, W. Stolz, K. Volz, T. Kurz, A. Loidl, H.-A. Krug von Nidda
Journal of Magnetism and Magnetic Materials 301 (2) (2006), pp. 478 - 488
Correlation of band formation and local vibrational mode structure of Ga0.95Al0.05As1-xNx with 0 ≤ x ≤ 0.03
M. Güngerich, P. J. Klar, W. Heimbrodt, K. Volz, K. Köhler, J. Wagner, A. Polimeni, M. Capizzi, H. Ch. Alt, and Y. V. Gomeniuk
physica status solidi (c) 3 (3) (2006), pp. 619 - 622
First demonstration of electrical injection lasing in the novel dilute nitride Ga(NAsP)/GaP-material system
B. Kunert, S. Reinhard, J. Koch, M. Lampalzer, K. Volz, W. Stolz
physica status solidi (c) 3 (3) (2006), pp. 614 - 618
2005
Carrier relaxation dynamics in annealed and hydrogenated (GaIn)(NAs)/GaAs quantum wells
K. Hantke, J. D. Heber, S. Chatterjee, P. J. Klar, K. Volz, W. Stolz, W. W. Rühle, A. Polimeni, and M. Capizzi
Appl. Phys. Lett. 87 (25) (2005), 252111
Room-temperature threshold reduction in vertical-cavity surface-emitting lasers by injection of spin-polarized electrons
J. Rudolph, S. Döhrmann, D. Hägele, M. Oestreich, and W. Stolz
Appl. Phys. Lett. 87 (24) (2005), 241117
Bound-to-bound and bound-to-free transitions in surface photovoltage spectra: determination of the band offsets for InxGa1-xAs and InxGa1-xAs1-yNy quantum wells
M. Galluppi, L. Geelhaar, H. Riechert, M. Hetterich, A. Grau, S. Birner, and W. Stolz
Phys. Rev. B 72 (15) (2005), 155324
Quantitative description of disorder parameters in (GaIn)(NAs) quantum wells from the temperature-dependent photoluminescence spectroscopy
O. Rubel, M. Galluppi, S. D. Baranovskii, K. Volz, L. Geelhaar, H. Riechert, P. Thomas, and W. Stolz
J. Appl. Phys. 98 (6) (2005), 063518
Spin-dependent localization effects in GaAs:Mn/MnAs granular paramagnetic-ferromagnetic hybrids at low temperatures
C. Michel, C. H. Thien, S. Ye, P. J. Klar, W. Heimbrodt, S. D. Baranovskii, P. Thomas, M. Lampalzer, K. Volz, W. Stolz, B. Goldlücke
Superlattices and Microstructures 37 (5) (2005), pp. 321 - 326
Over 3 W high-efficiency vertical-external-cavity surface-emitting lasers and application as efficient fiber laser pump sources
L. Fan, M. Fallahi, J. Hader, A. R. Zakharian, M. Kolesik, J. V. Moloney, T. Qiu, A. Schülzgen, N. Peyghambarian, W. Stolz, S. W. Koch, and J. T. Murray
Appl. Phys. Lett. 86 (21) (2005), 211116
FULLSPECTRUM: a new PV wave making more efficient use of the solar spectrum
A. Luque, A. Martí, A. Bett, V. M. Andreev, C. Jaussaud, J. A. M. van Roosmalen, J. Alonso, A. Räuber, G. Strobl, W. Stolz, C. Algora, B. Bitnar, A. Gombert, C. Stanley, P. Wahnon, J. C. Conesa, W. G. J. H. M. van Sark, A. Meijerink, G. P. M. van Klink, K. Barnham, R. Danz, T. Meyer, I. Luque-Heredia, R. Kenny, C. Christofides, G. Sala, P. Benítez
Solar Energy Materials and Solar Cells 87 (1 - 4) (2005), pp. 467 - 479
Time-resolved photoluminescence of type-I and type-II (GaIn)As/Ga(NAs) heterostructures
K. Hantke, J. D. Heber, C. Schlichenmaier, A. Thränhardt, T. Meier, B. Kunert, K. Volz, W. Stolz, S. W. Koch, and W. W. Rühle
Phys. Rev. B 71 (16) (2005), 165320
Vibrational properties of GaAs0.915N0.085 under hydrostatic pressures up to 20 GPa
M. Güngerich, P. J. Klar, W. Heimbrodt, J. Koch, W. Stolz, M. P. Halsall, and P. Harmer
Phys. Rev. B 71 (7) (2005), 075201
High-power optically pumped VECSEL using a double-well resonant periodic gain structure
L. Fan, J. Hader, M. Schillgalies, M. Fallahi, A. R. Zakharian, J. V. Moloney, R. Bedford, J. T. Murray, S. W. Koch, W. Stolz
IEEE Photonics Technology Letters 17 (9) (2005), pp. 1764 - 1766
Type I-type II transition in InGaAs-GaNAs heterostructures
C. Schlichenmaier, H. Grüning, A. Thränhardt, P. J. Klar, B. Kunert, K. Volz, W. Stolz, W. Heimbrodt, T. Meier, S. W. Koch, J. Hader, and J. V. Moloney
Appl. Phys. Lett. 86 (8) (2005), 081903
On the theoretical description of photoluminescence in disordered quantum structures
O. Rubel, S. D. Baranovskii, K. Hantke, J. D. Heber, J. Koch, P. Thomas, J. M. Marshalla, W. Stolz, W. W. Rühle
Journal of Optoelectronics and Advanced Materials 7 (1) (2005), pp. 115 - 120
Detection of nanometer-sized strain fields in (GaIn)(NAs) alloys by specific dark field transmission electron microscopic imaging
K. Volz, T. Torunski, and W. Stolz
J. Appl. Phys. 97 (1) (2005), 014306
Magnetic Interactions in Granular Paramagnetic–Ferromagnetic GaAs: Mn/MnAs Hybrids
W. Heimbrodt, P. J. Klar, S. Ye, M. Lampalzer, C. Michel, S. D. Baranovskii, P. Thomas und W. Stolz
Journal of Superconductivity 18 (3) (2005), pp. 315 - 320
2004
Tuning of the average p-d exchange in (Ga,Mn)As by modification of the Mn electronic structure
Th. Hartmann, S. Ye, P. J. Klar, W. Heimbrodt, M. Lampalzer, W. Stolz, T. Kurz, A. Loidl, H.-A. Krug von Nidda, D. Wolverson, J. J. Davies, H. Overhof
Phys. Rev. B 70 (23) (2004), 233201
Influence of N on the electron transport in (Ga,In)(N,As) probed by magnetotransport under hydrostatic pressure
J. Teubert, P. J. Klar, W. Heimbrodt, K. Volz, W. Stolz
IEE Proceedings - Optoelectronics 151 (5) (2004), pp. 357 - 360
Te-co-doping experiments in ferromagnetic Mn(Ga)As/GaAs-cluster hybrid layers by MOVPE
M. Lampalzer, S. Nau, C. Pietzonka, W. Treutmann, K. Volz, W. Stolz
Journal of Crystal Growth 272 (1 - 4) (2004), pp. 772 - 777
MOVPE growth experiments of the novel (GaIn)(NP)/GaP material system
B. Kunert, J. Koch, T. Torunski, K. Volz, W. Stolz
Journal of Crystal Growth 272 (1 - 4) (2004), pp. 753 - 759
Specific structural and compositional properties of (GaIn)(NAs) and their influence of optoelectronic device performance
K. Volz, T. Torunski, B. Kunert, O. Rubel, S. Nau, S. Reinhard, W. Stolz
Journal of Crystal Growth 272 (1 - 4) (2004), pp. 739 - 747
Comparison of dilute nitride growth on a single- and 8x4-inch multiwafer MOVPE system for solar cell applications
F. Dimroth, C. Baur, A. W. Bett, K. Volz, W. Stolz
Journal of Crystal Growth 272 (1 - 4) (2004), pp. 726 - 731
MOVPE growth of (AlGaIn)P/(GaIn)P heterostructures using TBP
N. El-Zein, A. Greiling, J. Koch, W. Stolz, S. Reinhard, B. T. McDermott
Journal of Crystal Growth 272 (1 - 4) (2004), pp. 609 - 614
Columnar [001]-oriented nitrogen order in Ga(NAs) and (GaIn)(NAs) alloys
O. Rubel, K. Volz, T. Torunski, S. D. Baranovskii, F. Grosse, and W. Stolz
Appl. Phys. Lett. 85 (24) (2004), 5908 - 5910; erratum Appl. Phys. Lett. 87 (4) Errata (2005), 049903
Tunable variation of the electron effective mass and exciton radius in hydrogenated GaAs1-xNx
A. Polimeni, G. Baldassarri Höger von Högersthal, F. Masia, A. Frova, M. Capizzi, S. Sanna, V. Fiorentini, P. J. Klar, and W. Stolz
Phys. Rev. B 69 (4) (2004), 041201 (R)
Enhanced weak Anderson localization phenomena in the magnetoresistance of n-type (Ga,In)(N,As)
J. Teubert, P. J. Klar, W. Heimbrodt, K. Volz, W. Stolz, P. Thomas, G. Leibiger, and V. Gottschalch
Appl. Phys. Lett. 84 (5) (2004), pp. 747 - 749
Tuning of the electron effective mass and exciton wavefunction size in GaAs1-xNx
A. Polimeni, F. Masia, G. Baldassarri Höger von Högersthal, A. Frova, M. Capizzi, S. Sanna, V. Fiorentini, P. J. Klar, W. Stolz
Physica E 21 (2 - 4) (2004), pp. 747 - 751
Evidence for a type I to type II transition in (Ga,In)(N,As)/Ga(N,As) quantum well structures
H. Grüning, P. J. Klar, W. Heimbrodt, S. Nau, B. Kunert, K. Volz, W. Stolz, G. Weiser
Physica E 21 (2 - 4) (2004), pp. 666 - 670
Cluster formation and magnetic properties of Mn-incorporated (GaIn)As/InP layers grown by metal-organic vapor phase epitaxy
S. Hara, M. Lampalzer, T. Torunski, K. Volz, W. Treutmann and W. Stolz
Journal of Crystal Growth 261 (2 - 3) (2004), pp. 330 - 335
Hopping relaxation of excitons in GaInNAs/GaNAs quantum wells
H. Grüning, K. Kohary, S. D. Baranovskii, O. Rubel, P. J. Klar, A. Ramakrishnan, G. Ebbinghaus, P. Thomas, W. Heimbrodt, W. Stolz, W. W. Rühle
physica status solidi (c) 1 (1) (2004), pp. 109 - 112
Correlation of the structural and electronic properties of (Ga,In)(N,As) based heterostructures
P. J. Klar and K. Volz
Journal of Physics: Condensed Matter 16 (31) (2004), S 3053
2003
Anisotropy of the magnetotransport in (Ga,Mn)As/MnAs paramagnetic-ferromagnetic hybrid structures
S. Ye, P. J. Klar, Th. Hartmann, W. Heimbrodt, M. Lampalzer, S. Nau, T. Torunski, W. Stolz, T. Kurz, H.-A. Krug von Nidda, and A. Loidl
Appl. Phys. Lett. 83 (19) (2003), pp. 3927 - 3929
Monitoring the non-parabolicity of the conduction band in GaN0.018As0.982/GaAs quantum wells
P. J. Klar, H. Grüning, W. Heimbrodt, J. Koch, W. Stolz, S. Tomić, E. P. O'Reilly
Solid-State Electronics 47 (3) (2003), pp. 437 - 441
Hydrogen-related effects in dilute nitrides
A. Polimeni, F. Masia, M. Felici, G. Baldassarri Höger von Högersthal, M. Bissiri, A. Frova, M. Capizzi, P. J. Klar, W. Stolz, I. A. Buyanova, W. M. Chen, H. P. Xin, C. W. Tu
Physica B: Condensed Matter 340 - 342 (2003), pp. 371 - 376
Magneto-Optical Spectroscopy on (Ga,Mn)As-Based Layers - Correlation Between the p-d-Exchange Integral and Doping
T. Hartmann, S. Ye, T. Henning, P. J. Klar, M. Lampalzer, W. Stolz und W. Heimbrodt
Journal of Superconductivity 16 (2) (2003), pp. 423 - 426
Signatures of biexcitons and triexcitons in coherent non-degenerate semiconductor optics
T. Meier, C. Sieh, E. Finger, W. Stolz, W. W. Rühle, P. Thomas, S. W. Koch, A. D. Wieck
physica status solidi (b) 238 (3) (2003), pp. 537 - 540
Autocorrelation spectroscopy on single GaInAs/GaAs quantum wells
U. Neuberth, G. von Freymann, M. Wegener, S. Nau, W. Stolz
physica status solidi (b) 238 (3) (2003), pp. 498 - 501
Development of a 1.0 eV (GaIn)(NAs) solar cell
C. Baur, A. W. Bett, F. Dimroth, S. van Riesen, B. Kunert, M. Traversa, K. Volz, W. Stolz
Proc. of 3rd World Conf. "Photovoltaic Energy Conversion", Osaka, Japan 1 (2003), pp. 677 - 680
Correlation between lasing properties and band alignment of edge emitting lasers with (Ga,In)(N,As)/Ga(N,As) active regions
H. Grüning, P. J. Klar, W. Heimbrodt, G. Weiser, J. Koch, S. Nau, W. Stolz, R. Fehse, A. R. Adams, A. Ramakrishnan, G. Ebbinghaus
physica status solidi (b) 235 (2) (2003), pp. 417 - 422
Influence of Codoping on the Magnetoresistance of Paramagnetic (Ga,Mn)As
S. Ye, P. J. Klar, T. Henning, M. Lampalzer, W. Stolz, W. Heimbrodt
Journal of Superconductivity 16 (1) (2003), pp. 159 - 162
Early manifestation of localization effects in diluted Ga(AsN)
F. Masia, A. Polimeni, G. Baldassarri Höger von Högersthal, M. Bissiri, M. Capizzi, P. J. Klar, and W. Stolz
Appl. Phys. Lett. 82 (25) (2003), pp. 4474 - 4476
Correlation of the physical properties and the interface morphology of AlGaAs/GaAs heterostructures
L. Gottwaldt, K. Pierz, F. J. Ahlers, E. O. Göbel, S. Nau, T. Torunski, and W. Stolz
J. Appl. Phys. 94 (4) (2003), pp. 2464 - 2472
Unusual properties of metastable (Ga,In)(N,As) containing semiconductor structures
P. J. Klar, H. Grüning, L. Chen, T. Hartmann, D. Golde, M. Güngerich, W. Heimbrodt, J. Koch, K. Volz, B. Kunert, T. Torunski, W. Stolz, A. Polimeni, M. Capizzi, G. Dumitras, L. Geelhaar, H. Riechert
IEE Proceedings - Optoelectronics 150 (1) (2003), pp. 28 - 35
Global changes of the band structure and the crystal lattice of Ga(N,As) due to hydrogenation
P. J. Klar, H. Grüning, M. Güngerich, W. Heimbrodt, J. Koch, T. Torunski, W. Stolz, A. Polimeni, and M. Capizzi
Phys. Rev. B 67 (12) (2003), 121206 (R)
Mesoscopic island structure at GaAs/(AlGa)As interfaces grown by MBE
L. Gottwaldt, K. Pierz, F. J. Ahlers, E. O. Göbel, S. Nau, T. Torunski, W. Stolz
Journal of Crystal Growth 251 (1 - 4) (2003), pp. 85 - 89
The influence of the quantum lifetime on the width of the quantum Hall plateaus
L. Gottwaldt, K. Pierz, F. J. Ahlers, L. Schweitzer, E. O. Göbel, W. Stolz
Inst. Phys. Conf. Ser. 174 (2003), pp. 105 - 108
Overgrowth experiments of ferromagnetic (MnGa)As-cluster layers by MOVPE
M. Lampalzer, K. Volz, W. Treutmann, S. Nau, T. Torunski, K. Megges, J. Lorberth, W. Stolz
Journal of Crystal Growth 248 (2003), pp. 474 - 478
Nitrogen incorporation in (GaIn)(NAs) for 1.3 µm VCSEL grown with MOVPE
A. Ramakrishnan, G. Steinle, D. Supper, W. Stolz, G. Ebbinghaus
Journal of Crystal Growth 248 (2003), pp. 457 - 462
Doping behaviour of Si, Te, Zn and Mg in lattice-matched (GaIn)(NAs)/GaAs bulk films
K. Volz, J. Koch, B. Kunert and W. Stolz
Journal of Crystal Growth 248 (2003), pp. 451 - 456
Argon versus nitrogen ion beam assisted deposition of amorphous carbon and carbon-nitrogen films on aluminium for protection against aqueous corrosion
W. Ensinger, O. Lensch, F. Sittner, J. Knecht, K. Volz, T. Matsutani and M. Kiuchi
Nucl. Instr. Meth. Phys. Res. B 206 (2003), pp. 334 - 338
The role of Sb in the MBE growth of (GaIn)(NAsSb)
K. Volz, V. Gambin, W. Ha, M. A. Wistey, H. Yuen, S. Bank and J. S. Harris
Journal of Crystal Growth 251 (1 - 4) (2003), pp. 360 - 366
2002
Coulomb Correlations and Biexciton Signatures in Coherent Excitation Spectroscopy of Semiconductor Quantum Wells
E. Finger, S. Kraft, M. Hofmann, T. Meier, S. W. Koch, W. Stolz, W. W. Rühle, A. Wieck
physica status solidi (b) 234 (1) (2002), pp. 424 - 434
N-Composition and Pressure Dependence of the Inter Band Transitions of Ga(N,As)/GaAs Quantum Wells
H. Grüning, P. J. Klar, W. Heimbrodt, J. Koch, W. Stolz, A. Lindsay, S. Tomić, E. P. O'Reilly
High Pressure Research 22 (2) (2002), pp. 293 - 297
Ferromagnetic resonance studies of (Ga,Mn)As with MnAs clusters
Th. Hartmann, M. Lampalzer, P. J. Klar, W. Stolz, W. Heimbrodt, H.-A. Krug von Nidda, A. Loidl, L. Svistov
Physica E 13 (2 - 4) (2002), pp. 572 - 576
Interband transitions of quantum wells and device structures containing Ga(N,As) and (Ga,In)(N,As)
P. J. Klar, H. Grüning, W. Heimbrodt, G. Weiser, J. Koch, K. Volz, W. Stolz, S. W. Koch, S. Tomić, S. A. Choulis, T. J. C. Hosea, E. P. O'Reilly, M. Hofmann, J. Hader and J. V. Moloney
Semiconductor Science and Technology 17 (8) (2002), pp. 830 - 842
Spin injection, spin transport and spin coherence
M. Oestreich, M. Bender, J. Hübner, D. Hägele, W. W. Rühle, Th. Hartmann, P. J. Klar, W. Heimbrodt, M. Lampalzer, K. Volz and W. Stolz
Semiconductor Science and Technology 17 (4) (2002), 285 - 297
Emission dynamics and optical gain of 1.3-µm (GaIn)(NAs)/GaAs lasers
M. R. Hofmann, N. Gerhardt, A. M. Wagner, C. Ellmers, F. Höhnsdorf, J. Koch, W. Stolz, S. W. Koch, W. W. Rühle, J. Hader, J. V. Moloney, E. P. O'Reilly, B. Borchert, A. Y. Egorov, H. Riechert, H. C. Schneider, W. W. Chow
IEEE Journal of Quantum Electronics 38 (2) (2002), pp. 213 - 221
MOVPE-growth and characterization of metastable (GaIn)(NAs)/GaAs heterostructures for 1.3 µm lasers
A. Ramakrishnan, G. Ebbinghaus, W. Stolz
Inst. Phys. Conf. Ser. 170 (2002), pp. 825 - 830
MOVPE growth experiments and magnetic characterization of (GaMn)As layer structures
M. Lampalzer, K. Volz, W. Treutmann, S. Nau, T. Torunski, K. Megges, J. Lorberth and W. Stolz
Inst. Phys. Conf. Ser. 170 (2002), pp. 249 - 254
Surface-emitting second-harmonic generation in AlGaAs/GaAs waveguides
C. Degen, G. Jennemann, I. Fischer, W. Elsäßer, S. Leu, R. Rettig und W. Stolz
Optical and Quantum Electronics 34 (7) (2002), pp. 707 - 716
Semiconductor resonator solitons above bandgap
V. B. Taranenko, C. O. Weiss, and W. Stolz
J. Opt. Soc. Am. B 19 (4) (2002), pp. 684 - 688
Pitting corrosion of aluminium coated by ion beam assisted deposition of carbon with argon ions at different ion-to-atom arrival ratios
W. Ensinger, O. Lensch, J. Knecht, K. Volz, T. Matsutani and M. Kiuchi
Surface and Coatings Technology 158 - 159 (2002), pp. 594 - 598
Growth of the carbide, nitride and oxide of silicon by plasma immersion ion implantation
K. Volz and W. Ensinger
Surface and Coatings Technology 156 (1 - 3) (2002), p. 237 - 243
The multi-aperture hollow target: a method for determining ion incidence angles in plasma immersion ion implantation
W. Ensinger, K. Volz, M. Galonska, Ch. Gabor and H. Klein
Surface and Coatings Technology 156 (1 - 3) (2002), p. 92 - 96
2001
Influence of varying N-environments on the properties of (GaIn)(NAs) vertical-cavity surface-emitting lasers
S. A. Choulis, T. J. C. Hosea, P. J. Klar, M. Hofmann, and W. Stolz
Appl. Phys. Lett. 79 (26) (2001), pp. 4277 - 4279
Structure and composition of (GaMn)As formed by MOVPE
K. Volz, M. Lampalzer, A. Schaper, J. Zweck, W. Stolz
Inst. Phys. Conf. Ser. 169 (2001), pp. 211 - 214
Spintronics: Spin Electronics and Optoelectronics in Semiconductors
M. Oestreich, J. Hübner, D. Hägele, M. Bender, N. Gerhardt, M. Hofmann, W. W. Rühle, H. Kalt, Th. Hartmann, P. Klar, W. Heimbrodt, and W. Stolz
Adv. in Solid State Physics 41 (2001), pp. 173 - 186
Correlation of optical and transport properties of (AlGa)As/GaAs heterostructures
L. Gottwaldt, F. J. Ahlers, E. O. Göbel, G. Hein, S. Nau, K. Pierz, and W. Stolz
Proc. 25th Int. Conf. "Physics of Semiconductors", Springer Proc. in Physics 87 (2001), pp. 751 - 752
Novel investigation technique for interior III/V-semiconductor interfaces
S. Nau, G. Bernatz, and W. Stolz
Proc. 25th Int. Conf. "Physics of Semiconductors", Springer Proc. in Physics 87 (2001), pp. 435 - 436
Deviations from diffusive transport in 100 nm - 100 fs spatio-temporal pump-probe experiments on GaAs
J. Hetzler, A. Brunner, M. Wegener, S. Leu, S. Nau, and W. Stolz
Proc. 25th Int. Conf. "Physics of Semiconductors", Springer Proc. in Physics 87 (2001), pp. 190 - 191
(Ga,In)(N,As)-fine structure of the band gap due to nearest-neighbor configurations of the isovalent nitrogen
P. J. Klar, H. Grüning, J. Koch, S. Schäfer, K. Volz, W. Stolz, W. Heimbrodt, A. M. Kamal Saadi, A. Lindsay, and E. P. O'Reilly
Phys. Rev. B 64 (12) (2001), 121203 (R)
Pressure and Temperature Dependent Studies of GaNxAs1-x/GaAs Quantum Well Structures
P. J. Klar, H. Grüning, W. Heimbrodt, J. Koch, W. Stolz, P. M. A. Vicente, A. M. Kamal Saadi, A. Lindsay, E. P. O'Reilly
physica status solidi (b) 223 (1) (2001), pp. 163 - 169
Effects of Confinement on the Coupling between Nitrogen and Band States in InGaAs1-xNx/GaAs (x ≤ 0.025) Structures: Pressure and Temperature Studies
S. A. Choulis, B. A. Weinstein, T. J. C. Hosea, M. Kamal-Saadi, E. P. O'Reilly, A. R. Adams, W. Stolz
physica status solidi (b) 223 (1) (2001), pp. 151 - 156
Monitoring the sign reversal of the valence band exchange integral in (Ga,Mn)As
W. Heimbrodt, Th. Hartmann, P. J. Klar, M. Lampalzer, W. Stolz, K. Volz, A. Schaper, W. Treutmann, H.-A. Krug von Nidda, A. Loidl, T. Ruf, V. F. Sapega
Physica E 10 (1 - 3) (2001), pp. 175 - 180
Spatial solitons in a pumped semiconductor resonator
V. B. Taranenko, C. O. Weiss, W. Stolz
Optics Letters 26 (2) (2001), pp. 1574 - 1576
Gain spectra of (GaIn)(NAs) laser diodes for the 1.3-µm-wavelength regime
M. Hofmann, A. Wagner, C. Ellmers, C. Schlichenmeier, S. Schäfer, F. Höhnsdorf, J. Koch, W. Stolz, S. W. Koch, W. W. Rühle, J. Hader, J. V. Moloney, E. P. O'Reilly, B. Borchert, A. Yu. Egorov, and H. Riechert
Appl. Phys. Lett. 78 (20) (2001), pp. 3009 - 3011
High-efficiency (AlGa)As/GaAs solar cells grown by MOVPE using TBAs at low-temperatures and low V/III-ratios
C. Agert, F. Dimroth, U. Schubert, A. W. Bett, S. Leu, W. Stolz
Solar Energy Materials & Solar Cells 66 (1 - 4) (2001), pp. 637 - 644
Determination of ion incidence angles in plasma immersion ion implantation by means of a hollow multi-aperture target
M. Galonska, Ch. Gabor, R. W. Thomae, H. Klein, K. Volz and W. Ensinger
Nucl. Instr. Meth. Phys. Res. B 175 - 177 (2001), pp. 658 - 662
Pitting corrosion of aluminium coated with amorphous carbon films by aron ion beam assisted deposition at low process temperature
O. Lensch, K. Volz, M. Kiuchi and W. Ensinger
Nucl. Instr. Meth. Phys. Res. B 175 - 177 (2001), pp. 575 - 579
Heteroepitaxial SiC films grown in Si by CH4 plasma immersion ion implantation: Conditions and mechanism of their formation
K. Volz, Ch. Klatt and W. Ensinger
Nucl. Instr. Meth. Phys. Res. B 175 - 177 (2001), pp. 569 - 574
Inner wall coating of cylinders by plasma immersion ion implantation for corrosion protection
W. Ensinger, K. Volz and B. Enders
Surface and Coatings Technology 136 (1 - 3) (2001), pp. 202 - 206
Silicon carbide and amorphous carbon film formation by plasma immersion ion implantation: a comparison of methane and toluene as plasma forming gases
K. Volz, K. Baba, R. Hatada and W. Ensinger
Surface and Coatings Technology 136 (1 - 3) (2001), pp. 197 - 201
Studies on treatment homogeneity of plasma immersion ion implantation by an optical method
K. Volz, A. Hasse and W. Ensinger
Surface and Coatings Technology 136 (1 - 3) (2001), pp. 80 - 84
2000
Structural properties of (GaIn)(NAs)/GaAs MQW structures grown by MOVPE
F. Höhnsdorf, J. Koch, A. Hasse, K. Volz, A. Schaper, W. Stolz, C. Giannini, L. Tapfer
Physica E 8 (3) (2000), pp. 205 - 209
Structural Properties of (GaIn)(AsN)/GaAs MQW Structures Grown by MOVPE
C. Giannini, E. Carlino, L. Tapfer, F. Höhnsdorf, J. Koch, and W. Stolz
MRS Symp. "GaN and Related Alloys" Boston, USA, Proceedings Vol. 595 (1999), W3.54.1
MRS Internet Journal of Nitride Semiconductor Research (5) 1 (2000), art. no.-W3.54
Nitrogen-induced band formation in GaNxAs1-x studied by photoluminescence under hydrostatic pressure and photomodulated reflectance
P. J. Klar, P. M. A. Vicente, H. Grüning, W. Heimbrodt, J. Koch, F. Höhnsdorf, W. Stolz & J. Camassel
High Pressure Research 18 (1 - 6) (2000), pp. 29 - 34
Growth of antimony-based materials in a multiwafer planetary MOVPE-reactor
C. Agert, P. Lanyi, O. V. Sulima, W. Stolz, and A. W. Bett
IEE Optoelectronics 147 (3) (2000), pp. 188 - 192
Strain-induced modulation versus superlattice ordering in epitaxial (GaIn)P layers
J. Jiang, A. K. Schaper, Z. Spika, and W. Stolz
Phys. Rev. B 62 (23) (2000), pp. 15826 - 15833
Disorder-induced dephasing in semiconductors
S. Weiser, T. Meier, J. Möbius, A. Euteneuer, E. J. Mayer, W. Stolz, M. Hofmann, W. W. Rühle, P. Thomas, and S. W. Koch
Phys. Rev. B 61 (19) (2000), pp. 13088 - 13089
Morphological aspects of continuous and modulated epitaxial growth of (GaIn)P
J. Jiang, A. K. Schaper, Z. Spika, and W. Stolz
J. Appl. Phys. 88 (6) (2000), pp. 3341 - 3348
Structural Investigations of (GaIn)(NAs)/GaAs Multi-Quantum-Wells by Transmission Electron Microscopy
K. Volz, A. Hasse, A. K. Schaper, T. E. Weiric, F. Höhnsdorf, J. Koch and W. Stolz
MRS Proceedings Vol. 618 (2000), p. 291 - 296
From N isoelectronic impurities to N-induced bands in GaNxAs1-x alloy
P. J. Klar, H. Grüning, W. Heimbrodt, J. Koch, F. Höhnsdorf, W. Stolz, P. M. A. Vicente, and J. Camassel
Appl. Phys. Lett. 76 (23) (2000), pp. 3439 - 3441
Observations of interaction-assisted hopping transport in GaAs/Ga1-xAlxAs quantum wells
J. E. Golub, R. Eichmann, G. Strasser, G. Bernatz, S. Nau, W. Stolz, P. Thomas
Journal of Luminescence 91 (1 - 2) (2000), pp. 7 - 12
TEM Investigations of (GaIn)(NAs)/GaAs Multi-Quantum Wells grown by MOVPE
A. Hasse, K. Volz, A. K. Schaper, J. Koch, F. Höhnsdorf, W. Stolz
Crystal Research and Technology 35 (6 - 7) (2000), pp. 787 - 792
Optical characterisation of MOVPE-grown Ga1-xMnxAs semimagnetic semiconductor layers
Th. Hartmann, M. Lampalzer, W. Stolz, K. Megges, J. Lorberth, P. J. Klar, W. Heimbrodt
Thin Solid Films 364 (1 - 2) (2000), pp. 209 - 212
Investigation of Disordered Semiconductor Quantum Wells by Coherent Excitation Spectroscopy
A. Euteneuer, E. Finger, W. Stolz, T. Meier, P. Thomas, S. W. Koch, M. Hofmann, W. W. Rühle, R. Hey, K. H. Ploog
physica status solidi (a) 178 (1) (2000), pp. 183 - 188
Normal-Mode Linewidths in a Semiconductor Microcavity with Various Cavity Qualities
M. Hofmann, D. Karaiskaj, C. Ellmers, T. Maxisch, F. Jahnke, H.-J. Kolbe, G. Weiser, R. Rettig, S. Leu, W. Stolz, S. W. Koch, W. W. Rühle
physica status solidi (a) 178 (1) (2000), pp. 179 - 181
(GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser with ultrabroad temperature operation range
A. Wagner, C. Ellmers, F. Höhnsdorf, J. Koch, C. Agert, S. Leu, M. Hofmann, W. Stolz, and W. W. Rühle
Appl. Phys. Lett. 76 (3) (2000), pp. 271 - 272
LP-MOVPE growth of carbon doped (InGa)P/GaAs HBT using an all-liquid source configuration
P. Velling, M. Agethen, E. Herenda, W. Prost, W. Stolz, F. J. Tegude
Proc. 26th Int. Symp. "Compound Semiconductors", Berlin (1999),
Inst. Phys. Conf. Ser. 166 (2000), p. 71
Quantitative topographic assessment of Cu incorporation in GaAs
M. Bäumler, R. Stibal, W. Stolz, Th. Steinegger, M. Jurisch, M. Maier, W. Jantz
Journal of Crystal Growth 210 (1 - 3) (2000), pp. 207 - 211
Alternative N-, P-, As-precursors for III/V-epitaxy
W. Stolz
Journal of Crystal Growth 209 (2 - 3) (2000), pp. 272 - 278
Strain-driven transition from stepped interfaces to regularly spaced macrosteps in (GaIn)As/Ga(PAs) symmetrically strained superlattices
C. Giannini, T. Baumbach, D. Lübbert, R. Felici, L. Tapfer, T. Marschner, W. Stolz, N. Y. Jin-Phillipp and F. Phillipp
Phys. Rev. B 61 (3) (2000), pp. 2173 - 2179
Coherence in real space: the transition range from bulk to confined states studied by the Franz-Keldysh effect
H. J. Kolbe, C. Agert, W. Stolz, G. Weiser
Physica E 6 (1 - 4) (2000), pp. 173 - 176
Optical characterization of (GaIn)(NAs)/GaAs MQW structures
J. Koch, F. Höhnsdorf und W. Stolz
Journal of Electronic Materials 29 (1) (2000), pp. 165 - 168
Effect of MOVPE growth interruptions on the gallium arsenide interior interface morphology
G. Bernatz, S. Nau, R. Rettig und W. Stolz
Journal of Electronic Materials 29 (1) (2000), pp. 129 - 133
Emission Dynamics and Gain of (GaIn)(NAs)/GaAs Lasers
A. Wagner, C. Ellmers, F. Hohnsdorf, J. Koch, S. Leu, W. Stolz, M. Hofmann, W. W. Rühle,
physica status solidi (b) 221 (1) (2000), pp. 567 - 569
100 fs Carrier Dynamics in GaAs under 100 nm Diameter Apertures
J. Hetzler, A. Brunner, M. Wegener, S. Leu, S. Nau, W. Stolz
physica status solidi (b) 221 (1) (2000), pp. 425 - 428
Coherent excitation spectroscopy of disordered quantum-well structures
E. Finger, S. Kraft, A. Euteneuer, M. Hofmann, W. Stolz, W.W. Rühle
physica status solidi (b) 221 (1) (2000), pp. 373 - 378
Composition and structure of SiCx:H films formed by plasma immersion ion implantation from a methane plasma
K. Volz, Ch. Klatt, W. Ensinger
Mat. Res. Soc. Symp. Proc. 609 (2000), p. 271
Heteroepitaxial growth of 3C-SiC on (100) silicon by C60 and Si molecular beam epitaxy
K. Volz, S. Schreiber, J. W. Gerlach, W. Reiber, B. Rauschenbach, B. Stritzker, W. Assmann and W. Ensinger
Materials Science and Engineering A 289 (1 - 2) (2000), pp. 255 - 264
Nitrogen plasma immersion ion implantation and silicon sputter deposition combined with methane implantation as an in-line process for improving corrosion and wear performance of stainless steels
K. Volz, B. Enders and W. Ensinger
Surface and Coatings Technology 128 - 129 (2000), pp. 479 - 483
Tantalum nitride films formed by ion beam assisted deposition: analysis of the structure in dependence on the ion irradiation intensity
K. Volz, M. Kiuchi and W. Ensinger
Surface and Coatings Technology 128 - 129 (2000), pp. 298 - 302
C-SiC-Si gradient films formed on silicon by ion beam assisted deposition at room temperature
K. Volz, M. Kiuchi, M. Okumura and W. Ensinger
Surface and Coatings Technology 128 - 129 (2000), pp. 274 - 279
Ion-beam assisted deposition of tube inner walls by plasma immersion ion implantation
W. Ensinger and K. Volz
Surface and Coatings Technology 128 - 129 (2000), pp. 270 - 273
Plasma immersion ion implantation of complex-shaped objects: an experimental study on the treatment homogeneity
W. Ensinger, K. Volz and T. Höchbauer
Surface and Coatings Technology 128 - 129 (2000), pp. 265 - 269
Ion beam-assisted deposition of nitrides of the 4th group of transition metals
W. Ensinger, K. Volz and M. Kiuchi
Surface and Coatings Technology 128 - 129 (2000), pp. 81 - 84
Thin film oxides as probe for homogeneity measurements of 3-dimensional objects treated by plasma immersion ion implantation
W. Ensinger and K. Volz
Nucl. Instr. Meth. Phys. Res. B 166 - 167 (2000), pp. 154 - 158
Ammonia plasma immersion ion implantation into silicon: Composition and structure of the resulting silicon-nitrogen-hydrogen system
K. Volz, B. Rauschenbach, C. Klatt and W. Ensinger
Nucl. Instr. Meth. Phys. Res. B 166 - 167 (2000), pp. 75 - 81
1999
Confinement effects in bulk samples derived from the Franz-Keldysh effect
H. J. Kolbe, C. Agert, W. Stolz, and G. Weiser
Phys. Rev. B 59 (23) (1999), pp. 14896 - 14898
Investigation of strain induced patterning in superlattices by grazing incidence diffraction - comparison of morphological and strain ordering
G. T. Baumbach, C. Giannini, D. Lübbert, R. Felici, L. Tapfer, T. Marschner and W. Stolz
Journal of Physics D: Appl. Phys. 32 (10A) (1999), A212 - A215
Optical Spectroscopic Studies of N-Related Bands in Ga(N,As)
H. Grüning, L. Chen, Th. Hartmann, P. J. Klar, W. Heimbrodt, F. Höhnsdorf, J. Koch and W. Stolz
physica status solidi (b) 215 (1) (1999), pp. 39 - 45
Experimental investigation of structures of interior interfaces in GaAs
G. Bernatz, S. Nau, R. Rettig, H. Jänsch, and W. Stolz
J. Appl. Phys. 86 (12) (1999), pp. 6752 - 6757
TBAs and TBP - improved group V sources for MOVPE
W. Stolz and T. Whittaker
Compound Semiconductor 5 (1999), p. 29
Patterned growth of (AlGa)As using metalorganic vapor-phase epitaxy
L. Hofmann, A. Knauer, I. Rechenberg, M. Weyers, W. Stolz
Journal of Crystal Growth 206 (4) (1999), pp. 255 - 262
DBR lasers emitting at 1060 nm with first-order grating in InGaP waveguide layer
L. Hofmann, A. Klehr, A. Knauer, V. B. Smirnitski, W. Stolz
Electronics Letters 35 (11) (1999), pp. 902 - 903
Coherent Excitation Spectroscopy on Inhomogeneous Exciton Ensembles
A. Euteneuer, E. Finger, M. Hofmann, W. Stolz, T. Meier, P. Thomas, S. W. Koch, W. W. Rühle, R. Hey and K. Ploog
Phys. Rev. Lett. 83 (10) (1999), pp. 2073 - 2076
Linewidths in a semiconductor microcavity with variable strength of normal-mode coupling
D. Karaiskaj, T. Maxisch, C. Ellmers, H.-J.Kolbe, G. Weiser, R. Rettig, S. Leu, W. Stolz, M. Hofmann, F. Jahnke, S. W. Koch, and W. W. Rühle
Phys. Rev. B 59 (21) (1999), pp. 13525 - 13527
Magnetoexciton quantum beats: influence of Coulomb correlations
M. Koch, S. T. Cundiff, W. H. Knox, J. Shah, W. Stolz
Solid State Communications 111 (10) (1999), pp. 553 -558
Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelenghts in the range 1.28 - 1.38 µm
F. Höhnsdorf, J. Koch, S. Leu, W. Stolz, B. Borchert, M. Druminski
Electronics Letters 35 (7) (1999), pp. 571 - 572
Ultrafast (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser for the 1.3 µm wavelength regime
C. Ellmers, F. Höhnsdorf, J. Koch, C. Agert, S. Leu, D. Karaiskaj, M. Hofmann, W. Stolz, and W. W. Rühle
Appl. Phys. Lett. 74 (16) (1999), pp. 2271 - 2273
Excitonic wave packets observed in space- and time-resolved pump and probe experiments
R. Otremba, S. Grosse, M. Koch, J. Feldmann, V. M. Axt, T. Kuhn, W. Stolz
Solid State Communications 109 (5) (1999), pp. 317 - 322
Ultrafast nonlinear subwavelength solid immersion spectroscopy at T = 8K
M. Vollmer, H. Giessen, W. Stolz, W. W. Rühle, L. Ghislain, and V. Elings
Appl. Phys. Lett. 74 (13) (1999), pp. 1791 - 1793
Optically pumped (GaIn)As/Ga(PAs) vertical-cavity surface-emitting lasers with optimized dynamics
C. Ellmers, M. R. Hofmann, D. Karaiskaj, S. Leu, W. Stolz, W. W. Rühle, and M. Hilpert
Appl. Phys. Lett. 74 (10) (1999), pp. 1367 - 1369
Ultrafast nonlinear subwavelength solid immersion spectroscopy at T = 8K: an alternative to nonlinear scanning near-field optical microscopy
M. Vollmer, H. Giessen, W. Stolz, W. W. Rühle, A. Knorr, S. W. Koch, L. Ghislain, V. Elings
Journal of Microscopy 194 (2 - 3) (1999), pp. 523 - 527
LP-MOVPE grown GaAs- and InP-based HBTs using all-liquid alternative sources
P. Veiling, M. Agethen, E. Herenda, W. Prost, W. Stolz, F.-J. Tegude
11th Int. Conf. "Indium Phosphide and Related Materials" (1999), pp. 467 - 470
Structural investigations of silicon carbide films formed by fullerene carbonization of silicon
K. Volz, S. Schreiber, M. Zeitler, B. Rauschenbach, B. Stritzker and W. Ensinger
Surface and Coatings Technology 122 (2 - 3) (1999), pp. 101 - 107
Formation of hafnium nitride films by medium-energy ion-beam-assisted deposition
K. Volz, M. Kiuchi and W. Ensinger
Surface and Coatings Technology 120 - 121 (1999), pp. 353 - 357
Three-dimensional dose uniformity of plasma immersion ion implantation shown with the example of macro-trenches
K. Volz, M. Kiuchi and W. Ensinger
Surface and Coatings Technology 120 - 121 (1999), pp. 347 - 352
An apparatus for in-situ or sequential plasma immersion ion beam treatment in combination with r. f. sputter deposition or triode d. c. sputter deposition
W. Ensinger, K. Volz and B. Enders
Surface and Coatings Technology 120 - 121 (1999), pp. 343 - 346
Synthesis of buried silicon oxide layers by water plasma immersion ion implantation
I. Großhans, K. Volz, W. Ensinger and B. Rauschenbach
Nucl. Instr. Meth. Phys. Res. B 155 (1 - 2) (1999), pp. 67 - 74
Low-energy ion assisted deposition of epitaxial gallium nitride films
J. W. Gerlach, D. Schrupp, K. Volz, M. Zeitler, B. Rauschenbach and A. Anders
Nucl. Instr. Meth. Phys. Res. B 148 (1 - 4) (1999), p. 406 - 410
Influence of substrate temperature on damage buildup and removal of ion implanted gallium nitride
C. Liu, A. Wenzel, K. Volz and B. Rauschenbach
Nucl. Instr. Meth. Phys. Res. B 148 (1 - 4) (1999), pp. 396 - 400
Formation of crystalline SiC films by CH4 plasma immersion ion implantation into Si
K. Volz, B. Rauschenbach, B. Stritzker and W. Ensinger
Nucl. Instr. Meth. Phys. Res. B 148 (1 - 4) (1999), pp. 540 - 544
1998
GaAs-based VCSEL-structures with strain-compensated (GaIn)As/Ga(PAs)-MQWH active regions grown by using TBAs and TBP
C. Ellmers, S. Leu, R. Rettig, M. Hofmann, W. W. Rühle, W. Stolz
Journal of Crystal Growth 195 (1 - 4) (1998), pp. 630 - 636
Investigations of (GaIn)(NAs) bulk layers and (GaIn)(NAs)/GaAs multiple quantum well structures grown using tertiarybutylarsine (TBAs) and 1,1-dimethylhydrazine (UDMHy)
F. Höhnsdorf, J. Koch, C. Agert, W. Stolz
Journal of Crystal Growth 195 (1 - 4) (1998), pp. 391 - 396
C- and O-incorporation in (AlGa)As epitaxial layers grown by MOVPE using TBAs
S. Leu, F. Höhnsdorf, W. Stolz, R. Becker, A. Salzmann, A. Greiling
Journal of Crystal Growth 195 (1 - 4) (1998), pp. 98 - 104
Si-doping of MOVPE grown InP and GaAs by using the liquid Si source ditertiarybutyl silane
S. Leu, H. Protzmann, F. Höhnsdorf, W. Stolz, F. Steinkirchner, E. Hufgard
Journal of Crystal Growth 195 (1 - 4) (1998), pp. 91 - 97
Growth of Ru doped semi-insulating InP by low pressure metalorganic chemical vapor deposition
A. Dadgar, O. Stenzel, L. Köhne, A. Näser, M. Straßburg, W. Stolz, D. Bimberg, H. Schumann
Journal of Crystal Growth 195 (1 - 4) (1998), pp. 69 - 73
X-ray diffraction study of intentionally disordered (GaIn)As/Ga(PAs) heterostructures
R. Rettig, T. Marschner, W. Stolz, and L. Tapfer
J. Appl. Phys. 84 (1) (1998), pp. 237 - 247
Atomic scale properties of interior interfaces of semiconductor heterostructures as detemined by quasi-digital highly selective etching and atomic force microscopy
R. Rettig, W. Stolz
Physica E 2 (1- 4) (1998), pp. 277 - 281
Coherent Excitation of Magnetoexciton Wavepackets
S. T. Cundiff, M. Koch, J. Shah, W. H. Knox, W. Stolz
physica status solidi (b) 206 (1) (1998), pp. 77 - 85
Structural investigations of chromium nitride films formed by ion beam-assisted deposition
K. Volz, M. Kiuchi and W. Ensinger
Surface and Coatings Technology 108 - 109 (1998), pp. 303 - 307
Microscopy of SiC Layers Grown by C60 Deposition on Si (100)
R. Scholz, U. Gösele, K. Volz and B. Rauschenbach
Jpn. J. Appl. Phys. 37 (11) (1998), pp. 6090 - 6093
Microstructure and composition of titanium nitride formed by ion beam enhanced nitrogen sorption of evaporated titanium under argon ion irradiation
W. Ensinger and K. Volz
Materials Science and Engineering A 253 (1 - 2) (1998), pp. 234 - 239
Ion implantation in GaN at liquid-nitrogen temperature: Structural characteristics and amorphization
C. Liu, B. Mensching, M. Zeitler, K. Volz, and B. Rauschenbach
Phys. Rev. B 57 (4) (1998), pp. 2530 - 2535
Structural investigations of titanium nitride films formed by plasma immersion ion implantation
K. Volz, W. Ensinger, B. Stritzker and B. Rauschenbach
Surface and Coatings Technology 103 - 104 (1998), pp. 257 - 261
Formation of silicon carbide and amorphous carbon films by pulse biasing silicon to a high voltage in a methane electron cyclotron resonance microwave plasma
K. Volz, W. Ensinger, W. Reiber, B. Rauschenbach and B. Stritzker
Journal of Materials Research 13 (7) (1998), p. 1765 - 1768
Formation of silicon carbide and nitride by ECR microwave plasma immersion ion implantation
K. Volz, W. Ensinger, B. Rauschenbach and B. Stritzker
Nucl. Instr. Meth. Phys. Res. B 141 (1 - 4) (1998), pp. 663 - 669
Formation of silicon nitride layers by nitrogen ion irradiation of silicon biased to a high voltage in an electron cyclotron resonance microwave plasma
W. Ensinger, K. Volz, G. Schrag, B. Stritzker, and B. Rauschenbach
Appl. Phys. Lett. 72 (10) (1998), 1164
Synthesis of epitaxial 3C-SiC by C60 carbonization of silicon on sapphire
K. Volz, J. Müller, W. Reiber, B. Rauschenbach and B. Stritzker
Carbon 36 (5 - 6) (1998), pp. 817 - 820
Composition and microstructure of titanium nitride formed on Ti6Al4V by nitrogen plasma immersion ion implantation
M. Rinner, K. Volz, W. Ensinger, W. Assmann and B. Rauschenbach
Surface and Coatings Technology 100 - 101 (1998), pp. 366 - 371
1997
Relaxation Dynamics of Electron-Hole Pairs Studied by Spatiotemporal Pump and Probe Experiments
S. Grosse, R. Arnold, G. von Plessen, M. Koch, J. Feldmann, V. M. Axt, T. Kuhn, R. Rettig, W. Stolz
physica status solidi (b) 204 (1) (1997), pp. 147 - 150
Biexcitonic binding energies in the transition regime from three- to two-dimensional semiconductors
A. Euteneuer, J. Möbius, R. Rettig, E. J. Mayer, M. Hofmann, W. Stolz, E. O. Göbel, and W. W. Rühle
Phys. Rev. B 56 (16) (1997), R10028 - R10031
Diffuse X-ray reflection from multilayers with stepped interfaces
V. Holý, C. Giannini, L. Tapfer, T. Marschner, W. Stolz
Phys. Rev. B 55 (15) (1997), pp. 9960 - 9968
Erratum: Phys. Rev. B 56 (15) (1997), p. 9975
Thickness modulation in symmetrically strained III-V semiconductor superlattices grown by MOVPE
N. Y. Jin-Phillipp, F. Phillipp, T. Marschner, W. Stolz
Journal of Materials Science: Materials in Electronics 8 (5) (1997), pp. 289 - 299
Confinement Dependence of Biexcitonic Binding Energies in Semiconductor Quantum Wells
A. Euteneuer, J. Möbius, R. Rettig, M. Hofmann, E. J. Mayer, W. Stolz, E. O. Göbel, W. W. Rühle
physica status solidi (a) 164 (1) (1997), pp. 253 - 258
Structural characteristics of highly ordered (GaIn)P
J. Jiang, A. K. Schaper, Z. Spika, W. Stolz, P. Werner, and L. Tóth
Conference "Microscopy of Semiconducting Materials", Oxford (1997),
Inst. Phys. Conf. Ser. 157 (1997), pp. 261 - 264
Effects of Coulomb interaction in intentionally disordered semiconductor superlattices
G. Richter, W. Stolz, P. Thomas, S. W. Koch, K. Maschke, I. P. Zvyagin
Superlattices and Microstructures 22 (4) (1997), pp. 475 - 480
Structural ordering and interface morphology in symmetrically strained (GaIn)As/Ga(PAs) superlattices grown on off-oriented GaAs(100)
C. Giannini, L. Tapfer, Y. Zhuang, L. DeCaro, T. Marschner and W. Stolz
Phys. Rev. B 55 (8) (1997), pp. 5276 - 5283
Growth and structural properties of (GaIn)As/Ga(PAs) intentionally disordered superlattice structures grown by metalorganic vapor phase epitaxy
R. Rettig, T. Marschner, L. Tapfer, W. Stolz, E. O. Göbel
Journal of Crystal Growth 170 (1 - 4) (1997), pp. 748 - 751
Correlation of ordering formation and surface structure in (GaIn)P using modulated MOVPE
Z. Spika, C. Zimprich, W. Stolz, E. O. Göbel, J. Jiang, A. Schaper, P. Werner
Journal of Crystal Growth 170 (1 - 4) (1997), pp. 257 - 262
Properties of (Ga0.47In0.53)As epitaxial layers grown by metalorganic vapor phase epitaxy (MOVPE) using alternative arsenic precursors
H. Protzmann, F. Höhnsdorf, Z. Spika, W. Stolz, E. O. Göbel, M. Müller, J. Lorberth
Journal of Crystal Growth 170 (1 - 4) (1997), pp. 155 - 160
Lateral periodicity in highly-strained (GaIn)As/Ga(PAs) superlattices investigated by X-ray scattering techniques
Y. Zhuang, C. Giannini, L. Tapfer, T. Marschner, W. Stolz,
Nuovo Cimento della Societa Italiana di Fisica D 19 (2 - 4) (1997), pp. 377 - 383
Lattice expansion of Ca and Ar ion implanted GaN
C. Liu, B. Mensching, K. Volz, and B. Rauschenbach
Appl. Phys. Lett. 71 (16) (1997), 2313
Electron microscopy of SiC layers produced by fullerene carbonization of silicon
J. Müller, K. Volz, R. Scholz, B. Stritzker, B. Rauschenbach
European Journal of Cell Biology 74: 126-126 Suppl. 45 (1997)
SiC Precipitate Formation during high Dose Carbon Implantation into Silicon
J. K. N. Lindner, K. Volz, and B. Stritzker
Mat. Res. Soc. Symp. Proc. 438 (1997), pp. 289 - 294
Formation of Buried SiC Layers in Silicon by Ion Beam Synthesis
K. Volz, J. K. N. Lindner and B. Stritzker
Materials Science Forum 248 - 249 (1997), pp. 237 - 240
Ion Beam Induced Epitaxial Crystallization of Buried SiC Layers in Silicon
J. K. N. Lindner, K. Volz and B. Stritzker
Materials Science Forum 248 - 249 (1997), pp. 73 - 78
Ion beam modification of Si/SiC/Si layer systems
K. Volz, J. K. N. Lindner and B. Stritzker
Nucl. Instr. Meth. Phys. Res. B 127 - 128 (1997), pp. 355 - 359
1996
Spectrally resolved four-wave mixing experiments on bulk GaAs with 14-fs pulses
M. U. Wehner, D. Steinbach, M. Wegener, T. Marschner, and W. Stolz
J. Opt. Soc. Am. B 13 (5) (1996), pp. 977 - 980
Non-Markovian Relaxation in GaAs: Four-Wave Mixing Experiments Using 15 fs Pulses
M. Wegener, M. U. Wehner, D. Steinbach, L. Bányai, D. B. Tran-Thoai, E. Reitsamer, H. Haug & W. Stolz
Proc. 23rd Int. Conf. "Physics of Semiconductors", Berlin (1996)
Eds. M. Scheffler and R. Zimmermann, World Scientific (Singapore 1996), pp. 633 - 640
Structural and Electronic Properties of Ordered (GaIn)P
Z. Spika, J. Jiang, C. Zimprich, P. Großmann, A. Schaper, W. Stolz, E. O. Göbel, P. Werner & J. Feldmann
Proc. 23rd Int. Conf. "Physics of Semiconductors", Berlin (1996)
Eds. M. Scheffler and R. Zimmermann, World Scientific (Singapore 1996), pp. 465 - 468
Optical Coherence in Semiconductors: Strong Emission Mediated by Nondegenerate Interactions
S. T. Cundiff, M. Koch, W. H. Knox, J. Shah, and W. Stolz
Phys. Rev. Lett. 77 (6) (1996), pp. 1107 - 1110
Disorder mediated biexcitonic beats in semiconductor quantum wells
T. F. Albrecht, K. Bott, T. Meier, A. Schulze, M. Koch, S. T. Cundiff, J. Feldmann, W. Stolz, P. Thomas, S. W. Koch, and E. O. Göbel
Phys. Rev. B 54 (7) (1996), pp. 4436 - 4439
Investigations of the strutural stability of highly strained [(Al)GaIn]As/Ga(PAs) multiple quantum wells
T. Marschner, S. Lutgen, M. Volk, W. Stolz, and E. O. Göbel
Appl. Phys. Lett. 69 (15) (1996), pp. 2249 - 2251
Optical bistability in symmetrically strained (GaIn)As/Ga(PAs) superlattices
G. Bastian, G. von Plessen, J. Feldmann, J. Hader, T. Marschner, W. Stolz, and E. O. Göbel
Appl. Phys. Lett. 69 (3) (1996), pp. 308 - 310
Metalorganic vapor phase epitaxy of InP using the novel P-source ditertiarybutyl phosphine (DitBuPH)
H. Protzmann, Z. Spika, B. Spill, G. Zimmermann, W. Stolz, E. O. Göbel, P. Gimmnich und J. Lorberth
Journal of Electronic Materials 25 (3) (1996), pp. 443 - 448
New Developments of Less Toxic Group-V Precursors for the Metalorganic Vapour Phase Epitaxy of III-V-Semiconductors: In-Situ-Formation of As-H Functions by Thermal ß-Elimination of Specific As-Trialkyl Compounds
G. Zimmermann, Z. Spika, T. Marschner, W. Stolz, E. O. Göbel, P. Gimmnich, R. Becker, J. Lorberth, A. Greiling and A. Salzmann
Jpn. J. Appl. Phys. 35 (4A) (1996), pp. 2035 - 2042
Transmission electron microscopy study on defect reduction in GaAs on Si heteroepitaxial layers grown by metalorganic vapor phase epitaxy
N. Y. Jin-Phillipp, F. Phillipp, T. Marschner, W. Stolz, E. O. Göbel
Journal of Crystal Growth 158 (1 - 2) (1996), pp. 28 - 36
Strain induced self organized growth of lateral periodic strained layer superlattices on off-oriented substrates by metalorganic vapour phase epitaxy
T. Marschner, L. Tapfer, N. Y. Jin-Phillipp, F. Phillipp, S. Lutgen, M. Volk, W. Stolz, E. O. Göbel
Solid-State Electronics 40 (1 - 8) (1996), pp. 819 - 823
Magnetooptical investigations of symmetrically strained (GaIn)As/Ga(PAs) multiple quantum well structures
M. Volk, S. Lutgen, T. Marschner, W. Stolz, E. O. Göbel, P. C. M. Christiansen, J. C. Maan
Solid-State Electronics 40 (1 - 8) (1996), pp. 585 - 589
Ion beam induced amorphization and recrystallization of Si/SiC/Si layer systems
K. Volz, J. K. N. Lindner and B. Stritzker
Nucl. Instr. Meth. Phys. Res. B 120 (1 - 4) (1996), pp. 133 - 138
Formation of buried epitaxial silicon carbide layers in silicon by ion beam synthesis
J. K. N. Lindner, K. Volz, U. Preckwinkel, B. Götz, A. Frohnwieser, B. Rauschenbach and B. Stritzker
Materials Chemistry and Physics 46 (2 - 3) (1996), pp. 147 - 155
Buried epitaxial layers of 3C-SiC in Si (100) and Si (111) by ion beam synthesis: A structural characterization
J. K. N. Lindner, K. Volz, and B. Stritzker
Inst. Phys. Conf. Ser. 142 Chapter 1 (1996), pp. 145 - 148
1995
Near-field optical characterization of the photoluminescence from partially ordered (GaIn)P
M. J. Gregor, P. G. Blome, R. G. Ulbrich, P. Grossmann, S. Grosse, J. Feldmann, W. Stolz, E. O. Göbel, D. J. Arent, M. Bode, K. A. Bertness, and J. M. Olson
Appl. Phys. Lett. 67 (24) (1995), pp. 3572 - 3574
Exciton-LO-Phonon Quantum Kinetics: Evidence of Memory Effects in Bulk GaAs
L. Banyai, D. B. Tran Thoai, E. Reitsamer, H. Haug, D. Steinbach, M. U. Wehner, M. Wegener, T. Marschner and W. Stolz
Phys. Rev. Lett. 75 (11) (1995), pp. 2188 - 2191
Carrier effective masses in symmetrically strained (GaIn)As/Ga(PAs) multiple-quantum-well structures
M. Volk, S. Lutgen, T. Marschner, W. Stolz, E. O. Göbel, P. C. M. Christiansen and J. C. Maan
Phys. Rev. B 52 (15) (1995), pp. 11096 - 11104
Structural investigations of the direct growth of AlGaAs/GaAs quantum wire structures by MOVPE
W. Stolz
Proc. of the NATO Adv. Res. Workshop "Low Dimensional Structures Prepared by Growth or Regrowth on Patterned Substrates",
Eds. K. Eberl, P. M. Petroff and P. Demeester, Ringberg in Rottach-Egern (1995), Kluwer Academic Publishers, Dordrecht (1995), ISBN 0-7923-3679-8
NATO ASI Series E 298 (1995), pp. 301 - 312
Design and application of a femtosecond optical parametric oscillator for time-resolved spectroscopy of semiconductor heterostructures
T. F. Albrecht, J. H. H. Sandmann, J. Feldmann, W. Stolz, E. O. Göbel, H. Hillmer, R. Lösch und W. Schlapp
Appl. Phys. B 60 (5) (1995), pp. 459 - 467
Atomic incorporation efficiencies for strained (GaIn)As/Ga(PAs) superlattice structures grown by metalorganic vapour phase epitaxy
S. Lutgen, T. Marschner, W. Stolz, E. O. Göbel, L. Tapfer
Journal of Crystal Growth 152 (1 - 2) (1995), pp. 1 - 13
Investigations on deep traps in GaAs and (AlxGa1-x)As bulk layers grown by metalorganic vapour-phase epitaxy using the new alternative arsenic precursor diethyl-tert-butylarsin
Z. Spika, G. Zimmermann, W. Stolz, E. O. Göbel, P. Gimmnich, J. Lorberth, A. Greiling, A. Salzmann, S. Weiß, U. Sudjadi, A. Bock, R. Kassing
Journal of Crystal Growth 146 (1 - 4) (1995), pp. 521 - 526
1994
Determination of excitonic binding energies in symmetrically strained (GaIn)As/Ga(AsP) multiple quantum wells using quantum beat spectroscopy
M. Koch, M. Volk, T. Meier, J. Feldmann, W. Stolz, P. Thomas, E. O. Göbel
Superlattices and Microstructures 15 (3) (1994), pp. 329 - 332
Strain-induced changes in epitaxial layer morphology of highly-strained III/V-semiconductor heterostructures
T. Marschner, S. Lutgen, M. Volk, W. Stolz, E. O. Göbel, N. Y. Jin-Phillipp, F. Phillipp
Superlattices and Microstructures 15 (2) (1994), pp. 183 - 186
Coherent dynamics of exciton wavepackets in semiconductor and heterostructures
J. Feldmann, M. Koch, E. O. Göbel, F. Jahnke, T. Meier, W. Schäfer, P. Thomas, S. W. Koch, H. Nickel, S. Luttgen and W. Stolz
Semiconductor Science and Technology 9 (1994), pp. 1965 - 1971
Rabi Flopping in Semiconductors
S. T. Cundiff, A. Knorr, B. Spill, J. Feldmann, W. Stolz, S. W. Koch, E. O. Göbel, H. Nickel
Proc. 9th Int. Conf. "Ultrafast Phenomena", Dana Point (1994),
Ed. P. F. Barbara, Springer (1994), ISBN 3540584552
GaAs substrate pretreatment and metalorganic vapour phase epitaxy of GaAs, AlAs and (AlGa)As using ß-eliminating trialkyl-As precursors
G. Zimmermann, Z. Spika, T. Marschner, B. Spill, W. Stolz, E. O. Göbel, P. Gimmnich, J. Lorberth, A. Greiling, A. Salzmann
Journal of Crystal Growth 145 (1 - 4) (1994), pp. 512 - 519
Excitonic and free-carrier polarizations of bulk GaAs studied by femtosecond coherent spectroscopy
A. Leitenstorfer, A. Lohner, K. Rick, P. Leisching, T. Elsaesser, T. Kuhn, F. Rossi, W. Stolz and K. Ploog
Phys. Rev. B 49 (23) (1994), pp. 16372 - 16380
Metalorganic vapor-phase epitaxy of III/V-semiconductors using alternative metalorganic-group-V-compounds decomposing under in-situ formation of group-V-H-functions
G. Zimmermann, Z. Spika, W. Stolz, E. O. Göbel, P. Gimmnich, J. Lorberth, A. Greiling, A. Salzmann
Proc. 20th Int. Symp. "GaAs and Related Compounds", Freiburg (1993),
Inst. Phys. Conf. Ser. 136 (1994), pp. 613 - 618
Femtosecond degenerate four-wave-mixing on unstrained (InGa)As/InP multiple-quantum-wells using an optical parametric oscillator
T. F. Albrecht, J. H. H. Sandmann, S. T. Cundiff, J. Feldmann, W. Stolz, E. O. Göbel
Solid-State Electronics 37 (4 - 6) (1994), pp. 1327 - 1331
Optical properties of symmetrically strained (GaIn)As/Ga(PAs) superlattices grown by metalorganic vapour phase epitaxy
S. Lutgen, T. F. Albrecht, T. Marschner, W. Stolz, E. O. Göbel
Solid-State Electronics 37 (4 - 6) (1994), p. 905 - 909
Direct epitaxial growth of (AlGa)As/GaAs quantum wires by orientation-dependent metalorganic vapour phase epitaxy
D. Bertram, B. Spill, W. Stolz, E. O. Göbel
Solid-State Electronics 37 (4 - 6) (1994), pp. 591 - 596
1993
Coherent excitonic and free carrier dynamics in bulk GaAs and heterostructures
T. Kuhn, E. Binder, F. Rossi, A. Lohner, K. Rick, P. Leisching, A. Leitenstorfer, T. Elsaesser, W. Stolz
Proc. of the NATO Adv. Res. Workshop "Coherent optical interactions in semiconductors",
Ed. R. T. Phillips, Cambridge (1993), Plenum Publishing Corporation (1994), ISBN 0-306-44737-1
NATO ASI Series B 330 (1994)
Improvements in the heteroepitaxial growth of GaAs on Si by MOVPE
T. Marschner, W. Stolz, E. O. Göbel, F. Phillipp, M. Müller, J. Lorberth
Materials Science and Engineering B 21 (2 - 3) (1993), pp. 266 - 269
Metal-organic vapour-phase epitaxial growth of symmetrically strained (GaIn)As/Ga(PAs) superlattices
S. Lutgen, T. Marschner, T. F. Albrecht, W. Stolz, E. O. Göbel, L. Tapfer
Materials Science and Engineering B 21 (2 - 3) (1993), pp. 249 - 252
Direct growth of (AlGa)As/GaAs quantum wires by metalorganic vapour phase epitaxy
D. Bertram, W. Stolz, E. O. Göbel
Journal of Crystal Growth 132 (1 - 2) (1993), pp. 179 - 180
Transient four-wave mixing on (InGa)As/InP multiple quantum wells using a femtosecond optical parametric oscillator
T. F. Albrecht, J. H. H. Sandmann, J. Feldmann, W. Stolz, E. O. Göbel, A. Nebel, C. Fallnich, and R. Beigang
Appl. Phys. Lett. 63 (14) (1993), pp. 1945 - 1947
Coherent excitonic and free-carrier polarizations of bulk GaAs studied by femtosecond photon-echo spectroscopy
A. Lohner, K. Rick. P. Leisching, A. Leitenstorfer, T. Elsässer, T. Kuhn, F. Rossi, and W. Stolz
Proc. 8th Int. Conf. "Hot Carriers in Semiconductors", Oxford (1993) in
Semiconductor Science and Technology 9 (5S) (1994), pp. 425 - 428
Coherent optical polarization of bulk GaAs studied by femtosecond photon-echo spectroscopy
A. Lohner, K. Rick, P. Leisching, A. Leitenstorfer, T. Elsässer, T. Kuhn, F. Rossi, and W. Stolz
Phys. Rev. Lett. 71 (1) (1993), pp. 77 - 80
Amino-arsine and -phosphine compounds for the MOVPE of III-V semiconductors
G. Zimmermann, H. Protzmann, T. Marschner, O. Zsebök, W. Stolz, E. O. Göbel, P. Gimmnich, J. Lorberth, T. Filz, P. Kurpas, W. Richter
Journal of Crystal Growth 129 (1 - 2) (1993), pp. 37 - 44
New group III aluminium and gallium hydride precursors for metal-organic vapour-phase epitaxy
R. Dorn, M. Müller, J. Lorberth, G. Zimmermann, H. Protzmann, W. Stolz, E. O. Göbel
Materials Science and Engineering B 17 (1 - 3) (1993), pp. 25 - 28
New alternative arsenic precursors for the metal-organic vapour-phase epitaxy of III-V semiconductors: in-situ formation of As-H functionality by ß elimination of specific metal-organic arsenic compounds
P. Gimmnich, A. Greiling, J. Lorberth, C. Thalmann, K. Rademann, G. Zimmermann, H. Protzmann, W. Stolz, E. O. Göbel
Materials Science and Engineering B 17 (1 - 3) (1993), pp. 21 - 24
1992
Synthesis of Gallane-Amine adducts as potential precursors for GaAs and (AlGa)As MOVPE processes and the crystal structure of the {gallane 1,3-bis(dimethylamino)propane} adduct H3Ga N(CH3)2(CH2)3N(CH3) 2
J. Lorberth, R. Dorn, S. Wocadlo, W. Massa, E. O. Göbel, T. Marschner, H. Protzmann, O. Zsebök, W. Stolz
Advanced Materials 4 (9) (1992), pp. 576 - 579
In-situ formation of As-H functions by ß-elimination of specific metalorganic arsenic compounds for the MOVPE of III/V semiconductors
G. Zimmermann, H. Protzmann, W. Stolz, E. O. Göbel, P. Gimmnich, A. Greiling, J. Lorberth, C. Thalmann, K. Rademann
Journal of Crystal Growth 124 (1 - 4) (1992), pp. 136 - 141
Metalorganic vapour phase epitaxy (MOVPE) of III/V-semiconductor heterostructures using alternative precursor molecules: new developments
W. Stolz
Proc. 12th General Conf. of the Condensed Matter Division of the European Physical Society, Prag (1992),
Physica Scripta T 45 (1992), pp. 186 - 191
Transient-grating experiments for the study of electron-hole separation in an electric field
J. Feldmann, P. Grossmann, W. Stolz, E. O. Göbel, and K. Ploog
Semiconductor Science and Technology 7 (3B) (1992), pp. B130 - B132
1991
Transient photoconductivity in amorphous Si1-xCx:H
A. Pohlmann, R. Fischer, R. Brüggemann, W. Stolz, E. O. Göbel
Journal of Non-Crystalline Solids 137 - 138 (1) (1991), pp. 547 - 550
Group III hydride precursors for the metalorganic vapour phase epitaxy (MOVPE) of (AlGa)As/GaAs heterostructures
H. Protzmann, T. Marschner, O. Zsebök, W. Stolz, E. O. Göbel, R. Dorn, J. Lorberth
Journal of Crystal Growth 115 (1 - 4) (1991), pp. 248 - 253
Halbleitmaterialien und -strukturen für die Optoelektronik und Photonik
E. O. Göbel, W. Elsäßer, W. Stolz
in "Halbleiter in Forschung und Technik: Grundlagen, Anwendungen und Perspektiven",
Hrsg. J. Werner, J. Weber, W. Rühle,
Expert Verlag Ehningen (1991), ISBN 3-8169-0707-5, p. 142
Dynamics and spectral characteristics of exciton bleaching in type-II AlxGa1-xAs/AlAs superlattices
J. Feldmann, E. Göbel, W. Stolz, K. Ploog, P. Dawson, C. T. Foxon
Superlattices and Microstructures 9 (2) (1991), pp. 241 - 244
Optical study of electronic states of In0.53Ga0.47As/In0.52Al0.48As quantum wells in high electric fields
K. Satzke, G. Weiser, W. Stolz, and K. Ploog
Phys. Rev. B 43 (3) (1991), pp. 2263 - 2271
Strain relaxation and influence of residual strain in GaAs and (AlGa)As/GaAs heterostructures grown on (100) Si by molecular beam epitaxy
W. Stolz, K. Nozawa, Y Horikoshi, L. Tapfer, K. Ploog
Proc. of the NATO Adv. Res. Workshop "Condensed Systems of Low Dimensionality",
Eds. J. L. Beeby, P. K. Bhattacharya, P. Ch. Gravelle, F. Koch, D. J. Lockwood, Marmaris (1990), Plenum Publishing Corporation (1991), ISBN 0-306-43887-9
NATO ASI Series B 253 (1991)
1990
Alternative precursors for the growth of (AlGa)As/GaAs modulation-doped heterostructures by metalorganic vapor-phase epitaxy
W. Stolz, H. Protzmann, E. Göbel, M. Hostalek, L. Pohl
Proc. 17th Int. Symp. "GaAs and Related Compounds", Jersey (1990)
Inst. Phys. Conf. Ser. 112 (1990), pp. 155 - 160
Transient Reshaping of intersubband absorption spectra in a ternary multiple quantum well structure
R. J. Bäuerle, T. Elsässer, H. Lobentanzer, W. Stolz, K. Ploog
Proc. 20th Int. Conf. "Physics of Semiconductors", Thessaloniki (1990),
Eds. E. M. Anastassakis, J. D. Joannopoulos, World Scientific Publishing (1990)
Absorption and electroabsorption spectra of (GaIn)As/(AlIn)As quantum wells and superlattices
K. Satzke, W. Stolz, G. Weiser
Proc. IEEE Conf. "Modulation Spectroscopy" (1990)
Influence of GaAs buffer layer growth and annealing conditions on the quality of GaAs/AlAs superlattices grown on (100) Si by molecular beam epitaxy
W. Stolz, G. E. Crook, L. Tapfer, K. Ploog
Proc. 1st Int. Conf. "Epitaxial Crystal Growth", Budapest (1990)
Ed. E. Lendvay, Trans Tech Publications Ltd. (1991), ISBN-10: 0878496165
Transient intersubband absorption spectra of hot electrons in a modulation-doped (GaIn)As/(AlIn)As multiple quantum well structure
R. J. Bäuerle, T. Elsässer, H. Lobentanzer, W. Stolz, K. Ploog
Proc. 20th Int. Conf. "Quantum Electronics"
Radiative recombination processes and fermi edge singularity in modulation doped n-type GaInAs/AlInAs multiple quantum wells
R. Cingolani, W. Stolz, Y. H. Zhang, K. Ploog
Journal of Luminescence 46 (2) (1990), pp. 147 - 154
Dopant incorporation in delta-doped GaAs layers studied by local vibrational-mode spectroscopy
W. Stolz, M. Hauser, K. Ploog, M. Ramsteiner, J. Wagner
Proc. Int. Symp. "Gallium Arsenide and Related Compounds", Bristol (1989)
Inst. Phys. Conf. Ser. 106 (1990), pp. 465 - 470
1989
Transient reshaping of intersubband absorption spectra due to hot electrons in a modulation-doped multiple-quantum-well structure
R. J. Bäuerle, T. Elsässer, H. Lobentanzer, W. Stolz, and K. Ploog
Phys. Rev. B 40 (14) (1989), pp. 10002 - 10005
Influence of interface quality on structural and optical properties of GaxIn1-xAs/AlyIn1-yAs superlattices lattice matched to (001) InP
L. Tapfer, W. Stolz, and K. Ploog
J. Appl. Phys. 66 (7) (1989), pp. 3217 - 3219
Hot carriers in (GaIn)As/(AlIn)As multiple quantum well structures studied by picoseceond infrared spectroscopy
T. Elsässer, R. J. Bäuerle, W. Kaiser, H. Lobentanzer, W. Stolz, K. Ploog
Conf. "Quantum Electronics and Laser Science", Techn. Digest Ser. 12, Optical Society of America, Washington (1989), p. 142
Screening of the n=2 excitonic resonance by hot carriers in an undoped Ga0.47In0.53As/Al0.48In0.52As multiple quantum well structure
H. Lobentanzer, W. Stolz, K. Ploog, R. J. Bäuerle, T. Elsässer
Solid-State Electronics 32 (12) (1989), pp. 1875 - 1879
Transient intersubband absorption spectra of hot electrons in a modulation-doped multiple-quantum-well structure
T. Elsässer, R. J. Bäuerle, W. Kaiser, H. Lobentanzer, W. Stolz, K. Ploog
Solid-State Electronics 32 (12) (1989), pp. 1707 - 1711
Incorporation of Si in δ-doped GaAs studied by local vibrational mode spectroscopy
J. Wagner, M. Ramsteiner, W. Stolz, M. Hauser, and K. Ploog
Appl. Phys. Lett. 55 (10) (1989), pp. 978 - 980
Electronic states and optical transitions in modulation-doped n-type GaxIn1-xAs/AlxIn1-xAs multiple quantum wells
R. Cingolani, W. Stolz, and K. Ploog
Phys. Rev. B 40 (5) (1989), pp. 2950 - 2955
Infrared stimulated emission in modulation doped Ga0.47In0.53As/Al0.48In0.52As quantum wells
R. Cingolani, W. Stolz, K. Ploog, M. Ferrera, C. Moro
Solid State Communications 72 (8) (1989), pp. 807 - 811
Transient absorption spectra of a modulation-doped Ga0.47In0.53As/Al0.48In0.52As multiple quantum well structure measured by picosecond infrared pulses
T. Elsässer, R. J. Bäuerle, W. Kaiser, H. Lobentanzer, W. Stolz, and K. Ploog
Appl. Phys. Lett 54 (3) (1989), pp. 256 - 258
Cooling of hot carriers in three- and two-dimensional Ga0.47In0.53As
H. Lobentanzer, W. Stolz, J. Nagle, and K. Ploog
Phys. Rev. B 39 (8) (1989), pp. 5234 - 5244
Optimized growth start and controlled formation of misfit dislocations for heteroepitaxial GaAs on (100) Si grown by migration-enhanced epitaxy
W. Stolz, Y. Horikoshi, M. Naganuma, K. Nozawa
Journal of Crystal Growth 95 (1 - 4) (1989), pp. 87 - 90
1988
Picosecond infrared spectroscopy of hot carriers in a modulation-doped (GaIn)As/(AlIn)As multiple quantum well structure
T. Elsässer, R. J. Bäuerle, W. Kaiser, H. Lobentanzer, W. Stolz, K. Ploog
Proc. 19th Int. Conf. "Physics of Semiconductors", Warsaw (1988), Ed. W. Zawadzki, p. 227
Picosecond infrared spectroscopy of hot carriers in a (GaIn)As multiple quantum well structure
T. Elsässer, R. J. Bäuerle, W. Kaiser, H. Lobentanzer, W. Stolz, K. Ploog
Proc. 16th Int. Conf. "Quantum Electronics", Tokyo (1988), p. 388
Carrier cooling in modulation-doped (GaIn)As/(AlIn)As multiple quantum well structures
H. Lobentanzer, W. Stolz, J. Nagle, K. Ploog
Proc. 16th Int. Conf. "Quantum Electronics", Tokyo (1988)
Saturation and blue shift of the exciton resonance in a thin (GaIn)As/(AlIn)As multiple quantum well structure
H. Lobentanzer, W. Stolz, K. Ploog
Proc. 16th Int. Conf. "Quantum Electronics", Tokyo (1988)
Cooling of hot carriers in three- and two-dimensional (GaIn)As
H. Lobentanzer, W. Stolz, K. Ploog
Proc. 6th Int. Conf. "Ultrafast Phenomena", Kyoto (1988), Eds. T. Yajima, K. Yoshihara, C. B. Harris, S. Shionoya,
Springer-Series in Chemical Physics Bd. 48 Berlin (1988)
Intersubband absorption in a modulation-doped Ga0.47In0.53As/Al0.48In0.52As multiple quantum well structure
H. Lobentanzer, W. König, W. Stolz, K. Ploog, T. Elsässer, and R. J. Bäuerle
Appl. Phys. Lett. 53 (7) (1988), pp. 571 - 573
Picosecond infrared spectroscopy of hot carriers in a modulation-doped Ga0.47In0.53As multiple-quantum-well structure
R. J. Bäuerle, T. Elsässer, W. Kaiser, H. Lobentanzer, W. Stolz, and K. Ploog
Phys. Rev. B 38 (6) (1988), pp. 4307 - 4310
Strain-released heteroexpitaxy of GaAs on (100) Si by migration enhanced epitaxy
W. Stolz, Y. Horikoshi, M. Naganuma, K. Nozawa
Workshop "Electronic Materials and Devices", Nagoya (1988)
Controlled Formation of Misfit Dislocations for Heteroepitaxial Growth of GaAs on (100) Si by Migration-Enhanced Epitaxy
W. Stolz, Y. Horikoshi and M. Naganuma
Jpn. J. Appl. Phys. 27 Part 2 (6) (1988), L1140 - L1143
Initial Growth Conditions of GaAs on (100) Si Grown by Migration-Enhanced Epitaxy
W. Stolz, M. Naganuma and Y. Horikoshi
Jpn. J. Appl. Phys. 27 Part 2 (3) (1988), L283 - L286
Sharp photoluminescence of GaAs/(AlGa)As SQW grown on Si substrate by migration-enhanced epitaxy
M. Naganuma, W. Stolz, Y. Horikoshi
Proc. 19th Conf. "Solid State Devices and Materials", Tokyo (1987),
Japan Society of Applied Physics, Tokyo (1987), p. 513
Optical and structural properties of GaAs grown on (100) Si by molecular-beam epitaxy
W. Stolz, F. E. G. Guimaraes, and K. Ploog
J. Appl. Phys. 63 (2) (1988), pp. 492 - 499
1987
Position and character (Ɖ or x) of energy states in short-period (GaAs)m(AlAs)n superlattices
J. Nagle, M. Garriga, W. Stolz, T. Isu et K. Ploog
Proc. 3rd Int. Conf. "Modulated Semiconductor Structures", Montpellier (1987),
Journal de Physique Colloques 48 (5C) (1987), pp. 495 - 498
Effect of barrier configuration and interface qualtiy on structural and electronic properties of MBE grown (AlGa)As/GaAs, (AlGa)Sb/GaSb and (AlIn)As/(GaIn)As superlattices
K. Ploog, W. Stolz, L. Tapfer
Proc. NATO Adv. Res. Workshop "Thin Film Growth Techniques",
Eds. R. F. C. Farrow, S. S. P. Parkin, P. J. Dobson, J. H. Neave, A. S. Arrott, Brighton (1986), Plenum Press (New York, London), ISBN 0-306-42686-2
NATO ASI Series B 163 (1987)
Absorption spectroscopy on Ga0.47In0.53As/Al0.48LIn0.52As multi-quantum-well heterostructures,
II. Subband structure
W. Stolz, J. C. Maan, M. Altarelli, L. Tapfer, and K. Ploog
Phys. Rev. B 36 (8) (1987), pp. 4310 - 4315
Absorption spectroscopy on Ga0.47In0.53As/Al0.48LIn0.52As multi-quantum-well heterostructures,
I. Excitonic transitions
W. Stolz, J. C. Maan, M. Altarelli, L. Tapfer, and K. Ploog
Phys. Rev. B 36 (8) (1987), pp. 4301 - 4309
Cooling of photoexcited carriers in a (GaIn)As multiple quantum well
H. Lobentanzer, H.-J. Polland, W. W. Rühle, W. Stolz, K. Ploog
Int. Conf. "Quantum Electronics" (1987), Opt. Soc. Am.
Carrier cooling in undoped and modulation-doped Ga0.47In0.53As multiple quantum wells
H. Lobentanzer, W. W. Rühle, H.-J. Polland, W. Stolz, and K. Ploog
Phys. Rev. B 36 (5) (1987), pp. 2954 - 2957
Cooling of hot carriers in Ga0.47In0.53As
H. Lobentanzer, H.-J. Polland, W. W. Rühle, W. Stolz, and K. Ploog
Appl. Phys. Lett. 51 (9) (1987), pp. 673 - 675
Cooling of an electron-hole plasma in a Ga0.47In0.53As multiple-quantum-well structure
H. Lobentanzer, H.-J. Polland, W. W. Rühle, W. Stolz, and K. Ploog
Phys. Rev. B 36 (2) (1987), pp. 1136 - 1139
Hot-carrier-phonon interaction in three- and two-dimensional Ga0.47In0.53As
H. Lobentanzer, W. W. Rühle, W. Stolz, K. Ploog
Solid State Communications 62 (1) (1987), pp. 53 - 56
Effect of barrier configuration on excitonic recombination in Ga0.47In0.53As/Al0.48In0.52As multi quantum well structure
W. Stolz, J. Wagner, K. Ploog
Journal of Crystal Growth 81 (1 - 4) (1987), pp. 79 - 84
1986
Structural characterization of (GaIn)As/(AlIn)As superlattices grown by molecular beam epitaxy
L. Tapfer, W. Stolz, K. Ploog
Proc. 18th Int. Conf. "Solid State Devices and Materials" Tokyo (1986)
Japan Society Applied Physics (1986), p. 603
Effect of barrier configuration on excitonic recombination in Ga.47In.53As/Al.48In.52As multi quantum well structures
J. Wagner, W. Stolz, J. Knecht, K. Ploog
Solid State Communications 57 (10) (1986), pp. 781 - 784
Excitonic transitions in quantum wells composed of either binary or ternary III-V semiconductors grown by molecular beam epitaxy
J. L. de Miguel, Y. Ohmori, W. Stolz, L. Tapfer, K. Ploog, J. Wagner
Proc. 12th Int. Symp. "GaAs and Related Compounds" Karuizawa (1985),
Inst. Phys. Conf. Ser. 79 (1986), pp. 457 - 462
High-resolution double-crystal X-ray diffraction for improved assessment of modulated semiconductor structures
L. Tapfer, W. Stolz, A. Fischer, K. Ploog
Surface Science 174 (1 - 3) (1986), pp. 88 - 93
1985
Luminescence excitation spectroscopy on Ga0.47In0.53As/Al0.48In0.52As quantum-well heterostructures
J. Wagner, W. Stolz, and K. Ploog
Phys. Rev. B 32 (6) (1985), pp. 4214 - 4216
Optical and Structural Properties of Molecular Beam Epitaxial Grown Ga0.47In0.53As/Al0.48In0.52As Superlattices Emitting at 1.55 µm at Room Temperature
W. Stolz, L. Tapfer, A. Breitschwerdt, and K. Ploog
Appl. Phys. A 38 (2) (1985), pp. 97 - 102
Free-exciton luminescence in GaSb quantum wells confined by short-period AlSb-GaSb superlattices
K. Ploog, Y. Ohmori, H. Okamoto, W. Stolz, and J. Wagner
Appl. Phys. Lett. 47 (4) (1985), pp. 384 - 386
Influence of growth conditions on the optical and structural properties of (GaIn)As/(AlIn)As superlattices grown by molecular beam epitaxy
W. Stolz, L. Tapfer, K. Ploog
Proc. Eur. Materials Research Society Symp. Strasbourg (1985)
J. de Phys. Suppl. (1985), p. 219
Luminescence of (GaIn)As/(AlIn)As quantum well heterostructures grown by molecular beam epitaxy
W. Stolz, K. Fujiwara, L. Tapfer, H. Oppolzer, K. Ploog
Proc. 11th Int. Symp. "GaAs and Related Compounds" Biarritz (1984),
Inst. Phys. Conf. Ser. 74 (1985), p. 139
1982
Impurity diffusion in amorphous silicon and its implications for solar cells
S. Kalbitzer, M. Reinelt, W. Stolz
Proc. 4th Int. Conf. "Photovoltaic Solar Energy" Stresa (1982)
Dordrecht, D. Reidel Publishing Co., 1982, pp. 1059 - 1062
