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SUMMARY:Molecular beam epitaxy growth of InAsSbBi on GaSb for mid infrared
  applications
DTSTART;TZID=Europe/Berlin:20190719T141500
DTSTAMP:20260519T084635Z
UID:897bed10128b4273a546b28ecbd7e55d@www.uni-marburg.de
CREATED:20190716T091522Z
DESCRIPTION:https://www.uni-marburg.de/en/grk1782/news/events/events-2019/
 molecular-beam-epitaxy-growth-of-inassbbi-on-gasb-for-mid-infrared-applica
 tions\nDr. Shane Johnson\, Arizona State University\, Phoenix/AZ\, USA
LAST-MODIFIED:20200402T101341Z
LOCATION:Department of Physics\, Renthof 5\, small lecture hall
URL:https://www.uni-marburg.de/en/grk1782/news/events/events-2019/molecula
 r-beam-epitaxy-growth-of-inassbbi-on-gasb-for-mid-infrared-applications
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DTSTART:20190331T030000
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TZOFFSETFROM:+0100
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