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Dürr (A8)
Prof. Dr. Michael Dürr

Justus-Liebig Universität Gießen
Institute of Applied Physics
Heinrich-Buff-Ring 16, 35392 Gießen

Phone: +49 641 99-33490
Email: michael.duerr@ap.physik.uni-giessen.de

Position: Professor (W2)
Expertise: Experimental physics; reaction dynamics on semiconductor surfaces, scanning tunneling microscopy; cluster-surface dynamics and application in mass spectrometry

Project A8: Organic Molecular Building Blocks for the Synthesis of Internal Interfaces


University Education

2000 Doctoral degree in Physics, TU München, Dissertation on "Reaction dynamics of hydrogen on silicon surfaces investigated by means of optical second harmonic generation, molecular beam techniques, and scanning tunneling microscopy", thesis advisor: Prof. U. Höfer
1997 Diploma degree in Physics, TU München, supervisor: Prof. U. Höfer
1992-97 Studies in Physics, Universität Stuttgart and Technische Universität (TU) München


Professional Experience

2013- Professor (W2) for Cluster Surface Dynamics and Scanning Tunneling Microscopy, Institute of Applied Physics, Justus Liebig University Giessen
2006-13 Professor (W2) for Surface and Nano Chemistry, Hochschule Esslingen
2006 Visiting Scientist at Sony Materials Laboratories, Atsugi, Japan (3 months)
2002-06 Scientist/Senior Scientist at Materials Science Laboratories, Sony Dtl., Stuttgart
2000-02 Postdoc, Philipps-Universität Marburg (Prof. U. Höfer)
1999 Visiting Scientist, Physics Department, Columbia University New York, NY, USA (9 months, Prof. T. F. Heinz)
1997-98 Research Assistant, MPI for Quantum Optics, Garching (Prof. K.-L. Kompa, Prof. U. Höfer)


Honours, Awards and other Proofs of Qualification

2012 Visiting professor at Peking University, State Key Laboratory for Artificial Microstructure & Mesoscopic Physics, Beijing, China
2006 Sony Deutschland Patent Award, Sony Deutschland
2006 Sony Materials Laboratories Science Award, Sony Japan
1999 DAAD grant for studying abroad


Selected Publications

  1. M. Dürr, A. Biedermann, Z. Hu, U. Höfer, T. F. Heinz Probing high-barrier pathways of surface reactions by scanning tunneling microscopy Science 296, 1838 (2002).
  2. M. Dürr, A. Schmid, M. Obermaier, S. Rosselli, A. Yasuda, G. Nelles Low-temperature fabrication of dye-sensitized solar cells by transfer of composite porous layers Nature Mater. 4, 607 (2005).
  3. M. Dürr, U. Höfer Dissociative adsorption of molecular hydrogen on silicon surfaces Surf. Sci. Rep. 61, 465 (2006).
  4. R. Gebhardt, A. Tomsic, H. Schröder, M. Dürr, K.L. Kompa Matrix-free formation of gas-phase biomolecular ions by soft cluster-induced desorption Angew. Chem. Int. Ed. 48, 4162 (2009).
  5. B. Hipp, I. Kunert, M. DürrSystematic control of hydrophobic and superhydrophobic properties using double-rough structures based on mixtures of metal-oxide nanoparticles Langmuir 26, 6557 (2010).
  6. M. Dürr, U. Höfer Hydrogen diffusion on silicon surfaces Progr. Surf. Sci. 88, 61 (2013).
  7. M. Baur, C. R. Gebhardt, M. Dürr Desorption/ionization induced by neutral cluster impact as a soft and efficient ionization source for ion trap mass spectrometry of biomolecules Rapid Commun. Mass Spectrom. 28, 290 (2014).
  8. B.-J. Lee, C.R. Gebhardt, H. Schröder, K.L. Kompa, M. Dürr Observation of ionic desorption channels in cluster-induced desorption of alkali halides – Influence of surface electronic properties and surface configuration Chem. Phys. Lett. 556, 77 (2013).
  9. M. Reutzel, M. Lipponer, M. Dürr, U. Höfer Binding energy and dissociation Barrier – experimental determination of the key parameters of the potential energy curve of diethyl ether on Si(001) J. Phys. Chem. Lett. 6, 3971 (2015).
  10. A. Portz, M. Baur, C. R. Gebhardt, M. DürrMass spectrometry of oligopeptides in the presence of large amountsof alkali halides using desorption/ionization induced by neutral cluster impact Biointerphases 11, 02A316 (2016).

Patents

  1. M. Dürr, A. Schmid, G. Nelles, A. Yasuda, Method of producing a porous semiconductor film on a substrate (US 7935263 B2 (2011)).
  2. M. Dürr, G. Nelles, A. Yasuda, Y. Suzuki, K. Noda, M. Morooka, Photovoltaic cell (US 8193443 B2 (2012)).
  3. M. Dürr, A. Schmid, G. Nelles, A. Yasuda, Porous semiconductor film on a substrate (US 8319098 B2 (2012)).
  4. M. Dürr, G. Nelles, A. Yasuda, Photovoltaic device containing carbon nanotubes and at least one organic hole conductor (US 8258500 B2 (2012)).
  5. M. Dürr, C.R. Gebhardt, Ion generation in mass spectrometers by cluster bombardment (DE 102012008259 B4 (2013)).
  6. M. Dürr, S. Rosselli, G. Nelles, A. Yasuda, Method of optimizing the band edge positions of the conduction band and the valence band of a semiconductor material for use in photoactive devices (US 8889467 B2 (2014)).

Zuletzt aktualisiert: 16.03.2018 · armbrusn

 
 
 
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