Direkt zum Inhalt
 
 
emotio_sfb_1083.jpg
 
  Startseite  
 
Sie sind hier:» Universität » SFB 1083 » Members » Stolz (A1, B7)

Dr. Wolfgang Stolz
Prof. Dr. Wolfgang Stolz

Philipps-Universität Marburg
Material Sciences Center and Department of Physics
Structure and Technology Research Laboratory
Hans-Meerwein-Str., 35032 Marburg

Phone: +49 6421 28-25696
E-mail: wolfgang.stolz@physik.uni-marburg.de
www: http://www.uni-marburg.de/wzmw/strl

Position: Professor (W3)
Expertise: Experimental physics, epitaxial growth of III/V compound semiconductor hetero- and nanostructures and their structural, electrical and optoelectronic properties, semiconductor technology, optoelectronic device applications

Project A1: Metal Organic Vapour Phase Epitaxy of Semiconductor Heterostructures and Interfaces

Project B7: Interface-Dominated Semiconductor Laser Structures


University Education

1994 Habilitation (Dr. rer. nat. habil.) in Experimental Physics, “Materials science aspects and physical properties of novel III/V-semiconductor heterostructures”, U Marburg
1986 Doctoral degree in Physics (Dr. rer. nat.), U Stuttgart, Dissertation MPI Solid State Research Stuttgart, “Molecular beam epitaxy and optical properties of (GaIn)As/(AlIn)As-quantum well heterostructures”, thesis advisor: Prof. K. H. Ploog
1982 Diploma degree in Physics (Dipl. Phys.), U Heidelberg, MPI Nuclear Physics Heidelberg, „Diffusion of interstitial impurities in amorphous silicon“, supervisor: Dr. S. Kalbitzer
1978-1982 Studies in Physics, TU Karlsruhe and U Heidelberg


Professional Experience

2017- Full professor (W3), Dept. Physics and Material Sciences Center, U Marburg
2009- Head (jointly with Prof. K. Volz) Structure and Technology Research Laboratory, Material Sciences Center, U Marburg
2007-2012 Coordinator BMBF-Joint Research Program “Monolithic integration of Ga(NAsP)-based laser structures on Si-substrate (MonoLaSi)”
2007- Adjunct professor, Optical Sciences Center, U Arizona, Tucson USA
2004 Co-founder of NAsP III/V GmbH, Marburg
2002-2009 Speaker DFG-Topical Research Group “Metastable compound semiconductors and heterostructures”
1999- Independent technology consultant
1993 Co-founder of sgs Mochem GmbH, Marburg
1989-2009 Research group leader, Material Sciences Center and Department of Physics, U Marburg
1988-1989 Research Assistant, MPI Solid State Research Stuttgart (Prof. K. H. Ploog)
1987-1988 Guest Scientist, NTT Basic Research Laboratories, Tokyo, Japan, Semiconductor heterostructures (Dr. Y. Horikoshi)
1983-1987 Research Assistant, MPI Solid State Research Stuttgart (Prof. K. H. Ploog)


Honours, Awards and other Proofs of Qualification

2003 Prize of the German Society of Crystal Growth (DGKK)
1995 Karl-Heinz-Beckurts-Prize (Technology transfer prize of the Federal Ministry of Research and Technology)
1992 Distinguished Scientific Achievement Award (Nippon Telegraph and Telephone Corp., NTT Basic Research Laboratory, Tokyo, Japan)
1976 Mangelsdorff-Prize


Selected Publications

  1. G. Bernatz, S. Nau, R. Rettig, H. Jänsch, W. Stolz Experimental investigations of structures of interior interfaces in GaAs J. Appl. Phys. 86, 6752 (1999).
  2. F. Höhnsdorf, J. Koch, S. Leu, W. Stolz, B. Borchert, M. Druminski Reduced threshold current densities of (GaIn)(NAs) single quantum well lasers for the emission in the range of 1,28-1,38 µm Electron. Lett. 35, 571 (1999).
  3. P. J. Klar, H. Grüning, J. Koch, S. Schäfer, K. Volz, W. Stolz, W. Heimbrodt, A. M. Kamal Saadi, A. Lindsay, E. P. O´Reilly (GaIn)(NAs)-fine structure of the band gap due to the nearest neighbour configurations of the isovalent nitrogen Phys. Rev. B 64, 121203 (2001).
  4. B. Kunert, K. Volz, J. Koch, W. Stolz Direct band gap Ga(NAsP)-material system pseudomorphically grown on GaP-substrate Appl. Phys. Lett. 88, 182108 (2006).
  5. K. Volz, A. Beyer, W. Witte, J. Ohlmann, I. Nemeth, B. Kunert, W. Stolz GaP-nucleation on exact (001) Si substrates for III/V-device integration J. Cryst. Growth 315, 37 (2011).
  6. C. Möller, C. Fuchs, C. Berger, A. Ruiz Perez, M. Koch, J. Hader, J.V. Moloney, S.W. Koch, W. Stolz Type-II-VECSEL with Watt level output powers at 1.2 µm Appl. Phys. Lett. 108, 071102 (2016).

Patents

  1. H. Lobentanzer, W. Stolz, K. Ploog, J. Nagle, Light emitting compositional semiconductor device (US-Patent No. 5,057,881 (1991)).
  2. W. Stolz, S. Lutgen, Verfahren zur Herstellung von Halbleiterschichtfolgen für optisch gepumpte Halbleitervorrichtung (EP 1 700 363 B1 (2004)).
  3. B. Kunert, J. Koch, S. Reinhard, K. Volz, W. Stolz, III/V-Halbleiter (102005004582.0 (2005)).
  4. K. Reuter, J. Sundermeyer, A. Merkoulov, W. Stolz, K. Volz, M. Pokoj, T. Ochs, Tantal- und Niob-Verbindungen und ihre Verwendung in der Chemical Vapour Deposition (US 7,442407 B2 (2005)).

Zuletzt aktualisiert: 15.03.2018 · armbrusn

 
 
 
Philipps-Universität Marburg

Sonderforschungsbereich 1083, Philipps-Universität Marburg, Renthof 5, 35032 Marburg, Germany
Tel. +49 6421 28-24223, Fax +49 6421 28-24218, E-Mail: info@uni-marburg.de

URL dieser Seite: https://www.uni-marburg.de/sfb1083/members/stolz

Impressum | Datenschutz