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Prof. Dr. Kerstin Volz

Prof. Dr. Kerstin Volz

Philipps-Universität Marburg
Department of Physics
Renthof 5, 35032 Marburg


Materials Science Center (WZMW)
Structure and Technology Laboratory (STRL)
Hans-Meerwein Straße, 35032 Marburg

Phone: +49 6421 28-22297 (Renthof)
          +49 6421 28-22297 (Lahnberge)
E-mail: kerstin.volz@physik.uni-marburg.de
www: http://www.uni-marburg.de/wzmw/strl

Position: Professor (W3)
Expertise: Experimental Physics, structural characterization, transmission electron microscopy, epitaxial growth of semiconductor structures, correlation of structural optical and growth characteristics of functional materials

Project A5: Atomically Resolved Structure of Solid/Solid Interfaces

University Education

Habilitation (Dr. rer. nat. habil.) in Experimental Physics, Philipps-Universität Marburg, „ Novel III/V semiconductor structures: from heteroepitaxial growth to quantitative nanoscale analysis “
1999 Doctoral degree in Physics (Dr. rer. nat.), Universität Augsburg / GSI Darmstadt / Philipps-Universität Marburg, Dissertation on “Composition and structure of SiC films formed by ion implantation techniques”, thesis advisor: Prof. W. Ensinger
1996 Diploma degree in Physics (Dipl. Phys.), U Augsburg, supervisor: Prof. B. Stritzker
1990-1996 Studies in Physics, Universität Augsburg

Professional Experience

2015- Managing director of the WZMW
2013- Vice Speaker of the Collaborative Research Center (Sonderforschungsbereich) "Structure and Dynamics of Internal Interfaces" (SFB 1083)
2012- Speaker of the Research Training Group (Graduiertenkolleg) "Funktionalisierung von Halbleitern" (GRK 1782)
2010- Heisenberg-Professor (W3) for Experimental Physics, Philipps-Universität Marburg
2009- co-head (together with Dr. W. Stolz) of Structure and Technology Research Laboratory (STRL) of the WZMW, Philipps-Universität
2009-2010 Heisenberg-Professor (W2) for Experimental Physics, Philipps-Universität Marburg
2008-2009 Guest professor Institute of Physics, Humboldt Universität zu Berlin
2003-2008 DFG-Junior Research group leader, WZMW, Philipps-Universität Marburg
2002 Guest scientist Stanford University (USA) (Prof. J. S. Harris): Feodor Lynen scholarship
1997-00 Several research stays at Osaka National Research Laboratory, Japan

Honours, Awards and other Proofs of Qualification

2016- Member of the MRS medal selection committee
2016 Call for a chair (W3) "Advanced Materials" Eberhard Karls Universität Tübingen in personal union with head of the Nanoanalytics Center, NMI, Reutlingen, declined
2010 Call for a chair (W3) "Angew. Physik – Halbleitermaterialien" TU Freiberg, declined
2010 Member at "Internetportal für exzellente Wissenschaftlerinnen" by Robert-Bosch Foundation and Spektrum-Verlag (upon recommendation by DFG)
2009 Patricia Pahamy teaching award, faculty of physics, Philipps-Universität Marburg
2008 Heisenberg professorship of DFG
2001 Feodor Lynen scholarship of Alexander von Humboldt Stiftung
1996 Graduate Student Award of EMRS

Selected Publications

  1. P. J. Klar, H. Grüning, J. Koch, S. Schäfer, K. Volz, W. Stolz, W. Heimbrodt, A. M. Kamal Saadi, A. Lindsay, E. P. O´Reillly (GaIn)(NAs)-fine structure of the band gap due to nearest neighbour configurations of the isovalent nitrogen Phys. Rev. B 64, 121203 (2001).
  2. B. Kunert, K. Volz, J. Koch, W. Stolz Direct band gap Ga(NAsP)-material system pseudomorphically grown on GaP-substrate Appl. Phys. Lett. 88, 182108 (2006).
  3. O. Rubel, I. Nemeth, W. Stolz, K. Volz, Modelling the compositional dependence of electron diffraction in GaAs- and GaP-based compound semiconductors Phys. Rev. B 78, 075207 (2008).
  4. I. Németh, B. Kunert, W. Stolz, K. Volz Heteroepitaxy of GaP on Si: Correlation of morphology, anti-phase-domain structure and MOVPE growth conditions J. Cryst. Growth 310 (7-9), 1595 (2008).
  5. K. Volz, D. Lackner, I. Németh, B. Kunert, W. Stolz, C. Baur, F. Dimroth, A. W. Bett Optimization of annealing conditions of (GaIn)(NAs) for solar cell applications J. Cryst. Growth 310 (7-9), 2222 (2008).
  6. K. Volz, A. Beyer, W. Witte, J. Ohlmann, I. Németh, B. Kunert, W. Stolz GaP-nucleation on exact (001) Si substrates for III/V-device integration J. Cryst. Growth 315, 37 (2011).
  7. P. Ludewig, N. Knaub, N. Hossein, S. Reinhard, L. Nattermann, I. P. Marko, S. R. Jin, K. Hild, S. Chatterjee, W. Stolz, S. J. Sweeney, K. Volz Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser Appl. Phys. Lett. 102 (24), 242115 (2013).
  8. A. Beyer, A. Stegmüller, J. O. Oelerich, K. Jandieri, K. Werner, G. Mette, W. Stolz, Baranovskii, R. Tonner, K. Volz Pyramidal structure formation at the interface between III/V semiconductors and silicon Chem. Mater. 28 (10), 3265-75 (2016).
  9. A. Beyer, J. Belz, N. Knaub, K. Jandieri, K. Volz Influence of spatial and temporal coherences on atomic resolution high angle annular dark field imaging J. Ultramic. 169, 1-10 (2016).


  1. K. Reuter, J. Sundermeyer, A. Merkulov, W. Stolz, K. Volz, M. Pokoj, Th. Ochs, Tantalund Niob-Verbindungen und ihre Verwendung in der Chemical Vapour Deposition, (DE102005033102A1 & US2007/0042213A1 (2007)).
  2. K. Reuter, J. Sundermeyer, A. Merkulov, W. Stolz, K. Volz, M. Pokoj, Th. Ochs, Wolfram und Molybdän-Verbindungen und ihre Verwendung in der Chemical Vapour Deposition, (DE102006000823A1 & US 2007/0160761 A1 (2007)).
  3. B. Kunert, J. Koch, S. Reinhard, K. Volz, W. Stolz, III/V-Halbleiter (102005004582.0 (2005)).
  4. C. v. Hänisch, B. Ringler, E. Sterzer, A. Beyer, W. Stolz, K. Volz, Verwendung wenigstens einer binären Gruppe 15-Elementverbindung, eine 13/15-Halbleiterschicht und binäre Gruppe 15-Elementverbindungen (DE 10 2014 014 036.9 (2015)).

Zuletzt aktualisiert: 15.03.2018 · armbrusn

Philipps-Universität Marburg

Sonderforschungsbereich 1083, Philipps-Universität Marburg, Renthof 5, 35032 Marburg, Germany
Tel. +49 6421 28-24223, Fax +49 6421 28-24218, E-Mail: info@uni-marburg.de

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