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Project A5: Atomically Resolved Structure of Solid/Solid Interfaces

Principle Investigators: Prof. Dr. Kerstin Volz (Marburg, WZMW)

Summary

a5_logo.pngThis project targets the determination of the atomically resolved structure and composition across buried interfaces applying transmission electron microscopy (TEM). Mainly Cs-corrected techniques will be used in combination with techniques that exploit inelastic signals. For the different interface formation processes and expected structures, several model systems will be studied, which will be chosen in close cooperation with the groups synthesizing materials.
Polar/non-polar as well as strained/lattice-matched interfaces in semiconductor heterostructures will be a thematic priority. GaP/Si as well as GaAs/Ge is chosen as a nearly lattice-matched system to study the influence of different crystal polarity on the interface formation mechanism. Using interfaces in the (GaIn)(NAsSb) heterostructure system, this knowledge can be correlated with the influence of strain as well as with the influence of metastability of material systems on the interface structure between two inorganic semiconductors. Our knowledge on TEM of radiation-sensitive organic samples will be developed further to image composite structures of layered with organic materials.
Electron scattering and diffraction will be theoretically described with a special focus on the achievable resolution at buried interfaces, taking into account thermally diffuse scattering as well as TEM specimen relaxation, using realistic crystal models, which are calculated by valence force field and density functional theory, as input parameters. The study of different model material systems will allow for a detailed understanding of different electron-matter interaction at interfaces of hybrid materials. From these data a quantitative understanding of the atomic arrangement at interfaces will be derived. This quantified interface structure is a prerequisite for the correlation to growth as well as to the optoelectronic properties of the studied materials.

Project-Related Publications

  1. H. Han, A. Beyer, K. Jandieri, K. I. Gries, L. Duschek, W. Stolz, K. Volz Quantitative characterization of the interface roughness of (GaIn)As quantum wells by high resolution STEM Micron 79, 1 (2015).
  2. K. I. Gries, K. Werner, A. Beyer, W. Stolz, K. Volz FIB Plan View Preparation and Electron Tomography of Ga-Containing Droplets Induced by Melt-Back Etching in Si Microsc. Microanal. 22 (1), 131 (2016).
  3. A. Beyer, A. Stegmüller, J. O. Oelerich, K. Jandieri, K. Werner, G. Mette, W. Stolz, Baranovskii, R. Tonner, K. Volz Pyramidal structure formation at the interface between III/V semiconductors and silicon Chem. Mater. 28 (10), 3265 (2016).
  4. A. Beyer, J. Belz, N. Knaub, K. Jandieri, K. Volz Influence of spatial and temporal coherences on atomic resolution high angle annular dark field imaging J. Ultramic. 169, 1-10 (2016).

Zuletzt aktualisiert: 16.03.2018 · armbrusn

 
 
 
Philipps-Universität Marburg

Sonderforschungsbereich 1083, Philipps-Universität Marburg, Renthof 5, 35032 Marburg, Germany
Tel. +49 6421 28-24223, Fax +49 6421 28-24218, E-Mail: info@uni-marburg.de

URL dieser Seite: https://www.uni-marburg.de/sfb1083/projects/A5

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