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Project B5: Time-Resolved Nonlinear Optical Spectroscopy at Semiconductor Interfaces

Principle Investigator: Prof. Dr. Ulrich Höfer, Dr. Gerson Mette (Marburg, Dept. of Physics)

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Summary

Time-resolved nonlinear optical spectroscopies are employed to obtain interface-specific information about electronic structure, vibrational excitations and ultrafast dynamics of charge-transfer processes at semiconductor interfaces. Ongoing studies of GaP/Si(001) as a model for an interface between a polar and a nonpolar inorganic semiconductor will be continued and extended to GaAs/Ge(001). Build-up and decay of transient electric fields following optical excitation at buried interfaces is investigated with optical second-harmonic generation (SHG). Coherent phonon and plasmon dynamics of the systems are studied together with the groups of Petek (University of Pittsburgh/USA) and Ishioka (NIMS, Tsukuba/Japan) as associated partners of this CRC. A new SHG microscopy setup allows to time-resolve charge-transfer processes at interfaces between two-dimensional semiconductors, particularly as a function of their stacking angle. Finally, the dynamics of charge injection from organic thin films into silicon will be studied for well-defined interfaces based on functionalized cyclooctynes.

Project-Related Publications

  1. A. Beyer, A. Stegmüller, J. O. Oelerich, K. Jandieri, K. Werner, G. Mette, W. Stolz, S. D. Baranovskii, R. Tonner, K. Volz Pyramidal structure formation at the interface between III/V semiconductors and silicon Chem. Mater. 28, 3265 (2016).
  2. J. Zimmermann, G. Mette, U. Höfer Second-harmonic imaging microscopy for time-resolved investigations on transition metal dichalcogenides arXiv (2016) arXiv:1608.03434.
  3. M. Reutzel, N. Münster, M. A. Lipponer, C. Länger, U. Höfer, U. Koert, M. Dürr Chemoselective reactivity of bifunctional cyclooctynes on Si(001) J. Phys. Chem. C 120, 46 (2016).
  4. K. Ishioka, A. Rustagi, A. Beyer, W. Stolz, K. Volz, U. Höfer, H. Petek, C. J. Stanton Sub-picosecond acoustic pulses at buried GaP/Si interfaces Appl. Phys. Lett. 111, 062105 (2017).

Zuletzt aktualisiert: 16.03.2018 · armbrusn

 
 
 
Philipps-Universität Marburg

Sonderforschungsbereich 1083, Philipps-Universität Marburg, Renthof 5, 35032 Marburg, Germany
Tel. +49 6421 28-24223, Fax +49 6421 28-24218, E-Mail: info@uni-marburg.de

URL dieser Seite: https://www.uni-marburg.de/sfb1083/projects/B5

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