Project B7: Interface-Dominated Semiconductor Laser Structures
Principle Investigators: Dr. Wolfgang Stolz, Prof. Dr. Stephan W. Koch (Marburg, WZMW & Dept. of Physics)
Summary
This project is dedicated to the design, growth,
characterization, and analysis of novel interface-dominated
semiconductor laser structures with spatially indirect barrier/quantum
well combinations. This type-II band alignment allows for added
flexibility in choosing the emission wave-length and the minimization
of the intrinsic losses while maintaining good gain properties.
The first realization and analysis of optimized edge-emitting as well
as surface-emitting type-II-laser structures for an emission wavelength
around 1.2 μm have verified the anticipated high values of material
gain and differential efficiency. At present, the activities are
concentrating on type-II-designs for the emission wavelength ranges
1.25 μm to 1.35 μm as well as 1.5 μm to 1.65 μm. Based on the gained
experience with the modelling, growth, characterization, and
optimization of the relatively complicated type-II heterostructures,
the main goal will be to realize systems with comparable gain but
reduced intrinsic losses in comparison to the more established
direct-gap compounds with type-I-band alignment used for lasers in
these spectral ranges. At a later stage, the studies will be expanded
to cover emitters in the regime > 2 μm.
This project will benefit from detailed experiment/theory-comparisons
allowing for systematic investigations of the structural influence of
the real potential profile on the gain as well as on spontaneous and
nonradiative losses (Auger, inter-valence band absorption). In
particular, the detailed analysis of the charge transfer dynamics under
high carrier density excitation will form the basis also for
mode-locked laser operation in these novel interface-dominated laser
structures with type-II-band alignment.
Project-Related Publications
- F. Zhang, C. Möller, M. Koch, S.W. Koch, A. Rahimi-Iman, W.
Stolz
Impact of detuning on the performance of semiconductor disc lasers
Appl. Phys. B 123, 291 (2017). - I. Kilen, S.W. Koch, J. Hader, J.V. Moloney
Mode-locking in vertical external-cavity surfaceemitting lasers with type-II quantum-well configurations
Appl. Phys. Lett. 114, 252102 (2019). - P. Kükelhan, A. Beyer, C. Fuchs, M.J. Weseloh, S.W. Koch, W. Stolz,
K. Volz
Atomic structure of “W”-type quantum well heterostructures investigated by aberration-corrected STEM
J. Microscopy 268, 259 (2017). - J.O. Oelerich, M.J. Weseloh, K. Volz, S.W. Koch
Ab-initio calculation of band alignments for opto-electronic simulations
AIP Adv. 9, 055328 (2019). - C. Fuchs, A. Brüggemann, M.J. Weseloh, C. Berger, C. Möller, S.
Reinhard, J. Hader, J.V. Moloney, A. Bäumner, S.W. Koch, W. Stolz
High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well lasers emitting at 1.3 μm
Sci. Rep. 8, 1422 (2018).