Research at the STRL
epitaxial growth
nanostructure
device concepts
Focus of our structural analysis activities
(nano)structure and heterointerfaces of novel, metastable III/V semiconductors
pseudomorphic and metamorphic integration of III/V semiconductors on Silicon and Germanium
magnetic semiconductors
Methods
Transmission
electron microscopy (TEM)
(convergent beam) electron diffraction / precession electron diffraction
diffraction contrast imaging
(Cs-corrected) high resolution imaging
Z-contrast imaging (using a Cs-corrected probe)
Atomic force microscopy (AFM)
X-ray diffraction (XRD) and scattering
Scanning tunneling microscopy (STM)
Theoretical description
modeling of crystal structures of metastable materials and heterointerfaces
modeling of electron scattering data of metastable semiconductors
