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Abstract: Chem. Phys. Lett. 251, 1-7 (1996)

Optical second-harmonic investigations of H2 and D2 adsorption on Si(100)2×1: the surface temperature dependence of the sticking coefficient

P. Bratu, K. L. Kompa, and U. Höfer
Max-Planck-Institut für Quantenoptik, D-85740 Garching, Germany



Optical second-harmonic generation has been used to determine the sticking probability for dissociative adsorption of H2 and D2 on Si(100)2×1 as a function of surface temperature. The initial sticking coefficient increases from 10-8 at 550 K to 10-5 at 1000 K. It shows an activated behaviour as function of the surface temperature with an activation energy of 0.70±0.1 eV for H2 and 0.75±0.1 eV for D2. The results demonstrate that lattice distortions play a significantly stronger role in the adsorption process than expected solely from the tilting of Si-Si dimers.


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