Hauptinhalt
Publikationen
2026
Deep PACBED: Multitask analysis of PACBED images using deep neural networks
D. Schneider, J. Scheunert, D. Heimes, S. Firoozabadi, K. Volz, B. Freisleben
Ultramicroscopy, 114412
Robust coherent phonon mode at GaP/Si (001) heterointerface
K. Ishioka, G. Mette, S. Youngkin, A. Beyer, W. Stolz, K. Volz, C.J. Stanton, U. Höfer
Journal of Physics: Condensed Matter 38 (17), 175001
Gallium–Sulfur-Compounds as Potential Single-Source MOCVD Precursors
L. Erlemeier, M. Balmer, S.R. Kachel, R. Günkel, L. Neuhaus, F. Münster, K. Zoltner, T. Sundriyal, J. Belz, K. Volz, J.M. Gottfried, C. von Hänisch
Organometallics 45 (7), 799-809
Direct epitaxial growth and deterministic device integration of high-quality telecom O-band InGaAs quantum dots on silicon substrate
I. Limame, P.Ludewig, A. Koulas-Simos, C.C. Palekar, J. Donges, C.-W. Shih, K. Gaur, S. Tripathi, S. Rodt, W. Stolz, K. Volz, S. Reitzenstein
APL Photonics 11 (4)
Mechanofusion-derived cathode composite microstructures with scalable mixed conducting matrix coatings for solid state batteries
M. Kissel, F. Frankenberg, T. Demuth, A. Lai, N. Laser, D. Wagner, A. Eisa, P. Michalowski, K. Volz, A. Kwade, J. Janek
Nature Communications
Fully inorganic LLZO-based composite cathodes: the impact of Ga substitution on compatibility with cathode active materials during co-sintering
C. Roitzheim, F. Hueppe, Y. Jung Sohn, Y. Collette, W.S. Scheld, D. Sebold, T. Demuth, K. Volz, O. Guillon, D. Fattakhova-Rohlfing, M. Finsterbusch
Energy Materials 6 (3), N/A-N/A
Rabi splitting and exciton dynamics in MoSe₂ monolayers and (Ga, In) As quantum wells: a comparative study of light–matter coupling regimes
F. Schäfer, H. Mittenzwey, M. Stein, O. Voigt, L. Greten, D. Anders, I. Müller, F. Dobener, M. Cuccu, C. Fuchs, K. Watanabe, T. Tanaguchi, A. Chernikov, K. Volz, S. Chatterjee
Ultrafast Phenomena and Nanophotonics XXX, PC138940J
Metal-modulated growth of phase-pure cubic InGaN for red-emitting bulk layers and quantum wells
S.A. Jentsch, A.F. Campbell, M.F. Zscherp, M. Chia, M. Stein, M. Becker, A. Beyer, D.J. As, J. Schörmann, J. Lähnemann, K. Volz, S. Chatterjee
Gallium Nitride Materials and Devices XXI, PC1389605
AlScN pseudo-substrates for lattice-matched growth of high-in-content InGaN targeting red micro-LEDs
J. Schörmann, M. F. Zscherp, S. A. Jentsch, M. Becker, M. Stein, F. Meierhofer, C. Margenfeld, F. Winkler, A. Beyer, K. Volz, A. Waag, S. Chatterjee
Light-Emitting Devices, Materials, and Applications XXX, PC1391307
Determining the grain orientations of battery materials from electron diffraction patterns using convolutional neural networks
J. Scheunert, S. Ahmed, T. Demuth, A. Beyer, S. Wissel, B.X. Xu, K. Volz
npj Computational Materials
Low Temperature MOCVD Synthesis of High‐Mobility 2D InSe
R. Günkel, O. Maßmeyer, M. Stein, K. Bräumer, R. Sandoval Rodriguez, D. Anders, J.‐H. Littmann, S. Anhäuser, B. Ojaghi Dogahe, M. Bergmann, M. Solanki, N.F. Langlotz, J. Glowatzki, J. Belz, A. Beyer, G. Witte, S. Chatterjee, K. Volz
Small 22 (11), e10911
Microstructure of Silicon Anodes in Solid‐State Batteries‐From Crystalline to Amorphous
S. Ahmed, F. Rossi, H. Huo, J. Haust, F. Hüppe, J. Belz, A. Beyer, J. Janek, K. Volz
Advanced Energy Materials 16 (2), e04418
In Situ 4D STEM of LiNiO2 Particles Heated in an Oxygen Atmosphere: Toward Investigation of Solid‐State Batteries Under Realistic Processing Conditions
T. Demuth, S. Ahmed, P. Kurzhals, J. Haust, J. Belz, A. Beyer, J. Janek, K. Volz
Small Methods 10 (2), 2500357
2025
Exciton formation dynamics in (Ga, In) As quantum wells
D. Anders, F. Dobener, C. Fuchs, K. Volz, S. Chatterjee, M. Stein
Physical Review B 112 (23), 235301Excitons in Epitaxially Grown WS2 on Graphene: A Nanometer-Resolved Electron Energy Loss Spectroscopy and Density Functional Theory Study
M. Bergmann, J. Belz, O. Maßmeyer, B. Ojaghi Dogahe, R. Günkel, J. Glowatzki, A. Beyer, I. Solovev, J.-C. Drawer, M. Ensmann, S. Pasko, S. Krotkus, M. Heuken, S. Wippermann, K. Volz
ACS nanoUnveiling the growth mode diagram of GaSe on sapphire
M. Bissolo, M. Dembecki, J. Belz, J. Schabesberger, M. Bergmann, P. Avdienko, F. Rauscher, A. S. Ulhe, H. Riedl, K. Volz, J. J. Finley, E. Zallo, G. Koblmüller
Communications Materials 6 (1), 279Atomic surface structure of antiphase domains in heteroepitaxial GaP films grown on arsenic-terminated Si (100)
P. Kleinschmidt, D. Bratek, M. Nandy, J. Koch, V. S. Chejarla, A. Beyer, K. D. Hanke, K. Volz, A. Paszuk, T. Hannappel
Journal of Crystal Growth, 128450Exciton formation dynamics in (Ga, In) As quantum wells
D. Anders, F. Dobener, C. Fuchs, K. Volz, S. Chatterjee, M. Stein
Physical Review B 112 (23), 235301MOCVD growth of covalent and 2D GaxSey: a phase validation and characterization
N.F. Langlotz R. Günkel, D. Muth, I. Limame, N. Ghadghooni, M. Bergmann, M. Kröner, J. Belz, A. Beyer, S. Reizenstein, M. Gerhard, K. Volz
npj 2D Materials and Applications 9 (1), 113Microstructure of Silicon Anodes in Solid‐State Batteries‐From Crystalline to Amorphous
S. Ahmed, F. Rossi, H. Huo, J. Haust, F. Hüppe, J. Belz, A. Beyer, J. Janek, K. Volz
Advanced Energy Materials, e04418STEM diffraction pattern analysis with deep learning networks
S. Wissel, J. Scheunert, A. Dextre, S. Ahmed, A. Beyer, K. Volz, B.-X. Xu
Materials & Design, 115069Reduction of NAD and NMN on mineral surfaces with H2 reveals a functional role for the AMP moiety in a prebiotic context
D. P. Henriques Pereira, X. Xie, S. V. Stewart, Z. Subrati, T. Beyazay, N. Paczia, J. Belz, K. Volz, V. Erastova, H. Tüysüz, M. Preiner
Communications Chemistry 8 (1), 318AlScN Pseudosubstrates for High Indium Content InGaN Alloy Epitaxy
J. Schörmann, M. F. Zscherp, S. A. Jentsch, M. Becker, M. Stein, F. Meierhofer, C. Margenfeld, F. Winkler, A. Beyer, K. Volz, A. Waag, S. Chatterjee
ACS Applied Materials & Interfaces 17 (44), 61445-61452Sequential tilting 4D-STEM for improved momentum-resolved STEM field mapping
C. Flathmann, U. Ross, J. Belz, A. Beyer, K. Volz, M. Seibt, T. Meyer
Microscopy and Microanalysis 31 (5), ozaf086LiNbO3 Coatings on NCM622: Structure and Performance Insights
J. Haust, Y. Guo, J. Belz, S. Ahmed, N. Adeli, F. Hüppe, L. C. Erhard, V. Mereacre, J. Rohrer, A.-L. Hansen, H. Ehrenberg, K. Albe, J. R. Binder, K. Volz
Advanced Materials Interfaces 12 (17), e00590Design of a functional steam electrode for Proton-conducting ceramic electrolysis cells based on BaCo0. 4Fe0. 4Zr0. 2O3− δ: BaZr0. 7Ce0. 2Y0. 1O3− δ composite
S. K. Dwivedi, L.-A. Schaefer, Y. Zeng, Y. J. Sohn, J. Malzbender, A. Beyer, C. Becker, K. Volz, N. H. Menzler, O. Guillon, M. E. Ivanova, R. Kumar
Journal of the European Ceramic Society 45 (11), 117348Imaging Built-in Electric Fields and Light Matter by Fourier-precession TEM
T. Lorenzen, B. März, T. Xue, A. Beyer, K. Volz, T. Bein, K. Müller-Caspary
Microscopy and Microanalysis 31 (Supplement_1), ozaf048. 035Carrier dynamics in site-controlled InGaAsN: H/GaAs quantum disks
S. Gandan, J. S. D. Morales, G. Pettinari, M. Felici, E. Sterzer, K. Volz, A. Polimeni
Journal of Applied Physics 137 (22)Mechanism of Self-Assembled Cubic InGaN/GaN Quantum Well Formation in Metal-Modulated Molecular Beam Epitaxy
M. F. Zscherp, S. A. Jentsch, V. Lider, M. Chia. A. Beyer, A. Henss, D. J. As, K. Volz, S. Chatterjee, J. Schörmann
Crystal Growth & Design 25 (11), 3793-3799Effect of a Two-Step Temperature-Swing Synthesis on Coarse-Grained LiNiO2 Secondary Particles Characterized by Scanning Transmission Electron Microscopy
T. Demuth, P. Kurzhals, S. Ahmed, F. Riewald, M. Malaki, J. Haust, A. Beyer, J. Janek, K. Volz
Chemistry of Materials 37 (11), 3993-4004Unraveling Multiphase Conversion Pathways in Lithium–Sulfur Batteries through Cryo Transmission Electron Microscopy and Machine Learning-Assisted Operando Neutron Scattering
J.-M. von Mentlen, A. S. Güngör, T. Demuth, J. Belz, M. Plodinec, P. Dutta, A. Vizintin, L. Porcar, K. Volz, V. Wood, C. Prehal
ACS nano 19 (17), 16626-16638Interface‐Specific Excitation of Coherent Phonons at the Buried GaP/Si (001) Heterointerface
G.Mette, K. Ishioka, S. Youngkin, W. Stolz, K. Volz, U. Höfer
Advanced Materials Interfaces 12 (7), 2400573Design of a functional steam electrode for Proton-conducting ceramic electrolysis cells based on BaCo0.4Fe0.4Zr0.2O3−δ : BaZr0.7Ce0.2Y0.1O3−δ composite
S. K. Dwivedi, L.-A. Schaefer, Y. Zeng, Y. J. Sohn, J. Malzbender, A. Beyer, C. Becker, K. Volz, N. H. Menzler, O. Guillon, M. E. Ivanova, R. Kumar
Journal of the European Ceramic Society 45 (11) (2025), 117348Engineering the Artificial Cathode-Electrolyte Interphase Coating for Solid-State Batteries via Tailored Annealing
M. Kissel, F. Walther, J. Hertle, T. Demuth, R. Zhang, P. Brüner, T. Brezesinski, K. Volz, J. Janek
Chem. Mater. 37 (6) (2025), pp. 2192 - 2203Metal-Modulated Growth of Cubic, Red-Emitting InGaN Layers and Self-Assembled InGaN/GaN Quantum Wells by Molecular Beam Epitaxy
S. A. Jentsch, M. F. Zscherp, V. Lider, F. Winkler, A. Beyer, J. Belz, N. M. Gimbel, M. Stein, D. J. As, A. Henss, K. Volz, S. Chatterjee, J. Schörmann
ACS Appl. Electron. Mater. 7 (5) (2025), pp. 1891 - 1898Interface-Specific Excitation of Coherent Phonons at the Buried GaP/Si(001) Heterointerface
G. Mette, K. Ishioka, S. Youngkin, W. Stolz, K. Volz, U. Höfer
Adv. Mater. Interfaces (2025), 2400573, doi.org/10.1002/admi.202400573Lithiated polymer coating for interface stabilization in Li6PS5Cl-based solid-state batteries with high-nickel NCM
B.-X. Shi, F. Weber, Y. Yusim, T. Demuth, K. Vettori, A. Münchinger, G. Titvinidze, K. Volz, A. Henss, R. Berger and F. H. Richter
J. Mater. Chem. A 13 (4) (2025), pp. 2600 - 2614Correlation of interface structure and optical properties of Ga(N,As) and Ga(As,Bi) based type-II hetero structures
T. Hepp, S. Firoozabadi, R. Günkel, V. Chejarla, O. Maßmeyer, A. Beyer, K. Volz
J. Cryst. Growth 651 (2025), 1279762024
Charge transfer magnetoexcitons in magnetoabsorption spectra of asymmetric type-II double quantum wells
J. Röder, M. Gerhard, C. Fuchs, W. Stolz, W. Heimbrodt, M. Koch, C. Ngo, J. T. Steiner, T. Meier
Phys. Rev. B 110 (19) (2024), 195306
The dinucleotide structure of NAD enables specific reduction on mineral surfaces
D. P. Henriques Pereira, X. Xie, T. Beyazay, N. Paczia, Z. Subrati, J. Belz, K. Volz, H. Tüysüz, M. Preiner
bioRxiv, 2024.10. 11.617347
Synthesis of 2D Gallium Sulfide with Ultraviolet Emission by MOCVD
O. Maßmeyer, R. Günkel, J. Glowatzki, P. Klement, B. Ojaghi Dogahe, S. R. Kachel, F. Gruber, M. Müller, M. Fey, J. Schörmann, J. Belz, A. Beyer, J. M. Gottfried, S. Chatterjee, K. Volz
Small 20 (37) (2024), 2402155
A Small Step for Epitaxy, a Large Step Toward Twist Angle Control in 2D Heterostructures
O. Maßmeyer, J. Belz, B. Ojaghi Dogahe, M. Widemann, R. Günkel, J. Glowatzki, M. Bergmann, S. Pasko, S. Krotkus, M. Heuken, A. Beyer, K. Volz
Adv. Mater. Interfaces 11 (23) (2024), 2400158
Near-Infrared Light Trapping and Avalanche Multiplication in Silicon Epitaxial Microcrystals
V. Falcone, A. Barzaghi, F. Signorelli, J. Valente, S. Firoozabadi, C. Zucchetti, R. Bergamaschini, A. Ballabio, F. Bottegoni, F. Zappa, F. Montalenti, L. Miglio, K. Volz, D. J. Paul, P. Biagioni, A. Tosi, G. Isella
Adv. Optical Mater. 12 (14) (2024), 2302568
Optical Stark effect in type-II semiconductor heterostructures
F. Schäfer, A. Trautmann, C. Ngo, J. T. Steiner, C. Fuchs, K. Volz, F. Dobener, M. Stein, T. Meier, and S. Chatterjee
Phys. Rev. B 109 (7) (2024), 075301
Chemo-mechanical failure mechanisms of the silicon anode in solid-state batteries
H. Huo, M. Jiang, Y. Bai, S. Ahmed, K. Volz, H. Hartmann, A. Henss, C. V. Singh, D. Raabe & J. Janek
Nature Materials 23 (2024), pp. 543 - 551
Imaging built-in electric fields and light matter by Fourier-precession TEM
T. Lorenzen, B. März, T. Xue, A. Beyer, K. Volz, T. Bein & K. Müller-Caspary
Scientific Reports 14 (2024), 1320
“Depo-all-around”: A novel FIB-based TEM specimen preparation technique for solid state battery composites and other loosely bound samples
T. Demuth, T. Fuchs, A. Beyer, J. Janek, K. Volz
Ultramicroscopy 257 (2024), 113904
Metal Organic Vapor Phase Epitaxy in a Transmission Electron Microscope
M. Widemann, D. Krug, O. Maßmeyer, F. Gruber, A. Beyer, K. Volz
Small Methods 8 (7) (2024), 23010792023
Probing the Interface Evolution in Co-sintered All-Phosphate Cathode-Solid Electrolyte Composites
M. Malaki, J. Haust, J. P. Beaupain, H. Auer, A. Beyer, K. Wätzig, M. Kusnezoff, K. Volz
Adv. Mater. Interfaces 10 (35) (2023), 2300513
Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN
M. F. Zscherp, S. A. Jentsch, M. J. Müller, V. Lider, C. Becker, L. Chen, M. Littmann, F. Meier, A. Beyer, D. M. Hofmann, D. J. As, P. J. Klar, K. Volz, S. Chatterjee, J. Schörmann
ACS Applied Materials & Interfaces 15 (33) (2023), pp. 39513 - 39522
Impact of beam size and diffraction effects in the measurement of long-range electric fields in crystalline samples via 4DSTEM
D. Heimes, V. S. Chejarla, S. Ahmed, F. Hüppe, A. Beyer, K. Volz
Ultramicroscopy 253 (2023), 113821
Accurate first principles band gap predictions in strain engineered ternary III-V semiconductors
B. Mondal, M. Kröner, T. Hepp, K. Volz, and R. Tonner-Zech
Phys. Rev. B 108 (3) (2023), 035202
Structure determination in a new type of amorphous molecular solids with different nonlinear optical properties: a comparative structural analysis
J. Link Vasco, J. R. Stellhorn, B. D. Klee, B. Paulus, J. Belz, J. Haust, S. Hosokawa, S. Hayakawa, K. Volz, I. Rojas León, J. Christmann, S. Dehnen, W.-C. Pilgrim
Journal of Physics: Condensed Matter 35 (38) (2023), 384001
Stressed during cycling: Electrochemically induced mechanical deformation in Ni-rich cathode materials
S. Ahmed, K. Volz
Matter 6 (6) (2023), pp. 1682 - 1684
Measuring Spatially-Resolved Potential Drops at Semiconductor Hetero-Interfaces Using 4D-STEM
V. S. Chejarla, S. Ahmed, J. Belz, J. Scheunert, A. Beyer, K. Volz
Small Methods 7 (9) (2023), 2300453
Influence of the sintering temperature on LLZO-NCM cathode composites for solid-state batteries studied by transmission electron microscopy
T. Demuth, T. Fuchs, F. Walther, A. Pokle, S. Ahmed, M. Malaki, A. Beyer, J. Janek, K. Volz
Matter 6 (7) (2023), pp. 2324 - 2339
The Influence of Internal Interfaces on Charge-Carrier Diffusion in Semiconductor Heterostructures
N. Mengel, L. Gümbel, P. Klement, M. Fey, C. Fuchs, K. Volz, S. Chatterjee, M. Stein
Phys. Status Solidi B 260 (9) (2023), 2300103
Kinking of GaP Nanowires Grown in an In Situ (S)TEM Gas Cell Holder
D. Krug, M. Widemann, F. Gruber, S. Ahmed, T. Demuth, A. Beyer, K. Volz
Adv. Mater. Interfaces 10 (17) (2023), 2202507
Mitigating Contact Loss in Li6PS5Cl-Based Solid-State Batteries Using a Thin Cationic Polymer Coating on NCM
B.-X. Shi, Y. Yusim, S. Sen, T. Demuth, R. Ruess, K. Volz, A. Henss, F. H. Richter
Adv. Energy Mater. 13 (24) (2023), 2300310
Self-catalyzed GaP nanowire MOVPE growth on Si
D. Krug, J. Glowatzki, F. Hüppe, M. Widemann, F. Gruber, A. Beyer, K. Volz
J. Cryst. Growth 609 (2023), 127138
Gain recovery dynamics in active type-II semiconductor heterostructures
F. Schäfer, M. Stein, J. Lorenz, F. Dobener, C. Ngo, J. T. Steiner, C. Fuchs, W. Stolz, K. Volz, T. Meier, J. Hader, J. V. Moloney, S. W. Koch, S. Chatterjee
Appl. Phys. Lett. 122 (8) (2023), 082104
Formation of an Artificial Cathode–Electrolyte Interphase to Suppress Interfacial Degradation of Ni-Rich Cathode Active Material with Sulfide Electrolytes for Solid-State Batteries
T.-T. Zuo, F. Walther, S. Ahmed, R. Rueß, J. Hertle, B. Mogwitz, K. Volz, J. Janek
ACS Energy Lett. 8 (3) (2023), pp. 1322 - 1329
Insights into molecular cluster materials with adamantane-like core structures by considering dimer interactions
S. Schwan, A. J. Achazi, F. Ziese, P. R. Schreiner, K. Volz, S. Dehnen, S. Sanna, D. Mollenhauer
J. Comput. Chem. 44 (7) (2023), pp. 843 - 856
Coating versus Doping: Understanding the Enhanced Performance of High-Voltage Batteries by the Coating of Spinel LiNi0.5Mn1.5O4 with Li0.35La0.55TiO3
V. Mereacre, P. Stüble, V. Trouillet, S. Ahmed, K. Volz, J. R. Binder
Adv. Mater. Interfaces 10 (2) (2023), 2201324
Probing the Ni(OH)2 Precursor for LiNiO2 at the Atomic Scale: Insights into the Origin of Structural Defect in a Layered Cathode Active Material
A. Pokle, D. Weber, M. Bianchini, J. Janek, K. Volz
Small 19 (4) (2023), 22055082022
Phase relaxation control in heterostructures featuring charge-transfer excitons
M. Fey, M. Stein, C. Fuchs, W. Stolz, K. Volz, S. Chatterjee
Phys. Rev. B 106 (16) (2022), 165303
AlN Buffer Enhances the Layer Quality of MBE-Grown Cubic GaN on 3C-SiC
M. F. Zscherp, N. Mengel, D. M. Hofmann, V. Lider, B. Ojaghi Dogahe, C. Becker, A. Beyer, K. Volz, J. Schörmann, S. Chatterjee
Cryst. Growth Des. 22 (11) (2022), pp. 6786 - 6791
Octave-spanning emission across the visible spectrum from single crystalline 1,3,5,7-tetrakis-(p-methoxyphenyl)adamantane
M. J. Müller, F. Ziese, J. Belz, F. Hüppe, S. Gowrisankar, B. Bernhardt, S. Schwan, D. Mollenhauer, P. R. Schreiner, K. Volz, S. Sanna, S. Chatterjee
Opt. Mater. Express 12 (9) (2022), pp. 3517 - 3529
Terahertz radiation from propagating acoustic phonons based on deformation potential coupling
S.-H. Park, S. Lee, K. Ishioka, C. J. Stanton, C.-S. Kee, A. Beyer, U. Höfer, W. Stolz, K. Volz, Y.-D. Jho
Opt. Express 30 (13) (2022), pp. 23544 - 23555
Adamantanes as White-Light Emitters: Controlling the Arrangement and Functionality by External Coulomb Forces
J. Belz, J. Haust, M. J. Müller, K. Eberheim, S. Schwan, S. Gowrisankar, F. Hüppe, A. Beyer, P. R. Schreiner, D. Mollenhauer, S. Sanna, S. Chatterjee, K. Volz
J. Phys. Chem. C 126 (23) (2022), pp. 9843 - 9854
Deeper Understanding of the Lithiation Reaction during the Synthesis of LiNiO2 Towards an Increased Production Throughput
P. Kurzhals, F. Riewald, M. Bianchini, S. Ahmed, A. M. Kern, F. Walther, H. Sommer, K. Volz, J. Janek
J. Electrochem. Soc. 169 (5) (2022), 050526
Quantitative composition determination by ADF-STEM at a low-angular regime: a combination of EFSTEM and 4DSTEM
S. Firoozabadi, P. Kükelhan, A. Beyer, J. Lehr, D. Heimes, K. Volz
Ultramicroscopy 240 (2022), 113550
White Light Generating Molecular Materials: Correlation Between the Amorphous/Crystalline Structure and Nonlinear Optical Properties
J. Haust, J. Belz, M. Müller, B. D. Klee, J. Link Vasco, F. Hüppe, I. Rojas Léon, J. Christmann, A. Beyer, S. Dehnen, N. W. Rosemann, W.-C. Pilgrim, S. Chatterjee, K. Volz
ChemPhotoChem 6 (6) (2022), e202200071
Advanced Analytical Characterization of Interface Degradation in Ni-Rich NCM Cathode Co-Sintered with LATP Solid Electrolyte
M. Malaki, A. Pokle, S.-K. Otto, A. Henss, J. P. Beaupain, A. Beyer, J. Müller, B. Butz, K. Wätzig, M. Kusnezoff, J. Janek, K. Volz
ACS Appl. Energy Mater. 5 (4) (2022), pp. 4651 - 4663
Tracing Low Amounts of Mg in the Doped Cathode Active Material LiNiO2
D. Weber, J. Lin, A. Pokle, K. Volz, J. Janek, T. Brezesinski, M. Bianchini
J. Electrochem. Soc. 169 (3) (2022), 030540
Separation of interface and substrate carrier dynamics at a heterointerface based on coherent phonons
K. Ishioka, E. Angerhofer, C. J. Stanton, G. Mette, K. Volz, W. Stolz, and U. Höfer
Phys. Rev. B 105 (3) (2022), 035309
Effect of growth interruption on Ga(N, As)/Ga(As, Sb)/Ga(N, As) type-II-“W” quantum well heterostructures
J. Lehr, L. Hellweg, C. Fuchs, S. Firoozabadi, P. Kükelhan, A. Beyer, K. Volz, W. Stolz
J. Cryst. Growth 582 (2022), 126501
A Dry-Processed Al2O3/LiAlO2 Coating for Stabilizing the Cathode/Electrolyte Interface in High-Ni NCM-Based All-Solid-State Batteries
R. S. Negi, Y. Yusim, R. Pan, S. Ahmed, K. Volz, R. Takata, F. Schmidt, A. Henss, M. T. Elm
Adv. Mater. Interfaces 9 (8) (2022), 2101428
Room-temperature laser operation of a Ga(In,As)/Ga(As,Bi)/Ga(In,As) W-type laser diode
T. Hepp, J. Lehr, R. Günkel, O. Maßmeyer, J. Glowatzki, A. Ruiz Perez, S. Reinhard, W. Stolz, K. Volz
Electron. Lett. 58 (2) (2022), pp. 70 - 72
Selective Effects of the Host Matrix in Hydrogenated InGaAsN Alloys: Toward an Integrated Matrix/Defect Engineering Paradigm
F. Filippone, S. Younis, G. Mattioli, M. Felici, E. Blundo, A. Polimeni, G. Pettinari, D. Giubertoni, E. Sterzer, K. Volz, D. Fekete, E. Kapon, A. Amore Bonapasta
Adv. Funct. Mater. 32 (5) (2022), 21088622021
Understanding the formation of antiphase boundaries in layered oxide cathode materials and their evolution upon electrochemical cycling
S. Ahmed, A. Pokle, M. Bianchini, S. Schweidler, A. Beyer, T. Brezesinski, J. Janek, K. Volz
Matter 4 (12) (2021), pp. 3953 – 3966
Revealing the Significance of Catalytic and Alkyl Exchange Reactions during GaAs and GaP Growth by Metal Organic Vapor Phase Epitaxy
O. Maßmeyer, J. Haust, T. Hepp, R. Günkel, J. Glowatzki, C. von Hänisch, W. Stolz, K. Volz
ACS Omega 6 (42) (2021), pp. 28229 – 28241
Reaction of Li1.3Al0.3Ti1.7(PO4)3 and LiNi0.6Co0.2Mn0.2O2 in Co-Sintered Composite Cathodes for Solid-State Batterie
J. P. Beaupain, K. Waetzig, S.-K. Otto, A. Henss, J. Janek, M. Malaki, A. Pokle, J. Müller, B. Butz, K. Volz, M. Kusnezoff, and A. Michaelis
ACS Appl. Mater. Interfaces 13 (40) (2021), pp. 47488 – 47498
Dilute Bismuth Containing W-Type Heterostructures for Long-Wavelength Emission on GaAs Substrates
T. Hepp, J. Veletas, R. Günkel, O. Maßmeyer, J. Glowatzki, W. Stolz, S. Chatterjee, and K. Volz
Cryst. Growth Des. 21 (11) (2021), pp. 6307 – 6313
Optimization of imaging conditions for composition determination by annular dark field STEM
S. Firoozabadi, P. Kükelhan, T. Hepp, A. Beyer, K. Volz
Ultramicroscopy 230 (2021), 113387
Stabilizing the Cathode/Electrolyte Interface Using a Dry-Processed Lithium Titanate Coating for All-Solid-State Batteries
R. S. Negi, P. Minnmann, R. Pan, S. Ahmed, M. J. Herzog, K. Volz, R. Takata, F. Schmidt, J. Janek, and M. T. Elm
Chem. Mater. 33 (17) (2021), pp. 6713 – 6723
Amorphous Molecular Materials for Directed Supercontinuum Generation
S. Dehnen, P. R. Schreiner, S. Chatterjee, K. Volz, N. W. Rosemann, W.-C. Pilgrim, D. Mollenhauer, S. Sanna
ChemPhotoChem 5 (12) (2021), pp. 1033 – 1041
Quantification of low-Z elements by energy-filtered scanning transmission electron microscopy
S. Firoozabadi, A. Beyer, P. Kükelhan, D. Heimes, J. Lehr, K. Volz
Microscopy and Microanalysis 27 (S1) (2021), pp. 1528 – 1529
A robust technique to image all elements in LiNiO2 cathode active material by 4D-STEM
S. Ahmed, A. Pokle, J. Belz, M. Bianchini, A. Beyer, J. Janek and K. Volz
Microscopy and Microanalysis 27 (S1) (2021), pp. 1446 – 1449
Analyzing Nanometer-Thin Cathode Particle Coatings for Lithium-Ion Batteries — The Example of TiO2 on NCM622
Y. Moryson, F. Walther, J. Sann, B. Mogwitz, S. Ahmed, S. Burkhardt, L. Chen, P. J. Klar, K. Volz, S. Fearn, M. Rohnke, and J. Janek
ACS Appl. Energy Mater. 4 (7) (2021), pp. 7168 – 7181
Performance characteristics of low threshold current 1.25 μm type-II GaInAs/GaAsSb 'W'-lasers for optical communications
D. A. Duffy, I. P. Marko, C. Fuchs, T. D. Eales, J. Lehr, W. Stolz and S. J. Sweeney
J. Phys. D: Appl. Phys. 54 (36) (2021), 365104
Signatures of a frequency-modulated comb in a VECSEL
C. Kriso, A. Barua, O. Mohiuddin, C. Möller, A. Ruiz-Perez, W. Stolz, M. Koch, and A. Rahimi-Iman
Optica 8 (4) (2021), pp. 458 – 463
Synthesis and Postprocessing of Single-Crystalline LiNi0.8Co0.15Al0.05O2 for Solid-State Lithium-Ion Batteries with High Capacity and Long Cycling Stability
R. Fantin, E. Trevisanello, R. Ruess, A. Pokle, G. Conforto, F. H. Richter, K. Volz, and J. Janek
Chem. Mater. 33 (7) (2021), pp. 2624 - 2634
Quantitative Characterization of Nanometer-Scale Electric Fields via Momentum-Resolved STEM
A. Beyer, M. S. Munde, S. Firoozabadi, D. Heimes, T. Grieb, A. Rosenauer, K. Müller-Caspary, and K. Volz
Nano Letters 21 (5) (2021), 2018 – 2025
Optimized atomic layer deposition of homogeneous, conductive Al2O3 coatings for high-nickel NCM containing ready-to-use electrodes
R. S. Negi, S. P. Culver, M. Wiche, S. Ahmed, K. Volz and M. T. Elm
Phys. Chem. Chem. Phys. 23 (11) (2021), pp. 6725 – 6737
Comparison of carrier-recombination in Ga(As,Bi)/Ga(N,As)-type-II quantum wells and W-type heterostructures
J. Veletas, T. Hepp, F. Dobener, K. Volz, and S. Chatterjee
Appl. Phys. Lett. 118 (5) (2021), 052103
The influence of growth interruption on the luminescence properties of Ga(As,Sb)-based type II heterostructures
L. Rost, J. Lehr, M. Maradiya, L. Hellweg, F. Fillsack, W. Stolz, W. Heimbrodt
Journal of Luminescence 231 (2021), 117817
Angle-resolved STEM using an iris aperture: Scattering contributions and sources of error for the quantitative analysis in Si
T. Grieb, F. F. Krause, K. Müller-Caspary, S. Firoozabadi, C. Mahr, M. Schowalter, A. Beyer, O. Oppermann, K. Volz, A. Rosenauer
Ultramicroscopy 221 (2021), 113175
Monitoring the thermally induced transition from sp3-hybridized into sp2-hybridized carbons
D. B. Schüpfer, F. Badaczewski, J. Peilstöcker, J. M. Guerra-Castro, H. Shim, S. Firoozabadi, A. Beyer, K. Volz, V. Presser, C. Heiliger, B. Smarsly, P. J. Klar
Carbon 172 (2021), pp. 214 – 2272016 - 2020
2020
In Situ Monitoring of Thermally Induced Effects in Nickel-Rich Layered Oxide Cathode Materials at the Atomic Level
A. Pokle, S. Ahmed, S. Schweidler, M. Bianchini, T. Brezesinski, A. Beyer, J. Janek, and K. Volz
ACS Appl. Mater. Interfaces 12 (51) (2020), pp. 57047 – 57054
Influence of plasmon excitations on atomic-resolution quantitative 4D scanning transmission electron microscopy
A. Beyer, F. F. Krause, H. L. Robert, S. Firoozabadi, T. Grieb, P. Kükelhan, D. Heimes, M. Schowalter, K. Müller-Caspary, A. Rosenauer & K. Volz
Scientific Reports 10 (2020), 17890
Femtosecond time-resolved nonlinear optical spectroscopy of charge transfer at the buried GaP/Si(001) interface
G. Mette, J. E. Zimmermann, A. Lerch, K. Brixius, J. Güdde, A. Beyer, M. Dürr, K. Volz, W. Stolz, and U. Höfer
Appl. Phys. Lett. 117 (8) (2020), 081602
In situ analysis of Bi terminated GaAs (0 0 1) and Ga(As,Bi) surfaces during growth by MOVPE
O. Maßmeyer, T. Hepp, R. Günkel, J. Glowatzki, W. Stolz, K. Volz
Applied Surface Science 533 (2020), 147401
Widely Tunable Terahertz‐Generating Semiconductor Disk Laser
K. A. Fedorova, H. Guoyu, M. Wichmann, C. Kriso, F. Zhang, W. Stolz, M. Scheller, M. Koch, A. Rahimi-Iman
Phys. Status Solidi RRL 14 (10) (2020), 2000204
Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates
A. Barzaghi, S. Firoozabadi, M. Salvalaglio, R. Bergamaschini, A. Ballabio, A. Beyer, M. Albani, J. Valente, A. Voigt, D. J. Paul, L. Miglio, F. Montalenti, K. Volz, and G. Isella
Cryst. Growth Des. 20 (5) (2020), pp. 2914 – 2920
Ga(N,P) Growth on Si and Decomposition Studies of the N–P Precursor Di-tert-butylaminophosphane (DTBAP)
J. Glowatzki, O. Maßmeyer, M. Köster, T. Hepp, E. Odofin, C. von Hänisch, W. Stolz and K. Volz
Organometallics 39 (10) (2020), pp. 1772 – 1781
Progress in Sputter Growth of β‐Ga2O3 by Applying Pulsed‐Mode Operation
P. Schurig, F. Michel, A. Beyer, K. Volz, M. Becker, A. Polity, P. J. Klar
Phys. Status Solidi A 217 (10) (2020), 1901009
Direct Probe of Room-Temperature Quantum-Tunneling Processes in Type-II Heterostructures Using Terahertz Emission Spectroscopy
M. Stein, C. Fuchs, W. Stolz, D. M. Mittleman, and M. Koch
Phys. Rev. Applied 13 (5) (2020), 054073
Visualization of Light Elements using 4D STEM: The Layered‐to‐Rock Salt Phase Transition in LiNiO2 Cathode Material
S. Ahmed, M. Bianchini, A. Pokle, M. S. Munde, P. Hartmann, T Brezesinski, A. Beyer, J. Janek, K. Volz
Adv. Energy Mater. 10 (25) (2020), 2001026
Epitaxial Growth and Structural Characterization of Ceria Deposited by Atomic Layer Deposition on High-Surface Porous Yttria-Stabilized Zirconia Thin Films
M. F. Zscherp, J. Glaser, C. Becker, A. Beyer, P. Cop, J. Schörmann, K. Volz, M. T. Elm
Cryst. Growth Des. 20 (4) (2020), pp. 2194 – 2201
Anomalous Angle-Dependent Magnetotransport Properties of Single InAs Nanowires
P. Uredat, R. Kodaira, R. Horiguchi, S. Hara, A. Beyer, K. Volz, P. J. Klar, M. T. Elm
Nano Lett. 20 (1) (2020), pp. 618 - 624
Wavelength and Pump-Power Dependent Nonlinear Refraction and Absorption in a Semiconductor Disk Laser
C. Kriso, S. Kress, T. Munshi, M. Grossmann, R. Bek, M. Jetter, P. Michler, W. Stolz, M. Koch, A. Rahimi-Iman
IEEE Photonics Technology Letters 32 (2) (2020), pp. 85 - 88
2019
Effect of the interface morphology on the lateral electron transport in (001) GaP/Si heterostructures
L. Ostheim, P. J. Klar, Y. Moryson, M. Rohnke, A. Beyer, M. Volk, M. Munde, W. Stolz, and K. Volz
J. Appl. Phys. 126 (2019), 215704
Detailed Identification of the Progression of Antiphase Boundaries in GaP/Si(001)
P. Farin, M. Marquardt, W. Martyanov, J. Belz, A. Beyer, K. Volz and A. Lenz
ECS Trans. 93 (1) (2019), 93
Bismuth surface segregation and disorder analysis of quaternary (Ga,In)(As,Bi)/InP alloys
J. Veletas, T. Hepp, K. Volz, and S. Chatterjee
J. Appl. Phys. 126 (13) (2019), 135705
Metalorganic vapor phase epitaxy growth and characterization of quaternary (Ga,In)(As,Bi) on GaAs substrates
T. Hepp, O. Maßmeyer, D. A. Duffy, S. J. Sweeney, and K. Volz
J. Appl. Phys. 126 (8) (2019), 085707
In Situ Studies for Understanding Intragranular Nanopore Evolution in Ni-rich Layered Oxide Cathode Material
A. Pokle, S. Ahmed, A. Beyer, S. Schweidler, M. Bianchini, P. Hartmann, T. Brezesinski, J. Janek and K. Volz
Microscopy and Microanalysis 25 (S2) (2019), pp. 2032 - 2033
Decomposition Mechanisms of Di-tert-butylaminoarsane (DTBAA)
O. Maßmeyer, S. Inacker, T. Hepp, J. Glowatzki, L. Nattermann, E. Sterzer, C. Ritter, C. von Hänisch, W. Stolz, K. Volz
Organometallics 38 (16) (2019), 3181 - 3186
The Role of Intragranular Nanopores in Capacity Fade of Nickel-Rich Layered Li(Ni1–x–yCoxMny)O2 Cathode Materials
S. Ahmed, A. Pokle, S. Schweidler, A. Beyer, M. Bianchini, F. Walther, A. Mazilkin, P. Hartmann, T. Brezesinski, J. Janek, K. Volz
ACS Nano 13 (9) (2019), 10694 - 10704
Monolithic integration of lattice-matched Ga(NAsP)-based laser structures on CMOS-compatible Si (001) wafers for Si-photonics applications
K. Volz, P. Ludewig, W. Stolz
Semiconductors and Semimetals 101 (2019), pp. 201 - 227
Two-chip power-scalable THz-generating semiconductor disk laser
H. Guoyu, C. Kriso, F. Zhang, M. Wichmann, W. Stolz, K. A. Fedorova, and A. Rahimi-Iman
Optics Letters 44 (16) (2019), pp. 4000 - 4003
Microcavity-enhanced Kerr nonlinearity in a vertical-external-cavity surface-emitting laser
C. Kriso, S. Kress, T. Munshi, M. Grossmann, R. Bek, M. Jetter, P. Michler, W. Stolz, M. Koch, and A. Rahimi-Iman
Optics Express 27 (9) (2019), pp. 11914 - 11929
Erratum: Optics Express 29 (15) (2021), pp. 23290 – 23291
Monolithic III/V integration on (001) Si substrate
B. Kunert, K. Volz
In: Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Material Properties and Applications, 1st Ed., S. Irvine, P. Capper (Eds.)
John Wiley and Sons Ltd. (2019), pp. 241 - 291
Segregation at interfaces in (GaIn) As/Ga (AsSb)/(GaIn) As-quantum well heterostructures explored by atomic resolution STEM
P. Kükelhan, S. Firoozabadi, A. Beyer, L. Duschek, C. Fuchs, J. O. Oelerich, W. Stolz, K. Volz
Journal of Crystal Growth 524 (2019), 125180
Ge/SiGe parabolic quantum wells
A. Ballabio, J. Frigerio, S. Firoozabadi, D. Chrastina, A. Beyer, K. Volz, G. Isella
Journal of Physics D: Applied Physics 52 (41) (2019), 415105
Atomic Layer Deposition of Titania in Ordered Mesoporous Cerium Zirconium Oxide Thin Films: A Case Study
P. Cop, M. Göttlicher, J. Schörmann, C. Boissière, A. Beyer, C. Becker, K. Volz, H. Over, B. M. Smarsly
J. Phys. Chem. C 123 (20) (2019), pp. 12851 - 12861
MOVPE Growth and Device Applications of Ternary and Quaternary Dilute Bismide Alloys on GaAs Substrates
T. Hepp, L. Nattermann, K. Volz
In: Bismuth-Containing Alloys and Nanostructures, S. Wang, P. Lu (Eds.), Springer, Singapore
Springer Series in Materials Science 285 (2019), pp. 37 - 58
Composition determination for quaternary III–V semiconductors by aberration-corrected STEM
P. Kükelhan, T. Hepp, S. Firoozabadi, A. Beyer, K. Volz
Ultramicroscopy 206 (2019), 112814
Ab-initio calculation of band alignments for opto-electronic simulations
J. O. Oelerich, M. J. Weseloh, K. Volz, and S. W. Koch
AIP Advances 9 (2019), 055328
Advanced Electron Microscopy for III/V on Silicon Integration
A. Beyer, K. Volz
Adv. Mater. Interfaces 6 (12) (2019), 1801951
Simultaneous determination of local thickness and composition for ternary III-V semiconductors by aberration-corrected STEM
P. Kükelhan, A. Beyer, S. Firoozabadi, T. Hepp, K. Volz
Ultramicroscopy 201 (2019), pp. 49 - 57
Giant bowing of the band gap and spin-orbit splitting energy in GaP1-xBix dilute bismide alloys
Z. L. Bushell, C. A. Broderick, L. Nattermann, R. Joseph, J. L. Keddie, J. M. Rorison, K. Volz, S. J. Sweeney
Scientific Reports 9 (2019), 6835
Composition determination of semiconductor alloys towards atomic accuracy by HAADF-STEM
L. Duschek, P. Kükelhan, A. Beyer, S. Firoozabadi, J. O. Oelerich, C. Fuchs, W. Stolz, A. Ballabio, G. Isella, K. Volz
Ultramicroscopy 200 (2019), pp. 84 - 96
Linewidth broadening and tunneling of excitons bound to N pairs in dilute GaAs:N
B. Fluegel, D. A. Beaton, K. Alberi, K. Volz, W. Stolz
J. Appl. Phys. 125 (14) (2019), 145704
Three-dimensional structure of antiphase domains in GaP on Si(001)
P. Farin, M. Marquardt, W. Martyanov, J. Belz, A. Beyer, K. Volz, A. Lenz
Journal of Physics: Condensed Matter 31 (14) (2019), 144001
Single-and dual-variant atomic ordering in GaAsP compositionally graded buffers on GaP and Si substrates
R. M. France, M. Feifel, J. Belz, A. Beyer, K. Volz, J. Ohlmann, D. Lackner, F. Dimroth
Journal of Crystal Growth 506 (2019), pp. 61 - 70
Coherent optical and acoustic phonons generated at lattice-matched GaP/Si(0 0 1) heterointerfaces
K. Ishioka, A. Beyer, W. Stolz, K. Volz, H. Petek, U. Höfer and C. J. Stanton
J. Phys.: Condensed Matter 31 (9) (2019), 094003
2018
Modeling and experimental realization of modelocked VECSEL producing high power sub-100 fs pulses
A. Laurain, I. Kilen, J. Hader, A. Ruiz Perez, P. Ludewig, W. Stolz, S. Addamane, G. Balakrishnan, S. W. Koch, and J. V. Moloney
Appl. Phys. Lett. 113 (12) (2018), 121113
Correlation of optical properties and interface morphology in type-II semiconductor heterostructures
L. Rost, S. Gies, M. Stein, C. Fuchs, S. Nau, P. Kükelhan, K. Volz, W. Stolz, M. Koch, W. Heimbrodt
J. Phys.: Condens. Matter 31 (1) (2018), 014001
Investigation of fluorine and nitrogen as anionic dopants in nickel-rich cathode materials for lithium-ion batteries
J. O. Binder, S. P. Culver, R. Pinedo, D. A. Weber, M. S. Friedrich, K. I. Gries, K. Volz, W. G. Zeier, J. Janek
ACS Appl. Mater. Interfaces 10 (51) (2018), pp. 44452 - 44462
Atomic-scale 3D reconstruction of antiphase boundaries in GaP on (001) silicon by STEM
J. Belz, A. Beyer, K. Volz
Micron 114 (2018), pp. 32 - 41
Influence of the atom source operating parameters on the structural and optical properties of InxGa1-xN nanowires grown by plasma-assisted molecular beam epitaxy
P. Hille, F. Walther, P. Klement, J. Müßener, J. Schörmann, J. Kaupe, S. Mitić, N. W. Rosemann, S. Chatterjee, A. Beyer, K. I. Gries, K. Volz, and M. Eickhoff
J. Appl. Phys. 124 (16) (2018), 165703
Direct Growth of III–V/Silicon Triple-Junction Solar Cells With 19.7% Efficiency
M. Feifel, J. Ohlmann, J. Benick, M. Hermle, J. Belz, A. Beyer, K. Volz, T. Hannappel, A. W. Bett, D. Lackner, F. Dimroth
IEEE Journal of Photovoltaics 8 (6) (2018), pp. 1590 - 1595
Second-harmonic generation as a probe for structural and electronic properties of buried GaP/Si(001) interfaces
K. Brixius, A. Beyer, G. Mette, J. Güdde, M. Dürr, W. Stolz, K. Volz, and U. Höfer
J. Phys.: Condensed Matter 30 (48) (2018), 484001
Influence of UDMHy on GaAs (0 0 1) surface reconstruction before and during growth of Ga(NAs) by MOVPE
O. Maßmeyer, E. Sterzer, L. Nattermann, W. Stolz, K. Volz
Applied Surface Science 458 (2018), pp. 512 - 516
Enhanced Absorption by Linewidth Narrowing in Optically Excited Type-II Semiconductor Heterostructures
M. Stein, C. Lammers, M. J. Drexler, C. Fuchs, W. Stolz, and M. Koch
Phys. Rev. Lett. 121 (1) (2018), 017401
Thermally Introduced Bismuth Clustering in Ga(P,Bi) Layers under Group V Stabilised Condi-tions Investigated by Atomic Resolution In Situ (S)TEM
R. Straubinger, M. Widemann, J. Belz, L. Nattermann, A. Beyer and K. Volz
Scientific Reports 8 (1) (2018), 9048
1 eV Ga(NAsSb) grown by MOVPE using di-tertiary-butyl-arsano-amine (DTBAA)
E. Sterzer, O. Maßmeyer, L. Nattermann, K. Jandieri, S. Gupta, A. Beyer, B. Ringler, C. von Hänisch, W. Stolz, and K. Volz
AIP Advances 8 (5) (2018), 055329
Structural and Electronic Properties of Isovalent Boron Atoms in GaAs
C. M. Krammel, L. Nattermann, E. Sterzer, K. Volz, P. M. Koenraad
J. Appl. Phys. 123 (16) (2018), 161589
Optical functions and critical points of dilute bismide alloys studied by spectroscopic ellipsometry
Z. L. Bushell, R. M. Joseph, L. Nattermann, P. Ludewig, K. Volz, J. L. Keddie, S. J. Sweeney
J. Appl. Phys. 123 (4) (2018), 045701
Dynamics of charge-transfer excitons in type-II semiconductor heterostructures
M. Stein, C. Lammers, P.-H. Richter, C. Fuchs, W. Stolz, M. Koch, O. Vänskä, M. J. Weseloh, M. Kira, and S. W. Koch
Phys. Rev. B 97 (12) (2018), 125306
Ab initio calculations of the concentration dependent band gap reduction in dilute nitrides
P. Rosenow, L. C. Bannow, E. W. Fischer, W. Stolz, K. Volz, S. W. Koch, and R. Tonner
Phys. Rev. B 97 (7) (2018), 075201
Tailoring the diameter of electrospun layered perovskite nanofibers for photocatalytic water splitting
A. Bloesser, P. Voepel, M. O. Loeh, A. Beyer, K. Volz and R. Marschall
J. Mater. Chem. A 6 (2018), pp. 1971 - 1978
High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well lasers emitting at 1.3 µm
C. Fuchs, A. Brüggemann, M. J. Weseloh, C. Berger, C. Möller, S. Reinhard, J. Hader, J. V. Moloney, A. Bäumner, S. W. Koch & W. Stolz
Scientific Reports 8 (2018), 1422
Author Correction: High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well lasers emitting at 1.3 µm
C. Fuchs, A. Brüggemann, M. J. Weseloh, C. Berger, C. Möller, S. Reinhard, J. Hader, J. V. Moloney, A. Bäumner, S. W. Koch & W. Stolz
Scientific Reports 8 (2018), 7891
An experimental approach for real time mass spectrometric CVD gas phase investigations
L. Nattermann, O. Maßmeyer, E. Sterzer, V. Derpmann, H. Y. Chung, W. Stolz and K. Volz
Scientific Reports 8 (2018), 319
Composition determination of multinary III/V semiconductors via STEM HAADF multislice simulations
L. Duschek, A. Beyer, J. O. Oelerich, K. Volz
Ultramicroscopy 185 (2018), pp. 15 - 20
Structure and composition of (GaMn)As formed by MOVPE
K. Volz, M. Lampalzer, A. Schaper, J. Zweck, W. Stolz
in: Microscopy of Semiconducting Materials 2001, Ed. A. G. Cullis
CRC Press (2018), pp. 211 - 214
2017
On The Effects of Column Occupancy and Static Atomic Disorder on the Analysis of Chemical Ordering in Ga(P(1-x)Bix) Compounds
J. Belz, A. Beyer, L. Nattermann, K. Volz
Microscopy and Microanalysis 23 (S1) (2017), pp. 1474 - 1475
Anisotropic relaxation behavior of InGaAs/GaAs selectively grown in narrow trenches on (001) Si substrates
W. Guo, Y. Mols, J. Belz, A. Beyer, K. Volz, A. Schulze, R. Langer, B. Kunert,
J. Appl. Phys. 122 (2) (2017), 025303
(GaIn)(NAs) growth using di-tertiary-butyl-arsano-amine (DTBAA)
E. Sterzer, B. Ringler, L. Nattermann, A. Beyer, C. von Hänisch, W. Stolz, K. Volz,
J. Cryst. Growth 467 (2017), pp. 132 - 136
Impact of detuning on the performance of semiconductor disk lasers
F. Zhang, C. Möller, M. Koch, S. W. Koch, A. Rahimi-Iman, W. Stolz
Appl. Phys. B 123 (12) (2017), 291
Determination of refractive index and direct bandgap of lattice matched BGaP and (BGa)(AsP) materials on exact oriented silicon
M. Volk, and W. Stolz
J. Appl. Phys. 122 (23) (2017), 235702
Surface relaxation of strained Ga(P,As)/GaP heterostructures investigated by HAADF STEM
A. Beyer, L. Duschek, J. Belz, J. O. Oelerich, K. Jandieri and K. Volz
Journal of Microscopy 268 (3) (2017), pp. 239 - 247 (Special Issue: Microscopy of Semi-Conducting Materials)
Formation and Structural Diversity of Organo-Functionalized Tin–Silver Selenide Clusters
N. Rinn, L. Guggolz, K. Gries, K. Volz, J. Senker und S. Dehnen
Chemistry - A European Journal 23 (62) (2017), pp. 15607 - 15611
Three dimensional reconstruction of InGaN nanodisks in GaN nanowires: Improvement of the nanowire sample preparation to avoid missing wedge effects
K. I. Gries, J. Schlechtweg, P. Hille, J. Schörmann, M. Eickhoff, K. Volz
Journal of Crystal Growth 475 (2017), pp. 202 - 207
In Situ Thermal Annealing Transmission Electron Microscopy (TEM) Investigation of III/V Semiconductor Heterostructures Using a Setup for Safe Usage of Toxic and Pyrophoric Gases
R. Straubinger, A. Beyer, T. Ochs, W. Stolz, K. Volz
Microscopy and Microanalysis 23 (4) (2017), pp. 751 - 757
Orientation relationships of Mn0.75Ga0.25As crystallites on and within GaAs determined by scanning nano beam electron diffraction
I. Häusler, P. Moeck, K. Volz and W. Neumann
Crystal Research and Technology 52 (1) (2017), 1600261
Atomic structure of ‘W’-type quantum well heterostructures investigated by aberration-corrected STEM
P. Kükelhan, A. Beyer, C. Fuchs, M. J. Weseloh, S. W. Koch, W. Stolz and K. Volz
Journal of Microscopy 268 (3) (2017), pp. 259 - 268
Towards the Liquid Phase Exfoliation of Bismuth Iodide
N. Heidary, A. Beyer, K. Volz and J. Heine
Dalton Trans 46 (26) (2017), 8359 - 8362
Sub-picosecond acoustic pulses at buried GaP/Si interfaces
K. Ishioka, A. Rustagi, A. Beyer, W. Stolz, K. Volz, U. Höfer, H. Petek, and C. J. Stanton
Appl. Phys. Lett. 111 (6) (2017), 062105
MOVPE growth of (GaIn)As/Ga(AsSb)/(GaIn)As type-II heterostructures on GaAs-substrate for near-infrared laser applications
C. Fuchs, A. Beyer, K. Volz, W. Stolz
J. Cryst. Growth 464 (2017), pp. 201 - 205
Excitation dependence of the photoluminescence lineshape in Ga(NAsP)/GaP multiple quantum well: experiment and Monte-Carlo-simulation
V. V. Valkovskii, M. K. Shakfa, K. Jandieri, P. Ludewig, K. Volz, W. Stolz, M. Koch, S. D. Baranovskii
J. Phys. D: Appl. Phys. 50 (2017), 025105
Fundamental transverse mode operation of a type-II vertical-external-cavity-surface-emitting laser at 1.2 µm
C. Möller, F. Zhang, C. Fuchs, C. Berger, A. Rehn, A. Ruiz Perez, A. Rahimi-Iman, J. Hader, M. Koch, J. V. Moloney, S. W. Koch, W. Stolz
Electron. Lett. 53 (2) (2017), pp. 93 - 94
Pulses interactions in a colliding pulse modelocked vertical external cavity surface emitting laser
A. Laurain, R. Rockmore, H. T. Chan, J. Hader, S. W. Koch, A. Ruiz-Perez, W. Stolz, J. V. Moloney
J. Opt. Soc. Amer. B 34 (2) (2017), pp. 329 - 337
Multi-angle VECSEL cavities for dispersion control and peak-power scaling
C. W. Baker, M. Scheller, A. Laurain, A. Ruiz-Perez, W. Stolz, S. Addamane, G. Balakrishnan, S. W. Koch, R. J. Jones, J. V. Moloney
IEEE Photon. Technol. Lett. 29 (3) (2017), pp. 326 - 629
GaAs1−xBix/GaNyAs1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics
C. A. Broderick, S. Jin, I. P. Marko, K. Hild, P. Ludewig, Z. L. Bushell, W. Stolz, J. M. Rorison, E. P. O’Reilly, K. Volz, and S. J. Sweeney
Sci Rep. 7 (2017), 46371
Microstructural study of codeposited pentacene:perfluoropentacene grown on KCl by TEM techniques
R. Félix, T. Breuer, G. Witte, K. Volz, K. I. Gries
J. Cryst. Growth 471 (2017), pp. 29 – 36
Exploiting strain to enhance the Bi incorporation in GaAs-based III/V semiconductors using MOVPE
L. Nattermann, P. Ludewig, E. Sterzer, K. Volz
J. Cryst. Growth 470 (2017), pp. 15 – 19
Growth of high N containing GaNAs/GaP/BGaAsP multi quantum well structures on Si (0 0 1) substrates
P. Ludewig, M. Diederich, K. Jandieri, W. Stolz
J. Cryst. Growth 467 (2017), pp. 61 – 64
GaP-interlayer formation on epitaxial GaAs(100) surfaces in MOVPE ambient
H. Döscher, P. Hens, A. Beyer, L. Tapfer, K. Volz, W. Stolz
J. Cryst. Growth 464 (2017), pp. 2 – 7
MOVPE growth of Ga(PBi) on GaP and GaP on Si with Bi fractions up to 8%
L. Nattermann, A. Beyer, P. Ludewig, T. Hepp, E. Sterzer, K. Volz
J. Cryst. Growth 463 (2017), pp. 151 – 155
Influence of surface relaxation of strained layers on atomic resolution ADF imaging
A. Beyer, L. Duschek, J. Belz, J. O. Oelerich, K. Jandieri, K. Volz
Ultramicroscopy 181 (2017), pp. 8 – 16
STEMsalabim: A high-performance computing cluster friendly code for scanning transmission electron microscopy image simulations of thin specimens
J. O. Oelerich, L. Duschek, J. Belz, A. Beyer, S. D. Baranovskii, K. Volz
Ultramicroscopy 177 (2017), pp. 91 - 96
Local Bi ordering in MOVPE grown Ga(As,Bi) investigated by high resolution scanning transmission electron microscopy
A. Beyer, N. Knaub, P. Rosenow, K. Jandieri, P. Ludewig, L. Bannow, S. W. Koch, R. Tonner, K. Volz
Applied Materials Today 6 (2017), pp. 22 – 28
MOVPE Grown Gallium Phosphide–Silicon Heterojunction Solar Cells
M. Feifel, J. Ohlmann, J. Benick, T. Rachow, S. Janz, M. Hermle, F. Dimroth, J. Belz, A. Beyer, K. Volz, and D. Lackner
IEEE Journal of Photovoltaics 7 (2) (2017), pp. 502 - 507
Photoconductive LT-GaAs Terahertz Antennas: Correlation Between Surface Quality and Emission Strength
O. M. Abdulmunem, K. I. Hassoon, J. Völkner, M. Mikulics, K. I. Gries, J. C. Balzer
J Infrared Milli Terahz Waves 38 (5) (2017), pp. 574 – 582
Quantitative atomic resolution at interfaces: Subtraction of the background in STEM images with the example of (Ga,In)P/GaAs structure
H. Han, A. Beyer, J. Belz, A. König, W. Stolz, and K. Volz
J. Appl. Phys. 121 (2) (2017), 025301
Recombination dynamics of type-II excitons in (Ga,In)As/GaAs/Ga(As,Sb) heterostructures
S. Gies, B. Holz, C. Fuchs, W. Stolz, and W. Heimbrodt
Nanotechnology 28 (2) (2017), 025701
Codeposited pentacene: perfluoropentacene grown on SiO2: a microstructural study by transmission electron microscopy
R. Félix, K. Volz, and K. I. Gries
J. Cryst. Growth 458 (2017), 87 - 95
2016
Mode-locked semiconductor disk lasers
M. A. Gaafar, A. Rahimi-Iman, K. A. Fedorova, W. Stolz, E. U. Rafailov, and M. Koch
Advances in Optics and Photonics 8 (3) (2016), pp. 370 - 400
Gain spectroscopy of a type-II VECSEL chip
C. Lammers, M. Stein, C. Berger, C. Möller, C. Fuchs, A. Ruiz Perez, A. Rahimi–Iman, J. Hader, J. V. Moloney, W. Stolz, S. W. Koch, and M. Koch
Appl. Phys. Lett. 109 (23) (2016), 232107
Band edge smearing due to compositional disorder in multi-component d-dimensional alloys
M. Wiemer, K. Jandieri, M. Koch, F. Gebhard and S. D. Baranovskii
Physica Status Solidi RRL 10 (12) (2016), pp. 911 - 914
Type-II vertical-external-cavity surface-emitting laser with Watt level output powers at 1.2 µm
C. Möller, C. Fuchs, C. Berger, A. Ruiz Perez, M. Koch, J. Hader, J. V. Moloney, S. W. Koch, W. Stolz
Appl. Phys. Lett. 108 (7) (2016), 071102
Dual-Wavelength Emission From a Serially Connected Two-Chip VECSEL
F. Zhang, M. Gaafar, C. Möller, W. Stolz, M. Koch, A. Rahimi-Iman
IEEE Photonics Technology Letters 28 (8) (2016), pp. 927 - 929
Design and Fabrication of Hybrid Metal Semiconductor Mirror for High-Power VECSEL
K. Gbele, A. Laurain, J. Hader, W. Stolz, J. V. Moloney
IEEE Photonics Technology Letters 28 (7) (2016), pp. 732 - 735
Preparation and Loading Process of Single Crystalline Samples into a Gas Environmental Cell Holder for In Situ Atomic Resolution Scanning Transmission Electron Microscopic Observation
R. Straubinger, A. Beyer, K. Volz
Microscopy and Microanalysis 22 (3) (2016), pp. 515 - 519
MOVPE growth and characterization of quaternary Ga(PAsBi)/GaAs alloys for optoelectronic applications
L. Nattermann, P. Ludewig, N. Knaub, N. W. Rosemann, T. Hepp, E. Sterzer, S. R. Jin, K. Hild, S. Chatterjee, S. J. Sweeney, W. Stolz, K. Volz
Applied Materials Today 5 (2016), pp. 209 – 214
Thermomigration and Soret effect in NaxCoO2 as thermoelectric material: Preparation and characterization of sodium cobaltate thin films
C. Schneider, P. Schichtel, B. Mogwitz, R. Straubinger, A. Beyer, M. Rohnke, K. Volz and J. Janek
Phys. Status Solidi A 213 (5) (2016), pp. 1284 - 1295 (Back cover p. 1368)
Coherent phonon spectroscopy characterization of electronic bands at buried semiconductor heterointerfaces
K. Ishioka, K. Brixius, A. Beyer, A. Rustagi, C. J. Stanton, W. Stolz, K. Volz, U. Höfer and H. Petek
Appl. Phys. Lett. 108 (5) (2016), 051607
Materials characterisation by angle-resolved scanning transmission electron microscopy
K. Müller-Caspary, O. Oppermann, T. Grieb, F. F. Krause, A. Rosenauer, M. Schowalter, T. Mehrtens, A. Beyer, K. Volz, P. Potapov
Scientific Reports 6 (2016), 37146
Optical gain in GaAsBi/GaAs quantum well diode lasers
I. P. Marko, C. A. Broderick, S. Jin, P. Ludewig, W. Stolz, K. Volz, J. M. Rorison, E. P. O’Reilly, S. J. Sweeney
Scientific Reports 6 (2016), 28863
Microstructural Analysis of Perfluoropentacene Films on Graphene and Graphite: Interface-Mediated Alignment and Island Formation
R. Félix, T. Breuer, P. Rotter, F. Widdascheck, B. Eckhardt, G. Witte, K. Volz and K. I. Gries
Cryst. Growth & Design 16 (12) (2016), pp 6941 – 6950
Electrical injection type-II (GaIn)As/Ga AsSb)/(GaIn)As single 'W'-quantum well laser at 1.2 μm
C. Fuchs, C. Berger, C. Möller, M. Weseloh, S. Reinhard, J. Hader, J. V. Moloney, S. W. Koch, and W. Stolz
Electronic Letters 52 (22) (2016), pp. 1875 - 1877
Band Offset in (Ga,In)As/Ga(As,Sb) Heterostructures
S. Gies, M. J. Weseloh, C. Fuchs, W. Stolz, J. Hader, J. V. Moloney, S. W. Koch, W. Heimbrodt
J. Appl. Phys. 120 (20) (2016), 204303
Impedance spectroscopic study of the charge transfer resistance at the interface between a LiNi0.5Mn1.5O4 high-voltage cathode film and a LiNbO3 coating film
M. Gellert, K. I. Gries, J. Sann, E. Pfeifer, K. Volz, B. Roling
Solid State Ionics 287 (2016), pp. 8 – 12
Novel nitrogen/gallium precursor [Ga(bdma)H2] for MOVPE
E. Sterzer, A. Beyer, L. Nattermann, W. Schorn, K. Schlechter, S. Pulz, J. Sundermeyer, W. Stolz, K. Volz
Journal of Crystal Growth 454 (2016), pp. 173 – 179
Colliding pulse mode locking of vertical-external-cavity surface-emitting laser
A. Laurain, D. Marah, R. Rockmore, J. McInerney, J. Hader, A. Ruiz Perez, W. Stolz, and J. V. Moloney
Optica 3 (7) (2016), pp. 781 - 784
Surface Chemistry of tert-Butylphosphine (TBP) on Si(001) in the Nucleation Phase of Thin-Film Growth
A. Stegmüller, K. Werner, M. Reutzel, A. Beyer, P. Rosenow, U. Höfer, W. Stolz, K. Volz, M. Dürr, and R. Tonner
Chem. Eur. J. 22 (42) (2016), pp. 14920 - 14928
Influence of spatial and temporal coherences on atomic resolution high angle annular dark field imaging
A. Beyer, J. Belz, N. Knaub, K. Jandieri, K. Volz
Ultramicroscopy 169 (2016), pp. 1 – 10
A highly efficient directional molecular white-light emitter driven by a continuous-wave laser diode
N. Rosemann, J. P. Eußner, A. Beyer, S. W. Koch, K. Volz, S. Dehnen, S. Chatterjee
Science 352 (6291) (2016), pp. 1301 - 1304
Interplay of boron localized states and electron transport in Bx Ga1-x As0.11 P0.89:Te
L. Ostheim, P. J. Klar, S. Liebich, P. Ludewig, K. Volz and W. Stolz
Semicond. Sci. Technol. 31 (7) (2016), 07LT01
Local sample thickness determination via scanning transmission electron microscopy defocus series
A. Beyer, R. Straubinger, J. Belz and K. Volz
Journal of Microscopy 262 (2) (2016), pp. 171 – 177
Pyramidal Structure Formation at the Interface between III/V Semiconductors and Silicon
A. Beyer, A. Stegmüller, J. O. Oelerich, K. Jandieri, K. Werner, G. Mette, W. Stolz, S. D. Baranovskii, R. Tonner, and K. Volz
Chem. Mater. 28 (10) (2016), pp. 3265 – 3275
Influence of growth temperature and disorder on spectral and temporal properties of Ga(NAsP) heterostructures
R. Woscholski, S. Gies, M. Wiemer, M. K. Shakfa, A. Rahimi-Iman, P. Ludewig, S. Reinhard, K. Jandieri, S. D. Baranovskii, W. Heimbrodt, K. Volz, W. Stolz and M. Koch
J. Appl. Phys. 119 (14) (2016), 145707
Charge transfer luminescence in (GaIn)As/GaAs/Ga(NAs) double quantum wells
P. Springer, S. Gies, P. Hens, C. Fuchs, H. Han, J. Hader, J. V. Moloney, W. Stolz, K. Volz, S. W. Koch, and W. Heimbrodt
Journal of Luminescence 175 (2016), pp. 255 - 259
Carrier dynamics in Ga(NAsP)/Si multi-quantum well heterostructures with varying well thickness
M. K. Shakfa, R. Woscholski, S. Gies, T. Wegele, M. Wiemer, P. Ludewig, K. Jandieri, S. D. Baranovskii, W. Stolz, K. Volz, W. Heimbrodt, M. Koch
Superlattices and Microstructures 93 (2016), pp. 67 - 72
Efficient nitrogen incorporation in GaAs using novel metal organic As-N precursor di-tertiary-butyl-arsano-amine (DTBAA)
E. Sterzer, A. Beyer, L. Duschek, L. Nattermann, B. Ringler, B. Leube, A. Stegmüller, R. Tonner, C. von Hänisch, W. Stolz, K. Volz
Journal of Crystal Growth 439 (2016), pp. 19 – 27
Direct Investigation of (Sub-) Surface Preparation Artifacts in GaAs-based materials by FIB Sectioning
J. Belz, A. Beyer, T. Torunski, W. Stolz, K. Volz
Ultramicroscopy 163 (2016), pp. 19 - 30
FIB Plan View Preparation and Electron Tomography of Ga-Containing Droplets Induced by Melt-Back Etching in Si
K. I. Gries, K. Werner, A. Beyer, W. Stolz and K. Volz
Microscopy and Microanalysis 22 (2016), pp. 131 - 139
Correlation of the nanostructure with optoelectronic properties during rapid thermal annealing of Ga(NAsP) quantum wells grown on Si(001) substrates
T. Wegele, A. Beyer, S. Gies, M. Zimprich, W. Heimbrodt, W. Stolz and K. Volz
J. Appl. Phys. 119 (2) (2016), 025705
Interface morphology and composition of Ga(NAsP) quantum well structures for monolithically integrated LASERs on silicon substrates
T. Wegele, A. Beyer, P. Ludewig, P. Rosenow, L. Duschek, K. Jandieri, R. Tonner, W. Stolz and K. Volz
J. Phys. D. Appl. Phys. 49 (7) (2016), 075108
MOVPE growth studies of Ga(NAsP)/(BGa)(AsP) multi quantum well heterostructures (MQWH) for the monolithic integration of laser structures on (001) Si-substrates
P. Ludewig, S. Reinhard, K. Jandieri, T. Wegele, A. Beyer, L. Tapfer, K. Volz, W. Stolz
Journal of Crystal Growth 438 (2016), pp. 63 - 69
Quantification of Bi distribution in MOVPE-grown Ga(AsBi) via HAADF STEM
N. Knaub, A. Beyer, T. Wegele, P. Ludewig, K. Volz
Journal of Crystal Growth 433 (2016), pp. 89 – 96
Time-resolved photoluminescence of Ga(NAsP) multiple quantum wells grown on Si substrate: effects of rapid thermal annealing
R. Woscholski, M. K. Shakfa, S. Gies, M. Wiemer, A. Rahimi-Iman, M. Zimprich, S. Reinhard, K. Jandieri, S. D. Baranovskii, W. Heimbrodt, K. Volz, W. Stolz, M. Koch
Thin Solid Films 613 (2016), pp. 55 – 582011 - 2015
2015
The Thermal Resistance of High-Power Semiconductor Disk Lasers
B. Heinen, C. Möller, K. Jandieri, B. Kunert, M. Koch, W. Stolz
IEEE Journal of Quantum Electronics 51 (5) (2015), 2400109
Antiphase Noise Dynamics in a Dual-Wavelength Vertical-External-Cavity Surface-Emitting Laser
M. Wichmann, G. Town, J. Quante, M. Gaafar, A. Rahimi-Iman, W. Stolz, S. W. Koch, M. Koch
IEEE Photonics Technology Letters 27 (19) (2015), pp. 2039 - 2042
Atomically ordered (Mn,Ga)As crystallites on and within GaAs
I. Häusler, P. Moeck, K. Volz and W. Neumann
Cryst. Res. Technol. 50 (12) (2015), pp. 967 - 973
Novel type-II material system for laser applications in the near-infrared regime
C. Berger, C. Möller, P. Hens, C. Fuchs, W. Stolz, S. W. Koch, A. Ruiz Perez, J. Hader and J. V. Moloney
AIP Advances 5 (4) (2015), 047105
Metastable cubic zinc-blende III/V semiconductors: Growth and structural characteristics
Review
A. Beyer, W. Stolz, K. Volz
Progress in Crystal Growth and Characterization of Materials 61 (2–4) (2015), pp. 46 – 62
Analysis of optical scattering losses in vertical-external-cavity surface-emitting lasers
D. Al Nakdali, M. K. Shakfa, B. Heinen, B. Kunert, W. Stolz, S. W. Koch, J. Hader, J. V. Moloney, A. Rahimi-Iman, M. Koch
Appl. Phys. B. 120 (1) (2015), pp. 41 - 46
Two-energy-scale model for description of the thermal quenching of photoluminescence in disordered Ga(As,Bi)
M. K. Shakfa, M. Wiemer, P. Ludewig, K. Jandieri, K. Volz, W. Stolz, S. D. Baranovskii and M. Koch
phys. stat. sol. (c) 12 (8) (2015), pp. 1187 - 1190
Excitonic transitions in highly efficient (GaIn)As/Ga(AsSb) type-II quantum-well structures
S. Gies, C. Kruska, C. Berger, P. Hens, C. Fuchs, A. Ruiz Perez, N. W. Rosemann, J. Veletas, S. Chatterjee, W. Stolz, S. W. Koch, J. Hader, J. V. Moloney, and W. Heimbrodt
Appl. Phys. Lett. 107 (2015) 182104
Energy scale of compositional disorder in Ga(AsBi)
M. K. Shakfa, K. Jandieri, M. Wiemer, P. Ludewig, K. Volz, W. Stolz, S. D. Baranovskii and M. Koch
J. Phys. D. Appl. Phys. 48 (42) (2015), 425101
Determination of type-I band offsets in GaBixAs1–x quantum wells using polarisation-resolved photovoltage spectroscopy and 12-band k.p calculations
C. A. Broderick, P. E. Harnedy, P. Ludewig, Z. L. Bushell, K. Volz, R. J. Manning and E. P. O'Reilly
) (2015), 094009
Single-photon emission at a rate of 143MHz from a deterministic quantum-dot microlens triggered by a mode-locked vertical-external-cavity surface-emitting laser
A. Schlehahn, M. Gaafar, M. Vaupel, M. Gschrey, P. Schnauber, J.-H. Schulze, S. Rodt, A. Strittmatter, W. Stolz, A. Rahimi-Iman, T. Heindel, M. Koch, and S. Reitzenstein
Appl. Phys. Lett. 107 (4) (2015), 041105
Compositional dependence of the band gap in Ga(NAsP) quantum well heterostructures
K. Jandieri, P. Ludewig, T. Wegele, A. Beyer, B. Kunert, P. Springer, S. D. Baranovskii, S. W. Koch, K. Volz and W. Stolz
J. Appl. Phys. 118 (6) (2015), 065701
Quantitative characterization of the interface roughness of (GaIn)As quantum wells by high resolution STEM
H. Han, A. Beyer, K. Jandieri, K. I. Gries, L. Duschek, W. Stolz, K. Volz
Micron 79 (2015), pp. 1 – 7
Self-assembly of ordered wurtzite/rock salt heterostructures—A new view on phase separation in MgxZn1−xO
K. I. Gries, T. A. Wassner, S. Vogel, J. Bruckbauer, I. Häusler, R. Straubinger, A. Beyer, A. Chernikov, B. Laumer, M. Kracht, C. Heiliger, J. Janek, S. Chatterjee, K. Volz and M. Eickhoff
J. Appl. Phys. 118 (4) (2015), 045706
MOVPE growth mechanisms of dilute bismide III/V alloys
P. Ludewig, L. Nattermann, W. Stolz and K. Volz
Semicond. Sci. Technol. 30 (9) (2015), 094017
Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers
I. P. Marko, S. R. Jin, K. Hild, Z. Batool, Z. L. Bushell, P. Ludewig, W. Stolz, K. Volz, R. Butkutė, V. Pačebutas, A. Geizutis, A. Krotkus and S. J. Sweeney
Semicond. Sci. Technol. 30 (9) (2015), 094008
MOVPE growth of Ga(AsBi)/GaAs using different metalorganic precursors
L. Nattermann, P. Ludewig, L. Meckbach, B. Ringler, D. Keiper, C. von Hänisch, W. Stolz, K. Volz
J. Cryst. Growth 426 (2015), pp. 54 - 60
TEM of Sensitive Organic Materials: Imaging and Analysis with Reduced Beam Damage
K. Gries, B. Haas, I. Häusler, T. Breuer, G. Witte, K. Volz
Imaging & Microscopy 17 (1) (2015), pp. 46 - 48
reprinted (adapted) with permission from Cryst. Growth Des. 14 (6) (2014), pp. 3010 – 3014 (Copyright (2014) Amercian Chemical Society)
Charge Transfer across the Interface between LiNi0.5Mn1.5O4 High-Voltage Cathode Films and Solid Electrolyte Films
M. Gellert, K. I. Gries, J. Zakel, S. Kranz, S. Bradler, E. Hornberger, S. Müller, C. Yada, F. Rosciano, K. Volz and B. Roling
J. Electrochem. Soc. 162 (4) (2015), A754 - A759
Interface engineering and characterization at the atomic-scale of pure and mixed ion layer gas reaction buffer layers in chalcopyrite thin-film solar cells
O. Cojocaru-Mirédin, Y. Fu, A. Kostka, R. Sáez-Araoz, A. Beyer, N. Knaub, K. Volz, C.-H. Fischer, D. Raabe
Progress in Photovoltaics: Research and Applications 23 (6) (2015), pp. 705 – 716
Thermal quenching of photoluminescence in Ga(AsBi)
M. K. Shakfa, M. Wiemer, P. Ludewig, K. Jandieri, K. Volz, W. Stolz, S. D. Baranovskii and M. Koch
J. Appl. Phys. 117 (2015), 025709
Growth of III/V's on Silicon: Nitrides, Phosphides, Arsenides and Antimonides
K. Volz, W. Stolz, A. Dadgar, A. Krost
in: Handbook of Crystal Growth (2nd Ed.): Thin Films and Epitaxy (2015), Edited by Thomas F. Kuech, pp. 1249 – 1300, ISBN: 978-0-444-63304-0
2014
High-Power Quantum-Dot Vertical-External-Cavity Surface-Emitting Laser Exceeding 8 W
D. Al Nakdali, M. K. Shakfa, M. Gaafar, M. Butkus, K. A. Fedorova, M. Zulonas, M. Wichmann, F. Zhang, B. Heinen, A. Rahimi-Iman, W. Stolz, E. U. Rafailov, M. Koch
IEEE Photon. Technol. Lett. 26 (15) (2014), pp. 1561 - 1564
Bipolar Electric-Field Enhanced Trapping and Detrapping of Mobile Donors in BiFeO3 Memristors
T. You, N. Du, S. Slesazeck, T. Mikolajick, G. Li, D. Bürger, I. Skorupa, H. Stöcker, B. Abendroth, A. Beyer, K. Volz, O. G. Schmidt, and H. Schmidt
ACS Appl. Mater. Interfaces 6 (22) (2014), pp. 19758 - 19765
Multi-quantum well Ga(AsBi)/GaAs laser diodes with more than 6% of bismuth
R. Butkutė, A. Geižutis, V. Pačebutas, B. Čechavičius, V. Bukauskas, R. Kundrotas, P. Ludewig, K. Volz, A. Krotkus
Electronics Letters 50 (16) (2014), pp. 1155 - 1157
Physical properties and optimization of GaBiAs/(Al)GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi
I. P. Marko, P. Ludewig, Z. L. Bushell, S. R. Jin, K. Hild, Z. Batool, S. Reinhard, L. Nattermann, W. Stolz, K. Volz and S. J. Sweeney
J. Phys. D: Appl. Phys. 47 (34) (2014), 345103
Effect of boron localized states on the conduction band transport in BxGa1− xP
S. Petznick, L. Ostheim, P. J. Klar, S. Liebich, K. Volz and W. Stolz
Appl. Phys. Lett. 105 (2014), 222105
Disturbing the coherent dynamics of an excitonic polarization with strong terahertz fields
M. J. Drexler, R. Woscholski, S. Lippert, W. Stolz, A. Rahimi-Iman, and M. Koch
Phys. Rev. B 90 (19) (2014), 195304
Structural characteristics of gallium metal deposited on Si (0 0 1) by MOCVD
K. Werner, A. Beyer, J. O. Oelerich, S. D. Baranovskii, W. Stolz, K. Volz
Journal of Crystal Growth 405 (2014), pp. 102 - 109
Investigation of the microstructure of metallic droplets on Ga(AsBi)/GaAs
E. Sterzer, N. Knaub, P. Ludewig, R. Straubinger, A. Beyer, K. Volz
Journal of Crystal Growth 408 (2014), pp. 71 - 77
Simultaneous Quantification of Indium and Nitrogen Concentration in InGaNAs Using HAADF-STEM
T. Grieb, K. Müller, E. Cadel, A. Beyer, M. Schowalter, E. Talbot, K. Volz and A. Rosenauer
Microscopy and Microanalysis 20 (6) (2014), pp. 1740 - 1752
Migration-enhanced epitaxy of thin GaAsBi layers
R. Butkutė, V. Pačebutas, A. Krotkus, N. Knaub, and K. Volz
Lith. J. Phys. 54 (2) (2014), pp. 125 - 129
Self-mode-locking semiconductor disk laser
M. Gaafar, P. Richter, H. Keskin, C. Möller, M. Wichmann, W. Stolz, A. Rahimi-Iman, and M. Koch
Optics Express 22 (23) (2014), pp. 28390 - 28399
Harmonic self-mode-locking of optically pumped semiconductor disc laser
M. Gaafar, C. Möller, M. Wichmann, B. Heinen, B. Kunert, A. Rahimi-Iman, W. Stolz and M. Koch
Electronic Letters 50 (7) (2014), pp. 542 - 543
Mapping nanomechanical properties of freshly grown, native, interlamellar organic sheets on flat pearl nacre
M. Launspach, K. I. Gries, F. Heinemann, A. Hübner, M. Fritz, M. Radmacher
Acta Biomaterialia 10 (9) (2014), 3986 – 3996
A 23-watt single-frequency vertical-external-cavity surface-emitting laser
F. Zhang, B. Heinen, M. Wichmann, C. Möller, B. Kunert, A. Rahimi-Iman, W. Stolz, M. Koch
Optics Exress 22 (11) (2014), 12817 - 12822
Annealing effects on the composition and disorder of Ga(N,As,P) quantum wells on silicon substrates for laser application
S. Gies, M. Zimprich, T. Wegele, C. Kruska, A. Beyer, W. Stolz, K. Volz and W. Heimbrodt
Journal of Crystal Growth 402 (2014), pp. 169 - 174
Microstructural Characterization of Organic Heterostructures by (Transmission) Electron Microscopy
B. Haas, K. I. Gries, T. Breuer, I. Häusler, G. Witte, and K. Volz
Cryst. Growth Des. 14 (6) (2014), pp. 3010 – 3014
LiNi0.5Mn1.5O4Thin-Film Cathodes on Gold-Coated Stainless Steel Substrates: Formation of Interlayers and Electrochemical Properties
M. Gellert, K. I. Gries, J. Zakel, A. Ott, S. Spannenberger, C. Yada, F. Rosciano, K. Volz, B. Roling
Electrochimica Acta 133 (2014), pp. 146 – 152
Luminescence properties of dilute bismide systems
B. Breddermann, A. Bäumner, S. W. Koch, P. Ludewig, W. Stolz, K. Volz, J. Hader, J. V. Moloney, C. A. Broderick, E. P. O'Reilly
Journal of Luminescence 154 (2014), pp. 95 - 98
Growth of Ga(AsBi) on GaAs by continuous flow MOVPE
P. Ludewig, Z. L. Bushell, L. Nattermann, N. Knaub, W. Stolz, K. Volz
Journal of Crystal Growth 396 (2014), pp. 95 - 99
Growth and characterisation of Ga(NAsBi) alloy by metal organic vapour phase epitaxy
Z. L. Bushell, P. Ludewig, N. Knaub, Z. Batool, K. Hild, W. Stolz, S. J. Sweeney, K. Volz
Journal of Crystal Growth 396 (2014), pp. 79 - 84
Optical noise of stabilized high-power single frequency optically pumped semiconductor laser
A. Laurain, C. Mart, J. Hader, J. V. Moloney, B. Kunert, and W. Stolz
Optics Letters 39 (6) (2014), pp. 1573 - 1576
Comparison of Direct Growth and Wafer Bonding for the Fabrication of GaInP/GaAs Dual-Junction Solar Cells on Silicon
T. Roesener, S. Essig, C. Weuffen, A. Wekkeli, E. Oliva, G. Siefer, K. Volz, T. Hannappel, D. Haussler, W. Jager, A. W. Bett
IEEE Journal of Photovoltaics 4 (2) (2014), pp. 620 - 625
15W Single Frequency Optically Pumped Semiconductor Laser With Sub-Megahertz Linewidth
A. Laurain, C. Mart, J. Hader, J. V. Moloney, B. Kunert, W. Stolz
IEEE Photonics Technology Letters 26 (2) (2014), pp. 131 - 133
2013
Evolution of multi-mode operation in vertical-external-cavity surface-emitting lasers
M. Wichmann, M. K. Shakfa, F. Zhang, B. Heinen, M. Scheller, A. Rahimi-Iman, W. Stolz, J. V. Moloney, S. W. Koch, and M. Koch
Optics Express 21 (26) (2013), pp. 31940 - 31950
In situ spectroscopy of high-power vertical-external-cavity surface-emitting lasers
A. Chernikov, M. Wichmann, J. Herrmann, B. Heinen, M. K. Shakfa, S. Chatterjee, S. W. Koch, B. Kunert, W. Stolz, T.-L. Wang, Y. Kaneda, M. Scheller, M. J. Yarborough, J. Hader, J. V. Moloney, M. Koch
physica status solidi (b) 250 (9) (2013), pp. 1781 – 1784
Chapter 7 – Bismuth-containing III–V semiconductors: Epitaxial growth and physical properties
Z. Batool, S. Chatterjee, A. Chernikov, A. Duzik, R. Fritz, C. Gogineni, K. Hild, T. J. C. Hosea, S. Imhof, S. R. Johnson, Z. Jiang, S. Jin, M. Koch, S. W. Koch, K. Kolata, R. B. Lewis, X. Lu, M. Masnadi-Shirazi, J. Mirecki Millunchick, P. M. Mooney, N. A. Riordan, O. Rubel, S. J. Sweeney, J. C. Thomas, A. Thränhardt, T. Tiedje, K. Volz
in: Molecular Beam Epitaxy (2013), pp. 139 – 158
Temperature-dependent quantum efficiency of Ga(N,As,P) quantum wells
Applied Physics Letters 103 (25) (2013), 252105
Atomic structure of (110) anti-phase boundaries in GaP on Si(001)
A. Beyer, B. Haas, K. I. Gries, K. Werner, M. Luysberg, W. Stolz, and K. Volz
Applied Physics Letters 103 (3) (2013), 032107
Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser
P. Ludewig, N. Knaub, N. Hossein, S. Reinhard, L. Nattermann, I. P. Marko, S. R. Jin, K. Hild, S. Chatterjee, W. Stolz, S. J. Sweeney, and K. Volz
Applied Physics Letters 102 (24) (2013), 242115
Quantitative chemical evaluation of dilute GaNAs using ADF STEM: Avoiding surface strain induced artifacts
T. Grieb, K. Mueller, R. Fritz, V. Grillo, M. Schowalter, K. Volz, A. Rosenauer
Ultramicroscopy 129 (2013), pp. 1 - 9
In(SAr)(3) As a Building Block for 3D and Helical Coordination Polymers
J. Heine, M. Holynska, M. Reuter, B. Haas, S. Chatterjee, M. Koch, K. I. Gries, K. Volz, S. Dehnen
Crystal Growth & Design 13 (3) (2013), pp. 1252 - 1259
Growth of (BGa)As, (BGa)P, (BGa)(AsP) and (BGaIn)P by MOVPE
N. Sommer, R. Buss, J. Ohlmann, T. Wegele, C. Jurecka, S. Liebich, B. Kunert, W. Stolz, K. Volz
J. Cryst. Growth 370 (2013), pp. 191 - 196
MOVPE growth of Ga(AsBi)/GaAs multi quantum well structures
P. Ludewig, N. Knaub, W. Stolz, K. Volz
J. Cryst. Growth 370 (2013), pp. 186 - 190
4.35 kW peak power femtosecond pulse mode-locked VECSEL for supercontinuum generation
K. G. Wilcox, A. C. Tropper, H. E. Beere, D. A. Ritchie, B. Kunert, B. Heinen, and W. Stolz
Optics Express 21 (2) (2013), pp. 1599 - 1605
On the measurement of the thermal impedance in vertical-external-cavity surface-emitting lasers
J. Hader, T.-L. Wang, J. V. Moloney, B. Heinen, M. Koch, S. W. Koch, B. Kunert, and W. Stolz
J. Appl. Phys. 113 (15) (2013), 153102
Double-scaled disorder in Ga(N,As,P)/GaP multiquantum wells
C. Karcher, K. Jandieri, B. Kunert, R. Fritz, K. Volz, W. Stolz, F. Gebhard, S. D. Baranovskii, W. Heimbrodt
Journal of Luminescence 133 (2013), pp. 125 - 128
Nonexponential photoluminescence transients in a Ga(NAsP) lattice matched to a (001) silicon substrate
K. Jandieri, B. Kunert, S. Liebich, M. Zimprich, K. Volz, W. Stolz, F. Gebhard, and S. D. Baranovskii
Phys. Rev. B 87 (3) (2013), 035303
STEM strain analysis at sub-nanometre scale using millisecond frames from a direct electron read-out CCD camera
K. Müller, H. Ryll, I. Ordavo, M. Schowalter, J. Zweck, H. Soltau, S. Ihle, L. Strüder, K. Volz, P. Potapov and A. Rosenauer
Journal of Physics: Conf. Ser. 471 (1) (2013), 012024
2012
Scanning transmission electron microscopy strain measurement from millisecond frames of a direct electron charge coupled device
K. Müller, H. Ryll, I. Ordavo, S. Ihle, L. Strüder, K. Volz, J. Zweck, H. Soltau, and A. Rosenauer
Appl. Phys. Lett. 101 (21) (2012), 212110
Grain Boundaries in a Lithium Aluminum Titanium Phosphate-Type Fast Lithium Ion Conducting Glass Ceramic: Microstructure and Nonlinear Ion Transport Properties
M. Gellert, K. I. Gries , Ch. Yada, F. Rosciano, K. Volz, and B. Roling
J. Phys. Chem. C 116 (43) (2012), pp. 22675 – 22678
Strain Measurement in Semiconductor Heterostructures by Scanning Transmission Electron Microscopy
K. Müller, A. Rosenauer, M. Schowalter, J. Zweck, R. Fritz and K. Volz
Microscopy and Microanalysis 18 (5) (2012), pp. 995 - 1009
Measurement of Composition and Strain by STEM
A. Rosenauer, K. Müller, T. Mehrtens, M. Schowalter, J. Zweck, R. Fritz and K. Volz
Microscopy and Microanalysis 18 (S2) (2012), pp. 1804 - 1805
Monolithic integration of high electron mobility InAs-based heterostructure on exact (001) Silicon using a GaSb/GaP accommodation layer
, i, , , , , , , , , and Appl. Phys. Lett. 101 (14) (2012), 142111
Quantum design strategy pushes high-power vertical-external-cavity surface-emitting lasers beyond 100 W
T.-L. Wang, B. Heinen, J. Hader, C. Dineen, M. Sparenberg, A. Weber, B. Kunert, S. W. Koch, J. V. Moloney, M. Koch, W. Stolz
Laser & Photonics Reviews 6 (5) (2012), pp. L12 – L14
Efficiency-limiting processes in Ga(NAsP)/GaP quantum well lasers
N. Hossain, S. R. Jin, S. Liebich, M. Zimprich, K. Volz, B. Kunert, W. Stolz, and S. J. Sweeney
Appl. Phys. Lett. 101 (1) (2012), 011107
Energy scaling of compositional disorder in Ga(N,P,As)/GaP quantum well structures
K. Jandieri, M. K. Shakfa, S. Liebich, M. Zimprich, B. Kunert, C. Karcher, A. Chernikov, K. Volz, W. Stolz, M. Koch, S. Chatterjee, W. Heimbrodt, F. Gebhard, and S. D. Baranovskii
Phys. Rev. B 86 (12) (2012), 125318
Ultra-long palladium nanoworms by polymer grafts
S. Bokern, K. Volz, S. Agarwal, A. Greiner
Journal of Nanoparticle Research 14 (8) (2012), 1041
Growth study of nonpolar Zn1-xMgxO epitaxial films on a-plane bulk ZnO by plasma-assisted molecular beam epitaxy
B. Laumer, F. Schuster, M. Stutzmann, A. Bergmaier, G. Dollinger, S. Vogel, K. I. Gries, K. Volz, and M. Eickhoff
Appl. Phys. Lett. 101 (12) (2012), 122106
Passively modelocked VECSEL emitting 682 fs pulses with 5.1W of average output power
M. Scheller, T.-L. Wang, B. Kunert, W. Stolz, S. W. Koch, J. V. Moloney
Electronics Letters 48 (10) (2012), pp. 588 - 589
106W continuous-wave output power from a vertical-external-cavity surface-emitting laser (VECSEL)
B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, W. Stolz
Electronics Letters 48 (9) (2012), pp. 516 - 517
Methods of Electron Crystallography as Tools for Materials Analysis
W. Neumann, H. Kirmse, I. Häusler, C. Grosse, P. Moeck, S. Rouvimov, M. Beekman, R. Atkins, D. C. Johnson, K. Volz
Solid State Phenomena 186 (1) (2012), pp. 1 - 6
Synthesis and Characterization of Colloidal Fluorescent Silver Nanoclusters
S. Huang, C. Pfeiffer, J. Hollmann, S. Friede, J. Jin-Ching Chen, A. Beyer, B. Haas, K. Volz, W. Heimbrodt, J. M. Montenegro Martos, W. Chang, and W. J. Parak
Langmuir 28 (24) (2012), pp. 8915 - 8919
Temperature and pump power dependent photoluminescence characterization of MBE grown GaAsBi on GaAs
N. A. Riordan, C. Gogineni, S. R. Johnson, X. Lu, T. Tiedje, D. Ding, Y.-H. Zhang, R. Fritz, K. Kolata, S. Chatterjee, K. Volz, S. W. Koch
Journal of Materials Science: Materials in Electronics 23 (10) (2012), pp. 1799 - 1804
Determination of the chemical composition of GaNAs using STEM HAADF imaging and STEM strain state analysis
T. Grieb, K. Müller, R. Fritz, M. Schowalter, N. Neugebohrn, N. Knaub, K. Volz, A. Rosenauer
Ultramicroscopy 117 (2012), pp. 15 – 23
High Peak Power Operation of a 1- μ m GaAs-Based Optically Pumped Semiconductor Laser
A. Laurain, T.-L. Wang, M. J. Yarborough, J. Hader, J. V. Moloney, S. W. Koch, B. Kunert, W. Stolz
IEEE Photonics Technology Letters 24 (5) (2012), pp. 380 - 382
On the Measurement of the Thermal Resistance of Vertical-External-Cavity Surface-Emitting Lasers (VECSELs)
B. Heinen, F. Zhang, M. Sparenberg, B. Kunert, M. Koch, and W. Stolz
IEEE Journal of Quantum Electronics 48 (7) (2012), pp. 934 - 940
High room-temperature optical gain in Ga(NAsP)/Si heterostructures
N. Koukourakis, C. Bückers, D. A. Funke, N. C. Gerhardt, S. Liebich, S. Chatterjee, C. Lange, M. Zimprich, K. Volz, W. Stolz, B. Kunert, S. W. Koch, and M. R. Hofmann
Appl. Phys. Lett. 100 (9) (2012), 092107
GaP heteroepitaxy on Si(001): Correlation of Si-surface structure, GaP growth conditions, and Si-III/V interface structure
A. Beyer, J. Ohlmann, S. Liebich, H. Heim, G. Witte, W. Stolz, K. Volz
J. Appl. Phys. 111 (8) (2012), 083534
Parameters for temperature dependence of mean-square displacements for B-, Bi- and Tl-containing binary III-V compounds
M. Schowalter, A. Rosenauer and K. Volz
Acta Crystallographica A 68 (3) (2012), pp. 319 - 323
Thermal management in high-power vertical-external-cavity surface-emitting lasers
A. Chernikov, J. Herrmann, M. Scheller, M. Koch, B. Kunert, W. Stolz, S. Chatterjee, S. W. Koch, T.-L. Wang, Y. Kaneda, M. J. Yarborough, J. Hader, and J. V. Moloney
Quantum Electronics and Laser Science Conference, San Jose, California (2012)
Compositional disorder anomalies in Ga(N,P,As)/GaP quantum well structures
K. Jandieri, S. D. Baranovskii, B. Kunert, M. Zimprich, S. Liebich, K. Volz, W. Stolz, S. Chatterjee, C. Karcher, W. Heimbrodt and F. Gebhard
Journal of Physics: Conf. Ser. 376 (1) (2012), 012021
2011
Modal gain and time-resolved photoluminescence of Ga (NAsP) heterostructures pseudomorphically grown on silicon (001) substrate
N. Koukourakis, D. A. Funke, N. C. Gerhardt, M. R. Hofmann, B. Kunert, S. Liebich, D. Trusheim, M. Zimprich, C. Bückers, S. W. Koch, K. Volz, W. Stolz
Conf. on Lasers and Electro-Optics (CLEO), Baltimore, USA (2011), pp. 1 - 2
Toward Simultaneous Assessment of In and N in InGaAsN Alloys by Quantitative STEM-ADF Imaging
V. Grillo, K. Müller, F. Glas, K. Volz and A. Rosenauer
Microscopy and Microanalysis 17 (Suppl. 2) (2011), pp. 1862 - 1863
Investigation of the GaP/Si Interface by High-Resolution Scanning Transmission Electron Microscopy
A. Beyer, J. Ohlmann, M. Luysberg and K. Volz
Microscopy and Microanalysis 17 (Suppl. 2) (2011), pp. 1390 - 1391
Carrier dynamics in (ZnMg)O alloy materials
A. Chernikov, S. Horst, M. Koch, K. Volz, S. Chatterjee, S. W. Koch, T. A. Wassner, B. Laumer, M. Eickhoff
physica status solidi (c) 8 (4) (2011), pp. 1149 – 1152
Application of transmission electron microscopy for microstructural characterization of perfluoropentacene thin films
B. Haas, A. Beyer, W. Witte, T. Breuer, G. Witte, and K. Volz
J. Appl. Phys. 110 (7) (2011), 073514
Heat Management in High-Power Vertical-External-Cavity Surface-Emitting Lasers
A. Chernikov, J. Herrmann, M. Koch, B. Kunert, W. Stolz, S. Chatterjee, S. W. Koch, T.-L. Wang, Y. Kaneda, J. M. Yarborough, J. Hader, J. V. Moloney
IEEE Journal of Selected Topics in Quantum Electronics 17 (6) (2011), pp. 1772 - 1778
VECSEL Optimization Using Microscopic Many-Body Physics
J. Hader, T.-L. Wang; J. M. Yarborough, C. A. Dineen, Y. Kaneda, J. V. Moloney, B. Kunert, W. Stolz, S. W. Koch
IEEE Journal of Selected Topics in Quantum Electronics 17 (6) (2011), pp. 1753 - 1762
Band structure properties of novel BxGa1−xP alloys for silicon integration
, , , , , , , and
J. Appl. Phys. 110 (6) (2011), 063101
Laser operation of Ga(NAsP) lattice-matched to (001) silicon substrate
S. Liebich, M. Zimprich, A. Beyer, C. Lange, D. J. Franzbach, S. Chatterjee, N. Hossain, S. J. Sweeney, K. Volz, B. Kunert, and W. Stolz
Appl. Phys. Lett. 99 (7) (2011), 071109
Reduced threshold current dilute nitride Ga(NAsP)/GaP quantum well lasers grown by MOVPE
N. Hossain, S. J. Sweeney, S. Rogowsky, R. Ostendorf, J. Wagner, S. Liebich, M. Zimprich, K. Volz, B. Kunert, W. Stolz
Electronics Letters 47 (16) (2011), pp. 931 - 933
Atomic scale annealing effects on InxGa1-xNyAs1-y studied by TEM three-beam imaging
K. Müller, M. Schowalter, A. Rosenauer, D. Hu, D. M. Schaadt, M. Hetterich, P. Gilet, O. Rubel, R. Fritz and K. Volz
Phys. Rev. B 84 (4) (2011), 045316
GaP-nucleation on exact Si (001) substrates for III/V device integration
K. Volz, A. Beyer, W. Witte, J. Ohlmann, I. Németh, B. Kunert, W. Stolz
Journal of Crystal Growth 315 (1) (2011), pp. 37 - 47
Correlation between hetero-interface properties and photoluminescence efficiency of Ga(NAsP)/(BGa)P multi-quantum well structures on (001) Si substrate
B. Kunert, S. Liebich, A. Beyer, R. Fritz, S. Zinnkann, K. Volz, W. Stolz
Journal of Crystal Growth 315 (1) (2011), pp. 28 - 31
Indirect in situ characterization of Si (100) substrates at the initial stage of III-V heteroepitaxy
H. Döscher, O. Supplie, S. Brückner, T. Hannappel, A. Beyer, J. Ohlmann, K. Volz
Journal of Crystal Growth 315 (1) (2011), pp. 16 - 21
Hopping relaxation of photo-excited excitons in Ga(NAsP) bulk structure
K. Jandieri, C. Jurecka, J. Ohlmann, A. Beyer, B. Kunert, S. D. Baranovskii, K. Volz, W. Stolz, F. Gebhard
physica status solidi (c) 8 (1) (2011), p. 163 - 168
Influence of crystal polarity on crystal defects in GaP grown on exact Si (001)
A. Beyer, I. Németh, S. Liebich, J. Ohlmann, W. Stolz, and K. Volz
J. Appl. Phys. 109 (8) (2011), 083529
Vibrational mode and dielectric function spectra of BGaP probed by Raman scattering and spectroscopic ellipsometry
S. Rogowsky, M. Bäumler, M. Wolfer, L. Kirste, R. Ostendorf, J. Wagner, S. Liebich, W. Stolz, K. Volz, and B. Kunert
J. Appl. Phys. 109 (5) (2011), 053504
High modal gain in Ga(NAsP)/(BGa)((As)P) heterostructures grown lattice matched on (001) silicon
N. Koukourakis, D. A. Funke, N. C. Gerhardt, M. R. Hofmann, S. Liebich, C. Bückers, S. Zinnkann, M. Zimprich, A. Beyer, S. Chatterjee, S. W. Koch, B. Kunert, K. Volz and W. Stolz
Proc. SPIE 7939 (2011), 793927
Investigation of optical and concentration profile changes of InGaNAs/GaAs heterostructures induced by thermal annealing
R. Imlau, K. Müller, O. Rubel, R. Fritz, M. Schowalter, K. Volz and A. Rosenauer
Journal of Physics: Conf. Ser. 326 (1) (2011), 012038
Determination of Nitrogen Concentration in Dilute GaNAs by STEM HAADF Z-Contrast Imaging
T. Grieb, K. Müller, O. Rubel, R. Fritz, C. Gloistein, N. Neugebohrn, M. Schowalter, K. Volz and A. Rosenauer
Journal of Physics: Conf. Ser. 326 (1) (2011), 012033
TEM 3-beam study of annealing effects in InGaNAs using ab-initio structure factors for strain-relaxed supercells
K. Müller, M. Schowalter, O. Rubel, D. Z. Hu, D. M. Schaadt, M. Hetterich, P. Gilet, R. Fritz, K. Volz and A. Rosenauer
Journal of Physics: Conf. Ser. 326 (1) (2011), 012026
Strain, composition and disorder in ADF imaging of semiconductors
V. Grillo, K. Mueller, K. Volz, F. Glas, T. Grieb and A. Rosenauer
Journal of Physics: Conf. Ser. 326 (1) (2011), 0120062006 - 2010
2010
Peculiarities of the photoluminescence of metastable Ga(N,As,P)/GaP quantum well structures
C. Karcher, K. Jandieri, B. Kunert, R. Fritz, M. Zimprich, K. Volz, W. Stolz, F. Gebhard, S. D. Baranovskii, and W. Heimbrodt
Phys. Rev. B 82 (24) (2010), 245309
Characterization of solar cells by photocurrent spectroscopy and current-voltage characteristics with high spatial resolution
M. Schwalm, C. Lange, W. W. Rühle, W. Stolz, K. Volz, and S. Chatterjee
Optics Express 18 (6) (2010), pp. 6277 - 6287
Highly polarized self-assembled chains of single layer InP/(In,Ga)P quantum dots
A. Ugur, F. Hatami, A. N. Vamivakas, L. Lombez, M. Atatüre, K. Volz, and W. T. Masselink
Appl. Phys. Lett. 97 (25) (2010), 253113
In situ antiphase domain quantification applied on heteroepitaxial GaP growth on Si (100)
H. Döscher, B. Kunert, A. Beyer, O. Supplie, K. Volz, W. Stolz, and T. Hannappel
J. Vac. Sci. Technol. B 28 (4) (2010), C5H1 - C5H6
Influence of spatial pump distribution on the performance of high power vertical-external-cavity surface-emitting lasers
A. Chernikov, J. Hermann, M. Scheller, M. Koch, B. Kunert, W. Stolz, S. Chatterjee, S. W. Koch, T. L. Wang, Y. Kaneda, J. M. Yarborough, J. Hader, and J. V. Moloney
Appl. Phys. Lett. 97 (19) (2010), 191110
Predictive Microscopic Modeling of VECSELs
J. Hader, G. Hardesty, T.-L. Wang, M. J. Yarborough, Y. Kaneda, J. V. Moloney, B. Kunert, W. Stolz, S. W. Koch
IEEE Journal of Quantum Electronics 46 (5) (2010), pp. 810 - 817
High-Power Optically Pumped Semiconductor Laser at 1040 nm
T.-L. Wang, Y. Kaneda, J. M. Yarborough, J. Hader, J. V. Moloney, A. Chernikov, S. Chatterjee, S. W. Koch, B. Kunert, W. Stolz
IEEE Photonics Technology Letters 22 (9) (2010), pp. 661 - 663
Comparison of ultrafast carrier thermalization in GaxIn1-xAs and Ge quantum wells
C. Lange, N. S. Köster, S. Chatterjee, H. Sigg, D. Chrastina, G. Isella, H. von Känel, B. Kunert, and W. Stolz
Phys. Rev. B 81 (4) (2010), 045320
MOVPE Growth of III-V Solar Cells on Silicon in 300 mm Closed Coupled Showerhead Reactor
T. Roesener, H. Döscher, A. Beyer, S. Brückner, V. Klinger, A. Wekkeli, P. Kleinschmidt, C. Jurecka, J. Ohlmann, K. Volz, W. Stolz, T. Hannappel, A. W. Bett, F. Dimroth
Proc. 25th European Conf. "Photovoltaic Solar Energy", Valencia (2010), pp. 964 - 968
Investigation of carrier dynamics in Zn1-xMgxO by time-resolved photoluminescence
A. Chernikov, S. Horst, M. Koch, K. Volz, S. Chatterjee, S. W. Koch, T. A. Wassner, B. Laumer and M. Eickhoff
Journal of Luminescence 130 (11) (2010), pp. 2256 - 2259
Effect of bonding and static atomic displacements on composition quantification in InxGa1-xNyAs1-y
K. Müller, M. Schowalter, A. Rosenauer, O. Rubel, K. Volz
Phys. Rev. B 81 (2010), 075315
Novel Ga(NAsP)-Based Heterostructures for the Integration of Optoelectronic Functionalities on (001) Si-Substrate
B. Kunert, K. Volz and W. Stolz
ECS Transactions 28 (5) (2010), pp. 219 - 226
2009
Optical properties of Ga(NAsP) lattice matched to Si
C. Karcher, H. Grüning, M. Güngerich, P. J. Klar, B. Kunert, K. Volz, W. Stolz, W. Heimbrodt
physica status solidi (c) 6 (12) (2009), pp. 2638 - 2643
Gain characteristics and lasing of GA(NAsP) multi-quantum well structures
C. Lange, S. Chatterjee, B. Kunert, K. Volz, W. Stolz, W. W. Rühle, N. C. Gerhardt, M. R. Hofmann
physica status solidi (c) 6 (2) (2009), pp. 576 - 578
Performance changes of a vertical-external-cavity surface-emitting laser by an intra-cavity anti-reflex-coating
S. Horst, S. Chatterjee, W. W. Rühle, W. Diehl, W. Stolz, E. Kühn, A. Thränhardt, S. W. Koch, P. Brick
physica status solidi (c) 6 (2) (2009), pp. 572 - 575
Ga(AsSb)/GaAs/(AlGa)As heterostructures: additional hole-confinement due to quantum islands
S. Horst, S. Chatterjee, K. Hantke, P. J. Klar, I. Németh, W. Stolz, K. Volz, C. Bückers, A. Thränhardt, S. W. Koch, W. Rühle, S. R. Johnson, J.-B. Wang, Y.-H. Zhang
physica status solidi (c) 6 (2) (2009), pp. 411 - 414
Continuous-wave single-frequency 295 nm laser source by a frequency-quadrupled optically pumped semiconductor laser
Y. Kaneda, M. Fallahi, J. Hader, J. V. Moloney, S. W. Koch, B. Kunert, and W. Stolz
Optics Letters 34 (22) (2009), pp. 3511 - 3513
Fluctuations of the peak current of tunnel diodes in multi-junction solar cells
K. Jandieri, S. D. Baranovskii, W. Stolz, F. Gebhard, W. Guter, M. Hermle and A. W. Bett
J. Phys. D: Appl. Phys. 42 (15) (2009), 155101
MOVPE growth of dilute nitride III/V semiconductors using all liquid metalorganic precursors
K. Volz, J. Koch, F. Höhnsdorf, B. Kunert, W. Stolz
Journal of Crystal Growth 311 (8) (2009), pp. 2418 - 2426
Band anti-crossing and carrier recombination in dilute nitride phosphide based lasers and light emitting diodes
J. Chamings, S. Ahmed, A. R. Adams, S. J. Sweeney, V. A. Odnoblyudov, C. W. Tu, B. Kunert, W. Stolz
physica status solidi (b) 246 (3) (2009), pp. 527 - 531
2008
Analytical theory for favorable defects in tunnel diodes
K. Jandieri, S. D. Baranovskii, W. Stolz, and F. Gebhard
J. Appl. Phys. 104 (11) (2008), 114511
Resonant electron tunneling through defects in GaAs tunnel diodes
K. Jandieri, S. D. Baranovskii, O. Rubel, W. Stolz, F. Gebhard, W. Guter, M. Hermle, and A. W. Bett
J. Appl. Phys. 104 (9) (2008), 094506
5-W Yellow Laser by Intracavity Frequency Doubling of High-Power Vertical-External-Cavity Surface-Emitting Laser
M. Fallahi, L. Fan, Y. Kaneda, C. Hessenius, J. Hader, H. Li, J. V. Moloney, B. Kunert, W. Stolz, S. W. Koch, J. Murray, R. Bedford
IEEE Photonics Technology Letters 20 (20) (2008), pp. 1700 - 1702
Local structure of Mn in hydrogenated Ga1-xMnxAs
C. Bihler, G. Ciatto, H. Huebl, G. Martinez-Criado, P. J. Klar, K. Volz, W. Stolz, W. Schoch, W. Limmer, F. Filippone, A. Amore Bonapasta, and M. S. Brandt
Phys. Rev. B 78 (23) (2008), 235208
In situ verification of single-domain III-V on Si (100) growth via metal-organic vapor phase epitaxy
H. Döscher, T. Hannappel, B. Kunert, A. Beyer, K. Volz, and W. Stolz
Appl. Phys. Lett. 93 (17) (2008), 172110
Si (001) surface preparation for the antiphase domain free heteroepitaxial growth of GaP on Si substrate
B. Kunert, I. Németh, S. Reinhard, K. Volz, and W. Stolz
Thin Solid Films 517 (1) (2008), pp. 140 - 143
Influence of GaInP ordering on the electronic quality of concentrator solar cells
I. Garcia, I. Rey-Stolle, C. Algora, W. Stolz and K. Volz
Journal of Crystal Growth 310 (23) (2008), pp. 5209 - 5213
Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers
J. Chamings, A. R. Adams, S. J. Sweeney, B. Kunert, K. Volz, and W. Stolz
Appl. Phys. Lett. 93 (10) (2008), 101108
Modeling the compositional dependence of electron diffraction in dilute GaAs- and GaP-based compound semiconductors
O. Rubel, I. Németh, W. Stolz, and K. Volz
Phys. Rev. B 78 (7) (2008), 075207
Direct structural evidence of the change in N-III bonding in (GaIn)(NAs) before and after thermal annealing
K. Volz, T. Torunski, O. Rubel, and W. Stolz
J. Appl. Phys. 104 (5) (2008), 053504
Monolithic integration of Ga(NAsP)/(BGa)P multi-quantum well structures on (001) silicon substrate by MOVPE
B. Kunert, S. Zinnkann, K. Volz, and W. Stolz
Journal of Crystal Growth 310 (23) (2008), pp. 4776 - 4779
Ways to quantitatively detect antiphase disorder in GaP films grown on Si (001) by transmission electron microscopy
I. Németh, B. Kunert, W. Stolz, K. Volz
Journal of Crystal Growth 310 (23) (2008), pp. 4763 - 4767
Doping, Electrical Properties and Solar Cell Application of GaInNAs
K. Volz, W. Stolz, J. Teubert, P. J. Klar, W. Heimbrodt, F. Dimroth, C. Baur, und A. W. Bett
in "Dilute III-V Nitride Semiconductors and Material Systems: Physics and Technolgy", Ed. A. Erol
Springer Series in Materials Science 105 (2008), pp. 369 - 404
Properties and Laser Applications of the GaP-based (GaNAsP)-Material System for Integration to Si Substrates
B. Kunert, K. Volz, und W. Stolz
in "Dilute III-V Nitride Semiconductors and Material Systems: Physics and Technology", Ed. A. Erol
Springer Series in Materials Science 105 (2008), pp. 317 - 341
Optimization of annealing conditions of (GaIn)(NAs) for solar cell applications
K. Volz, D. Lackner, I. Németh, B. Kunert, W. Stolz, C. Baur, F. Dimroth, A. W. Bett
Journal of Crystal Growth 310 (7 - 9) (2008), pp. 2222 - 2228
Heteroepitaxy of GaP on Si: Correlation of morphology, anti-phase-domain structure and MOVPE growth conditions
I. Németh, B. Kunert, W. Stolz, K. Volz
Journal of Crystal Growth 310 (7 - 9) (2008), pp. 1595 - 1601
Resonant tunneling as a dominant transport mechanism in n-GaAs/p-GaAs tunnel diodes
K. Jandieri, S. D. Baranovskii, O. Rubel, W. Stolz, F. Gebhard, W. Guter, M. Hermle, and A. W. Bett
Appl. Phys. Lett. 92 (24) (2008), 243504
Hole confinement in quantum islands in Ga(AsSb)/GaAs/(AlGa)As heterostructures
S. Horst, S. Chatterjee, K. Hantke, P. J. Klar, I. Németh, W. Stolz, K. Volz, C. Bückers, A. Thränhardt, S. W. Koch, W. Rühle, S. R. Johnson, J.-B. Wang, Y.-H. Zhang
Appl. Phys. Lett. 92 (16) (2008), 161101
A GaAs metalorganic vapor phase epitaxy growth process to reduce Ge outdiffusion from the Ge substrate
B. Galiana, I. Rey-Stolle, C. Algora, K. Volz, and W. Stolz
Appl. Phys. Lett. 92 (15) (2008), 152102
Influence of chirp on the femtosecond excitation of a semiconductor microcavity laser
E. Kühn, A. Thränhardt, S. W. Koch, W. Stolz, S. Chatterjee, C. Lange, W. W. Rühle, W. Wohlleben, and M. Motzkus
Appl. Phys. Lett 92 (1) (2008), 011107
Annealing experiments of the GaP based dilute nitride Ga(NAsP)
B. Kunert, D. Trusheim, V. Voßebürger, K. Volz, W. Stolz
physica status solidi (a) 205 (1) (2008), pp. 114 - 119
Photoluminescence under magnetic field and hydrostatic pressure for probing the electronic properties of GaAsN
A. Polimeni, G. Pettinari, R. Trotta, F. Masia, M. Felici, M. Capizzi, A. Lindsay, E. P. O'Reilly, T. Niebling, W. Stolz, P. J. Klar, F. Martelli, S. Rubini
physica status solidi (a) 205 (1) (2008), pp. 107 - 113
Optical bistability and spatial resonator solitons based on exciton-polariton nonlinearity
Y. Larionova, W. Stolz, and C. O. Weiss
Optics Letters 33 (4) (2008), pp. 321 - 323
Zero-phonon lines of nitrogen-cluster states in GaNxAs1-x:H identified by time-resolved photoluminiscence
K. Hantke, S. Horst, S. Chatterjee, P. J. Klar, K. Volz, W. Stolz, W. W. Rühle, F. Masia, G. Pettinari, A. Polimeni and M. Capizzi
Journal of Materials Science 43 (12) (2008), pp. 4344 - 4347
Exact Solution for Hopping Dissociation of Germinate Electron-Hole Pairs in a Disordered Chain
O. Rubel, S. D. Baranovskii, W. Stolz, and F. Gebhard
Phys. Rev. Lett. 100 (19) (2008), 196602
Spectral and time dependences of the energy transfer of bound optical excitations in GaP(N)
T. Niebling, O. Rubel, W. Heimbrodt, W. Stolz, S. D. Baranovskii, P. J. Klar and J. F. Geisz
Journal of Physics: Condensed Matter 20 (1) (2008), 015217
Role of strain and properties of N clusters at the onset of the alloy limit in GaAs1−xNx
A. Polimeni, F. Masia, G. Pettinari, R. Trotta, M. Felici, M. Capizzi, A. Lindsay, E. P. O’Reilly, T. Niebling, W. Stolz and P. J. Klar
Phys. Rev. B 77 (15) (2008), 155213
Antiphase Boundries in GaAs/Ge and GaP/Si
I. Németh, B. Kunert, W. Stolz und K. Volz
in "Microscopy of Semiconducting Materials 2007" Eds. P. A. Midgley, A. G. Cullis, Springer
Springer Proceedings in Physics 120 (2) (2008), pp. 107 - 110
2007
Excitons bound to nitrogen pairs in GaAs as seen by photoluminescence of high spectral and spatial resolution
D. Karaiskaj, A. Mascarenhas, J. F. Klem, K. Volz, W. Stolz, M. Adamcyk, T. Tiedje
Phys. Rev. B 76 (12) (2007), 125209
Highly strained InGAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm
L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. W. Koch, J. T. Murray, and R. Bedford
Appl. Phys. Lett. 91 (13) (2007), 131114
Kinetic effects in recombination of optical excitations in disordered quantum heterostructures: Theory and experiment
O. Rubel, S. D. Baranovskii, K. Hantke, B. Kunert, W. W. Rühle, P. Thomas, K. Volz, W. Stolz
Journal of Luminescence 127 (2) (2007), pp. 285 - 290
Volatile Imido-Hydrazido Compounds of the Refractory Metals Niobium, Tantalum, Molybdenum, and Tungsten
D. Gaess, K. Harms, M. Pokoj, W. Stolz, and J. Sundermeyer
Inorg. Chem. 46 (16) (2007), pp. 6688 - 6701
Low threshold 1260 nm (GaIn)(NAs) semiconductor disk laser
W. Diehl, P. Brick, B. Kunert, S. Reinhard, K. Volz, and W. Stolz
Appl. Phys. Lett. 91 (7) (2007), 071103
Spectral dependence of the photoluminescence decay in disordered semiconductors
O. Rubel, W. Stolz, and S. D. Baranovskii
Appl. Phys. Lett. 91 (2) (2007), 021903
Annealing effects on the nanoscale indium and nitrogen distribution in Ga(NAs) and (GaIn)(NAs) quantum wells
K. Volz, T. Torunski, O. Rubel, W. Stolz, P. Kruse, D. Gerthsen, M. Schowalter, and A. Rosenauer
J. Appl. Phys. 102 (8) (2007), 083504
Microstructural analysis of Ga(NAs)/GaP heterostructures
I. Németh, T. Torunski, B. Kunert, W. Stolz, and K. Volz
J. Appl. Phys. 101 (12) (2007), 123524
Dynamic behavior of 1040 nm semiconductor disk lasers on a nanosecond time scale
W. Diehl, P. Brick, S. Chatterjee, S. Horst, K. Hantke, W. W. Rühle, W. Stolz, A. Thränhardt, and S. W. Koch
Appl. Phys. Lett. 90 (24) (2007), 241102
Linearly polarized dual-wavelength vertical-external-cavity surface-emitting laser
Appl. Phys. Lett. 90 (18) (2007), 181124
Material Development for Improved 1 eV (GaIn)(NAs) Solar Cell Structures
K. Volz, T. Torunski, D. Lackner, O. Rubel, W. Stolz, C. Baur, S. Müller, F. Dimroth, and A. W. Bett
Journal of Solar Energy Engineering - Transactions of the ASME 129 (3) (2007), pp. 266 - 271
Extended Tunability in a Two-Chip VECSEL
L. Fan, M. Fallahi, A. R. Zakharian, J. Hader, J. V. Moloney, R. Bedford, J. T. Murray, W. Stolz, S. W. Koch
IEEE Photonics Technology Letters 19 (8) (2007), pp. 544 - 546
Dilute nitride Ga(NAsP)/GaP-heterostructures: toward a material development for novel optoelectronic functionality on Si-substrate
B. Kunert, K. Volz, W. Stolz
physica status solidi (b) 244 (8) (2007), pp. 2730 - 2739
Silicon carbide and boron carbide thin films formed by plasma immersion ion implantation of hydrocarbon gases
W. Ensinger, G. Kraft, F. Sittner, K. Volz, K. Baba and R. Hatada
Surface and Coatings Technology 201 (19 - 20) (2007), pp. 8366 - 8369
Diamond-like carbon films formed by hydrocarbon plasma immersion ion implantation with methane/toluene mixtures
W. Ensinger, K. Volz, K. Baba, R. Hatada
Nucl. Instr. Meth. Phys. Res. B 257 (2007), pp. 692 - 695
Influence of annealing on the optical and structural properties of dilute N-containing III/V semiconductor heterostructures
K. Volz, J. Koch, B. Kunert, I. Németh, W. Stolz
Journal of Crystal Growth 298 (2007), pp. 126 - 130
MOVPE growth conditions of the novel direct band gap, diluted nitride Ga(NasP) material system pseudomorphically strained on GaP-substrate
B. Kunert, K. Volz, J. Koch, W. Stolz
Journal of Crystal Growth 298 (2007), pp. 121 - 125
Morphology of interior interfaces in the novel dilute nitride Ga(NAsP)/GaP material system
S. Oberhoff, B. Kunert, T. Torunski, K. Volz, W. Stolz
Journal of Crystal Growth 298 (2007), pp. 98 - 102
Hydrostatic pressure experiments on dilute nitride alloys
P. J. Klar, J. Teubert, M. Güngerich, T. Niebling, H. Grüning, W. Heimbrodt, K. Volz, W. Stolz, A. Polimeni, M. Capizzi, E. P. O'Reilly, A. Lindsay, M. Galluppi, L. Geelhaar, H. Riechert, S. Tomić
physica status solidi (b) 244 (1) (2007), pp. 24 - 31
Electron Mass in Dilute Nitrides and its Anomalous Dependence on Hydrostatic Pressure
G. Pettinari, A. Polimeni, F. Masia, R. Trotta, M. Felici, M. Capizzi, T. Niebling, W. Stolz, and P. J. Klar
Phys. Rev. Lett. 98 (2007), 146402
2006
Multichip vertical-external-cavity surface-emitting lasers: a coherent power scaling scheme
L. Fan, M. Fallahi, J. Hader, A. R. Zakharian, J. V. Moloney, J. T. Murray, R. Bedford, W. Stolz, and S. W. Koch
Optics Letters 31 (24) (2006), pp. 3612 - 3614
Influence of nitrogen-cluster states on the gyromagnetic factor of electrons in GaAs1-xNx
G. Pettinari, F. Masia, A. Polimeni, M. Felici, A. Frova, M. Capizzi, A. Lindsay, E. P. O'Reilly, P. J. Klar, W. Stolz, G. Bais, M. Piccin, S. Rubini, F. Martelli, and A. Franciosi
Phys. Rev. B 74 (24) (2006), 245202
Model of annealing-induced short-range order effects in (GaIn)(NP) alloys
O. Rubel, B. Kunert, S. D. Baranovskii, F. Grosse, K. Volz, and W. Stolz
Phys. Rev. B 74 (19) (2006), 195206
Compositional disorder in GaAs1-xNx:H investigated by photoluminescence
M. Felici, R. Trotta, F. Masia, A. Polimeni, A. Miriametro, M. Capizzi, P. J. Klar, and W. Stolz
Phys. Rev. B 74 (8) (2006), 085203
Optimizing the performance of a vertical-cavity surface-emitting laser
S. Chatterjee, W. Wohlleben, C. Lange, W. Stolz, M. Motzkus, and W. W. Rühle
Appl. Phys. Lett. 89 (15) (2006), 151122
High brightness spectral beam combination of high-power vertical-external-cavity surface-emitting lasers
Y. Kaneda, L. Fan, T.-C. Hsu, N. Peyghambarian, M. Fallahi, A. R. Zakharian, J. Hader, J. V. Moloney, W. Stolz, S. Koch, R. Bedford, A. Sevian, L. Glebov
IEEE Photonics Technology Letters 18 (17) (2006), pp. 1795 -1797
Tuning the magnetic properties of GaAs:Mn/MnAs hybrids via the MnAs cluster shape
H.-A. Krug von Nidda, T. Kurz, A. Loidl, Th. Hartmann, P. J. Klar, W. Heimbrodt, M. Lampalzer, K. Volz and W. Stolz
Journal of Physics: Condensed Matter 18 (26) (2006), pp. 6071 - 6083
Excitation transfer between extended band states and N-related localized states in GaP1-xNx with x up to 1%
T. Niebling, T. Lapp, J. Kampmann, P. J. Klar, W. Heimbrodt, B. Kunert, K. Volz, W. Stolz
Physica E 32 (1 - 2) (2006), pp. 222 - 225
Competition of N-passivation and Te-passivation in hydrogenation of Te-doped (Ga,In)(N,As)
J. Teubert, P. J. Klar, W. Heimbrodt, K. Volz, W. Stolz, A. Polimeni, M. Capizzi
Physica E 32 (1 - 2) (2006), pp. 218 - 221
Lasing in optically pumped Ga(NAsP)/GaP heterostructures
S. Borck, S. Chatterjee, B. Kunert, K. Volz, W. Stolz, J. Heber, W. W. Rühle, N. C. Gerhardt, and M. R. Hofmann
Appl. Phys. Lett. 89 (3) (2006), 031102
Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by intracavity frequency doubling
L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz
Appl. Phys. Lett. 88 (25) (2006), 251117
Luminescence investigations of the GaP-based dilute nitride Ga(NAsP) material system
B. Kunert, K. Volz, I. Németh, W. Stolz
Journal of Luminescence 121 (2) (2006), pp. 361 - 364
Model of temperature quenching of photoluminescence in disordered semiconductors and comparison to experiment
O. Rubel, S. D. Baranovskii, K. Hantke, B. Kunert, W. W. Rühle, P. Thomas, K. Volz, and W. Stolz
Phys. Rev. B 73 (23) (2006), 233201
Non-radiative recombination of optical excitations in (GaIn)(NAs) quantum wells
O. Rubel, S. D. Baranovskii, K. Hantke, W. W. Rühle, P. Thomas, K. Volz, W. Stolz
physica status solidi (c) 3 (7) (2006), pp. 2481 - 2484
Near room temperature electrical injection lasing for dilute nitride Ga(NAsP)/GaP quantum-well structures grown by metal organic vapour phase epitaxy
B. Kunert, A. Klehr, S. Reinhard, K. Volz, W. Stolz
Electronics Letters 42 (10) (2006), pp. 601 - 603
Direct-band-gap Ga(NAsP)-material system pseudomorphically grown on GaP substrate
B. Kunert, K. Volz, J. Koch, and W. Stolz
Appl. Phys. Lett. 88 (18) (2006), 182108
Nanoanalytical quantification of the nitrogen content in Ga(NAs)/GaAs by using transmission electron microscopy in combination with refined structure factor calculation
K. Volz, O. Rubel, T. Torunski, S. D. Baranovskii, and W. Stolz
Appl. Phys. Lett. 88 (8) (2006), 081910
Tunable high-power high-brightness linearly polarized vertical-external-cavity surface-emitting lasers
L. Fan, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, A. R. Zakharian, J. Hader, J. V. Moloney, W. Stolz, and S. W. Koch
Appl. Phys. Lett. 88 (2) (2006), 021105
Interaction between conduction band edge and nitrogen states probed by carrier effective-mass measurements in GaAs1-xNx
F. Masia, G. Pettinari, A. Polimeni, M. Felici, A. Miriametro, M. Capizzi, A. Lindsay, S. B. Healy, E. P. O'Reilly, A. Cristofoli, G. Bais, M. Piccin, S. Rubini, F. Martelli, A. Franciosi, P. J. Klar, K. Volz, and W. Stolz
Phys. Rev. B 73 (7) (2006), 073201
Optical activity of a single MnAs Cluster: Birefringence or Kerr effect
M. Leuschner, P. J. Klar, W. Heimbrodt, W. W. Rühle, S. Hara, W. Stolz, K. Volz, T. Kurz, A. Loidl, H.-A. Krug von Nidda
Journal of Magnetism and Magnetic Materials 301 (2) (2006), pp. 478 - 488
Correlation of band formation and local vibrational mode structure of Ga0.95Al0.05As1-xNx with 0 ≤ x ≤ 0.03
M. Güngerich, P. J. Klar, W. Heimbrodt, K. Volz, K. Köhler, J. Wagner, A. Polimeni, M. Capizzi, H. Ch. Alt, and Y. V. Gomeniuk
physica status solidi (c) 3 (3) (2006), pp. 619 - 622
First demonstration of electrical injection lasing in the novel dilute nitride Ga(NAsP)/GaP-material system
B. Kunert, S. Reinhard, J. Koch, M. Lampalzer, K. Volz, W. Stolz
physica status solidi (c) 3 (3) (2006), pp. 614 - 6182001 - 2005
2005
Carrier relaxation dynamics in annealed and hydrogenated (GaIn)(NAs)/GaAs quantum wells
K. Hantke, J. D. Heber, S. Chatterjee, P. J. Klar, K. Volz, W. Stolz, W. W. Rühle, A. Polimeni, and M. Capizzi
Appl. Phys. Lett. 87 (25) (2005), 252111
Room-temperature threshold reduction in vertical-cavity surface-emitting lasers by injection of spin-polarized electrons
J. Rudolph, S. Döhrmann, D. Hägele, M. Oestreich, and W. Stolz
Appl. Phys. Lett. 87 (24) (2005), 241117
Bound-to-bound and bound-to-free transitions in surface photovoltage spectra: determination of the band offsets for InxGa1-xAs and InxGa1-xAs1-yNy quantum wells
M. Galluppi, L. Geelhaar, H. Riechert, M. Hetterich, A. Grau, S. Birner, and W. Stolz
Phys. Rev. B 72 (15) (2005), 155324
Quantitative description of disorder parameters in (GaIn)(NAs) quantum wells from the temperature-dependent photoluminescence spectroscopy
O. Rubel, M. Galluppi, S. D. Baranovskii, K. Volz, L. Geelhaar, H. Riechert, P. Thomas, and W. Stolz
J. Appl. Phys. 98 (6) (2005), 063518
Spin-dependent localization effects in GaAs:Mn/MnAs granular paramagnetic-ferromagnetic hybrids at low temperatures
C. Michel, C. H. Thien, S. Ye, P. J. Klar, W. Heimbrodt, S. D. Baranovskii, P. Thomas, M. Lampalzer, K. Volz, W. Stolz, B. Goldlücke
Superlattices and Microstructures 37 (5) (2005), pp. 321 - 326
Over 3 W high-efficiency vertical-external-cavity surface-emitting lasers and application as efficient fiber laser pump sources
L. Fan, M. Fallahi, J. Hader, A. R. Zakharian, M. Kolesik, J. V. Moloney, T. Qiu, A. Schülzgen, N. Peyghambarian, W. Stolz, S. W. Koch, and J. T. Murray
Appl. Phys. Lett. 86 (21) (2005), 211116
FULLSPECTRUM: a new PV wave making more efficient use of the solar spectrum
A. Luque, A. Martí, A. Bett, V. M. Andreev, C. Jaussaud, J. A. M. van Roosmalen, J. Alonso, A. Räuber, G. Strobl, W. Stolz, C. Algora, B. Bitnar, A. Gombert, C. Stanley, P. Wahnon, J. C. Conesa, W. G. J. H. M. van Sark, A. Meijerink, G. P. M. van Klink, K. Barnham, R. Danz, T. Meyer, I. Luque-Heredia, R. Kenny, C. Christofides, G. Sala, P. Benítez
Solar Energy Materials and Solar Cells 87 (1 - 4) (2005), pp. 467 - 479
Time-resolved photoluminescence of type-I and type-II (GaIn)As/Ga(NAs) heterostructures
K. Hantke, J. D. Heber, C. Schlichenmaier, A. Thränhardt, T. Meier, B. Kunert, K. Volz, W. Stolz, S. W. Koch, and W. W. Rühle
Phys. Rev. B 71 (16) (2005), 165320
Vibrational properties of GaAs0.915N0.085 under hydrostatic pressures up to 20 GPa
M. Güngerich, P. J. Klar, W. Heimbrodt, J. Koch, W. Stolz, M. P. Halsall, and P. Harmer
Phys. Rev. B 71 (7) (2005), 075201
High-power optically pumped VECSEL using a double-well resonant periodic gain structure
L. Fan, J. Hader, M. Schillgalies, M. Fallahi, A. R. Zakharian, J. V. Moloney, R. Bedford, J. T. Murray, S. W. Koch, W. Stolz
IEEE Photonics Technology Letters 17 (9) (2005), pp. 1764 - 1766
Type I-type II transition in InGaAs-GaNAs heterostructures
C. Schlichenmaier, H. Grüning, A. Thränhardt, P. J. Klar, B. Kunert, K. Volz, W. Stolz, W. Heimbrodt, T. Meier, S. W. Koch, J. Hader, and J. V. Moloney
Appl. Phys. Lett. 86 (8) (2005), 081903
On the theoretical description of photoluminescence in disordered quantum structures
O. Rubel, S. D. Baranovskii, K. Hantke, J. D. Heber, J. Koch, P. Thomas, J. M. Marshall, W. Stolz, W. W. Rühle
Journal of Optoelectronics and Advanced Materials 7 (1) (2005), pp. 115 - 120
Detection of nanometer-sized strain fields in (GaIn)(NAs) alloys by specific dark field transmission electron microscopic imaging
K. Volz, T. Torunski, and W. Stolz
J. Appl. Phys. 97 (1) (2005), 014306
Magnetic Interactions in Granular Paramagnetic–Ferromagnetic GaAs: Mn/MnAs Hybrids
W. Heimbrodt, P. J. Klar, S. Ye, M. Lampalzer, C. Michel, S. D. Baranovskii, P. Thomas und W. Stolz
Journal of Superconductivity 18 (3) (2005), pp. 315 - 320
2004
Tuning of the average p-d exchange in (Ga,Mn)As by modification of the Mn electronic structure
Th. Hartmann, S. Ye, P. J. Klar, W. Heimbrodt, M. Lampalzer, W. Stolz, T. Kurz, A. Loidl, H.-A. Krug von Nidda, D. Wolverson, J. J. Davies, H. Overhof
Phys. Rev. B 70 (23) (2004), 233201
Influence of N on the electron transport in (Ga,In)(N,As) probed by magnetotransport under hydrostatic pressure
J. Teubert, P. J. Klar, W. Heimbrodt, K. Volz, W. Stolz
IEE Proceedings - Optoelectronics 151 (5) (2004), pp. 357 - 360
Te-co-doping experiments in ferromagnetic Mn(Ga)As/GaAs-cluster hybrid layers by MOVPE
M. Lampalzer, S. Nau, C. Pietzonka, W. Treutmann, K. Volz, W. Stolz
Journal of Crystal Growth 272 (1 - 4) (2004), pp. 772 - 777
MOVPE growth experiments of the novel (GaIn)(NP)/GaP material system
B. Kunert, J. Koch, T. Torunski, K. Volz, W. Stolz
Journal of Crystal Growth 272 (1 - 4) (2004), pp. 753 - 759
Specific structural and compositional properties of (GaIn)(NAs) and their influence of optoelectronic device performance
K. Volz, T. Torunski, B. Kunert, O. Rubel, S. Nau, S. Reinhard, W. Stolz
Journal of Crystal Growth 272 (1 - 4) (2004), pp. 739 - 747
Comparison of dilute nitride growth on a single- and 8x4-inch multiwafer MOVPE system for solar cell applications
F. Dimroth, C. Baur, A. W. Bett, K. Volz, W. Stolz
Journal of Crystal Growth 272 (1 - 4) (2004), pp. 726 - 731
MOVPE growth of (AlGaIn)P/(GaIn)P heterostructures using TBP
N. El-Zein, A. Greiling, J. Koch, W. Stolz, S. Reinhard, B. T. McDermott
Journal of Crystal Growth 272 (1 - 4) (2004), pp. 609 - 614
Columnar [001]-oriented nitrogen order in Ga(NAs) and (GaIn)(NAs) alloys
O. Rubel, K. Volz, T. Torunski, S. D. Baranovskii, F. Grosse, and W. Stolz
Appl. Phys. Lett. 85 (24) (2004), 5908 - 5910; erratum Appl. Phys. Lett. 87 (4) Errata (2005), 049903
Tunable variation of the electron effective mass and exciton radius in hydrogenated GaAs1-xNx
A. Polimeni, G. Baldassarri Höger von Högersthal, F. Masia, A. Frova, M. Capizzi, S. Sanna, V. Fiorentini, P. J. Klar, and W. Stolz
Phys. Rev. B 69 (4) (2004), 041201 (R)
Enhanced weak Anderson localization phenomena in the magnetoresistance of n-type (Ga,In)(N,As)
J. Teubert, P. J. Klar, W. Heimbrodt, K. Volz, W. Stolz, P. Thomas, G. Leibiger, and V. Gottschalch
Appl. Phys. Lett. 84 (5) (2004), pp. 747 - 749
Tuning of the electron effective mass and exciton wavefunction size in GaAs1-xNx
A. Polimeni, F. Masia, G. Baldassarri Höger von Högersthal, A. Frova, M. Capizzi, S. Sanna, V. Fiorentini, P. J. Klar, W. Stolz
Physica E 21 (2 - 4) (2004), pp. 747 - 751
Evidence for a type I to type II transition in (Ga,In)(N,As)/Ga(N,As) quantum well structures
H. Grüning, P. J. Klar, W. Heimbrodt, S. Nau, B. Kunert, K. Volz, W. Stolz, G. Weiser
Physica E 21 (2 - 4) (2004), pp. 666 - 670
Cluster formation and magnetic properties of Mn-incorporated (GaIn)As/InP layers grown by metal-organic vapor phase epitaxy
S. Hara, M. Lampalzer, T. Torunski, K. Volz, W. Treutmann and W. Stolz
Journal of Crystal Growth 261 (2 - 3) (2004), pp. 330 - 335
Hopping relaxation of excitons in GaInNAs/GaNAs quantum wells
H. Grüning, K. Kohary, S. D. Baranovskii, O. Rubel, P. J. Klar, A. Ramakrishnan, G. Ebbinghaus, P. Thomas, W. Heimbrodt, W. Stolz, W. W. Rühle
physica status solidi (c) 1 (1) (2004), pp. 109 - 112
Correlation of the structural and electronic properties of (Ga,In)(N,As) based heterostructures
P. J. Klar and K. Volz
Journal of Physics: Condensed Matter 16 (31) (2004), S 3053
2003
Anisotropy of the magnetotransport in (Ga,Mn)As/MnAs paramagnetic-ferromagnetic hybrid structures
S. Ye, P. J. Klar, Th. Hartmann, W. Heimbrodt, M. Lampalzer, S. Nau, T. Torunski, W. Stolz, T. Kurz, H.-A. Krug von Nidda, and A. Loidl
Appl. Phys. Lett. 83 (19) (2003), pp. 3927 - 3929
Monitoring the non-parabolicity of the conduction band in GaN0.018As0.982/GaAs quantum wells
P. J. Klar, H. Grüning, W. Heimbrodt, J. Koch, W. Stolz, S. Tomić, E. P. O'Reilly
Solid-State Electronics 47 (3) (2003), pp. 437 - 441
Hydrogen-related effects in dilute nitrides
A. Polimeni, F. Masia, M. Felici, G. Baldassarri Höger von Högersthal, M. Bissiri, A. Frova, M. Capizzi, P. J. Klar, W. Stolz, I. A. Buyanova, W. M. Chen, H. P. Xin, C. W. Tu
Physica B: Condensed Matter 340 - 342 (2003), pp. 371 - 376
Magneto-Optical Spectroscopy on (Ga,Mn)As-Based Layers - Correlation Between the p-d-Exchange Integral and Doping
T. Hartmann, S. Ye, T. Henning, P. J. Klar, M. Lampalzer, W. Stolz und W. Heimbrodt
Journal of Superconductivity 16 (2) (2003), pp. 423 - 426
Signatures of biexcitons and triexcitons in coherent non-degenerate semiconductor optics
T. Meier, C. Sieh, E. Finger, W. Stolz, W. W. Rühle, P. Thomas, S. W. Koch, A. D. Wieck
physica status solidi (b) 238 (3) (2003), pp. 537 - 540
Autocorrelation spectroscopy on single GaInAs/GaAs quantum wells
U. Neuberth, G. von Freymann, M. Wegener, S. Nau, W. Stolz
physica status solidi (b) 238 (3) (2003), pp. 498 - 501
Development of a 1.0 eV (GaIn)(NAs) solar cell
C. Baur, A. W. Bett, F. Dimroth, S. van Riesen, B. Kunert, M. Traversa, K. Volz, W. Stolz
Proc. of 3rd World Conf. "Photovoltaic Energy Conversion", Osaka, Japan 1 (2003), pp. 677 - 680
Correlation between lasing properties and band alignment of edge emitting lasers with (Ga,In)(N,As)/Ga(N,As) active regions
H. Grüning, P. J. Klar, W. Heimbrodt, G. Weiser, J. Koch, S. Nau, W. Stolz, R. Fehse, A. R. Adams, A. Ramakrishnan, G. Ebbinghaus
physica status solidi (b) 235 (2) (2003), pp. 417 - 422
Influence of Codoping on the Magnetoresistance of Paramagnetic (Ga,Mn)As
S. Ye, P. J. Klar, T. Henning, M. Lampalzer, W. Stolz, W. Heimbrodt
Journal of Superconductivity 16 (1) (2003), pp. 159 - 162
Early manifestation of localization effects in diluted Ga(AsN)
F. Masia, A. Polimeni, G. Baldassarri Höger von Högersthal, M. Bissiri, M. Capizzi, P. J. Klar, and W. Stolz
Appl. Phys. Lett. 82 (25) (2003), pp. 4474 - 4476
Correlation of the physical properties and the interface morphology of AlGaAs/GaAs heterostructures
L. Gottwaldt, K. Pierz, F. J. Ahlers, E. O. Göbel, S. Nau, T. Torunski, and W. Stolz
J. Appl. Phys. 94 (4) (2003), pp. 2464 - 2472
Unusual properties of metastable (Ga,In)(N,As) containing semiconductor structures
P. J. Klar, H. Grüning, L. Chen, T. Hartmann, D. Golde, M. Güngerich, W. Heimbrodt, J. Koch, K. Volz, B. Kunert, T. Torunski, W. Stolz, A. Polimeni, M. Capizzi, G. Dumitras, L. Geelhaar, H. Riechert
IEE Proceedings - Optoelectronics 150 (1) (2003), pp. 28 - 35
Global changes of the band structure and the crystal lattice of Ga(N,As) due to hydrogenation
P. J. Klar, H. Grüning, M. Güngerich, W. Heimbrodt, J. Koch, T. Torunski, W. Stolz, A. Polimeni, and M. Capizzi
Phys. Rev. B 67 (12) (2003), 121206 (R)
Mesoscopic island structure at GaAs/(AlGa)As interfaces grown by MBE
L. Gottwaldt, K. Pierz, F. J. Ahlers, E. O. Göbel, S. Nau, T. Torunski, W. Stolz
Journal of Crystal Growth 251 (1 - 4) (2003), pp. 85 - 89
The influence of the quantum lifetime on the width of the quantum Hall plateaus
L. Gottwaldt, K. Pierz, F. J. Ahlers, L. Schweitzer, E. O. Göbel, W. Stolz
Inst. Phys. Conf. Ser. 174 (2003), pp. 105 - 108
Overgrowth experiments of ferromagnetic (MnGa)As-cluster layers by MOVPE
M. Lampalzer, K. Volz, W. Treutmann, S. Nau, T. Torunski, K. Megges, J. Lorberth, W. Stolz
Journal of Crystal Growth 248 (2003), pp. 474 - 478
Nitrogen incorporation in (GaIn)(NAs) for 1.3 µm VCSEL grown with MOVPE
A. Ramakrishnan, G. Steinle, D. Supper, W. Stolz, G. Ebbinghaus
Journal of Crystal Growth 248 (2003), pp. 457 - 462
Doping behaviour of Si, Te, Zn and Mg in lattice-matched (GaIn)(NAs)/GaAs bulk films
K. Volz, J. Koch, B. Kunert and W. Stolz
Journal of Crystal Growth 248 (2003), pp. 451 - 456
Argon versus nitrogen ion beam assisted deposition of amorphous carbon and carbon-nitrogen films on aluminium for protection against aqueous corrosion
W. Ensinger, O. Lensch, F. Sittner, J. Knecht, K. Volz, T. Matsutani and M. Kiuchi
Nucl. Instr. Meth. Phys. Res. B 206 (2003), pp. 334 - 338
The role of Sb in the MBE growth of (GaIn)(NAsSb)
K. Volz, V. Gambin, W. Ha, M. A. Wistey, H. Yuen, S. Bank and J. S. Harris
Journal of Crystal Growth 251 (1 - 4) (2003), pp. 360 - 366
2002
Coulomb Correlations and Biexciton Signatures in Coherent Excitation Spectroscopy of Semiconductor Quantum Wells
E. Finger, S. Kraft, M. Hofmann, T. Meier, S. W. Koch, W. Stolz, W. W. Rühle, A. Wieck
physica status solidi (b) 234 (1) (2002), pp. 424 - 434
N-Composition and Pressure Dependence of the Inter Band Transitions of Ga(N,As)/GaAs Quantum Wells
H. Grüning, P. J. Klar, W. Heimbrodt, J. Koch, W. Stolz, A. Lindsay, S. Tomić, E. P. O'Reilly
High Pressure Research 22 (2) (2002), pp. 293 - 297
Ferromagnetic resonance studies of (Ga,Mn)As with MnAs clusters
Th. Hartmann, M. Lampalzer, P. J. Klar, W. Stolz, W. Heimbrodt, H.-A. Krug von Nidda, A. Loidl, L. Svistov
Physica E 13 (2 - 4) (2002), pp. 572 - 576
Interband transitions of quantum wells and device structures containing Ga(N,As) and (Ga,In)(N,As)
P. J. Klar, H. Grüning, W. Heimbrodt, G. Weiser, J. Koch, K. Volz, W. Stolz, S. W. Koch, S. Tomić, S. A. Choulis, T. J. C. Hosea, E. P. O'Reilly, M. Hofmann, J. Hader and J. V. Moloney
Semiconductor Science and Technology 17 (8) (2002), pp. 830 - 842
Spin injection, spin transport and spin coherence
M. Oestreich, M. Bender, J. Hübner, D. Hägele, W. W. Rühle, Th. Hartmann, P. J. Klar, W. Heimbrodt, M. Lampalzer, K. Volz and W. Stolz
Semiconductor Science and Technology 17 (4) (2002), 285 - 297
Emission dynamics and optical gain of 1.3-µm (GaIn)(NAs)/GaAs lasers
M. R. Hofmann, N. Gerhardt, A. M. Wagner, C. Ellmers, F. Höhnsdorf, J. Koch, W. Stolz, S. W. Koch, W. W. Rühle, J. Hader, J. V. Moloney, E. P. O'Reilly, B. Borchert, A. Y. Egorov, H. Riechert, H. C. Schneider, W. W. Chow
IEEE Journal of Quantum Electronics 38 (2) (2002), pp. 213 - 221
MOVPE-growth and characterization of metastable (GaIn)(NAs)/GaAs heterostructures for 1.3 µm lasers
A. Ramakrishnan, G. Ebbinghaus, W. Stolz
Inst. Phys. Conf. Ser. 170 (2002), pp. 825 - 830
MOVPE growth experiments and magnetic characterization of (GaMn)As layer structures
M. Lampalzer, K. Volz, W. Treutmann, S. Nau, T. Torunski, K. Megges, J. Lorberth and W. Stolz
Inst. Phys. Conf. Ser. 170 (2002), pp. 249 - 254
Surface-emitting second-harmonic generation in AlGaAs/GaAs waveguides
C. Degen, G. Jennemann, I. Fischer, W. Elsäßer, S. Leu, R. Rettig und W. Stolz
Optical and Quantum Electronics 34 (7) (2002), pp. 707 - 716
Semiconductor resonator solitons above bandgap
V. B. Taranenko, C. O. Weiss, and W. Stolz
J. Opt. Soc. Am. B 19 (4) (2002), pp. 684 - 688
Pitting corrosion of aluminium coated by ion beam assisted deposition of carbon with argon ions at different ion-to-atom arrival ratios
W. Ensinger, O. Lensch, J. Knecht, K. Volz, T. Matsutani and M. Kiuchi
Surface and Coatings Technology 158 - 159 (2002), pp. 594 - 598
Growth of the carbide, nitride and oxide of silicon by plasma immersion ion implantation
K. Volz and W. Ensinger
Surface and Coatings Technology 156 (1 - 3) (2002), p. 237 - 243
The multi-aperture hollow target: a method for determining ion incidence angles in plasma immersion ion implantation
W. Ensinger, K. Volz, M. Galonska, Ch. Gabor and H. Klein
Surface and Coatings Technology 156 (1 - 3) (2002), p. 92 - 96
2001
Influence of varying N-environments on the properties of (GaIn)(NAs) vertical-cavity surface-emitting lasers
S. A. Choulis, T. J. C. Hosea, P. J. Klar, M. Hofmann, and W. Stolz
Appl. Phys. Lett. 79 (26) (2001), pp. 4277 - 4279
Structure and composition of (GaMn)As formed by MOVPE
K. Volz, M. Lampalzer, A. Schaper, J. Zweck, W. Stolz
Inst. Phys. Conf. Ser. 169 (2001), pp. 211 - 214
Spintronics: Spin Electronics and Optoelectronics in Semiconductors
M. Oestreich, J. Hübner, D. Hägele, M. Bender, N. Gerhardt, M. Hofmann, W. W. Rühle, H. Kalt, Th. Hartmann, P. Klar, W. Heimbrodt, and W. Stolz
Adv. in Solid State Physics 41 (2001), pp. 173 - 186
Correlation of optical and transport properties of (AlGa)As/GaAs heterostructures
L. Gottwaldt, F. J. Ahlers, E. O. Göbel, G. Hein, S. Nau, K. Pierz, and W. Stolz
Proc. 25th Int. Conf. "Physics of Semiconductors", Springer Proc. in Physics 87 (2001), pp. 751 - 752
Novel investigation technique for interior III/V-semiconductor interfaces
S. Nau, G. Bernatz, and W. Stolz
Proc. 25th Int. Conf. "Physics of Semiconductors", Springer Proc. in Physics 87 (2001), pp. 435 - 436
Deviations from diffusive transport in 100 nm - 100 fs spatio-temporal pump-probe experiments on GaAs
J. Hetzler, A. Brunner, M. Wegener, S. Leu, S. Nau, and W. Stolz
Proc. 25th Int. Conf. "Physics of Semiconductors", Springer Proc. in Physics 87 (2001), pp. 190 - 191
(Ga,In)(N,As)-fine structure of the band gap due to nearest-neighbor configurations of the isovalent nitrogen
P. J. Klar, H. Grüning, J. Koch, S. Schäfer, K. Volz, W. Stolz, W. Heimbrodt, A. M. Kamal Saadi, A. Lindsay, and E. P. O'Reilly
Phys. Rev. B 64 (12) (2001), 121203 (R)
Pressure and Temperature Dependent Studies of GaNxAs1-x/GaAs Quantum Well Structures
P. J. Klar, H. Grüning, W. Heimbrodt, J. Koch, W. Stolz, P. M. A. Vicente, A. M. Kamal Saadi, A. Lindsay, E. P. O'Reilly
physica status solidi (b) 223 (1) (2001), pp. 163 - 169
Effects of Confinement on the Coupling between Nitrogen and Band States in InGaAs1-xNx/GaAs (x ≤ 0.025) Structures: Pressure and Temperature Studies
S. A. Choulis, B. A. Weinstein, T. J. C. Hosea, M. Kamal-Saadi, E. P. O'Reilly, A. R. Adams, W. Stolz
physica status solidi (b) 223 (1) (2001), pp. 151 - 156
Monitoring the sign reversal of the valence band exchange integral in (Ga,Mn)As
W. Heimbrodt, Th. Hartmann, P. J. Klar, M. Lampalzer, W. Stolz, K. Volz, A. Schaper, W. Treutmann, H.-A. Krug von Nidda, A. Loidl, T. Ruf, V. F. Sapega
Physica E 10 (1 - 3) (2001), pp. 175 - 180
Spatial solitons in a pumped semiconductor resonator
V. B. Taranenko, C. O. Weiss, W. Stolz
Optics Letters 26 (2) (2001), pp. 1574 - 1576
Gain spectra of (GaIn)(NAs) laser diodes for the 1.3-µm-wavelength regime
M. Hofmann, A. Wagner, C. Ellmers, C. Schlichenmeier, S. Schäfer, F. Höhnsdorf, J. Koch, W. Stolz, S. W. Koch, W. W. Rühle, J. Hader, J. V. Moloney, E. P. O'Reilly, B. Borchert, A. Yu. Egorov, and H. Riechert
Appl. Phys. Lett. 78 (20) (2001), pp. 3009 - 3011
High-efficiency (AlGa)As/GaAs solar cells grown by MOVPE using TBAs at low-temperatures and low V/III-ratios
C. Agert, F. Dimroth, U. Schubert, A. W. Bett, S. Leu, W. Stolz
Solar Energy Materials & Solar Cells 66 (1 - 4) (2001), pp. 637 - 644
Determination of ion incidence angles in plasma immersion ion implantation by means of a hollow multi-aperture target
M. Galonska, Ch. Gabor, R. W. Thomae, H. Klein, K. Volz and W. Ensinger
Nucl. Instr. Meth. Phys. Res. B 175 - 177 (2001), pp. 658 - 662
Pitting corrosion of aluminium coated with amorphous carbon films by aron ion beam assisted deposition at low process temperature
O. Lensch, K. Volz, M. Kiuchi and W. Ensinger
Nucl. Instr. Meth. Phys. Res. B 175 - 177 (2001), pp. 575 - 579
Heteroepitaxial SiC films grown in Si by CH4 plasma immersion ion implantation: Conditions and mechanism of their formation
K. Volz, Ch. Klatt and W. Ensinger
Nucl. Instr. Meth. Phys. Res. B 175 - 177 (2001), pp. 569 - 574
Inner wall coating of cylinders by plasma immersion ion implantation for corrosion protection
W. Ensinger, K. Volz and B. Enders
Surface and Coatings Technology 136 (1 - 3) (2001), pp. 202 - 206
Silicon carbide and amorphous carbon film formation by plasma immersion ion implantation: a comparison of methane and toluene as plasma forming gases
K. Volz, K. Baba, R. Hatada and W. Ensinger
Surface and Coatings Technology 136 (1 - 3) (2001), pp. 197 - 201
Studies on treatment homogeneity of plasma immersion ion implantation by an optical method
K. Volz, A. Hasse and W. Ensinger
Surface and Coatings Technology 136 (1 - 3) (2001), pp. 80 - 84bis 2000
2000
Structural properties of (GaIn)(NAs)/GaAs MQW structures grown by MOVPE
F. Höhnsdorf, J. Koch, A. Hasse, K. Volz, A. Schaper, W. Stolz, C. Giannini, L. Tapfer
Physica E 8 (3) (2000), pp. 205 - 209
Structural Properties of (GaIn)(AsN)/GaAs MQW Structures Grown by MOVPE
C. Giannini, E. Carlino, L. Tapfer, F. Höhnsdorf, J. Koch, and W. Stolz
MRS Symp. "GaN and Related Alloys" Boston, USA, Proceedings Vol. 595 (1999), W3.54.1
MRS Internet Journal of Nitride Semiconductor Research (5) 1 (2000), art. no.-W3.54
Nitrogen-induced band formation in GaNxAs1-x studied by photoluminescence under hydrostatic pressure and photomodulated reflectance
P. J. Klar, P. M. A. Vicente, H. Grüning, W. Heimbrodt, J. Koch, F. Höhnsdorf, W. Stolz & J. Camassel
High Pressure Research 18 (1 - 6) (2000), pp. 29 - 34
Growth of antimony-based materials in a multiwafer planetary MOVPE-reactor
C. Agert, P. Lanyi, O. V. Sulima, W. Stolz, and A. W. Bett
IEE Optoelectronics 147 (3) (2000), pp. 188 - 192
Strain-induced modulation versus superlattice ordering in epitaxial (GaIn)P layers
J. Jiang, A. K. Schaper, Z. Spika, and W. Stolz
Phys. Rev. B 62 (23) (2000), pp. 15826 - 15833
Disorder-induced dephasing in semiconductors
S. Weiser, T. Meier, J. Möbius, A. Euteneuer, E. J. Mayer, W. Stolz, M. Hofmann, W. W. Rühle, P. Thomas, and S. W. Koch
Phys. Rev. B 61 (19) (2000), pp. 13088 - 13089
Morphological aspects of continuous and modulated epitaxial growth of (GaIn)P
J. Jiang, A. K. Schaper, Z. Spika, and W. Stolz
J. Appl. Phys. 88 (6) (2000), pp. 3341 - 3348
Structural Investigations of (GaIn)(NAs)/GaAs Multi-Quantum-Wells by Transmission Electron Microscopy
K. Volz, A. Hasse, A. K. Schaper, T. E. Weiric, F. Höhnsdorf, J. Koch and W. Stolz
MRS Proceedings Vol. 618 (2000), p. 291 - 296
From N isoelectronic impurities to N-induced bands in GaNxAs1-x alloy
P. J. Klar, H. Grüning, W. Heimbrodt, J. Koch, F. Höhnsdorf, W. Stolz, P. M. A. Vicente, and J. Camassel
Appl. Phys. Lett. 76 (23) (2000), pp. 3439 - 3441
Observations of interaction-assisted hopping transport in GaAs/Ga1-xAlxAs quantum wells
J. E. Golub, R. Eichmann, G. Strasser, G. Bernatz, S. Nau, W. Stolz, P. Thomas
Journal of Luminescence 91 (1 - 2) (2000), pp. 7 - 12
TEM Investigations of (GaIn)(NAs)/GaAs Multi-Quantum Wells grown by MOVPE
A. Hasse, K. Volz, A. K. Schaper, J. Koch, F. Höhnsdorf, W. Stolz
Crystal Research and Technology 35 (6 - 7) (2000), pp. 787 - 792
Optical characterisation of MOVPE-grown Ga1-xMnxAs semimagnetic semiconductor layers
Th. Hartmann, M. Lampalzer, W. Stolz, K. Megges, J. Lorberth, P. J. Klar, W. Heimbrodt
Thin Solid Films 364 (1 - 2) (2000), pp. 209 - 212
Investigation of Disordered Semiconductor Quantum Wells by Coherent Excitation Spectroscopy
A. Euteneuer, E. Finger, W. Stolz, T. Meier, P. Thomas, S. W. Koch, M. Hofmann, W. W. Rühle, R. Hey, K. H. Ploog
physica status solidi (a) 178 (1) (2000), pp. 183 - 188
Normal-Mode Linewidths in a Semiconductor Microcavity with Various Cavity Qualities
M. Hofmann, D. Karaiskaj, C. Ellmers, T. Maxisch, F. Jahnke, H.-J. Kolbe, G. Weiser, R. Rettig, S. Leu, W. Stolz, S. W. Koch, W. W. Rühle
physica status solidi (a) 178 (1) (2000), pp. 179 - 181
(GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser with ultrabroad temperature operation range
A. Wagner, C. Ellmers, F. Höhnsdorf, J. Koch, C. Agert, S. Leu, M. Hofmann, W. Stolz, and W. W. Rühle
Appl. Phys. Lett. 76 (3) (2000), pp. 271 - 272
LP-MOVPE growth of carbon doped (InGa)P/GaAs HBT using an all-liquid source configuration
P. Velling, M. Agethen, E. Herenda, W. Prost, W. Stolz, F. J. Tegude
Proc. 26th Int. Symp. "Compound Semiconductors", Berlin (1999),
Inst. Phys. Conf. Ser. 166 (2000), p. 71
Quantitative topographic assessment of Cu incorporation in GaAs
M. Bäumler, R. Stibal, W. Stolz, Th. Steinegger, M. Jurisch, M. Maier, W. Jantz
Journal of Crystal Growth 210 (1 - 3) (2000), pp. 207 - 211
Alternative N-, P-, As-precursors for III/V-epitaxy
W. Stolz
Journal of Crystal Growth 209 (2 - 3) (2000), pp. 272 - 278
Strain-driven transition from stepped interfaces to regularly spaced macrosteps in (GaIn)As/Ga(PAs) symmetrically strained superlattices
C. Giannini, T. Baumbach, D. Lübbert, R. Felici, L. Tapfer, T. Marschner, W. Stolz, N. Y. Jin-Phillipp and F. Phillipp
Phys. Rev. B 61 (3) (2000), pp. 2173 - 2179
Coherence in real space: the transition range from bulk to confined states studied by the Franz-Keldysh effect
H. J. Kolbe, C. Agert, W. Stolz, G. Weiser
Physica E 6 (1 - 4) (2000), pp. 173 - 176
Optical characterization of (GaIn)(NAs)/GaAs MQW structures
J. Koch, F. Höhnsdorf und W. Stolz
Journal of Electronic Materials 29 (1) (2000), pp. 165 - 168
Effect of MOVPE growth interruptions on the gallium arsenide interior interface morphology
G. Bernatz, S. Nau, R. Rettig und W. Stolz
Journal of Electronic Materials 29 (1) (2000), pp. 129 - 133
Emission Dynamics and Gain of (GaIn)(NAs)/GaAs Lasers
A. Wagner, C. Ellmers, F. Hohnsdorf, J. Koch, S. Leu, W. Stolz, M. Hofmann, W. W. Rühle,
physica status solidi (b) 221 (1) (2000), pp. 567 - 569
100 fs Carrier Dynamics in GaAs under 100 nm Diameter Apertures
J. Hetzler, A. Brunner, M. Wegener, S. Leu, S. Nau, W. Stolz
physica status solidi (b) 221 (1) (2000), pp. 425 - 428
Coherent excitation spectroscopy of disordered quantum-well structures
E. Finger, S. Kraft, A. Euteneuer, M. Hofmann, W. Stolz, W. W. Rühle
physica status solidi (b) 221 (1) (2000), pp. 373 - 378
Composition and structure of SiCx:H films formed by plasma immersion ion implantation from a methane plasma
K. Volz, Ch. Klatt, W. Ensinger
Mat. Res. Soc. Symp. Proc. 609 (2000), p. 271
Heteroepitaxial growth of 3C-SiC on (100) silicon by C60 and Si molecular beam epitaxy
K. Volz, S. Schreiber, J. W. Gerlach, W. Reiber, B. Rauschenbach, B. Stritzker, W. Assmann and W. Ensinger
Materials Science and Engineering A 289 (1 - 2) (2000), pp. 255 - 264
Nitrogen plasma immersion ion implantation and silicon sputter deposition combined with methane implantation as an in-line process for improving corrosion and wear performance of stainless steels
K. Volz, B. Enders and W. Ensinger
Surface and Coatings Technology 128 - 129 (2000), pp. 479 - 483
Tantalum nitride films formed by ion beam assisted deposition: analysis of the structure in dependence on the ion irradiation intensity
K. Volz, M. Kiuchi and W. Ensinger
Surface and Coatings Technology 128 - 129 (2000), pp. 298 - 302
C-SiC-Si gradient films formed on silicon by ion beam assisted deposition at room temperature
K. Volz, M. Kiuchi, M. Okumura and W. Ensinger
Surface and Coatings Technology 128 - 129 (2000), pp. 274 - 279
Ion-beam assisted deposition of tube inner walls by plasma immersion ion implantation
W. Ensinger and K. Volz
Surface and Coatings Technology 128 - 129 (2000), pp. 270 - 273
Plasma immersion ion implantation of complex-shaped objects: an experimental study on the treatment homogeneity
W. Ensinger, K. Volz and T. Höchbauer
Surface and Coatings Technology 128 - 129 (2000), pp. 265 - 269
Ion beam-assisted deposition of nitrides of the 4th group of transition metals
W. Ensinger, K. Volz and M. Kiuchi
Surface and Coatings Technology 128 - 129 (2000), pp. 81 - 84
Thin film oxides as probe for homogeneity measurements of 3-dimensional objects treated by plasma immersion ion implantation
W. Ensinger and K. Volz
Nucl. Instr. Meth. Phys. Res. B 166 - 167 (2000), pp. 154 - 158
Ammonia plasma immersion ion implantation into silicon: Composition and structure of the resulting silicon-nitrogen-hydrogen system
K. Volz, B. Rauschenbach, C. Klatt and W. Ensinger
Nucl. Instr. Meth. Phys. Res. B 166 - 167 (2000), pp. 75 - 81
1999
Confinement effects in bulk samples derived from the Franz-Keldysh effect
H. J. Kolbe, C. Agert, W. Stolz, and G. Weiser
Phys. Rev. B 59 (23) (1999), pp. 14896 - 14898
Investigation of strain induced patterning in superlattices by grazing incidence diffraction - comparison of morphological and strain ordering
G. T. Baumbach, C. Giannini, D. Lübbert, R. Felici, L. Tapfer, T. Marschner and W. Stolz
Journal of Physics D: Appl. Phys. 32 (10A) (1999), A212 - A215
Optical Spectroscopic Studies of N-Related Bands in Ga(N,As)
H. Grüning, L. Chen, Th. Hartmann, P. J. Klar, W. Heimbrodt, F. Höhnsdorf, J. Koch and W. Stolz
physica status solidi (b) 215 (1) (1999), pp. 39 - 45
Experimental investigation of structures of interior interfaces in GaAs
G. Bernatz, S. Nau, R. Rettig, H. Jänsch, and W. Stolz
J. Appl. Phys. 86 (12) (1999), pp. 6752 - 6757
TBAs and TBP - improved group V sources for MOVPE
W. Stolz and T. Whittaker
Compound Semiconductor 5 (1999), p. 29
Patterned growth of (AlGa)As using metalorganic vapor-phase epitaxy
L. Hofmann, A. Knauer, I. Rechenberg, M. Weyers, W. Stolz
Journal of Crystal Growth 206 (4) (1999), pp. 255 - 262
DBR lasers emitting at 1060 nm with first-order grating in InGaP waveguide layer
L. Hofmann, A. Klehr, A. Knauer, V. B. Smirnitski, W. Stolz
Electronics Letters 35 (11) (1999), pp. 902 - 903
Coherent Excitation Spectroscopy on Inhomogeneous Exciton Ensembles
A. Euteneuer, E. Finger, M. Hofmann, W. Stolz, T. Meier, P. Thomas, S. W. Koch, W. W. Rühle, R. Hey and K. Ploog
Phys. Rev. Lett. 83 (10) (1999), pp. 2073 - 2076
Linewidths in a semiconductor microcavity with variable strength of normal-mode coupling
D. Karaiskaj, T. Maxisch, C. Ellmers, H.-J.Kolbe, G. Weiser, R. Rettig, S. Leu, W. Stolz, M. Hofmann, F. Jahnke, S. W. Koch, and W. W. Rühle
Phys. Rev. B 59 (21) (1999), pp. 13525 - 13527
Magnetoexciton quantum beats: influence of Coulomb correlations
M. Koch, S. T. Cundiff, W. H. Knox, J. Shah, W. Stolz
Solid State Communications 111 (10) (1999), pp. 553 -558
Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelenghts in the range 1.28 - 1.38 µm
F. Höhnsdorf, J. Koch, S. Leu, W. Stolz, B. Borchert, M. Druminski
Electronics Letters 35 (7) (1999), pp. 571 - 572
Ultrafast (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser for the 1.3 µm wavelength regime
C. Ellmers, F. Höhnsdorf, J. Koch, C. Agert, S. Leu, D. Karaiskaj, M. Hofmann, W. Stolz, and W. W. Rühle
Appl. Phys. Lett. 74 (16) (1999), pp. 2271 - 2273
Excitonic wave packets observed in space- and time-resolved pump and probe experiments
R. Otremba, S. Grosse, M. Koch, J. Feldmann, V. M. Axt, T. Kuhn, W. Stolz
Solid State Communications 109 (5) (1999), pp. 317 - 322
Ultrafast nonlinear subwavelength solid immersion spectroscopy at T = 8K
M. Vollmer, H. Giessen, W. Stolz, W. W. Rühle, L. Ghislain, and V. Elings
Appl. Phys. Lett. 74 (13) (1999), pp. 1791 - 1793
Optically pumped (GaIn)As/Ga(PAs) vertical-cavity surface-emitting lasers with optimized dynamics
C. Ellmers, M. R. Hofmann, D. Karaiskaj, S. Leu, W. Stolz, W. W. Rühle, and M. Hilpert
Appl. Phys. Lett. 74 (10) (1999), pp. 1367 - 1369
Ultrafast nonlinear subwavelength solid immersion spectroscopy at T = 8K: an alternative to nonlinear scanning near-field optical microscopy
M. Vollmer, H. Giessen, W. Stolz, W. W. Rühle, A. Knorr, S. W. Koch, L. Ghislain, V. Elings
Journal of Microscopy 194 (2 - 3) (1999), pp. 523 - 527
LP-MOVPE grown GaAs- and InP-based HBTs using all-liquid alternative sources
P. Veiling, M. Agethen, E. Herenda, W. Prost, W. Stolz, F.-J. Tegude
11th Int. Conf. "Indium Phosphide and Related Materials" (1999), pp. 467 - 470
Structural investigations of silicon carbide films formed by fullerene carbonization of silicon
K. Volz, S. Schreiber, M. Zeitler, B. Rauschenbach, B. Stritzker and W. Ensinger
Surface and Coatings Technology 122 (2 - 3) (1999), pp. 101 - 107
Formation of hafnium nitride films by medium-energy ion-beam-assisted deposition
K. Volz, M. Kiuchi and W. Ensinger
Surface and Coatings Technology 120 - 121 (1999), pp. 353 - 357
Three-dimensional dose uniformity of plasma immersion ion implantation shown with the example of macro-trenches
W. Ensinger, K. Volz and T. Höchbauer
Surface and Coatings Technology 120 - 121 (1999), pp. 347 - 352
An apparatus for in-situ or sequential plasma immersion ion beam treatment in combination with r. f. sputter deposition or triode d. c. sputter deposition
W. Ensinger, K. Volz and B. Enders
Surface and Coatings Technology 120 - 121 (1999), pp. 343 - 346
Synthesis of buried silicon oxide layers by water plasma immersion ion implantation
I. Großhans, K. Volz, W. Ensinger and B. Rauschenbach
Nucl. Instr. Meth. Phys. Res. B 155 (1 - 2) (1999), pp. 67 - 74
Low-energy ion assisted deposition of epitaxial gallium nitride films
J. W. Gerlach, D. Schrupp, K. Volz, M. Zeitler, B. Rauschenbach and A. Anders
Nucl. Instr. Meth. Phys. Res. B 148 (1 - 4) (1999), p. 406 - 410
Influence of substrate temperature on damage buildup and removal of ion implanted gallium nitride
C. Liu, A. Wenzel, K. Volz and B. Rauschenbach
Nucl. Instr. Meth. Phys. Res. B 148 (1 - 4) (1999), pp. 396 - 400
Formation of crystalline SiC films by CH4 plasma immersion ion implantation into Si
K. Volz, B. Rauschenbach, B. Stritzker and W. Ensinger
Nucl. Instr. Meth. Phys. Res. B 148 (1 - 4) (1999), pp. 540 - 544
1998
GaAs-based VCSEL-structures with strain-compensated (GaIn)As/Ga(PAs)-MQWH active regions grown by using TBAs and TBP
C. Ellmers, S. Leu, R. Rettig, M. Hofmann, W. W. Rühle, W. Stolz
Journal of Crystal Growth 195 (1 - 4) (1998), pp. 630 - 636
Investigations of (GaIn)(NAs) bulk layers and (GaIn)(NAs)/GaAs multiple quantum well structures grown using tertiarybutylarsine (TBAs) and 1,1-dimethylhydrazine (UDMHy)
F. Höhnsdorf, J. Koch, C. Agert, W. Stolz
Journal of Crystal Growth 195 (1 - 4) (1998), pp. 391 - 396
C- and O-incorporation in (AlGa)As epitaxial layers grown by MOVPE using TBAs
S. Leu, F. Höhnsdorf, W. Stolz, R. Becker, A. Salzmann, A. Greiling
Journal of Crystal Growth 195 (1 - 4) (1998), pp. 98 - 104
Si-doping of MOVPE grown InP and GaAs by using the liquid Si source ditertiarybutyl silane
S. Leu, H. Protzmann, F. Höhnsdorf, W. Stolz, F. Steinkirchner, E. Hufgard
Journal of Crystal Growth 195 (1 - 4) (1998), pp. 91 - 97
Growth of Ru doped semi-insulating InP by low pressure metalorganic chemical vapor deposition
A. Dadgar, O. Stenzel, L. Köhne, A. Näser, M. Straßburg, W. Stolz, D. Bimberg, H. Schumann
Journal of Crystal Growth 195 (1 - 4) (1998), pp. 69 - 73
X-ray diffraction study of intentionally disordered (GaIn)As/Ga(PAs) heterostructures
R. Rettig, T. Marschner, W. Stolz, and L. Tapfer
J. Appl. Phys. 84 (1) (1998), pp. 237 - 247
Atomic scale properties of interior interfaces of semiconductor heterostructures as detemined by quasi-digital highly selective etching and atomic force microscopy
R. Rettig, W. Stolz
Physica E 2 (1- 4) (1998), pp. 277 - 281
Coherent Excitation of Magnetoexciton Wavepackets
S. T. Cundiff, M. Koch, J. Shah, W. H. Knox, W. Stolz
physica status solidi (b) 206 (1) (1998), pp. 77 - 85
Structural investigations of chromium nitride films formed by ion beam-assisted deposition
K. Volz, M. Kiuchi and W. Ensinger
Surface and Coatings Technology 108 - 109 (1998), pp. 303 - 307
Microscopy of SiC Layers Grown by C60 Deposition on Si (100)
R. Scholz, U. Gösele, K. Volz and B. Rauschenbach
Jpn. J. Appl. Phys. 37 (11) (1998), pp. 6090 - 6093
Microstructure and composition of titanium nitride formed by ion beam enhanced nitrogen sorption of evaporated titanium under argon ion irradiation
W. Ensinger and K. Volz
Materials Science and Engineering A 253 (1 - 2) (1998), pp. 234 - 239
Ion implantation in GaN at liquid-nitrogen temperature: Structural characteristics and amorphization
C. Liu, B. Mensching, M. Zeitler, K. Volz, and B. Rauschenbach
Phys. Rev. B 57 (4) (1998), pp. 2530 - 2535
Structural investigations of titanium nitride films formed by plasma immersion ion implantation
K. Volz, W. Ensinger, B. Stritzker and B. Rauschenbach
Surface and Coatings Technology 103 - 104 (1998), pp. 257 - 261
Formation of silicon carbide and amorphous carbon films by pulse biasing silicon to a high voltage in a methane electron cyclotron resonance microwave plasma
K. Volz, W. Ensinger, W. Reiber, B. Rauschenbach and B. Stritzker
Journal of Materials Research 13 (7) (1998), p. 1765 - 1768
Formation of silicon carbide and nitride by ECR microwave plasma immersion ion implantation
K. Volz, W. Ensinger, B. Rauschenbach and B. Stritzker
Nucl. Instr. Meth. Phys. Res. B 141 (1 - 4) (1998), pp. 663 - 669
Formation of silicon nitride layers by nitrogen ion irradiation of silicon biased to a high voltage in an electron cyclotron resonance microwave plasma
W. Ensinger, K. Volz, G. Schrag, B. Stritzker, and B. Rauschenbach
Appl. Phys. Lett. 72 (10) (1998), 1164
Synthesis of epitaxial 3C-SiC by C60 carbonization of silicon on sapphire
K. Volz, J. Müller, W. Reiber, B. Rauschenbach and B. Stritzker
Carbon 36 (5 - 6) (1998), pp. 817 - 820
Composition and microstructure of titanium nitride formed on Ti6Al4V by nitrogen plasma immersion ion implantation
M. Rinner, K. Volz, W. Ensinger, W. Assmann and B. Rauschenbach
Surface and Coatings Technology 100 - 101 (1998), pp. 366 - 371
1997
Relaxation Dynamics of Electron-Hole Pairs Studied by Spatiotemporal Pump and Probe Experiments
S. Grosse, R. Arnold, G. von Plessen, M. Koch, J. Feldmann, V. M. Axt, T. Kuhn, R. Rettig, W. Stolz
physica status solidi (b) 204 (1) (1997), pp. 147 - 150
Biexcitonic binding energies in the transition regime from three- to two-dimensional semiconductors
A. Euteneuer, J. Möbius, R. Rettig, E. J. Mayer, M. Hofmann, W. Stolz, E. O. Göbel, and W. W. Rühle
Phys. Rev. B 56 (16) (1997), R10028 - R10031
Diffuse X-ray reflection from multilayers with stepped interfaces
V. Holý, C. Giannini, L. Tapfer, T. Marschner, W. Stolz
Phys. Rev. B 55 (15) (1997), pp. 9960 - 9968
Erratum: Phys. Rev. B 56 (15) (1997), p. 9975
Thickness modulation in symmetrically strained III-V semiconductor superlattices grown by MOVPE
N. Y. Jin-Phillipp, F. Phillipp, T. Marschner, W. Stolz
Journal of Materials Science: Materials in Electronics 8 (5) (1997), pp. 289 - 299
Confinement Dependence of Biexcitonic Binding Energies in Semiconductor Quantum Wells
A. Euteneuer, J. Möbius, R. Rettig, M. Hofmann, E. J. Mayer, W. Stolz, E. O. Göbel, W. W. Rühle
physica status solidi (a) 164 (1) (1997), pp. 253 - 258
Structural characteristics of highly ordered (GaIn)P
J. Jiang, A. K. Schaper, Z. Spika, W. Stolz, P. Werner, and L. Tóth
Conference "Microscopy of Semiconducting Materials", Oxford (1997),
Inst. Phys. Conf. Ser. 157 (1997), pp. 261 - 264
Effects of Coulomb interaction in intentionally disordered semiconductor superlattices
G. Richter, W. Stolz, P. Thomas, S. W. Koch, K. Maschke, I. P. Zvyagin
Superlattices and Microstructures 22 (4) (1997), pp. 475 - 480
Structural ordering and interface morphology in symmetrically strained (GaIn)As/Ga(PAs) superlattices grown on off-oriented GaAs(100)
C. Giannini, L. Tapfer, Y. Zhuang, L. DeCaro, T. Marschner and W. Stolz
Phys. Rev. B 55 (8) (1997), pp. 5276 - 5283
Growth and structural properties of (GaIn)As/Ga(PAs) intentionally disordered superlattice structures grown by metalorganic vapor phase epitaxy
R. Rettig, T. Marschner, L. Tapfer, W. Stolz, E. O. Göbel
Journal of Crystal Growth 170 (1 - 4) (1997), pp. 748 - 751
Correlation of ordering formation and surface structure in (GaIn)P using modulated MOVPE
Z. Spika, C. Zimprich, W. Stolz, E. O. Göbel, J. Jiang, A. Schaper, P. Werner
Journal of Crystal Growth 170 (1 - 4) (1997), pp. 257 - 262
Properties of (Ga0.47In0.53)As epitaxial layers grown by metalorganic vapor phase epitaxy (MOVPE) using alternative arsenic precursors
H. Protzmann, F. Höhnsdorf, Z. Spika, W. Stolz, E. O. Göbel, M. Müller, J. Lorberth
Journal of Crystal Growth 170 (1 - 4) (1997), pp. 155 - 160
Lateral periodicity in highly-strained (GaIn)As/Ga(PAs) superlattices investigated by X-ray scattering techniques
Y. Zhuang, C. Giannini, L. Tapfer, T. Marschner, W. Stolz,
Nuovo Cimento della Societa Italiana di Fisica D 19 (2 - 4) (1997), pp. 377 - 383
Lattice expansion of Ca and Ar ion implanted GaN
C. Liu, B. Mensching, K. Volz, and B. Rauschenbach
Appl. Phys. Lett. 71 (16) (1997), 2313
Electron microscopy of SiC layers produced by fullerene carbonization of silicon
J. Müller, K. Volz, R. Scholz, B. Stritzker, B. Rauschenbach
European Journal of Cell Biology 74: 126-126 Suppl. 45 (1997)
Formation of Buried SiC Layers in Silicon by Ion Beam Synthesis
K. Volz, J. K. N. Lindner and B. Stritzker
Materials Science Forum 248 - 249 (1997), pp. 237 - 240
Ion Beam Induced Epitaxial Crystallization of Buried SiC Layers in Silicon
J. K. N. Lindner, K. Volz and B. Stritzker
Materials Science Forum 248 - 249 (1997), pp. 73 - 78
Ion beam modification of Si/SiC/Si layer systems
K. Volz, J. K. N. Lindner and B. Stritzker
Nucl. Instr. Meth. Phys. Res. B 127 - 128 (1997), pp. 355 - 359
1996
Spectrally resolved four-wave mixing experiments on bulk GaAs with 14-fs pulses
M. U. Wehner, D. Steinbach, M. Wegener, T. Marschner, and W. Stolz
J. Opt. Soc. Am. B 13 (5) (1996), pp. 977 - 980
Non-Markovian Relaxation in GaAs: Four-Wave Mixing Experiments Using 15 fs Pulses
M. Wegener, M. U. Wehner, D. Steinbach, L. Bányai, D. B. Tran-Thoai, E. Reitsamer, H. Haug & W. Stolz
Proc. 23rd Int. Conf. "Physics of Semiconductors", Berlin (1996)
Eds. M. Scheffler and R. Zimmermann, World Scientific (Singapore 1996), pp. 633 - 640
Structural and Electronic Properties of Ordered (GaIn)P
Z. Spika, J. Jiang, C. Zimprich, P. Großmann, A. Schaper, W. Stolz, E. O. Göbel, P. Werner & J. Feldmann
Proc. 23rd Int. Conf. "Physics of Semiconductors", Berlin (1996)
Eds. M. Scheffler and R. Zimmermann, World Scientific (Singapore 1996), pp. 465 - 468
Optical Coherence in Semiconductors: Strong Emission Mediated by Nondegenerate Interactions
S. T. Cundiff, M. Koch, W. H. Knox, J. Shah, and W. Stolz
Phys. Rev. Lett. 77 (6) (1996), pp. 1107 - 1110
Disorder mediated biexcitonic beats in semiconductor quantum wells
T. F. Albrecht, K. Bott, T. Meier, A. Schulze, M. Koch, S. T. Cundiff, J. Feldmann, W. Stolz, P. Thomas, S. W. Koch, and E. O. Göbel
Phys. Rev. B 54 (7) (1996), pp. 4436 - 4439
Investigations of the strutural stability of highly strained [(Al)GaIn]As/Ga(PAs) multiple quantum wells
T. Marschner, S. Lutgen, M. Volk, W. Stolz, and E. O. Göbel
Appl. Phys. Lett. 69 (15) (1996), pp. 2249 - 2251
Optical bistability in symmetrically strained (GaIn)As/Ga(PAs) superlattices
G. Bastian, G. von Plessen, J. Feldmann, J. Hader, T. Marschner, W. Stolz, and E. O. Göbel
Appl. Phys. Lett. 69 (3) (1996), pp. 308 - 310
Metalorganic vapor phase epitaxy of InP using the novel P-source ditertiarybutyl phosphine (DitBuPH)
H. Protzmann, Z. Spika, B. Spill, G. Zimmermann, W. Stolz, E. O. Göbel, P. Gimmnich und J. Lorberth
Journal of Electronic Materials 25 (3) (1996), pp. 443 - 448
New Developments of Less Toxic Group-V Precursors for the Metalorganic Vapour Phase Epitaxy of III-V-Semiconductors: In-Situ-Formation of As-H Functions by Thermal ß-Elimination of Specific As-Trialkyl Compounds
G. Zimmermann, Z. Spika, T. Marschner, W. Stolz, E. O. Göbel, P. Gimmnich, R. Becker, J. Lorberth, A. Greiling and A. Salzmann
Jpn. J. Appl. Phys. 35 (4A) (1996), pp. 2035 - 2042
Transmission electron microscopy study on defect reduction in GaAs on Si heteroepitaxial layers grown by metalorganic vapor phase epitaxy
N. Y. Jin-Phillipp, F. Phillipp, T. Marschner, W. Stolz, E. O. Göbel
Journal of Crystal Growth 158 (1 - 2) (1996), pp. 28 - 36
Strain induced self organized growth of lateral periodic strained layer superlattices on off-oriented substrates by metalorganic vapour phase epitaxy
T. Marschner, L. Tapfer, N. Y. Jin-Phillipp, F. Phillipp, S. Lutgen, M. Volk, W. Stolz, E. O. Göbel
Solid-State Electronics 40 (1 - 8) (1996), pp. 819 - 823
Magnetooptical investigations of symmetrically strained (GaIn)As/Ga(PAs) multiple quantum well structures
M. Volk, S. Lutgen, T. Marschner, W. Stolz, E. O. Göbel, P. C. M. Christiansen, J. C. Maan
Solid-State Electronics 40 (1 - 8) (1996), pp. 585 - 589
Ion beam induced amorphization and recrystallization of Si/SiC/Si layer systems
K. Volz, J. K. N. Lindner and B. Stritzker
Nucl. Instr. Meth. Phys. Res. B 120 (1 - 4) (1996), pp. 133 - 138
Formation of buried epitaxial silicon carbide layers in silicon by ion beam synthesis
J. K. N. Lindner, K. Volz, U. Preckwinkel, B. Götz, A. Frohnwieser, B. Rauschenbach and B. Stritzker
Materials Chemistry and Physics 46 (2 - 3) (1996), pp. 147 - 155
Buried epitaxial layers of 3C-SiC in Si (100) and Si (111) by ion beam synthesis: A structural characterization
J. K. N. Lindner, K. Volz, and B. Stritzker
Inst. Phys. Conf. Ser. 142 Chapter 1 (1996), pp. 145 - 148
SiC Precipitate Formation during high Dose Carbon Implantation into Silicon
J. K. N. Lindner, K. Volz, and B. Stritzker
Mat. Res. Soc. Symp. Proc. 438 (1996), pp. 289 - 294
1995
Near-field optical characterization of the photoluminescence from partially ordered (GaIn)P
M. J. Gregor, P. G. Blome, R. G. Ulbrich, P. Grossmann, S. Grosse, J. Feldmann, W. Stolz, E. O. Göbel, D. J. Arent, M. Bode, K. A. Bertness, and J. M. Olson
Appl. Phys. Lett. 67 (24) (1995), pp. 3572 - 3574
Exciton-LO-Phonon Quantum Kinetics: Evidence of Memory Effects in Bulk GaAs
L. Banyai, D. B. Tran Thoai, E. Reitsamer, H. Haug, D. Steinbach, M. U. Wehner, M. Wegener, T. Marschner and W. Stolz
Phys. Rev. Lett. 75 (11) (1995), pp. 2188 - 2191
Carrier effective masses in symmetrically strained (GaIn)As/Ga(PAs) multiple-quantum-well structures
M. Volk, S. Lutgen, T. Marschner, W. Stolz, E. O. Göbel, P. C. M. Christiansen and J. C. Maan
Phys. Rev. B 52 (15) (1995), pp. 11096 - 11104
Structural investigations of the direct growth of AlGaAs/GaAs quantum wire structures by MOVPE
W. Stolz
Proc. of the NATO Adv. Res. Workshop "Low Dimensional Structures Prepared by Growth or Regrowth on Patterned Substrates",
Eds. K. Eberl, P. M. Petroff and P. Demeester, Ringberg in Rottach-Egern (1995), Kluwer Academic Publishers, Dordrecht (1995), ISBN 0-7923-3679-8
NATO ASI Series E 298 (1995), pp. 301 - 312
Design and application of a femtosecond optical parametric oscillator for time-resolved spectroscopy of semiconductor heterostructures
T. F. Albrecht, J. H. H. Sandmann, J. Feldmann, W. Stolz, E. O. Göbel, H. Hillmer, R. Lösch und W. Schlapp
Appl. Phys. B 60 (5) (1995), pp. 459 - 467
Atomic incorporation efficiencies for strained (GaIn)As/Ga(PAs) superlattice structures grown by metalorganic vapour phase epitaxy
S. Lutgen, T. Marschner, W. Stolz, E. O. Göbel, L. Tapfer
Journal of Crystal Growth 152 (1 - 2) (1995), pp. 1 - 13
Investigations on deep traps in GaAs and (AlxGa1-x)As bulk layers grown by metalorganic vapour-phase epitaxy using the new alternative arsenic precursor diethyl-tert-butylarsin
Z. Spika, G. Zimmermann, W. Stolz, E. O. Göbel, P. Gimmnich, J. Lorberth, A. Greiling, A. Salzmann, S. Weiß, U. Sudjadi, A. Bock, R. Kassing
Journal of Crystal Growth 146 (1 - 4) (1995), pp. 521 - 526
1994
Determination of excitonic binding energies in symmetrically strained (GaIn)As/Ga(AsP) multiple quantum wells using quantum beat spectroscopy
M. Koch, M. Volk, T. Meier, J. Feldmann, W. Stolz, P. Thomas, E. O. Göbel
Superlattices and Microstructures 15 (3) (1994), pp. 329 - 332
Strain-induced changes in epitaxial layer morphology of highly-strained III/V-semiconductor heterostructures
T. Marschner, S. Lutgen, M. Volk, W. Stolz, E. O. Göbel, N. Y. Jin-Phillipp, F. Phillipp
Superlattices and Microstructures 15 (2) (1994), pp. 183 - 186
Coherent dynamics of exciton wavepackets in semiconductor and heterostructures
J. Feldmann, M. Koch, E. O. Göbel, F. Jahnke, T. Meier, W. Schäfer, P. Thomas, S. W. Koch, H. Nickel, S. Luttgen and W. Stolz
Semiconductor Science and Technology 9 (1994), pp. 1965 - 1971
Rabi Flopping in Semiconductors
S. T. Cundiff, A. Knorr, B. Spill, J. Feldmann, W. Stolz, S. W. Koch, E. O. Göbel, H. Nickel
Proc. 9th Int. Conf. "Ultrafast Phenomena", Dana Point (1994),
Ed. P. F. Barbara, Springer (1994), ISBN 3540584552
GaAs substrate pretreatment and metalorganic vapour phase epitaxy of GaAs, AlAs and (AlGa)As using ß-eliminating trialkyl-As precursors
G. Zimmermann, Z. Spika, T. Marschner, B. Spill, W. Stolz, E. O. Göbel, P. Gimmnich, J. Lorberth, A. Greiling, A. Salzmann
Journal of Crystal Growth 145 (1 - 4) (1994), pp. 512 - 519
Excitonic and free-carrier polarizations of bulk GaAs studied by femtosecond coherent spectroscopy
A. Leitenstorfer, A. Lohner, K. Rick, P. Leisching, T. Elsaesser, T. Kuhn, F. Rossi, W. Stolz and K. Ploog
Phys. Rev. B 49 (23) (1994), pp. 16372 - 16380
Metalorganic vapor-phase epitaxy of III/V-semiconductors using alternative metalorganic-group-V-compounds decomposing under in-situ formation of group-V-H-functions
G. Zimmermann, Z. Spika, W. Stolz, E. O. Göbel, P. Gimmnich, J. Lorberth, A. Greiling, A. Salzmann
Proc. 20th Int. Symp. "GaAs and Related Compounds", Freiburg (1993),
Inst. Phys. Conf. Ser. 136 (1994), pp. 613 - 618
Femtosecond degenerate four-wave-mixing on unstrained (InGa)As/InP multiple-quantum-wells using an optical parametric oscillator
T. F. Albrecht, J. H. H. Sandmann, S. T. Cundiff, J. Feldmann, W. Stolz, E. O. Göbel
Solid-State Electronics 37 (4 - 6) (1994), pp. 1327 - 1331
Optical properties of symmetrically strained (GaIn)As/Ga(PAs) superlattices grown by metalorganic vapour phase epitaxy
S. Lutgen, T. F. Albrecht, T. Marschner, W. Stolz, E. O. Göbel
Solid-State Electronics 37 (4 - 6) (1994), p. 905 - 909
Direct epitaxial growth of (AlGa)As/GaAs quantum wires by orientation-dependent metalorganic vapour phase epitaxy
D. Bertram, B. Spill, W. Stolz, E. O. Göbel
Solid-State Electronics 37 (4 - 6) (1994), pp. 591 - 596
1993
Coherent excitonic and free carrier dynamics in bulk GaAs and heterostructures
T. Kuhn, E. Binder, F. Rossi, A. Lohner, K. Rick, P. Leisching, A. Leitenstorfer, T. Elsaesser, W. Stolz
Proc. of the NATO Adv. Res. Workshop "Coherent optical interactions in semiconductors",
Ed. R. T. Phillips, Cambridge (1993), Plenum Publishing Corporation (1994), ISBN 0-306-44737-1
NATO ASI Series B 330 (1994)
Improvements in the heteroepitaxial growth of GaAs on Si by MOVPE
T. Marschner, W. Stolz, E. O. Göbel, F. Phillipp, M. Müller, J. Lorberth
Materials Science and Engineering B 21 (2 - 3) (1993), pp. 266 - 269
Metal-organic vapour-phase epitaxial growth of symmetrically strained (GaIn)As/Ga(PAs) superlattices
S. Lutgen, T. Marschner, T. F. Albrecht, W. Stolz, E. O. Göbel, L. Tapfer
Materials Science and Engineering B 21 (2 - 3) (1993), pp. 249 - 252
Direct growth of (AlGa)As/GaAs quantum wires by metalorganic vapour phase epitaxy
D. Bertram, W. Stolz, E. O. Göbel
Journal of Crystal Growth 132 (1 - 2) (1993), pp. 179 - 180
Transient four-wave mixing on (InGa)As/InP multiple quantum wells using a femtosecond optical parametric oscillator
T. F. Albrecht, J. H. H. Sandmann, J. Feldmann, W. Stolz, E. O. Göbel, A. Nebel, C. Fallnich, and R. Beigang
Appl. Phys. Lett. 63 (14) (1993), pp. 1945 - 1947
Coherent excitonic and free-carrier polarizations of bulk GaAs studied by femtosecond photon-echo spectroscopy
A. Lohner, K. Rick. P. Leisching, A. Leitenstorfer, T. Elsässer, T. Kuhn, F. Rossi, and W. Stolz
Proc. 8th Int. Conf. "Hot Carriers in Semiconductors", Oxford (1993) in
Semiconductor Science and Technology 9 (5S) (1994), pp. 425 - 428
Coherent optical polarization of bulk GaAs studied by femtosecond photon-echo spectroscopy
A. Lohner, K. Rick, P. Leisching, A. Leitenstorfer, T. Elsässer, T. Kuhn, F. Rossi, and W. Stolz
Phys. Rev. Lett. 71 (1) (1993), pp. 77 - 80
Amino-arsine and -phosphine compounds for the MOVPE of III-V semiconductors
G. Zimmermann, H. Protzmann, T. Marschner, O. Zsebök, W. Stolz, E. O. Göbel, P. Gimmnich, J. Lorberth, T. Filz, P. Kurpas, W. Richter
Journal of Crystal Growth 129 (1 - 2) (1993), pp. 37 - 44
New group III aluminium and gallium hydride precursors for metal-organic vapour-phase epitaxy
R. Dorn, M. Müller, J. Lorberth, G. Zimmermann, H. Protzmann, W. Stolz, E. O. Göbel
Materials Science and Engineering B 17 (1 - 3) (1993), pp. 25 - 28
New alternative arsenic precursors for the metal-organic vapour-phase epitaxy of III-V semiconductors: in-situ formation of As-H functionality by ß elimination of specific metal-organic arsenic compounds
P. Gimmnich, A. Greiling, J. Lorberth, C. Thalmann, K. Rademann, G. Zimmermann, H. Protzmann, W. Stolz, E. O. Göbel
Materials Science and Engineering B 17 (1 - 3) (1993), pp. 21 - 24
1992
Synthesis of Gallane-Amine adducts as potential precursors for GaAs and (AlGa)As MOVPE processes and the crystal structure of the {gallane 1,3-bis(dimethylamino)propane} adduct H3Ga N(CH3)2(CH2)3N(CH3) 2
J. Lorberth, R. Dorn, S. Wocadlo, W. Massa, E. O. Göbel, T. Marschner, H. Protzmann, O. Zsebök, W. Stolz
Advanced Materials 4 (9) (1992), pp. 576 - 579
In-situ formation of As-H functions by ß-elimination of specific metalorganic arsenic compounds for the MOVPE of III/V semiconductors
G. Zimmermann, H. Protzmann, W. Stolz, E. O. Göbel, P. Gimmnich, A. Greiling, J. Lorberth, C. Thalmann, K. Rademann
Journal of Crystal Growth 124 (1 - 4) (1992), pp. 136 - 141
Metalorganic vapour phase epitaxy (MOVPE) of III/V-semiconductor heterostructures using alternative precursor molecules: new developments
W. Stolz
Proc. 12th General Conf. of the Condensed Matter Division of the European Physical Society, Prag (1992),
Physica Scripta T 45 (1992), pp. 186 - 191
Transient-grating experiments for the study of electron-hole separation in an electric field
J. Feldmann, P. Grossmann, W. Stolz, E. O. Göbel, and K. Ploog
Semiconductor Science and Technology 7 (3B) (1992), pp. B130 - B132
1991
Transient photoconductivity in amorphous Si1-xCx:H
A. Pohlmann, R. Fischer, R. Brüggemann, W. Stolz, E. O. Göbel
Journal of Non-Crystalline Solids 137 - 138 (1) (1991), pp. 547 - 550
Group III hydride precursors for the metalorganic vapour phase epitaxy (MOVPE) of (AlGa)As/GaAs heterostructures
H. Protzmann, T. Marschner, O. Zsebök, W. Stolz, E. O. Göbel, R. Dorn, J. Lorberth
Journal of Crystal Growth 115 (1 - 4) (1991), pp. 248 - 253
Halbleitmaterialien und -strukturen für die Optoelektronik und Photonik
E. O. Göbel, W. Elsäßer, W. Stolz
in "Halbleiter in Forschung und Technik: Grundlagen, Anwendungen und Perspektiven",
Hrsg. J. Werner, J. Weber, W. Rühle,
Expert Verlag Ehningen (1991), ISBN 3-8169-0707-5, p. 142
Dynamics and spectral characteristics of exciton bleaching in type-II AlxGa1-xAs/AlAs superlattices
J. Feldmann, E. Göbel, W. Stolz, K. Ploog, P. Dawson, C. T. Foxon
Superlattices and Microstructures 9 (2) (1991), pp. 241 - 244
Optical study of electronic states of In0.53Ga0.47As/In0.52Al0.48As quantum wells in high electric fields
K. Satzke, G. Weiser, W. Stolz, and K. Ploog
Phys. Rev. B 43 (3) (1991), pp. 2263 - 2271
Strain relaxation and influence of residual strain in GaAs and (AlGa)As/GaAs heterostructures grown on (100) Si by molecular beam epitaxy
W. Stolz, K. Nozawa, Y Horikoshi, L. Tapfer, K. Ploog
Proc. of the NATO Adv. Res. Workshop "Condensed Systems of Low Dimensionality",
Eds. J. L. Beeby, P. K. Bhattacharya, P. Ch. Gravelle, F. Koch, D. J. Lockwood, Marmaris (1990), Plenum Publishing Corporation (1991), ISBN 0-306-43887-9
NATO ASI Series B 253 (1991)
1990
Alternative precursors for the growth of (AlGa)As/GaAs modulation-doped heterostructures by metalorganic vapor-phase epitaxy
W. Stolz, H. Protzmann, E. Göbel, M. Hostalek, L. Pohl
Proc. 17th Int. Symp. "GaAs and Related Compounds", Jersey (1990)
Inst. Phys. Conf. Ser. 112 (1990), pp. 155 - 160
Transient Reshaping of intersubband absorption spectra in a ternary multiple quantum well structure
R. J. Bäuerle, T. Elsässer, H. Lobentanzer, W. Stolz, K. Ploog
Proc. 20th Int. Conf. "Physics of Semiconductors", Thessaloniki (1990),
Eds. E. M. Anastassakis, J. D. Joannopoulos, World Scientific Publishing (1990)
Absorption and electroabsorption spectra of (GaIn)As/(AlIn)As quantum wells and superlattices
K. Satzke, W. Stolz, G. Weiser
Proc. IEEE Conf. "Modulation Spectroscopy" (1990)
Influence of GaAs buffer layer growth and annealing conditions on the quality of GaAs/AlAs superlattices grown on (100) Si by molecular beam epitaxy
W. Stolz, G. E. Crook, L. Tapfer, K. Ploog
Proc. 1st Int. Conf. "Epitaxial Crystal Growth", Budapest (1990)
Ed. E. Lendvay, Trans Tech Publications Ltd. (1991), ISBN-10: 0878496165
Transient intersubband absorption spectra of hot electrons in a modulation-doped (GaIn)As/(AlIn)As multiple quantum well structure
R. J. Bäuerle, T. Elsässer, H. Lobentanzer, W. Stolz, K. Ploog
Proc. 20th Int. Conf. "Quantum Electronics"
Radiative recombination processes and fermi edge singularity in modulation doped n-type GaInAs/AlInAs multiple quantum wells
R. Cingolani, W. Stolz, Y. H. Zhang, K. Ploog
Journal of Luminescence 46 (2) (1990), pp. 147 - 154
Dopant incorporation in delta-doped GaAs layers studied by local vibrational-mode spectroscopy
W. Stolz, M. Hauser, K. Ploog, M. Ramsteiner, J. Wagner
Proc. Int. Symp. "Gallium Arsenide and Related Compounds", Bristol (1989)
Inst. Phys. Conf. Ser. 106 (1990), pp. 465 - 470
1989
Transient reshaping of intersubband absorption spectra due to hot electrons in a modulation-doped multiple-quantum-well structure
R. J. Bäuerle, T. Elsässer, H. Lobentanzer, W. Stolz, and K. Ploog
Phys. Rev. B 40 (14) (1989), pp. 10002 - 10005
Influence of interface quality on structural and optical properties of GaxIn1-xAs/AlyIn1-yAs superlattices lattice matched to (001) InP
L. Tapfer, W. Stolz, and K. Ploog
J. Appl. Phys. 66 (7) (1989), pp. 3217 - 3219
Hot carriers in (GaIn)As/(AlIn)As multiple quantum well structures studied by picoseceond infrared spectroscopy
T. Elsässer, R. J. Bäuerle, W. Kaiser, H. Lobentanzer, W. Stolz, K. Ploog
Conf. "Quantum Electronics and Laser Science", Techn. Digest Ser. 12, Optical Society of America, Washington (1989), p. 142
Screening of the n=2 excitonic resonance by hot carriers in an undoped Ga0.47In0.53As/Al0.48In0.52As multiple quantum well structure
H. Lobentanzer, W. Stolz, K. Ploog, R. J. Bäuerle, T. Elsässer
Solid-State Electronics 32 (12) (1989), pp. 1875 - 1879
Transient intersubband absorption spectra of hot electrons in a modulation-doped multiple-quantum-well structure
T. Elsässer, R. J. Bäuerle, W. Kaiser, H. Lobentanzer, W. Stolz, K. Ploog
Solid-State Electronics 32 (12) (1989), pp. 1707 - 1711
Incorporation of Si in δ-doped GaAs studied by local vibrational mode spectroscopy
J. Wagner, M. Ramsteiner, W. Stolz, M. Hauser, and K. Ploog
Appl. Phys. Lett. 55 (10) (1989), pp. 978 - 980
Electronic states and optical transitions in modulation-doped n-type GaxIn1-xAs/AlxIn1-xAs multiple quantum wells
R. Cingolani, W. Stolz, and K. Ploog
Phys. Rev. B 40 (5) (1989), pp. 2950 - 2955
Infrared stimulated emission in modulation doped Ga0.47In0.53As/Al0.48In0.52As quantum wells
R. Cingolani, W. Stolz, K. Ploog, M. Ferrera, C. Moro
Solid State Communications 72 (8) (1989), pp. 807 - 811
Transient absorption spectra of a modulation-doped Ga0.47In0.53As/Al0.48In0.52As multiple quantum well structure measured by picosecond infrared pulses
T. Elsässer, R. J. Bäuerle, W. Kaiser, H. Lobentanzer, W. Stolz, and K. Ploog
Appl. Phys. Lett 54 (3) (1989), pp. 256 - 258
Cooling of hot carriers in three- and two-dimensional Ga0.47In0.53As
H. Lobentanzer, W. Stolz, J. Nagle, and K. Ploog
Phys. Rev. B 39 (8) (1989), pp. 5234 - 5244
Optimized growth start and controlled formation of misfit dislocations for heteroepitaxial GaAs on (100) Si grown by migration-enhanced epitaxy
W. Stolz, Y. Horikoshi, M. Naganuma, K. Nozawa
Journal of Crystal Growth 95 (1 - 4) (1989), pp. 87 - 90
1988
Picosecond infrared spectroscopy of hot carriers in a modulation-doped (GaIn)As/(AlIn)As multiple quantum well structure
T. Elsässer, R. J. Bäuerle, W. Kaiser, H. Lobentanzer, W. Stolz, K. Ploog
Proc. 19th Int. Conf. "Physics of Semiconductors", Warsaw (1988), Ed. W. Zawadzki, p. 227
Picosecond infrared spectroscopy of hot carriers in a (GaIn)As multiple quantum well structure
T. Elsässer, R. J. Bäuerle, W. Kaiser, H. Lobentanzer, W. Stolz, K. Ploog
Proc. 16th Int. Conf. "Quantum Electronics", Tokyo (1988), p. 388
Carrier cooling in modulation-doped (GaIn)As/(AlIn)As multiple quantum well structures
H. Lobentanzer, W. Stolz, J. Nagle, K. Ploog
Proc. 16th Int. Conf. "Quantum Electronics", Tokyo (1988)
Saturation and blue shift of the excitonic resonance in a thin Ga0.47In0.53As/Al0.48In0.52As multiple-quantum-well structure
H. Lobentanzer, W. Stolz, and K. Ploog
Proc. 16th Int. Conf. "Quantum Electronics", Tokyo (1988), paper TuP27
Cooling of hot carriers in three- and two-dimensional (GaIn)As
H. Lobentanzer, W. Stolz, K. Ploog
Proc. 6th Int. Conf. "Ultrafast Phenomena", Kyoto (1988), Eds. T. Yajima, K. Yoshihara, C. B. Harris, S. Shionoya,
Springer-Series in Chemical Physics Bd. 48 Berlin (1988)
Intersubband absorption in a modulation-doped Ga0.47In0.53As/Al0.48In0.52As multiple quantum well structure
H. Lobentanzer, W. König, W. Stolz, K. Ploog, T. Elsässer, R. J. Bäuerle
Appl. Phys. Lett. 53 (7) (1988), pp. 571 - 573
Picosecond infrared spectroscopy of hot carriers in a modulation-doped Ga0.47In0.53As multiple-quantum-well structure
R. J. Bäuerle, T. Elsässer, W. Kaiser, H. Lobentanzer, W. Stolz, and K. Ploog
Phys. Rev. B 38 (6) (1988), pp. 4307 - 4310
Strain-released heteroexpitaxy of GaAs on (100) Si by migration enhanced epitaxy
W. Stolz, Y. Horikoshi, M. Naganuma, K. Nozawa
Workshop "Electronic Materials and Devices", Nagoya (1988)
Controlled Formation of Misfit Dislocations for Heteroepitaxial Growth of GaAs on (100) Si by Migration-Enhanced Epitaxy
W. Stolz, Y. Horikoshi and M. Naganuma
Jpn. J. Appl. Phys. 27 (6A) (1988), L1140 - L1143
Initial Growth Conditions of GaAs on (100) Si Grown by Migration-Enhanced Epitaxy
W. Stolz, M. Naganuma and Y. Horikoshi
Jpn. J. Appl. Phys. 27 (3A) (1988), L283 - L286
Optical and structural properties of GaAs grown on (100) Si by molecular-beam epitaxy
W. Stolz, F. E. G. Guimaraes, K. Ploog
J. Appl. Phys. 63 (2) (1988), pp. 492 - 499
1987
Position and character (Ɖ or x) of energy states in short-period (GaAs)m(AlAs)n superlattices
J. Nagle, M. Garriga, W. Stolz, T. Isu et K. Ploog
Proc. 3rd Int. Conf. "Modulated Semiconductor Structures", Montpellier (1987),
Journal de Physique Colloques 48 (5C) (1987), pp. C5-495 - C5-498
Absorption spectroscopy on Ga0.47In0.53As/Al0.48LIn0.52As multi-quantum-well heterostructures,
II. Subband structure
W. Stolz, J. C. Maan, M. Altarelli, L. Tapfer, K. Ploog
Phys. Rev. B 36 (8) (1987), pp. 4310 - 4315
Absorption spectroscopy on Ga0.47In0.53As/Al0.48LIn0.52As multi-quantum-well heterostructures,
I. Excitonic transitions
W. Stolz, J. C. Maan, M. Altarelli, L. Tapfer, K. Ploog
Phys. Rev. B 36 (8) (1987), pp. 4301 - 4309
Sharp Photoluminescence of GaAs/AlGaAs SQWs Grown on Si Substrate by MEE at 300°C
M. Naganuma, W. Stolz, Y. Horikoshi
Japan Society of Applied Physics, Proc. 19th Conf. "Solid State Devices and Materials", Tokyo (1987), p. 513
Cooling of hot carriers in Ga0.47In0.53As
H. Lobentanzer, H.-J. Polland, W. W. Rühle, W. Stolz, K. Ploog
Appl. Phys. Lett. 51 (9) (1987), pp. 673 - 675
Carrier cooling in undoped and modulation-doped Ga0.47In0.53As multiple quantum wells
H. Lobentanzer, W. W. Rühle, H.-J. Polland, W. Stolz, and K. Ploog
Phys. Rev. B 36 (5) (1987), pp. 2954 - 2957
Cooling of an electron-hole plasma in a Ga0.47In0.53As multiple-quantum-well structure
H. Lobentanzer, H.-J. Polland, W. W. Rühle, W. Stolz, and K. Ploog
Phys. Rev. B 36 (2) (1987), pp. 1136 - 1139
Cooling of photoexcited carriers in a Ga0.47In0.53As multiple quantum well
H. Lobentanzer, H.-J. Polland, W. W. Rühle, W. Stolz, and K. Ploog
Int. Conf. "Quantum Electronics" (1987), Opt. Soc. Am., paper TUGG40
Hot carrier-phonon interaction in three- and two-dimensional Ga0.47In0.53As
H. Lobentanzer, W. W. Rühle, W. Stolz, K. Ploog
Solid State Communications 62 (1) (1987), pp. 53 - 56
Effect of barrier configuration on excitonic recombination in Ga0.47In0.53As/Al0.48In0.52As multi quantum well structures
W. Stolz, J. Wagner, K. Ploog
Journal of Crystal Growth 81 (1 - 4) (1987), pp. 79 - 84
Effect of Barrier Configuration and Interface Quality on Structural and Electronic Properties of MBE-Grown AlxGa1-xAs/GaAs, AlxGa1-xSb/GaSb and AlxIn1-xAs/GaxIn1-xAs Superlattices
K. Ploog, W. Stolz, L. Tapfer
Chapter in: Thin Film Growth Techniques for Low-Dimensional Structures, R. F. C. Farrow, S. S. P. Parkin, P. J. Dobson, J. H. Neave, A. S. Arrott (Eds.), Springer, Boston, MA
NATO ASI Series B 163 (1987), pp. 5 - 19
1986
Structural Characterization of Ga0.47In0.53As/Al0.48In0.52As Superlattices Grown by Molecular Beam Epitaxy
L. Tapfer, W. Stolz, K. Ploog
Proc. 18th Int. Conf. "Solid State Devices and Materials" Tokyo (1986)
Japan Society Applied Physics (1986), pp. 603 - 605
High-resolution double-crystal X-ray diffraction for improved assessment of modulated semiconductor structures
L. Tapfer, W. Stolz, A. Fischer, K. Ploog
Surface Science 174 (1 - 3) (1986), pp. 88 - 93
Effect of barrier configuration on excitonic recombination in Ga.47In.53As/Al.48In.52As multi quantum well structures
J. Wagner, W. Stolz, J. Knecht, K. Ploog
Solid State Communications 57 (10) (1986), pp. 781 - 784
Excitonic transitions in quantum wells composed of either binary or ternary III-V semiconductors grown by molecular beam epitaxy
J. L. de Miguel, Y. Ohmori, W. Stolz, L. Tapfer, K. Ploog, J. Wagner
Proc. 12th Int. Symp. "GaAs and Related Compounds" Karuizawa (1985)
Inst. Phys. Conf. Ser. 79 (1986), pp. 457 - 462
1985
Optical and structural properties of molecular beam epitaxial grown Ga0.47In0.53As/Al0.48In0.52As superlattices, emitting at 1.55 µm at room temperature
W. Stolz, L. Tapfer, A. Breitschwerdt & K. Ploog
Appl. Phys. A 38 (2) (1985), pp. 97 - 102
Luminescence excitation spectroscopy on Ga0.47In0.53As/Al0.48In0.52As quantum-well heterostructures
J. Wagner, W. Stolz, and K. Ploog
Phys. Rev. B 32 (6) (1985), pp. 4214 - 4216
Free-exciton luminescence in GaSb quantum wells confined by short-period AlSb-GaSb superlattices
K. Ploog, Y. Ohmori, H. Okamoto, W. Stolz, J. Wagner
Appl. Phys. Lett. 47 (4) (1985), pp. 384 - 386
Influence of growth conditions on the optical and structural properties of (GaIn)As/(AlIn)As superlattices grown by molecular beam epitaxy
W. Stolz, L. Tapfer, K. Ploog
Proc. Eur. Materials Research Society Symp. Strasbourg (1985)
J. de Phys. Suppl. (1985), p. 219
Luminescence of (GaIn)As/(AlIn)As quantum well heterostructures grown by molecular beam epitaxy
W. Stolz, K. Fujiwara, L. Tapfer, H. Oppolzer, K. Ploog
Proc. 11th Int. Symp. "GaAs and Related Compounds" Biarritz (1984)
Inst. Phys. Conf. Ser. 74 (1985), p. 139
1982
Impurity Diffusion in Amorphous Silicon and its Implications for Solar Cells
S. Kalbitzer, M. Reinelt & W. Stolz
In: W. H. Bloss, G. Grassi (Eds.) Fourth E.C. Photovoltaic Solar Energy Conference, Springer Dordrecht
Proc. 4th Int. Conf. "Photovoltaic Solar Energy" Stresa (1982), pp. 1059 - 1062