Hauptinhalt

Fields of expertise Prof. Sergei Baranovskii

  • Inhalt ausklappen Inhalt einklappen Transport of charge carriers in organic disordered semiconductorsTransport of charge carriers in organic disordered semiconductors

    Edited Book: "Charge Transport in Disordered Solids with Applications in Electronics", edited by Sergei Baranovski (John Wiley and Sons, Ltd., Chichester, England, 2006).

    Book Chapter: S.D. Baranovskii and O. Rubel, “Description of charge transport in disordered organic materials” in "Charge Transport in Disordered Solids with Applications in Electronics", edited by S.D. Baranovskii (John Wiley and Sons, Ltd., Chichester, England, 2006), Chap. 6, pp. 221-266.

    Book Chapter: S.D. Baranovskii, O. Rubel, F. Jansson, R. Österbacka, "Description of Charge Transport in Disordered Organic Materials", in "Advances in Polymer Science", eds. G. Meller, T. Grasser, (Springer, Berlin, Heidelberg, 2010).

    Review Article: S. D. Baranovskii, "Mott Lecture: Description of Charge Transport in Disordered Organic Semiconductors: Analytical Theories and Computer Simulations", Phys. Stat. Solidi A 215, 1700676 (2018). pss(a) text

    Review Article: A. V. Nenashev, J. O. Oelerich, and S. D. Baranovskii, "Theoretical tools for description of charge transport in disordered organic semiconductors", J. Phys.: Condens Matter 27, 093201 (2015). J. Phys. Cond. Matter text

    Review Article: S. D. Baranovskii, "Theoretical description of charge transport in disordered organic semiconductors", Phys. Stat. Solidi B 251, 487-525 (2014). pss(b) text

    J. O. Oelerich, A. V. Nenashev, A. V. Dvurechenskii, F. Gebhard, and S. D. Baranovskii, "Field dependence of hopping mobility: Lattice models against spatial disorder", Phys. Rev. B 96, 195208 (2017). PRB text

    A. V. Nenashev, J. O. Oelerich, A. V. Dvurechenskii, F. Gebhard, and S. D. Baranovskii, "Fundamental characteristic length scale for the field dependence of hopping charge transport in disordered organic semiconductors", Phys. Rev. B 96, 035204 (2017). PRB text

    J. O. Oelerich, D. Huemmer, and S. D. Baranovskii, "How to find out the DOS in disordered organic semiconductors", Phys. Rev. Lett. 108, 226403 (2012). PRL text

    J. O. Oelerich, D. Huemmer, M. Weseloh, and S. D. Baranovskii, "Concentration dependence of the transport energy level for charge carriers in organic semiconductors", Appl.Phys. Lett. 97, 143302 (2010). APL text

    O. Rubel, S.D. Baranovskii, P. Thomas, and S. Yamasaki "Concentration dependence of the hopping mobility in disordered organic solids", Phys. Rev. B 69, 014206 (2004). PRB text

    S.D. Baranovskii, I.P. Zvyagin, H. Cordes, S. Yamasaki and P. Thomas "Percolation approach to hopping transport in organic disordered solids" phys. stat. sol. (b) 230, 281 (2002). pss(b) text

    S.D. Baranovskii, H. Cordes, F. Hensel and G. Leising "On the description of charge carrier transport in disordered organic solids" Phys. Rev. B. 62, 7934 (2000). PRB text

  • Inhalt ausklappen Inhalt einklappen Generation of charge carriers in organic disordered semiconductorsGeneration of charge carriers in organic disordered semiconductors

    Review Article: S. D. Baranovskii, M. Wiemer, A. V. Nenashev, F. Jansson, and F. Gebhard, "Calculating the efficiency of exciton dissociation at the interface between a conjugated polymer and an electron acceptor", J. Phys. Chem. Lett. (Perspectives) 3, 1214 (2012). J. Phys. Chem. Lett. text

    M. Wiemer, M. Koch, U. Lemmer, A. B. Pevtsov, S. D. Baranovskii, "Efficiency of exciton dissociation at internal organic interfaces beyond harmonic approximation", Org. Electronics 15, 2461 (2014). Org. Electr. text

    A. V. Nenashev, D. Baranovskii, M. Wiemer, F. Jansson, R. Oesterbacka, A. V. Dvurechenskii, and F. Gebhard, "Theory of exciton dissociation at the interface between a conjugated polymer and an electron acceptor", Phys. Rev. B 84, 035210 (2011). PRB text

    M. Wiemer , A. V. Nenashev , F. Jansson, S. D. Baranovskii, "On the efficiency of exciton dissociation at the interface between a conjugated polymer and an electron acceptor", Appl. Phys. Lett. 99, 013302 (2011). APL text

    O. Rubel, S. D. Baranovskii, W. Stolz, and F. Gebhard, "Exact solution for hopping dissociation of germinate electron-hole pairs in a disordered chain", Phys. Rev. Lett. 100, 196602 (2008). PRL text

  • Inhalt ausklappen Inhalt einklappen Recombination of charge carriers in organic disordered semiconductorsRecombination of charge carriers in organic disordered semiconductors

    A. V. Nenashev, M. Wiemer, A. V. Dvurechenskii, L.V. Kulik, A.B. Pevtsov, F. Gebhard, M. Koch, and S. D. Baranovskii, "Analytical theory for charge carrier recombination in blend organic solar cells", Phys. Rev. B 95, 104207 (2017). PRB text

    A. V. Nenashev, M. Wiemer, A. V. Dvurechenskii, F. Gebhard, M. Koch, and S. D. Baranovskii, "Why the apparent order of bimolecular recombination in blend organic solar cells can be larger than two: a topological consideration", Appl. Phys. Lett. 109, 033301 (2016). APL text

    A. Hofacker, J. O. Oelerich, A. V. Nenashev, F. Gebhard and S. D. Baranovskii, "Theory to carrier recombination in organic disordered semiconductors", J. Appl. Phys. 115, 223713 (2014). JAP text

    A. V. Nenashev, F. Jansson, S. D. Baranovskii, R. Österbacka, A. V. Dvurechenskii, and F. Gebhard, "Role of diffusion in two-dimensional bimolecular recombination", Appl.Phys. Lett. 96, 213304 (2010). APL text

  • Inhalt ausklappen Inhalt einklappen Transport of ions in dielectric glassesTransport of ions in dielectric glasses

    S.D. Baranovskii and H. Cordes "On the Transport Mechanism in Ionic Glasses" J. Chem. Phys. 111, 7546 (1999). J. Chem. Phys. text

    Edited Book: "Charge Transport in Disordered Solids with Applications in Electronics", edited by Sergei Baranovski (John Wiley and Sons, Ltd., Chichester, England, 2006).

  • Inhalt ausklappen Inhalt einklappen Optical and charge transport processes in amorphous inorganic semiconductorsOptical and charge transport processes in amorphous inorganic semiconductors

    Edited Book: "Charge Transport in Disordered Solids with Applications in Electronics", edited by Sergei Baranovski (John Wiley and Sons, Ltd., Chichester, England, 2006).

    Book Chapter: S.D. Baranovskii and O. Rubel, “Description of Charge Transport in Disordered Materials” in "Springer Handbook of Electronic and Photonic Materials", edited by S. Kasap and P. Capper (Springer, 2006), Chap. 9, pp. 161-186.

    Book Chapter: S.D. Baranovskii and O. Rubel, “Description of charge transport in amorphous semiconductors” in "Charge Transport in Disordered Solids with Applications in Electronics", edited by S.D. Baranovskii (John Wiley and Sons, Ltd., Chichester, England, 2006), Chap. 2, pp. 49-96.

    Book Chapter: B.I. Shklovskii, E.I. Levin, H. Fritzsche, S.D. Baranovskii "Hopping Photoconductivity in Amorphous Semiconductors: Dependence on Temperature, Electric Field and Frequency" "Advances in Disordered Semiconductors, Vol.3 (Transport, Correlation and Structural Defects)" ed. H. Fritzsche (World Scientific, Singapore, 1991), pp.161-191.

    A. V. Nenashev, V. V. Valkovskii, J. O. Oelerich, A. V. Dvurechenskii, O. Semeniuk, A. Reznik, F. Gebhard, and S. D. Baranovskii, "Release of carriers from traps enhanced by hopping", Phys. Rev. B 98, 155207 (2018). PRB text

    A. V. Nenashev, J. O. Oelerich, K. Jandieri, V.V. Valkovskii, O. Semeniuk, A. V. Dvurechenskii, F. Gebhard, G. Juska, A. Reznik, and S. D. Baranovskii, "Field-enhanced mobility in the multiple-trapping regime", Phys. Rev. B 98, 035201 (2018). PRB text

    O. Semeniuk, G. Juska, J.-O. Oelerich, M. Wiemer, S.D. Baranovskii, A. Reznik "Charge transport mechanism in lead oxide revealed by CELIV technique", Scientific Reports 6, 33359 (2016). Sci. Rep. text

    A. V. Nenashev, M. Wiemer, M. Koch, A. V. Dvurechenskii, F. Gebhard, and S. D. Baranovskii, "Disorder-induced absorption of far-infrared waves by acoustic modes in nematic liquid crystals", J. Appl. Phys. 120, 074901 (2016). JAP text

    A. V. Nenashev, F. Jansson, J. O. Oelerich, D. Huemmer, A. V. Dvurechenskii, F. Gebhard, and S. D. Baranovskii, "Advanced percolation solution for hopping conductivity", Phys. Rev. B 87, 235204 (2013). PRB text

    S.D. Baranovskii, M. Zhu, F. Hensel, P. Thomas, M.B. von der Linden, W.F. van der Weg "Thermally Stimulated Conductivity in Disordered Semiconductors at Low Temperatures" Phys. Rev. B 55, 16226 (1997). PRB text

    S.D. Baranovskii, T. Faber, F. Hensel, P. Thomas "On the Applicability of the Transport-Energy Concept to Various Disordered Materials" J. Phys.: Cond. Matter 9, 2699 (1997). J. Phys. text

    B. Cleve, B. Hartenstein, S.D. Baranovskii, M. Scheidler, P. Thomas, H. Baessler "High-Field Hopping Transport in Band Tails of Disordered Semiconductors" Phys. Rev. B 51, 16705 (1995). PRB text

    G.J. Adriaenssens, S.D. Baranovskii, W. Fuhs, J. Jansen, Ö. Öktü "Photoconductivity Response Time in Amorphous Semiconductors" Phys. Rev. B 51, 9661 (1995). PRB text

    M.E. Raikh, S.D. Baranovskii, B.I. Shklovskii "Dimensional Quantization in a-Si:H Quantum Well Structures: the Alloy Model" Phys. Rev. B 41, 7701 (1990). PRB text

    B.I. Shklovskii, H. Fritzsche, S.D. Baranovskii "Electronic Transport and Recombination in Amorphous Semiconductors at Low Temperatures" Phys. Rev. Lett. 62, 2989 (1989). PRL text

    S.D. Baranovskii, H. Fritzsche, E.I. Levin, I.M. Ruzin, B.I. Shklovskii "Theory of Photoconductivity and Photoluminescence in Amorphous Semiconductors at Low Temperatures" Sov. Phys. JETP 69, 773 (1989). JETP text

    Review Article: S.D. Baranovskii and V.G. Karpov "Localized Electron States in Semiconductor Glasses" Sov. Phys. Semicond. 21, 1 (1987).

  • Inhalt ausklappen Inhalt einklappen Mechanisms of magnegtoresistance in dilute magnetic semiconductorsMechanisms of magnegtoresistance in dilute magnetic semiconductors

    A. V. Nenashev, F. Jansson, S. Petznick, M. Wiemer, P.J. Klar, A. V. Dvurechenskii, F. Gebhard, and S. D. Baranovskii, "Scaling description of positive magnetoresistivity in doped dilute magnetic semiconductors", J. Magn. Magn. Mater. 383, 44 (2015). JMMM text

    F. Jansson, M. Wiemer, A. V. Nenashev, S. Petznick, P.J. Klar, M. Hetterich, F. Gebhard, and S. D. Baranovskii, "Large positive magnetoresistance effects in the dilute magnetic semiconductor (Zn,Mn)Se in the regime of electron hopping", J. Appl. Phys. 116, 083710 (2014). JAP text

    A. V. Nenashev, F. Jansson, M. Wiemer, S. Petznick, P. J. Klar, M. Hetterich, A. V. Dvurechenskii, F. Gebhard, and S. D. Baranovskii, "Scaling approach to hopping magnetoresistivity in dilute magnetic semiconductors", Phys. Rev. B 88, 115210 (2013). PRB text

    C. Michel, M. T. Elm, B. Goldlücke, S. D. Baranovskii, P. Thomas, W. Heimbrodt, and P. J. Klar, "Tailoring the magnetoresistance of MnAs/GaAs:Mn granular hybrid nanostructures", Appl. Phys. Lett. 92, 223119 (2008). APL text

    C. Michel, S. D. Baranovskii, P. Thomas, W. Heimbrodt, M. T. Elm, P. J. Klar, B. Goldlücke "Quantitative modeling of the annealing-induced changes of the magnetotransport in Ga1-xMnxAs alloys", J. Appl. Phys. 102, 073712 (2007). JAP text

    W. Heimbrodt, P.J. Klar, S. Ye, M. Lampalzer, C. Michel, S.D. Baranovskii, P. Thomas, W. Stolz "Magnetic Interactions in Granular Paramagnetic–Ferromagnetic GaAs: Mn/MnAs Hybrids", J. Supercond. 18 , 315 (2005). J. Supercond. text

    C. Michel, P. Klar, S.D. Baranovskii, P. Thomas "Influence of magnetic-field induced tuning of disorder and band structure on the magnetoresistance of dilute magnetic semiconductors", Phys. Rev. B 69, 165211 (2004). PRB text

  • Inhalt ausklappen Inhalt einklappen Influence of disorder on the spin-dependent effects under strong coherent excitationInfluence of disorder on the spin-dependent effects under strong coherent excitation

    Edited Book: "Charge Transport in Disordered Solids with Applications in Electronics", edited by Sergei Baranovski (John Wiley and Sons, Ltd., Chichester, England, 2006).

    C. Michel, A. Gliesche, S. D. Baranovskii, K. Lips, F. Gebhard and C. Boehme, "Influence of disorder on the spin-dependent transition rates through spin pairs under strong coherent excitation", Phys. Rev. B 79, 052201 (2009). PRB text

    A. Gliesche, C. Michel, V. Rajevac, K. Lips, S.D. Baranovskii, F. Gebhard and C. Boehme, "Spin-dependent transition rates through exchange coupled localized spin pairs during coherent spin excitation", Phys. Rev. B 77, 245206 (2008). PRB text

    V. Rajevac, Ch. Boehme, Ch. Michel, A. Gliesche, K. Lips, S.D. Baranovskii, and P. Thomas "Spin–dependent transition rates of weakly coupled localized spin pairs in semiconductors during coherent magnetic resonant excitation", Phys. Rev. B. 74, 245206 (2006). PRB text

  • Inhalt ausklappen Inhalt einklappen Influence of disorder on the optical effects in multi-component semiconductors, quantum wells and quantum dotsInfluence of disorder on the optical effects in multi-component semiconductors, quantum wells and quantum dots

    V. Valkovskii, K. Jandieri, F. Gebhard, S. D. Baranovskii, "Rethinking the theoretical description of photoluminescence in compound semiconductors", J. Appl. Phys. 123, 055703 (2018). JAP text

    V. Valkovskii, M. K. Shakfa, K. Jandieri, P. Ludewig, K. Volz, W. Stolz, M. Koch, S. D. Baranovskii, "Excitation dependence of the photoluminescence lineshape in Ga(NAsP)/GaP multiple quantum well: Experiment and Monte-Carlo simulation", J. Phys. D: Appl. Phys. 50, 025105 (2017). J. Phys. D text

    M. Wiemer, K. Jandieri, M. Koch, F. Gebhard, S. D. Baranovskii, "Band edge smearing due to compositional disorder in multi-component d-dimensional alloys", Phys. Stat. Solidi (b) - Rapid Research Letters (RRL), 10, 911 (2016). RRL text

    A. Beyer, A. Stegmüller, J.- O. Oelerich, K. Jandieri, K. Werner, G. Mette, W. Stolz, S. D. Baranovskii, R. Tonner, and K. Volz "Pyramidal Structure Formation at the Interface between III/V Semiconductors and Silicon", Chem. Mater. 28, 3265 (2016). Chem. Mater. text

    R. Woscholski, S. Gies, M. Wiemer, M. K. Shakfa, A. Rahimi-Iman, P. Ludewig, S. Reinhard, K. Jandieri, S. D. Baranovskii, W. Heimbrodt, K. Volz, W. Stolz, and M. Koch "Influence of growth temperature and disorder on spectral and temporal properties of Ga(NAsP) heterostructures", J. Appl. Phys. 119, 145707 (2016). JAP text

    M. K. Shakfa, R. Woscholski, S. Gies, T. Wegele, M. Wiemer, P. Ludewig, K. Jandieri, S.D. Baranovskii, W. Stolz, K. Volz, W. Heimbrodt, M. Koch "Carrier dynamics in Ga(NAsP)/Si multi-quantum well heterostructures with varying well thickness", Superlattices and Microstruct. 93, 67 (2016). Super. Micr. text

    R. Woscholski, M. K. Shakfa, S. Gies, M. Wiemer, A. Rahimi-Iman, M. Zimprich, S. Reinhard, K. Jandieri, S. D. Baranovskii, W. Heimbrodt, K. Volz, W. Stolz, M. Koch, "Time-resolved photoluminescence of Ga(NAsP) multiple quantum wells grown on Si substrate: effects of rapid thermal annealing", Thin Solid Films 613, 55 (2016). Th.Sol.Films text

    M K Shakfa, K Jandieri, M Wiemer, P Ludewig, K Volz, W Stolz, S D Baranovskii and M Koch, "Energy scale of compositional disorder in Ga(AsBi)", J. Phys. D: Appl. Phys. 48, 425101 (2015). J. Phys. D text

    K. Jandieri, P. Ludewig, T. Wegele, A. Beyer, B. Kunert, P. Springer, S. D. Baranovskii, S. W. Koch, K. Volz, and W. Stolz, "Compositional dependence of the band gap in Ga(NAsP) quantum well heterostructures", J. Appl. Phys. 118, 065701 (2015). JAP text

    M. K. Shakfa, M. Wiemer, P. Ludewig, K. Jandieri, K. Volz, W. Stolz, S. D. Baranovskii, and M. Koch, "Thermal quenching of photoluminescence in Ga(AsBi)", J. Appl. Phys. 117, 025709 (2015). JAP text

    K. Werner, A. Beyer, J. O. Oelerich, S. D. Baranovskii, W. Stolz, K. Voltz, "Structural Characteristics of Gallium Metal Deposited on Si (0,0,1) by MOCVD", J. Cryst. Growth 405, 102 (2014). J. Cryst. Gr. text

    K. Jandieri, B. Kunert, S. Liebich, M. Zimprich, K. Volz, W. Stolz, F. Gebhard, and S. D. Baranovskii, N. Koukourakis, N. C. Gerhardt, and M. R. Hofmann, "Nonexponential photoluminescence transients in a Ga(NAsP) lattice matched to a (001) silicon substrate", Phys. Rev. B, 87, 035303 (2013). PRB text

    C. Karcher, K. Jandieri, B. Kunert, R. Fritz, K. Volz, W. Stolz, F. Gebhard,, S.D. Baranovskii, W. Heimbrodt, "Double-scaled disorder in Ga(N,As,P)/GaP multiquantum wells", J. Lumin. 133, 125 (2013).

    K. Jandieri, M. K. Shakfa, S. Liebich, M. Zimprich, B. Kunert, C. Karcher, A. Chernikov, K. Volz, W. Stolz, M. Koch, S. Chatterjee,W. Heimbrodt, F. Gebhard, and S. D. Baranovskii, "Energy scaling of compositional disorder in Ga(N,P,As)/GaP quantum well structures", Phys. Rev. B 86, 125318 (2012). PRB text

    C. Karcher, K. Jandieri, B. Kunert, R. Fritz, M. Zimprich, K. Volz, W. Stolz, F. Gebhard, S. D. Baranovskii, and W. Heimbrodt, "Peculiarities of the photoluminescence of metastable Ga(N,As,P)/GaP quantum well structures", Phys. Rev. B 82, 245309 (2010). PRB text

    T. Niebling, O. Rubel, W. Heimbrodt, W. Stolz, S. D. Baranovskii, P. J. Klar and J. F. Geisz "Spectral and time dependences of the energy transfer of bound optical excitations in GaP(N)", J. Phys.: Condens. Matter 20, 015217 (2008). J. Phys. text

    O. Rubel, W. Stolz, and S. D. Baranovskii "Spectral dependence of the photoluminescence decay in disordered semiconductors", Appl. Phys. Lett. 91, 021903 (2007). APL text

    O. Rubel, S. D. Baranovskii, K. Hantke, B. Kunert, W.W. Rühle, P. Thomas, K. Volz and W. Stolz "Kinetic effects in recombination of optical excitations in disordered quantum heterostructures", J. Lumin. 127, 285 (2007).

    O. Rubel, B. Kunert, S. D. Baranovskii, F. Grosse, K. Volz and W. Stolz "Modelling of annealing induced short-range order effects in (GaIn)(NP) alloys", Phys. Rev. B 74, 195206 (2006). PRB text

    O. Rubel, S. D. Baranovskii, K. Hantke, B. Kuenert, W.W. Rühle, P. Thomas, K. Volz and W. Stolz "On temperature quenching of photoluminescence in disordered semiconductor heterostructures", Phys. Rev. B 73, 233201 (2006). PRB text

    K. Volz, O. Rubel, T. Torunski, S. D. Baranovskii, W. Stolz "Nanoanalytical quantification of the nitrogen content in Ga(NAs)/GaAs by using transmission electron microscopy in combination with refined structure factor", Appl. Phys. Lett. 88, 081910 (2006). APL text

    O. Rubel, M. Galluppi, S. D. Baranovskii, K. Volz, L. Geelhaar, H. Riechert, P. Thomas, and W. Stolz "Quantitative description of disorder parameters in (GaIn)(NAs) quantum wells from the temperature-dependent photoluminescence spectroscopy", J. Appl. Phys. 98, 063518 (2005). JAP text

    O. Rubel, K. Volz, T. Torunski, S.D. Baranovskii, F. Grosse, W. Stolz "Columnar [001]-oriented nitrogen order in Ga(NAs) and (GaIn)(NAs) alloys", Appl. Phys. Lett. 85, 5908 (2004). APL text

    B. Dal Don, K. Kohary, E. Tsitsishvili, S.D. Baranovskii, P. Thomas, and H. Kalt "Quantitative interpretation of the phonon-assisted redistribution processes of excitons in Zn(1-x)CdxSe quantum islands", Phys. Rev. B 69, 045318 (2004). PRB text

    S.D. Baranovskii, H. Cordes, S. Yamasaki and G. Weiser "On the Carrier Mean Free Path in GaxIn1-xAs Mixed Crystals" phys. stat. sol. (b) 218, R7 (2000). pss(b) text

    S.D. Baranovskii, R. Eichmann, P. Thomas "Temperature-dependent Exciton Luminescence in Quantum Wells: Computer Simulation" Phys. Rev. B 58, 13081 (1998). PRB text

    J.E. Golub, S.D. Baranovskii, P. Thomas "Role of Interactions in the Energy-Loss Hopping and Recombination of Two-Dimensional Electrons and Holes" Phys. Rev. B 55, 4575 (1997). PRB text

    J. Golub, S.D. Baranovskii, P. Thomas "Evidence for Dipole-Dipole Hopping of GaAs Quantum Well Excitons" Phys. Rev. Lett. 78, 4261 (1997). PRL text

    S.D. Baranovskii, U. Doerr, P. Thomas, A. Naumov, W. Gebhardt "Exciton Line Broadening by Compositional Disorder in ZnSexTe1-x Quantum Wells" Solid State Commun. 89, 5 (1994). Sol. State. Commun. text

    S.D. Baranovskii, U. Doerr, P. Thomas, A. Naumov, W. Gebhardt "Exciton Line Broadening by Compositional Disorder in Alloy Quantum Wells" Phys. Rev. B 48, 17149 (1993). PRB text

    S.D. Baranovskii and P. Thomas Comment on "Phase Transition of an Exciton System in GaAs Coupled Quantum Wells" and "Fermi-Dirac Distribution of Excitons in Coupled Quantum Wells" Phys. Rev. Lett. 69, 993 (1992). PRL text

    U. Siegner, D. Weber, E.O. Goebel, D. Benhardt, V. Heukeroth, S.D. Baranovskii, R. Saleh, P. Thomas, H. Schwab, C. Klingshirn, V.G. Lysenko, J.M. Hvam "Optical Dephasing in Semiconductor Mixed Crystals" Phys. Rev. B 46, 4564 (1992). PRB text

    S.D. Baranovskii, P. Thomas, H. Vaupel "Temperature Dependence of the Linewidth of Shallow Impurity Spectral Lines in Lightly Doped Weakly Compensated Semiconductors" J. Appl. Phys. 71, 2452 (1992). JAP text

    H. Kalt, J. Collet, S.D. Baranovskii, R. Saleh, P. Thomas, Le Si Dang, J. Cibert "Optical- and Acoustic - Phonon Assisted Hopping of Localized Excitons in CdTe/ZnTe Quantum Wells" Phys. Rev. B 45, 4253 (1992). PRB text

    S.D. Baranovskii "Theoretical Basis for Qantitative Characterization of Impurities in n-Type III-V Semiconductors by Photoelectromagnetic Spectroscopy" Appl. Surface Science 50, 218 (1990). Appl. Surf. Sci. text or via HeBIS

    A.G. Abdukadirov, S.D. Baranovskii, S.Yu. Verbin, E.L. Ivchenko, A.Yu. Naumov, A.N. Reznitsky "Photoluminescence and Tunneling Relaxation of Localized Excitons in A2B6 Anion Solid Solutions" Sov. Phys. JETP 71, 1155 (1990). JETP text

    M.E. Raikh, S.D. Baranovskii, B.I. Shklovskii "Dimensional Quantization in a-Si:H Quantum Well Structures: the Alloy Model" Phys. Rev. B 41, 7701 (1990). PRB text

    S.D. Baranovskii, B.L. Gelmont, V.G. Golubev, V.I. Ivanov-Omskii, A.V. Osutin "Temperature Dependence of the Lineshape of 1s->2p Photothermal Ionization of Donors in GaAs" Sov. Phys. JETP Lett. 46, 510 (1987). JETP Lett text

    S.D. Baranovskii and A.L. Efros "Band Edge Smearing in Solid Solutions" Sov. Phys. Semicond. 12, 1328 (1978).

  • Inhalt ausklappen Inhalt einklappen Transport mechanisms in tunnel diodes for solar cellsTransport mechanisms in tunnel diodes for solar cells

    K Jandieri, S D Baranovskii, W Stolz, F Gebhard, W Guter, M Hermle, and A W Bett, "Fluctuations of the peak current of tunnel diodes in multi-junction solar cells", J. Phys. D: Appl. Phys. 42, 155101 (2009). J. Phys. D text

    K. Jandieri, S.D. Baranovskii, O. Rubel, W. Stolz, F. Gebhard, W. Guter, M. Hermle, and A.W. Bett, "Resonant tunneling as a dominant transport mechanism in n-GaAs/p-GaAs tunnel diodes", Appl. Phys. Lett. 92, 243504 (2008). APL text

    K. Jandieri, S.D. Baranovskii, O. Rubel, W. Stolz, F. Gebhard, W. Guter, M. Hermle, and A.W. Bett "Resonant electron tunneling through defects in tunnel diodes", J. Appl. Phys. 104, 094506 (2008). JAP text

    K. Jandieri, S.D. Baranovskii, W. Stolz, and F. Gebhard "Analytical theory for favorable defects in tunnel diodes", J. Appl. Phys. 104, 114511 (2008). JAP text

  • Inhalt ausklappen Inhalt einklappen Materials and physical effects for medical imaging and memoriesMaterials and physical effects for medical imaging and memories

    Edited Book: "Charge Transport in Disordered Solids with Applications in Electronics", edited by Sergei Baranovski (John Wiley and Sons, Ltd., Chichester, England, 2006).

    O. Bubon, K. Jandieri, S. D. Baranovskii, S. O. Kasap, and A. Reznik "Columnar recombination for X-ray generated electron-holes in amorphous selenium and its significance in a-Se x-ray detectors" , J. Appl. Phys. 119, 124511 (2016). JAP text

    A. Reznik, K. Jandieri, F. Gebhard, S. D. Baranovskii , "Non-Onsager mechanism of longwave photogeneration in amorphous selenium at high electric fields", Appl.Phys. Lett. 100, 132101 (2012). APL text

    K. Jandieri, O. Rubel, S.D. Baranovskii, A.Reznik, J.A.Rowlands and S.O.Kasap, "Lucky-drift model for impact ionization in amorphous semiconductors", J. Mater Sci: Mater Electron. 20, S221 (2009). J. Mater Sci text

    A. Reznik, S.D. Baranovskii, M. Klebanov, V. Lyubin, O. Rubel, and J. A. Rowlands, "Reversible vs Irreversible Photodarkening in a-Se: the Kinetics Study", J. Mater Sci: Mater Electron. 20, S111 (2009). J. Mater Sci text

    A. Reznik, S.D. Baranovskii, O. Rubel, K. Jandieri, S.O. Kasap, Y.Ohkawa, M. Kubota, K. Tanioka and J. A. Rowlands "Avalanche multiplication in amorphous selenium and its utilization in imaging", J. Non-Cryst. Solids 354, 2691 (2008). JNCS text

    K. Jandieri, O. Rubel, S.D. Baranovskii, A. Reznik, J.A. Rowlands, S.O. Kasap "Scattering and movement asymmetry in the one-dimensional lucky-drift simulation of the avalanche processes in disordered semiconductors", J. Non-Cryst. Solids 354, 2657 (2008). JNCS text

    A. Reznik, S. D. Baranovskii, O. Rubel, G. Juska, S. O. Kasap, Y. Ohkawa, K. Tanioka, J. A. Rowlands "Avalanche multiplication phenomenon in amorphous semiconductors: Amorphous selenium versus hydrogenated amorphous silicon", J. Appl. Phys. 102, 053711 (2007). JAP text

    A. Reznik, S. D. Baranovskii, V. Lyubin et al., "Kinetics of the photostructural changes in a-Se films", J. Appl. Phys. 100, 113506 (2006). JAP text

    S.O. Kasap, J. Rowlands, S.D. Baranovskii, and K. Tanioka "Lucky drift impact ionization in amorphous semiconductors", J. Appl. Phys. 96, 2037 (2004). JAP text

    O. Rubel, S.D. Baranovskii, I.P. Zvyagin, P. Thomas, and S.O. Kasap "Lucky-drift model for avalanche multiplication in amorphous semiconductors", phys. stat. sol. (c) 1, 1186 (2004). pss(c) text

  • Inhalt ausklappen Inhalt einklappen Effects of Coulomb interactions on charge transport and light absorption in disordered semiconductorsEffects of Coulomb interactions on charge transport and light absorption in disordered semiconductors

    Edited Book: "Charge Transport in Disordered Solids with Applications in Electronics", edited by Sergei Baranovski (John Wiley and Sons, Ltd., Chichester, England, 2006).

    J. Matulewski, S. D. Baranovskii, and P. Thomas, "On the application of the Edwards-Anderson order parameter to the Coulomb glass", phys. stat. sol. (b) 245, 481 (2008). pss(b) text

    J. Matulewski1, S. D. Baranovskii, and P. Thomas "Simulation of the Coulomb gap evolution in the Coulomb glass" phys. stat. sol. (c) 5, 694 (2008). pss(c) text

    J. Matulewski, S.D. Baranovskii, P. Thomas "Phononless hopping conductivity in a Coulomb glass ", phys. stat. sol. (c) 3, 279 (2006). pss(c) text

    S.D. Baranovskii, O. Rubel, P. Thomas, "On description of Coulomb effects caused by doping in amorphous and disordered organic semiconductors ", J. Optoelectronics and Advanced Materials 7, 1929 (2005).

    P. Bozsoki, S.D. Baranovskii, P. Thomas, and S.C. Agarwal "Potential fluctuations in disordered semiconductors measured by transport and optical methods ", phys. stat. sol. (c) 1, 113 (2004). pss(c) text

    I.P. Zvyagin, M.A. Ormont, S.D. Baranovskii, P. Thomas "Effect of Coulomb Interaction on the Density of States in Intentionally Disordered Superlattices" physica status solidi (b) 230, 193 (2002). pss(b) text

    I Shlimak, M. Kaveh, R. Ussyshkin, V. Ginodman, S.D. Baranovskii, H. Vaupel, P. Thomas, R.W. van der Heijden "Temperature-Induced Smearing of the Coulomb Gap by Hopping Electrons" Phys. Rev. Lett. 75, 4764 (1995). PRL text

    S.D. Baranovskii, F. Hensel, K. Ruckes, P. Thomas, G.J. Adriaenssens "On the Potential Fluctuations in Amorphous Silicon" J. Non-Cryst. Solids 190, 117 (1995). JNCS text

    S.D. Baranovskii, P. Thomas, H. Vaupel "Electron Glass Transition in a Lightly Doped Semiconductor" Philos. Mag. B 65, 685 (1992). text via TIB

    S.D. Baranovskii and M. Silver "The Effect of Long-Range Coulomb Potential on the Electronic Structure of Localized States in Homogeneous Intrinsic Amorphous Semiconductors" Philos. Mag. Lett. 61, 77 (1990). text via TIB

    S.D. Baranovskii, B.I. Shklovskii, A.L. Efros "Screening in a System with Localized Electrons" Sov. Phys. JETP 60, 1031 (1984).JETP text

    S.D. Baranovskii, A.A. Uzakov, A.L. Efros "Thermodynamic Properties of Impurity Band Electrons" Sov. Phys. JETP 56, 422 (1982).JETP text

    S.D. Baranovskii, A.L. Efros, B.I. Shklovskii "Elementary Excitations in Disordered Systems with Localized Electrons" Sov. Phys. JETP 51, 199 (1980).JETP text

    S.D. Baranovskii and A.A. Uzakov "On the High-Frequency Impurity Hopping Conductivity" Solid State Commun. 36, 829 (1980). Sol. State. Commun. text

    S.D. Baranovskii, A.L. Efros, B.L. Gelmont, B.I. Shklovskii "Coulomb Gap in Disordered Systems: Computer Simulation" J. Phys. C: Solid State Phys. 12, 1023 (1979). J. Phys. C text

    S.D. Baranovskii, A.L. Efros, B.L. Gelmont, B.I. Shklovskii "Coulomb Gap in Disordered Systems" Solid State Commun. 27, 1 (1978). Sol. State. Commun. text

  • Inhalt ausklappen Inhalt einklappen Charge transport via DNA moleculesCharge transport via DNA molecules

    Edited Book: "Charge Transport in Disordered Solids with Applications in Electronics", edited by Sergei Baranovski (John Wiley and Sons, Ltd., Chichester, England, 2006).

    J. Matulewski, S. Orlowski, S. D. Baranovskii, and P. Thomas "The influence of the water surrounding on a long-distance electron transport in the DNA", phys. stat. sol. (c) 5, 714 (2008). pss(c) text

    J. Matulewski, S.D. Baranovskii, P. Thomas "Effects of dynamic disorder on the charge transport via DNA molecules ", Phys. Chem. Chem. Phys. 7, 1514 (2005). PCCP text

    J. Matulewski, S.D. Baranovskii, P. Thomas "Base sequence dependence of charge transport via short DNA bridges ", Phys. Stat. Solidi (b) - Rapid Research Letters (RRL) 241, R46 (2004). RRL text

    K. Kohary, H. Cordes, S.D. Baranovskii, P. Thomas, and J.-H. Wendorff "Hopping transport in 1D chains (DNA vs. DLC)", phys. stat. sol. (b) 241, 76 (2004). pss(b) text

  • Inhalt ausklappen Inhalt einklappen Photo-induced condensation of vaporsPhoto-induced condensation of vapors

    S.D. Baranovskii, R. Dettmer, F. Hensel, H. Uchtmann "On the Time Decay of the Photoinduced Condensation in Supersaturated Vapors" J. Chem. Phys. 103, 7796 (1995). J. Chem. Phys. text

    H. Uchtmann, R. Dettmer, S.D. Baranovskii, F. Hensel "Photoinduced Nucleation in Supersaturated Mercury Vapor" J. Chem. Phys. 108, 9775 (1998). J. Chem. Phys. text

    H. Uchtmann, S.Yu. Kazitsyna, S.D. Baranovskii, and F. Hensel "Light-Induced Nucleation and Optical Absorption in Cesium Vapor" J. Chem. Phys. 113, 4171 (2000). J. Chem. Phys. text

  • Inhalt ausklappen Inhalt einklappen Einstein relation between drift and diffusion under non-equilibrium conditionsEinstein relation between drift and diffusion under non-equilibrium conditions

    S.D. Baranovskii, T. Faber, F. Hensel, P. Thomas "On the Einstein Relation for Hopping Electrons" J. Non-Cryst. Solids 227-230, 158 (1998). JNCS text

    S.D. Baranovskii, T. Faber, F. Hensel, P. Thomas "On the Einstein Relation for Hopping Electrons" phys. stat. sol. (b) 205, 87 (1998). pss(b) text

    S.D. Baranovskii, T. Faber, F. Hensel, P. Thomas, G.J. Adriaenssens "Einstein Relationship for Hopping Electrons" J. Non-Cryst. Solids 198-200, 214 (1996). JNCS text