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Dilute Bismuth Containing W-Type Heterostructures for Long-Wavelength Emission on GaAs Substrates
T. Hepp, J. Veletas, R. Günkel, O. Maßmeyer, J. Glowatzki, W. Stolz, S. Chatterjee, and K. Volz
Cryst. Growth Des. (2021), doi:

Optimization of imaging conditions for composition determination by annular dark field STEM
S. Firoozabadi, P. Kükelhan, T. Hepp, A. Beyer, K. Volz
Ultramicroscopy 230 (2021), 113387

A robust technique to image all elements in LiNiO2 cathode active material by 4D-STEM
S. Ahmed, A. Pokle, J. Belz, M. Bianchini, A. Beyer, J. Janek and K. Volz
Microscopy and Microanalysis 27 (S1) (2021), pp. 1446 – 1449

Analyzing Nanometer-Thin Cathode Particle Coatings for Lithium-Ion Batteries — The Example of TiO2 on NCM622
Y. Moryson, F. Walther, J. Sann, B. Mogwitz, S. Ahmed, S. Burkhardt, L. Chen, P. J. Klar, K. Volz, S. Fearn, M. Rohnke, and J. Janek
ACS Appl. Energy Mater. 4 (7) (2021), pp. 7168 – 7181

Synthesis and Postprocessing of Single-Crystalline LiNi0.8Co0.15Al0.05O2 for Solid-State Lithium-Ion Batteries with High Capacity and Long Cycling Stability
R. Fantin, E. Trevisanello, R. Ruess, A. Pokle, G. Conforto, F. H. Richter, K. Volz, and J. Janek
Chem. Mater. 33 (7) (2021), pp. 2624 - 2634

Angle-resolved STEM using an iris aperture: Scattering contributions and sources of error for the quantitative analysis in Si
T. Grieb, F. F. Krause, K. Müller-Caspary, S. Firoozabadi, C. Mahr, M. Schowalter, A. Beyer, O. Oppermann, K. Volz, A. Rosenauer
Ultramicroscopy 221 (2021), 113175

Optimized atomic layer deposition of homogeneous, conductive Al2O3 coatings for high-nickel NCM containing ready-to-use electrodes
R. S. Negi, S. P. Culver, M. Wiche, S. Ahmed, K. Volz and M. T. Elm
Phys. Chem. Chem. Phys. 23 (11) (2021), pp. 6725 – 6737

Quantitative Characterization of Nanometer-Scale Electric Fields via Momentum-Resolved STEM
A. Beyer, M. S. Munde, S. Firoozabadi, D. Heimes, T. Grieb, A. Rosenauer, K. Müller-Caspary, and K. Volz
Nano Letters 21 (5) (2021), 2018–2025

Comparison of carrier-recombination in Ga(As,Bi)/Ga(N,As)-type-II quantum wells and W-type heterostructures
J. Veletas, T. Hepp, F. Dobener, K. Volz, and S. Chatterjee
Appl. Phys. Lett. 118 (5) (2021), 052103

Monitoring the thermally induced transition from sp3-hybridized into sp2-hybridized carbons

D. B. Schüpfer, F. Badaczewski, J. Peilstöcker, J. M. Guerra-Castro, H. Shim, S. Firoozabadi, A. Beyer, K. Volz, V. Presser, C. Heiliger, B. Smarsly, P. J. Klar
Carbon 172 (2021), pp. 214 – 227

The influence of growth interruption on the luminescence properties of Ga(As,Sb)-based type II heterostructures
L. Rost, J. Lehr, M. Maradiya, L. Hellweg, F. Fillsack, W. Stolz, W. Heimbrodt
Journal of Luminescence 231 (2021), 117817


In Situ Monitoring of Thermally Induced Effects in Nickel-Rich Layered Oxide Cathode Materials at the Atomic Level
A. Pokle, S. Ahmed, S. Schweidler, M. Bianchini, T. Brezesinski, A. Beyer, J. Janek, and K. Volz
ACS Appl. Mater. Interfaces 12 (51) (2020), pp. 57047 – 57054

Influence of plasmon excitations on atomic-resolution quantitative 4D scanning transmission electron microscopy
A. Beyer, F. F. Krause, H. L. Robert, S. Firoozabadi, T. Grieb, P. Kükelhan, D. Heimes, M. Schowalter, K. Müller-Caspary, A. Rosenauer & K. Volz
Scientific Reports 10 (2020), 17890

Femtosecond time-resolved nonlinear optical spectroscopy of charge transfer at the buried GaP/Si(001) interface
G. Mette, J. E. Zimmermann, A. Lerch, K. Brixius, J. Güdde, A. Beyer, M. Dürr, K. Volz, W. Stolz, and U. Höfer
Appl. Phys. Lett. 117 (8) (2020), 081602

In situ analysis of Bi terminated GaAs (0 0 1) and Ga(As,Bi) surfaces during growth by MOVPE
O. Maßmeyer, T. Hepp, R. Günkel, J. Glowatzki, W. Stolz, K. Volz
Applied Surface Science 533 (2020), 147401

Widely Tunable Terahertz‐Generating Semiconductor Disk Laser

K. A. Fedorova, H. Guoyu, M. Wichmann, C. Kriso, F. Zhang, W. Stolz, M. Scheller, M. Koch, A. Rahimi-Iman
Phys. Status Solidi RRL 14 (10) (2020), 2000204

Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates

A. Barzaghi, S. Firoozabadi, M. Salvalaglio, R. Bergamaschini, A. Ballabio, A. Beyer, M. Albani, J. Valente, A. Voigt, D. J. Paul, L. Miglio, F. Montalenti, K. Volz, and G. Isella
Cryst. Growth Des. 20 (5) (2020), pp. 2914 – 2920

Ga(N,P) Growth on Si and Decomposition Studies of the N–P Precursor Di-tert-butylaminophosphane (DTBAP)

J. Glowatzki, O. Maßmeyer, M. Köster, T. Hepp, E. Odofin, C. von Hänisch, W. Stolz and K. Volz
Organometallics 39 (10) (2020), pp. 1772 – 1781

Progress in Sputter Growth of β‐Ga2O3 by Applying Pulsed‐Mode Operation

P. Schurig, F. Michel, A. Beyer, K. Volz, M. Becker, A. Polity, P. J. Klar
Phys. Status Solidi A 217 (10) (2020), 1901009

Direct Probe of Room-Temperature Quantum-Tunneling Processes in Type-II Heterostructures Using Terahertz Emission Spectroscopy
M. Stein, C. Fuchs, W. Stolz, D. M. Mittleman, and M. Koch
Phys. Rev. Applied 13 (5) (2020), 054073

Visualization of Light Elements using 4D STEM: The Layered‐to‐Rock Salt Phase Transition in LiNiO2 Cathode Material
S. Ahmed, M. Bianchini, A. Pokle, M. S. Munde, P. Hartmann, T Brezesinski, A. Beyer, J. Janek, K. Volz
Adv. Energy Mater. 10 (25) (2020), 2001026

Epitaxial Growth and Structural Characterization of Ceria Deposited by Atomic Layer Deposition on High-Surface Porous Yttria-Stabilized Zirconia Thin Films

M. F. Zscherp, J. Glaser, C. Becker, A. Beyer, P. Cop, J. Schörmann, K. Volz, M. T. Elm
Cryst. Growth Des. 20 (4) (2020), pp. 2194 – 2201

Anomalous Angle-Dependent Magnetotransport Properties of Single InAs Nanowires
P. Uredat, R. Kodaira, R. Horiguchi, S. Hara, A. Beyer, K. Volz, P. J. Klar, M. T. Elm
Nano Lett. 20 (1) (2020), pp. 618 - 624

Wavelength and Pump-Power Dependent Nonlinear Refraction and Absorption in a Semiconductor Disk Laser
C. Kriso, S. Kress, T. Munshi, M. Grossmann, R. Bek, M. Jetter, P. Michler, W. Stolz, M. Koch, A. Rahimi-Iman
IEEE Photonics Technology Letters 32 (2) (2020), pp. 85 - 88