Main Content

Publications

2023

Self-catalyzed GaP nanowire MOVPE growth on Si
D. Krug, J. Glowatzki, F. Hüppe, M. Widemann, F. Gruber, A. Beyer, K. Volz
J. Cryst. Growth 609 (2023), 127138

Gain recovery dynamics in active type-II semiconductor heterostructures
F. Schäfer, M. Stein, J. Lorenz, F. Dobener, C. Ngo, J. T. Steiner, C. Fuchs, W. Stolz, K. Volz, T. Meier, J. Hader, J. V. Moloney, S. W. Koch, and S. Chatterjee
Appl. Phys. Lett. 122 (8) (2023), 082104

Formation of an Artificial Cathode–Electrolyte Interphase to Suppress Interfacial Degradation of Ni-Rich Cathode Active Material with Sulfide Electrolytes for Solid-State Batteries
T.-T. Zuo, F. Walther, S. Ahmed, R. Rueß, J. Hertle, B. Mogwitz, K. Volz, and J. Janek
ACS Energy Lett. 8 (2023), pp. 1322 – 1329

2022

Coating versus Doping: Understanding the Enhanced Performance of High-Voltage Batteries by the Coating of Spinel LiNi_0.5Mn_1.5O₄ with Li_0.35La_0.55TiO₃
V. Mereacre, P. Stüble, V. Trouillet, S. Ahmed, K. Volz, J. R. Binder
Adv. Mater. Interfaces (2022), 2201324

Probing the Ni(OH)₂ Precursor for LiNiO₂ at the Atomic Scale: Insights into the Origin of Structural Defect in a Layered Cathode Active Material
A. Pokle, D. Weber, M. Bianchini, J. Janek, K. Volz
Small (2022), 2205508

Insights into molecular cluster materials with adamantane-like core structures by considering dimer interactions
S. Schwan, A. J. Achazi, F. Ziese, P. R. Schreiner, K. Volz, S. Dehnen, S. Sanna, D. Mollenhauer
J. Comput. Chem. (2022), pp. 1 - 14

Phase relaxation control in heterostructures featuring charge-transfer excitons
M. Fey, M. Stein, C. Fuchs, W. Stolz, K. Volz, and S. Chatterjee
Phys. Rev. B 106 (2022), 165303

AlN Buffer Enhances the Layer Quality of MBE-Grown Cubic GaN on 3C-SiC
M. F. Zscherp, N. Mengel, D. M. Hofmann, V. Lider, B. Ojaghi Dogahe, C. Becker, A. Beyer, K. Volz, J. Schörmann, and S. Chatterjee
Cryst. Growth Des. 22 (11) (2022), pp. 6786 – 6791

Octave-spanning emission across the visible spectrum from single crystalline 1,3,5,7-tetrakis-(p-methoxyphenyl)adamantane
M. J. Müller, F. Ziese, J. Belz, F. Hüppe, S. Gowrisankar, B. Bernhardt, S. Schwan, D. Mollenhauer, P. R. Schreiner, K. Volz, S. Sanna, and S. Chatterjee
Opt. Mater. Express 12 (9) (2022), pp. 3517 - 3529

Terahertz radiation from propagating acoustic phonons based on deformation potential coupling
S.-H. Park, S. Lee, K. Ishioka, C. J. Stanton, C.-S. Kee, A. Beyer, U. Höfer, W. Stolz, K. Volz, and Y.-D. Jho
Opt. Express 30 (13) (2022), pp. 23544 - 23555

Deeper Understanding of the Lithiation Reaction during the Synthesis of LiNiO₂ Towards an Increased Production Throughput
P. Kurzhals, F. Riewald, M. Bianchini, S. Ahmed, A. M. Kern, F. Walther, H. Sommer, K. Volz and J. Janek
J. Electrochem. Soc. 169 (5) (2022), 050526

Quantitative composition determination by ADF-STEM at a low angular regime: a combination of EFSTEM and 4DSTEM
S. Firoozabadi, P. Kükelhan, A. Beyer, J. Lehr, D. Heimes, K. Volz
Ultramicroscopy 240 (2022), 113550

Adamantanes as White-Light Emitters: Controlling the Arrangement and Functionality by External Coulomb Forces
J. Belz, J. Haust, M. J. Müller, K. Eberheim, S. Schwan, S. Gowrisankar, F. Hüppe, A. Beyer, P. R. Schreiner, D. Mollenhauer, S. Sanna, S. Chatterjee, and K. Volz
J. Phys. Chem. C 126, (23) (2022), pp. 9843 – 9854

Advanced Analytical Characterization of Interface Degradation in Ni-Rich NCM Cathode Co-Sintered with LATP Solid Electrolyte
M. Malaki, A. Pokle, S.-K. Otto, A. Henss, J. P. Beaupain, A. Beyer, J. Müller, B. Butz, K. Wätzig, M. Kusnezoff, J. Janek, K. Volz
ACS Appl. Energy Mater. 5 (4) (2022), pp. 4651 – 4663

Tracing Low Amounts of Mg in the Doped Cathode Active Material LiNiO₂
D. Weber, J. Lin, A. Pokle, K. Volz, J. Janek, T. Brezesinski, M. Bianchini
Journal of The Electrochemical Society 169 (3) (2022), 030540

Effect of growth interruption on Ga(N, As)/Ga(As, Sb)/Ga(N, As) type-II-“W” quantum well heterostructures
J. Lehr, L. Hellweg, C. Fuchs, S. Firoozabadi, P. Kükelhan, A. Beyer, K. Volz, W. Stolz
J. Cryst. Growth 582 (2022), 126501

Selective Effects of the Host Matrix in Hydrogenated InGaAsN Alloys: Toward an Integrated Matrix/Defect Engineering Paradigm
F. Filippone, S. Younis, G. Mattioli, M. Felici, E. Blundo, A. Polimeni, G. Pettinari, D. Giubertoni, E. Sterzer, K. Volz, D. Fekete, E. Kapon, A. Amore Bonapasta
Adv. Funct. Mater. 32 (5) (2022) 2108862

Room-temperature laser operation of a Ga(In,As)/Ga(As,Bi)/Ga(In,As) W-type laser diode
T. Hepp, J. Lehr, R. Günkel, O. Maßmeyer, J. Glowatzki, A. Ruiz Perez, S. Reinhard, W. Stolz, K. Volz
Electron. Lett. 58 (2) (2022), pp. 70 – 72

A Dry-Processed Al₂O₃/LiAlO₂ Coating for Stabilizing the Cathode/Electrolyte Interface in High-Ni NCM-Based All-Solid-State Batteries
R. S. Negi, Y. Yusim, R. Pan, S. Ahmed, K. Volz, R. Takata, F. Schmidt, A. Henss, and M. T. Elm
Adv. Mater. Interfaces 9 (8) (2022), 2101428

2021

Performance characteristics of low threshold current 1.25 μm type-II GaInAs/GaAsSb 'W'-lasers for optical communications
D. A. Duffy, I. P. Marko, C. Fuchs, T. D. Eales, J. Lehr, W. Stolz and S. J. Sweeney
J. Phys. D: Appl. Phys. 54 (36) (2021), 365104

Revealing the Significance of Catalytic and Alkyl Exchange Reactions during GaAs and GaP Growth by Metal Organic Vapor Phase Epitaxy
O. Maßmeyer, J. Haust, T. Hepp, R. Günkel, J. Glowatzki, C. von Hänisch, W. Stolz, K. Volz
ACS Omega 6 (42) (2021), pp. 28229 – 28241

Stabilizing the Cathode/Electrolyte Interface Using a Dry-Processed Lithium Titanate Coating for All-Solid-State Batteries
R. S. Negi, P. Minnmann, R. Pan, S. Ahmed, M. J. Herzog, K. Volz, R. Takata, F. Schmidt, J. Janek, and M. T. Elm
Chem. Mater. 33 (17) (2021), pp. 6713 – 6723

Understanding the formation of antiphase boundaries in layered oxide cathode materials and their evolution upon electrochemical cycling
S. Ahmed, A. Pokle, M. Bianchini, S. Schweidler, A. Beyer, T. Brezesinski, J. Janek, K. Volz
Matter 4 (12) (2021), pp. 3953 – 3966

Dilute Bismuth Containing W-Type Heterostructures for Long-Wavelength Emission on GaAs Substrates
T. Hepp, J. Veletas, R. Günkel, O. Maßmeyer, J. Glowatzki, W. Stolz, S. Chatterjee, and K. Volz
Cryst. Growth Des. 21 (11) (2021), pp. 6307 – 6313

Optimization of imaging conditions for composition determination by annular dark field STEM
S. Firoozabadi, P. Kükelhan, T. Hepp, A. Beyer, K. Volz
Ultramicroscopy 230 (2021), 113387

Quantification of low-Z elements by energy-filtered scanning transmission electron microscopy
S. Firoozabadi, A. Beyer, P. Kükelhan, D. Heimes, J. Lehr, K. Volz
Microscopy and Microanalysis 27 (S1) (2021), pp. 1528 – 1529

A robust technique to image all elements in LiNiO₂ cathode active material by 4D-STEM
S. Ahmed, A. Pokle, J. Belz, M. Bianchini, A. Beyer, J. Janek and K. Volz
Microscopy and Microanalysis 27 (S1) (2021), pp. 1446 – 1449

Analyzing Nanometer-Thin Cathode Particle Coatings for Lithium-Ion Batteries — The Example of TiO₂ on NCM622
Y. Moryson, F. Walther, J. Sann, B. Mogwitz, S. Ahmed, S. Burkhardt, L. Chen, P. J. Klar, K. Volz, S. Fearn, M. Rohnke, and J. Janek
ACS Appl. Energy Mater. 4 (7) (2021), pp. 7168 – 7181

Synthesis and Postprocessing of Single-Crystalline LiNi_0.8Co_0.15Al_0.05O₂ for Solid-State Lithium-Ion Batteries with High Capacity and Long Cycling Stability
R. Fantin, E. Trevisanello, R. Ruess, A. Pokle, G. Conforto, F. H. Richter, K. Volz, and J. Janek
Chem. Mater. 33 (7) (2021), pp. 2624 - 2634

Angle-resolved STEM using an iris aperture: Scattering contributions and sources of error for the quantitative analysis in Si
T. Grieb, F. F. Krause, K. Müller-Caspary, S. Firoozabadi, C. Mahr, M. Schowalter, A. Beyer, O. Oppermann, K. Volz, A. Rosenauer
Ultramicroscopy 221 (2021), 113175

Optimized atomic layer deposition of homogeneous, conductive Al₂O₃ coatings for high-nickel NCM containing ready-to-use electrodes
R. S. Negi, S. P. Culver, M. Wiche, S. Ahmed, K. Volz and M. T. Elm
Phys. Chem. Chem. Phys. 23 (11) (2021), pp. 6725 – 6737

Quantitative Characterization of Nanometer-Scale Electric Fields via Momentum-Resolved STEM
A. Beyer, M. S. Munde, S. Firoozabadi, D. Heimes, T. Grieb, A. Rosenauer, K. Müller-Caspary, and K. Volz
Nano Letters 21 (5) (2021), 2018–2025

Comparison of carrier-recombination in Ga(As,Bi)/Ga(N,As)-type-II quantum wells and W-type heterostructures
J. Veletas, T. Hepp, F. Dobener, K. Volz, and S. Chatterjee
Appl. Phys. Lett. 118 (5) (2021), 052103

Monitoring the thermally induced transition from sp³-hybridized into sp²-hybridized carbons
D. B. Schüpfer, F. Badaczewski, J. Peilstöcker, J. M. Guerra-Castro, H. Shim, S. Firoozabadi, A. Beyer, K. Volz, V. Presser, C. Heiliger, B. Smarsly, P. J. Klar
Carbon 172 (2021), pp. 214 – 227

The influence of growth interruption on the luminescence properties of Ga(As,Sb)-based type II heterostructures
L. Rost, J. Lehr, M. Maradiya, L. Hellweg, F. Fillsack, W. Stolz, W. Heimbrodt
Journal of Luminescence 231 (2021), 117817

2020

In Situ Monitoring of Thermally Induced Effects in Nickel-Rich Layered Oxide Cathode Materials at the Atomic Level
A. Pokle, S. Ahmed, S. Schweidler, M. Bianchini, T. Brezesinski, A. Beyer, J. Janek, and K. Volz
ACS Appl. Mater. Interfaces 12 (51) (2020), pp. 57047 – 57054

Influence of plasmon excitations on atomic-resolution quantitative 4D scanning transmission electron microscopy
A. Beyer, F. F. Krause, H. L. Robert, S. Firoozabadi, T. Grieb, P. Kükelhan, D. Heimes, M. Schowalter, K. Müller-Caspary, A. Rosenauer & K. Volz
Scientific Reports 10 (2020), 17890

Femtosecond time-resolved nonlinear optical spectroscopy of charge transfer at the buried GaP/Si(001) interface
G. Mette, J. E. Zimmermann, A. Lerch, K. Brixius, J. Güdde, A. Beyer, M. Dürr, K. Volz, W. Stolz, and U. Höfer
Appl. Phys. Lett. 117 (8) (2020), 081602

In situ analysis of Bi terminated GaAs (0 0 1) and Ga(As,Bi) surfaces during growth by MOVPE
O. Maßmeyer, T. Hepp, R. Günkel, J. Glowatzki, W. Stolz, K. Volz
Applied Surface Science 533 (2020), 147401

Widely Tunable Terahertz‐Generating Semiconductor Disk Laser
K. A. Fedorova, H. Guoyu, M. Wichmann, C. Kriso, F. Zhang, W. Stolz, M. Scheller, M. Koch, A. Rahimi-Iman
Phys. Status Solidi RRL 14 (10) (2020), 2000204

Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates
A. Barzaghi, S. Firoozabadi, M. Salvalaglio, R. Bergamaschini, A. Ballabio, A. Beyer, M. Albani, J. Valente, A. Voigt, D. J. Paul, L. Miglio, F. Montalenti, K. Volz, and G. Isella
Cryst. Growth Des. 20 (5) (2020), pp. 2914 – 2920

Ga(N,P) Growth on Si and Decomposition Studies of the N–P Precursor Di-tert-butylaminophosphane (DTBAP)
J. Glowatzki, O. Maßmeyer, M. Köster, T. Hepp, E. Odofin, C. von Hänisch, W. Stolz and K. Volz
Organometallics 39 (10) (2020), pp. 1772 – 1781

Progress in Sputter Growth of β‐Ga₂O₃ by Applying Pulsed‐Mode Operation
P. Schurig, F. Michel, A. Beyer, K. Volz, M. Becker, A. Polity, P. J. Klar
Phys. Status Solidi A 217 (10) (2020), 1901009

Direct Probe of Room-Temperature Quantum-Tunneling Processes in Type-II Heterostructures Using Terahertz Emission Spectroscopy
M. Stein, C. Fuchs, W. Stolz, D. M. Mittleman, and M. Koch
Phys. Rev. Applied 13 (5) (2020), 054073

Visualization of Light Elements using 4D STEM: The Layered‐to‐Rock Salt Phase Transition in LiNiO₂ Cathode Material
S. Ahmed, M. Bianchini, A. Pokle, M. S. Munde, P. Hartmann, T Brezesinski, A. Beyer, J. Janek, K. Volz
Adv. Energy Mater. 10 (25) (2020), 2001026

Epitaxial Growth and Structural Characterization of Ceria Deposited by Atomic Layer Deposition on High-Surface Porous Yttria-Stabilized Zirconia Thin Films
M. F. Zscherp, J. Glaser, C. Becker, A. Beyer, P. Cop, J. Schörmann, K. Volz, M. T. Elm
Cryst. Growth Des. 20 (4) (2020), pp. 2194 – 2201

Anomalous Angle-Dependent Magnetotransport Properties of Single InAs Nanowires
P. Uredat, R. Kodaira, R. Horiguchi, S. Hara, A. Beyer, K. Volz, P. J. Klar, M. T. Elm
Nano Lett. 20 (1) (2020), pp. 618 - 624

Wavelength and Pump-Power Dependent Nonlinear Refraction and Absorption in a Semiconductor Disk Laser
C. Kriso, S. Kress, T. Munshi, M. Grossmann, R. Bek, M. Jetter, P. Michler, W. Stolz, M. Koch, A. Rahimi-Iman
IEEE Photonics Technology Letters 32 (2) (2020), pp. 85 - 88

2019
Effect of the interface morphology on the lateral electron transport in (001) GaP/Si heterostructures
L. Ostheim, P. J. Klar, Y. Moryson, M. Rohnke, A. Beyer, M. Volk, M. Munde, W. Stolz, and K. Volz
J. Appl. Phys. 126 (2019), 215704

Detailed Identification of the Progression of Antiphase Boundaries in GaP/Si(001)
P. Farin, M. Marquardt, W. Martyanov, J. Belz, A. Beyer, K. Volz and A. Lenz
ECS Trans. 93 (1) (2019), 93

Bismuth surface segregation and disorder analysis of quaternary (Ga,In)(As,Bi)/InP alloys
J. Veletas, T. Hepp, K. Volz, and S. Chatterjee
J. Appl. Phys. 126 (13) (2019), 135705

Metalorganic vapor phase epitaxy growth and characterization of quaternary (Ga,In)(As,Bi) on GaAs substrates
T. Hepp, O. Maßmeyer, D. A. Duffy, S. J. Sweeney, and K. Volz
J. Appl. Phys. 126 (8) (2019), 085707

In Situ Studies for Understanding Intragranular Nanopore Evolution in Ni-rich Layered Oxide Cathode Material
A. Pokle, S. Ahmed, A. Beyer, S. Schweidler, M. Bianchini, P. Hartmann, T. Brezesinski, J. Janek and K. Volz
Microscopy and Microanalysis 25 (S2) (2019), pp. 2032 - 2033

Decomposition Mechanisms of Di-tert-butylaminoarsane (DTBAA)
O. Maßmeyer, S. Inacker, T. Hepp, J. Glowatzki, L. Nattermann, E. Sterzer, C. Ritter, C. von Hänisch, W. Stolz, K. Volz
Organometallics 38 (16) (2019), 3181 - 3186

The Role of Intragranular Nanopores in Capacity Fade of Nickel-Rich Layered Li(Ni_1–x–yCo_xMn_y)O₂ Cathode Materials
S. Ahmed, A. Pokle, S. Schweidler, A. Beyer, M. Bianchini, F. Walther, A. Mazilkin, P. Hartmann, T. Brezesinski, J. Janek, K. Volz
ACS Nano 13 (9) (2019), 10694 - 10704

Monolithic integration of lattice-matched Ga(NAsP)-based laser structures on CMOS-compatible Si (001) wafers for Si-photonics applications
K. Volz, P. Ludewig, W. Stolz
Semiconductors and Semimetals 101 (2019), pp. 201 - 227

Two-chip power-scalable THz-generating semiconductor disk laser
H. Guoyu, C. Kriso, F. Zhang, M. Wichmann, W. Stolz, K. A. Fedorova, and A. Rahimi-Iman
Optics Letters 44 (16) (2019), pp. 4000 - 4003

Microcavity-enhanced Kerr nonlinearity in a vertical-external-cavity surface-emitting laser
C. Kriso, S. Kress, T. Munshi, M. Grossmann, R. Bek, M. Jetter, P. Michler, W. Stolz, M. Koch, and A. Rahimi-Iman
Optics Express 27 (9) (2019), pp. 11914 - 11929

Monolithic III/V integration on (001) Si substrate
B. Kunert, K. Volz
In: Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Material Properties and Applications, 1^st Ed., S. Irvine, P. Capper (Eds.)
John Wiley and Sons Ltd. (2019), pp. 241 - 291

Segregation at interfaces in (GaIn) As/Ga (AsSb)/(GaIn) As-quantum well heterostructures explored by atomic resolution STEM
P. Kükelhan, S. Firoozabadi, A. Beyer, L. Duschek, C. Fuchs, J. O. Oelerich, W. Stolz, K. Volz
Journal of Crystal Growth 524 (2019), 125180

Ge/SiGe parabolic quantum wells
A. Ballabio, J. Frigerio, S. Firoozabadi, D. Chrastina, A. Beyer, K. Volz, G. Isella
Journal of Physics D: Applied Physics 52 (41) (2019), 415105

Atomic Layer Deposition of Titania in Ordered Mesoporous Cerium Zirconium Oxide Thin Films: A Case Study
P. Cop, M. Göttlicher, J. Schörmann, C. Boissière, A. Beyer, C. Becker, K. Volz, H. Over, B. M. Smarsly
J. Phys. Chem. C 123 (20) (2019), pp. 12851 - 12861

MOVPE Growth and Device Applications of Ternary and Quaternary Dilute Bismide Alloys on GaAs Substrates
T. Hepp, L. Nattermann, K. Volz
In: Bismuth-Containing Alloys and Nanostructures, S. Wang, P. Lu (Eds.), Springer, Singapore
Springer Series in Materials Science 285 (2019), pp. 37 - 58

Composition determination for quaternary III–V semiconductors by aberration-corrected STEM
P. Kükelhan, T. Hepp, S. Firoozabadi, A. Beyer, K. Volz
Ultramicroscopy 206 (2019), 112814

Ab-initio calculation of band alignments for opto-electronic simulations
J. O. Oelerich, M. J. Weseloh, K. Volz, and S. W. Koch
AIP Advances 9 (2019), 055328

Advanced Electron Microscopy for III/V on Silicon Integration
A. Beyer, K. Volz
Adv. Mater. Interfaces 6 (12) (2019), 1801951

Simultaneous determination of local thickness and composition for ternary III-V semiconductors by aberration-corrected STEM
P. Kükelhan, A. Beyer, S. Firoozabadi, T. Hepp, K. Volz
Ultramicroscopy 201 (2019), pp. 49 - 57

Giant bowing of the band gap and spin-orbit splitting energy in GaP_1-xBi_x dilute bismide alloys
Z. L. Bushell, C. A. Broderick, L. Nattermann, R. Joseph, J. L. Keddie, J. M. Rorison, K. Volz, S. J. Sweeney
Scientific Reports 9 (2019), 6835

Composition determination of semiconductor alloys towards atomic accuracy by HAADF-STEM
L. Duschek, P. Kükelhan, A. Beyer, S. Firoozabadi, J. O. Oelerich, C. Fuchs, W. Stolz, A. Ballabio, G. Isella, K. Volz
Ultramicroscopy 200 (2019), pp. 84 - 96

Linewidth broadening and tunneling of excitons bound to N pairs in dilute GaAs:N
B. Fluegel, D. A. Beaton, K. Alberi, K. Volz, W. Stolz
J. Appl. Phys. 125 (14) (2019), 145704

Three-dimensional structure of antiphase domains in GaP on Si(001)
P. Farin, M. Marquardt, W. Martyanov, J. Belz, A. Beyer, K. Volz, A. Lenz
Journal of Physics: Condensed Matter 31 (14) (2019), 144001

Single-and dual-variant atomic ordering in GaAsP compositionally graded buffers on GaP and Si substrates
R. M. France, M. Feifel, J. Belz, A. Beyer, K. Volz, J. Ohlmann, D. Lackner, F. Dimroth
Journal of Crystal Growth 506 (2019), pp. 61 - 70

Coherent optical and acoustic phonons generated at lattice-matched GaP/Si(0 0 1) heterointerfaces
K. Ishioka, A. Beyer, W. Stolz, K. Volz, H. Petek, U. Höfer and C. J. Stanton
J. Phys.: Condensed Matter 31 (9) (2019), 094003
2018

Modeling and experimental realization of modelocked VECSEL producing high power sub-100 fs pulses
A. Laurain, I. Kilen, J. Hader, A. Ruiz Perez, P. Ludewig, W. Stolz, S. Addamane, G. Balakrishnan, S. W. Koch, and J. V. Moloney
Appl. Phys. Lett. 113 (12) (2018), 121113

Correlation of optical properties and interface morphology in type-II semiconductor heterostructures
L. Rost, S. Gies, M. Stein, C. Fuchs, S. Nau, P. Kükelhan, K. Volz, W. Stolz, M. Koch, W. Heimbrodt
J. Phys.: Condens. Matter 31 (1) (2018), 014001

Investigation of fluorine and nitrogen as anionic dopants in nickel-rich cathode materials for lithium-ion batteries
J. O. Binder, S. P. Culver, R. Pinedo, D. A. Weber, M. S. Friedrich, K. I. Gries, K. Volz, W. G. Zeier, J. Janek
ACS Appl. Mater. Interfaces 10 (51) (2018), pp. 44452 - 44462

Atomic-scale 3D reconstruction of antiphase boundaries in GaP on (001) silicon by STEM
J. Belz, A. Beyer, K. Volz
Micron 114 (2018), pp. 32 - 41

Influence of the atom source operating parameters on the structural and optical properties of In_xGa_1-xN nanowires grown by plasma-assisted molecular beam epitaxy
P. Hille, F. Walther, P. Klement, J. Müßener, J. Schörmann, J. Kaupe, S. Mitić, N. W. Rosemann, S. Chatterjee, A. Beyer, K. I. Gries, K. Volz, and M. Eickhoff
J. Appl. Phys. 124 (16) (2018), 165703

Direct Growth of III–V/Silicon Triple-Junction Solar Cells With 19.7% Efficiency
M. Feifel, J. Ohlmann, J. Benick, M. Hermle, J. Belz, A. Beyer, K. Volz, T. Hannappel, A. W. Bett, D. Lackner, F. Dimroth
IEEE Journal of Photovoltaics 8 (6) (2018), pp. 1590 - 1595

Second-harmonic generation as a probe for structural and electronic properties of buried GaP/Si(001) interfaces
K. Brixius, A. Beyer, G. Mette, J. Güdde, M. Dürr, W. Stolz, K. Volz, and U. Höfer
J. Phys.: Condensed Matter 30 (48) (2018), 484001

Influence of UDMHy on GaAs (0 0 1) surface reconstruction before and during growth of Ga(NAs) by MOVPE
O. Maßmeyer, E. Sterzer, L. Nattermann, W. Stolz, K. Volz
Applied Surface Science 458 (2018), pp. 512 - 516

Enhanced Absorption by Linewidth Narrowing in Optically Excited Type-II Semiconductor Heterostructures
M. Stein, C. Lammers, M. J. Drexler, C. Fuchs, W. Stolz, and M. Koch
Phys. Rev. Lett. 121 (1) (2018), 017401

Thermally Introduced Bismuth Clustering in Ga(P,Bi) Layers under Group V Stabilised Condi-tions Investigated by Atomic Resolution In Situ (S)TEM
R. Straubinger, M. Widemann, J. Belz, L. Nattermann, A. Beyer and K. Volz
Scientific Reports 8 (1) (2018), 9048

1 eV Ga(NAsSb) grown by MOVPE using di-tertiary-butyl-arsano-amine (DTBAA)
E. Sterzer, O. Maßmeyer, L. Nattermann, K. Jandieri, S. Gupta, A. Beyer, B. Ringler, C. von Hänisch, W. Stolz, and K. Volz
AIP Advances 8 (5) (2018), 055329

Structural and Electronic Properties of Isovalent Boron Atoms in GaAs
C. M. Krammel, L. Nattermann, E. Sterzer, K. Volz, P. M. Koenraad
J. Appl. Phys. 123 (16) (2018), 161589

Optical functions and critical points of dilute bismide alloys studied by spectroscopic ellipsometry
Z. L. Bushell, R. M. Joseph, L. Nattermann, P. Ludewig, K. Volz, J. L. Keddie, S. J. Sweeney
J. Appl. Phys. 123 (4) (2018), 045701

Dynamics of charge-transfer excitons in type-II semiconductor heterostructures
M. Stein, C. Lammers, P.-H. Richter, C. Fuchs, W. Stolz, M. Koch, O. Vänskä, M. J. Weseloh, M. Kira, and S. W. Koch
Phys. Rev. B 97 (12) (2018), 125306

Ab initio calculations of the concentration dependent band gap reduction in dilute nitrides
P. Rosenow, L. C. Bannow, E. W. Fischer, W. Stolz, K. Volz, S. W. Koch, and R. Tonner
Phys. Rev. B 97 (7) (2018), 075201

Tailoring the diameter of electrospun layered perovskite nanofibers for photocatalytic water splitting
A. Bloesser, P. Voepel, M. O. Loeh, A. Beyer, K. Volz and R. Marschall
J. Mater. Chem. A 6 (2018), pp. 1971 - 1978

High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well lasers emitting at 1.3 µm
C. Fuchs, A. Brüggemann, M. J. Weseloh, C. Berger, C. Möller, S. Reinhard, J. Hader, J. V. Moloney, A. Bäumner, S. W. Koch & W. Stolz
Scientific Reports 8 (2018), 1422
Author Correction: High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well lasers emitting at 1.3 µm
C. Fuchs, A. Brüggemann, M. J. Weseloh, C. Berger, C. Möller, S. Reinhard, J. Hader, J. V. Moloney, A. Bäumner, S. W. Koch & W. Stolz
Scientific Reports 8 (2018), 7891

An experimental approach for real time mass spectrometric CVD gas phase investigations
L. Nattermann, O. Maßmeyer, E. Sterzer, V. Derpmann, H. Y. Chung, W. Stolz and K. Volz
Scientific Reports 8 (2018), 319

Composition determination of multinary III/V semiconductors via STEM HAADF multislice simulations
L. Duschek, A. Beyer, J. O. Oelerich, K. Volz
Ultramicroscopy 185 (2018), pp. 15 - 20

Structure and composition of (GaMn)As formed by MOVPE
K. Volz, M. Lampalzer, A. Schaper, J. Zweck, W. Stolz
in: Microscopy of Semiconducting Materials 2001, Ed. A. G. Cullis
CRC Press (2018), pp. 211 - 214
2017

On The Effects of Column Occupancy and Static Atomic Disorder on the Analysis of Chemical Ordering in Ga(P_(1-x)Bi_x) Compounds
J. Belz, A. Beyer, L. Nattermann, K. Volz
Microscopy and Microanalysis 23 (S1) (2017), pp. 1474 - 1475

Anisotropic relaxation behavior of InGaAs/GaAs selectively grown in narrow trenches on (001) Si substrates
W. Guo, Y. Mols, J. Belz, A. Beyer, K. Volz, A. Schulze, R. Langer, B. Kunert,
J. Appl. Phys. 122 (2) (2017), 025303

(GaIn)(NAs) growth using di-tertiary-butyl-arsano-amine (DTBAA)
E. Sterzer, B. Ringler, L. Nattermann, A. Beyer, C. von Hänisch, W. Stolz, K. Volz,
J. Cryst. Growth 467 (2017), pp. 132 - 136

Impact of detuning on the performance of semiconductor disk lasers
F. Zhang, C. Möller, M. Koch, S. W. Koch, A. Rahimi-Iman, W. Stolz
Appl. Phys. B 123 (12) (2017), 291

Determination of refractive index and direct bandgap of lattice matched BGaP and (BGa)(AsP) materials on exact oriented silicon
M. Volk, and W. Stolz
J. Appl. Phys. 122 (23) (2017), 235702

Surface relaxation of strained Ga(P,As)/GaP heterostructures investigated by HAADF STEM
A. Beyer, L. Duschek, J. Belz, J. O. Oelerich, K. Jandieri and K. Volz
Journal of Microscopy 268 (3) (2017), pp. 239 - 247 (Special Issue: Microscopy of Semi-Conducting Materials)

Formation and Structural Diversity of Organo-Functionalized Tin–Silver Selenide Clusters
N. Rinn, L. Guggolz, K. Gries, K. Volz, J. Senker und S. Dehnen
Chemistry - A European Journal 23 (62) (2017), pp. 15607 - 15611

Three dimensional reconstruction of InGaN nanodisks in GaN nanowires: Improvement of the nanowire sample preparation to avoid missing wedge effects
K. I. Gries, J. Schlechtweg, P. Hille, J. Schörmann, M. Eickhoff, K. Volz
Journal of Crystal Growth 475 (2017), pp. 202 - 207

In Situ Thermal Annealing Transmission Electron Microscopy (TEM) Investigation of III/V Semiconductor Heterostructures Using a Setup for Safe Usage of Toxic and Pyrophoric Gases
R. Straubinger, A. Beyer, T. Ochs, W. Stolz, K. Volz
Microscopy and Microanalysis 23 (4) (2017), pp. 751 - 757

Orientation relationships of Mn_0.75Ga_0.25As crystallites on and within GaAs determined by scanning nano beam electron diffraction
I. Häusler, P. Moeck, K. Volz and W. Neumann
Crystal Research and Technology 52 (1) (2017), 1600261

Atomic structure of ‘W’-type quantum well heterostructures investigated by aberration-corrected STEM
P. Kükelhan, A. Beyer, C. Fuchs, M. J. Weseloh, S. W. Koch, W. Stolz and K. Volz
Journal of Microscopy 268 (3) (2017), pp. 259 - 268

Towards the Liquid Phase Exfoliation of Bismuth Iodide
N. Heidary, A. Beyer, K. Volz and J. Heine
Dalton Trans 46 (26) (2017), 8359 - 8362

Sub-picosecond acoustic pulses at buried GaP/Si interfaces
K. Ishioka, A. Rustagi, A. Beyer, W. Stolz, K. Volz, U. Höfer, H. Petek, and C. J. Stanton
Appl. Phys. Lett. 111 (6) (2017), 062105

MOVPE growth of (GaIn)As/Ga(AsSb)/(GaIn)As type-II heterostructures on GaAs-substrate for near-infrared laser applications
C. Fuchs, A. Beyer, K. Volz, W. Stolz
J. Cryst. Growth 464 (2017), pp. 201 - 205

Excitation dependence of the photoluminescence lineshape in Ga(NAsP)/GaP multiple quantum well: experiment and Monte-Carlo-simulation
V. V. Valkovskii, M. K. Shakfa, K. Jandieri, P. Ludewig, K. Volz, W. Stolz, M. Koch, S. D. Baranovskii
J. Phys. D: Appl. Phys. 50 (2017), 025105

Fundamental transverse mode operation of a type-II vertical-external-cavity-surface-emitting laser at 1.2 µm
C. Möller, F. Zhang, C. Fuchs, C. Berger, A. Rehn, A. Ruiz Perez, A. Rahimi-Iman, J. Hader, M. Koch, J. V. Moloney, S. W. Koch, W. Stolz
Electron. Lett. 53 (2) (2017), pp. 93 - 94

Pulses interactions in a colliding pulse modelocked vertical external cavity surface emitting laser
A. Laurain, R. Rockmore, H. T. Chan, J. Hader, S. W. Koch, A. Ruiz-Perez, W. Stolz, J. V. Moloney
J. Opt. Soc. Amer. B 34 (2) (2017), pp. 329 - 337

Multi-angle VECSEL cavities for dispersion control and peak-power scaling
C. W. Baker, M. Scheller, A. Laurain, A. Ruiz-Perez, W. Stolz, S. Addamane, G. Balakrishnan, S. W. Koch, R. J. Jones, J. V. Moloney
IEEE Photon. Technol. Lett. 29 (3) (2017), pp. 326 - 629

GaAs_1−xBi_x/GaN_yAs_1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics
C. A. Broderick, S. Jin, I. P. Marko, K. Hild, P. Ludewig, Z. L. Bushell, W. Stolz, J. M. Rorison, E. P. O’Reilly, K. Volz, and S. J. Sweeney
Sci Rep. 7 (2017), 46371

Microstructural study of codeposited pentacene:perfluoropentacene grown on KCl by TEM techniques
R. Félix, T. Breuer, G. Witte, K. Volz, K. I. Gries
J. Cryst. Growth 471 (2017), pp. 29 – 36

Exploiting strain to enhance the Bi incorporation in GaAs-based III/V semiconductors using MOVPE
L. Nattermann, P. Ludewig, E. Sterzer, K. Volz
J. Cryst. Growth 470 (2017), pp. 15 – 19

Growth of high N containing GaNAs/GaP/BGaAsP multi quantum well structures on Si (0 0 1) substrates
P. Ludewig, M. Diederich, K. Jandieri, W. Stolz
J. Cryst. Growth 467 (2017), pp. 61 – 64

GaP-interlayer formation on epitaxial GaAs(100) surfaces in MOVPE ambient
H. Döscher, P. Hens, A. Beyer, L. Tapfer, K. Volz, W. Stolz
J. Cryst. Growth 464 (2017), pp. 2 – 7

MOVPE growth of Ga(PBi) on GaP and GaP on Si with Bi fractions up to 8%
L. Nattermann, A. Beyer, P. Ludewig, T. Hepp, E. Sterzer, K. Volz
J. Cryst. Growth 463 (2017), pp. 151 – 155

Influence of surface relaxation of strained layers on atomic resolution ADF imaging
A. Beyer, L. Duschek, J. Belz, J. O. Oelerich, K. Jandieri, K. Volz
Ultramicroscopy 181 (2017), pp. 8 – 16

STEMsalabim: A high-performance computing cluster friendly code for scanning transmission electron microscopy image simulations of thin specimens
J. O. Oelerich, L. Duschek, J. Belz, A. Beyer, S. D. Baranovskii, K. Volz
Ultramicroscopy 177 (2017), pp. 91 - 96

Local Bi ordering in MOVPE grown Ga(As,Bi) investigated by high resolution scanning transmission electron microscopy
A. Beyer, N. Knaub, P. Rosenow, K. Jandieri, P. Ludewig, L. Bannow, S. W. Koch, R. Tonner, K. Volz
Applied Materials Today 6 (2017), pp. 22 – 28

MOVPE Grown Gallium Phosphide–Silicon Heterojunction Solar Cells
M. Feifel, J. Ohlmann, J. Benick, T. Rachow, S. Janz, M. Hermle, F. Dimroth, J. Belz, A. Beyer, K. Volz, and D. Lackner
IEEE Journal of Photovoltaics 7 (2) (2017), pp. 502 - 507

Photoconductive LT-GaAs Terahertz Antennas: Correlation Between Surface Quality and Emission Strength
O. M. Abdulmunem, K. I. Hassoon, J. Völkner, M. Mikulics, K. I. Gries, J. C. Balzer
J Infrared Milli Terahz Waves 38 (5) (2017), pp. 574 – 582

Quantitative atomic resolution at interfaces: Subtraction of the background in STEM images with the example of (Ga,In)P/GaAs structure
H. Han, A. Beyer, J. Belz, A. König, W. Stolz, and K. Volz
J. Appl. Phys. 121 (2) (2017), 025301

Recombination dynamics of type-II excitons in (Ga,In)As/GaAs/Ga(As,Sb) heterostructures
S. Gies, B. Holz, C. Fuchs, W. Stolz, and W. Heimbrodt
Nanotechnology 28 (2) (2017), 025701

Codeposited pentacene: perfluoropentacene grown on SiO₂: a microstructural study by transmission electron microscopy
R. Félix, K. Volz, and K. I. Gries
J. Cryst. Growth 458 (2017), 87 - 95
2016

Mode-locked semiconductor disk lasers
M. A. Gaafar, A. Rahimi-Iman, K. A. Fedorova, W. Stolz, E. U. Rafailov, and M. Koch
Advances in Optics and Photonics 8 (3) (2016), pp. 370 - 400

Gain spectroscopy of a type-II VECSEL chip
C. Lammers, M. Stein, C. Berger, C. Möller, C. Fuchs, A. Ruiz Perez, A. Rahimi–Iman, J. Hader, J. V. Moloney, W. Stolz, S. W. Koch, and M. Koch
Appl. Phys. Lett. 109 (23) (2016), 232107

Orientation relationships of Mn_0.75Ga_0.25As crystallites on and within GaAs determined by scanning nano beam electron diffraction
I. Häusler, P. Moeck, K. Volz and W. Neumann
Crystal Research and Technology, Anniversary Issue: 50 Years of Crystal Research & Technology 52 (1) (2016)

Band edge smearing due to compositional disorder in multi-component d-dimensional alloys
M. Wiemer, K. Jandieri, M. Koch, F. Gebhard and S. D. Baranovskii
Physica Status Solidi RRL 10 (12) (2016), pp. 911 - 914

Type-II vertical-external-cavity surface-emitting laser with Watt level output powers at 1.2 µm
C. Möller, C. Fuchs, C. Berger, A. Ruiz Perez, M. Koch, J. Hader, J. V. Moloney, S. W. Koch, W. Stolz
Appl. Phys. Lett. 108 (7) (2016), 071102

Dual-Wavelength Emission From a Serially Connected Two-Chip VECSEL
F. Zhang, M. Gaafar, C. Möller, W. Stolz, M. Koch, A. Rahimi-Iman
IEEE Photonics Technology Letters 28 (8) (2016), pp. 927 - 929

Design and Fabrication of Hybrid Metal Semiconductor Mirror for High-Power VECSEL
K. Gbele, A. Laurain, J. Hader, W. Stolz, J. V. Moloney
IEEE Photonics Technology Letters 28 (7) (2016), pp. 732 - 735

Preparation and Loading Process of Single Crystalline Samples into a Gas Environmental Cell Holder for In Situ Atomic Resolution Scanning Transmission Electron Microscopic Observation
R. Straubinger, A. Beyer, K. Volz
Microscopy and Microanalysis 22 (3) (2016), pp. 515 - 519

MOVPE growth and characterization of quaternary Ga(PAsBi)/GaAs alloys for optoelectronic applications
L. Nattermann, P. Ludewig, N. Knaub, N. W. Rosemann, T. Hepp, E. Sterzer, S. R. Jin, K. Hild, S. Chatterjee, S. J. Sweeney, W. Stolz, K. Volz
Applied Materials Today 5 (2016), pp. 209 – 214

Thermomigration and Soret effect in Na_xCoO₂ as thermoelectric material: Preparation and characterization of sodium cobaltate thin films
C. Schneider, P. Schichtel, B. Mogwitz, R. Straubinger, A. Beyer, M. Rohnke, K. Volz and J. Janek
Phys. Status Solidi A 213 (5) (2016), pp. 1284 - 1295 (Back cover p. 1368)

Coherent phonon spectroscopy characterization of electronic bands at buried semiconductor heterointerfaces
K. Ishioka, K. Brixius, A. Beyer, A. Rustagi, C. J. Stanton, W. Stolz, K. Volz, U. Höfer and H. Petek
Appl. Phys. Lett. 108 (5) (2016), 051607

Materials characterisation by angle-resolved scanning transmission electron microscopy
K. Müller-Caspary, O. Oppermann, T. Grieb, F. F. Krause, A. Rosenauer, M. Schowalter, T. Mehrtens, A. Beyer, K. Volz, P. Potapov
Scientific Reports 6 (2016), 37146

Optical gain in GaAsBi/GaAs quantum well diode lasers
I. P. Marko, C. A. Broderick, S. Jin, P. Ludewig, W. Stolz, K. Volz, J. M. Rorison, E. P. O’Reilly, S. J. Sweeney
Scientific Reports 6 (2016), 28863

Microstructural Analysis of Perfluoropentacene Films on Graphene and Graphite: Interface-Mediated Alignment and Island Formation
R. Félix, T. Breuer, P. Rotter, F. Widdascheck, B. Eckhardt, G. Witte, K. Volz and K. I. Gries
Cryst. Growth & Design 16 (12) (2016), pp 6941 – 6950

Electrical injection type-II (GaIn)As/Ga AsSb)/(GaIn)As single 'W'-quantum well laser at 1.2 μm
C. Fuchs, C. Berger, C. Möller, M. Weseloh, S. Reinhard, J. Hader, J. V. Moloney, S. W. Koch, and W. Stolz
Electronic Letters 52 (22) (2016), pp. 1875 - 1877

Band Offset in (Ga,In)As/Ga(As,Sb) Heterostructures
S. Gies, M. J. Weseloh, C. Fuchs, W. Stolz, J. Hader, J. V. Moloney, S. W. Koch, W. Heimbrodt
J. Appl. Phys. 120 (20) (2016), 204303

Impedance spectroscopic study of the charge transfer resistance at the interface between a LiNi_0.5Mn_1.5O₄ high-voltage cathode film and a LiNbO₃ coating film
M. Gellert, K. I. Gries, J. Sann, E. Pfeifer, K. Volz, B. Roling
Solid State Ionics 287 (2016), pp. 8 – 12

Novel nitrogen/gallium precursor [Ga(bdma)H₂] for MOVPE
E. Sterzer, A. Beyer, L. Nattermann, W. Schorn, K. Schlechter, S. Pulz, J. Sundermeyer, W. Stolz, K. Volz
Journal of Crystal Growth 454 (2016), pp. 173 – 179

Colliding pulse mode locking of vertical-external-cavity surface-emitting laser
A. Laurain, D. Marah, R. Rockmore, J. McInerney, J. Hader, A. Ruiz Perez, W. Stolz, and J. V. Moloney
Optica 3 (7) (2016), pp. 781 - 784

Surface Chemistry of tert-Butylphosphine (TBP) on Si(001) in the Nucleation Phase of Thin-Film Growth
A. Stegmüller, K. Werner, M. Reutzel, A. Beyer, P. Rosenow, U. Höfer, W. Stolz, K. Volz, M. Dürr, and R. Tonner
Chem. Eur. J. 22 (42) (2016), pp. 14920 - 14928

Influence of spatial and temporal coherences on atomic resolution high angle annular dark field imaging
A. Beyer, J. Belz, N. Knaub, K. Jandieri, K. Volz
Ultramicroscopy 169 (2016), pp. 1 – 10

A highly efficient directional molecular white-light emitter driven by a continuous-wave laser diode
N. Rosemann, J. P. Eußner, A. Beyer, S. W. Koch, K. Volz, S. Dehnen, S. Chatterjee
Science 352 (6291) (2016), pp. 1301 - 1304

Interplay of boron localized states and electron transport in B_x Ga_1-x As_0.11 P_0.89:Te
L. Ostheim, P. J. Klar, S. Liebich, P. Ludewig, K. Volz and W. Stolz
Semicond. Sci. Technol. 31 (7) (2016), 07LT01

Local sample thickness determination via scanning transmission electron microscopy defocus series
A. Beyer, R. Straubinger, J. Belz and K. Volz
Journal of Microscopy 262 (2) (2016), pp. 171 – 177

Pyramidal Structure Formation at the Interface between III/V Semiconductors and Silicon
A. Beyer, A. Stegmüller, J. O. Oelerich, K. Jandieri, K. Werner, G. Mette, W. Stolz, S. D. Baranovskii, R. Tonner, and K. Volz
Chem. Mater. 28 (10) (2016), pp. 3265 – 3275

Influence of growth temperature and disorder on spectral and temporal properties of Ga(NAsP) heterostructures
R. Woscholski, S. Gies, M. Wiemer, M. K. Shakfa, A. Rahimi-Iman, P. Ludewig, S. Reinhard, K. Jandieri, S. D. Baranovskii, W. Heimbrodt, K. Volz, W. Stolz and M. Koch
J. Appl. Phys. 119 (14) (2016), 145707

Charge transfer luminescence in (GaIn)As/GaAs/Ga(NAs) double quantum wells
P. Springer, S. Gies, P. Hens, C. Fuchs, H. Han, J. Hader, J. V. Moloney, W. Stolz, K. Volz, S. W. Koch, and W. Heimbrodt
Journal of Luminescence 175 (2016), pp. 255 - 259

Carrier dynamics in Ga(NAsP)/Si multi-quantum well heterostructures with varying well thickness
M. K. Shakfa, R. Woscholski, S. Gies, T. Wegele, M. Wiemer, P. Ludewig, K. Jandieri, S. D. Baranovskii, W. Stolz, K. Volz, W. Heimbrodt, M. Koch
Superlattices and Microstructures 93 (2016), pp. 67 - 72

Efficient nitrogen incorporation in GaAs using novel metal organic As-N precursor di-tertiary-butyl-arsano-amine (DTBAA)
E. Sterzer, A. Beyer, L. Duschek, L. Nattermann, B. Ringler, B. Leube, A. Stegmüller, R. Tonner, C. von Hänisch, W. Stolz, K. Volz
Journal of Crystal Growth 439 (2016), pp. 19 – 27

Direct Investigation of (Sub-) Surface Preparation Artifacts in GaAs-based materials by FIB Sectioning
J. Belz, A. Beyer, T. Torunski, W. Stolz, K. Volz
Ultramicroscopy 163 (2016), pp. 19 - 30

FIB Plan View Preparation and Electron Tomography of Ga-Containing Droplets Induced by Melt-Back Etching in Si
K. I. Gries, K. Werner, A. Beyer, W. Stolz and K. Volz
Microscopy and Microanalysis 22 (2016), pp. 131 - 139

Correlation of the nanostructure with optoelectronic properties during rapid thermal annealing of Ga(NAsP) quantum wells grown on Si(001) substrates
T. Wegele, A. Beyer, S. Gies, M. Zimprich, W. Heimbrodt, W. Stolz and K. Volz
J. Appl. Phys. 119 (2) (2016), 025705

Interface morphology and composition of Ga(NAsP) quantum well structures for monolithically integrated LASERs on silicon substrates
T. Wegele, A. Beyer, P. Ludewig, P. Rosenow, L. Duschek, K. Jandieri, R. Tonner, W. Stolz and K. Volz
J. Phys. D. Appl. Phys. 49 (7) (2016), 075108

MOVPE growth studies of Ga(NAsP)/(BGa)(AsP) multi quantum well heterostructures (MQWH) for the monolithic integration of laser structures on (001) Si-substrates
P. Ludewig, S. Reinhard, K. Jandieri, T. Wegele, A. Beyer, L. Tapfer, K. Volz, W. Stolz
Journal of Crystal Growth 438 (2016), pp. 63 - 69

Quantification of Bi distribution in MOVPE-grown Ga(AsBi) via HAADF STEM
N. Knaub, A. Beyer, T. Wegele, P. Ludewig, K. Volz
Journal of Crystal Growth 433 (2016), pp. 89 – 96

Time-resolved photoluminescence of Ga(NAsP) multiple quantum wells grown on Si substrate: effects of rapid thermal annealing
R. Woscholski, M. K. Shakfa, S. Gies, M. Wiemer, A. Rahimi-Iman, M. Zimprich, S. Reinhard, K. Jandieri, S. D. Baranovskii, W. Heimbrodt, K. Volz, W. Stolz, M. Koch
Thin Solid Films 613 (2016), pp. 55 – 58
2011 - 2015

2015

The Thermal Resistance of High-Power Semiconductor Disk Lasers
B. Heinen, C. Möller, K. Jandieri, B. Kunert, M. Koch, W. Stolz
IEEE Journal of Quantum Electronics 51 (5) (2015), 2400109

Antiphase Noise Dynamics in a Dual-Wavelength Vertical-External-Cavity Surface-Emitting Laser
M. Wichmann, G. Town, J. Quante, M. Gaafar, A. Rahimi-Iman, W. Stolz, S. W. Koch, M. Koch
IEEE Photonics Technology Letters 27 (19) (2015), pp. 2039 - 2042

Atomically ordered (Mn,Ga)As crystallites on and within GaAs
I. Häusler, P. Moeck, K. Volz and W. Neumann
Cryst. Res. Technol. 50 (12) (2015), pp. 967 - 973

Novel type-II material system for laser applications in the near-infrared regime
C. Berger, C. Möller, P. Hens, C. Fuchs, W. Stolz, S. W. Koch, A. Ruiz Perez, J. Hader and J. V. Moloney
AIP Advances 5 (4) (2015), 047105

Metastable cubic zinc-blende III/V semiconductors: Growth and structural characteristics
Review
A. Beyer, W. Stolz, K. Volz
Progress in Crystal Growth and Characterization of Materials 61 (2–4) (2015), pp. 46 – 62

Analysis of optical scattering losses in vertical-external-cavity surface-emitting lasers
D. Al Nakdali, M. K. Shakfa, B. Heinen, B. Kunert, W. Stolz, S. W. Koch, J. Hader, J. V. Moloney, A. Rahimi-Iman, M. Koch
Appl. Phys. B. 120 (1) (2015), pp. 41 - 46

Two-energy-scale model for description of the thermal quenching of photoluminescence in disordered Ga(As,Bi)
M. K. Shakfa, M. Wiemer, P. Ludewig, K. Jandieri, K. Volz, W. Stolz, S. D. Baranovskii and M. Koch
phys. stat. sol. (c) 12 (8) (2015), pp. 1187 - 1190

Excitonic transitions in highly efficient (GaIn)As/Ga(AsSb) type-II quantum-well structures
S. Gies, C. Kruska, C. Berger, P. Hens, C. Fuchs, A. Ruiz Perez, N. W. Rosemann, J. Veletas, S. Chatterjee, W. Stolz, S. W. Koch, J. Hader, J. V. Moloney, and W. Heimbrodt
Appl. Phys. Lett. 107 (2015) 182104

Energy scale of compositional disorder in Ga(AsBi)
M. K. Shakfa, K. Jandieri, M. Wiemer, P. Ludewig, K. Volz, W. Stolz, S. D. Baranovskii and M. Koch
J. Phys. D. Appl. Phys. 48 (42) (2015), 425101

Determination of type-I band offsets in GaBi_xAs_1–x quantum wells using polarisation-resolved photovoltage spectroscopy and 12-band k.p calculations
C. A. Broderick, P. E. Harnedy, P. Ludewig, Z. L. Bushell, K. Volz, R. J. Manning and E. P. O'Reilly
Semicond. Sci. Technol. 30 (9) (2015), 094009

Single-photon emission at a rate of 143MHz from a deterministic quantum-dot microlens triggered by a mode-locked vertical-external-cavity surface-emitting laser
A. Schlehahn, M. Gaafar, M. Vaupel, M. Gschrey, P. Schnauber, J.-H. Schulze, S. Rodt, A. Strittmatter, W. Stolz, A. Rahimi-Iman, T. Heindel, M. Koch, and S. Reitzenstein
Appl. Phys. Lett. 107 (4) (2015), 041105

Compositional dependence of the band gap in Ga(NAsP) quantum well heterostructures
K. Jandieri, P. Ludewig, T. Wegele, A. Beyer, B. Kunert, P. Springer, S. D. Baranovskii, S. W. Koch, K. Volz and W. Stolz
J. Appl. Phys. 118 (6) (2015), 065701

Quantitative characterization of the interface roughness of (GaIn)As quantum wells by high resolution STEM
H. Han, A. Beyer, K. Jandieri, K. I. Gries, L. Duschek, W. Stolz, K. Volz
Micron 79 (2015), pp. 1 – 7

Self-assembly of ordered wurtzite/rock salt heterostructures—A new view on phase separation in Mg_xZn_1−xO
K. I. Gries, T. A. Wassner, S. Vogel, J. Bruckbauer, I. Häusler, R. Straubinger, A. Beyer, A. Chernikov, B. Laumer, M. Kracht, C. Heiliger, J. Janek, S. Chatterjee, K. Volz and M. Eickhoff
J. Appl. Phys. 118 (4) (2015), 045706

MOVPE growth mechanisms of dilute bismide III/V alloys
P. Ludewig, L. Nattermann, W. Stolz and K. Volz
Semicond. Sci. Technol. 30 (9) (2015), 094017

Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers
I. P. Marko, S. R. Jin, K. Hild, Z. Batool, Z. L. Bushell, P. Ludewig, W. Stolz, K. Volz, R. Butkutė, V. Pačebutas, A. Geizutis, A. Krotkus and S. J. Sweeney
Semicond. Sci. Technol. 30 (9) (2015), 094008

MOVPE growth of Ga(AsBi)/GaAs using different metalorganic precursors
L. Nattermann, P. Ludewig, L. Meckbach, B. Ringler, D. Keiper, C. von Hänisch, W. Stolz, K. Volz
J. Cryst. Growth 426 (2015), pp. 54 - 60

TEM of Sensitive Organic Materials: Imaging and Analysis with Reduced Beam Damage
K. Gries, B. Haas, I. Häusler, T. Breuer, G. Witte, K. Volz
Imaging & Microscopy 17 (1) (2015), pp. 46 - 48
reprinted (adapted) with permission from Cryst. Growth Des. 14 (6) (2014), pp. 3010 – 3014 (Copyright (2014) Amercian Chemical Society)

Charge Transfer across the Interface between LiNi_0.5Mn_1.5O₄ High-Voltage Cathode Films and Solid Electrolyte Films
M. Gellert, K. I. Gries, J. Zakel, S. Kranz, S. Bradler, E. Hornberger, S. Müller, C. Yada, F. Rosciano, K. Volz and B. Roling
J. Electrochem. Soc. 162 (4) (2015), A754 - A759

Interface engineering and characterization at the atomic-scale of pure and mixed ion layer gas reaction buffer layers in chalcopyrite thin-film solar cells
O. Cojocaru-Mirédin, Y. Fu, A. Kostka, R. Sáez-Araoz, A. Beyer, N. Knaub, K. Volz, C.-H. Fischer, D. Raabe
Progress in Photovoltaics: Research and Applications 23 (6) (2015), pp. 705 – 716

Thermal quenching of photoluminescence in Ga(AsBi)
M. K. Shakfa, M. Wiemer, P. Ludewig, K. Jandieri, K. Volz, W. Stolz, S. D. Baranovskii and M. Koch
J. Appl. Phys. 117 (2015), 025709

Growth of III/V's on Silicon: Nitrides, Phosphides, Arsenides and Antimonides
K. Volz, W. Stolz, A. Dadgar, A. Krost
in: Handbook of Crystal Growth (2^nd Ed.): Thin Films and Epitaxy (2015), Edited by Thomas F. Kuech, pp. 1249 – 1300, ISBN: 978-0-444-63304-0

2014

High-Power Quantum-Dot Vertical-External-Cavity Surface-Emitting Laser Exceeding 8 W
D. Al Nakdali, M. K. Shakfa, M. Gaafar, M. Butkus, K. A. Fedorova, M. Zulonas, M. Wichmann, F. Zhang, B. Heinen, A. Rahimi-Iman, W. Stolz, E. U. Rafailov, M. Koch
IEEE Photon. Technol. Lett. 26 (15) (2014), pp. 1561 - 1564

Bipolar Electric-Field Enhanced Trapping and Detrapping of Mobile Donors in BiFeO₃ Memristors
T. You, N. Du, S. Slesazeck, T. Mikolajick, G. Li, D. Bürger, I. Skorupa, H. Stöcker, B. Abendroth, A. Beyer, K. Volz, O. G. Schmidt, and H. Schmidt
ACS Appl. Mater. Interfaces 6 (22) (2014), pp. 19758 - 19765

Multi-quantum well Ga(AsBi)/GaAs laser diodes with more than 6% of bismuth
R. Butkutė, A. Geižutis, V. Pačebutas, B. Čechavičius, V. Bukauskas, R. Kundrotas, P. Ludewig, K. Volz, A. Krotkus
Electronics Letters 50 (16) (2014), pp. 1155 - 1157

Physical properties and optimization of GaBiAs/(Al)GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi
I. P. Marko, P. Ludewig, Z. L. Bushell, S. R. Jin, K. Hild, Z. Batool, S. Reinhard, L. Nattermann, W. Stolz, K. Volz and S. J. Sweeney
J. Phys. D: Appl. Phys. 47 (34) (2014), 345103

Effect of boron localized states on the conduction band transport in B_xGa₁₋ _xP
S. Petznick, L. Ostheim, P. J. Klar, S. Liebich, K. Volz and W. Stolz
Appl. Phys. Lett. 105 (2014), 222105

Disturbing the coherent dynamics of an excitonic polarization with strong terahertz fields
M. J. Drexler, R. Woscholski, S. Lippert, W. Stolz, A. Rahimi-Iman, and M. Koch
Phys. Rev. B 90 (19) (2014), 195304

Structural characteristics of gallium metal deposited on Si (0 0 1) by MOCVD
K. Werner, A. Beyer, J. O. Oelerich, S. D. Baranovskii, W. Stolz, K. Volz
Journal of Crystal Growth 405 (2014), pp. 102 - 109

Investigation of the microstructure of metallic droplets on Ga(AsBi)/GaAs
E. Sterzer, N. Knaub, P. Ludewig, R. Straubinger, A. Beyer, K. Volz
Journal of Crystal Growth 408 (2014), pp. 71 - 77

Simultaneous Quantification of Indium and Nitrogen Concentration in InGaNAs Using HAADF-STEM
T. Grieb, K. Müller, E. Cadel, A. Beyer, M. Schowalter, E. Talbot, K. Volz and A. Rosenauer
Microscopy and Microanalysis 20 (6) (2014), pp. 1740 - 1752

Migration-enhanced epitaxy of thin GaAsBi layers
R. Butkutė, V. Pačebutas, A. Krotkus, N. Knaub, and K. Volz
Lith. J. Phys. 54 (2) (2014), pp. 125 - 129

Self-mode-locking semiconductor disk laser
M. Gaafar, P. Richter, H. Keskin, C. Möller, M. Wichmann, W. Stolz, A. Rahimi-Iman, and M. Koch
Optics Express 22 (23) (2014), pp. 28390 - 28399

Harmonic self-mode-locking of optically pumped semiconductor disc laser
M. Gaafar, C. Möller, M. Wichmann, B. Heinen, B. Kunert, A. Rahimi-Iman, W. Stolz and M. Koch
Electronic Letters 50 (7) (2014), pp. 542 - 543

Mapping nanomechanical properties of freshly grown, native, interlamellar organic sheets on flat pearl nacre
M. Launspach, K. I. Gries, F. Heinemann, A. Hübner, M. Fritz, M. Radmacher
Acta Biomaterialia 10 (9) (2014), 3986 – 3996

A 23-watt single-frequency vertical-external-cavity surface-emitting laser
F. Zhang, B. Heinen, M. Wichmann, C. Möller, B. Kunert, A. Rahimi-Iman, W. Stolz, M. Koch
Optics Exress 22 (11) (2014), 12817 - 12822

Annealing effects on the composition and disorder of Ga(N,As,P) quantum wells on silicon substrates for laser application
S. Gies, M. Zimprich, T. Wegele, C. Kruska, A. Beyer, W. Stolz, K. Volz and W. Heimbrodt
Journal of Crystal Growth 402 (2014), pp. 169 - 174

Microstructural Characterization of Organic Heterostructures by (Transmission) Electron Microscopy
B. Haas, K. I. Gries, T. Breuer, I. Häusler, G. Witte, and K. Volz
Cryst. Growth Des. 14 (6) (2014), pp. 3010 – 3014

LiNi_0.5Mn_1.5O₄Thin-Film Cathodes on Gold-Coated Stainless Steel Substrates: Formation of Interlayers and Electrochemical Properties
M. Gellert, K. I. Gries, J. Zakel, A. Ott, S. Spannenberger, C. Yada, F. Rosciano, K. Volz, B. Roling
Electrochimica Acta 133 (2014), pp. 146 – 152

Luminescence properties of dilute bismide systems
B. Breddermann, A. Bäumner, S. W. Koch, P. Ludewig, W. Stolz, K. Volz, J. Hader, J. V. Moloney, C. A. Broderick, E. P. O'Reilly
Journal of Luminescence 154 (2014), pp. 95 - 98

Growth of Ga(AsBi) on GaAs by continuous flow MOVPE
P. Ludewig, Z. L. Bushell, L. Nattermann, N. Knaub, W. Stolz, K. Volz
Journal of Crystal Growth 396 (2014), pp. 95 - 99

Growth and characterisation of Ga(NAsBi) alloy by metal organic vapour phase epitaxy
Z. L. Bushell, P. Ludewig, N. Knaub, Z. Batool, K. Hild, W. Stolz, S. J. Sweeney, K. Volz
Journal of Crystal Growth 396 (2014), pp. 79 - 84

Optical noise of stabilized high-power single frequency optically pumped semiconductor laser
A. Laurain, C. Mart, J. Hader, J. V. Moloney, B. Kunert, and W. Stolz
Optics Letters 39 (6) (2014), pp. 1573 - 1576

Comparison of Direct Growth and Wafer Bonding for the Fabrication of GaInP/GaAs Dual-Junction Solar Cells on Silicon
T. Roesener, S. Essig, C. Weuffen, A. Wekkeli, E. Oliva, G. Siefer, K. Volz, T. Hannappel, D. Haussler, W. Jager, A. W. Bett
IEEE Journal of Photovoltaics 4 (2) (2014), pp. 620 - 625

15W Single Frequency Optically Pumped Semiconductor Laser With Sub-Megahertz Linewidth
A. Laurain, C. Mart, J. Hader, J. V. Moloney, B. Kunert, W. Stolz
IEEE Photonics Technology Letters 26 (2) (2014), pp. 131 - 133

2013

Evolution of multi-mode operation in vertical-external-cavity surface-emitting lasers
M. Wichmann, M. K. Shakfa, F. Zhang, B. Heinen, M. Scheller, A. Rahimi-Iman, W. Stolz, J. V. Moloney, S. W. Koch, and M. Koch
Optics Express 21 (26) (2013), pp. 31940 - 31950

In situ spectroscopy of high-power vertical-external-cavity surface-emitting lasers
A. Chernikov, M. Wichmann, J. Herrmann, B. Heinen, M. K. Shakfa, S. Chatterjee, S. W. Koch, B. Kunert, W. Stolz, T.-L. Wang, Y. Kaneda, M. Scheller, M. J. Yarborough, J. Hader, J. V. Moloney, M. Koch
physica status solidi (b) 250 (9) (2013), pp. 1781 – 1784

Chapter 7 – Bismuth-containing III–V semiconductors: Epitaxial growth and physical properties
Z. Batool, S. Chatterjee, A. Chernikov, A. Duzik, R. Fritz, C. Gogineni, K. Hild, T. J. C. Hosea, S. Imhof, S. R. Johnson, Z. Jiang, S. Jin, M. Koch, S. W. Koch, K. Kolata, R. B. Lewis, X. Lu, M. Masnadi-Shirazi, J. Mirecki Millunchick, P. M. Mooney, N. A. Riordan, O. Rubel, S. J. Sweeney, J. C. Thomas, A. Thränhardt, T. Tiedje, K. Volz
in: Molecular Beam Epitaxy (2013), pp. 139 – 158

Temperature-dependent quantum efficiency of Ga(N,As,P) quantum wells
N. W. Rosemann, B. Metzger, B. Kunert, K. Volz, W. Stolz and S. Chatterjee
Applied Physics Letters 103 (25) (2013), 252105

Atomic structure of (110) anti-phase boundaries in GaP on Si(001)
A. Beyer, B. Haas, K. I. Gries, K. Werner, M. Luysberg, W. Stolz, and K. Volz
Applied Physics Letters 103 (3) (2013), 032107

Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser
P. Ludewig, N. Knaub, N. Hossein, S. Reinhard, L. Nattermann, I. P. Marko, S. R. Jin, K. Hild, S. Chatterjee, W. Stolz, S. J. Sweeney, and K. Volz
Applied Physics Letters 102 (24) (2013), 242115

Quantitative chemical evaluation of dilute GaNAs using ADF STEM: Avoiding surface strain induced artifacts
T. Grieb, K. Mueller, R. Fritz, V. Grillo, M. Schowalter, K. Volz, A. Rosenauer
Ultramicroscopy 129 (2013), pp. 1 - 9

In(SAr)(3) As a Building Block for 3D and Helical Coordination Polymers
J. Heine, M. Holynska, M. Reuter, B. Haas, S. Chatterjee, M. Koch, K. I. Gries, K. Volz, S. Dehnen
Crystal Growth & Design 13 (3) (2013), pp. 1252 - 1259

Growth of (BGa)As, (BGa)P, (BGa)(AsP) and (BGaIn)P by MOVPE
N. Sommer, R. Buss, J. Ohlmann, T. Wegele, C. Jurecka, S. Liebich, B. Kunert, W. Stolz, K. Volz
J. Cryst. Growth 370 (2013), pp. 191 - 196

MOVPE growth of Ga(AsBi)/GaAs multi quantum well structures
P. Ludewig, N. Knaub, W. Stolz, K. Volz
J. Cryst. Growth 370 (2013), pp. 186 - 190

4.35 kW peak power femtosecond pulse mode-locked VECSEL for supercontinuum generation
K. G. Wilcox, A. C. Tropper, H. E. Beere, D. A. Ritchie, B. Kunert, B. Heinen, and W. Stolz
Optics Express 21 (2) (2013), pp. 1599 - 1605

On the measurement of the thermal impedance in vertical-external-cavity surface-emitting lasers
J. Hader, T.-L. Wang, J. V. Moloney, B. Heinen, M. Koch, S. W. Koch, B. Kunert, and W. Stolz
J. Appl. Phys. 113 (15) (2013), 153102

Double-scaled disorder in Ga(N,As,P)/GaP multiquantum wells
C. Karcher, K. Jandieri, B. Kunert, R. Fritz, K. Volz, W. Stolz, F. Gebhard, S. D. Baranovskii, W. Heimbrodt
Journal of Luminescence 133 (2013), pp. 125 - 128

Nonexponential photoluminescence transients in a Ga(NAsP) lattice matched to a (001) silicon substrate
K. Jandieri, B. Kunert, S. Liebich, M. Zimprich, K. Volz, W. Stolz, F. Gebhard, and S. D. Baranovskii
Phys. Rev. B 87 (3) (2013), 035303

STEM strain analysis at sub-nanometre scale using millisecond frames from a direct electron read-out CCD camera
K. Müller, H. Ryll, I. Ordavo, M. Schowalter, J. Zweck, H. Soltau, S. Ihle, L. Strüder, K. Volz, P. Potapov and A. Rosenauer
Journal of Physics: Conf. Ser. 471 (1) (2013), 012024

2012

Scanning transmission electron microscopy strain measurement from millisecond frames of a direct electron charge coupled device
K. Müller, H. Ryll, I. Ordavo, S. Ihle, L. Strüder, K. Volz, J. Zweck, H. Soltau, and A. Rosenauer
Appl. Phys. Lett. 101 (21) (2012), 212110

Grain Boundaries in a Lithium Aluminum Titanium Phosphate-Type Fast Lithium Ion Conducting Glass Ceramic: Microstructure and Nonlinear Ion Transport Properties
M. Gellert, K. I. Gries , Ch. Yada, F. Rosciano, K. Volz, and B. Roling
J. Phys. Chem. C 116 (43) (2012), pp. 22675 – 22678

Strain Measurement in Semiconductor Heterostructures by Scanning Transmission Electron Microscopy
K. Müller, A. Rosenauer, M. Schowalter, J. Zweck, R. Fritz and K. Volz
Microscopy and Microanalysis 18 (5) (2012), pp. 995 - 1009

Measurement of Composition and Strain by STEM
A. Rosenauer, K. Müller, T. Mehrtens, M. Schowalter, J. Zweck, R. Fritz and K. Volz
Microscopy and Microanalysis 18 (S2) (2012), pp. 1804 - 1805

Monolithic integration of high electron mobility InAs-based heterostructure on exact (001) Silicon using a GaSb/GaP accommodation layer
L. Desplanque, S. El Kazzi, C. Coinon, S. Ziegler, B. Kunert, A. Beyer, K. Volz, W. Stolz, Y. Wang, P. Ruterana, and X. Wallart
Appl. Phys. Lett. 101 (14) (2012), 142111

Quantum design strategy pushes high-power vertical-external-cavity surface-emitting lasers beyond 100 W
T.-L. Wang, B. Heinen, J. Hader, C. Dineen, M. Sparenberg, A. Weber, B. Kunert, S. W. Koch, J. V. Moloney, M. Koch, W. Stolz
Laser & Photonics Reviews 6 (5) (2012), pp. L12 – L14

Efficiency-limiting processes in Ga(NAsP)/GaP quantum well lasers
N. Hossain, S. R. Jin, S. Liebich, M. Zimprich, K. Volz, B. Kunert, W. Stolz, and S. J. Sweeney
Appl. Phys. Lett. 101 (1) (2012), 011107

Energy scaling of compositional disorder in Ga(N,P,As)/GaP quantum well structures
K. Jandieri, M. K. Shakfa, S. Liebich, M. Zimprich, B. Kunert, C. Karcher, A. Chernikov, K. Volz, W. Stolz, M. Koch, S. Chatterjee, W. Heimbrodt, F. Gebhard, and S. D. Baranovskii
Phys. Rev. B 86 (12) (2012), 125318

Ultra-long palladium nanoworms by polymer grafts
S. Bokern, K. Volz, S. Agarwal, A. Greiner
Journal of Nanoparticle Research 14 (8) (2012), 1041

Growth study of nonpolar Zn_1-xMg_xO epitaxial films on a-plane bulk ZnO by plasma-assisted molecular beam epitaxy
B. Laumer, F. Schuster, M. Stutzmann, A. Bergmaier, G. Dollinger, S. Vogel, K. I. Gries, K. Volz, and M. Eickhoff
Appl. Phys. Lett. 101 (12) (2012), 122106

Passively modelocked VECSEL emitting 682 fs pulses with 5.1W of average output power
M. Scheller, T.-L. Wang, B. Kunert, W. Stolz, S. W. Koch, J. V. Moloney
Electronics Letters 48 (10) (2012), pp. 588 - 589

106W continuous-wave output power from a vertical-external-cavity surface-emitting laser (VECSEL)
B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, W. Stolz
Electronics Letters 48 (9) (2012), pp. 516 - 517

Methods of Electron Crystallography as Tools for Materials Analysis
W. Neumann, H. Kirmse, I. Häusler, C. Grosse, P. Moeck, S. Rouvimov, M. Beekman, R. Atkins, D. C. Johnson, K. Volz
Solid State Phenomena 186 (1) (2012), pp. 1 - 6

Synthesis and Characterization of Colloidal Fluorescent Silver Nanoclusters
S. Huang, C. Pfeiffer, J. Hollmann, S. Friede, J. Jin-Ching Chen, A. Beyer, B. Haas, K. Volz, W. Heimbrodt, J. M. Montenegro Martos, W. Chang, and W. J. Parak
Langmuir 28 (24) (2012), pp. 8915 - 8919

Temperature and pump power dependent photoluminescence characterization of MBE grown GaAsBi on GaAs
N. A. Riordan, C. Gogineni, S. R. Johnson, X. Lu, T. Tiedje, D. Ding, Y.-H. Zhang, R. Fritz, K. Kolata, S. Chatterjee, K. Volz, S. W. Koch
Journal of Materials Science: Materials in Electronics 23 (10) (2012), pp. 1799 - 1804

Determination of the chemical composition of GaNAs using STEM HAADF imaging and STEM strain state analysis
T. Grieb, K. Müller, R. Fritz, M. Schowalter, N. Neugebohrn, N. Knaub, K. Volz, A. Rosenauer
Ultramicroscopy 117 (2012), pp. 15 – 23

High Peak Power Operation of a 1- μ m GaAs-Based Optically Pumped Semiconductor Laser
A. Laurain, T.-L. Wang, M. J. Yarborough, J. Hader, J. V. Moloney, S. W. Koch, B. Kunert, W. Stolz
IEEE Photonics Technology Letters 24 (5) (2012), pp. 380 - 382

On the Measurement of the Thermal Resistance of Vertical-External-Cavity Surface-Emitting Lasers (VECSELs)
B. Heinen, F. Zhang, M. Sparenberg, B. Kunert, M. Koch, and W. Stolz
IEEE Journal of Quantum Electronics 48 (7) (2012), pp. 934 - 940

High room-temperature optical gain in Ga(NAsP)/Si heterostructures
N. Koukourakis, C. Bückers, D. A. Funke, N. C. Gerhardt, S. Liebich, S. Chatterjee, C. Lange, M. Zimprich, K. Volz, W. Stolz, B. Kunert, S. W. Koch, and M. R. Hofmann
Appl. Phys. Lett. 100 (9) (2012), 092107

GaP heteroepitaxy on Si(001): Correlation of Si-surface structure, GaP growth conditions, and Si-III/V interface structure
A. Beyer, J. Ohlmann, S. Liebich, H. Heim, G. Witte, W. Stolz, K. Volz
J. Appl. Phys. 111 (8) (2012), 083534

Parameters for temperature dependence of mean-square displacements for B-, Bi- and Tl-containing binary III-V compounds
M. Schowalter, A. Rosenauer and K. Volz
Acta Crystallographica A 68 (3) (2012), pp. 319 - 323

Thermal management in high-power vertical-external-cavity surface-emitting lasers
A. Chernikov, J. Herrmann, M. Scheller, M. Koch, B. Kunert, W. Stolz, S. Chatterjee, S. W. Koch, T.-L. Wang, Y. Kaneda, M. J. Yarborough, J. Hader, and J. V. Moloney
Quantum Electronics and Laser Science Conference, San Jose, California (2012)

Compositional disorder anomalies in Ga(N,P,As)/GaP quantum well structures
K. Jandieri, S. D. Baranovskii, B. Kunert, M. Zimprich, S. Liebich, K. Volz, W. Stolz, S. Chatterjee, C. Karcher, W. Heimbrodt and F. Gebhard
Journal of Physics: Conf. Ser. 376 (1) (2012), 012021

2011

Modal gain and time-resolved photoluminescence of Ga (NAsP) heterostructures pseudomorphically grown on silicon (001) substrate
N. Koukourakis, D. A. Funke, N. C. Gerhardt, M. R. Hofmann, B. Kunert, S. Liebich, D. Trusheim, M. Zimprich, C. Bückers, S. W. Koch, K. Volz, W. Stolz
Conf. on Lasers and Electro-Optics (CLEO), Baltimore, USA (2011), pp. 1 - 2

Toward Simultaneous Assessment of In and N in InGaAsN Alloys by Quantitative STEM-ADF Imaging
V. Grillo, K. Müller, F. Glas, K. Volz and A. Rosenauer
Microscopy and Microanalysis 17 (Suppl. 2) (2011), pp. 1862 - 1863

Investigation of the GaP/Si Interface by High-Resolution Scanning Transmission Electron Microscopy
A. Beyer, J. Ohlmann, M. Luysberg and K. Volz
Microscopy and Microanalysis 17 (Suppl. 2) (2011), pp. 1390 - 1391

Carrier dynamics in (ZnMg)O alloy materials
A. Chernikov, S. Horst, M. Koch, K. Volz, S. Chatterjee, S. W. Koch, T. A. Wassner, B. Laumer, M. Eickhoff
physica status solidi (c) 8 (4) (2011), pp. 1149 – 1152

Application of transmission electron microscopy for microstructural characterization of perfluoropentacene thin films
B. Haas, A. Beyer, W. Witte, T. Breuer, G. Witte, and K. Volz
J. Appl. Phys. 110 (7) (2011), 073514

Heat Management in High-Power Vertical-External-Cavity Surface-Emitting Lasers
A. Chernikov, J. Herrmann, M. Koch, B. Kunert, W. Stolz, S. Chatterjee, S. W. Koch, T.-L. Wang, Y. Kaneda, J. M. Yarborough, J. Hader, J. V. Moloney
IEEE Journal of Selected Topics in Quantum Electronics 17 (6) (2011), pp. 1772 - 1778

VECSEL Optimization Using Microscopic Many-Body Physics
J. Hader, T.-L. Wang; J. M. Yarborough, C. A. Dineen, Y. Kaneda, J. V. Moloney, B. Kunert, W. Stolz, S. W. Koch
IEEE Journal of Selected Topics in Quantum Electronics 17 (6) (2011), pp. 1753 - 1762

Band structure properties of novel B_xGa_1−xP alloys for silicon integration
N. Hossain, T. J. C. Hosea, S. J. Sweeney, S. Liebich, M. Zimprich, K. Volz, B. Kunert, and W. Stolz
J. Appl. Phys. 110 (6) (2011), 063101

Laser operation of Ga(NAsP) lattice-matched to (001) silicon substrate
S. Liebich, M. Zimprich, A. Beyer, C. Lange, D. J. Franzbach, S. Chatterjee, N. Hossain, S. J. Sweeney, K. Volz, B. Kunert, and W. Stolz
Appl. Phys. Lett. 99 (7) (2011), 071109

Reduced threshold current dilute nitride Ga(NAsP)/GaP quantum well lasers grown by MOVPE
N. Hossain, S. J. Sweeney, S. Rogowsky, R. Ostendorf, J. Wagner, S. Liebich, M. Zimprich, K. Volz, B. Kunert, W. Stolz
Electronics Letters 47 (16) (2011), pp. 931 - 933

Atomic scale annealing effects on In_xGa_1-xN_yAs_1-y studied by TEM three-beam imaging
K. Müller, M. Schowalter, A. Rosenauer, D. Hu, D. M. Schaadt, M. Hetterich, P. Gilet, O. Rubel, R. Fritz and K. Volz
Phys. Rev. B 84 (4) (2011), 045316

GaP-nucleation on exact Si (001) substrates for III/V device integration
K. Volz, A. Beyer, W. Witte, J. Ohlmann, I. Németh, B. Kunert, W. Stolz
Journal of Crystal Growth 315 (1) (2011), pp. 37 - 47

Correlation between hetero-interface properties and photoluminescence efficiency of Ga(NAsP)/(BGa)P multi-quantum well structures on (001) Si substrate
B. Kunert, S. Liebich, A. Beyer, R. Fritz, S. Zinnkann, K. Volz, W. Stolz
Journal of Crystal Growth 315 (1) (2011), pp. 28 - 31

Indirect in situ characterization of Si (100) substrates at the initial stage of III-V heteroepitaxy
H. Döscher, O. Supplie, S. Brückner, T. Hannappel, A. Beyer, J. Ohlmann, K. Volz
Journal of Crystal Growth 315 (1) (2011), pp. 16 - 21

Hopping relaxation of photo-excited excitons in Ga(NAsP) bulk structure
K. Jandieri, C. Jurecka, J. Ohlmann, A. Beyer, B. Kunert, S. D. Baranovskii, K. Volz, W. Stolz, F. Gebhard
physica status solidi (c) 8 (1) (2011), p. 163 - 168

Influence of crystal polarity on crystal defects in GaP grown on exact Si (001)
A. Beyer, I. Németh, S. Liebich, J. Ohlmann, W. Stolz, and K. Volz
J. Appl. Phys. 109 (8) (2011), 083529

Vibrational mode and dielectric function spectra of BGaP probed by Raman scattering and spectroscopic ellipsometry
S. Rogowsky, M. Bäumler, M. Wolfer, L. Kirste, R. Ostendorf, J. Wagner, S. Liebich, W. Stolz, K. Volz, and B. Kunert
J. Appl. Phys. 109 (5) (2011), 053504

High modal gain in Ga(NAsP)/(BGa)((As)P) heterostructures grown lattice matched on (001) silicon
N. Koukourakis, D. A. Funke, N. C. Gerhardt, M. R. Hofmann, S. Liebich, C. Bückers, S. Zinnkann, M. Zimprich, A. Beyer, S. Chatterjee, S. W. Koch, B. Kunert, K. Volz and W. Stolz
Proc. SPIE 7939 (2011), 793927

Investigation of optical and concentration profile changes of InGaNAs/GaAs heterostructures induced by thermal annealing
R. Imlau, K. Müller, O. Rubel, R. Fritz, M. Schowalter, K. Volz and A. Rosenauer
Journal of Physics: Conf. Ser. 326 (1) (2011), 012038

Determination of Nitrogen Concentration in Dilute GaNAs by STEM HAADF Z-Contrast Imaging
T. Grieb, K. Müller, O. Rubel, R. Fritz, C. Gloistein, N. Neugebohrn, M. Schowalter, K. Volz and A. Rosenauer
Journal of Physics: Conf. Ser. 326 (1) (2011), 012033

TEM 3-beam study of annealing effects in InGaNAs using ab-initio structure factors for strain-relaxed supercells
K. Müller, M. Schowalter, O. Rubel, D. Z. Hu, D. M. Schaadt, M. Hetterich, P. Gilet, R. Fritz, K. Volz and A. Rosenauer
Journal of Physics: Conf. Ser. 326 (1) (2011), 012026

Strain, composition and disorder in ADF imaging of semiconductors
V. Grillo, K. Mueller, K. Volz, F. Glas, T. Grieb and A. Rosenauer
Journal of Physics: Conf. Ser. 326 (1) (2011), 012006
2006 - 2010

2010

Peculiarities of the photoluminescence of metastable Ga(N,As,P)/GaP quantum well structures
C. Karcher, K. Jandieri, B. Kunert, R. Fritz, M. Zimprich, K. Volz, W. Stolz, F. Gebhard, S. D. Baranovskii, and W. Heimbrodt
Phys. Rev. B 82 (24) (2010), 245309

Characterization of solar cells by photocurrent spectroscopy and current-voltage characteristics with high spatial resolution
M. Schwalm, C. Lange, W. W. Rühle, W. Stolz, K. Volz, and S. Chatterjee
Optics Express 18 (6) (2010), pp. 6277 - 6287

Highly polarized self-assembled chains of single layer InP/(In,Ga)P quantum dots
A. Ugur, F. Hatami, A. N. Vamivakas, L. Lombez, M. Atatüre, K. Volz, and W. T. Masselink
Appl. Phys. Lett. 97 (25) (2010), 253113

In situ antiphase domain quantification applied on heteroepitaxial GaP growth on Si (100)
H. Döscher, B. Kunert, A. Beyer, O. Supplie, K. Volz, W. Stolz, and T. Hannappel
J. Vac. Sci. Technol. B 28 (4) (2010), C5H1 - C5H6

Influence of spatial pump distribution on the performance of high power vertical-external-cavity surface-emitting lasers
A. Chernikov, J. Hermann, M. Scheller, M. Koch, B. Kunert, W. Stolz, S. Chatterjee, S. W. Koch, T. L. Wang, Y. Kaneda, J. M. Yarborough, J. Hader, and J. V. Moloney
Appl. Phys. Lett. 97 (19) (2010), 191110

Predictive Microscopic Modeling of VECSELs
J. Hader, G. Hardesty, T.-L. Wang, M. J. Yarborough, Y. Kaneda, J. V. Moloney, B. Kunert, W. Stolz, S. W. Koch
IEEE Journal of Quantum Electronics 46 (5) (2010), pp. 810 - 817

High-Power Optically Pumped Semiconductor Laser at 1040 nm
T.-L. Wang, Y. Kaneda, J. M. Yarborough, J. Hader, J. V. Moloney, A. Chernikov, S. Chatterjee, S. W. Koch, B. Kunert, W. Stolz
IEEE Photonics Technology Letters 22 (9) (2010), pp. 661 - 663

Comparison of ultrafast carrier thermalization in Ga_xIn_1-xAs and Ge quantum wells
C. Lange, N. S. Köster, S. Chatterjee, H. Sigg, D. Chrastina, G. Isella, H. von Känel, B. Kunert, and W. Stolz
Phys. Rev. B 81 (4) (2010), 045320

MOVPE Growth of III-V Solar Cells on Silicon in 300 mm Closed Coupled Showerhead Reactor
T. Roesener, H. Döscher, A. Beyer, S. Brückner, V. Klinger, A. Wekkeli, P. Kleinschmidt, C. Jurecka, J. Ohlmann, K. Volz, W. Stolz, T. Hannappel, A. W. Bett, F. Dimroth
Proc. 25^th European Conf. "Photovoltaic Solar Energy", Valencia (2010), pp. 964 - 968

Investigation of carrier dynamics in Zn_1-xMg_xO by time-resolved photoluminescence
A. Chernikov, S. Horst, M. Koch, K. Volz, S. Chatterjee, S. W. Koch, T. A. Wassner, B. Laumer and M. Eickhoff
Journal of Luminescence 130 (11) (2010), pp. 2256 - 2259

Effect of bonding and static atomic displacements on composition quantification in In_xGa_1-xN_yAs_1-y
K. Müller, M. Schowalter, A. Rosenauer, O. Rubel, K. Volz
Phys. Rev. B 81 (2010), 075315

2009

Optical properties of Ga(NAsP) lattice matched to Si
C. Karcher, H. Grüning, M. Güngerich, P. J. Klar, B. Kunert, K. Volz, W. Stolz, W. Heimbrodt
physica status solidi (c) 6 (12) (2009), pp. 2638 - 2643

Gain characteristics and lasing of GA(NAsP) multi-quantum well structures
C. Lange, S. Chatterjee, B. Kunert, K. Volz, W. Stolz, W. W. Rühle, N. C. Gerhardt, M. R. Hofmann
physica status solidi (c) 6 (2) (2009), pp. 576 - 578

Performance changes of a vertical-external-cavity surface-emitting laser by an intra-cavity anti-reflex-coating
S. Horst, S. Chatterjee, W. W. Rühle, W. Diehl, W. Stolz, E. Kühn, A. Thränhardt, S. W. Koch, P. Brick
physica status solidi (c) 6 (2) (2009), pp. 572 - 575

Ga(AsSb)/GaAs/(AlGa)As heterostructures: additional hole-confinement due to quantum islands
S. Horst, S. Chatterjee, K. Hantke, P. J. Klar, I. Németh, W. Stolz, K. Volz, C. Bückers, A. Thränhardt, S. W. Koch, W. Rühle, S. R. Johnson, J.-B. Wang, Y.-H. Zhang
physica status solidi (c) 6 (2) (2009), pp. 411 - 414

Continuous-wave single-frequency 295 nm laser source by a frequency-quadrupled optically pumped semiconductor laser
Y. Kaneda, M. Fallahi, J. Hader, J. V. Moloney, S. W. Koch, B. Kunert, and W. Stolz
Optics Letters 34 (22) (2009), pp. 3511 - 3513

Fluctuations of the peak current of tunnel diodes in multi-junction solar cells
K. Jandieri, S. D. Baranovskii, W. Stolz, F. Gebhard, W. Guter, M. Hermle and A. W. Bett
J. Phys. D: Appl. Phys. 42 (15) (2009), 155101

MOVPE growth of dilute nitride III/V semiconductors using all liquid metalorganic precursors
K. Volz, J. Koch, F. Höhnsdorf, B. Kunert, W. Stolz
Journal of Crystal Growth 311 (8) (2009), pp. 2418 - 2426

Band anti-crossing and carrier recombination in dilute nitride phosphide based lasers and light emitting diodes
J. Chamings, S. Ahmed, A. R. Adams, S. J. Sweeney, V. A. Odnoblyudov, C. W. Tu, B. Kunert, W. Stolz
physica status solidi (b) 246 (3) (2009), pp. 527 - 531

2008

Analytical theory for favorable defects in tunnel diodes
K. Jandieri, S. D. Baranovskii, W. Stolz, and F. Gebhard
J. Appl. Phys. 104 (11) (2008), 114511

Resonant electron tunneling through defects in GaAs tunnel diodes
K. Jandieri, S. D. Baranovskii, O. Rubel, W. Stolz, F. Gebhard, W. Guter, M. Hermle, and A. W. Bett
J. Appl. Phys. 104 (9) (2008), 094506

5-W Yellow Laser by Intracavity Frequency Doubling of High-Power Vertical-External-Cavity Surface-Emitting Laser
M. Fallahi, L. Fan, Y. Kaneda, C. Hessenius, J. Hader, H. Li, J. V. Moloney, B. Kunert, W. Stolz, S. W. Koch, J. Murray, R. Bedford
IEEE Photonics Technology Letters 20 (20) (2008), pp. 1700 - 1702

Local structure of Mn in hydrogenated Ga_1-xMn_xAs
C. Bihler, G. Ciatto, H. Huebl, G. Martinez-Criado, P. J. Klar, K. Volz, W. Stolz, W. Schoch, W. Limmer, F. Filippone, A. Amore Bonapasta, and M. S. Brandt
Phys. Rev. B 78 (23) (2008), 235208

In situ verification of single-domain III-V on Si (100) growth via metal-organic vapor phase epitaxy
H. Döscher, T. Hannappel, B. Kunert, A. Beyer, K. Volz, and W. Stolz
Appl. Phys. Lett. 93 (17) (2008), 172110

Si (001) surface preparation for the antiphase domain free heteroepitaxial growth of GaP on Si substrate
B. Kunert, I. Németh, S. Reinhard, K. Volz, and W. Stolz
Thin Solid Films 517 (1) (2008), pp. 140 - 143

Influence of GaInP ordering on the electronic quality of concentrator solar cells
I. Garcia, I. Rey-Stolle, C. Algora, W. Stolz and K. Volz
Journal of Crystal Growth 310 (23) (2008), pp. 5209 - 5213

Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers
J. Chamings, A. R. Adams, S. J. Sweeney, B. Kunert, K. Volz, and W. Stolz
Appl. Phys. Lett. 93 (10) (2008), 101108

Modeling the compositional dependence of electron diffraction in dilute GaAs- and GaP-based compound semiconductors
O. Rubel, I. Németh, W. Stolz, and K. Volz
Phys. Rev. B 78 (7) (2008), 075207

Direct structural evidence of the change in N-III bonding in (GaIn)(NAs) before and after thermal annealing
K. Volz, T. Torunski, O. Rubel, and W. Stolz
J. Appl. Phys. 104 (5) (2008), 053504

Monolithic integration of Ga(NAsP)/(BGa)P multi-quantum well structures on (001) silicon substrate by MOVPE
B. Kunert, S. Zinnkann, K. Volz, and W. Stolz
Journal of Crystal Growth 310 (23) (2008), pp. 4776 - 4779

Ways to quantitatively detect antiphase disorder in GaP films grown on Si (001) by transmission electron microscopy
I. Németh, B. Kunert, W. Stolz, K. Volz
Journal of Crystal Growth 310 (23) (2008), pp. 4763 - 4767

Doping, Electrical Properties and Solar Cell Application of GaInNAs
K. Volz, W. Stolz, J. Teubert, P. J. Klar, W. Heimbrodt, F. Dimroth, C. Baur, und A. W. Bett
in "Dilute III-V Nitride Semiconductors and Material Systems: Physics and Technolgy", Ed. A. Erol
Springer Series in Materials Science 105 (2008), pp. 369 - 404

Properties and Laser Applications of the GaP-based (GaNAsP)-Material System for Integration to Si Substrates
B. Kunert, K. Volz, und W. Stolz
in "Dilute III-V Nitride Semiconductors and Material Systems: Physics and Technology", Ed. A. Erol
Springer Series in Materials Science 105 (2008), pp. 317 - 341

Optimization of annealing conditions of (GaIn)(NAs) for solar cell applications
K. Volz, D. Lackner, I. Németh, B. Kunert, W. Stolz, C. Baur, F. Dimroth, A. W. Bett
Journal of Crystal Growth 310 (7 - 9) (2008), pp. 2222 - 2228

Heteroepitaxy of GaP on Si: Correlation of morphology, anti-phase-domain structure and MOVPE growth conditions
I. Németh, B. Kunert, W. Stolz, K. Volz
Journal of Crystal Growth 310 (7 - 9) (2008), pp. 1595 - 1601

Resonant tunneling as a dominant transport mechanism in n-GaAs/p-GaAs tunnel diodes
K. Jandieri, S. D. Baranovskii, O. Rubel, W. Stolz, F. Gebhard, W. Guter, M. Hermle, and A. W. Bett
Appl. Phys. Lett. 92 (24) (2008), 243504

Hole confinement in quantum islands in Ga(AsSb)/GaAs/(AlGa)As heterostructures
S. Horst, S. Chatterjee, K. Hantke, P. J. Klar, I. Németh, W. Stolz, K. Volz, C. Bückers, A. Thränhardt, S. W. Koch, W. Rühle, S. R. Johnson, J.-B. Wang, Y.-H. Zhang
Appl. Phys. Lett. 92 (16) (2008), 161101

A GaAs metalorganic vapor phase epitaxy growth process to reduce Ge outdiffusion from the Ge substrate
B. Galiana, I. Rey-Stolle, C. Algora, K. Volz, and W. Stolz
Appl. Phys. Lett. 92 (15) (2008), 152102

Influence of chirp on the femtosecond excitation of a semiconductor microcavity laser
E. Kühn, A. Thränhardt, S. W. Koch, W. Stolz, S. Chatterjee, C. Lange, W. W. Rühle, W. Wohlleben, and M. Motzkus
Appl. Phys. Lett 92 (1) (2008), 011107

Annealing experiments of the GaP based dilute nitride Ga(NAsP)
B. Kunert, D. Trusheim, V. Voßebürger, K. Volz, W. Stolz
physica status solidi (a) 205 (1) (2008), pp. 114 - 119

Photoluminescence under magnetic field and hydrostatic pressure for probing the electronic properties of GaAsN
A. Polimeni, G. Pettinari, R. Trotta, F. Masia, M. Felici, M. Capizzi, A. Lindsay, E. P. O'Reilly, T. Niebling, W. Stolz, P. J. Klar, F. Martelli, S. Rubini
physica status solidi (a) 205 (1) (2008), pp. 107 - 113

Optical bistability and spatial resonator solitons based on exciton-polariton nonlinearity
Y. Larionova, W. Stolz, and C. O. Weiss
Optics Letters 33 (4) (2008), pp. 321 - 323

Zero-phonon lines of nitrogen-cluster states in GaN_xAs_1-x:H identified by time-resolved photoluminiscence
K. Hantke, S. Horst, S. Chatterjee, P. J. Klar, K. Volz, W. Stolz, W. W. Rühle, F. Masia, G. Pettinari, A. Polimeni and M. Capizzi
Journal of Materials Science 43 (12) (2008), pp. 4344 - 4347

Exact Solution for Hopping Dissociation of Germinate Electron-Hole Pairs in a Disordered Chain
O. Rubel, S. D. Baranovskii, W. Stolz, and F. Gebhard
Phys. Rev. Lett. 100 (19) (2008), 196602

Spectral and time dependences of the energy transfer of bound optical excitations in GaP(N)
T. Niebling, O. Rubel, W. Heimbrodt, W. Stolz, S. D. Baranovskii, P. J. Klar and J. F. Geisz
Journal of Physics: Condensed Matter 20 (1) (2008), 015217

Role of strain and properties of N clusters at the onset of the alloy limit in GaAs_1−xN_x
A. Polimeni, F. Masia, G. Pettinari, R. Trotta, M. Felici, M. Capizzi, A. Lindsay, E. P. O’Reilly, T. Niebling, W. Stolz and P. J. Klar
Phys. Rev. B 77 (15) (2008), 155213

Antiphase Boundries in GaAs/Ge and GaP/Si
I. Németh, B. Kunert, W. Stolz und K. Volz
in "Microscopy of Semiconducting Materials 2007" Eds. P. A. Midgley, A. G. Cullis, Springer
Springer Proceedings in Physics 120 (2) (2008), pp. 107 - 110

2007

Excitons bound to nitrogen pairs in GaAs as seen by photoluminescence of high spectral and spatial resolution
D. Karaiskaj, A. Mascarenhas, J. F. Klem, K. Volz, W. Stolz, M. Adamcyk, T. Tiedje
Phys. Rev. B 76 (12) (2007), 125209

Highly strained InGAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm
L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. W. Koch, J. T. Murray, and R. Bedford
Appl. Phys. Lett. 91 (13) (2007), 131114

Kinetic effects in recombination of optical excitations in disordered quantum heterostructures: Theory and experiment
O. Rubel, S. D. Baranovskii, K. Hantke, B. Kunert, W. W. Rühle, P. Thomas, K. Volz, W. Stolz
Journal of Luminescence 127 (2) (2007), pp. 285 - 290

Volatile Imido-Hydrazido Compounds of the Refractory Metals Niobium, Tantalum, Molybdenum, and Tungsten
D. Gaess, K. Harms, M. Pokoj, W. Stolz, and J. Sundermeyer
Inorg. Chem. 46 (16) (2007), pp. 6688 - 6701

Low threshold 1260 nm (GaIn)(NAs) semiconductor disk laser
W. Diehl, P. Brick, B. Kunert, S. Reinhard, K. Volz, and W. Stolz
Appl. Phys. Lett. 91 (7) (2007), 071103

Spectral dependence of the photoluminescence decay in disordered semiconductors
O. Rubel, W. Stolz, and S. D. Baranovskii
Appl. Phys. Lett. 91 (2) (2007), 021903

Annealing effects on the nanoscale indium and nitrogen distribution in Ga(NAs) and (GaIn)(NAs) quantum wells
K. Volz, T. Torunski, O. Rubel, W. Stolz, P. Kruse, D. Gerthsen, M. Schowalter, and A. Rosenauer
J. Appl. Phys. 102 (8) (2007), 083504

Microstructural analysis of Ga(NAs)/GaP heterostructures
I. Németh, T. Torunski, B. Kunert, W. Stolz, and K. Volz
J. Appl. Phys. 101 (12) (2007), 123524

Dynamic behavior of 1040 nm semiconductor disk lasers on a nanosecond time scale
W. Diehl, P. Brick, S. Chatterjee, S. Horst, K. Hantke, W. W. Rühle, W. Stolz, A. Thränhardt, and S. W. Koch
Appl. Phys. Lett. 90 (24) (2007), 241102

Linearly polarized dual-wavelength vertical-external-cavity surface-emitting laser
L. Fan, M. Fallahi, J. Hader, A. R. Zakharian, J. V. Moloney, W. Stolz, S. W. Koch, R. Bedford and J. T. Murray
Appl. Phys. Lett. 90 (18) (2007), 181124

Material Development for Improved 1 eV (GaIn)(NAs) Solar Cell Structures
K. Volz, T. Torunski, D. Lackner, O. Rubel, W. Stolz, C. Baur, S. Müller, F. Dimroth, and A. W. Bett
Journal of Solar Energy Engineering - Transactions of the ASME 129 (3) (2007), pp. 266 - 271

Extended Tunability in a Two-Chip VECSEL
L. Fan, M. Fallahi, A. R. Zakharian, J. Hader, J. V. Moloney, R. Bedford, J. T. Murray, W. Stolz, S. W. Koch
IEEE Photonics Technology Letters 19 (8) (2007), pp. 544 - 546

Dilute nitride Ga(NAsP)/GaP-heterostructures: toward a material development for novel optoelectronic functionality on Si-substrate
B. Kunert, K. Volz, W. Stolz
physica status solidi (b) 244 (8) (2007), pp. 2730 - 2739

Silicon carbide and boron carbide thin films formed by plasma immersion ion implantation of hydrocarbon gases
W. Ensinger, G. Kraft, F. Sittner, K. Volz, K. Baba and R. Hatada
Surface and Coatings Technology 201 (19 - 20) (2007), pp. 8366 - 8369

Diamond-like carbon films formed by hydrocarbon plasma immersion ion implantation with methane/toluene mixtures
W. Ensinger, K. Volz, K. Baba, R. Hatada
Nucl. Instr. Meth. Phys. Res. B 257 (2007), pp. 692 - 695

Influence of annealing on the optical and structural properties of dilute N-containing III/V semiconductor heterostructures
K. Volz, J. Koch, B. Kunert, I. Németh, W. Stolz
Journal of Crystal Growth 298 (2007), pp. 126 - 130

MOVPE growth conditions of the novel direct band gap, diluted nitride Ga(NasP) material system pseudomorphically strained on GaP-substrate
B. Kunert, K. Volz, J. Koch, W. Stolz
Journal of Crystal Growth 298 (2007), pp. 121 - 125

Morphology of interior interfaces in the novel dilute nitride Ga(NAsP)/GaP material system
S. Oberhoff, B. Kunert, T. Torunski, K. Volz, W. Stolz
Journal of Crystal Growth 298 (2007), pp. 98 - 102

Hydrostatic pressure experiments on dilute nitride alloys
P. J. Klar, J. Teubert, M. Güngerich, T. Niebling, H. Grüning, W. Heimbrodt, K. Volz, W. Stolz, A. Polimeni, M. Capizzi, E. P. O'Reilly, A. Lindsay, M. Galluppi, L. Geelhaar, H. Riechert, S. Tomić
physica status solidi (b) 244 (1) (2007), pp. 24 - 31

Electron Mass in Dilute Nitrides and its Anomalous Dependence on Hydrostatic Pressure
G. Pettinari, A. Polimeni, F. Masia, R. Trotta, M. Felici, M. Capizzi, T. Niebling, W. Stolz, and P. J. Klar
Phys. Rev. Lett. 98 (2007), 146402

2006

Multichip vertical-external-cavity surface-emitting lasers: a coherent power scaling scheme
L. Fan, M. Fallahi, J. Hader, A. R. Zakharian, J. V. Moloney, J. T. Murray, R. Bedford, W. Stolz, and S. W. Koch
Optics Letters 31 (24) (2006), pp. 3612 - 3614

Influence of nitrogen-cluster states on the gyromagnetic factor of electrons in GaAs_1-xN_x
G. Pettinari, F. Masia, A. Polimeni, M. Felici, A. Frova, M. Capizzi, A. Lindsay, E. P. O'Reilly, P. J. Klar, W. Stolz, G. Bais, M. Piccin, S. Rubini, F. Martelli, and A. Franciosi
Phys. Rev. B 74 (24) (2006), 245202

Model of annealing-induced short-range order effects in (GaIn)(NP) alloys
O. Rubel, B. Kunert, S. D. Baranovskii, F. Grosse, K. Volz, and W. Stolz
Phys. Rev. B 74 (19) (2006), 195206

Compositional disorder in GaAs_1-xN_x:H investigated by photoluminescence
M. Felici, R. Trotta, F. Masia, A. Polimeni, A. Miriametro, M. Capizzi, P. J. Klar, and W. Stolz
Phys. Rev. B 74 (8) (2006), 085203

Optimizing the performance of a vertical-cavity surface-emitting laser
S. Chatterjee, W. Wohlleben, C. Lange, W. Stolz, M. Motzkus, and W. W. Rühle
Appl. Phys. Lett. 89 (15) (2006), 151122

High brightness spectral beam combination of high-power vertical-external-cavity surface-emitting lasers
Y. Kaneda, L. Fan, T.-C. Hsu, N. Peyghambarian, M. Fallahi, A. R. Zakharian, J. Hader, J. V. Moloney, W. Stolz, S. Koch, R. Bedford, A. Sevian, L. Glebov
IEEE Photonics Technology Letters 18 (17) (2006), pp. 1795 -1797

Tuning the magnetic properties of GaAs:Mn/MnAs hybrids via the MnAs cluster shape
H.-A. Krug von Nidda, T. Kurz, A. Loidl, Th. Hartmann, P. J. Klar, W. Heimbrodt, M. Lampalzer, K. Volz and W. Stolz
Journal of Physics: Condensed Matter 18 (26) (2006), pp. 6071 - 6083

Excitation transfer between extended band states and N-related localized states in GaP_1-xN_x with x up to 1%
T. Niebling, T. Lapp, J. Kampmann, P. J. Klar, W. Heimbrodt, B. Kunert, K. Volz, W. Stolz
Physica E 32 (1 - 2) (2006), pp. 222 - 225

Competition of N-passivation and Te-passivation in hydrogenation of Te-doped (Ga,In)(N,As)
J. Teubert, P. J. Klar, W. Heimbrodt, K. Volz, W. Stolz, A. Polimeni, M. Capizzi
Physica E 32 (1 - 2) (2006), pp. 218 - 221

Lasing in optically pumped Ga(NAsP)/GaP heterostructures
S. Borck, S. Chatterjee, B. Kunert, K. Volz, W. Stolz, J. Heber, W. W. Rühle, N. C. Gerhardt, and M. R. Hofmann
Appl. Phys. Lett. 89 (3) (2006), 031102

Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by intracavity frequency doubling
L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz
Appl. Phys. Lett. 88 (25) (2006), 251117

Luminescence investigations of the GaP-based dilute nitride Ga(NAsP) material system
B. Kunert, K. Volz, I. Németh, W. Stolz
Journal of Luminescence 121 (2) (2006), pp. 361 - 364

Model of temperature quenching of photoluminescence in disordered semiconductors and comparison to experiment
O. Rubel, S. D. Baranovskii, K. Hantke, B. Kunert, W. W. Rühle, P. Thomas, K. Volz, and W. Stolz
Phys. Rev. B 73 (23) (2006), 233201

Non-radiative recombination of optical excitations in (GaIn)(NAs) quantum wells
O. Rubel, S. D. Baranovskii, K. Hantke, W. W. Rühle, P. Thomas, K. Volz, W. Stolz
physica status solidi (c) 3 (7) (2006), pp. 2481 - 2484

Near room temperature electrical injection lasing for dilute nitride Ga(NAsP)/GaP quantum-well structures grown by metal organic vapour phase epitaxy
B. Kunert, A. Klehr, S. Reinhard, K. Volz, W. Stolz
Electronics Letters 42 (10) (2006), pp. 601 - 603

Direct-band-gap Ga(NAsP)-material system pseudomorphically grown on GaP substrate
B. Kunert, K. Volz, J. Koch, and W. Stolz
Appl. Phys. Lett. 88 (18) (2006), 182108

Nanoanalytical quantification of the nitrogen content in Ga(NAs)/GaAs by using transmission electron microscopy in combination with refined structure factor calculation
K. Volz, O. Rubel, T. Torunski, S. D. Baranovskii, and W. Stolz
Appl. Phys. Lett. 88 (8) (2006), 081910

Tunable high-power high-brightness linearly polarized vertical-external-cavity surface-emitting lasers
L. Fan, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, A. R. Zakharian, J. Hader, J. V. Moloney, W. Stolz, and S. W. Koch
Appl. Phys. Lett. 88 (2) (2006), 021105

Interaction between conduction band edge and nitrogen states probed by carrier effective-mass measurements in GaAs_1-xN_x
F. Masia, G. Pettinari, A. Polimeni, M. Felici, A. Miriametro, M. Capizzi, A. Lindsay, S. B. Healy, E. P. O'Reilly, A. Cristofoli, G. Bais, M. Piccin, S. Rubini, F. Martelli, A. Franciosi, P. J. Klar, K. Volz, and W. Stolz
Phys. Rev. B 73 (7) (2006), 073201

Optical activity of a single MnAs Cluster: Birefringence or Kerr effect
M. Leuschner, P. J. Klar, W. Heimbrodt, W. W. Rühle, S. Hara, W. Stolz, K. Volz, T. Kurz, A. Loidl, H.-A. Krug von Nidda
Journal of Magnetism and Magnetic Materials 301 (2) (2006), pp. 478 - 488

Correlation of band formation and local vibrational mode structure of Ga_0.95Al_0.05As_1-xN_x with 0 ≤ x ≤ 0.03
M. Güngerich, P. J. Klar, W. Heimbrodt, K. Volz, K. Köhler, J. Wagner, A. Polimeni, M. Capizzi, H. Ch. Alt, and Y. V. Gomeniuk
physica status solidi (c) 3 (3) (2006), pp. 619 - 622

First demonstration of electrical injection lasing in the novel dilute nitride Ga(NAsP)/GaP-material system
B. Kunert, S. Reinhard, J. Koch, M. Lampalzer, K. Volz, W. Stolz
physica status solidi (c) 3 (3) (2006), pp. 614 - 618
2001 - 2005

2005

Carrier relaxation dynamics in annealed and hydrogenated (GaIn)(NAs)/GaAs quantum wells
K. Hantke, J. D. Heber, S. Chatterjee, P. J. Klar, K. Volz, W. Stolz, W. W. Rühle, A. Polimeni, and M. Capizzi
Appl. Phys. Lett. 87 (25) (2005), 252111

Room-temperature threshold reduction in vertical-cavity surface-emitting lasers by injection of spin-polarized electrons
J. Rudolph, S. Döhrmann, D. Hägele, M. Oestreich, and W. Stolz
Appl. Phys. Lett. 87 (24) (2005), 241117

Bound-to-bound and bound-to-free transitions in surface photovoltage spectra: determination of the band offsets for In_xGa_1-xAs and In_xGa_1-xAs_1-yN_y quantum wells
M. Galluppi, L. Geelhaar, H. Riechert, M. Hetterich, A. Grau, S. Birner, and W. Stolz
Phys. Rev. B 72 (15) (2005), 155324

Quantitative description of disorder parameters in (GaIn)(NAs) quantum wells from the temperature-dependent photoluminescence spectroscopy
O. Rubel, M. Galluppi, S. D. Baranovskii, K. Volz, L. Geelhaar, H. Riechert, P. Thomas, and W. Stolz
J. Appl. Phys. 98 (6) (2005), 063518

Spin-dependent localization effects in GaAs:Mn/MnAs granular paramagnetic-ferromagnetic hybrids at low temperatures
C. Michel, C. H. Thien, S. Ye, P. J. Klar, W. Heimbrodt, S. D. Baranovskii, P. Thomas, M. Lampalzer, K. Volz, W. Stolz, B. Goldlücke
Superlattices and Microstructures 37 (5) (2005), pp. 321 - 326

Over 3 W high-efficiency vertical-external-cavity surface-emitting lasers and application as efficient fiber laser pump sources
L. Fan, M. Fallahi, J. Hader, A. R. Zakharian, M. Kolesik, J. V. Moloney, T. Qiu, A. Schülzgen, N. Peyghambarian, W. Stolz, S. W. Koch, and J. T. Murray
Appl. Phys. Lett. 86 (21) (2005), 211116

FULLSPECTRUM: a new PV wave making more efficient use of the solar spectrum
A. Luque, A. Martí, A. Bett, V. M. Andreev, C. Jaussaud, J. A. M. van Roosmalen, J. Alonso, A. Räuber, G. Strobl, W. Stolz, C. Algora, B. Bitnar, A. Gombert, C. Stanley, P. Wahnon, J. C. Conesa, W. G. J. H. M. van Sark, A. Meijerink, G. P. M. van Klink, K. Barnham, R. Danz, T. Meyer, I. Luque-Heredia, R. Kenny, C. Christofides, G. Sala, P. Benítez
Solar Energy Materials and Solar Cells 87 (1 - 4) (2005), pp. 467 - 479

Time-resolved photoluminescence of type-I and type-II (GaIn)As/Ga(NAs) heterostructures
K. Hantke, J. D. Heber, C. Schlichenmaier, A. Thränhardt, T. Meier, B. Kunert, K. Volz, W. Stolz, S. W. Koch, and W. W. Rühle
Phys. Rev. B 71 (16) (2005), 165320

Vibrational properties of GaAs_0.915N_0.085 under hydrostatic pressures up to 20 GPa
M. Güngerich, P. J. Klar, W. Heimbrodt, J. Koch, W. Stolz, M. P. Halsall, and P. Harmer
Phys. Rev. B 71 (7) (2005), 075201

High-power optically pumped VECSEL using a double-well resonant periodic gain structure
L. Fan, J. Hader, M. Schillgalies, M. Fallahi, A. R. Zakharian, J. V. Moloney, R. Bedford, J. T. Murray, S. W. Koch, W. Stolz
IEEE Photonics Technology Letters 17 (9) (2005), pp. 1764 - 1766

Type I-type II transition in InGaAs-GaNAs heterostructures
C. Schlichenmaier, H. Grüning, A. Thränhardt, P. J. Klar, B. Kunert, K. Volz, W. Stolz, W. Heimbrodt, T. Meier, S. W. Koch, J. Hader, and J. V. Moloney
Appl. Phys. Lett. 86 (8) (2005), 081903

On the theoretical description of photoluminescence in disordered quantum structures
O. Rubel, S. D. Baranovskii, K. Hantke, J. D. Heber, J. Koch, P. Thomas, J. M. Marshall, W. Stolz, W. W. Rühle
Journal of Optoelectronics and Advanced Materials 7 (1) (2005), pp. 115 - 120

Detection of nanometer-sized strain fields in (GaIn)(NAs) alloys by specific dark field transmission electron microscopic imaging
K. Volz, T. Torunski, and W. Stolz
J. Appl. Phys. 97 (1) (2005), 014306

Magnetic Interactions in Granular Paramagnetic–Ferromagnetic GaAs: Mn/MnAs Hybrids
W. Heimbrodt, P. J. Klar, S. Ye, M. Lampalzer, C. Michel, S. D. Baranovskii, P. Thomas und W. Stolz
Journal of Superconductivity 18 (3) (2005), pp. 315 - 320

2004

Tuning of the average p-d exchange in (Ga,Mn)As by modification of the Mn electronic structure
Th. Hartmann, S. Ye, P. J. Klar, W. Heimbrodt, M. Lampalzer, W. Stolz, T. Kurz, A. Loidl, H.-A. Krug von Nidda, D. Wolverson, J. J. Davies, H. Overhof
Phys. Rev. B 70 (23) (2004), 233201

Influence of N on the electron transport in (Ga,In)(N,As) probed by magnetotransport under hydrostatic pressure
J. Teubert, P. J. Klar, W. Heimbrodt, K. Volz, W. Stolz
IEE Proceedings - Optoelectronics 151 (5) (2004), pp. 357 - 360

Te-co-doping experiments in ferromagnetic Mn(Ga)As/GaAs-cluster hybrid layers by MOVPE
M. Lampalzer, S. Nau, C. Pietzonka, W. Treutmann, K. Volz, W. Stolz
Journal of Crystal Growth 272 (1 - 4) (2004), pp. 772 - 777

MOVPE growth experiments of the novel (GaIn)(NP)/GaP material system
B. Kunert, J. Koch, T. Torunski, K. Volz, W. Stolz
Journal of Crystal Growth 272 (1 - 4) (2004), pp. 753 - 759

Specific structural and compositional properties of (GaIn)(NAs) and their influence of optoelectronic device performance
K. Volz, T. Torunski, B. Kunert, O. Rubel, S. Nau, S. Reinhard, W. Stolz
Journal of Crystal Growth 272 (1 - 4) (2004), pp. 739 - 747

Comparison of dilute nitride growth on a single- and 8x4-inch multiwafer MOVPE system for solar cell applications
F. Dimroth, C. Baur, A. W. Bett, K. Volz, W. Stolz
Journal of Crystal Growth 272 (1 - 4) (2004), pp. 726 - 731

MOVPE growth of (AlGaIn)P/(GaIn)P heterostructures using TBP
N. El-Zein, A. Greiling, J. Koch, W. Stolz, S. Reinhard, B. T. McDermott
Journal of Crystal Growth 272 (1 - 4) (2004), pp. 609 - 614

Columnar [001]-oriented nitrogen order in Ga(NAs) and (GaIn)(NAs) alloys
O. Rubel, K. Volz, T. Torunski, S. D. Baranovskii, F. Grosse, and W. Stolz
Appl. Phys. Lett. 85 (24) (2004), 5908 - 5910; erratum Appl. Phys. Lett. 87 (4) Errata (2005), 049903

Tunable variation of the electron effective mass and exciton radius in hydrogenated GaAs_1-xN_x
A. Polimeni, G. Baldassarri Höger von Högersthal, F. Masia, A. Frova, M. Capizzi, S. Sanna, V. Fiorentini, P. J. Klar, and W. Stolz
Phys. Rev. B 69 (4) (2004), 041201 (R)

Enhanced weak Anderson localization phenomena in the magnetoresistance of n-type (Ga,In)(N,As)
J. Teubert, P. J. Klar, W. Heimbrodt, K. Volz, W. Stolz, P. Thomas, G. Leibiger, and V. Gottschalch
Appl. Phys. Lett. 84 (5) (2004), pp. 747 - 749

Tuning of the electron effective mass and exciton wavefunction size in GaAs_1-xN_x
A. Polimeni, F. Masia, G. Baldassarri Höger von Högersthal, A. Frova, M. Capizzi, S. Sanna, V. Fiorentini, P. J. Klar, W. Stolz
Physica E 21 (2 - 4) (2004), pp. 747 - 751

Evidence for a type I to type II transition in (Ga,In)(N,As)/Ga(N,As) quantum well structures
H. Grüning, P. J. Klar, W. Heimbrodt, S. Nau, B. Kunert, K. Volz, W. Stolz, G. Weiser
Physica E 21 (2 - 4) (2004), pp. 666 - 670

Cluster formation and magnetic properties of Mn-incorporated (GaIn)As/InP layers grown by metal-organic vapor phase epitaxy
S. Hara, M. Lampalzer, T. Torunski, K. Volz, W. Treutmann and W. Stolz
Journal of Crystal Growth 261 (2 - 3) (2004), pp. 330 - 335

Hopping relaxation of excitons in GaInNAs/GaNAs quantum wells
H. Grüning, K. Kohary, S. D. Baranovskii, O. Rubel, P. J. Klar, A. Ramakrishnan, G. Ebbinghaus, P. Thomas, W. Heimbrodt, W. Stolz, W. W. Rühle
physica status solidi (c) 1 (1) (2004), pp. 109 - 112

Correlation of the structural and electronic properties of (Ga,In)(N,As) based heterostructures
P. J. Klar and K. Volz
Journal of Physics: Condensed Matter 16 (31) (2004), S 3053

2003

Anisotropy of the magnetotransport in (Ga,Mn)As/MnAs paramagnetic-ferromagnetic hybrid structures
S. Ye, P. J. Klar, Th. Hartmann, W. Heimbrodt, M. Lampalzer, S. Nau, T. Torunski, W. Stolz, T. Kurz, H.-A. Krug von Nidda, and A. Loidl
Appl. Phys. Lett. 83 (19) (2003), pp. 3927 - 3929

Monitoring the non-parabolicity of the conduction band in GaN_0.018As_0.982/GaAs quantum wells
P. J. Klar, H. Grüning, W. Heimbrodt, J. Koch, W. Stolz, S. Tomić, E. P. O'Reilly
Solid-State Electronics 47 (3) (2003), pp. 437 - 441

Hydrogen-related effects in dilute nitrides
A. Polimeni, F. Masia, M. Felici, G. Baldassarri Höger von Högersthal, M. Bissiri, A. Frova, M. Capizzi, P. J. Klar, W. Stolz, I. A. Buyanova, W. M. Chen, H. P. Xin, C. W. Tu
Physica B: Condensed Matter 340 - 342 (2003), pp. 371 - 376

Magneto-Optical Spectroscopy on (Ga,Mn)As-Based Layers - Correlation Between the p-d-Exchange Integral and Doping
T. Hartmann, S. Ye, T. Henning, P. J. Klar, M. Lampalzer, W. Stolz und W. Heimbrodt
Journal of Superconductivity 16 (2) (2003), pp. 423 - 426

Signatures of biexcitons and triexcitons in coherent non-degenerate semiconductor optics
T. Meier, C. Sieh, E. Finger, W. Stolz, W. W. Rühle, P. Thomas, S. W. Koch, A. D. Wieck
physica status solidi (b) 238 (3) (2003), pp. 537 - 540

Autocorrelation spectroscopy on single GaInAs/GaAs quantum wells
U. Neuberth, G. von Freymann, M. Wegener, S. Nau, W. Stolz
physica status solidi (b) 238 (3) (2003), pp. 498 - 501

Development of a 1.0 eV (GaIn)(NAs) solar cell
C. Baur, A. W. Bett, F. Dimroth, S. van Riesen, B. Kunert, M. Traversa, K. Volz, W. Stolz
Proc. of 3^rd World Conf. "Photovoltaic Energy Conversion", Osaka, Japan 1 (2003), pp. 677 - 680

Correlation between lasing properties and band alignment of edge emitting lasers with (Ga,In)(N,As)/Ga(N,As) active regions
H. Grüning, P. J. Klar, W. Heimbrodt, G. Weiser, J. Koch, S. Nau, W. Stolz, R. Fehse, A. R. Adams, A. Ramakrishnan, G. Ebbinghaus
physica status solidi (b) 235 (2) (2003), pp. 417 - 422

Influence of Codoping on the Magnetoresistance of Paramagnetic (Ga,Mn)As
S. Ye, P. J. Klar, T. Henning, M. Lampalzer, W. Stolz, W. Heimbrodt
Journal of Superconductivity 16 (1) (2003), pp. 159 - 162

Early manifestation of localization effects in diluted Ga(AsN)
F. Masia, A. Polimeni, G. Baldassarri Höger von Högersthal, M. Bissiri, M. Capizzi, P. J. Klar, and W. Stolz
Appl. Phys. Lett. 82 (25) (2003), pp. 4474 - 4476

Correlation of the physical properties and the interface morphology of AlGaAs/GaAs heterostructures
L. Gottwaldt, K. Pierz, F. J. Ahlers, E. O. Göbel, S. Nau, T. Torunski, and W. Stolz
J. Appl. Phys. 94 (4) (2003), pp. 2464 - 2472

Unusual properties of metastable (Ga,In)(N,As) containing semiconductor structures
P. J. Klar, H. Grüning, L. Chen, T. Hartmann, D. Golde, M. Güngerich, W. Heimbrodt, J. Koch, K. Volz, B. Kunert, T. Torunski, W. Stolz, A. Polimeni, M. Capizzi, G. Dumitras, L. Geelhaar, H. Riechert
IEE Proceedings - Optoelectronics 150 (1) (2003), pp. 28 - 35

Global changes of the band structure and the crystal lattice of Ga(N,As) due to hydrogenation
P. J. Klar, H. Grüning, M. Güngerich, W. Heimbrodt, J. Koch, T. Torunski, W. Stolz, A. Polimeni, and M. Capizzi
Phys. Rev. B 67 (12) (2003), 121206 (R)

Mesoscopic island structure at GaAs/(AlGa)As interfaces grown by MBE
L. Gottwaldt, K. Pierz, F. J. Ahlers, E. O. Göbel, S. Nau, T. Torunski, W. Stolz
Journal of Crystal Growth 251 (1 - 4) (2003), pp. 85 - 89

The influence of the quantum lifetime on the width of the quantum Hall plateaus
L. Gottwaldt, K. Pierz, F. J. Ahlers, L. Schweitzer, E. O. Göbel, W. Stolz
Inst. Phys. Conf. Ser. 174 (2003), pp. 105 - 108

Overgrowth experiments of ferromagnetic (MnGa)As-cluster layers by MOVPE
M. Lampalzer, K. Volz, W. Treutmann, S. Nau, T. Torunski, K. Megges, J. Lorberth, W. Stolz
Journal of Crystal Growth 248 (2003), pp. 474 - 478

Nitrogen incorporation in (GaIn)(NAs) for 1.3 µm VCSEL grown with MOVPE
A. Ramakrishnan, G. Steinle, D. Supper, W. Stolz, G. Ebbinghaus
Journal of Crystal Growth 248 (2003), pp. 457 - 462

Doping behaviour of Si, Te, Zn and Mg in lattice-matched (GaIn)(NAs)/GaAs bulk films
K. Volz, J. Koch, B. Kunert and W. Stolz
Journal of Crystal Growth 248 (2003), pp. 451 - 456

Argon versus nitrogen ion beam assisted deposition of amorphous carbon and carbon-nitrogen films on aluminium for protection against aqueous corrosion
W. Ensinger, O. Lensch, F. Sittner, J. Knecht, K. Volz, T. Matsutani and M. Kiuchi
Nucl. Instr. Meth. Phys. Res. B 206 (2003), pp. 334 - 338

The role of Sb in the MBE growth of (GaIn)(NAsSb)
K. Volz, V. Gambin, W. Ha, M. A. Wistey, H. Yuen, S. Bank and J. S. Harris
Journal of Crystal Growth 251 (1 - 4) (2003), pp. 360 - 366

2002

Coulomb Correlations and Biexciton Signatures in Coherent Excitation Spectroscopy of Semiconductor Quantum Wells
E. Finger, S. Kraft, M. Hofmann, T. Meier, S. W. Koch, W. Stolz, W. W. Rühle, A. Wieck
physica status solidi (b) 234 (1) (2002), pp. 424 - 434

N-Composition and Pressure Dependence of the Inter Band Transitions of Ga(N,As)/GaAs Quantum Wells
H. Grüning, P. J. Klar, W. Heimbrodt, J. Koch, W. Stolz, A. Lindsay, S. Tomić, E. P. O'Reilly
High Pressure Research 22 (2) (2002), pp. 293 - 297

Ferromagnetic resonance studies of (Ga,Mn)As with MnAs clusters
Th. Hartmann, M. Lampalzer, P. J. Klar, W. Stolz, W. Heimbrodt, H.-A. Krug von Nidda, A. Loidl, L. Svistov
Physica E 13 (2 - 4) (2002), pp. 572 - 576

Interband transitions of quantum wells and device structures containing Ga(N,As) and (Ga,In)(N,As)
P. J. Klar, H. Grüning, W. Heimbrodt, G. Weiser, J. Koch, K. Volz, W. Stolz, S. W. Koch, S. Tomić, S. A. Choulis, T. J. C. Hosea, E. P. O'Reilly, M. Hofmann, J. Hader and J. V. Moloney
Semiconductor Science and Technology 17 (8) (2002), pp. 830 - 842

Spin injection, spin transport and spin coherence
M. Oestreich, M. Bender, J. Hübner, D. Hägele, W. W. Rühle, Th. Hartmann, P. J. Klar, W. Heimbrodt, M. Lampalzer, K. Volz and W. Stolz
Semiconductor Science and Technology 17 (4) (2002), 285 - 297

Emission dynamics and optical gain of 1.3-µm (GaIn)(NAs)/GaAs lasers
M. R. Hofmann, N. Gerhardt, A. M. Wagner, C. Ellmers, F. Höhnsdorf, J. Koch, W. Stolz, S. W. Koch, W. W. Rühle, J. Hader, J. V. Moloney, E. P. O'Reilly, B. Borchert, A. Y. Egorov, H. Riechert, H. C. Schneider, W. W. Chow
IEEE Journal of Quantum Electronics 38 (2) (2002), pp. 213 - 221

MOVPE-growth and characterization of metastable (GaIn)(NAs)/GaAs heterostructures for 1.3 µm lasers
A. Ramakrishnan, G. Ebbinghaus, W. Stolz
Inst. Phys. Conf. Ser. 170 (2002), pp. 825 - 830

MOVPE growth experiments and magnetic characterization of (GaMn)As layer structures
M. Lampalzer, K. Volz, W. Treutmann, S. Nau, T. Torunski, K. Megges, J. Lorberth and W. Stolz
Inst. Phys. Conf. Ser. 170 (2002), pp. 249 - 254

Surface-emitting second-harmonic generation in AlGaAs/GaAs waveguides
C. Degen, G. Jennemann, I. Fischer, W. Elsäßer, S. Leu, R. Rettig und W. Stolz
Optical and Quantum Electronics 34 (7) (2002), pp. 707 - 716

Semiconductor resonator solitons above bandgap
V. B. Taranenko, C. O. Weiss, and W. Stolz
J. Opt. Soc. Am. B 19 (4) (2002), pp. 684 - 688

Pitting corrosion of aluminium coated by ion beam assisted deposition of carbon with argon ions at different ion-to-atom arrival ratios
W. Ensinger, O. Lensch, J. Knecht, K. Volz, T. Matsutani and M. Kiuchi
Surface and Coatings Technology 158 - 159 (2002), pp. 594 - 598

Growth of the carbide, nitride and oxide of silicon by plasma immersion ion implantation
K. Volz and W. Ensinger
Surface and Coatings Technology 156 (1 - 3) (2002), p. 237 - 243

The multi-aperture hollow target: a method for determining ion incidence angles in plasma immersion ion implantation
W. Ensinger, K. Volz, M. Galonska, Ch. Gabor and H. Klein
Surface and Coatings Technology 156 (1 - 3) (2002), p. 92 - 96

2001

Influence of varying N-environments on the properties of (GaIn)(NAs) vertical-cavity surface-emitting lasers
S. A. Choulis, T. J. C. Hosea, P. J. Klar, M. Hofmann, and W. Stolz
Appl. Phys. Lett. 79 (26) (2001), pp. 4277 - 4279

Structure and composition of (GaMn)As formed by MOVPE
K. Volz, M. Lampalzer, A. Schaper, J. Zweck, W. Stolz
Inst. Phys. Conf. Ser. 169 (2001), pp. 211 - 214

Spintronics: Spin Electronics and Optoelectronics in Semiconductors
M. Oestreich, J. Hübner, D. Hägele, M. Bender, N. Gerhardt, M. Hofmann, W. W. Rühle, H. Kalt, Th. Hartmann, P. Klar, W. Heimbrodt, and W. Stolz
Adv. in Solid State Physics 41 (2001), pp. 173 - 186

Correlation of optical and transport properties of (AlGa)As/GaAs heterostructures
L. Gottwaldt, F. J. Ahlers, E. O. Göbel, G. Hein, S. Nau, K. Pierz, and W. Stolz
Proc. 25^th Int. Conf. "Physics of Semiconductors", Springer Proc. in Physics 87 (2001), pp. 751 - 752

Novel investigation technique for interior III/V-semiconductor interfaces
S. Nau, G. Bernatz, and W. Stolz
Proc. 25^th Int. Conf. "Physics of Semiconductors", Springer Proc. in Physics 87 (2001), pp. 435 - 436

Deviations from diffusive transport in 100 nm - 100 fs spatio-temporal pump-probe experiments on GaAs
J. Hetzler, A. Brunner, M. Wegener, S. Leu, S. Nau, and W. Stolz
Proc. 25^th Int. Conf. "Physics of Semiconductors", Springer Proc. in Physics 87 (2001), pp. 190 - 191

(Ga,In)(N,As)-fine structure of the band gap due to nearest-neighbor configurations of the isovalent nitrogen
P. J. Klar, H. Grüning, J. Koch, S. Schäfer, K. Volz, W. Stolz, W. Heimbrodt, A. M. Kamal Saadi, A. Lindsay, and E. P. O'Reilly
Phys. Rev. B 64 (12) (2001), 121203 (R)

Pressure and Temperature Dependent Studies of GaNxAs1-x/GaAs Quantum Well Structures
P. J. Klar, H. Grüning, W. Heimbrodt, J. Koch, W. Stolz, P. M. A. Vicente, A. M. Kamal Saadi, A. Lindsay, E. P. O'Reilly
physica status solidi (b) 223 (1) (2001), pp. 163 - 169

Effects of Confinement on the Coupling between Nitrogen and Band States in InGaAs_1-xN_x/GaAs (x ≤ 0.025) Structures: Pressure and Temperature Studies
S. A. Choulis, B. A. Weinstein, T. J. C. Hosea, M. Kamal-Saadi, E. P. O'Reilly, A. R. Adams, W. Stolz
physica status solidi (b) 223 (1) (2001), pp. 151 - 156

Monitoring the sign reversal of the valence band exchange integral in (Ga,Mn)As
W. Heimbrodt, Th. Hartmann, P. J. Klar, M. Lampalzer, W. Stolz, K. Volz, A. Schaper, W. Treutmann, H.-A. Krug von Nidda, A. Loidl, T. Ruf, V. F. Sapega
Physica E 10 (1 - 3) (2001), pp. 175 - 180

Spatial solitons in a pumped semiconductor resonator
V. B. Taranenko, C. O. Weiss, W. Stolz
Optics Letters 26 (2) (2001), pp. 1574 - 1576

Gain spectra of (GaIn)(NAs) laser diodes for the 1.3-µm-wavelength regime
M. Hofmann, A. Wagner, C. Ellmers, C. Schlichenmeier, S. Schäfer, F. Höhnsdorf, J. Koch, W. Stolz, S. W. Koch, W. W. Rühle, J. Hader, J. V. Moloney, E. P. O'Reilly, B. Borchert, A. Yu. Egorov, and H. Riechert
Appl. Phys. Lett. 78 (20) (2001), pp. 3009 - 3011

High-efficiency (AlGa)As/GaAs solar cells grown by MOVPE using TBAs at low-temperatures and low V/III-ratios
C. Agert, F. Dimroth, U. Schubert, A. W. Bett, S. Leu, W. Stolz
Solar Energy Materials & Solar Cells 66 (1 - 4) (2001), pp. 637 - 644

Determination of ion incidence angles in plasma immersion ion implantation by means of a hollow multi-aperture target
M. Galonska, Ch. Gabor, R. W. Thomae, H. Klein, K. Volz and W. Ensinger
Nucl. Instr. Meth. Phys. Res. B 175 - 177 (2001), pp. 658 - 662

Pitting corrosion of aluminium coated with amorphous carbon films by aron ion beam assisted deposition at low process temperature
O. Lensch, K. Volz, M. Kiuchi and W. Ensinger
Nucl. Instr. Meth. Phys. Res. B 175 - 177 (2001), pp. 575 - 579

Heteroepitaxial SiC films grown in Si by CH₄ plasma immersion ion implantation: Conditions and mechanism of their formation
K. Volz, Ch. Klatt and W. Ensinger
Nucl. Instr. Meth. Phys. Res. B 175 - 177 (2001), pp. 569 - 574

Inner wall coating of cylinders by plasma immersion ion implantation for corrosion protection
W. Ensinger, K. Volz and B. Enders
Surface and Coatings Technology 136 (1 - 3) (2001), pp. 202 - 206

Silicon carbide and amorphous carbon film formation by plasma immersion ion implantation: a comparison of methane and toluene as plasma forming gases
K. Volz, K. Baba, R. Hatada and W. Ensinger
Surface and Coatings Technology 136 (1 - 3) (2001), pp. 197 - 201

Studies on treatment homogeneity of plasma immersion ion implantation by an optical method
K. Volz, A. Hasse and W. Ensinger
Surface and Coatings Technology 136 (1 - 3) (2001), pp. 80 - 84
bis 2000

2000

Structural properties of (GaIn)(NAs)/GaAs MQW structures grown by MOVPE
F. Höhnsdorf, J. Koch, A. Hasse, K. Volz, A. Schaper, W. Stolz, C. Giannini, L. Tapfer
Physica E 8 (3) (2000), pp. 205 - 209

Structural Properties of (GaIn)(AsN)/GaAs MQW Structures Grown by MOVPE
C. Giannini, E. Carlino, L. Tapfer, F. Höhnsdorf, J. Koch, and W. Stolz
MRS Symp. "GaN and Related Alloys" Boston, USA, Proceedings Vol. 595 (1999), W3.54.1
MRS Internet Journal of Nitride Semiconductor Research (5) 1 (2000), art. no.-W3.54

Nitrogen-induced band formation in GaN_xAs_1-x studied by photoluminescence under hydrostatic pressure and photomodulated reflectance
P. J. Klar, P. M. A. Vicente, H. Grüning, W. Heimbrodt, J. Koch, F. Höhnsdorf, W. Stolz & J. Camassel
High Pressure Research 18 (1 - 6) (2000), pp. 29 - 34

Growth of antimony-based materials in a multiwafer planetary MOVPE-reactor
C. Agert, P. Lanyi, O. V. Sulima, W. Stolz, and A. W. Bett
IEE Optoelectronics 147 (3) (2000), pp. 188 - 192

Strain-induced modulation versus superlattice ordering in epitaxial (GaIn)P layers
J. Jiang, A. K. Schaper, Z. Spika, and W. Stolz
Phys. Rev. B 62 (23) (2000), pp. 15826 - 15833

Disorder-induced dephasing in semiconductors
S. Weiser, T. Meier, J. Möbius, A. Euteneuer, E. J. Mayer, W. Stolz, M. Hofmann, W. W. Rühle, P. Thomas, and S. W. Koch
Phys. Rev. B 61 (19) (2000), pp. 13088 - 13089

Morphological aspects of continuous and modulated epitaxial growth of (GaIn)P
J. Jiang, A. K. Schaper, Z. Spika, and W. Stolz
J. Appl. Phys. 88 (6) (2000), pp. 3341 - 3348

Structural Investigations of (GaIn)(NAs)/GaAs Multi-Quantum-Wells by Transmission Electron Microscopy
K. Volz, A. Hasse, A. K. Schaper, T. E. Weiric, F. Höhnsdorf, J. Koch and W. Stolz
MRS Proceedings Vol. 618 (2000), p. 291 - 296

From N isoelectronic impurities to N-induced bands in GaN_xAs_1-x alloy
P. J. Klar, H. Grüning, W. Heimbrodt, J. Koch, F. Höhnsdorf, W. Stolz, P. M. A. Vicente, and J. Camassel
Appl. Phys. Lett. 76 (23) (2000), pp. 3439 - 3441

Observations of interaction-assisted hopping transport in GaAs/Ga_1-xAl_xAs quantum wells
J. E. Golub, R. Eichmann, G. Strasser, G. Bernatz, S. Nau, W. Stolz, P. Thomas
Journal of Luminescence 91 (1 - 2) (2000), pp. 7 - 12

TEM Investigations of (GaIn)(NAs)/GaAs Multi-Quantum Wells grown by MOVPE
A. Hasse, K. Volz, A. K. Schaper, J. Koch, F. Höhnsdorf, W. Stolz
Crystal Research and Technology 35 (6 - 7) (2000), pp. 787 - 792

Optical characterisation of MOVPE-grown Ga_1-xMn_xAs semimagnetic semiconductor layers
Th. Hartmann, M. Lampalzer, W. Stolz, K. Megges, J. Lorberth, P. J. Klar, W. Heimbrodt
Thin Solid Films 364 (1 - 2) (2000), pp. 209 - 212

Investigation of Disordered Semiconductor Quantum Wells by Coherent Excitation Spectroscopy
A. Euteneuer, E. Finger, W. Stolz, T. Meier, P. Thomas, S. W. Koch, M. Hofmann, W. W. Rühle, R. Hey, K. H. Ploog
physica status solidi (a) 178 (1) (2000), pp. 183 - 188

Normal-Mode Linewidths in a Semiconductor Microcavity with Various Cavity Qualities
M. Hofmann, D. Karaiskaj, C. Ellmers, T. Maxisch, F. Jahnke, H.-J. Kolbe, G. Weiser, R. Rettig, S. Leu, W. Stolz, S. W. Koch, W. W. Rühle
physica status solidi (a) 178 (1) (2000), pp. 179 - 181

(GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser with ultrabroad temperature operation range
A. Wagner, C. Ellmers, F. Höhnsdorf, J. Koch, C. Agert, S. Leu, M. Hofmann, W. Stolz, and W. W. Rühle
Appl. Phys. Lett. 76 (3) (2000), pp. 271 - 272

LP-MOVPE growth of carbon doped (InGa)P/GaAs HBT using an all-liquid source configuration
P. Velling, M. Agethen, E. Herenda, W. Prost, W. Stolz, F. J. Tegude
Proc. 26^th Int. Symp. "Compound Semiconductors", Berlin (1999),
Inst. Phys. Conf. Ser. 166 (2000), p. 71

Quantitative topographic assessment of Cu incorporation in GaAs
M. Bäumler, R. Stibal, W. Stolz, Th. Steinegger, M. Jurisch, M. Maier, W. Jantz
Journal of Crystal Growth 210 (1 - 3) (2000), pp. 207 - 211

Alternative N-, P-, As-precursors for III/V-epitaxy
W. Stolz
Journal of Crystal Growth 209 (2 - 3) (2000), pp. 272 - 278

Strain-driven transition from stepped interfaces to regularly spaced macrosteps in (GaIn)As/Ga(PAs) symmetrically strained superlattices
C. Giannini, T. Baumbach, D. Lübbert, R. Felici, L. Tapfer, T. Marschner, W. Stolz, N. Y. Jin-Phillipp and F. Phillipp
Phys. Rev. B 61 (3) (2000), pp. 2173 - 2179

Coherence in real space: the transition range from bulk to confined states studied by the Franz-Keldysh effect
H. J. Kolbe, C. Agert, W. Stolz, G. Weiser
Physica E 6 (1 - 4) (2000), pp. 173 - 176

Optical characterization of (GaIn)(NAs)/GaAs MQW structures
J. Koch, F. Höhnsdorf und W. Stolz
Journal of Electronic Materials 29 (1) (2000), pp. 165 - 168

Effect of MOVPE growth interruptions on the gallium arsenide interior interface morphology
G. Bernatz, S. Nau, R. Rettig und W. Stolz
Journal of Electronic Materials 29 (1) (2000), pp. 129 - 133

Emission Dynamics and Gain of (GaIn)(NAs)/GaAs Lasers
A. Wagner, C. Ellmers, F. Hohnsdorf, J. Koch, S. Leu, W. Stolz, M. Hofmann, W. W. Rühle,
physica status solidi (b) 221 (1) (2000), pp. 567 - 569

100 fs Carrier Dynamics in GaAs under 100 nm Diameter Apertures
J. Hetzler, A. Brunner, M. Wegener, S. Leu, S. Nau, W. Stolz
physica status solidi (b) 221 (1) (2000), pp. 425 - 428

Coherent excitation spectroscopy of disordered quantum-well structures
E. Finger, S. Kraft, A. Euteneuer, M. Hofmann, W. Stolz, W. W. Rühle
physica status solidi (b) 221 (1) (2000), pp. 373 - 378

Composition and structure of SiC_x:H films formed by plasma immersion ion implantation from a methane plasma
K. Volz, Ch. Klatt, W. Ensinger
Mat. Res. Soc. Symp. Proc. 609 (2000), p. 271

Heteroepitaxial growth of 3C-SiC on (100) silicon by C₆₀ and Si molecular beam epitaxy
K. Volz, S. Schreiber, J. W. Gerlach, W. Reiber, B. Rauschenbach, B. Stritzker, W. Assmann and W. Ensinger
Materials Science and Engineering A 289 (1 - 2) (2000), pp. 255 - 264

Nitrogen plasma immersion ion implantation and silicon sputter deposition combined with methane implantation as an in-line process for improving corrosion and wear performance of stainless steels
K. Volz, B. Enders and W. Ensinger
Surface and Coatings Technology 128 - 129 (2000), pp. 479 - 483

Tantalum nitride films formed by ion beam assisted deposition: analysis of the structure in dependence on the ion irradiation intensity
K. Volz, M. Kiuchi and W. Ensinger
Surface and Coatings Technology 128 - 129 (2000), pp. 298 - 302

C-SiC-Si gradient films formed on silicon by ion beam assisted deposition at room temperature
K. Volz, M. Kiuchi, M. Okumura and W. Ensinger
Surface and Coatings Technology 128 - 129 (2000), pp. 274 - 279

Ion-beam assisted deposition of tube inner walls by plasma immersion ion implantation
W. Ensinger and K. Volz
Surface and Coatings Technology 128 - 129 (2000), pp. 270 - 273

Plasma immersion ion implantation of complex-shaped objects: an experimental study on the treatment homogeneity
W. Ensinger, K. Volz and T. Höchbauer
Surface and Coatings Technology 128 - 129 (2000), pp. 265 - 269

Ion beam-assisted deposition of nitrides of the 4th group of transition metals
W. Ensinger, K. Volz and M. Kiuchi
Surface and Coatings Technology 128 - 129 (2000), pp. 81 - 84

Thin film oxides as probe for homogeneity measurements of 3-dimensional objects treated by plasma immersion ion implantation
W. Ensinger and K. Volz
Nucl. Instr. Meth. Phys. Res. B 166 - 167 (2000), pp. 154 - 158

Ammonia plasma immersion ion implantation into silicon: Composition and structure of the resulting silicon-nitrogen-hydrogen system
K. Volz, B. Rauschenbach, C. Klatt and W. Ensinger
Nucl. Instr. Meth. Phys. Res. B 166 - 167 (2000), pp. 75 - 81

1999

Confinement effects in bulk samples derived from the Franz-Keldysh effect
H. J. Kolbe, C. Agert, W. Stolz, and G. Weiser
Phys. Rev. B 59 (23) (1999), pp. 14896 - 14898

Investigation of strain induced patterning in superlattices by grazing incidence diffraction - comparison of morphological and strain ordering
G. T. Baumbach, C. Giannini, D. Lübbert, R. Felici, L. Tapfer, T. Marschner and W. Stolz
Journal of Physics D: Appl. Phys. 32 (10A) (1999), A212 - A215

Optical Spectroscopic Studies of N-Related Bands in Ga(N,As)
H. Grüning, L. Chen, Th. Hartmann, P. J. Klar, W. Heimbrodt, F. Höhnsdorf, J. Koch and W. Stolz
physica status solidi (b) 215 (1) (1999), pp. 39 - 45

Experimental investigation of structures of interior interfaces in GaAs
G. Bernatz, S. Nau, R. Rettig, H. Jänsch, and W. Stolz
J. Appl. Phys. 86 (12) (1999), pp. 6752 - 6757

TBAs and TBP - improved group V sources for MOVPE
W. Stolz and T. Whittaker
Compound Semiconductor 5 (1999), p. 29

Patterned growth of (AlGa)As using metalorganic vapor-phase epitaxy
L. Hofmann, A. Knauer, I. Rechenberg, M. Weyers, W. Stolz
Journal of Crystal Growth 206 (4) (1999), pp. 255 - 262

DBR lasers emitting at 1060 nm with first-order grating in InGaP waveguide layer
L. Hofmann, A. Klehr, A. Knauer, V. B. Smirnitski, W. Stolz
Electronics Letters 35 (11) (1999), pp. 902 - 903

Coherent Excitation Spectroscopy on Inhomogeneous Exciton Ensembles
A. Euteneuer, E. Finger, M. Hofmann, W. Stolz, T. Meier, P. Thomas, S. W. Koch, W. W. Rühle, R. Hey and K. Ploog
Phys. Rev. Lett. 83 (10) (1999), pp. 2073 - 2076

Linewidths in a semiconductor microcavity with variable strength of normal-mode coupling
D. Karaiskaj, T. Maxisch, C. Ellmers, H.-J.Kolbe, G. Weiser, R. Rettig, S. Leu, W. Stolz, M. Hofmann, F. Jahnke, S. W. Koch, and W. W. Rühle
Phys. Rev. B 59 (21) (1999), pp. 13525 - 13527

Magnetoexciton quantum beats: influence of Coulomb correlations
M. Koch, S. T. Cundiff, W. H. Knox, J. Shah, W. Stolz
Solid State Communications 111 (10) (1999), pp. 553 -558

Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelenghts in the range 1.28 - 1.38 µm
F. Höhnsdorf, J. Koch, S. Leu, W. Stolz, B. Borchert, M. Druminski
Electronics Letters 35 (7) (1999), pp. 571 - 572

Ultrafast (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser for the 1.3 µm wavelength regime
C. Ellmers, F. Höhnsdorf, J. Koch, C. Agert, S. Leu, D. Karaiskaj, M. Hofmann, W. Stolz, and W. W. Rühle
Appl. Phys. Lett. 74 (16) (1999), pp. 2271 - 2273

Excitonic wave packets observed in space- and time-resolved pump and probe experiments
R. Otremba, S. Grosse, M. Koch, J. Feldmann, V. M. Axt, T. Kuhn, W. Stolz
Solid State Communications 109 (5) (1999), pp. 317 - 322

Ultrafast nonlinear subwavelength solid immersion spectroscopy at T = 8K
M. Vollmer, H. Giessen, W. Stolz, W. W. Rühle, L. Ghislain, and V. Elings
Appl. Phys. Lett. 74 (13) (1999), pp. 1791 - 1793

Optically pumped (GaIn)As/Ga(PAs) vertical-cavity surface-emitting lasers with optimized dynamics
C. Ellmers, M. R. Hofmann, D. Karaiskaj, S. Leu, W. Stolz, W. W. Rühle, and M. Hilpert
Appl. Phys. Lett. 74 (10) (1999), pp. 1367 - 1369

Ultrafast nonlinear subwavelength solid immersion spectroscopy at T = 8K: an alternative to nonlinear scanning near-field optical microscopy
M. Vollmer, H. Giessen, W. Stolz, W. W. Rühle, A. Knorr, S. W. Koch, L. Ghislain, V. Elings
Journal of Microscopy 194 (2 - 3) (1999), pp. 523 - 527

LP-MOVPE grown GaAs- and InP-based HBTs using all-liquid alternative sources
P. Veiling, M. Agethen, E. Herenda, W. Prost, W. Stolz, F.-J. Tegude
11^th Int. Conf. "Indium Phosphide and Related Materials" (1999), pp. 467 - 470

Structural investigations of silicon carbide films formed by fullerene carbonization of silicon
K. Volz, S. Schreiber, M. Zeitler, B. Rauschenbach, B. Stritzker and W. Ensinger
Surface and Coatings Technology 122 (2 - 3) (1999), pp. 101 - 107

Formation of hafnium nitride films by medium-energy ion-beam-assisted deposition
K. Volz, M. Kiuchi and W. Ensinger
Surface and Coatings Technology 120 - 121 (1999), pp. 353 - 357

Three-dimensional dose uniformity of plasma immersion ion implantation shown with the example of macro-trenches
K. Volz, M. Kiuchi and W. Ensinger
Surface and Coatings Technology 120 - 121 (1999), pp. 347 - 352

An apparatus for in-situ or sequential plasma immersion ion beam treatment in combination with r. f. sputter deposition or triode d. c. sputter deposition
W. Ensinger, K. Volz and B. Enders
Surface and Coatings Technology 120 - 121 (1999), pp. 343 - 346

Synthesis of buried silicon oxide layers by water plasma immersion ion implantation
I. Großhans, K. Volz, W. Ensinger and B. Rauschenbach
Nucl. Instr. Meth. Phys. Res. B 155 (1 - 2) (1999), pp. 67 - 74

Low-energy ion assisted deposition of epitaxial gallium nitride films
J. W. Gerlach, D. Schrupp, K. Volz, M. Zeitler, B. Rauschenbach and A. Anders
Nucl. Instr. Meth. Phys. Res. B 148 (1 - 4) (1999), p. 406 - 410

Influence of substrate temperature on damage buildup and removal of ion implanted gallium nitride
C. Liu, A. Wenzel, K. Volz and B. Rauschenbach
Nucl. Instr. Meth. Phys. Res. B 148 (1 - 4) (1999), pp. 396 - 400

Formation of crystalline SiC films by CH₄ plasma immersion ion implantation into Si
K. Volz, B. Rauschenbach, B. Stritzker and W. Ensinger
Nucl. Instr. Meth. Phys. Res. B 148 (1 - 4) (1999), pp. 540 - 544

1998

GaAs-based VCSEL-structures with strain-compensated (GaIn)As/Ga(PAs)-MQWH active regions grown by using TBAs and TBP
C. Ellmers, S. Leu, R. Rettig, M. Hofmann, W. W. Rühle, W. Stolz
Journal of Crystal Growth 195 (1 - 4) (1998), pp. 630 - 636

Investigations of (GaIn)(NAs) bulk layers and (GaIn)(NAs)/GaAs multiple quantum well structures grown using tertiarybutylarsine (TBAs) and 1,1-dimethylhydrazine (UDMHy)
F. Höhnsdorf, J. Koch, C. Agert, W. Stolz
Journal of Crystal Growth 195 (1 - 4) (1998), pp. 391 - 396

C- and O-incorporation in (AlGa)As epitaxial layers grown by MOVPE using TBAs
S. Leu, F. Höhnsdorf, W. Stolz, R. Becker, A. Salzmann, A. Greiling
Journal of Crystal Growth 195 (1 - 4) (1998), pp. 98 - 104

Si-doping of MOVPE grown InP and GaAs by using the liquid Si source ditertiarybutyl silane
S. Leu, H. Protzmann, F. Höhnsdorf, W. Stolz, F. Steinkirchner, E. Hufgard
Journal of Crystal Growth 195 (1 - 4) (1998), pp. 91 - 97

Growth of Ru doped semi-insulating InP by low pressure metalorganic chemical vapor deposition
A. Dadgar, O. Stenzel, L. Köhne, A. Näser, M. Straßburg, W. Stolz, D. Bimberg, H. Schumann
Journal of Crystal Growth 195 (1 - 4) (1998), pp. 69 - 73

X-ray diffraction study of intentionally disordered (GaIn)As/Ga(PAs) heterostructures
R. Rettig, T. Marschner, W. Stolz, and L. Tapfer
J. Appl. Phys. 84 (1) (1998), pp. 237 - 247

Atomic scale properties of interior interfaces of semiconductor heterostructures as detemined by quasi-digital highly selective etching and atomic force microscopy
R. Rettig, W. Stolz
Physica E 2 (1- 4) (1998), pp. 277 - 281

Coherent Excitation of Magnetoexciton Wavepackets
S. T. Cundiff, M. Koch, J. Shah, W. H. Knox, W. Stolz
physica status solidi (b) 206 (1) (1998), pp. 77 - 85

Structural investigations of chromium nitride films formed by ion beam-assisted deposition
K. Volz, M. Kiuchi and W. Ensinger
Surface and Coatings Technology 108 - 109 (1998), pp. 303 - 307

Microscopy of SiC Layers Grown by C₆₀ Deposition on Si (100)
R. Scholz, U. Gösele, K. Volz and B. Rauschenbach
Jpn. J. Appl. Phys. 37 (11) (1998), pp. 6090 - 6093

Microstructure and composition of titanium nitride formed by ion beam enhanced nitrogen sorption of evaporated titanium under argon ion irradiation
W. Ensinger and K. Volz
Materials Science and Engineering A 253 (1 - 2) (1998), pp. 234 - 239

Ion implantation in GaN at liquid-nitrogen temperature: Structural characteristics and amorphization
C. Liu, B. Mensching, M. Zeitler, K. Volz, and B. Rauschenbach
Phys. Rev. B 57 (4) (1998), pp. 2530 - 2535

Structural investigations of titanium nitride films formed by plasma immersion ion implantation
K. Volz, W. Ensinger, B. Stritzker and B. Rauschenbach
Surface and Coatings Technology 103 - 104 (1998), pp. 257 - 261

Formation of silicon carbide and amorphous carbon films by pulse biasing silicon to a high voltage in a methane electron cyclotron resonance microwave plasma
K. Volz, W. Ensinger, W. Reiber, B. Rauschenbach and B. Stritzker
Journal of Materials Research 13 (7) (1998), p. 1765 - 1768

Formation of silicon carbide and nitride by ECR microwave plasma immersion ion implantation
K. Volz, W. Ensinger, B. Rauschenbach and B. Stritzker
Nucl. Instr. Meth. Phys. Res. B 141 (1 - 4) (1998), pp. 663 - 669

Formation of silicon nitride layers by nitrogen ion irradiation of silicon biased to a high voltage in an electron cyclotron resonance microwave plasma
W. Ensinger, K. Volz, G. Schrag, B. Stritzker, and B. Rauschenbach
Appl. Phys. Lett. 72 (10) (1998), 1164

Synthesis of epitaxial 3C-SiC by C₆₀ carbonization of silicon on sapphire
K. Volz, J. Müller, W. Reiber, B. Rauschenbach and B. Stritzker
Carbon 36 (5 - 6) (1998), pp. 817 - 820

Composition and microstructure of titanium nitride formed on Ti6Al4V by nitrogen plasma immersion ion implantation
M. Rinner, K. Volz, W. Ensinger, W. Assmann and B. Rauschenbach
Surface and Coatings Technology 100 - 101 (1998), pp. 366 - 371

1997

Relaxation Dynamics of Electron-Hole Pairs Studied by Spatiotemporal Pump and Probe Experiments
S. Grosse, R. Arnold, G. von Plessen, M. Koch, J. Feldmann, V. M. Axt, T. Kuhn, R. Rettig, W. Stolz
physica status solidi (b) 204 (1) (1997), pp. 147 - 150

Biexcitonic binding energies in the transition regime from three- to two-dimensional semiconductors
A. Euteneuer, J. Möbius, R. Rettig, E. J. Mayer, M. Hofmann, W. Stolz, E. O. Göbel, and W. W. Rühle
Phys. Rev. B 56 (16) (1997), R10028 - R10031

Diffuse X-ray reflection from multilayers with stepped interfaces
V. Holý, C. Giannini, L. Tapfer, T. Marschner, W. Stolz
Phys. Rev. B 55 (15) (1997), pp. 9960 - 9968
Erratum: Phys. Rev. B 56 (15) (1997), p. 9975

Thickness modulation in symmetrically strained III-V semiconductor superlattices grown by MOVPE
N. Y. Jin-Phillipp, F. Phillipp, T. Marschner, W. Stolz
Journal of Materials Science: Materials in Electronics 8 (5) (1997), pp. 289 - 299

Confinement Dependence of Biexcitonic Binding Energies in Semiconductor Quantum Wells
A. Euteneuer, J. Möbius, R. Rettig, M. Hofmann, E. J. Mayer, W. Stolz, E. O. Göbel, W. W. Rühle
physica status solidi (a) 164 (1) (1997), pp. 253 - 258

Structural characteristics of highly ordered (GaIn)P
J. Jiang, A. K. Schaper, Z. Spika, W. Stolz, P. Werner, and L. Tóth
Conference "Microscopy of Semiconducting Materials", Oxford (1997),
Inst. Phys. Conf. Ser. 157 (1997), pp. 261 - 264

Effects of Coulomb interaction in intentionally disordered semiconductor superlattices
G. Richter, W. Stolz, P. Thomas, S. W. Koch, K. Maschke, I. P. Zvyagin
Superlattices and Microstructures 22 (4) (1997), pp. 475 - 480

Structural ordering and interface morphology in symmetrically strained (GaIn)As/Ga(PAs) superlattices grown on off-oriented GaAs(100)
C. Giannini, L. Tapfer, Y. Zhuang, L. DeCaro, T. Marschner and W. Stolz
Phys. Rev. B 55 (8) (1997), pp. 5276 - 5283

Growth and structural properties of ^(GaIn)As/_Ga(PAs) intentionally disordered superlattice structures grown by metalorganic vapor phase epitaxy
R. Rettig, T. Marschner, L. Tapfer, W. Stolz, E. O. Göbel
Journal of Crystal Growth 170 (1 - 4) (1997), pp. 748 - 751

Correlation of ordering formation and surface structure in (GaIn)P using modulated MOVPE
Z. Spika, C. Zimprich, W. Stolz, E. O. Göbel, J. Jiang, A. Schaper, P. Werner
Journal of Crystal Growth 170 (1 - 4) (1997), pp. 257 - 262

Properties of (Ga_0.47In_0.53)As epitaxial layers grown by metalorganic vapor phase epitaxy (MOVPE) using alternative arsenic precursors
H. Protzmann, F. Höhnsdorf, Z. Spika, W. Stolz, E. O. Göbel, M. Müller, J. Lorberth
Journal of Crystal Growth 170 (1 - 4) (1997), pp. 155 - 160

Lateral periodicity in highly-strained (GaIn)As/Ga(PAs) superlattices investigated by X-ray scattering techniques
Y. Zhuang, C. Giannini, L. Tapfer, T. Marschner, W. Stolz,
Nuovo Cimento della Societa Italiana di Fisica D 19 (2 - 4) (1997), pp. 377 - 383

Lattice expansion of Ca and Ar ion implanted GaN
C. Liu, B. Mensching, K. Volz, and B. Rauschenbach
Appl. Phys. Lett. 71 (16) (1997), 2313

Electron microscopy of SiC layers produced by fullerene carbonization of silicon
J. Müller, K. Volz, R. Scholz, B. Stritzker, B. Rauschenbach
European Journal of Cell Biology 74: 126-126 Suppl. 45 (1997)

Formation of Buried SiC Layers in Silicon by Ion Beam Synthesis
K. Volz, J. K. N. Lindner and B. Stritzker
Materials Science Forum 248 - 249 (1997), pp. 237 - 240

Ion Beam Induced Epitaxial Crystallization of Buried SiC Layers in Silicon
J. K. N. Lindner, K. Volz and B. Stritzker
Materials Science Forum 248 - 249 (1997), pp. 73 - 78

Ion beam modification of Si/SiC/Si layer systems
K. Volz, J. K. N. Lindner and B. Stritzker
Nucl. Instr. Meth. Phys. Res. B 127 - 128 (1997), pp. 355 - 359

1996

Spectrally resolved four-wave mixing experiments on bulk GaAs with 14-fs pulses
M. U. Wehner, D. Steinbach, M. Wegener, T. Marschner, and W. Stolz
J. Opt. Soc. Am. B 13 (5) (1996), pp. 977 - 980

Non-Markovian Relaxation in GaAs: Four-Wave Mixing Experiments Using 15 fs Pulses
M. Wegener, M. U. Wehner, D. Steinbach, L. Bányai, D. B. Tran-Thoai, E. Reitsamer, H. Haug & W. Stolz
Proc. 23^rd Int. Conf. "Physics of Semiconductors", Berlin (1996)
Eds. M. Scheffler and R. Zimmermann, World Scientific (Singapore 1996), pp. 633 - 640

Structural and Electronic Properties of Ordered (GaIn)P
Z. Spika, J. Jiang, C. Zimprich, P. Großmann, A. Schaper, W. Stolz, E. O. Göbel, P. Werner & J. Feldmann
Proc. 23^rd Int. Conf. "Physics of Semiconductors", Berlin (1996)
Eds. M. Scheffler and R. Zimmermann, World Scientific (Singapore 1996), pp. 465 - 468

Optical Coherence in Semiconductors: Strong Emission Mediated by Nondegenerate Interactions
S. T. Cundiff, M. Koch, W. H. Knox, J. Shah, and W. Stolz
Phys. Rev. Lett. 77 (6) (1996), pp. 1107 - 1110

Disorder mediated biexcitonic beats in semiconductor quantum wells
T. F. Albrecht, K. Bott, T. Meier, A. Schulze, M. Koch, S. T. Cundiff, J. Feldmann, W. Stolz, P. Thomas, S. W. Koch, and E. O. Göbel
Phys. Rev. B 54 (7) (1996), pp. 4436 - 4439

Investigations of the strutural stability of highly strained [(Al)GaIn]As/Ga(PAs) multiple quantum wells
T. Marschner, S. Lutgen, M. Volk, W. Stolz, and E. O. Göbel
Appl. Phys. Lett. 69 (15) (1996), pp. 2249 - 2251

Optical bistability in symmetrically strained (GaIn)As/Ga(PAs) superlattices
G. Bastian, G. von Plessen, J. Feldmann, J. Hader, T. Marschner, W. Stolz, and E. O. Göbel
Appl. Phys. Lett. 69 (3) (1996), pp. 308 - 310

Metalorganic vapor phase epitaxy of InP using the novel P-source ditertiarybutyl phosphine (DitBuPH)
H. Protzmann, Z. Spika, B. Spill, G. Zimmermann, W. Stolz, E. O. Göbel, P. Gimmnich und J. Lorberth
Journal of Electronic Materials 25 (3) (1996), pp. 443 - 448

New Developments of Less Toxic Group-V Precursors for the Metalorganic Vapour Phase Epitaxy of III-V-Semiconductors: In-Situ-Formation of As-H Functions by Thermal ß-Elimination of Specific As-Trialkyl Compounds
G. Zimmermann, Z. Spika, T. Marschner, W. Stolz, E. O. Göbel, P. Gimmnich, R. Becker, J. Lorberth, A. Greiling and A. Salzmann
Jpn. J. Appl. Phys. 35 (4A) (1996), pp. 2035 - 2042

Transmission electron microscopy study on defect reduction in GaAs on Si heteroepitaxial layers grown by metalorganic vapor phase epitaxy
N. Y. Jin-Phillipp, F. Phillipp, T. Marschner, W. Stolz, E. O. Göbel
Journal of Crystal Growth 158 (1 - 2) (1996), pp. 28 - 36

Strain induced self organized growth of lateral periodic strained layer superlattices on off-oriented substrates by metalorganic vapour phase epitaxy
T. Marschner, L. Tapfer, N. Y. Jin-Phillipp, F. Phillipp, S. Lutgen, M. Volk, W. Stolz, E. O. Göbel
Solid-State Electronics 40 (1 - 8) (1996), pp. 819 - 823

Magnetooptical investigations of symmetrically strained (GaIn)As/Ga(PAs) multiple quantum well structures
M. Volk, S. Lutgen, T. Marschner, W. Stolz, E. O. Göbel, P. C. M. Christiansen, J. C. Maan
Solid-State Electronics 40 (1 - 8) (1996), pp. 585 - 589

Ion beam induced amorphization and recrystallization of Si/SiC/Si layer systems
K. Volz, J. K. N. Lindner and B. Stritzker
Nucl. Instr. Meth. Phys. Res. B 120 (1 - 4) (1996), pp. 133 - 138

Formation of buried epitaxial silicon carbide layers in silicon by ion beam synthesis
J. K. N. Lindner, K. Volz, U. Preckwinkel, B. Götz, A. Frohnwieser, B. Rauschenbach and B. Stritzker
Materials Chemistry and Physics 46 (2 - 3) (1996), pp. 147 - 155

Buried epitaxial layers of 3C-SiC in Si (100) and Si (111) by ion beam synthesis: A structural characterization
J. K. N. Lindner, K. Volz, and B. Stritzker
Inst. Phys. Conf. Ser. 142 Chapter 1 (1996), pp. 145 - 148

SiC Precipitate Formation during high Dose Carbon Implantation into Silicon
J. K. N. Lindner, K. Volz, and B. Stritzker
Mat. Res. Soc. Symp. Proc. 438 (1996), pp. 289 - 294

1995

Near-field optical characterization of the photoluminescence from partially ordered (GaIn)P
M. J. Gregor, P. G. Blome, R. G. Ulbrich, P. Grossmann, S. Grosse, J. Feldmann, W. Stolz, E. O. Göbel, D. J. Arent, M. Bode, K. A. Bertness, and J. M. Olson
Appl. Phys. Lett. 67 (24) (1995), pp. 3572 - 3574

Exciton-LO-Phonon Quantum Kinetics: Evidence of Memory Effects in Bulk GaAs
L. Banyai, D. B. Tran Thoai, E. Reitsamer, H. Haug, D. Steinbach, M. U. Wehner, M. Wegener, T. Marschner and W. Stolz
Phys. Rev. Lett. 75 (11) (1995), pp. 2188 - 2191

Carrier effective masses in symmetrically strained (GaIn)As/Ga(PAs) multiple-quantum-well structures
M. Volk, S. Lutgen, T. Marschner, W. Stolz, E. O. Göbel, P. C. M. Christiansen and J. C. Maan
Phys. Rev. B 52 (15) (1995), pp. 11096 - 11104

Structural investigations of the direct growth of AlGaAs/GaAs quantum wire structures by MOVPE
W. Stolz
Proc. of the NATO Adv. Res. Workshop "Low Dimensional Structures Prepared by Growth or Regrowth on Patterned Substrates",
Eds. K. Eberl, P. M. Petroff and P. Demeester, Ringberg in Rottach-Egern (1995), Kluwer Academic Publishers, Dordrecht (1995), ISBN 0-7923-3679-8
NATO ASI Series E 298 (1995), pp. 301 - 312

Design and application of a femtosecond optical parametric oscillator for time-resolved spectroscopy of semiconductor heterostructures
T. F. Albrecht, J. H. H. Sandmann, J. Feldmann, W. Stolz, E. O. Göbel, H. Hillmer, R. Lösch und W. Schlapp
Appl. Phys. B 60 (5) (1995), pp. 459 - 467

Atomic incorporation efficiencies for strained ^(GaIn)As/_Ga(PAs) superlattice structures grown by metalorganic vapour phase epitaxy
S. Lutgen, T. Marschner, W. Stolz, E. O. Göbel, L. Tapfer
Journal of Crystal Growth 152 (1 - 2) (1995), pp. 1 - 13

Investigations on deep traps in GaAs and (Al_xGa_1-x)As bulk layers grown by metalorganic vapour-phase epitaxy using the new alternative arsenic precursor diethyl-tert-butylarsin
Z. Spika, G. Zimmermann, W. Stolz, E. O. Göbel, P. Gimmnich, J. Lorberth, A. Greiling, A. Salzmann, S. Weiß, U. Sudjadi, A. Bock, R. Kassing
Journal of Crystal Growth 146 (1 - 4) (1995), pp. 521 - 526

1994

Determination of excitonic binding energies in symmetrically strained (GaIn)As/Ga(AsP) multiple quantum wells using quantum beat spectroscopy
M. Koch, M. Volk, T. Meier, J. Feldmann, W. Stolz, P. Thomas, E. O. Göbel
Superlattices and Microstructures 15 (3) (1994), pp. 329 - 332

Strain-induced changes in epitaxial layer morphology of highly-strained III/V-semiconductor heterostructures
T. Marschner, S. Lutgen, M. Volk, W. Stolz, E. O. Göbel, N. Y. Jin-Phillipp, F. Phillipp
Superlattices and Microstructures 15 (2) (1994), pp. 183 - 186

Coherent dynamics of exciton wavepackets in semiconductor and heterostructures
J. Feldmann, M. Koch, E. O. Göbel, F. Jahnke, T. Meier, W. Schäfer, P. Thomas, S. W. Koch, H. Nickel, S. Luttgen and W. Stolz
Semiconductor Science and Technology 9 (1994), pp. 1965 - 1971

Rabi Flopping in Semiconductors
S. T. Cundiff, A. Knorr, B. Spill, J. Feldmann, W. Stolz, S. W. Koch, E. O. Göbel, H. Nickel
Proc. 9^th Int. Conf. "Ultrafast Phenomena", Dana Point (1994),
Ed. P. F. Barbara, Springer (1994), ISBN 3540584552

GaAs substrate pretreatment and metalorganic vapour phase epitaxy of GaAs, AlAs and (AlGa)As using ß-eliminating trialkyl-As precursors
G. Zimmermann, Z. Spika, T. Marschner, B. Spill, W. Stolz, E. O. Göbel, P. Gimmnich, J. Lorberth, A. Greiling, A. Salzmann
Journal of Crystal Growth 145 (1 - 4) (1994), pp. 512 - 519

Excitonic and free-carrier polarizations of bulk GaAs studied by femtosecond coherent spectroscopy
A. Leitenstorfer, A. Lohner, K. Rick, P. Leisching, T. Elsaesser, T. Kuhn, F. Rossi, W. Stolz and K. Ploog
Phys. Rev. B 49 (23) (1994), pp. 16372 - 16380

Metalorganic vapor-phase epitaxy of III/V-semiconductors using alternative metalorganic-group-V-compounds decomposing under in-situ formation of group-V-H-functions
G. Zimmermann, Z. Spika, W. Stolz, E. O. Göbel, P. Gimmnich, J. Lorberth, A. Greiling, A. Salzmann
Proc. 20^th Int. Symp. "GaAs and Related Compounds", Freiburg (1993),
Inst. Phys. Conf. Ser. 136 (1994), pp. 613 - 618

Femtosecond degenerate four-wave-mixing on unstrained (InGa)As/InP multiple-quantum-wells using an optical parametric oscillator
T. F. Albrecht, J. H. H. Sandmann, S. T. Cundiff, J. Feldmann, W. Stolz, E. O. Göbel
Solid-State Electronics 37 (4 - 6) (1994), pp. 1327 - 1331

Optical properties of symmetrically strained (GaIn)As/Ga(PAs) superlattices grown by metalorganic vapour phase epitaxy
S. Lutgen, T. F. Albrecht, T. Marschner, W. Stolz, E. O. Göbel
Solid-State Electronics 37 (4 - 6) (1994), p. 905 - 909

Direct epitaxial growth of (AlGa)As/GaAs quantum wires by orientation-dependent metalorganic vapour phase epitaxy
D. Bertram, B. Spill, W. Stolz, E. O. Göbel
Solid-State Electronics 37 (4 - 6) (1994), pp. 591 - 596

1993

Coherent excitonic and free carrier dynamics in bulk GaAs and heterostructures
T. Kuhn, E. Binder, F. Rossi, A. Lohner, K. Rick, P. Leisching, A. Leitenstorfer, T. Elsaesser, W. Stolz
Proc. of the NATO Adv. Res. Workshop "Coherent optical interactions in semiconductors",
Ed. R. T. Phillips, Cambridge (1993), Plenum Publishing Corporation (1994), ISBN 0-306-44737-1
NATO ASI Series B 330 (1994)

Improvements in the heteroepitaxial growth of GaAs on Si by MOVPE
T. Marschner, W. Stolz, E. O. Göbel, F. Phillipp, M. Müller, J. Lorberth
Materials Science and Engineering B 21 (2 - 3) (1993), pp. 266 - 269

Metal-organic vapour-phase epitaxial growth of symmetrically strained (GaIn)As/Ga(PAs) superlattices
S. Lutgen, T. Marschner, T. F. Albrecht, W. Stolz, E. O. Göbel, L. Tapfer
Materials Science and Engineering B 21 (2 - 3) (1993), pp. 249 - 252

Direct growth of (AlGa)As/GaAs quantum wires by metalorganic vapour phase epitaxy
D. Bertram, W. Stolz, E. O. Göbel
Journal of Crystal Growth 132 (1 - 2) (1993), pp. 179 - 180

Transient four-wave mixing on (InGa)As/InP multiple quantum wells using a femtosecond optical parametric oscillator
T. F. Albrecht, J. H. H. Sandmann, J. Feldmann, W. Stolz, E. O. Göbel, A. Nebel, C. Fallnich, and R. Beigang
Appl. Phys. Lett. 63 (14) (1993), pp. 1945 - 1947

Coherent excitonic and free-carrier polarizations of bulk GaAs studied by femtosecond photon-echo spectroscopy
A. Lohner, K. Rick. P. Leisching, A. Leitenstorfer, T. Elsässer, T. Kuhn, F. Rossi, and W. Stolz
Proc. 8^th Int. Conf. "Hot Carriers in Semiconductors", Oxford (1993) in
Semiconductor Science and Technology 9 (5S) (1994), pp. 425 - 428

Coherent optical polarization of bulk GaAs studied by femtosecond photon-echo spectroscopy
A. Lohner, K. Rick, P. Leisching, A. Leitenstorfer, T. Elsässer, T. Kuhn, F. Rossi, and W. Stolz
Phys. Rev. Lett. 71 (1) (1993), pp. 77 - 80

Amino-arsine and -phosphine compounds for the MOVPE of III-V semiconductors
G. Zimmermann, H. Protzmann, T. Marschner, O. Zsebök, W. Stolz, E. O. Göbel, P. Gimmnich, J. Lorberth, T. Filz, P. Kurpas, W. Richter
Journal of Crystal Growth 129 (1 - 2) (1993), pp. 37 - 44

New group III aluminium and gallium hydride precursors for metal-organic vapour-phase epitaxy
R. Dorn, M. Müller, J. Lorberth, G. Zimmermann, H. Protzmann, W. Stolz, E. O. Göbel
Materials Science and Engineering B 17 (1 - 3) (1993), pp. 25 - 28

New alternative arsenic precursors for the metal-organic vapour-phase epitaxy of III-V semiconductors: in-situ formation of As-H functionality by ß elimination of specific metal-organic arsenic compounds
P. Gimmnich, A. Greiling, J. Lorberth, C. Thalmann, K. Rademann, G. Zimmermann, H. Protzmann, W. Stolz, E. O. Göbel
Materials Science and Engineering B 17 (1 - 3) (1993), pp. 21 - 24

1992

Synthesis of Gallane-Amine adducts as potential precursors for GaAs and (AlGa)As MOVPE processes and the crystal structure of the {gallane 1,3-bis(dimethylamino)propane} adduct H₃Ga N(CH₃)₂(CH₂)₃N(CH₃)₂
J. Lorberth, R. Dorn, S. Wocadlo, W. Massa, E. O. Göbel, T. Marschner, H. Protzmann, O. Zsebök, W. Stolz
Advanced Materials 4 (9) (1992), pp. 576 - 579

In-situ formation of As-H functions by ß-elimination of specific metalorganic arsenic compounds for the MOVPE of III/V semiconductors
G. Zimmermann, H. Protzmann, W. Stolz, E. O. Göbel, P. Gimmnich, A. Greiling, J. Lorberth, C. Thalmann, K. Rademann
Journal of Crystal Growth 124 (1 - 4) (1992), pp. 136 - 141

Metalorganic vapour phase epitaxy (MOVPE) of III/V-semiconductor heterostructures using alternative precursor molecules: new developments
W. Stolz
Proc. 12^th General Conf. of the Condensed Matter Division of the European Physical Society, Prag (1992),
Physica Scripta T 45 (1992), pp. 186 - 191

Transient-grating experiments for the study of electron-hole separation in an electric field
J. Feldmann, P. Grossmann, W. Stolz, E. O. Göbel, and K. Ploog
Semiconductor Science and Technology 7 (3B) (1992), pp. B130 - B132

1991

Transient photoconductivity in amorphous Si_1-xC_x:H
A. Pohlmann, R. Fischer, R. Brüggemann, W. Stolz, E. O. Göbel
Journal of Non-Crystalline Solids 137 - 138 (1) (1991), pp. 547 - 550

Group III hydride precursors for the metalorganic vapour phase epitaxy (MOVPE) of (AlGa)As/GaAs heterostructures
H. Protzmann, T. Marschner, O. Zsebök, W. Stolz, E. O. Göbel, R. Dorn, J. Lorberth
Journal of Crystal Growth 115 (1 - 4) (1991), pp. 248 - 253

Halbleitmaterialien und -strukturen für die Optoelektronik und Photonik
E. O. Göbel, W. Elsäßer, W. Stolz
in "Halbleiter in Forschung und Technik: Grundlagen, Anwendungen und Perspektiven",
Hrsg. J. Werner, J. Weber, W. Rühle,
Expert Verlag Ehningen (1991), ISBN 3-8169-0707-5, p. 142

Dynamics and spectral characteristics of exciton bleaching in type-II Al_xGa_1-xAs/AlAs superlattices
J. Feldmann, E. Göbel, W. Stolz, K. Ploog, P. Dawson, C. T. Foxon
Superlattices and Microstructures 9 (2) (1991), pp. 241 - 244

Optical study of electronic states of In_0.53Ga_0.47As/In_0.52Al_0.48As quantum wells in high electric fields
K. Satzke, G. Weiser, W. Stolz, and K. Ploog
Phys. Rev. B 43 (3) (1991), pp. 2263 - 2271

Strain relaxation and influence of residual strain in GaAs and (AlGa)As/GaAs heterostructures grown on (100) Si by molecular beam epitaxy
W. Stolz, K. Nozawa, Y Horikoshi, L. Tapfer, K. Ploog
Proc. of the NATO Adv. Res. Workshop "Condensed Systems of Low Dimensionality",
Eds. J. L. Beeby, P. K. Bhattacharya, P. Ch. Gravelle, F. Koch, D. J. Lockwood, Marmaris (1990), Plenum Publishing Corporation (1991), ISBN 0-306-43887-9
NATO ASI Series B 253 (1991)

1990

Alternative precursors for the growth of (AlGa)As/GaAs modulation-doped heterostructures by metalorganic vapor-phase epitaxy
W. Stolz, H. Protzmann, E. Göbel, M. Hostalek, L. Pohl
Proc. 17^th Int. Symp. "GaAs and Related Compounds", Jersey (1990)
Inst. Phys. Conf. Ser. 112 (1990), pp. 155 - 160

Transient Reshaping of intersubband absorption spectra in a ternary multiple quantum well structure
R. J. Bäuerle, T. Elsässer, H. Lobentanzer, W. Stolz, K. Ploog
Proc. 20^th Int. Conf. "Physics of Semiconductors", Thessaloniki (1990),
Eds. E. M. Anastassakis, J. D. Joannopoulos, World Scientific Publishing (1990)

Absorption and electroabsorption spectra of (GaIn)As/(AlIn)As quantum wells and superlattices
K. Satzke, W. Stolz, G. Weiser
Proc. IEEE Conf. "Modulation Spectroscopy" (1990)

Influence of GaAs buffer layer growth and annealing conditions on the quality of GaAs/AlAs superlattices grown on (100) Si by molecular beam epitaxy
W. Stolz, G. E. Crook, L. Tapfer, K. Ploog
Proc. 1^st Int. Conf. "Epitaxial Crystal Growth", Budapest (1990)
Ed. E. Lendvay, Trans Tech Publications Ltd. (1991), ISBN-10: 0878496165

Transient intersubband absorption spectra of hot electrons in a modulation-doped (GaIn)As/(AlIn)As multiple quantum well structure
R. J. Bäuerle, T. Elsässer, H. Lobentanzer, W. Stolz, K. Ploog
Proc. 20^th Int. Conf. "Quantum Electronics"

Radiative recombination processes and fermi edge singularity in modulation doped n-type GaInAs/AlInAs multiple quantum wells
R. Cingolani, W. Stolz, Y. H. Zhang, K. Ploog
Journal of Luminescence 46 (2) (1990), pp. 147 - 154

Dopant incorporation in delta-doped GaAs layers studied by local vibrational-mode spectroscopy
W. Stolz, M. Hauser, K. Ploog, M. Ramsteiner, J. Wagner
Proc. Int. Symp. "Gallium Arsenide and Related Compounds", Bristol (1989)
Inst. Phys. Conf. Ser. 106 (1990), pp. 465 - 470

1989

Transient reshaping of intersubband absorption spectra due to hot electrons in a modulation-doped multiple-quantum-well structure
R. J. Bäuerle, T. Elsässer, H. Lobentanzer, W. Stolz, and K. Ploog
Phys. Rev. B 40 (14) (1989), pp. 10002 - 10005

Influence of interface quality on structural and optical properties of Ga_xIn_1-xAs/Al_yIn_1-yAs superlattices lattice matched to (001) InP
L. Tapfer, W. Stolz, and K. Ploog
J. Appl. Phys. 66 (7) (1989), pp. 3217 - 3219

Hot carriers in (GaIn)As/(AlIn)As multiple quantum well structures studied by picoseceond infrared spectroscopy
T. Elsässer, R. J. Bäuerle, W. Kaiser, H. Lobentanzer, W. Stolz, K. Ploog
Conf. "Quantum Electronics and Laser Science", Techn. Digest Ser. 12, Optical Society of America, Washington (1989), p. 142

Screening of the n=2 excitonic resonance by hot carriers in an undoped Ga_0.47In_0.53As/Al_0.48In_0.52As multiple quantum well structure
H. Lobentanzer, W. Stolz, K. Ploog, R. J. Bäuerle, T. Elsässer
Solid-State Electronics 32 (12) (1989), pp. 1875 - 1879

Transient intersubband absorption spectra of hot electrons in a modulation-doped multiple-quantum-well structure
T. Elsässer, R. J. Bäuerle, W. Kaiser, H. Lobentanzer, W. Stolz, K. Ploog
Solid-State Electronics 32 (12) (1989), pp. 1707 - 1711

Incorporation of Si in δ-doped GaAs studied by local vibrational mode spectroscopy
J. Wagner, M. Ramsteiner, W. Stolz, M. Hauser, and K. Ploog
Appl. Phys. Lett. 55 (10) (1989), pp. 978 - 980

Electronic states and optical transitions in modulation-doped n-type Ga_xIn_1-xAs/Al_xIn_1-xAs multiple quantum wells
R. Cingolani, W. Stolz, and K. Ploog
Phys. Rev. B 40 (5) (1989), pp. 2950 - 2955

Infrared stimulated emission in modulation doped Ga_0.47In_0.53As/Al_0.48In_0.52As quantum wells
R. Cingolani, W. Stolz, K. Ploog, M. Ferrera, C. Moro
Solid State Communications 72 (8) (1989), pp. 807 - 811

Transient absorption spectra of a modulation-doped Ga_0.47In_0.53As/Al_0.48In_0.52As multiple quantum well structure measured by picosecond infrared pulses
T. Elsässer, R. J. Bäuerle, W. Kaiser, H. Lobentanzer, W. Stolz, and K. Ploog
Appl. Phys. Lett 54 (3) (1989), pp. 256 - 258

Cooling of hot carriers in three- and two-dimensional Ga_0.47In_0.53As
H. Lobentanzer, W. Stolz, J. Nagle, and K. Ploog
Phys. Rev. B 39 (8) (1989), pp. 5234 - 5244

Optimized growth start and controlled formation of misfit dislocations for heteroepitaxial GaAs on (100) Si grown by migration-enhanced epitaxy
W. Stolz, Y. Horikoshi, M. Naganuma, K. Nozawa
Journal of Crystal Growth 95 (1 - 4) (1989), pp. 87 - 90

1988

Picosecond infrared spectroscopy of hot carriers in a modulation-doped (GaIn)As/(AlIn)As multiple quantum well structure
T. Elsässer, R. J. Bäuerle, W. Kaiser, H. Lobentanzer, W. Stolz, K. Ploog
Proc. 19^th Int. Conf. "Physics of Semiconductors", Warsaw (1988), Ed. W. Zawadzki, p. 227

Picosecond infrared spectroscopy of hot carriers in a (GaIn)As multiple quantum well structure
T. Elsässer, R. J. Bäuerle, W. Kaiser, H. Lobentanzer, W. Stolz, K. Ploog
Proc. 16^th Int. Conf. "Quantum Electronics", Tokyo (1988), p. 388

Carrier cooling in modulation-doped (GaIn)As/(AlIn)As multiple quantum well structures
H. Lobentanzer, W. Stolz, J. Nagle, K. Ploog
Proc. 16^th Int. Conf. "Quantum Electronics", Tokyo (1988)

Saturation and blue shift of the exciton resonance in a thin (GaIn)As/(AlIn)As multiple quantum well structure
H. Lobentanzer, W. Stolz, K. Ploog
Proc. 16^th Int. Conf. "Quantum Electronics", Tokyo (1988)

Cooling of hot carriers in three- and two-dimensional (GaIn)As
H. Lobentanzer, W. Stolz, K. Ploog
Proc. 6^th Int. Conf. "Ultrafast Phenomena", Kyoto (1988), Eds. T. Yajima, K. Yoshihara, C. B. Harris, S. Shionoya,
Springer-Series in Chemical Physics Bd. 48 Berlin (1988)

Intersubband absorption in a modulation-doped Ga_0.47In_0.53As/Al_0.48In_0.52As multiple quantum well structure
H. Lobentanzer, W. König, W. Stolz, K. Ploog, T. Elsässer, and R. J. Bäuerle
Appl. Phys. Lett. 53 (7) (1988), pp. 571 - 573

Picosecond infrared spectroscopy of hot carriers in a modulation-doped Ga_0.47In_0.53As multiple-quantum-well structure
R. J. Bäuerle, T. Elsässer, W. Kaiser, H. Lobentanzer, W. Stolz, and K. Ploog
Phys. Rev. B 38 (6) (1988), pp. 4307 - 4310

Strain-released heteroexpitaxy of GaAs on (100) Si by migration enhanced epitaxy
W. Stolz, Y. Horikoshi, M. Naganuma, K. Nozawa
Workshop "Electronic Materials and Devices", Nagoya (1988)

Controlled Formation of Misfit Dislocations for Heteroepitaxial Growth of GaAs on (100) Si by Migration-Enhanced Epitaxy
W. Stolz, Y. Horikoshi and M. Naganuma
Jpn. J. Appl. Phys. 27 Part 2 (6) (1988), L1140 - L1143

Initial Growth Conditions of GaAs on (100) Si Grown by Migration-Enhanced Epitaxy
W. Stolz, M. Naganuma and Y. Horikoshi
Jpn. J. Appl. Phys. 27 Part 2 (3) (1988), L283 - L286

Sharp photoluminescence of GaAs/(AlGa)As SQW grown on Si substrate by migration-enhanced epitaxy
M. Naganuma, W. Stolz, Y. Horikoshi
Proc. 19^th Conf. "Solid State Devices and Materials", Tokyo (1987),
Japan Society of Applied Physics, Tokyo (1987), p. 513

Optical and structural properties of GaAs grown on (100) Si by molecular-beam epitaxy
W. Stolz, F. E. G. Guimaraes, and K. Ploog
J. Appl. Phys. 63 (2) (1988), pp. 492 - 499

1987

Position and character (Ɖ or x) of energy states in short-period (GaAs)m(AlAs)n superlattices
J. Nagle, M. Garriga, W. Stolz, T. Isu et K. Ploog
Proc. 3^rd Int. Conf. "Modulated Semiconductor Structures", Montpellier (1987),
Journal de Physique Colloques 48 (5C) (1987), pp. 495 - 498

Effect of barrier configuration and interface qualtiy on structural and electronic properties of MBE grown (AlGa)As/GaAs, (AlGa)Sb/GaSb and (AlIn)As/(GaIn)As superlattices
K. Ploog, W. Stolz, L. Tapfer
Proc. NATO Adv. Res. Workshop "Thin Film Growth Techniques",
Eds. R. F. C. Farrow, S. S. P. Parkin, P. J. Dobson, J. H. Neave, A. S. Arrott, Brighton (1986), Plenum Press (New York, London), ISBN 0-306-42686-2
NATO ASI Series B 163 (1987)

Absorption spectroscopy on Ga_0.47In_0.53As/Al_0.48LIn_0.52As multi-quantum-well heterostructures,
II. Subband structure
W. Stolz, J. C. Maan, M. Altarelli, L. Tapfer, and K. Ploog
Phys. Rev. B 36 (8) (1987), pp. 4310 - 4315

Absorption spectroscopy on Ga_0.47In_0.53As/Al_0.48LIn_0.52As multi-quantum-well heterostructures,
I. Excitonic transitions
W. Stolz, J. C. Maan, M. Altarelli, L. Tapfer, and K. Ploog
Phys. Rev. B 36 (8) (1987), pp. 4301 - 4309

Cooling of photoexcited carriers in a (GaIn)As multiple quantum well
H. Lobentanzer, H.-J. Polland, W. W. Rühle, W. Stolz, K. Ploog
Int. Conf. "Quantum Electronics" (1987), Opt. Soc. Am.

Carrier cooling in undoped and modulation-doped Ga_0.47In_0.53As multiple quantum wells
H. Lobentanzer, W. W. Rühle, H.-J. Polland, W. Stolz, and K. Ploog
Phys. Rev. B 36 (5) (1987), pp. 2954 - 2957

Cooling of hot carriers in Ga_0.47In_0.53As
H. Lobentanzer, H.-J. Polland, W. W. Rühle, W. Stolz, and K. Ploog
Appl. Phys. Lett. 51 (9) (1987), pp. 673 - 675

Cooling of an electron-hole plasma in a Ga_0.47In_0.53As multiple-quantum-well structure
H. Lobentanzer, H.-J. Polland, W. W. Rühle, W. Stolz, and K. Ploog
Phys. Rev. B 36 (2) (1987), pp. 1136 - 1139

Hot-carrier-phonon interaction in three- and two-dimensional Ga_0.47In_0.53As
H. Lobentanzer, W. W. Rühle, W. Stolz, K. Ploog
Solid State Communications 62 (1) (1987), pp. 53 - 56

Effect of barrier configuration on excitonic recombination in Ga_0.47In_0.53As/Al_0.48In_0.52As multi quantum well structure
W. Stolz, J. Wagner, K. Ploog
Journal of Crystal Growth 81 (1 - 4) (1987), pp. 79 - 84

1986

Structural characterization of (GaIn)As/(AlIn)As superlattices grown by molecular beam epitaxy
L. Tapfer, W. Stolz, K. Ploog
Proc. 18^th Int. Conf. "Solid State Devices and Materials" Tokyo (1986)
Japan Society Applied Physics (1986), p. 603

Effect of barrier configuration on excitonic recombination in Ga_.47In_.53As/Al_.48In_.52As multi quantum well structures
J. Wagner, W. Stolz, J. Knecht, K. Ploog
Solid State Communications 57 (10) (1986), pp. 781 - 784

Excitonic transitions in quantum wells composed of either binary or ternary III-V semiconductors grown by molecular beam epitaxy
J. L. de Miguel, Y. Ohmori, W. Stolz, L. Tapfer, K. Ploog, J. Wagner
Proc. 12^th Int. Symp. "GaAs and Related Compounds" Karuizawa (1985),
Inst. Phys. Conf. Ser. 79 (1986), pp. 457 - 462

High-resolution double-crystal X-ray diffraction for improved assessment of modulated semiconductor structures
L. Tapfer, W. Stolz, A. Fischer, K. Ploog
Surface Science 174 (1 - 3) (1986), pp. 88 - 93

1985

Optical and Structural Properties of Molecular Beam Epitaxial Grown Ga_0.47In_0.53As/Al_0.48In_0.52As Superlattices Emitting at 1.55 µm at Room Temperature
W. Stolz, L. Tapfer, A. Breitschwerdt, and K. Ploog
Appl. Phys. A 38 (2) (1985), pp. 97 - 102

Luminescence excitation spectroscopy on Ga_0.47In_0.53As/Al_0.48In_0.52As quantum-well heterostructures
J. Wagner, W. Stolz, and K. Ploog
Phys. Rev. B 32 (6) (1985), pp. 4214 - 4216

Free-exciton luminescence in GaSb quantum wells confined by short-period AlSb-GaSb superlattices
K. Ploog, Y. Ohmori, H. Okamoto, W. Stolz, and J. Wagner
Appl. Phys. Lett. 47 (4) (1985), pp. 384 - 386

Influence of growth conditions on the optical and structural properties of (GaIn)As/(AlIn)As superlattices grown by molecular beam epitaxy
W. Stolz, L. Tapfer, K. Ploog
Proc. Eur. Materials Research Society Symp. Strasbourg (1985)
J. de Phys. Suppl. (1985), p. 219

Luminescence of (GaIn)As/(AlIn)As quantum well heterostructures grown by molecular beam epitaxy
W. Stolz, K. Fujiwara, L. Tapfer, H. Oppolzer, K. Ploog
Proc. 11^th Int. Symp. "GaAs and Related Compounds" Biarritz (1984),
Inst. Phys. Conf. Ser. 74 (1985), p. 139

1982

Impurity diffusion in amorphous silicon and its implications for solar cells
S. Kalbitzer, M. Reinelt, W. Stolz
In: W. H. Bloss, G. Grassi (Eds.) Fourth E.C. Photovoltaic Solar Energy Conference, Springer Dordrecht
Proc. 4^th Int. Conf. "Photovoltaic Solar Energy" Stresa (1982), pp. 1059 - 1062