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Semiconductor lasers

We study the physical properties of edge- as well as surface emitting semiconductor laser structures (vertical (external) cavity surface-emitting lasers (V(E)CSEL) in various emission wavelength ranges also applying novel active layer concepts. At present we are concentrating on laser concepts using metastable III/V-compounds ((Ga,In)(N,As)/GaAs, (Ga,In)(As,Bi)/InP or Ga(N,As,P,Sb)/Si) or specific active layer design applying so-called type-II-“W”-heterostructures also for data and telecommunication applications in the near infrared wavelength range from 850 nm to 1.65 µm. These studies are performed in close cooperation with the first principle microscopic modelling activities in the semiconductor theory groups.