Main Content

Publications

2025

Imaging Built-in Electric Fields and Light Matter by Fourier-precession TEM
T. Lorenzen, B. März, T. Xue, A. Beyer, K. Volz, T. Bein, K. Müller-Caspary
Microscopy and Microanalysis 31 (Supplement_1), ozaf048. 035

Carrier dynamics in site-controlled InGaAsN: H/GaAs quantum disks
S. Gandan, J. S. D. Morales, G. Pettinari, M. Felici, E. Sterzer, K. Volz, A. Polimeni
Journal of Applied Physics 137 (22)

Mechanism of Self-Assembled Cubic InGaN/GaN Quantum Well Formation in Metal-Modulated Molecular Beam Epitaxy
M. F. Zscherp, S. A. Jentsch, V. Lider, M. Chia. A. Beyer, A. Henss, D. J. As, K. Volz, S. Chatterjee, J. Schörmann
Crystal Growth & Design 25 (11), 3793-3799

Effect of a Two-Step Temperature-Swing Synthesis on Coarse-Grained LiNiO2 Secondary Particles Characterized by Scanning Transmission Electron Microscopy
T. Demuth, P. Kurzhals, S. Ahmed, F. Riewald, M. Malaki, J. Haust, A. Beyer, J. Janek, K. Volz
Chemistry of Materials 37 (11), 3993-4004

In Situ 4D STEM of LiNiO2 Particles Heated in an Oxygen Atmosphere: Toward Investigation of Solid‐State Batteries Under Realistic Processing Conditions
T. Demuth, S. Ahmed, P. Kurzhals, J. Haust, J. Belz, A. Beyer, J. Janek, K. Volz
Small Methods, 2500357

Unraveling Multiphase Conversion Pathways in Lithium–Sulfur Batteries through Cryo Transmission Electron Microscopy and Machine Learning-Assisted Operando Neutron Scattering
J.-M. von Mentlen, A. S. Güngör, T. Demuth, J. Belz, M. Plodinec, P. Dutta, A. Vizintin, L. Porcar, K. Volz, V. Wood, C. Prehal
ACS nano 19 (17), 16626-16638

Interface‐Specific Excitation of Coherent Phonons at the Buried GaP/Si (001) Heterointerface
G.Mette, K. Ishioka, S. Youngkin, W. Stolz, K. Volz, U. Höfer
Advanced Materials Interfaces 12 (7), 2400573

Design of a functional steam electrode for Proton-conducting ceramic electrolysis cells based on BaCo_0.4Fe_0.4Zr_0.2O_3−δ : BaZr_0.7Ce_0.2Y_0.1O_3−δ composite
S. K. Dwivedi, L.-A. Schaefer, Y. Zeng, Y. J. Sohn, J. Malzbender, A. Beyer, C. Becker, K. Volz, N. H. Menzler, O. Guillon, M. E. Ivanova, R. Kumar
Journal of the European Ceramic Society 45 (11) (2025), 117348

Engineering the Artificial Cathode-Electrolyte Interphase Coating for Solid-State Batteries via Tailored Annealing
M. Kissel, F. Walther, J. Hertle, T. Demuth, R. Zhang, P. Brüner, T. Brezesinski, K. Volz, J. Janek
Chem. Mater. 37 (6) (2025), pp. 2192 - 2203

Metal-Modulated Growth of Cubic, Red-Emitting InGaN Layers and Self-Assembled InGaN/GaN Quantum Wells by Molecular Beam Epitaxy
S. A. Jentsch, M. F. Zscherp, V. Lider, F. Winkler, A. Beyer, J. Belz, N. M. Gimbel, M. Stein, D. J. As, A. Henss, K. Volz, S. Chatterjee, J. Schörmann
ACS Appl. Electron. Mater. 7 (5) (2025), pp. 1891 - 1898

Interface-Specific Excitation of Coherent Phonons at the Buried GaP/Si(001) Heterointerface
G. Mette, K. Ishioka, S. Youngkin, W. Stolz, K. Volz, U. Höfer
Adv. Mater. Interfaces (2025), 2400573, doi.org/10.1002/admi.202400573

Lithiated polymer coating for interface stabilization in Li₆PS₅Cl-based solid-state batteries with high-nickel NCM
B.-X. Shi, F. Weber, Y. Yusim, T. Demuth, K. Vettori, A. Münchinger, G. Titvinidze, K. Volz, A. Henss, R. Berger and F. H. Richter
J. Mater. Chem. A 13 (4) (2025), pp. 2600 - 2614

Correlation of interface structure and optical properties of Ga(N,As) and Ga(As,Bi) based type-II hetero structures
T. Hepp, S. Firoozabadi, R. Günkel, V. Chejarla, O. Maßmeyer, A. Beyer, K. Volz
J. Cryst. Growth 651 (2025), 127976

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  Charge transfer magnetoexcitons in magnetoabsorption spectra of asymmetric type-II double quantum wells
  J. Röder, M. Gerhard, C. Fuchs, W. Stolz, W. Heimbrodt, M. Koch, C. Ngo, J. T. Steiner, T. Meier
  Phys. Rev. B 110 (19) (2024), 195306
  
  Synthesis of 2D Gallium Sulfide with Ultraviolet Emission by MOCVD
  O. Maßmeyer, R. Günkel, J. Glowatzki, P. Klement, B. Ojaghi Dogahe, S. R. Kachel, F. Gruber, M. Müller, M. Fey, J. Schörmann, J. Belz, A. Beyer, J. M. Gottfried, S. Chatterjee, K. Volz
  Small 20 (37) (2024), 2402155
  
  A Small Step for Epitaxy, a Large Step Toward Twist Angle Control in 2D Heterostructures
  O. Maßmeyer, J. Belz, B. Ojaghi Dogahe, M. Widemann, R. Günkel, J. Glowatzki, M. Bergmann, S. Pasko, S. Krotkus, M. Heuken, A. Beyer, K. Volz
  Adv. Mater. Interfaces 11 (23) (2024), 2400158
  
  Near-Infrared Light Trapping and Avalanche Multiplication in Silicon Epitaxial Microcrystals
  V. Falcone, A. Barzaghi, F. Signorelli, J. Valente, S. Firoozabadi, C. Zucchetti, R. Bergamaschini, A. Ballabio, F. Bottegoni, F. Zappa, F. Montalenti, L. Miglio, K. Volz, D. J. Paul, P. Biagioni, A. Tosi, G. Isella
  Adv. Optical Mater. 12 (14) (2024), 2302568
  
  Optical Stark effect in type-II semiconductor heterostructures
  F. Schäfer, A. Trautmann, C. Ngo, J. T. Steiner, C. Fuchs, K. Volz, F. Dobener, M. Stein, T. Meier, and S. Chatterjee
  Phys. Rev. B 109 (7) (2024), 075301
  
  Chemo-mechanical failure mechanisms of the silicon anode in solid-state batteries
  H. Huo, M. Jiang, Y. Bai, S. Ahmed, K. Volz, H. Hartmann, A. Henss, C. V. Singh, D. Raabe & J. Janek
  Nature Materials 23 (2024), pp. 543 - 551
  
  Imaging built-in electric fields and light matter by Fourier-precession TEM
  T. Lorenzen, B. März, T. Xue, A. Beyer, K. Volz, T. Bein & K. Müller-Caspary 
  Scientific Reports 14 (2024), 1320
  
  “Depo-all-around”: A novel FIB-based TEM specimen preparation technique for solid state battery composites and other loosely bound samples
  T. Demuth, T. Fuchs, A. Beyer, J. Janek, K. Volz
  Ultramicroscopy 257 (2024), 113904
  
  Metal Organic Vapor Phase Epitaxy in a Transmission Electron Microscope
  M. Widemann, D. Krug, O. Maßmeyer, F. Gruber, A. Beyer, K. Volz
  Small Methods 8 (7) (2024), 2301079
  

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  Probing the Interface Evolution in Co-sintered All-Phosphate Cathode-Solid Electrolyte Composites
  M. Malaki, J. Haust, J. P. Beaupain, H. Auer, A. Beyer, K. Wätzig, M. Kusnezoff, K. Volz
  Adv. Mater. Interfaces 10 (35) (2023), 2300513
  
  Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic In_xGa_1–xN
  M. F. Zscherp, S. A. Jentsch, M. J. Müller, V. Lider, C. Becker, L. Chen, M. Littmann, F. Meier, A. Beyer, D. M. Hofmann, D. J. As, P. J. Klar, K. Volz, S. Chatterjee, J. Schörmann
  ACS Applied Materials & Interfaces 15 (33) (2023), pp. 39513 - 39522
  
  Impact of beam size and diffraction effects in the measurement of long-range electric fields in crystalline samples via 4DSTEM
  D. Heimes, V. S. Chejarla, S. Ahmed, F. Hüppe, A. Beyer, K. Volz
  Ultramicroscopy 253 (2023), 113821
  
  Accurate first principles band gap predictions in strain engineered ternary III-V semiconductors
  B. Mondal, M. Kröner, T. Hepp, K. Volz, and R. Tonner-Zech
  Phys. Rev. B 108 (3) (2023), 035202
  
  Structure determination in a new type of amorphous molecular solids with different nonlinear optical properties: a comparative structural analysis
  J. Link Vasco, J. R. Stellhorn, B. D. Klee, B. Paulus, J. Belz, J. Haust, S. Hosokawa, S. Hayakawa, K. Volz, I. Rojas León, J. Christmann, S. Dehnen, W.-C. Pilgrim
  Journal of Physics: Condensed Matter 35 (38) (2023), 384001
  
  Stressed during cycling: Electrochemically induced mechanical deformation in Ni-rich cathode materials
  S. Ahmed, K. Volz
  Matter 6 (6) (2023), pp. 1682 - 1684
  
  Measuring Spatially-Resolved Potential Drops at Semiconductor Hetero-Interfaces Using 4D-STEM
  V. S. Chejarla, S. Ahmed, J. Belz, J. Scheunert, A. Beyer, K. Volz
  Small Methods 7 (9) (2023), 2300453
  
  Influence of the sintering temperature on LLZO-NCM cathode composites for solid-state batteries studied by transmission electron microscopy
  T. Demuth, T. Fuchs, F. Walther, A. Pokle, S. Ahmed, M. Malaki, A. Beyer, J. Janek, K. Volz
  Matter 6 (7) (2023), pp. 2324 - 2339
  
  The Influence of Internal Interfaces on Charge-Carrier Diffusion in Semiconductor Heterostructures
  N. Mengel, L. Gümbel, P. Klement, M. Fey, C. Fuchs, K. Volz, S. Chatterjee, M. Stein
  Phys. Status Solidi B 260 (9) (2023), 2300103
  
  Kinking of GaP Nanowires Grown in an In Situ (S)TEM Gas Cell Holder
  D. Krug, M. Widemann, F. Gruber, S. Ahmed, T. Demuth, A. Beyer, K. Volz
  Adv. Mater. Interfaces 10 (17) (2023), 2202507
  
  Mitigating Contact Loss in Li₆PS₅Cl-Based Solid-State Batteries Using a Thin Cationic Polymer Coating on NCM
  B.-X. Shi, Y. Yusim, S. Sen, T. Demuth, R. Ruess, K. Volz, A. Henss, F. H. Richter
  Adv. Energy Mater. 13 (24) (2023), 2300310
  
  Self-catalyzed GaP nanowire MOVPE growth on Si
  D. Krug, J. Glowatzki, F. Hüppe, M. Widemann, F. Gruber, A. Beyer, K. Volz
  J. Cryst. Growth 609 (2023), 127138
  
  Gain recovery dynamics in active type-II semiconductor heterostructures
  F. Schäfer, M. Stein, J. Lorenz, F. Dobener, C. Ngo, J. T. Steiner, C. Fuchs, W. Stolz, K. Volz, T. Meier, J. Hader, J. V. Moloney, S. W. Koch, S. Chatterjee
  Appl. Phys. Lett. 122 (8) (2023), 082104
  
  Formation of an Artificial Cathode–Electrolyte Interphase to Suppress Interfacial Degradation of Ni-Rich Cathode Active Material with Sulfide Electrolytes for Solid-State Batteries
  T.-T. Zuo, F. Walther, S. Ahmed, R. Rueß, J. Hertle, B. Mogwitz, K. Volz, J. Janek
  ACS Energy Lett. 8 (3) (2023), pp. 1322 - 1329
  
  Insights into molecular cluster materials with adamantane-like core structures by considering dimer interactions
  S. Schwan, A. J. Achazi, F. Ziese, P. R. Schreiner, K. Volz, S. Dehnen, S. Sanna, D. Mollenhauer
  J. Comput. Chem. 44 (7) (2023), pp. 843 - 856
  
  Coating versus Doping: Understanding the Enhanced Performance of High-Voltage Batteries by the Coating of Spinel LiNi_0.5Mn_1.5O₄ with Li_0.35La_0.55TiO₃
  V. Mereacre, P. Stüble, V. Trouillet, S. Ahmed, K. Volz, J. R. Binder
  Adv. Mater. Interfaces 10 (2) (2023), 2201324
  
  Probing the Ni(OH)₂ Precursor for LiNiO₂ at the Atomic Scale: Insights into the Origin of Structural Defect in a Layered Cathode Active Material
  A. Pokle, D. Weber, M. Bianchini, J. Janek, K. Volz
  Small 19 (4) (2023), 2205508

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  Phase relaxation control in heterostructures featuring charge-transfer excitons
  M. Fey, M. Stein, C. Fuchs, W. Stolz, K. Volz, S. Chatterjee
  Phys. Rev. B 106 (16) (2022), 165303
  
  AlN Buffer Enhances the Layer Quality of MBE-Grown Cubic GaN on 3C-SiC
  M. F. Zscherp, N. Mengel, D. M. Hofmann, V. Lider, B. Ojaghi Dogahe, C. Becker, A. Beyer, K. Volz, J. Schörmann, S. Chatterjee
  Cryst. Growth Des. 22 (11) (2022), pp. 6786 - 6791
  
  Octave-spanning emission across the visible spectrum from single crystalline 1,3,5,7-tetrakis-(p-methoxyphenyl)adamantane
  M. J. Müller, F. Ziese, J. Belz, F. Hüppe, S. Gowrisankar, B. Bernhardt, S. Schwan, D. Mollenhauer, P. R. Schreiner, K. Volz, S. Sanna, S. Chatterjee
  Opt. Mater. Express 12 (9) (2022), pp. 3517 - 3529
  
  Terahertz radiation from propagating acoustic phonons based on deformation potential coupling
  S.-H. Park, S. Lee, K. Ishioka, C. J. Stanton, C.-S. Kee, A. Beyer, U. Höfer, W. Stolz, K. Volz, Y.-D. Jho
  Opt. Express 30 (13) (2022), pp. 23544 - 23555
  
  Adamantanes as White-Light Emitters: Controlling the Arrangement and Functionality by External Coulomb Forces
  J. Belz, J. Haust, M. J. Müller, K. Eberheim, S. Schwan, S. Gowrisankar, F. Hüppe, A. Beyer, P. R. Schreiner, D. Mollenhauer, S. Sanna, S. Chatterjee, K. Volz
  J. Phys. Chem. C 126 (23) (2022), pp. 9843 - 9854
  
  Deeper Understanding of the Lithiation Reaction during the Synthesis of LiNiO₂ Towards an Increased Production Throughput
  P. Kurzhals, F. Riewald, M. Bianchini, S. Ahmed, A. M. Kern, F. Walther, H. Sommer, K. Volz, J. Janek
  J. Electrochem. Soc. 169 (5) (2022), 050526
  
  Quantitative composition determination by ADF-STEM at a low-angular regime: a combination of EFSTEM and 4DSTEM
  S. Firoozabadi, P. Kükelhan, A. Beyer, J. Lehr, D. Heimes, K. Volz
  Ultramicroscopy 240 (2022), 113550
  
  White Light Generating Molecular Materials: Correlation Between the Amorphous/Crystalline Structure and Nonlinear Optical Properties
  J. Haust, J. Belz, M. Müller, B. D. Klee, J. Link Vasco, F. Hüppe, I. Rojas Léon, J. Christmann, A. Beyer, S. Dehnen, N. W. Rosemann, W.-C. Pilgrim, S. Chatterjee, K. Volz
  ChemPhotoChem 6 (6) (2022), e202200071
  
  Advanced Analytical Characterization of Interface Degradation in Ni-Rich NCM Cathode Co-Sintered with LATP Solid Electrolyte
  M. Malaki, A. Pokle, S.-K. Otto, A. Henss, J. P. Beaupain, A. Beyer, J. Müller, B. Butz, K. Wätzig, M. Kusnezoff, J. Janek, K. Volz
  ACS Appl. Energy Mater. 5 (4) (2022), pp. 4651 - 4663
  
  Tracing Low Amounts of Mg in the Doped Cathode Active Material LiNiO₂
  D. Weber, J. Lin, A. Pokle, K. Volz, J. Janek, T. Brezesinski, M. Bianchini
  J. Electrochem. Soc. 169 (3) (2022), 030540
  
  Separation of interface and substrate carrier dynamics at a heterointerface based on coherent phonons
  K. Ishioka, E. Angerhofer, C. J. Stanton, G. Mette, K. Volz, W. Stolz, and U. Höfer
  Phys. Rev. B 105 (3) (2022), 035309
  
  Effect of growth interruption on Ga(N, As)/Ga(As, Sb)/Ga(N, As) type-II-“W” quantum well heterostructures
  J. Lehr, L. Hellweg, C. Fuchs, S. Firoozabadi, P. Kükelhan, A. Beyer, K. Volz, W. Stolz
  J. Cryst. Growth 582 (2022), 126501
  
  A Dry-Processed Al₂O₃/LiAlO₂ Coating for Stabilizing the Cathode/Electrolyte Interface in High-Ni NCM-Based All-Solid-State Batteries
  R. S. Negi, Y. Yusim, R. Pan, S. Ahmed, K. Volz, R. Takata, F. Schmidt, A. Henss, M. T. Elm
  Adv. Mater. Interfaces 9 (8) (2022), 2101428
  
  Room-temperature laser operation of a Ga(In,As)/Ga(As,Bi)/Ga(In,As) W-type laser diode
  T. Hepp, J. Lehr, R. Günkel, O. Maßmeyer, J. Glowatzki, A. Ruiz Perez, S. Reinhard, W. Stolz, K. Volz
  Electron. Lett. 58 (2) (2022), pp. 70 - 72
  
  Selective Effects of the Host Matrix in Hydrogenated InGaAsN Alloys: Toward an Integrated Matrix/Defect Engineering Paradigm
  F. Filippone, S. Younis, G. Mattioli, M. Felici, E. Blundo, A. Polimeni, G. Pettinari, D. Giubertoni, E. Sterzer, K. Volz, D. Fekete, E. Kapon, A. Amore Bonapasta
  Adv. Funct. Mater. 32 (5) (2022), 2108862

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  Understanding the formation of antiphase boundaries in layered oxide cathode materials and their evolution upon electrochemical cycling
  S. Ahmed, A. Pokle, M. Bianchini, S. Schweidler, A. Beyer, T. Brezesinski, J. Janek, K. Volz
  Matter 4 (12) (2021), pp. 3953 – 3966
  
  Revealing the Significance of Catalytic and Alkyl Exchange Reactions during GaAs and GaP Growth by Metal Organic Vapor Phase Epitaxy
  O. Maßmeyer, J. Haust, T. Hepp, R. Günkel, J. Glowatzki, C. von Hänisch, W. Stolz, K. Volz
  ACS Omega 6 (42) (2021), pp. 28229 – 28241
  
  Reaction of Li_1.3Al_0.3Ti_1.7(PO₄)₃ and LiNi_0.6Co_0.2Mn_0.2O₂ in Co-Sintered Composite Cathodes for Solid-State Batterie
  J. P. Beaupain, K. Waetzig, S.-K. Otto, A. Henss, J. Janek, M. Malaki, A. Pokle, J. Müller, B. Butz, K. Volz, M. Kusnezoff, and A. Michaelis
  ACS Appl. Mater. Interfaces 13 (40) (2021), pp. 47488 – 47498
  
  Dilute Bismuth Containing W-Type Heterostructures for Long-Wavelength Emission on GaAs Substrates
  T. Hepp, J. Veletas, R. Günkel, O. Maßmeyer, J. Glowatzki, W. Stolz, S. Chatterjee, and K. Volz
  Cryst. Growth Des. 21 (11) (2021), pp. 6307 – 6313
  
  Optimization of imaging conditions for composition determination by annular dark field STEM
  S. Firoozabadi, P. Kükelhan, T. Hepp, A. Beyer, K. Volz
  Ultramicroscopy 230 (2021), 113387
  
  Stabilizing the Cathode/Electrolyte Interface Using a Dry-Processed Lithium Titanate Coating for All-Solid-State Batteries
  R. S. Negi, P. Minnmann, R. Pan, S. Ahmed, M. J. Herzog, K. Volz, R. Takata, F. Schmidt, J. Janek, and M. T. Elm
  Chem. Mater. 33 (17) (2021), pp. 6713 – 6723
  
  Amorphous Molecular Materials for Directed Supercontinuum Generation
  S. Dehnen, P. R. Schreiner, S. Chatterjee, K. Volz, N. W. Rosemann, W.-C. Pilgrim, D. Mollenhauer, S. Sanna
  ChemPhotoChem 5 (12) (2021), pp. 1033 – 1041
  
  Quantification of low-Z elements by energy-filtered scanning transmission electron microscopy
  S. Firoozabadi, A. Beyer, P. Kükelhan, D. Heimes, J. Lehr, K. Volz
  Microscopy and Microanalysis 27 (S1) (2021), pp. 1528 – 1529
  
  A robust technique to image all elements in LiNiO₂ cathode active material by 4D-STEM
  S. Ahmed, A. Pokle, J. Belz, M. Bianchini, A. Beyer, J. Janek and K. Volz
  Microscopy and Microanalysis 27 (S1) (2021), pp. 1446 – 1449
  
  Analyzing Nanometer-Thin Cathode Particle Coatings for Lithium-Ion Batteries — The Example of TiO₂ on NCM622
  Y. Moryson, F. Walther, J. Sann, B. Mogwitz, S. Ahmed, S. Burkhardt, L. Chen, P. J. Klar, K. Volz, S. Fearn, M. Rohnke, and J. Janek
  ACS Appl. Energy Mater. 4 (7) (2021), pp. 7168 – 7181
  
  Performance characteristics of low threshold current 1.25 μm type-II GaInAs/GaAsSb 'W'-lasers for optical communications
  D. A. Duffy, I. P. Marko, C. Fuchs, T. D. Eales, J. Lehr, W. Stolz and S. J. Sweeney
  J. Phys. D: Appl. Phys. 54 (36) (2021), 365104
  
  Signatures of a frequency-modulated comb in a VECSEL
  C. Kriso, A. Barua, O. Mohiuddin, C. Möller, A. Ruiz-Perez, W. Stolz, M. Koch, and A. Rahimi-Iman
  Optica 8 (4) (2021), pp. 458 – 463
  
  Synthesis and Postprocessing of Single-Crystalline LiNi_0.8Co_0.15Al_0.05O₂ for Solid-State Lithium-Ion Batteries with High Capacity and Long Cycling Stability
  R. Fantin, E. Trevisanello, R. Ruess, A. Pokle, G. Conforto, F. H. Richter, K. Volz, and J. Janek
  Chem. Mater. 33 (7) (2021), pp. 2624 - 2634
  
  Quantitative Characterization of Nanometer-Scale Electric Fields via Momentum-Resolved STEM
  A. Beyer, M. S. Munde, S. Firoozabadi, D. Heimes, T. Grieb, A. Rosenauer, K. Müller-Caspary, and K. Volz
  Nano Letters 21 (5) (2021), 2018 – 2025
  
  Optimized atomic layer deposition of homogeneous, conductive Al₂O₃ coatings for high-nickel NCM containing ready-to-use electrodes
  R. S. Negi, S. P. Culver, M. Wiche, S. Ahmed, K. Volz and M. T. Elm
  Phys. Chem. Chem. Phys. 23 (11) (2021), pp. 6725 – 6737
  
  Comparison of carrier-recombination in Ga(As,Bi)/Ga(N,As)-type-II quantum wells and W-type heterostructures
  J. Veletas, T. Hepp, F. Dobener, K. Volz, and S. Chatterjee
  Appl. Phys. Lett. 118 (5) (2021), 052103
  
  The influence of growth interruption on the luminescence properties of Ga(As,Sb)-based type II heterostructures
  L. Rost, J. Lehr, M. Maradiya, L. Hellweg, F. Fillsack, W. Stolz, W. Heimbrodt
  Journal of Luminescence 231 (2021), 117817
  
  Angle-resolved STEM using an iris aperture: Scattering contributions and sources of error for the quantitative analysis in Si
  T. Grieb, F. F. Krause, K. Müller-Caspary, S. Firoozabadi, C. Mahr, M. Schowalter, A. Beyer, O. Oppermann, K. Volz, A. Rosenauer
  Ultramicroscopy 221 (2021), 113175
  
  Monitoring the thermally induced transition from sp³-hybridized into sp²-hybridized carbons
  D. B. Schüpfer, F. Badaczewski, J. Peilstöcker, J. M. Guerra-Castro, H. Shim, S. Firoozabadi, A. Beyer, K. Volz, V. Presser, C. Heiliger, B. Smarsly, P. J. Klar
  Carbon 172 (2021), pp. 214 – 227
  
  

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  2020
  
  In Situ Monitoring of Thermally Induced Effects in Nickel-Rich Layered Oxide Cathode Materials at the Atomic Level
  A. Pokle, S. Ahmed, S. Schweidler, M. Bianchini, T. Brezesinski, A. Beyer, J. Janek, and K. Volz
  ACS Appl. Mater. Interfaces 12 (51) (2020), pp. 57047 – 57054
  
  Influence of plasmon excitations on atomic-resolution quantitative 4D scanning transmission electron microscopy
  A. Beyer, F. F. Krause, H. L. Robert, S. Firoozabadi, T. Grieb, P. Kükelhan, D. Heimes, M. Schowalter, K. Müller-Caspary, A. Rosenauer & K. Volz
  Scientific Reports 10 (2020), 17890
  
  Femtosecond time-resolved nonlinear optical spectroscopy of charge transfer at the buried GaP/Si(001) interface
  G. Mette, J. E. Zimmermann, A. Lerch, K. Brixius, J. Güdde, A. Beyer, M. Dürr, K. Volz, W. Stolz, and U. Höfer
  Appl. Phys. Lett. 117 (8) (2020), 081602
  
  In situ analysis of Bi terminated GaAs (0 0 1) and Ga(As,Bi) surfaces during growth by MOVPE
  O. Maßmeyer, T. Hepp, R. Günkel, J. Glowatzki, W. Stolz, K. Volz
  Applied Surface Science 533 (2020), 147401
  
  Widely Tunable Terahertz‐Generating Semiconductor Disk Laser
  K. A. Fedorova, H. Guoyu, M. Wichmann, C. Kriso, F. Zhang, W. Stolz, M. Scheller, M. Koch, A. Rahimi-Iman
  Phys. Status Solidi RRL 14 (10) (2020), 2000204
  
  Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates
  A. Barzaghi, S. Firoozabadi, M. Salvalaglio, R. Bergamaschini, A. Ballabio, A. Beyer, M. Albani, J. Valente, A. Voigt, D. J. Paul, L. Miglio, F. Montalenti, K. Volz, and G. Isella
  Cryst. Growth Des. 20 (5) (2020), pp. 2914 – 2920
  
  Ga(N,P) Growth on Si and Decomposition Studies of the N–P Precursor Di-tert-butylaminophosphane (DTBAP)
  J. Glowatzki, O. Maßmeyer, M. Köster, T. Hepp, E. Odofin, C. von Hänisch, W. Stolz and K. Volz
  Organometallics 39 (10) (2020), pp. 1772 – 1781
  
  Progress in Sputter Growth of β‐Ga₂O₃ by Applying Pulsed‐Mode Operation
  P. Schurig, F. Michel, A. Beyer, K. Volz, M. Becker, A. Polity, P. J. Klar
  Phys. Status Solidi A 217 (10) (2020), 1901009
  
  Direct Probe of Room-Temperature Quantum-Tunneling Processes in Type-II Heterostructures Using Terahertz Emission Spectroscopy
  M. Stein, C. Fuchs, W. Stolz, D. M. Mittleman, and M. Koch
  Phys. Rev. Applied 13 (5) (2020), 054073
  
  Visualization of Light Elements using 4D STEM: The Layered‐to‐Rock Salt Phase Transition in LiNiO₂ Cathode Material
  S. Ahmed, M. Bianchini, A. Pokle, M. S. Munde, P. Hartmann, T Brezesinski, A. Beyer, J. Janek, K. Volz
  Adv. Energy Mater. 10 (25) (2020), 2001026
  
  Epitaxial Growth and Structural Characterization of Ceria Deposited by Atomic Layer Deposition on High-Surface Porous Yttria-Stabilized Zirconia Thin Films
  M. F. Zscherp, J. Glaser, C. Becker, A. Beyer, P. Cop, J. Schörmann, K. Volz, M. T. Elm
  Cryst. Growth Des. 20 (4) (2020), pp. 2194 – 2201
  
  Anomalous Angle-Dependent Magnetotransport Properties of Single InAs Nanowires
  P. Uredat, R. Kodaira, R. Horiguchi, S. Hara, A. Beyer, K. Volz, P. J. Klar, M. T. Elm
  Nano Lett. 20 (1) (2020), pp. 618 - 624
  
  Wavelength and Pump-Power Dependent Nonlinear Refraction and Absorption in a Semiconductor Disk Laser
  C. Kriso, S. Kress, T. Munshi, M. Grossmann, R. Bek, M. Jetter, P. Michler, W. Stolz, M. Koch, A. Rahimi-Iman
  IEEE Photonics Technology Letters 32 (2) (2020), pp. 85 - 88
  
  
  2019
  
  Effect of the interface morphology on the lateral electron transport in (001) GaP/Si heterostructures
  L. Ostheim, P. J. Klar, Y. Moryson, M. Rohnke, A. Beyer, M. Volk, M. Munde, W. Stolz, and K. Volz
  J. Appl. Phys. 126 (2019), 215704
  
  Detailed Identification of the Progression of Antiphase Boundaries in GaP/Si(001)
  P. Farin, M. Marquardt, W. Martyanov, J. Belz, A. Beyer, K. Volz and A. Lenz
  ECS Trans. 93 (1) (2019), 93
  
  Bismuth surface segregation and disorder analysis of quaternary (Ga,In)(As,Bi)/InP alloys
  J. Veletas, T. Hepp, K. Volz, and S. Chatterjee
  J. Appl. Phys. 126 (13) (2019), 135705
  
  Metalorganic vapor phase epitaxy growth and characterization of quaternary (Ga,In)(As,Bi) on GaAs substrates
  T. Hepp, O. Maßmeyer, D. A. Duffy, S. J. Sweeney, and K. Volz
  J. Appl. Phys. 126 (8) (2019), 085707
  
  In Situ Studies for Understanding Intragranular Nanopore Evolution in Ni-rich Layered Oxide Cathode Material
  A. Pokle, S. Ahmed, A. Beyer, S. Schweidler, M. Bianchini, P. Hartmann, T. Brezesinski, J. Janek and K. Volz
  Microscopy and Microanalysis 25 (S2) (2019), pp. 2032 - 2033
  
  Decomposition Mechanisms of Di-tert-butylaminoarsane (DTBAA)
  O. Maßmeyer, S. Inacker, T. Hepp, J. Glowatzki, L. Nattermann, E. Sterzer, C. Ritter, C. von Hänisch, W. Stolz, K. Volz
  Organometallics 38 (16) (2019), 3181 - 3186
  
  The Role of Intragranular Nanopores in Capacity Fade of Nickel-Rich Layered Li(Ni_1–x–yCo_xMn_y)O₂ Cathode Materials
  S. Ahmed, A. Pokle, S. Schweidler, A. Beyer, M. Bianchini, F. Walther, A. Mazilkin, P. Hartmann, T. Brezesinski, J. Janek, K. Volz
  ACS Nano 13 (9) (2019), 10694 - 10704
  
  Monolithic integration of lattice-matched Ga(NAsP)-based laser structures on CMOS-compatible Si (001) wafers for Si-photonics applications
  K. Volz, P. Ludewig, W. Stolz
  Semiconductors and Semimetals 101 (2019), pp. 201 - 227
  
  Two-chip power-scalable THz-generating semiconductor disk laser
  H. Guoyu, C. Kriso, F. Zhang, M. Wichmann, W. Stolz, K. A. Fedorova, and A. Rahimi-Iman
  Optics Letters 44 (16) (2019), pp. 4000 - 4003
  
  Microcavity-enhanced Kerr nonlinearity in a vertical-external-cavity surface-emitting laser
  C. Kriso, S. Kress, T. Munshi, M. Grossmann, R. Bek, M. Jetter, P. Michler, W. Stolz, M. Koch, and A. Rahimi-Iman
  Optics Express 27 (9) (2019), pp. 11914 - 11929
  Erratum: Optics Express 29 (15) (2021), pp. 23290 – 23291
  
  Monolithic III/V integration on (001) Si substrate
  B. Kunert, K. Volz
  In: Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Material Properties and Applications, 1^st Ed., S. Irvine, P. Capper (Eds.)
  John Wiley and Sons Ltd. (2019), pp. 241 - 291
  
  Segregation at interfaces in (GaIn) As/Ga (AsSb)/(GaIn) As-quantum well heterostructures explored by atomic resolution STEM
  P. Kükelhan, S. Firoozabadi, A. Beyer, L. Duschek, C. Fuchs, J. O. Oelerich, W. Stolz, K. Volz
  Journal of Crystal Growth 524 (2019), 125180
  
  Ge/SiGe parabolic quantum wells
  A. Ballabio, J. Frigerio, S. Firoozabadi, D. Chrastina, A. Beyer, K. Volz, G. Isella
  Journal of Physics D: Applied Physics 52 (41) (2019), 415105
  
  Atomic Layer Deposition of Titania in Ordered Mesoporous Cerium Zirconium Oxide Thin Films: A Case Study
  P. Cop, M. Göttlicher, J. Schörmann, C. Boissière, A. Beyer, C. Becker, K. Volz, H. Over, B. M. Smarsly
  J. Phys. Chem. C 123 (20) (2019), pp. 12851 - 12861
  
  MOVPE Growth and Device Applications of Ternary and Quaternary Dilute Bismide Alloys on GaAs Substrates
  T. Hepp, L. Nattermann, K. Volz
  In: Bismuth-Containing Alloys and Nanostructures, S. Wang, P. Lu (Eds.), Springer, Singapore
  Springer Series in Materials Science 285 (2019), pp. 37 - 58
  
  Composition determination for quaternary III–V semiconductors by aberration-corrected STEM
  P. Kükelhan, T. Hepp, S. Firoozabadi, A. Beyer, K. Volz
  Ultramicroscopy 206 (2019), 112814
  
  Ab-initio calculation of band alignments for opto-electronic simulations
  J. O. Oelerich, M. J. Weseloh, K. Volz, and S. W. Koch
  AIP Advances 9 (2019), 055328
  
  Advanced Electron Microscopy for III/V on Silicon Integration
  A. Beyer, K. Volz
  Adv. Mater. Interfaces 6 (12) (2019), 1801951
  
  Simultaneous determination of local thickness and composition for ternary III-V semiconductors by aberration-corrected STEM
  P. Kükelhan, A. Beyer, S. Firoozabadi, T. Hepp, K. Volz
  Ultramicroscopy 201 (2019), pp. 49 - 57
  
  Giant bowing of the band gap and spin-orbit splitting energy in GaP_1-xBi_x dilute bismide alloys
  Z. L. Bushell, C. A. Broderick, L. Nattermann, R. Joseph, J. L. Keddie, J. M. Rorison,  K. Volz,  S. J. Sweeney
  Scientific Reports 9 (2019), 6835
  
  Composition determination of semiconductor alloys towards atomic accuracy by HAADF-STEM
  L. Duschek,  P. Kükelhan, A. Beyer, S. Firoozabadi, J. O. Oelerich, C. Fuchs, W. Stolz, A. Ballabio, G. Isella, K. Volz
  Ultramicroscopy 200 (2019), pp. 84 - 96
  
  Linewidth broadening and tunneling of excitons bound to N pairs in dilute GaAs:N
  B. Fluegel, D. A. Beaton, K. Alberi, K. Volz, W. Stolz
  J. Appl. Phys. 125 (14) (2019), 145704
  
  Three-dimensional structure of antiphase domains in GaP on Si(001)
  P. Farin, M. Marquardt, W. Martyanov, J. Belz, A. Beyer, K. Volz, A. Lenz
  Journal of Physics: Condensed Matter 31 (14) (2019), 144001
  
  Single-and dual-variant atomic ordering in GaAsP compositionally graded buffers on GaP and Si substrates
  R. M. France, M. Feifel, J. Belz, A. Beyer, K. Volz, J. Ohlmann, D. Lackner, F. Dimroth
  Journal of Crystal Growth 506 (2019), pp. 61 - 70
  
  Coherent optical and acoustic phonons generated at lattice-matched GaP/Si(0 0 1) heterointerfaces
  K. Ishioka, A. Beyer, W. Stolz, K. Volz, H. Petek, U. Höfer and C. J. Stanton
  J. Phys.: Condensed Matter 31 (9) (2019), 094003
  
  
  2018
  
  Modeling and experimental realization of modelocked VECSEL producing high power sub-100 fs pulses
  A. Laurain, I. Kilen, J. Hader, A. Ruiz Perez, P. Ludewig, W. Stolz, S. Addamane, G. Balakrishnan, S. W. Koch, and J. V. Moloney
  Appl. Phys. Lett. 113 (12) (2018), 121113
  
  Correlation of optical properties and interface morphology in type-II semiconductor heterostructures
  L. Rost, S. Gies, M. Stein, C. Fuchs, S. Nau, P. Kükelhan, K. Volz, W. Stolz, M. Koch, W. Heimbrodt
  J. Phys.: Condens. Matter 31 (1) (2018), 014001
  
  Investigation of fluorine and nitrogen as anionic dopants in nickel-rich cathode materials for lithium-ion batteries
  J. O. Binder, S. P. Culver, R. Pinedo, D. A. Weber, M. S. Friedrich, K. I. Gries, K. Volz, W. G. Zeier, J. Janek
  ACS Appl. Mater. Interfaces 10 (51) (2018), pp. 44452 - 44462
  
  Atomic-scale 3D reconstruction of antiphase boundaries in GaP on (001) silicon by STEM
  J. Belz, A. Beyer, K. Volz
  Micron 114 (2018), pp. 32 - 41
  
  Influence of the atom source operating parameters on the structural and optical properties of In_xGa_1-xN nanowires grown by plasma-assisted molecular beam epitaxy
  P. Hille, F. Walther, P. Klement, J. Müßener, J. Schörmann, J. Kaupe, S. Mitić, N. W. Rosemann, S. Chatterjee, A. Beyer, K. I. Gries, K. Volz, and M. Eickhoff
  J. Appl. Phys. 124 (16) (2018), 165703
  
  Direct Growth of III–V/Silicon Triple-Junction Solar Cells With 19.7% Efficiency
  M. Feifel, J. Ohlmann, J. Benick, M. Hermle, J. Belz, A. Beyer, K. Volz, T. Hannappel, A. W. Bett, D. Lackner, F. Dimroth
  IEEE Journal of Photovoltaics 8 (6) (2018), pp. 1590 - 1595
  
  Second-harmonic generation as a probe for structural and electronic properties of buried GaP/Si(001) interfaces
  K. Brixius, A. Beyer, G. Mette, J. Güdde, M. Dürr, W. Stolz, K. Volz, and U. Höfer
  J. Phys.: Condensed Matter 30 (48) (2018), 484001
  
  Influence of UDMHy on GaAs (0 0 1) surface reconstruction before and during growth of Ga(NAs) by MOVPE
  O. Maßmeyer, E. Sterzer, L. Nattermann, W. Stolz, K. Volz
  Applied Surface Science 458 (2018), pp. 512 - 516
  
  Enhanced Absorption by Linewidth Narrowing in Optically Excited Type-II Semiconductor Heterostructures
  M. Stein, C. Lammers, M. J. Drexler, C. Fuchs, W. Stolz, and M. Koch
  Phys. Rev. Lett. 121 (1) (2018), 017401
  
  Thermally Introduced Bismuth Clustering in Ga(P,Bi) Layers under Group V Stabilised Condi-tions Investigated by Atomic Resolution In Situ (S)TEM
  R. Straubinger, M. Widemann, J. Belz, L. Nattermann, A. Beyer and K. Volz
  Scientific Reports 8 (1) (2018), 9048
  
  1 eV Ga(NAsSb) grown by MOVPE using di-tertiary-butyl-arsano-amine (DTBAA)
  E. Sterzer, O. Maßmeyer, L. Nattermann, K. Jandieri, S. Gupta, A. Beyer, B. Ringler, C. von Hänisch, W. Stolz, and K. Volz
  AIP Advances 8 (5) (2018), 055329
  
  Structural and Electronic Properties of Isovalent Boron Atoms in GaAs
  C. M. Krammel, L. Nattermann, E. Sterzer, K. Volz, P. M. Koenraad
  J. Appl. Phys. 123 (16) (2018), 161589
  
  Optical functions and critical points of dilute bismide alloys studied by spectroscopic ellipsometry
  Z. L. Bushell, R. M. Joseph, L. Nattermann, P. Ludewig, K. Volz, J. L. Keddie, S. J. Sweeney
  J. Appl. Phys. 123 (4) (2018), 045701
  
  Dynamics of charge-transfer excitons in type-II semiconductor heterostructures
  M. Stein, C. Lammers, P.-H. Richter, C. Fuchs, W. Stolz, M. Koch, O. Vänskä, M. J. Weseloh, M. Kira, and S. W. Koch
  Phys. Rev. B 97 (12) (2018), 125306
  
  Ab initio calculations of the concentration dependent band gap reduction in dilute nitrides
  P. Rosenow, L. C. Bannow, E. W. Fischer, W. Stolz, K. Volz, S. W. Koch, and R. Tonner
  Phys. Rev. B 97 (7) (2018), 075201
  
  Tailoring the diameter of electrospun layered perovskite nanofibers for photocatalytic water splitting
  A. Bloesser, P. Voepel, M. O. Loeh, A. Beyer, K. Volz and R. Marschall
  J. Mater. Chem. A 6 (2018), pp. 1971 - 1978
  
  High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well lasers emitting at 1.3 µm
  C. Fuchs, A. Brüggemann, M. J. Weseloh, C. Berger, C. Möller, S. Reinhard, J. Hader, J. V. Moloney, A. Bäumner, S. W. Koch & W. Stolz
  Scientific Reports 8 (2018), 1422
  Author Correction: High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well lasers emitting at 1.3 µm
  C. Fuchs, A. Brüggemann, M. J. Weseloh, C. Berger, C. Möller, S. Reinhard, J. Hader, J. V. Moloney, A. Bäumner, S. W. Koch & W. Stolz 
  Scientific Reports 8 (2018), 7891
  
  An experimental approach for real time mass spectrometric CVD gas phase investigations
  L. Nattermann, O. Maßmeyer, E. Sterzer, V. Derpmann, H. Y. Chung, W. Stolz and K. Volz
  Scientific Reports  8 (2018), 319
  
  Composition determination of multinary III/V semiconductors via STEM HAADF multislice simulations
  L. Duschek, A. Beyer, J. O. Oelerich, K. Volz
  Ultramicroscopy 185 (2018), pp. 15 - 20
  
  Structure and composition of (GaMn)As formed by MOVPE
  K. Volz, M. Lampalzer, A. Schaper, J. Zweck, W. Stolz
  in: Microscopy of Semiconducting Materials 2001, Ed. A. G. Cullis
  CRC Press (2018), pp. 211 - 214
  
  
  2017
  
  On The Effects of Column Occupancy and Static Atomic Disorder on the Analysis of Chemical Ordering in Ga(P_(1-x)Bi_x) Compounds
  J. Belz, A. Beyer, L. Nattermann, K. Volz
  Microscopy and Microanalysis 23 (S1) (2017), pp. 1474 - 1475
  
  Anisotropic relaxation behavior of InGaAs/GaAs selectively grown in narrow trenches on (001) Si substrates
  W. Guo, Y. Mols, J. Belz, A. Beyer, K. Volz, A. Schulze, R. Langer, B. Kunert,
  J. Appl. Phys. 122 (2) (2017), 025303
  
  (GaIn)(NAs) growth using di-tertiary-butyl-arsano-amine (DTBAA)
  E. Sterzer, B. Ringler, L. Nattermann, A. Beyer, C. von Hänisch, W. Stolz, K. Volz,
  J. Cryst. Growth 467 (2017), pp. 132 - 136
  
  Impact of detuning on the performance of semiconductor disk lasers
  F. Zhang, C. Möller, M. Koch, S. W. Koch, A. Rahimi-Iman, W. Stolz
  Appl. Phys. B 123 (12) (2017), 291
  
  Determination of refractive index and direct bandgap of lattice matched BGaP and (BGa)(AsP) materials on exact oriented silicon
  M. Volk, and W. Stolz
  J. Appl. Phys. 122 (23) (2017), 235702
  
  Surface relaxation of strained Ga(P,As)/GaP heterostructures investigated by HAADF STEM
  A. Beyer, L. Duschek, J. Belz, J. O. Oelerich, K. Jandieri and K. Volz
  Journal of Microscopy 268 (3) (2017), pp. 239 - 247 (Special Issue: Microscopy of Semi-Conducting Materials)
  
  Formation and Structural Diversity of Organo-Functionalized Tin–Silver Selenide Clusters
  N. Rinn, L. Guggolz, K. Gries, K. Volz, J. Senker und S. Dehnen
  Chemistry - A European Journal 23 (62) (2017), pp. 15607 - 15611
  
  Three dimensional reconstruction of InGaN nanodisks in GaN nanowires: Improvement of the nanowire sample preparation to avoid missing wedge effects
  K. I. Gries, J. Schlechtweg, P. Hille, J. Schörmann, M. Eickhoff, K. Volz
  Journal of Crystal Growth 475 (2017), pp. 202 - 207
  
  In Situ Thermal Annealing Transmission Electron Microscopy (TEM) Investigation of III/V Semiconductor Heterostructures Using a Setup for Safe Usage of Toxic and Pyrophoric Gases
  R. Straubinger, A. Beyer, T. Ochs, W. Stolz, K. Volz
  Microscopy and Microanalysis 23 (4) (2017), pp. 751 - 757
  
  Orientation relationships of Mn_0.75Ga_0.25As crystallites on and within GaAs determined by scanning nano beam electron diffraction
  I. Häusler, P. Moeck, K. Volz and W. Neumann
  Crystal Research and Technology 52 (1) (2017), 1600261
  
  Atomic structure of ‘W’-type quantum well heterostructures investigated by aberration-corrected STEM
  P. Kükelhan, A. Beyer, C. Fuchs, M. J. Weseloh, S. W. Koch, W. Stolz and K. Volz
  Journal of Microscopy 268 (3) (2017), pp. 259 - 268
  
  Towards the Liquid Phase Exfoliation of Bismuth Iodide
  N. Heidary,  A. Beyer,  K. Volz  and  J. Heine
  Dalton Trans 46 (26) (2017), 8359 - 8362
  
  Sub-picosecond acoustic pulses at buried GaP/Si interfaces
  K. Ishioka, A. Rustagi, A. Beyer, W. Stolz, K. Volz, U. Höfer,  H. Petek, and C. J. Stanton
  Appl. Phys. Lett. 111 (6) (2017), 062105
  
  MOVPE growth of (GaIn)As/Ga(AsSb)/(GaIn)As type-II heterostructures on GaAs-substrate for near-infrared laser applications
  C. Fuchs, A. Beyer, K. Volz, W. Stolz
  J. Cryst. Growth 464 (2017), pp. 201 - 205
  
  Excitation dependence of the photoluminescence lineshape in Ga(NAsP)/GaP multiple quantum well: experiment and Monte-Carlo-simulation
  V. V. Valkovskii, M. K. Shakfa, K. Jandieri, P. Ludewig, K. Volz, W. Stolz, M. Koch, S. D. Baranovskii
  J. Phys. D: Appl. Phys. 50 (2017), 025105
  
  Fundamental transverse mode operation of a type-II vertical-external-cavity-surface-emitting laser at 1.2 µm
  C. Möller, F. Zhang, C. Fuchs, C. Berger, A. Rehn, A. Ruiz Perez, A. Rahimi-Iman, J. Hader, M. Koch, J. V. Moloney, S. W. Koch, W. Stolz
  Electron. Lett. 53 (2) (2017), pp. 93 - 94
  
  Pulses interactions in a colliding pulse modelocked vertical external cavity surface emitting laser
  A. Laurain, R. Rockmore, H. T. Chan, J. Hader, S. W. Koch, A. Ruiz-Perez, W. Stolz, J. V. Moloney
  J. Opt. Soc. Amer. B 34 (2) (2017), pp. 329 - 337
  
  Multi-angle VECSEL cavities for dispersion control and peak-power scaling
  C. W. Baker, M. Scheller, A. Laurain, A. Ruiz-Perez, W. Stolz, S. Addamane, G. Balakrishnan, S. W. Koch, R. J. Jones, J. V. Moloney
  IEEE Photon. Technol. Lett. 29 (3) (2017), pp. 326 - 629
  
  GaAs_1−xBi_x/GaN_yAs_1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics
  C. A. Broderick, S. Jin, I. P. Marko, K. Hild, P. Ludewig, Z. L. Bushell, W. Stolz, J. M. Rorison, E. P. O’Reilly, K. Volz, and S. J. Sweeney
  Sci Rep. 7 (2017), 46371
  
  Microstructural study of codeposited pentacene:perfluoropentacene grown on KCl by TEM techniques
  R. Félix, T. Breuer, G. Witte, K. Volz, K. I. Gries
  J. Cryst. Growth 471 (2017), pp. 29 – 36
  
  Exploiting strain to enhance the Bi incorporation in GaAs-based III/V semiconductors using MOVPE
  L. Nattermann, P. Ludewig, E. Sterzer, K. Volz
  J. Cryst. Growth 470 (2017), pp. 15 – 19
  
  Growth of high N containing GaNAs/GaP/BGaAsP multi quantum well structures on Si (0 0 1) substrates
  P. Ludewig, M. Diederich, K. Jandieri, W. Stolz
  J. Cryst. Growth 467 (2017), pp. 61 – 64
  
  GaP-interlayer formation on epitaxial GaAs(100) surfaces in MOVPE ambient
  H. Döscher, P. Hens, A. Beyer, L. Tapfer, K. Volz, W. Stolz
  J. Cryst. Growth 464 (2017), pp. 2 – 7
  
  MOVPE growth of Ga(PBi) on GaP and GaP on Si with Bi fractions up to 8%
  L. Nattermann, A. Beyer, P. Ludewig, T. Hepp, E. Sterzer, K. Volz
  J. Cryst. Growth 463 (2017), pp. 151 – 155
  
  Influence of surface relaxation of strained layers on atomic resolution ADF imaging
  A. Beyer, L. Duschek, J. Belz, J. O. Oelerich, K. Jandieri, K. Volz
  Ultramicroscopy 181 (2017), pp. 8 – 16
  
  STEMsalabim: A high-performance computing cluster friendly code for scanning transmission electron microscopy image simulations of thin specimens
  J. O. Oelerich, L. Duschek, J. Belz, A. Beyer, S. D. Baranovskii, K. Volz
  Ultramicroscopy 177 (2017), pp. 91 - 96
  
  Local Bi ordering in MOVPE grown Ga(As,Bi) investigated by high resolution scanning transmission electron microscopy
  A. Beyer, N. Knaub, P. Rosenow, K. Jandieri, P. Ludewig, L. Bannow, S. W. Koch, R. Tonner, K. Volz
  Applied Materials Today 6 (2017), pp. 22 – 28
  
  MOVPE Grown Gallium Phosphide–Silicon Heterojunction Solar Cells
  M. Feifel, J. Ohlmann, J. Benick, T. Rachow, S. Janz, M. Hermle, F. Dimroth, J. Belz, A. Beyer, K. Volz, and D. Lackner
  IEEE Journal of Photovoltaics 7 (2) (2017), pp. 502 - 507
  
  Photoconductive LT-GaAs Terahertz Antennas: Correlation Between Surface Quality and Emission Strength
  O. M. Abdulmunem, K. I. Hassoon, J. Völkner, M. Mikulics, K. I. Gries, J. C. Balzer
  J Infrared Milli Terahz Waves 38 (5) (2017), pp. 574 – 582
  
  Quantitative atomic resolution at interfaces: Subtraction of the background in STEM images with the example of (Ga,In)P/GaAs structure
  H. Han, A. Beyer, J. Belz, A. König, W. Stolz, and K. Volz
  J. Appl. Phys. 121 (2) (2017), 025301
  
  Recombination dynamics of type-II excitons in (Ga,In)As/GaAs/Ga(As,Sb) heterostructures
  S. Gies, B. Holz, C. Fuchs, W. Stolz, and W. Heimbrodt
  Nanotechnology 28 (2) (2017), 025701
  
  Codeposited pentacene: perfluoropentacene grown on SiO₂: a microstructural study by transmission electron microscopy
  R. Félix, K. Volz, and K. I. Gries
  J. Cryst. Growth 458 (2017), 87 - 95
  
  
  2016
  
  Mode-locked semiconductor disk lasers
  M. A. Gaafar, A. Rahimi-Iman, K. A. Fedorova, W. Stolz, E. U. Rafailov, and M. Koch
  Advances in Optics and Photonics 8 (3) (2016), pp. 370 - 400
  
  Gain spectroscopy of a type-II VECSEL chip
  C. Lammers, M. Stein, C. Berger, C. Möller, C. Fuchs, A. Ruiz Perez, A. Rahimi–Iman, J. Hader, J. V. Moloney, W. Stolz, S. W. Koch, and M. Koch
  Appl. Phys. Lett. 109 (23) (2016), 232107
  
  Band edge smearing due to compositional disorder in multi-component d-dimensional alloys
  M. Wiemer, K. Jandieri, M. Koch, F. Gebhard and S. D. Baranovskii
  Physica Status Solidi RRL 10 (12) (2016), pp. 911 - 914
  
  Type-II vertical-external-cavity surface-emitting laser with Watt level output powers at 1.2 µm
  C. Möller, C. Fuchs, C. Berger, A. Ruiz Perez, M. Koch, J. Hader, J. V. Moloney, S. W. Koch, W. Stolz
  Appl. Phys. Lett. 108 (7) (2016), 071102
  
  Dual-Wavelength Emission From a Serially Connected Two-Chip VECSEL
  F. Zhang, M. Gaafar, C. Möller, W. Stolz, M. Koch, A. Rahimi-Iman
  IEEE Photonics Technology Letters 28 (8) (2016), pp. 927 - 929
  
  Design and Fabrication of Hybrid Metal Semiconductor Mirror for High-Power VECSEL
  K. Gbele, A. Laurain, J. Hader, W. Stolz, J. V. Moloney
  IEEE Photonics Technology Letters 28 (7) (2016), pp. 732 - 735
  
  Preparation and Loading Process of Single Crystalline Samples into a Gas Environmental Cell Holder for In Situ Atomic Resolution Scanning Transmission Electron Microscopic Observation
  R. Straubinger, A. Beyer, K. Volz
  Microscopy and Microanalysis 22 (3) (2016), pp. 515 - 519
  
  MOVPE growth and characterization of quaternary Ga(PAsBi)/GaAs alloys for optoelectronic applications
  L. Nattermann, P. Ludewig, N. Knaub, N. W. Rosemann, T. Hepp, E. Sterzer, S. R. Jin, K. Hild, S. Chatterjee, S. J. Sweeney, W. Stolz, K. Volz
  Applied Materials Today 5 (2016), pp. 209 – 214
  
  Thermomigration and Soret effect in Na_xCoO₂ as thermoelectric material: Preparation and characterization of sodium cobaltate thin films
  C. Schneider, P. Schichtel, B. Mogwitz, R. Straubinger, A. Beyer, M. Rohnke, K. Volz and J. Janek
  Phys. Status Solidi A 213 (5) (2016), pp. 1284 - 1295 (Back cover p. 1368)
  
  Coherent phonon spectroscopy characterization of electronic bands at buried semiconductor heterointerfaces
  K. Ishioka, K. Brixius, A. Beyer, A. Rustagi, C. J. Stanton, W. Stolz, K. Volz, U. Höfer and H. Petek
  Appl. Phys. Lett. 108 (5) (2016), 051607
  
  Materials characterisation by angle-resolved scanning transmission electron microscopy
  K. Müller-Caspary, O. Oppermann, T. Grieb, F. F. Krause, A. Rosenauer, M. Schowalter, T. Mehrtens, A. Beyer, K. Volz, P. Potapov
  Scientific Reports 6 (2016), 37146
  
  Optical gain in GaAsBi/GaAs quantum well diode lasers
  I. P. Marko, C. A. Broderick, S. Jin, P. Ludewig, W. Stolz, K. Volz, J. M. Rorison, E. P. O’Reilly, S. J. Sweeney
  Scientific Reports 6 (2016), 28863
  
  Microstructural Analysis of Perfluoropentacene Films on Graphene and Graphite: Interface-Mediated Alignment and Island Formation
  R. Félix, T. Breuer, P. Rotter, F. Widdascheck, B. Eckhardt, G. Witte, K. Volz and K. I. Gries
  Cryst. Growth & Design 16 (12) (2016), pp 6941 – 6950
  
  Electrical injection type-II (GaIn)As/Ga AsSb)/(GaIn)As single 'W'-quantum well laser at 1.2 μm
  C. Fuchs, C. Berger, C. Möller, M. Weseloh, S. Reinhard, J. Hader, J. V. Moloney, S. W. Koch, and W. Stolz
  Electronic Letters 52 (22) (2016), pp. 1875 - 1877
  
  Band Offset in (Ga,In)As/Ga(As,Sb) Heterostructures
  S. Gies, M. J. Weseloh, C. Fuchs, W. Stolz, J. Hader, J. V. Moloney, S. W. Koch, W. Heimbrodt
  J. Appl. Phys. 120 (20) (2016), 204303
  
  Impedance spectroscopic study of the charge transfer resistance at the interface between a LiNi_0.5Mn_1.5O₄ high-voltage cathode film and a LiNbO₃ coating film
  M. Gellert, K. I. Gries, J. Sann, E. Pfeifer, K. Volz, B. Roling
  Solid State Ionics 287 (2016), pp. 8 – 12
  
  Novel nitrogen/gallium precursor [Ga(bdma)H₂] for MOVPE
  E. Sterzer, A. Beyer, L. Nattermann, W. Schorn, K. Schlechter, S. Pulz, J. Sundermeyer, W. Stolz, K. Volz
  Journal of Crystal Growth 454 (2016), pp. 173 – 179
  
  Colliding pulse mode locking of vertical-external-cavity surface-emitting laser
  A. Laurain, D. Marah, R. Rockmore, J. McInerney, J. Hader, A. Ruiz Perez, W. Stolz, and J. V. Moloney
  Optica 3 (7) (2016), pp. 781 - 784
  
  Surface Chemistry of tert-Butylphosphine (TBP) on Si(001) in the Nucleation Phase of Thin-Film Growth
  A. Stegmüller, K. Werner, M. Reutzel, A. Beyer, P. Rosenow, U. Höfer, W. Stolz, K. Volz, M. Dürr, and R. Tonner
  Chem. Eur. J. 22 (42) (2016), pp. 14920 - 14928
  
  Influence of spatial and temporal coherences on atomic resolution high angle annular dark field imaging
  A. Beyer, J. Belz, N. Knaub, K. Jandieri, K. Volz
  Ultramicroscopy 169 (2016), pp. 1 – 10
  
  A highly efficient directional molecular white-light emitter driven by a continuous-wave laser diode
  N. Rosemann, J. P. Eußner, A. Beyer, S. W. Koch, K. Volz, S. Dehnen, S. Chatterjee
  Science 352 (6291) (2016), pp. 1301 - 1304
  
  Interplay of boron localized states and electron transport in B_x Ga_1-x As_0.11 P_0.89:Te
  L. Ostheim, P. J. Klar, S. Liebich, P. Ludewig, K. Volz and W. Stolz
  Semicond. Sci. Technol. 31 (7) (2016), 07LT01
  
  Local sample thickness determination via scanning transmission electron microscopy defocus series
  A. Beyer, R. Straubinger, J. Belz and K. Volz
  Journal of Microscopy 262 (2) (2016), pp. 171 – 177
  
  Pyramidal Structure Formation at the Interface between III/V Semiconductors and Silicon
  A. Beyer, A. Stegmüller, J. O. Oelerich, K. Jandieri, K. Werner, G. Mette, W. Stolz, S. D. Baranovskii, R. Tonner, and K. Volz
  Chem. Mater. 28 (10) (2016), pp. 3265 – 3275
  
  Influence of growth temperature and disorder on spectral and temporal properties of Ga(NAsP) heterostructures
  R. Woscholski, S. Gies, M. Wiemer, M. K. Shakfa, A. Rahimi-Iman, P. Ludewig, S. Reinhard, K. Jandieri, S. D. Baranovskii, W. Heimbrodt, K. Volz, W. Stolz and M. Koch
  J. Appl. Phys. 119 (14) (2016), 145707
  
  Charge transfer luminescence in (GaIn)As/GaAs/Ga(NAs) double quantum wells
  P. Springer, S. Gies, P. Hens, C. Fuchs, H. Han, J. Hader, J. V. Moloney, W. Stolz, K. Volz, S. W. Koch, and W. Heimbrodt
  Journal of Luminescence 175 (2016), pp. 255 - 259
  
  Carrier dynamics in Ga(NAsP)/Si multi-quantum well heterostructures with varying well thickness
  M. K. Shakfa, R. Woscholski, S. Gies, T. Wegele, M. Wiemer, P. Ludewig, K. Jandieri, S. D. Baranovskii, W. Stolz, K. Volz, W. Heimbrodt, M. Koch
  Superlattices and Microstructures 93 (2016), pp. 67 - 72
  
  Efficient nitrogen incorporation in GaAs using novel metal organic As-N precursor di-tertiary-butyl-arsano-amine (DTBAA)
  E. Sterzer, A. Beyer, L. Duschek, L. Nattermann, B. Ringler, B. Leube, A. Stegmüller, R. Tonner, C. von Hänisch, W. Stolz, K. Volz
  Journal of Crystal Growth 439 (2016), pp. 19 – 27
  
  Direct Investigation of (Sub-) Surface Preparation Artifacts in GaAs-based materials by FIB Sectioning
  J. Belz, A. Beyer, T. Torunski, W. Stolz, K. Volz
  Ultramicroscopy 163 (2016), pp. 19 - 30
  
  FIB Plan View Preparation and Electron Tomography of Ga-Containing Droplets Induced by Melt-Back Etching in Si
  K. I. Gries, K. Werner, A. Beyer, W. Stolz and K. Volz
  Microscopy and Microanalysis 22 (2016), pp. 131 - 139
  
  Correlation of the nanostructure with optoelectronic properties during rapid thermal annealing of Ga(NAsP) quantum wells grown on Si(001) substrates
  T. Wegele, A. Beyer, S. Gies, M. Zimprich, W. Heimbrodt, W. Stolz and K. Volz
  J. Appl. Phys. 119 (2) (2016), 025705
  
  Interface morphology and composition of Ga(NAsP) quantum well structures for monolithically integrated LASERs on silicon substrates
  T. Wegele, A. Beyer, P. Ludewig, P. Rosenow, L. Duschek, K. Jandieri, R. Tonner, W. Stolz and K. Volz
  J. Phys. D. Appl. Phys. 49 (7) (2016), 075108
  
  MOVPE growth studies of Ga(NAsP)/(BGa)(AsP) multi quantum well heterostructures (MQWH) for the monolithic integration of laser structures on (001) Si-substrates
  P. Ludewig, S. Reinhard, K. Jandieri, T. Wegele, A. Beyer, L. Tapfer, K. Volz, W. Stolz
  Journal of Crystal Growth 438 (2016), pp. 63 - 69
  
  Quantification of Bi distribution in MOVPE-grown Ga(AsBi) via HAADF STEM
  N. Knaub, A. Beyer, T. Wegele, P. Ludewig, K. Volz
  Journal of Crystal Growth 433 (2016), pp. 89 – 96
  
  Time-resolved photoluminescence of Ga(NAsP) multiple quantum wells grown on Si substrate: effects of rapid thermal annealing
  R. Woscholski, M. K. Shakfa, S. Gies, M. Wiemer, A. Rahimi-Iman, M. Zimprich, S. Reinhard, K. Jandieri, S. D. Baranovskii, W. Heimbrodt, K. Volz, W. Stolz, M. Koch
  Thin Solid Films 613 (2016), pp. 55 – 58
  

• Inhalt ausklappen Inhalt einklappen 2011 - 2015

  2015
  
  The Thermal Resistance of High-Power Semiconductor Disk Lasers
  B. Heinen, C. Möller, K. Jandieri, B. Kunert, M. Koch, W. Stolz
  IEEE Journal of Quantum Electronics 51 (5) (2015), 2400109
  
  Antiphase Noise Dynamics in a Dual-Wavelength Vertical-External-Cavity Surface-Emitting Laser
  M. Wichmann, G. Town, J. Quante, M. Gaafar, A. Rahimi-Iman, W. Stolz, S. W. Koch, M. Koch
  IEEE Photonics Technology Letters 27 (19) (2015), pp. 2039 - 2042
  
  Atomically ordered (Mn,Ga)As crystallites on and within GaAs
  I. Häusler, P. Moeck, K. Volz and W. Neumann
  Cryst. Res. Technol. 50 (12) (2015), pp. 967 - 973
  
  Novel type-II material system for laser applications in the near-infrared regime
  C. Berger, C. Möller, P. Hens, C. Fuchs, W. Stolz, S. W. Koch, A. Ruiz Perez, J. Hader and J. V. Moloney
  AIP Advances 5 (4) (2015), 047105
  
  Metastable cubic zinc-blende III/V semiconductors: Growth and structural characteristics
  Review
  A. Beyer, W. Stolz, K. Volz
  Progress in Crystal Growth and Characterization of Materials 61 (2–4) (2015), pp. 46 – 62
  
  Analysis of optical scattering losses in vertical-external-cavity surface-emitting lasers
  D. Al Nakdali, M. K. Shakfa, B. Heinen, B. Kunert, W. Stolz, S. W. Koch, J. Hader, J. V. Moloney, A. Rahimi-Iman, M. Koch
  Appl. Phys. B. 120 (1) (2015), pp. 41 - 46
  
  Two-energy-scale model for description of the thermal quenching of photoluminescence in disordered Ga(As,Bi)
  M. K. Shakfa, M. Wiemer, P. Ludewig, K. Jandieri, K. Volz, W. Stolz, S. D. Baranovskii and M. Koch
  phys. stat. sol. (c) 12 (8) (2015), pp. 1187 - 1190
  
  Excitonic transitions in highly efficient (GaIn)As/Ga(AsSb) type-II quantum-well structures
  S. Gies, C. Kruska, C. Berger, P. Hens, C. Fuchs, A. Ruiz Perez, N. W. Rosemann, J. Veletas, S. Chatterjee, W. Stolz, S. W. Koch, J. Hader, J. V. Moloney, and W. Heimbrodt
  Appl. Phys. Lett. 107 (2015) 182104
  
  Energy scale of compositional disorder in Ga(AsBi)
  M. K. Shakfa, K. Jandieri, M. Wiemer, P. Ludewig, K. Volz, W. Stolz, S. D. Baranovskii and M. Koch
  J. Phys. D. Appl. Phys. 48 (42) (2015), 425101
  
  Determination of type-I band offsets in GaBi_xAs_1–x quantum wells using polarisation-resolved photovoltage spectroscopy and 12-band k.p calculations
  C. A. Broderick, P. E. Harnedy, P. Ludewig, Z. L. Bushell, K. Volz, R. J. Manning and E. P. O'Reilly
  Semicond. Sci. Technol. 30 (9) (2015), 094009
  
  Single-photon emission at a rate of 143MHz from a deterministic quantum-dot microlens triggered by a mode-locked vertical-external-cavity surface-emitting laser
  A. Schlehahn, M. Gaafar, M. Vaupel, M. Gschrey, P. Schnauber, J.-H. Schulze, S. Rodt, A. Strittmatter, W. Stolz, A. Rahimi-Iman, T. Heindel, M. Koch, and S. Reitzenstein
  Appl. Phys. Lett. 107 (4) (2015), 041105
  
  Compositional dependence of the band gap in Ga(NAsP) quantum well heterostructures
  K. Jandieri, P. Ludewig, T. Wegele, A. Beyer, B. Kunert, P. Springer, S. D. Baranovskii, S. W. Koch, K. Volz and W. Stolz
  J. Appl. Phys. 118 (6) (2015), 065701
  
  Quantitative characterization of the interface roughness of (GaIn)As quantum wells by high resolution STEM
  H. Han, A. Beyer, K. Jandieri, K. I. Gries, L. Duschek, W. Stolz, K. Volz
  Micron 79 (2015), pp. 1 – 7
  
  Self-assembly of ordered wurtzite/rock salt heterostructures—A new view on phase separation in Mg_xZn_1−xO
  K. I. Gries, T. A. Wassner, S. Vogel, J. Bruckbauer, I. Häusler, R. Straubinger, A. Beyer, A. Chernikov, B. Laumer, M. Kracht, C. Heiliger, J. Janek, S. Chatterjee, K. Volz and M. Eickhoff
  J. Appl. Phys. 118 (4) (2015), 045706
  
  MOVPE growth mechanisms of dilute bismide III/V alloys
  P. Ludewig, L. Nattermann, W. Stolz and K. Volz
  Semicond. Sci. Technol. 30 (9) (2015), 094017
  
  Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers
  I. P. Marko, S. R. Jin, K. Hild, Z. Batool, Z. L. Bushell, P. Ludewig, W. Stolz, K. Volz, R. Butkutė, V. Pačebutas, A. Geizutis, A. Krotkus and S. J. Sweeney
  Semicond. Sci. Technol. 30 (9) (2015), 094008
  
  MOVPE growth of Ga(AsBi)/GaAs using different metalorganic precursors
  L. Nattermann, P. Ludewig, L. Meckbach, B. Ringler, D. Keiper, C. von Hänisch, W. Stolz, K. Volz
  J. Cryst. Growth 426 (2015), pp. 54 - 60
   
  TEM of Sensitive Organic Materials: Imaging and Analysis with Reduced Beam Damage
  K. Gries, B. Haas, I. Häusler, T. Breuer, G. Witte, K. Volz
  Imaging & Microscopy 17 (1) (2015), pp. 46 - 48
  reprinted (adapted) with permission from Cryst. Growth Des. 14 (6) (2014), pp. 3010 – 3014 (Copyright (2014) Amercian Chemical Society)
  
  Charge Transfer across the Interface between LiNi_0.5Mn_1.5O₄ High-Voltage Cathode Films and Solid Electrolyte Films
  M. Gellert, K. I. Gries, J. Zakel, S. Kranz, S. Bradler, E. Hornberger, S. Müller, C. Yada, F. Rosciano, K. Volz and B. Roling
  J. Electrochem. Soc. 162 (4) (2015), A754 - A759
  
  Interface engineering and characterization at the atomic-scale of pure and mixed ion layer gas reaction buffer layers in chalcopyrite thin-film solar cells
  O. Cojocaru-Mirédin, Y. Fu, A. Kostka, R. Sáez-Araoz, A. Beyer, N. Knaub, K. Volz, C.-H. Fischer, D. Raabe
  Progress in Photovoltaics: Research and Applications 23 (6) (2015), pp. 705 – 716
  
  Thermal quenching of photoluminescence in Ga(AsBi)
  M. K. Shakfa, M. Wiemer, P. Ludewig, K. Jandieri, K. Volz, W. Stolz, S. D. Baranovskii and M. Koch
  J. Appl. Phys. 117 (2015), 025709
  
  Growth of III/V's on Silicon: Nitrides, Phosphides, Arsenides and Antimonides
  K. Volz, W. Stolz, A. Dadgar, A. Krost
  in: Handbook of Crystal Growth (2^nd Ed.): Thin Films and Epitaxy (2015), Edited by Thomas F. Kuech, pp. 1249 – 1300, ISBN: 978-0-444-63304-0
  
  
  2014
  
  High-Power Quantum-Dot Vertical-External-Cavity Surface-Emitting Laser Exceeding 8 W
  D. Al Nakdali, M. K. Shakfa, M. Gaafar, M. Butkus, K. A. Fedorova, M. Zulonas, M. Wichmann, F. Zhang, B. Heinen, A. Rahimi-Iman, W. Stolz, E. U. Rafailov, M. Koch
  IEEE Photon. Technol. Lett. 26 (15) (2014), pp. 1561 - 1564
  
  Bipolar Electric-Field Enhanced Trapping and Detrapping of Mobile Donors in BiFeO₃ Memristors
  T. You, N. Du, S. Slesazeck, T. Mikolajick, G. Li, D. Bürger, I. Skorupa, H. Stöcker, B. Abendroth, A. Beyer, K. Volz, O. G. Schmidt, and H. Schmidt
  ACS Appl. Mater. Interfaces 6 (22) (2014), pp. 19758 - 19765
  
  Multi-quantum well Ga(AsBi)/GaAs laser diodes with more than 6% of bismuth
  R. Butkutė, A. Geižutis, V. Pačebutas, B. Čechavičius, V. Bukauskas, R. Kundrotas, P. Ludewig, K. Volz, A. Krotkus
  Electronics Letters 50 (16) (2014), pp. 1155 - 1157
  
  Physical properties and optimization of GaBiAs/(Al)GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi
  I. P. Marko, P. Ludewig, Z. L. Bushell, S. R. Jin, K. Hild, Z. Batool, S. Reinhard, L. Nattermann, W. Stolz, K. Volz and S. J. Sweeney
  J. Phys. D: Appl. Phys. 47 (34) (2014), 345103
  
  Effect of boron localized states on the conduction band transport in B_xGa_{1− x}P
  S. Petznick, L. Ostheim, P. J. Klar, S. Liebich, K. Volz and W. Stolz
  Appl. Phys. Lett. 105 (2014), 222105
  
  Disturbing the coherent dynamics of an excitonic polarization with strong terahertz fields
  M. J. Drexler, R. Woscholski, S. Lippert, W. Stolz, A. Rahimi-Iman, and M. Koch
  Phys. Rev. B 90 (19) (2014), 195304
  
  Structural characteristics of gallium metal deposited on Si (0 0 1) by MOCVD
  K. Werner, A. Beyer, J. O. Oelerich, S. D. Baranovskii, W. Stolz, K. Volz
  Journal of Crystal Growth 405 (2014), pp. 102 - 109
  
  Investigation of the microstructure of metallic droplets on Ga(AsBi)/GaAs
  E. Sterzer, N. Knaub, P. Ludewig, R. Straubinger, A. Beyer, K. Volz
  Journal of Crystal Growth 408 (2014), pp. 71 - 77
  
  Simultaneous Quantification of Indium and Nitrogen Concentration in InGaNAs Using HAADF-STEM
  T. Grieb, K. Müller, E. Cadel, A. Beyer, M. Schowalter, E. Talbot, K. Volz and A. Rosenauer
  Microscopy and Microanalysis 20 (6) (2014), pp. 1740 - 1752
  
  Migration-enhanced epitaxy of thin GaAsBi layers
  R. Butkutė, V. Pačebutas, A. Krotkus, N. Knaub, and K. Volz
  Lith. J. Phys. 54 (2) (2014), pp. 125 - 129
  
  Self-mode-locking semiconductor disk laser
  M. Gaafar, P. Richter, H. Keskin, C. Möller, M. Wichmann, W. Stolz, A. Rahimi-Iman, and M. Koch
  Optics Express 22 (23) (2014), pp. 28390 - 28399
  
  Harmonic self-mode-locking of optically pumped semiconductor disc laser
  M. Gaafar, C. Möller, M. Wichmann, B. Heinen, B. Kunert, A. Rahimi-Iman, W. Stolz and M. Koch
  Electronic Letters 50 (7) (2014), pp. 542 - 543
  
  Mapping nanomechanical properties of freshly grown, native, interlamellar organic sheets on flat pearl nacre
  M. Launspach, K. I. Gries, F. Heinemann, A. Hübner, M. Fritz, M. Radmacher
  Acta Biomaterialia 10 (9) (2014), 3986 – 3996
  
  A 23-watt single-frequency vertical-external-cavity surface-emitting laser
  F. Zhang, B. Heinen, M. Wichmann, C. Möller, B. Kunert, A. Rahimi-Iman, W. Stolz, M. Koch
  Optics Exress 22 (11) (2014), 12817 - 12822
  
  Annealing effects on the composition and disorder of Ga(N,As,P) quantum wells on silicon substrates for laser application
  S. Gies, M. Zimprich, T. Wegele, C. Kruska, A. Beyer, W. Stolz, K. Volz and W. Heimbrodt
  Journal of Crystal Growth 402 (2014), pp. 169 - 174
  
  Microstructural Characterization of Organic Heterostructures by (Transmission) Electron Microscopy
  B. Haas, K. I. Gries, T. Breuer, I. Häusler, G. Witte, and K. Volz
  Cryst. Growth Des. 14 (6) (2014), pp. 3010 – 3014
  
  LiNi_0.5Mn_1.5O₄Thin-Film Cathodes on Gold-Coated Stainless Steel Substrates: Formation of Interlayers and Electrochemical Properties
  M. Gellert, K. I. Gries, J. Zakel, A. Ott, S. Spannenberger, C. Yada, F. Rosciano, K. Volz, B. Roling
  Electrochimica Acta 133 (2014), pp. 146 – 152
   
  Luminescence properties of dilute bismide systems
  B. Breddermann, A. Bäumner, S. W. Koch, P. Ludewig, W. Stolz, K. Volz, J. Hader, J. V. Moloney, C. A. Broderick, E. P. O'Reilly
  Journal of Luminescence 154 (2014), pp. 95 - 98
  
  Growth of Ga(AsBi) on GaAs by continuous flow MOVPE
  P. Ludewig, Z. L. Bushell, L. Nattermann, N. Knaub, W. Stolz, K. Volz
  Journal of Crystal Growth 396 (2014), pp. 95 - 99
  
  Growth and characterisation of Ga(NAsBi) alloy by metal organic vapour phase epitaxy
  Z. L. Bushell, P. Ludewig, N. Knaub, Z. Batool, K. Hild, W. Stolz, S. J. Sweeney, K. Volz
  Journal of Crystal Growth 396 (2014), pp. 79 - 84
  
  Optical noise of stabilized high-power single frequency optically pumped semiconductor laser
  A. Laurain, C. Mart, J. Hader, J. V. Moloney, B. Kunert, and W. Stolz
  Optics Letters 39 (6) (2014), pp. 1573 - 1576
  
  Comparison of Direct Growth and Wafer Bonding for the Fabrication of GaInP/GaAs Dual-Junction Solar Cells on Silicon
  T. Roesener, S. Essig, C. Weuffen, A. Wekkeli, E. Oliva, G. Siefer, K. Volz, T. Hannappel, D. Haussler, W. Jager, A. W. Bett
  IEEE Journal of Photovoltaics 4 (2) (2014), pp. 620 - 625
  
  15W Single Frequency Optically Pumped Semiconductor Laser With Sub-Megahertz Linewidth
  A. Laurain, C. Mart, J. Hader, J. V. Moloney, B. Kunert, W. Stolz
  IEEE Photonics Technology Letters 26 (2) (2014), pp. 131 - 133
  
  
  2013
  
  Evolution of multi-mode operation in vertical-external-cavity surface-emitting lasers
  M. Wichmann, M. K. Shakfa, F. Zhang, B. Heinen, M. Scheller, A. Rahimi-Iman, W. Stolz, J. V. Moloney, S. W. Koch, and M. Koch
  Optics Express 21 (26) (2013), pp. 31940 - 31950
  
  In situ spectroscopy of high-power vertical-external-cavity surface-emitting lasers
  A. Chernikov, M. Wichmann, J. Herrmann, B. Heinen, M. K. Shakfa, S. Chatterjee, S. W. Koch, B. Kunert, W. Stolz, T.-L. Wang, Y. Kaneda, M. Scheller, M. J. Yarborough, J. Hader, J. V. Moloney, M. Koch
  physica status solidi (b) 250 (9) (2013), pp. 1781 – 1784
  
  Chapter 7 – Bismuth-containing III–V semiconductors: Epitaxial growth and physical properties
  Z. Batool, S. Chatterjee, A. Chernikov, A. Duzik, R. Fritz, C. Gogineni, K. Hild, T. J. C. Hosea, S. Imhof, S. R. Johnson, Z. Jiang, S. Jin, M. Koch, S. W. Koch, K. Kolata, R. B. Lewis, X. Lu, M. Masnadi-Shirazi, J. Mirecki Millunchick, P. M. Mooney, N. A. Riordan, O. Rubel, S. J. Sweeney, J. C. Thomas, A. Thränhardt, T. Tiedje, K. Volz
  in: Molecular Beam Epitaxy (2013), pp. 139 – 158
  
  Temperature-dependent quantum efficiency of Ga(N,As,P) quantum wells
  N. W. Rosemann, B. Metzger, B. Kunert, K. Volz, W. Stolz and S. Chatterjee
  Applied Physics Letters 103 (25) (2013), 252105
  
  Atomic structure of (110) anti-phase boundaries in GaP on Si(001)
  A. Beyer, B. Haas, K. I. Gries, K. Werner, M. Luysberg, W. Stolz, and K. Volz
  Applied Physics Letters 103 (3) (2013), 032107
  
  Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser
  P. Ludewig, N. Knaub, N. Hossein, S. Reinhard, L. Nattermann, I. P. Marko, S. R. Jin, K. Hild, S. Chatterjee, W. Stolz, S. J. Sweeney, and K. Volz
  Applied Physics Letters 102 (24) (2013), 242115
  
  Quantitative chemical evaluation of dilute GaNAs using ADF STEM: Avoiding surface strain induced artifacts
  T. Grieb, K. Mueller, R. Fritz, V. Grillo, M. Schowalter, K. Volz, A. Rosenauer
  Ultramicroscopy 129 (2013), pp. 1 - 9
  
  In(SAr)(3) As a Building Block for 3D and Helical Coordination Polymers
  J. Heine, M. Holynska, M. Reuter, B. Haas, S. Chatterjee, M. Koch, K. I. Gries, K. Volz, S. Dehnen
  Crystal Growth & Design 13 (3) (2013), pp. 1252 - 1259
  
  Growth of (BGa)As, (BGa)P, (BGa)(AsP) and (BGaIn)P by MOVPE
  N. Sommer, R. Buss, J. Ohlmann, T. Wegele, C. Jurecka, S. Liebich, B. Kunert, W. Stolz, K. Volz
  J. Cryst. Growth 370 (2013), pp. 191 - 196
  
  MOVPE growth of Ga(AsBi)/GaAs multi quantum well structures
  P. Ludewig, N. Knaub, W. Stolz, K. Volz
  J. Cryst. Growth 370 (2013), pp. 186 - 190
  
  4.35 kW peak power femtosecond pulse mode-locked VECSEL for supercontinuum generation
  K. G. Wilcox, A. C. Tropper, H. E. Beere, D. A. Ritchie, B. Kunert, B. Heinen, and W. Stolz
  Optics Express 21 (2) (2013), pp. 1599 - 1605
  
  On the measurement of the thermal impedance in vertical-external-cavity surface-emitting lasers
  J. Hader, T.-L. Wang, J. V. Moloney, B. Heinen, M. Koch, S. W. Koch, B. Kunert, and W. Stolz
  J. Appl. Phys. 113  (15) (2013), 153102
   
  Double-scaled disorder in Ga(N,As,P)/GaP multiquantum wells
  C. Karcher, K. Jandieri, B. Kunert, R. Fritz, K. Volz,  W. Stolz, F. Gebhard, S. D. Baranovskii, W. Heimbrodt
  Journal of Luminescence 133 (2013), pp. 125 - 128
  
  Nonexponential photoluminescence transients in a Ga(NAsP) lattice matched to a (001) silicon substrate
  K. Jandieri, B. Kunert, S. Liebich, M. Zimprich, K. Volz, W. Stolz, F. Gebhard, and S. D. Baranovskii
  Phys. Rev. B 87 (3) (2013), 035303
  
  STEM strain analysis at sub-nanometre scale using millisecond frames from a direct electron read-out CCD camera
  K. Müller, H. Ryll, I. Ordavo, M. Schowalter, J. Zweck, H. Soltau, S. Ihle, L. Strüder, K. Volz, P. Potapov and A. Rosenauer
  Journal of Physics: Conf. Ser. 471 (1) (2013), 012024
  
   
  2012
   
  Scanning transmission electron microscopy strain measurement from millisecond frames of a direct electron charge coupled device
  K. Müller, H. Ryll, I. Ordavo, S. Ihle, L. Strüder, K. Volz, J. Zweck, H. Soltau, and A. Rosenauer
  Appl. Phys. Lett. 101 (21) (2012), 212110
  
  Grain Boundaries in a Lithium Aluminum Titanium Phosphate-Type Fast Lithium Ion Conducting Glass Ceramic: Microstructure and Nonlinear Ion Transport Properties
  M. Gellert, K. I. Gries , Ch. Yada, F. Rosciano, K. Volz, and B. Roling
  J. Phys. Chem. C 116 (43) (2012), pp. 22675 – 22678
  
  Strain Measurement in Semiconductor Heterostructures by Scanning Transmission Electron Microscopy
  K. Müller, A. Rosenauer, M. Schowalter, J. Zweck, R. Fritz and K. Volz
  Microscopy and Microanalysis 18 (5) (2012), pp. 995 - 1009
  
  Measurement of Composition and Strain by STEM
  A. Rosenauer, K. Müller, T. Mehrtens, M. Schowalter, J. Zweck, R. Fritz and K. Volz
  Microscopy and Microanalysis 18 (S2) (2012), pp. 1804 - 1805
  
  Monolithic integration of high electron mobility InAs-based heterostructure on exact (001) Silicon using a GaSb/GaP accommodation layer
  L. Desplanque, S. El Kazzi, C. Coinon, S. Ziegler, B. Kunert, A. Beyer, K. Volz, W. Stolz, Y. Wang, P. Ruterana, and X. Wallart
  Appl. Phys. Lett. 101 (14) (2012), 142111
  
  Quantum design strategy pushes high-power vertical-external-cavity surface-emitting lasers beyond 100 W
  T.-L. Wang, B. Heinen, J. Hader, C. Dineen, M. Sparenberg, A. Weber, B. Kunert, S. W. Koch, J. V. Moloney, M. Koch, W. Stolz
  Laser & Photonics Reviews 6 (5) (2012), pp. L12 – L14
  
  Efficiency-limiting processes in Ga(NAsP)/GaP quantum well lasers
  N. Hossain, S. R. Jin, S. Liebich, M. Zimprich, K. Volz, B. Kunert, W. Stolz, and S. J. Sweeney
  Appl. Phys. Lett. 101 (1) (2012), 011107
  
  Energy scaling of compositional disorder in Ga(N,P,As)/GaP quantum well structures
  K. Jandieri, M. K. Shakfa, S. Liebich, M. Zimprich, B. Kunert, C. Karcher, A. Chernikov, K. Volz, W. Stolz, M. Koch, S. Chatterjee, W. Heimbrodt, F. Gebhard, and S. D. Baranovskii
  Phys. Rev. B 86 (12) (2012), 125318
  
  Ultra-long palladium nanoworms by polymer grafts
  S. Bokern, K. Volz, S. Agarwal, A. Greiner
  Journal of Nanoparticle Research 14 (8) (2012), 1041
  
  Growth study of nonpolar Zn_1-xMg_xO epitaxial films on a-plane bulk ZnO by plasma-assisted molecular beam epitaxy
  B. Laumer, F. Schuster, M. Stutzmann, A. Bergmaier, G. Dollinger, S. Vogel, K. I. Gries, K. Volz, and M. Eickhoff
  Appl. Phys. Lett. 101 (12) (2012), 122106
  
  Passively modelocked VECSEL emitting 682 fs pulses with 5.1W of average output power
  M. Scheller, T.-L. Wang, B. Kunert, W. Stolz, S. W. Koch, J. V. Moloney
  Electronics Letters 48 (10) (2012), pp. 588 - 589
  
  106W continuous-wave output power from a vertical-external-cavity surface-emitting laser (VECSEL)
  B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, W. Stolz
  Electronics Letters 48 (9) (2012), pp. 516 - 517
  
  Methods of Electron Crystallography as Tools for Materials Analysis
  W. Neumann, H. Kirmse, I. Häusler, C. Grosse, P. Moeck, S. Rouvimov, M. Beekman, R. Atkins, D. C. Johnson, K. Volz
  Solid State Phenomena 186 (1) (2012), pp. 1 - 6
  
  Synthesis and Characterization of Colloidal Fluorescent Silver Nanoclusters
  S. Huang, C. Pfeiffer, J. Hollmann, S. Friede, J. Jin-Ching Chen, A. Beyer, B. Haas, K. Volz, W. Heimbrodt, J. M. Montenegro Martos, W. Chang, and W. J. Parak
  Langmuir 28 (24) (2012), pp. 8915 - 8919
  
  Temperature and pump power dependent photoluminescence characterization of MBE grown GaAsBi on GaAs
  N. A. Riordan, C. Gogineni, S. R. Johnson, X. Lu, T. Tiedje, D. Ding, Y.-H. Zhang, R. Fritz, K. Kolata, S. Chatterjee, K. Volz, S. W. Koch
  Journal of Materials Science: Materials in Electronics 23 (10) (2012), pp. 1799 - 1804
  
  Determination of the chemical composition of GaNAs using STEM HAADF imaging and STEM strain state analysis
  T. Grieb, K. Müller, R. Fritz, M. Schowalter, N. Neugebohrn, N. Knaub, K. Volz, A. Rosenauer
  Ultramicroscopy 117 (2012), pp. 15 – 23
  
  High Peak Power Operation of a 1- μ m GaAs-Based Optically Pumped Semiconductor Laser
  A. Laurain, T.-L. Wang, M. J. Yarborough, J. Hader, J. V. Moloney, S. W. Koch, B. Kunert, W. Stolz
  IEEE Photonics Technology Letters 24 (5) (2012), pp. 380 - 382
  
  On the Measurement of the Thermal Resistance of Vertical-External-Cavity Surface-Emitting Lasers (VECSELs)
  B. Heinen, F. Zhang, M. Sparenberg, B. Kunert, M. Koch, and W. Stolz
  IEEE Journal of Quantum Electronics 48 (7) (2012), pp. 934 - 940
  
  High room-temperature optical gain in Ga(NAsP)/Si heterostructures
  N. Koukourakis, C. Bückers, D. A. Funke, N. C. Gerhardt, S. Liebich, S. Chatterjee, C. Lange, M. Zimprich, K. Volz, W. Stolz, B. Kunert, S. W. Koch, and M. R. Hofmann
  Appl. Phys. Lett. 100 (9) (2012), 092107
  
  GaP heteroepitaxy on Si(001): Correlation of Si-surface structure, GaP growth conditions, and Si-III/V interface structure
  A. Beyer, J. Ohlmann, S. Liebich, H. Heim, G. Witte, W. Stolz, K. Volz
  J. Appl. Phys. 111 (8) (2012), 083534
  
  Parameters for temperature dependence of mean-square displacements for B-, Bi- and Tl-containing binary III-V compounds
  M. Schowalter, A. Rosenauer and K. Volz
  Acta Crystallographica A 68 (3) (2012), pp. 319 - 323
  
  Thermal management in high-power vertical-external-cavity surface-emitting lasers
  A. Chernikov, J. Herrmann, M. Scheller, M. Koch, B. Kunert, W. Stolz, S. Chatterjee, S. W. Koch, T.-L. Wang, Y. Kaneda, M. J. Yarborough, J. Hader, and J. V. Moloney
  Quantum Electronics and Laser Science Conference, San Jose, California (2012)
  
  Compositional disorder anomalies in Ga(N,P,As)/GaP quantum well structures
  K. Jandieri, S. D. Baranovskii, B. Kunert, M. Zimprich, S. Liebich, K. Volz, W. Stolz, S. Chatterjee, C. Karcher, W. Heimbrodt and F. Gebhard
  Journal of Physics: Conf. Ser. 376 (1) (2012), 012021
  
  
  2011
  
  Modal gain and time-resolved photoluminescence of Ga (NAsP) heterostructures pseudomorphically grown on silicon (001) substrate
  N. Koukourakis, D. A. Funke,  N. C. Gerhardt, M. R. Hofmann, B. Kunert, S. Liebich, D. Trusheim, M. Zimprich, C. Bückers, S. W. Koch, K. Volz, W. Stolz
  Conf. on Lasers and Electro-Optics (CLEO), Baltimore, USA (2011), pp. 1 - 2
  
  Toward Simultaneous Assessment of In and N in InGaAsN Alloys by Quantitative STEM-ADF Imaging
  V. Grillo, K. Müller, F. Glas, K. Volz and A. Rosenauer
  Microscopy and Microanalysis 17 (Suppl. 2) (2011), pp. 1862 - 1863
  
  Investigation of the GaP/Si Interface by High-Resolution Scanning Transmission Electron Microscopy
  A. Beyer, J. Ohlmann, M. Luysberg and K. Volz
  Microscopy and Microanalysis 17 (Suppl. 2) (2011), pp. 1390 - 1391
  
  Carrier dynamics in (ZnMg)O alloy materials
  A. Chernikov, S. Horst, M. Koch, K. Volz, S. Chatterjee, S. W. Koch, T. A. Wassner, B. Laumer, M. Eickhoff
  physica status solidi (c) 8 (4) (2011), pp. 1149 – 1152
  
  Application of transmission electron microscopy for microstructural characterization of perfluoropentacene thin films
  B. Haas, A. Beyer, W. Witte, T. Breuer, G. Witte, and K. Volz
  J. Appl. Phys. 110 (7) (2011), 073514
  
  Heat Management in High-Power Vertical-External-Cavity Surface-Emitting Lasers
  A. Chernikov, J. Herrmann, M. Koch, B. Kunert, W. Stolz, S. Chatterjee, S. W. Koch, T.-L. Wang, Y. Kaneda, J. M. Yarborough, J. Hader, J. V. Moloney
  IEEE Journal of Selected Topics in Quantum Electronics 17 (6) (2011), pp. 1772 - 1778
  
  VECSEL Optimization Using Microscopic Many-Body Physics
  J. Hader, T.-L. Wang; J. M. Yarborough, C. A. Dineen, Y. Kaneda, J. V. Moloney, B. Kunert, W. Stolz, S. W. Koch
  IEEE Journal of Selected Topics in Quantum Electronics 17 (6) (2011), pp. 1753 - 1762
  
  Band structure properties of novel B_xGa_1−xP alloys for silicon integration
  N. Hossain, T. J. C. Hosea, S. J. Sweeney, S. Liebich, M. Zimprich, K. Volz, B. Kunert, and W. Stolz
  J. Appl. Phys. 110 (6) (2011), 063101
  
  Laser operation of Ga(NAsP) lattice-matched to (001) silicon substrate
  S. Liebich, M. Zimprich, A. Beyer, C. Lange, D. J. Franzbach, S. Chatterjee, N. Hossain, S. J. Sweeney, K. Volz, B. Kunert, and W. Stolz
  Appl. Phys. Lett. 99 (7) (2011), 071109
  
  Reduced threshold current dilute nitride Ga(NAsP)/GaP quantum well lasers grown by MOVPE
  N. Hossain, S. J. Sweeney, S. Rogowsky, R. Ostendorf, J. Wagner, S. Liebich, M. Zimprich, K. Volz, B. Kunert, W. Stolz
  Electronics Letters 47 (16) (2011), pp. 931 - 933
  
  Atomic scale annealing effects on In_xGa_1-xN_yAs_1-y studied by TEM three-beam imaging
  K. Müller, M. Schowalter, A. Rosenauer, D. Hu, D. M. Schaadt, M. Hetterich, P. Gilet, O. Rubel, R. Fritz and K. Volz
  Phys. Rev. B 84 (4) (2011), 045316
  
  GaP-nucleation on exact Si (001) substrates for III/V device integration
  K. Volz, A. Beyer, W. Witte, J. Ohlmann, I. Németh, B. Kunert, W. Stolz
  Journal of Crystal Growth 315 (1) (2011), pp. 37 - 47
  
  Correlation between hetero-interface properties and photoluminescence efficiency of Ga(NAsP)/(BGa)P multi-quantum well structures on (001) Si substrate
  B. Kunert, S. Liebich, A. Beyer, R. Fritz, S. Zinnkann, K. Volz, W. Stolz
  Journal of Crystal Growth 315 (1) (2011), pp. 28 - 31
  
  Indirect in situ characterization of Si (100) substrates at the initial stage of III-V heteroepitaxy
  H. Döscher, O. Supplie, S. Brückner, T. Hannappel, A. Beyer, J. Ohlmann, K. Volz
  Journal of Crystal Growth 315 (1) (2011), pp. 16 - 21
  
  Hopping relaxation of photo-excited excitons in Ga(NAsP) bulk structure
  K. Jandieri, C. Jurecka, J. Ohlmann, A. Beyer, B. Kunert, S. D. Baranovskii, K. Volz, W. Stolz, F. Gebhard
  physica status solidi (c) 8 (1) (2011), p. 163 - 168
  
  Influence of crystal polarity on crystal defects in GaP grown on exact Si (001)
  A. Beyer, I. Németh, S. Liebich, J. Ohlmann, W. Stolz, and K. Volz
  J. Appl. Phys. 109 (8) (2011), 083529
  
  Vibrational mode and dielectric function spectra of BGaP probed by Raman scattering and spectroscopic ellipsometry
  S. Rogowsky, M. Bäumler, M. Wolfer, L. Kirste, R. Ostendorf, J. Wagner, S. Liebich, W. Stolz, K. Volz, and B. Kunert
  J. Appl. Phys. 109 (5) (2011), 053504
  
  High modal gain in Ga(NAsP)/(BGa)((As)P) heterostructures grown lattice matched on (001) silicon
  N. Koukourakis, D. A. Funke, N. C. Gerhardt, M. R. Hofmann, S. Liebich, C. Bückers, S. Zinnkann, M. Zimprich, A. Beyer, S. Chatterjee, S. W. Koch, B. Kunert, K. Volz and W. Stolz
  Proc. SPIE 7939 (2011), 793927
  
  Investigation of optical and concentration profile changes of InGaNAs/GaAs heterostructures induced by thermal annealing
  R. Imlau, K. Müller, O. Rubel, R. Fritz, M. Schowalter, K. Volz and A. Rosenauer
  Journal of Physics: Conf. Ser. 326 (1) (2011), 012038
  
  Determination of Nitrogen Concentration in Dilute GaNAs by STEM HAADF Z-Contrast Imaging
  T. Grieb, K. Müller, O. Rubel, R. Fritz, C. Gloistein, N. Neugebohrn, M. Schowalter, K. Volz and A. Rosenauer
  Journal of Physics: Conf. Ser. 326 (1) (2011), 012033
  
  TEM 3-beam study of annealing effects in InGaNAs using ab-initio structure factors for strain-relaxed supercells
  K. Müller, M. Schowalter, O. Rubel, D. Z. Hu, D. M. Schaadt, M. Hetterich, P. Gilet, R. Fritz, K. Volz and A. Rosenauer
  Journal of Physics: Conf. Ser. 326 (1) (2011), 012026
  
  Strain, composition and disorder in ADF imaging of semiconductors
  V. Grillo, K. Mueller, K. Volz, F. Glas, T. Grieb and A. Rosenauer
  Journal of Physics: Conf. Ser. 326 (1) (2011), 012006
  

• Inhalt ausklappen Inhalt einklappen 2006 - 2010

  2010
  
  Peculiarities of the photoluminescence of metastable Ga(N,As,P)/GaP quantum well structures
  C. Karcher, K. Jandieri, B. Kunert, R. Fritz, M. Zimprich, K. Volz, W. Stolz, F. Gebhard, S. D. Baranovskii, and W. Heimbrodt
  Phys. Rev. B 82 (24) (2010), 245309
  
  Characterization of solar cells by photocurrent spectroscopy and current-voltage characteristics with high spatial resolution
  M. Schwalm, C. Lange, W. W. Rühle, W. Stolz, K. Volz, and S. Chatterjee
  Optics Express 18 (6) (2010), pp. 6277 - 6287
  
  Highly polarized self-assembled chains of single layer InP/(In,Ga)P quantum dots
  A. Ugur, F. Hatami, A. N. Vamivakas, L. Lombez, M. Atatüre, K. Volz, and W. T. Masselink
  Appl. Phys. Lett. 97 (25) (2010), 253113
  
  In situ antiphase domain quantification applied on heteroepitaxial GaP growth on Si (100)
  H. Döscher, B. Kunert, A. Beyer, O. Supplie, K. Volz, W. Stolz, and T. Hannappel
  J. Vac. Sci. Technol. B 28 (4) (2010), C5H1 - C5H6
  
  Influence of spatial pump distribution on the performance of high power vertical-external-cavity surface-emitting lasers
  A. Chernikov, J. Hermann, M. Scheller, M. Koch, B. Kunert, W. Stolz, S. Chatterjee, S. W. Koch, T. L. Wang, Y. Kaneda, J. M. Yarborough, J. Hader, and J. V. Moloney
  Appl. Phys. Lett. 97 (19) (2010), 191110
  
  Predictive Microscopic Modeling of VECSELs
  J. Hader, G. Hardesty, T.-L. Wang, M. J. Yarborough, Y. Kaneda, J. V. Moloney, B. Kunert, W. Stolz, S. W. Koch
  IEEE Journal of Quantum Electronics 46 (5) (2010), pp. 810 - 817
  
  High-Power Optically Pumped Semiconductor Laser at 1040 nm
  T.-L. Wang, Y. Kaneda, J. M. Yarborough, J. Hader, J. V. Moloney, A. Chernikov, S. Chatterjee, S. W. Koch, B. Kunert, W. Stolz
  IEEE Photonics Technology Letters 22 (9) (2010), pp. 661 - 663
  
  Comparison of ultrafast carrier thermalization in Ga_xIn_1-xAs and Ge quantum wells
  C. Lange, N. S. Köster, S. Chatterjee, H. Sigg, D. Chrastina, G. Isella, H. von Känel, B. Kunert, and W. Stolz
  Phys. Rev. B 81 (4) (2010), 045320
  
  MOVPE Growth of III-V Solar Cells on Silicon in 300 mm Closed Coupled Showerhead Reactor
  T. Roesener, H. Döscher, A. Beyer, S. Brückner, V. Klinger, A. Wekkeli, P. Kleinschmidt, C. Jurecka, J. Ohlmann, K. Volz, W. Stolz, T. Hannappel, A. W. Bett, F. Dimroth
  Proc. 25^th European Conf. "Photovoltaic Solar Energy", Valencia (2010), pp. 964 - 968
  
  Investigation of carrier dynamics in Zn_1-xMg_xO by time-resolved photoluminescence
  A. Chernikov, S. Horst, M. Koch, K. Volz, S. Chatterjee, S. W. Koch, T. A. Wassner, B. Laumer and M. Eickhoff
  Journal of Luminescence 130 (11) (2010), pp. 2256 - 2259
  
  Effect of bonding and static atomic displacements on composition quantification in In_xGa_1-xN_yAs_1-y
  K. Müller, M. Schowalter, A. Rosenauer, O. Rubel, K. Volz
  Phys. Rev. B 81 (2010), 075315
  
  Novel Ga(NAsP)-Based Heterostructures for the Integration of Optoelectronic Functionalities on (001) Si-Substrate
  B. Kunert, K. Volz and W. Stolz
  ECS Transactions 28 (5) (2010), pp. 219 - 226
  
  
  2009
  
  Optical properties of Ga(NAsP) lattice matched to Si
  C. Karcher, H. Grüning, M. Güngerich, P. J. Klar, B. Kunert, K. Volz, W. Stolz, W. Heimbrodt
  physica status solidi (c) 6 (12) (2009), pp. 2638 - 2643
  
  Gain characteristics and lasing of GA(NAsP) multi-quantum well structures
  C. Lange, S. Chatterjee, B. Kunert, K. Volz, W. Stolz, W. W. Rühle, N. C. Gerhardt, M. R. Hofmann
  physica status solidi (c) 6 (2) (2009), pp. 576 - 578
  
  Performance changes of a vertical-external-cavity surface-emitting laser by an intra-cavity anti-reflex-coating
  S. Horst, S. Chatterjee, W. W. Rühle, W. Diehl, W. Stolz, E. Kühn, A. Thränhardt, S. W. Koch, P. Brick
  physica status solidi (c) 6 (2) (2009), pp. 572 - 575
  
  Ga(AsSb)/GaAs/(AlGa)As heterostructures: additional hole-confinement due to quantum islands
  S. Horst, S. Chatterjee, K. Hantke, P. J. Klar, I. Németh, W. Stolz, K. Volz, C. Bückers, A. Thränhardt, S. W. Koch, W. Rühle, S. R. Johnson, J.-B. Wang, Y.-H. Zhang
  physica status solidi (c) 6 (2) (2009), pp. 411 - 414
  
  Continuous-wave single-frequency 295 nm laser source by a frequency-quadrupled optically pumped semiconductor laser
  Y. Kaneda, M. Fallahi, J. Hader, J. V. Moloney, S. W. Koch, B. Kunert, and W. Stolz
  Optics Letters 34 (22) (2009), pp. 3511 - 3513
  
  Fluctuations of the peak current of tunnel diodes in multi-junction solar cells
  K. Jandieri, S. D. Baranovskii, W. Stolz, F. Gebhard, W. Guter, M. Hermle and A. W. Bett
  J. Phys. D: Appl. Phys. 42 (15) (2009), 155101
  
  MOVPE growth of dilute nitride III/V semiconductors using all liquid metalorganic precursors
  K. Volz, J. Koch, F. Höhnsdorf, B. Kunert, W. Stolz
  Journal of Crystal Growth 311 (8) (2009), pp. 2418 - 2426
   
  Band anti-crossing and carrier recombination in dilute nitride phosphide based lasers and light emitting diodes
  J. Chamings, S. Ahmed, A. R. Adams, S. J. Sweeney, V. A. Odnoblyudov, C. W. Tu, B. Kunert, W. Stolz
  physica status solidi (b) 246 (3) (2009), pp. 527 - 531
  
  
  2008
  
  Analytical theory for favorable defects in tunnel diodes
  K. Jandieri, S. D. Baranovskii, W. Stolz, and F. Gebhard
  J. Appl. Phys. 104 (11) (2008), 114511
  
  Resonant electron tunneling through defects in GaAs tunnel diodes
  K. Jandieri, S. D. Baranovskii, O. Rubel, W. Stolz, F. Gebhard, W. Guter, M. Hermle, and A. W. Bett
  J. Appl. Phys. 104 (9) (2008), 094506
  
  5-W Yellow Laser by Intracavity Frequency Doubling of High-Power Vertical-External-Cavity Surface-Emitting Laser
  M. Fallahi, L. Fan, Y. Kaneda, C. Hessenius, J. Hader, H. Li, J. V. Moloney, B. Kunert, W. Stolz, S. W. Koch, J. Murray, R. Bedford
  IEEE Photonics Technology Letters 20 (20) (2008), pp. 1700 - 1702
  
  Local structure of Mn in hydrogenated Ga_1-xMn_xAs
  C. Bihler, G. Ciatto, H. Huebl, G. Martinez-Criado, P. J. Klar, K. Volz, W. Stolz, W. Schoch, W. Limmer, F. Filippone, A. Amore Bonapasta, and M. S. Brandt
  Phys. Rev. B 78 (23) (2008), 235208
  
  In situ verification of single-domain III-V on Si (100) growth via metal-organic vapor phase epitaxy
  H. Döscher, T. Hannappel, B. Kunert, A. Beyer, K. Volz, and W. Stolz
  Appl. Phys. Lett. 93 (17) (2008), 172110
  
  Si (001) surface preparation for the antiphase domain free heteroepitaxial growth of GaP on Si substrate
  B. Kunert, I. Németh, S. Reinhard, K. Volz, and W. Stolz
  Thin Solid Films 517 (1) (2008), pp. 140 - 143
  
  Influence of GaInP ordering on the electronic quality of concentrator solar cells
  I. Garcia, I. Rey-Stolle, C. Algora, W. Stolz and K. Volz
  Journal of Crystal Growth 310 (23) (2008), pp. 5209 - 5213
  
  Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers
  J. Chamings, A. R. Adams, S. J. Sweeney, B. Kunert, K. Volz, and W. Stolz
  Appl. Phys. Lett. 93 (10) (2008), 101108
  
  Modeling the compositional dependence of electron diffraction in dilute GaAs- and GaP-based compound semiconductors
  O. Rubel, I. Németh, W. Stolz, and K. Volz
  Phys. Rev. B 78 (7) (2008), 075207
  
  Direct structural evidence of the change in N-III bonding in (GaIn)(NAs) before and after thermal annealing
  K. Volz, T. Torunski, O. Rubel, and W. Stolz
  J. Appl. Phys. 104 (5) (2008), 053504
  
  Monolithic integration of Ga(NAsP)/(BGa)P multi-quantum well structures on (001) silicon substrate by MOVPE
  B. Kunert, S. Zinnkann, K. Volz, and W. Stolz
  Journal of Crystal Growth 310 (23) (2008), pp. 4776 - 4779
  
  Ways to quantitatively detect antiphase disorder in GaP films grown on Si (001) by transmission electron microscopy
  I. Németh, B. Kunert, W. Stolz, K. Volz
  Journal of Crystal Growth 310 (23) (2008), pp. 4763 - 4767
  
  Doping, Electrical Properties and Solar Cell Application of GaInNAs
  K. Volz, W. Stolz, J. Teubert, P. J. Klar, W. Heimbrodt, F. Dimroth, C. Baur, und A. W. Bett
  in "Dilute III-V Nitride Semiconductors and Material Systems: Physics and Technolgy", Ed. A. Erol
  Springer Series in Materials Science 105 (2008), pp. 369 - 404
  
  Properties and Laser Applications of the GaP-based (GaNAsP)-Material System for Integration to Si Substrates
  B. Kunert, K. Volz, und W. Stolz
  in "Dilute III-V Nitride Semiconductors and Material Systems: Physics and Technology", Ed. A. Erol
  Springer Series in Materials Science 105 (2008), pp. 317 - 341
  
  Optimization of annealing conditions of (GaIn)(NAs) for solar cell applications
  K. Volz, D. Lackner, I. Németh, B. Kunert, W. Stolz, C. Baur, F. Dimroth, A. W. Bett
  Journal of Crystal Growth 310 (7 - 9) (2008), pp. 2222 - 2228
  
  Heteroepitaxy of GaP on Si: Correlation of morphology, anti-phase-domain structure and MOVPE growth conditions
  I. Németh, B. Kunert, W. Stolz, K. Volz
  Journal of Crystal Growth 310 (7 - 9) (2008), pp. 1595 - 1601
  
  Resonant tunneling as a dominant transport mechanism in n-GaAs/p-GaAs tunnel diodes
  K. Jandieri, S. D. Baranovskii, O. Rubel, W. Stolz, F. Gebhard, W. Guter, M. Hermle, and A. W. Bett
  Appl. Phys. Lett. 92 (24) (2008), 243504
  
  Hole confinement in quantum islands in Ga(AsSb)/GaAs/(AlGa)As heterostructures
  S. Horst, S. Chatterjee, K. Hantke, P. J. Klar, I. Németh, W. Stolz, K. Volz, C. Bückers, A. Thränhardt, S. W. Koch, W. Rühle, S. R. Johnson, J.-B. Wang, Y.-H. Zhang
  Appl. Phys. Lett. 92 (16) (2008), 161101
  
  A GaAs metalorganic vapor phase epitaxy growth process to reduce Ge outdiffusion from the Ge substrate
  B. Galiana, I. Rey-Stolle, C. Algora, K. Volz, and W. Stolz
  Appl. Phys. Lett. 92 (15) (2008), 152102
  
  Influence of chirp on the femtosecond excitation of a semiconductor microcavity laser
  E. Kühn, A. Thränhardt, S. W. Koch, W. Stolz, S. Chatterjee, C. Lange, W. W. Rühle, W. Wohlleben, and M. Motzkus
  Appl. Phys. Lett 92 (1) (2008), 011107
  
  Annealing experiments of the GaP based dilute nitride Ga(NAsP)
  B. Kunert, D. Trusheim, V. Voßebürger, K. Volz, W. Stolz
  physica status solidi (a) 205 (1) (2008), pp. 114 - 119
  
  Photoluminescence under magnetic field and hydrostatic pressure for probing the electronic properties of GaAsN
  A. Polimeni, G. Pettinari, R. Trotta, F. Masia, M. Felici, M. Capizzi, A. Lindsay, E. P. O'Reilly, T. Niebling, W. Stolz, P. J. Klar, F. Martelli, S. Rubini
  physica status solidi (a) 205 (1) (2008), pp. 107 - 113
  
  Optical bistability and spatial resonator solitons based on exciton-polariton nonlinearity
  Y. Larionova, W. Stolz, and C. O. Weiss
  Optics Letters 33 (4) (2008), pp. 321 - 323
  
  Zero-phonon lines of nitrogen-cluster states in GaN_xAs_1-x:H identified by time-resolved photoluminiscence
  K. Hantke, S. Horst, S. Chatterjee, P. J. Klar, K. Volz, W. Stolz, W. W. Rühle, F. Masia, G. Pettinari, A. Polimeni and M. Capizzi
  Journal of Materials Science 43 (12) (2008), pp. 4344 - 4347
  
  Exact Solution for Hopping Dissociation of Germinate Electron-Hole Pairs in a Disordered Chain
  O. Rubel, S. D. Baranovskii, W. Stolz, and F. Gebhard
  Phys. Rev. Lett. 100 (19) (2008), 196602
  
  Spectral and time dependences of the energy transfer of bound optical excitations in GaP(N)
  T. Niebling, O. Rubel, W. Heimbrodt, W. Stolz, S. D. Baranovskii, P. J. Klar and J. F. Geisz
  Journal of Physics: Condensed Matter 20 (1) (2008), 015217
  
  Role of strain and properties of N clusters at the onset of the alloy limit in GaAs_1−xN_x
  A. Polimeni, F. Masia, G. Pettinari, R. Trotta, M. Felici, M. Capizzi, A. Lindsay, E. P. O’Reilly, T. Niebling, W. Stolz and P. J. Klar
  Phys. Rev. B 77 (15) (2008), 155213
  
  Antiphase Boundries in GaAs/Ge and GaP/Si
  I. Németh, B. Kunert, W. Stolz und K. Volz
  in "Microscopy of Semiconducting Materials 2007" Eds. P. A. Midgley, A. G. Cullis, Springer
  Springer Proceedings in Physics 120 (2) (2008), pp. 107 - 110
  
  
  2007
  
  Excitons bound to nitrogen pairs in GaAs as seen by photoluminescence of high spectral and spatial resolution
  D. Karaiskaj, A. Mascarenhas, J. F. Klem, K. Volz, W. Stolz, M. Adamcyk, T. Tiedje
  Phys. Rev. B 76 (12) (2007), 125209
  
  Highly strained InGAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm
  L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. W. Koch, J. T. Murray, and R. Bedford
  Appl. Phys. Lett. 91 (13) (2007), 131114
  
  Kinetic effects in recombination of optical excitations in disordered quantum heterostructures: Theory and experiment
  O. Rubel, S. D. Baranovskii, K. Hantke, B. Kunert, W. W. Rühle, P. Thomas, K. Volz, W. Stolz
  Journal of Luminescence 127 (2) (2007), pp. 285 - 290
  
  Volatile Imido-Hydrazido Compounds of the Refractory Metals Niobium, Tantalum, Molybdenum, and Tungsten
  D. Gaess, K. Harms, M. Pokoj, W. Stolz, and J. Sundermeyer
  Inorg. Chem. 46 (16) (2007), pp. 6688 - 6701
  
  Low threshold 1260 nm (GaIn)(NAs) semiconductor disk laser
  W. Diehl, P. Brick, B. Kunert, S. Reinhard, K. Volz, and W. Stolz
  Appl. Phys. Lett. 91 (7) (2007), 071103
  
  Spectral dependence of the photoluminescence decay in disordered semiconductors
  O. Rubel, W. Stolz, and S. D. Baranovskii
  Appl. Phys. Lett. 91 (2) (2007), 021903
  
  Annealing effects on the nanoscale indium and nitrogen distribution in Ga(NAs) and (GaIn)(NAs) quantum wells
  K. Volz, T. Torunski, O. Rubel, W. Stolz, P. Kruse, D. Gerthsen, M. Schowalter, and A. Rosenauer
  J. Appl. Phys. 102 (8) (2007), 083504
  
  Microstructural analysis of Ga(NAs)/GaP heterostructures
  I. Németh, T. Torunski, B. Kunert, W. Stolz, and K. Volz
  J. Appl. Phys. 101 (12) (2007), 123524
  
  Dynamic behavior of 1040 nm semiconductor disk lasers on a nanosecond time scale
  W. Diehl, P. Brick, S. Chatterjee, S. Horst, K. Hantke, W. W. Rühle, W. Stolz, A. Thränhardt, and S. W. Koch
  Appl. Phys. Lett. 90 (24) (2007), 241102
  
  Linearly polarized dual-wavelength vertical-external-cavity surface-emitting laser
  L. Fan, M. Fallahi, J. Hader, A. R. Zakharian, J. V. Moloney, W. Stolz, S. W. Koch, R. Bedford and J. T. Murray
  Appl. Phys. Lett. 90 (18) (2007), 181124
  
  Material Development for Improved 1 eV (GaIn)(NAs) Solar Cell Structures
  K. Volz, T. Torunski, D. Lackner, O. Rubel, W. Stolz, C. Baur, S. Müller, F. Dimroth, and A. W. Bett
  Journal of Solar Energy Engineering - Transactions of the ASME 129 (3) (2007), pp. 266 - 271
  
  Extended Tunability in a Two-Chip VECSEL
  L. Fan, M. Fallahi, A. R. Zakharian, J. Hader, J. V. Moloney, R. Bedford, J. T. Murray, W. Stolz, S. W. Koch
  IEEE Photonics Technology Letters 19 (8) (2007), pp. 544 - 546
  
  Dilute nitride Ga(NAsP)/GaP-heterostructures: toward a material development for novel optoelectronic functionality on Si-substrate
  B. Kunert, K. Volz, W. Stolz
  physica status solidi (b) 244 (8) (2007), pp. 2730 - 2739
  
  Silicon carbide and boron carbide thin films formed by plasma immersion ion implantation of hydrocarbon gases
  W. Ensinger, G. Kraft, F. Sittner, K. Volz, K. Baba and R. Hatada
  Surface and Coatings Technology 201 (19 - 20) (2007), pp. 8366 - 8369
  
  Diamond-like carbon films formed by hydrocarbon plasma immersion ion implantation with methane/toluene mixtures
  W. Ensinger, K. Volz, K. Baba, R. Hatada
  Nucl. Instr. Meth. Phys. Res. B 257 (2007), pp. 692 - 695
  
  Influence of annealing on the optical and structural properties of dilute N-containing III/V semiconductor heterostructures
  K. Volz, J. Koch, B. Kunert, I. Németh, W. Stolz
  Journal of Crystal Growth 298 (2007), pp. 126 - 130
  
  MOVPE growth conditions of the novel direct band gap, diluted nitride Ga(NasP) material system pseudomorphically strained on GaP-substrate
  B. Kunert, K. Volz, J. Koch, W. Stolz
  Journal of Crystal Growth 298 (2007), pp. 121 - 125
  
  Morphology of interior interfaces in the novel dilute nitride Ga(NAsP)/GaP material system
  S. Oberhoff, B. Kunert, T. Torunski, K. Volz, W. Stolz
  Journal of Crystal Growth 298 (2007), pp. 98 - 102
  
  Hydrostatic pressure experiments on dilute nitride alloys
  P. J. Klar, J. Teubert, M. Güngerich, T. Niebling, H. Grüning, W. Heimbrodt, K. Volz, W. Stolz, A. Polimeni, M. Capizzi, E. P. O'Reilly, A. Lindsay, M. Galluppi, L. Geelhaar, H. Riechert, S. Tomić
  physica status solidi (b) 244 (1) (2007), pp. 24 - 31
  
  Electron Mass in Dilute Nitrides and its Anomalous Dependence on Hydrostatic Pressure
  G. Pettinari, A. Polimeni, F. Masia, R. Trotta, M. Felici, M. Capizzi, T. Niebling, W. Stolz, and P. J. Klar
  Phys. Rev. Lett. 98 (2007), 146402
  
  
  2006
  
  Multichip vertical-external-cavity surface-emitting lasers: a coherent power scaling scheme
  L. Fan, M. Fallahi, J. Hader, A. R. Zakharian, J. V. Moloney, J. T. Murray, R. Bedford, W. Stolz, and S. W. Koch
  Optics Letters 31 (24) (2006), pp. 3612 - 3614
  
  Influence of nitrogen-cluster states on the gyromagnetic factor of electrons in GaAs_1-xN_x
  G. Pettinari, F. Masia, A. Polimeni, M. Felici, A. Frova, M. Capizzi, A. Lindsay, E. P. O'Reilly, P. J. Klar, W. Stolz, G. Bais, M. Piccin, S. Rubini, F. Martelli, and A. Franciosi
  Phys. Rev. B 74 (24) (2006), 245202
  
  Model of annealing-induced short-range order effects in (GaIn)(NP) alloys
  O. Rubel, B. Kunert, S. D. Baranovskii, F. Grosse, K. Volz, and W. Stolz
  Phys. Rev. B 74 (19) (2006), 195206
  
  Compositional disorder in GaAs_1-xN_x:H investigated by photoluminescence
  M. Felici, R. Trotta, F. Masia, A. Polimeni, A. Miriametro, M. Capizzi, P. J. Klar, and W. Stolz
  Phys. Rev. B 74 (8) (2006), 085203
  
  Optimizing the performance of a vertical-cavity surface-emitting laser
  S. Chatterjee, W. Wohlleben, C. Lange, W. Stolz, M. Motzkus, and W. W. Rühle
  Appl. Phys. Lett. 89 (15) (2006), 151122
  
  High brightness spectral beam combination of high-power vertical-external-cavity surface-emitting lasers
  Y. Kaneda, L. Fan, T.-C. Hsu, N. Peyghambarian, M. Fallahi, A. R. Zakharian, J. Hader, J. V. Moloney, W. Stolz, S. Koch, R. Bedford, A. Sevian, L. Glebov
  IEEE Photonics Technology Letters 18 (17) (2006), pp. 1795 -1797
  
  Tuning the magnetic properties of GaAs:Mn/MnAs hybrids via the MnAs cluster shape
  H.-A. Krug von Nidda, T. Kurz, A. Loidl, Th. Hartmann, P. J. Klar, W. Heimbrodt, M. Lampalzer, K. Volz and W. Stolz
  Journal of Physics: Condensed Matter 18 (26) (2006), pp. 6071 - 6083
  
  Excitation transfer between extended band states and N-related localized states in GaP_1-xN_x with x up to 1%
  T. Niebling, T. Lapp, J. Kampmann, P. J. Klar, W. Heimbrodt, B. Kunert, K. Volz, W. Stolz
  Physica E 32 (1 - 2) (2006), pp. 222 - 225
  
  Competition of N-passivation and Te-passivation in hydrogenation of Te-doped (Ga,In)(N,As)
  J. Teubert, P. J. Klar, W. Heimbrodt, K. Volz, W. Stolz, A. Polimeni, M. Capizzi
  Physica E 32 (1 - 2) (2006), pp. 218 - 221
  
  Lasing in optically pumped Ga(NAsP)/GaP heterostructures
  S. Borck, S. Chatterjee, B. Kunert, K. Volz, W. Stolz, J. Heber, W. W. Rühle, N. C. Gerhardt, and M. R. Hofmann
  Appl. Phys. Lett. 89 (3) (2006), 031102
   
  Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by intracavity frequency doubling
  L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz
  Appl. Phys. Lett. 88 (25) (2006), 251117
  
  Luminescence investigations of the GaP-based dilute nitride Ga(NAsP) material system
  B. Kunert, K. Volz, I. Németh, W. Stolz
  Journal of Luminescence 121 (2) (2006), pp. 361 - 364
  
  Model of temperature quenching of photoluminescence in disordered semiconductors and comparison to experiment
  O. Rubel, S. D. Baranovskii, K. Hantke, B. Kunert, W. W. Rühle, P. Thomas, K. Volz, and W. Stolz
  Phys. Rev. B 73 (23) (2006), 233201
  
  Non-radiative recombination of optical excitations in (GaIn)(NAs) quantum wells
  O. Rubel, S. D. Baranovskii, K. Hantke, W. W. Rühle, P. Thomas, K. Volz, W. Stolz
  physica status solidi (c) 3 (7) (2006), pp. 2481 - 2484
  
  Near room temperature electrical injection lasing for dilute nitride Ga(NAsP)/GaP quantum-well structures grown by metal organic vapour phase epitaxy
  B. Kunert, A. Klehr, S. Reinhard, K. Volz, W. Stolz
  Electronics Letters 42 (10) (2006), pp. 601 - 603
  
  Direct-band-gap Ga(NAsP)-material system pseudomorphically grown on GaP substrate
  B. Kunert, K. Volz, J. Koch, and W. Stolz
  Appl. Phys. Lett. 88 (18) (2006), 182108
  
  Nanoanalytical quantification of the nitrogen content in Ga(NAs)/GaAs by using transmission electron microscopy in combination with refined structure factor calculation
  K. Volz, O. Rubel, T. Torunski, S. D. Baranovskii, and W. Stolz
  Appl. Phys. Lett. 88 (8) (2006), 081910
  
  Tunable high-power high-brightness linearly polarized vertical-external-cavity surface-emitting lasers
  L. Fan, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, A. R. Zakharian, J. Hader, J. V. Moloney, W. Stolz, and S. W. Koch
  Appl. Phys. Lett. 88 (2) (2006), 021105
  
  Interaction between conduction band edge and nitrogen states probed by carrier effective-mass measurements in GaAs_1-xN_x
  F. Masia, G. Pettinari, A. Polimeni, M. Felici, A. Miriametro, M. Capizzi, A. Lindsay, S. B. Healy, E. P. O'Reilly, A. Cristofoli, G. Bais, M. Piccin, S. Rubini, F. Martelli, A. Franciosi, P. J. Klar, K. Volz, and W. Stolz
  Phys. Rev. B 73 (7) (2006), 073201
  
  Optical activity of a single MnAs Cluster: Birefringence or Kerr effect
  M. Leuschner, P. J. Klar, W. Heimbrodt, W. W. Rühle, S. Hara, W. Stolz, K. Volz, T. Kurz, A. Loidl, H.-A. Krug von Nidda
  Journal of Magnetism and Magnetic Materials 301 (2) (2006), pp. 478 - 488
  
  Correlation of band formation and local vibrational mode structure of Ga_0.95Al_0.05As_1-xN_x with 0 ≤ x ≤ 0.03
  M. Güngerich, P. J. Klar, W. Heimbrodt, K. Volz, K. Köhler, J. Wagner, A. Polimeni, M. Capizzi, H. Ch. Alt, and Y. V. Gomeniuk
  physica status solidi (c) 3 (3) (2006), pp. 619 - 622
  
  First demonstration of electrical injection lasing in the novel dilute nitride Ga(NAsP)/GaP-material system
  B. Kunert, S. Reinhard, J. Koch, M. Lampalzer, K. Volz, W. Stolz
  physica status solidi (c) 3 (3) (2006), pp. 614 - 618
  

• Inhalt ausklappen Inhalt einklappen 2001 - 2005

  2005
  
  Carrier relaxation dynamics in annealed and hydrogenated (GaIn)(NAs)/GaAs quantum wells
  K. Hantke, J. D. Heber, S. Chatterjee, P. J. Klar, K. Volz, W. Stolz, W. W. Rühle, A. Polimeni, and M. Capizzi
  Appl. Phys. Lett. 87 (25) (2005), 252111
  
  Room-temperature threshold reduction in vertical-cavity surface-emitting lasers by injection of spin-polarized electrons
  J. Rudolph, S. Döhrmann, D. Hägele, M. Oestreich, and W. Stolz
  Appl. Phys. Lett. 87 (24) (2005), 241117
  
  Bound-to-bound and bound-to-free transitions in surface photovoltage spectra: determination of the band offsets for In_xGa_1-xAs and In_xGa_1-xAs_1-yN_y quantum wells
  M. Galluppi, L. Geelhaar, H. Riechert, M. Hetterich, A. Grau, S. Birner, and W. Stolz
  Phys. Rev. B 72 (15) (2005), 155324
  
  Quantitative description of disorder parameters in (GaIn)(NAs) quantum wells from the temperature-dependent photoluminescence spectroscopy
  O. Rubel, M. Galluppi, S. D. Baranovskii, K. Volz, L. Geelhaar, H. Riechert, P. Thomas, and W. Stolz
  J. Appl. Phys. 98 (6) (2005), 063518
  
  Spin-dependent localization effects in GaAs:Mn/MnAs granular paramagnetic-ferromagnetic hybrids at low temperatures
  C. Michel, C. H. Thien, S. Ye, P. J. Klar, W. Heimbrodt, S. D. Baranovskii, P. Thomas, M. Lampalzer, K. Volz, W. Stolz, B. Goldlücke
  Superlattices and Microstructures 37 (5) (2005), pp. 321 - 326
  
  Over 3 W high-efficiency vertical-external-cavity surface-emitting lasers and application as efficient fiber laser pump sources
  L. Fan, M. Fallahi, J. Hader, A. R. Zakharian, M. Kolesik, J. V. Moloney, T. Qiu, A. Schülzgen, N. Peyghambarian, W. Stolz, S. W. Koch, and J. T. Murray
  Appl. Phys. Lett. 86 (21) (2005), 211116
  
  FULLSPECTRUM: a new PV wave making more efficient use of the solar spectrum
  A. Luque, A. Martí, A. Bett, V. M. Andreev, C. Jaussaud, J. A. M. van Roosmalen, J. Alonso, A. Räuber, G. Strobl, W. Stolz, C. Algora, B. Bitnar, A. Gombert, C. Stanley, P. Wahnon, J. C. Conesa, W. G. J. H. M. van Sark, A. Meijerink, G. P. M. van Klink, K. Barnham, R. Danz, T. Meyer, I. Luque-Heredia, R. Kenny, C. Christofides, G. Sala, P. Benítez
  Solar Energy Materials and Solar Cells 87 (1 - 4) (2005), pp. 467 - 479
  
  Time-resolved photoluminescence of type-I and type-II (GaIn)As/Ga(NAs) heterostructures
  K. Hantke, J. D. Heber, C. Schlichenmaier, A. Thränhardt, T. Meier, B. Kunert, K. Volz, W. Stolz, S. W. Koch, and W. W. Rühle
  Phys. Rev. B 71 (16) (2005), 165320
  
  Vibrational properties of GaAs_0.915N_0.085 under hydrostatic pressures up to 20 GPa
  M. Güngerich, P. J. Klar, W. Heimbrodt, J. Koch, W. Stolz, M. P. Halsall, and P. Harmer
  Phys. Rev. B 71 (7) (2005), 075201
  
  High-power optically pumped VECSEL using a double-well resonant periodic gain structure
  L. Fan, J. Hader, M. Schillgalies, M. Fallahi, A. R. Zakharian, J. V. Moloney, R. Bedford, J. T. Murray, S. W. Koch, W. Stolz
  IEEE Photonics Technology Letters 17 (9) (2005), pp. 1764 - 1766
  
  Type I-type II transition in InGaAs-GaNAs heterostructures
  C. Schlichenmaier, H. Grüning, A. Thränhardt, P. J. Klar, B. Kunert, K. Volz, W. Stolz, W. Heimbrodt, T. Meier, S. W. Koch, J. Hader, and J. V. Moloney
  Appl. Phys. Lett. 86 (8) (2005), 081903
  
  On the theoretical description of photoluminescence in disordered quantum structures
  O. Rubel, S. D. Baranovskii, K. Hantke, J. D. Heber, J. Koch, P. Thomas, J. M. Marshall, W. Stolz, W. W. Rühle
  Journal of Optoelectronics and Advanced Materials 7 (1) (2005), pp. 115 - 120
  
  Detection of nanometer-sized strain fields in (GaIn)(NAs) alloys by specific dark field transmission electron microscopic imaging
  K. Volz, T. Torunski, and W. Stolz
  J. Appl. Phys. 97 (1) (2005), 014306
  
  Magnetic Interactions in Granular Paramagnetic–Ferromagnetic GaAs: Mn/MnAs Hybrids
  W. Heimbrodt, P. J. Klar, S. Ye, M. Lampalzer, C. Michel, S. D. Baranovskii, P. Thomas und W. Stolz
  Journal of Superconductivity 18 (3) (2005), pp. 315 - 320
  
  
  2004
  
  Tuning of the average p-d exchange in (Ga,Mn)As by modification of the Mn electronic structure
  Th. Hartmann, S. Ye, P. J. Klar, W. Heimbrodt, M. Lampalzer, W. Stolz, T. Kurz, A. Loidl, H.-A. Krug von Nidda, D. Wolverson, J. J. Davies, H. Overhof
  Phys. Rev. B 70 (23) (2004), 233201
  
  Influence of N on the electron transport in (Ga,In)(N,As) probed by magnetotransport under hydrostatic pressure
  J. Teubert, P. J. Klar, W. Heimbrodt, K. Volz, W. Stolz
  IEE Proceedings - Optoelectronics 151 (5) (2004), pp. 357 - 360
  
  Te-co-doping experiments in ferromagnetic Mn(Ga)As/GaAs-cluster hybrid layers by MOVPE
  M. Lampalzer, S. Nau, C. Pietzonka, W. Treutmann, K. Volz, W. Stolz
  Journal of Crystal Growth 272 (1 - 4) (2004), pp. 772 - 777
  
  MOVPE growth experiments of the novel (GaIn)(NP)/GaP material system
  B. Kunert, J. Koch, T. Torunski, K. Volz, W. Stolz
  Journal of Crystal Growth 272 (1 - 4) (2004), pp. 753 - 759
  
  Specific structural and compositional properties of (GaIn)(NAs) and their influence of optoelectronic device performance
  K. Volz, T. Torunski, B. Kunert, O. Rubel, S. Nau, S. Reinhard, W. Stolz
  Journal of Crystal Growth 272 (1 - 4) (2004), pp. 739 - 747
  
  Comparison of dilute nitride growth on a single- and 8x4-inch multiwafer MOVPE system for solar cell applications
  F. Dimroth, C. Baur, A. W. Bett, K. Volz, W. Stolz
  Journal of Crystal Growth 272 (1 - 4) (2004), pp. 726 - 731
  
  MOVPE growth of (AlGaIn)P/(GaIn)P heterostructures using TBP
  N. El-Zein, A. Greiling, J. Koch, W. Stolz, S. Reinhard, B. T. McDermott
  Journal of Crystal Growth 272 (1 - 4) (2004), pp. 609 - 614
  
  Columnar [001]-oriented nitrogen order in Ga(NAs) and (GaIn)(NAs) alloys
  O. Rubel, K. Volz, T. Torunski, S. D. Baranovskii, F. Grosse, and W. Stolz
  Appl. Phys. Lett. 85 (24) (2004), 5908 - 5910; erratum Appl. Phys. Lett. 87 (4) Errata (2005), 049903
  
  Tunable variation of the electron effective mass and exciton radius in hydrogenated GaAs_1-xN_x
  A. Polimeni, G. Baldassarri Höger von Högersthal, F. Masia, A. Frova, M. Capizzi, S. Sanna, V. Fiorentini, P. J. Klar, and W. Stolz
  Phys. Rev. B 69 (4) (2004), 041201 (R)
  
  Enhanced weak Anderson localization phenomena in the magnetoresistance of n-type (Ga,In)(N,As)
  J. Teubert, P. J. Klar, W. Heimbrodt, K. Volz, W. Stolz, P. Thomas, G. Leibiger, and V. Gottschalch
  Appl. Phys. Lett. 84 (5) (2004), pp. 747 - 749
  
  Tuning of the electron effective mass and exciton wavefunction size in GaAs_1-xN_x
  A. Polimeni, F. Masia, G. Baldassarri Höger von Högersthal, A. Frova, M. Capizzi, S. Sanna, V. Fiorentini, P. J. Klar, W. Stolz
  Physica E 21 (2 - 4) (2004), pp. 747 - 751
  
  Evidence for a type I to type II transition in (Ga,In)(N,As)/Ga(N,As) quantum well structures
  H. Grüning, P. J. Klar, W. Heimbrodt, S. Nau, B. Kunert, K. Volz, W. Stolz, G. Weiser
  Physica E 21 (2 - 4) (2004), pp. 666 - 670
  
  Cluster formation and magnetic properties of Mn-incorporated (GaIn)As/InP layers grown by metal-organic vapor phase epitaxy
  S. Hara, M. Lampalzer, T. Torunski, K. Volz, W. Treutmann and W. Stolz
  Journal of Crystal Growth 261 (2 - 3) (2004), pp. 330 - 335
  
  Hopping relaxation of excitons in GaInNAs/GaNAs quantum wells
  H. Grüning, K. Kohary, S. D. Baranovskii, O. Rubel, P. J. Klar, A. Ramakrishnan, G. Ebbinghaus, P. Thomas, W. Heimbrodt, W. Stolz, W. W. Rühle
  physica status solidi (c) 1 (1) (2004), pp. 109 - 112
  
  Correlation of the structural and electronic properties of (Ga,In)(N,As) based heterostructures
  P. J. Klar and K. Volz
  Journal of Physics: Condensed Matter 16 (31) (2004), S 3053
  
  
  2003
  
  Anisotropy of the magnetotransport in (Ga,Mn)As/MnAs paramagnetic-ferromagnetic hybrid structures
  S. Ye, P. J. Klar, Th. Hartmann, W. Heimbrodt, M. Lampalzer, S. Nau, T. Torunski, W. Stolz, T. Kurz, H.-A. Krug von Nidda, and A. Loidl
  Appl. Phys. Lett. 83 (19) (2003), pp. 3927 - 3929
  
  Monitoring the non-parabolicity of the conduction band in GaN_0.018As_0.982/GaAs quantum wells
  P. J. Klar, H. Grüning, W. Heimbrodt, J. Koch, W. Stolz, S. Tomić, E. P. O'Reilly
  Solid-State Electronics 47 (3) (2003), pp. 437 - 441
  
  Hydrogen-related effects in dilute nitrides
  A. Polimeni, F. Masia, M. Felici, G. Baldassarri Höger von Högersthal, M. Bissiri, A. Frova, M. Capizzi, P. J. Klar, W. Stolz, I. A. Buyanova, W. M. Chen, H. P. Xin, C. W. Tu
  Physica B: Condensed Matter 340 - 342 (2003), pp. 371 - 376
  
  Magneto-Optical Spectroscopy on (Ga,Mn)As-Based Layers - Correlation Between the p-d-Exchange Integral and Doping
  T. Hartmann, S. Ye, T. Henning, P. J. Klar, M. Lampalzer, W. Stolz und W. Heimbrodt
  Journal of Superconductivity 16 (2) (2003), pp. 423 - 426
  
  Signatures of biexcitons and triexcitons in coherent non-degenerate semiconductor optics
  T. Meier, C. Sieh, E. Finger, W. Stolz, W. W. Rühle, P. Thomas, S. W. Koch, A. D. Wieck
  physica status solidi (b) 238 (3) (2003), pp. 537 - 540
  
  Autocorrelation spectroscopy on single GaInAs/GaAs quantum wells
  U. Neuberth, G. von Freymann, M. Wegener, S. Nau, W. Stolz
  physica status solidi (b) 238 (3) (2003), pp. 498 - 501
  
  Development of a 1.0 eV (GaIn)(NAs) solar cell
  C. Baur, A. W. Bett, F. Dimroth, S. van Riesen, B. Kunert, M. Traversa, K. Volz, W. Stolz
  Proc. of 3^rd World Conf. "Photovoltaic Energy Conversion", Osaka, Japan 1 (2003), pp. 677 - 680
  
  Correlation between lasing properties and band alignment of edge emitting lasers with (Ga,In)(N,As)/Ga(N,As) active regions
  H. Grüning, P. J. Klar, W. Heimbrodt, G. Weiser, J. Koch, S. Nau, W. Stolz, R. Fehse, A. R. Adams, A. Ramakrishnan, G. Ebbinghaus
  physica status solidi (b) 235 (2) (2003), pp. 417 - 422
  
  Influence of Codoping on the Magnetoresistance of Paramagnetic (Ga,Mn)As
  S. Ye, P. J. Klar, T. Henning, M. Lampalzer, W. Stolz, W. Heimbrodt
  Journal of Superconductivity 16 (1) (2003), pp. 159 - 162
  
  Early manifestation of localization effects in diluted Ga(AsN)
  F. Masia, A. Polimeni, G. Baldassarri Höger von Högersthal, M. Bissiri, M. Capizzi, P. J. Klar, and W. Stolz
  Appl. Phys. Lett. 82 (25) (2003), pp. 4474 - 4476
  
  Correlation of the physical properties and the interface morphology of AlGaAs/GaAs heterostructures
  L. Gottwaldt, K. Pierz, F. J. Ahlers, E. O. Göbel, S. Nau, T. Torunski, and W. Stolz
  J. Appl. Phys. 94 (4) (2003), pp. 2464 - 2472
  
  Unusual properties of metastable (Ga,In)(N,As) containing semiconductor structures
  P. J. Klar, H. Grüning, L. Chen, T. Hartmann, D. Golde, M. Güngerich, W. Heimbrodt, J. Koch, K. Volz, B. Kunert, T. Torunski, W. Stolz, A. Polimeni, M. Capizzi, G. Dumitras, L. Geelhaar, H. Riechert
  IEE Proceedings - Optoelectronics 150 (1) (2003), pp. 28 - 35
  
  Global changes of the band structure and the crystal lattice of Ga(N,As) due to hydrogenation
  P. J. Klar, H. Grüning, M. Güngerich, W. Heimbrodt, J. Koch, T. Torunski, W. Stolz, A. Polimeni, and M. Capizzi
  Phys. Rev. B 67 (12) (2003), 121206 (R)
  
  Mesoscopic island structure at GaAs/(AlGa)As interfaces grown by MBE
  L. Gottwaldt, K. Pierz, F. J. Ahlers, E. O. Göbel, S. Nau, T. Torunski, W. Stolz
  Journal of Crystal Growth 251 (1 - 4) (2003), pp. 85 - 89
  
  The influence of the quantum lifetime on the width of the quantum Hall plateaus
  L. Gottwaldt, K. Pierz, F. J. Ahlers, L. Schweitzer, E. O. Göbel, W. Stolz
  Inst. Phys. Conf. Ser. 174 (2003), pp. 105 - 108
  
  Overgrowth experiments of ferromagnetic (MnGa)As-cluster layers by MOVPE
  M. Lampalzer, K. Volz, W. Treutmann, S. Nau, T. Torunski, K. Megges, J. Lorberth, W. Stolz
  Journal of Crystal Growth 248 (2003), pp. 474 - 478
  
  Nitrogen incorporation in (GaIn)(NAs) for 1.3 µm VCSEL grown with MOVPE
  A. Ramakrishnan, G. Steinle, D. Supper, W. Stolz, G. Ebbinghaus
  Journal of Crystal Growth 248 (2003), pp. 457 - 462
  
  Doping behaviour of Si, Te, Zn and Mg in lattice-matched (GaIn)(NAs)/GaAs bulk films
  K. Volz, J. Koch, B. Kunert and W. Stolz
  Journal of Crystal Growth 248 (2003), pp. 451 - 456
  
  Argon versus nitrogen ion beam assisted deposition of amorphous carbon and carbon-nitrogen films on aluminium for protection against aqueous corrosion
  W. Ensinger, O. Lensch, F. Sittner, J. Knecht, K. Volz, T. Matsutani and M. Kiuchi
  Nucl. Instr. Meth. Phys. Res. B 206 (2003), pp. 334 - 338
  
  The role of Sb in the MBE growth of (GaIn)(NAsSb)
  K. Volz, V. Gambin, W. Ha, M. A. Wistey, H. Yuen, S. Bank and J. S. Harris
  Journal of Crystal Growth 251 (1 - 4) (2003), pp. 360 - 366
  
  
  2002
  
  Coulomb Correlations and Biexciton Signatures in Coherent Excitation Spectroscopy of Semiconductor Quantum Wells
  E. Finger, S. Kraft, M. Hofmann, T. Meier, S. W. Koch, W. Stolz, W. W. Rühle, A. Wieck
  physica status solidi (b) 234 (1) (2002), pp. 424 - 434
  
  N-Composition and Pressure Dependence of the Inter Band Transitions of Ga(N,As)/GaAs Quantum Wells
  H. Grüning, P. J. Klar, W. Heimbrodt, J. Koch, W. Stolz, A. Lindsay, S. Tomić, E. P. O'Reilly
  High Pressure Research 22 (2) (2002), pp. 293 - 297
  
  Ferromagnetic resonance studies of (Ga,Mn)As with MnAs clusters
  Th. Hartmann, M. Lampalzer, P. J. Klar, W. Stolz, W. Heimbrodt, H.-A. Krug von Nidda, A. Loidl, L. Svistov
  Physica E 13 (2 - 4) (2002), pp. 572 - 576
  
  Interband transitions of quantum wells and device structures containing Ga(N,As) and (Ga,In)(N,As)
  P. J. Klar, H. Grüning, W. Heimbrodt, G. Weiser, J. Koch, K. Volz, W. Stolz, S. W. Koch, S. Tomić, S. A. Choulis, T. J. C. Hosea, E. P. O'Reilly, M. Hofmann, J. Hader and J. V. Moloney
  Semiconductor Science and Technology 17 (8) (2002), pp. 830 - 842
  
  Spin injection, spin transport and spin coherence
  M. Oestreich, M. Bender, J. Hübner, D. Hägele, W. W. Rühle, Th. Hartmann, P. J. Klar, W. Heimbrodt, M. Lampalzer, K. Volz and W. Stolz
  Semiconductor Science and Technology 17 (4) (2002), 285 - 297
  
  Emission dynamics and optical gain of 1.3-µm (GaIn)(NAs)/GaAs lasers
  M. R. Hofmann, N. Gerhardt, A. M. Wagner, C. Ellmers, F. Höhnsdorf, J. Koch, W. Stolz, S. W. Koch, W. W. Rühle, J. Hader, J. V. Moloney, E. P. O'Reilly, B. Borchert, A. Y. Egorov, H. Riechert, H. C. Schneider, W. W. Chow
  IEEE Journal of Quantum Electronics 38 (2) (2002), pp. 213 - 221
  
  MOVPE-growth and characterization of metastable (GaIn)(NAs)/GaAs heterostructures for 1.3 µm lasers
  A. Ramakrishnan, G. Ebbinghaus, W. Stolz
  Inst. Phys. Conf. Ser. 170 (2002), pp. 825 - 830
  
  MOVPE growth experiments and magnetic characterization of (GaMn)As layer structures
  M. Lampalzer, K. Volz, W. Treutmann, S. Nau, T. Torunski, K. Megges, J. Lorberth and W. Stolz
  Inst. Phys. Conf. Ser. 170 (2002), pp. 249 - 254
  
  Surface-emitting second-harmonic generation in AlGaAs/GaAs waveguides
  C. Degen, G. Jennemann, I. Fischer, W. Elsäßer, S. Leu, R. Rettig und W. Stolz
  Optical and Quantum Electronics 34 (7) (2002), pp. 707 - 716
  
  Semiconductor resonator solitons above bandgap
  V. B. Taranenko, C. O. Weiss, and W. Stolz
  J. Opt. Soc. Am. B 19 (4) (2002), pp. 684 - 688
  
  Pitting corrosion of aluminium coated by ion beam assisted deposition of carbon with argon ions at different ion-to-atom arrival ratios
  W. Ensinger, O. Lensch, J. Knecht, K. Volz, T. Matsutani and M. Kiuchi
  Surface and Coatings Technology 158 - 159 (2002), pp. 594 - 598
  
  Growth of the carbide, nitride and oxide of silicon by plasma immersion ion implantation
  K. Volz and W. Ensinger
  Surface and Coatings Technology 156 (1 - 3) (2002), p. 237 - 243
  
  The multi-aperture hollow target: a method for determining ion incidence angles in plasma immersion ion implantation
  W. Ensinger, K. Volz, M. Galonska, Ch. Gabor and H. Klein
  Surface and Coatings Technology 156 (1 - 3) (2002), p. 92 - 96
  
  
  2001
  
  Influence of varying N-environments on the properties of (GaIn)(NAs) vertical-cavity surface-emitting lasers
  S. A. Choulis, T. J. C. Hosea, P. J. Klar, M. Hofmann, and W. Stolz
  Appl. Phys. Lett. 79 (26) (2001), pp. 4277 - 4279
  
  Structure and composition of (GaMn)As formed by MOVPE
  K. Volz, M. Lampalzer, A. Schaper, J. Zweck, W. Stolz
  Inst. Phys. Conf. Ser. 169 (2001), pp. 211 - 214
  
  Spintronics: Spin Electronics and Optoelectronics in Semiconductors
  M. Oestreich, J. Hübner, D. Hägele, M. Bender, N. Gerhardt, M. Hofmann, W. W. Rühle, H. Kalt, Th. Hartmann, P. Klar, W. Heimbrodt, and W. Stolz
  Adv. in Solid State Physics 41 (2001), pp. 173 - 186
  
  Correlation of optical and transport properties of (AlGa)As/GaAs heterostructures
  L. Gottwaldt, F. J. Ahlers, E. O. Göbel, G. Hein, S. Nau, K. Pierz, and W. Stolz
  Proc. 25^th Int. Conf. "Physics of Semiconductors", Springer Proc. in Physics 87 (2001), pp. 751 - 752
  
  Novel investigation technique for interior III/V-semiconductor interfaces
  S. Nau, G. Bernatz, and W. Stolz
  Proc. 25^th Int. Conf. "Physics of Semiconductors", Springer Proc. in Physics 87 (2001), pp. 435 - 436
  
  Deviations from diffusive transport in 100 nm - 100 fs spatio-temporal pump-probe experiments on GaAs
  J. Hetzler, A. Brunner, M. Wegener, S. Leu, S. Nau, and W. Stolz
  Proc. 25^th Int. Conf. "Physics of Semiconductors", Springer Proc. in Physics 87 (2001), pp. 190 - 191
  
  (Ga,In)(N,As)-fine structure of the band gap due to nearest-neighbor configurations of the isovalent nitrogen
  P. J. Klar, H. Grüning, J. Koch, S. Schäfer, K. Volz, W. Stolz, W. Heimbrodt, A. M. Kamal Saadi, A. Lindsay, and E. P. O'Reilly
  Phys. Rev. B 64 (12) (2001), 121203 (R)
  
  Pressure and Temperature Dependent Studies of GaNxAs1-x/GaAs Quantum Well Structures
  P. J. Klar, H. Grüning, W. Heimbrodt, J. Koch, W. Stolz, P. M. A. Vicente, A. M. Kamal Saadi, A. Lindsay, E. P. O'Reilly
  physica status solidi (b) 223 (1) (2001), pp. 163 - 169
  
  Effects of Confinement on the Coupling between Nitrogen and Band States in InGaAs_1-xN_x/GaAs (x ≤ 0.025) Structures: Pressure and Temperature Studies
  S. A. Choulis, B. A. Weinstein, T. J. C. Hosea, M. Kamal-Saadi, E. P. O'Reilly, A. R. Adams, W. Stolz
  physica status solidi (b) 223 (1) (2001), pp. 151 - 156
  
  Monitoring the sign reversal of the valence band exchange integral in (Ga,Mn)As
  W. Heimbrodt, Th. Hartmann, P. J. Klar, M. Lampalzer, W. Stolz, K. Volz, A. Schaper, W. Treutmann, H.-A. Krug von Nidda, A. Loidl, T. Ruf, V. F. Sapega
  Physica E 10 (1 - 3) (2001), pp. 175 - 180
  
  Spatial solitons in a pumped semiconductor resonator
  V. B. Taranenko, C. O. Weiss, W. Stolz
  Optics Letters 26 (2) (2001), pp. 1574 - 1576
  
  Gain spectra of (GaIn)(NAs) laser diodes for the 1.3-µm-wavelength regime
  M. Hofmann, A. Wagner, C. Ellmers, C. Schlichenmeier, S. Schäfer, F. Höhnsdorf, J. Koch, W. Stolz, S. W. Koch, W. W. Rühle, J. Hader, J. V. Moloney, E. P. O'Reilly, B. Borchert, A. Yu. Egorov, and H. Riechert
  Appl. Phys. Lett. 78 (20) (2001), pp. 3009 - 3011
  
  High-efficiency (AlGa)As/GaAs solar cells grown by MOVPE using TBAs at low-temperatures and low V/III-ratios
  C. Agert, F. Dimroth, U. Schubert, A. W. Bett, S. Leu, W. Stolz
  Solar Energy Materials & Solar Cells 66 (1 - 4) (2001), pp. 637 - 644
  
  Determination of ion incidence angles in plasma immersion ion implantation by means of a hollow multi-aperture target
  M. Galonska, Ch. Gabor, R. W. Thomae, H. Klein, K. Volz and W. Ensinger
  Nucl. Instr. Meth. Phys. Res. B 175 - 177 (2001), pp. 658 - 662
  
  Pitting corrosion of aluminium coated with amorphous carbon films by aron ion beam assisted deposition at low process temperature
  O. Lensch, K. Volz, M. Kiuchi and W. Ensinger
  Nucl. Instr. Meth. Phys. Res. B 175 - 177 (2001), pp. 575 - 579
  
  Heteroepitaxial SiC films grown in Si by CH₄ plasma immersion ion implantation: Conditions and mechanism of their formation
  K. Volz, Ch. Klatt and W. Ensinger
  Nucl. Instr. Meth. Phys. Res. B 175 - 177 (2001), pp. 569 - 574
  
  Inner wall coating of cylinders by plasma immersion ion implantation for corrosion protection
  W. Ensinger, K. Volz and B. Enders
  Surface and Coatings Technology 136 (1 - 3) (2001), pp. 202 - 206
  
  Silicon carbide and amorphous carbon film formation by plasma immersion ion implantation: a comparison of methane and toluene as plasma forming gases
  K. Volz, K. Baba, R. Hatada and W. Ensinger
  Surface and Coatings Technology 136 (1 - 3) (2001), pp. 197 - 201
  
  Studies on treatment homogeneity of plasma immersion ion implantation by an optical method
  K. Volz, A. Hasse and W. Ensinger
  Surface and Coatings Technology 136 (1 - 3) (2001), pp. 80 - 84
  

• Inhalt ausklappen Inhalt einklappen bis 2000

  2000
  
  Structural properties of (GaIn)(NAs)/GaAs MQW structures grown by MOVPE
  F. Höhnsdorf, J. Koch, A. Hasse, K. Volz, A. Schaper, W. Stolz, C. Giannini, L. Tapfer
  Physica E 8 (3) (2000), pp. 205 - 209
  
  Structural Properties of (GaIn)(AsN)/GaAs MQW Structures Grown by MOVPE
  C. Giannini, E. Carlino, L. Tapfer, F. Höhnsdorf, J. Koch, and W. Stolz
  MRS Symp. "GaN and Related Alloys" Boston, USA, Proceedings Vol. 595 (1999), W3.54.1
  MRS Internet Journal of Nitride Semiconductor Research (5) 1 (2000), art. no.-W3.54
  
  Nitrogen-induced band formation in GaN_xAs_1-x studied by photoluminescence under hydrostatic pressure and photomodulated reflectance
  P. J. Klar, P. M. A. Vicente, H. Grüning, W. Heimbrodt, J. Koch, F. Höhnsdorf, W. Stolz & J. Camassel
  High Pressure Research 18 (1 - 6) (2000), pp. 29 - 34
  
  Growth of antimony-based materials in a multiwafer planetary MOVPE-reactor
  C. Agert, P. Lanyi, O. V. Sulima, W. Stolz, and A. W. Bett
  IEE Optoelectronics 147 (3) (2000), pp. 188 - 192
  
  Strain-induced modulation versus superlattice ordering in epitaxial (GaIn)P layers
  J. Jiang, A. K. Schaper, Z. Spika, and W. Stolz
  Phys. Rev. B 62 (23) (2000), pp. 15826 - 15833
  
  Disorder-induced dephasing in semiconductors
  S. Weiser, T. Meier, J. Möbius, A. Euteneuer, E. J. Mayer, W. Stolz, M. Hofmann, W. W. Rühle, P. Thomas, and S. W. Koch
  Phys. Rev. B 61 (19) (2000), pp. 13088 - 13089
  
  Morphological aspects of continuous and modulated epitaxial growth of (GaIn)P
  J. Jiang, A. K. Schaper, Z. Spika, and W. Stolz
  J. Appl. Phys. 88 (6) (2000), pp. 3341 - 3348
  
  Structural Investigations of (GaIn)(NAs)/GaAs Multi-Quantum-Wells by Transmission Electron Microscopy
  K. Volz, A. Hasse, A. K. Schaper, T. E. Weiric, F. Höhnsdorf, J. Koch and W. Stolz
  MRS Proceedings Vol. 618 (2000), p. 291 - 296
  
  From N isoelectronic impurities to N-induced bands in GaN_xAs_1-x alloy
  P. J. Klar, H. Grüning, W. Heimbrodt, J. Koch, F. Höhnsdorf, W. Stolz, P. M. A. Vicente, and J. Camassel
  Appl. Phys. Lett. 76 (23) (2000), pp. 3439 - 3441
  
  Observations of interaction-assisted hopping transport in GaAs/Ga_1-xAl_xAs quantum wells
  J. E. Golub, R. Eichmann, G. Strasser, G. Bernatz, S. Nau, W. Stolz, P. Thomas
  Journal of Luminescence 91 (1 - 2) (2000), pp. 7 - 12
  
  TEM Investigations of (GaIn)(NAs)/GaAs Multi-Quantum Wells grown by MOVPE
  A. Hasse, K. Volz, A. K. Schaper, J. Koch, F. Höhnsdorf, W. Stolz
  Crystal Research and Technology 35 (6 - 7) (2000), pp. 787 - 792
  
  Optical characterisation of MOVPE-grown Ga_1-xMn_xAs semimagnetic semiconductor layers
  Th. Hartmann, M. Lampalzer, W. Stolz, K. Megges, J. Lorberth, P. J. Klar, W. Heimbrodt
  Thin Solid Films 364 (1 - 2) (2000), pp. 209 - 212
  
  Investigation of Disordered Semiconductor Quantum Wells by Coherent Excitation Spectroscopy
  A. Euteneuer, E. Finger, W. Stolz, T. Meier, P. Thomas, S. W. Koch, M. Hofmann, W. W. Rühle, R. Hey, K. H. Ploog
  physica status solidi (a) 178 (1) (2000), pp. 183 - 188
  
  Normal-Mode Linewidths in a Semiconductor Microcavity with Various Cavity Qualities
  M. Hofmann, D. Karaiskaj, C. Ellmers, T. Maxisch, F. Jahnke, H.-J. Kolbe, G. Weiser, R. Rettig, S. Leu, W. Stolz, S. W. Koch, W. W. Rühle
  physica status solidi (a) 178 (1) (2000), pp. 179 - 181
  
  (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser with ultrabroad temperature operation range
  A. Wagner, C. Ellmers, F. Höhnsdorf, J. Koch, C. Agert, S. Leu, M. Hofmann, W. Stolz, and W. W. Rühle
  Appl. Phys. Lett. 76 (3) (2000), pp. 271 - 272
  
  LP-MOVPE growth of carbon doped (InGa)P/GaAs HBT using an all-liquid source configuration
  P. Velling, M. Agethen, E. Herenda, W. Prost, W. Stolz, F. J. Tegude
  Proc. 26^th Int. Symp. "Compound Semiconductors", Berlin (1999),
  Inst. Phys. Conf. Ser. 166 (2000), p. 71
  
  Quantitative topographic assessment of Cu incorporation in GaAs
  M. Bäumler, R. Stibal, W. Stolz, Th. Steinegger, M. Jurisch, M. Maier, W. Jantz
  Journal of Crystal Growth 210 (1 - 3) (2000), pp. 207 - 211
  
  Alternative N-, P-, As-precursors for III/V-epitaxy
  W. Stolz
  Journal of Crystal Growth 209 (2 - 3) (2000), pp. 272 - 278
  
  Strain-driven transition from stepped interfaces to regularly spaced macrosteps in (GaIn)As/Ga(PAs) symmetrically strained superlattices
  C. Giannini, T. Baumbach, D. Lübbert, R. Felici, L. Tapfer, T. Marschner, W. Stolz, N. Y. Jin-Phillipp and F. Phillipp
  Phys. Rev. B 61 (3) (2000), pp. 2173 - 2179
  
  Coherence in real space: the transition range from bulk to confined states studied by the Franz-Keldysh effect
  H. J. Kolbe, C. Agert, W. Stolz, G. Weiser
  Physica E 6 (1 - 4) (2000), pp. 173 - 176
  
  Optical characterization of (GaIn)(NAs)/GaAs MQW structures
  J. Koch, F. Höhnsdorf und W. Stolz
  Journal of Electronic Materials 29 (1) (2000), pp. 165 - 168
  
  Effect of MOVPE growth interruptions on the gallium arsenide interior interface morphology
  G. Bernatz, S. Nau, R. Rettig und W. Stolz
  Journal of Electronic Materials 29 (1) (2000), pp. 129 - 133
  
  Emission Dynamics and Gain of (GaIn)(NAs)/GaAs Lasers
  A. Wagner, C. Ellmers, F. Hohnsdorf, J. Koch, S. Leu, W. Stolz, M. Hofmann, W. W. Rühle,
  physica status solidi (b) 221 (1) (2000), pp. 567 - 569
  
  100 fs Carrier Dynamics in GaAs under 100 nm Diameter Apertures
  J. Hetzler, A. Brunner, M. Wegener, S. Leu, S. Nau, W. Stolz
  physica status solidi (b) 221 (1) (2000), pp. 425 - 428
  
  Coherent excitation spectroscopy of disordered quantum-well structures
  E. Finger, S. Kraft, A. Euteneuer, M. Hofmann, W. Stolz, W. W. Rühle
  physica status solidi (b) 221 (1) (2000), pp. 373 - 378
  
  Composition and structure of SiC_x:H films formed by plasma immersion ion implantation from a methane plasma
  K. Volz, Ch. Klatt, W. Ensinger
  Mat. Res. Soc. Symp. Proc. 609 (2000), p. 271
  
  Heteroepitaxial growth of 3C-SiC on (100) silicon by C₆₀ and Si molecular beam epitaxy
  K. Volz, S. Schreiber, J. W. Gerlach, W. Reiber, B. Rauschenbach, B. Stritzker, W. Assmann and W. Ensinger
  Materials Science and Engineering A 289 (1 - 2) (2000), pp. 255 - 264
  
  Nitrogen plasma immersion ion implantation and silicon sputter deposition combined with methane implantation as an in-line process for improving corrosion and wear performance of stainless steels
  K. Volz, B. Enders and W. Ensinger
  Surface and Coatings Technology 128 - 129 (2000), pp. 479 - 483
  
  Tantalum nitride films formed by ion beam assisted deposition: analysis of the structure in dependence on the ion irradiation intensity
  K. Volz, M. Kiuchi and W. Ensinger
  Surface and Coatings Technology 128 - 129 (2000), pp. 298 - 302
  
  C-SiC-Si gradient films formed on silicon by ion beam assisted deposition at room temperature
  K. Volz, M. Kiuchi, M. Okumura and W. Ensinger
  Surface and Coatings Technology 128 - 129 (2000), pp. 274 - 279
  
  Ion-beam assisted deposition of tube inner walls by plasma immersion ion implantation
  W. Ensinger and K. Volz
  Surface and Coatings Technology 128 - 129 (2000), pp. 270 - 273
  
  Plasma immersion ion implantation of complex-shaped objects: an experimental study on the treatment homogeneity
  W. Ensinger, K. Volz and T. Höchbauer
  Surface and Coatings Technology 128 - 129 (2000), pp. 265 - 269
  
  Ion beam-assisted deposition of nitrides of the 4th group of transition metals
  W. Ensinger, K. Volz and M. Kiuchi
  Surface and Coatings Technology 128 - 129 (2000), pp. 81 - 84
  
  Thin film oxides as probe for homogeneity measurements of 3-dimensional objects treated by plasma immersion ion implantation
  W. Ensinger and K. Volz
  Nucl. Instr. Meth. Phys. Res. B 166 - 167 (2000), pp. 154 - 158
  
  Ammonia plasma immersion ion implantation into silicon: Composition and structure of the resulting silicon-nitrogen-hydrogen system
  K. Volz, B. Rauschenbach, C. Klatt and W. Ensinger
  Nucl. Instr. Meth. Phys. Res. B 166 - 167 (2000), pp. 75 - 81
  
  
  1999
  
  Confinement effects in bulk samples derived from the Franz-Keldysh effect
  H. J. Kolbe, C. Agert, W. Stolz, and G. Weiser
  Phys. Rev. B 59 (23) (1999), pp. 14896 - 14898
  
  Investigation of strain induced patterning in superlattices by grazing incidence diffraction - comparison of morphological and strain ordering
  G. T. Baumbach, C. Giannini, D. Lübbert, R. Felici, L. Tapfer, T. Marschner and W. Stolz
  Journal of Physics D: Appl. Phys. 32 (10A) (1999), A212 - A215
  
  Optical Spectroscopic Studies of N-Related Bands in Ga(N,As)
  H. Grüning, L. Chen, Th. Hartmann, P. J. Klar, W. Heimbrodt, F. Höhnsdorf, J. Koch and W. Stolz
  physica status solidi (b) 215 (1) (1999), pp. 39 - 45
  
  Experimental investigation of structures of interior interfaces in GaAs
  G. Bernatz, S. Nau, R. Rettig, H. Jänsch, and W. Stolz
  J. Appl. Phys. 86 (12) (1999), pp. 6752 - 6757
  
  TBAs and TBP - improved group V sources for MOVPE
  W. Stolz and T. Whittaker
  Compound Semiconductor 5 (1999), p. 29
  
  Patterned growth of (AlGa)As using metalorganic vapor-phase epitaxy
  L. Hofmann, A. Knauer, I. Rechenberg, M. Weyers, W. Stolz
  Journal of Crystal Growth 206 (4) (1999), pp. 255 - 262
  
  DBR lasers emitting at 1060 nm with first-order grating in InGaP waveguide layer
  L. Hofmann, A. Klehr, A. Knauer, V. B. Smirnitski, W. Stolz
  Electronics Letters 35 (11) (1999), pp. 902 - 903
  
  Coherent Excitation Spectroscopy on Inhomogeneous Exciton Ensembles
  A. Euteneuer, E. Finger, M. Hofmann, W. Stolz, T. Meier, P. Thomas, S. W. Koch, W. W. Rühle, R. Hey and K. Ploog
  Phys. Rev. Lett. 83 (10) (1999), pp. 2073 - 2076
  
  Linewidths in a semiconductor microcavity with variable strength of normal-mode coupling
  D. Karaiskaj, T. Maxisch, C. Ellmers, H.-J.Kolbe, G. Weiser, R. Rettig, S. Leu, W. Stolz, M. Hofmann, F. Jahnke, S. W. Koch, and W. W. Rühle
  Phys. Rev. B 59 (21) (1999), pp. 13525 - 13527
  
  Magnetoexciton quantum beats: influence of Coulomb correlations
  M. Koch, S. T. Cundiff, W. H. Knox, J. Shah, W. Stolz
  Solid State Communications 111 (10) (1999), pp. 553 -558
  
  Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelenghts in the range 1.28 - 1.38 µm
  F. Höhnsdorf, J. Koch, S. Leu, W. Stolz, B. Borchert, M. Druminski
  Electronics Letters 35 (7) (1999), pp. 571 - 572
  
  Ultrafast (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser for the 1.3 µm wavelength regime
  C. Ellmers, F. Höhnsdorf, J. Koch, C. Agert, S. Leu, D. Karaiskaj, M. Hofmann, W. Stolz, and W. W. Rühle
  Appl. Phys. Lett. 74 (16) (1999), pp. 2271 - 2273
  
  Excitonic wave packets observed in space- and time-resolved pump and probe experiments
  R. Otremba, S. Grosse, M. Koch, J. Feldmann, V. M. Axt, T. Kuhn, W. Stolz
  Solid State Communications 109 (5) (1999), pp. 317 - 322
  
  Ultrafast nonlinear subwavelength solid immersion spectroscopy at T = 8K
  M. Vollmer, H. Giessen, W. Stolz, W. W. Rühle, L. Ghislain, and V. Elings
  Appl. Phys. Lett. 74 (13) (1999), pp. 1791 - 1793
  
  Optically pumped (GaIn)As/Ga(PAs) vertical-cavity surface-emitting lasers with optimized dynamics
  C. Ellmers, M. R. Hofmann, D. Karaiskaj, S. Leu, W. Stolz, W. W. Rühle, and M. Hilpert
  Appl. Phys. Lett. 74 (10) (1999), pp. 1367 - 1369
  
  Ultrafast nonlinear subwavelength solid immersion spectroscopy at T = 8K: an alternative to nonlinear scanning near-field optical microscopy
  M. Vollmer, H. Giessen, W. Stolz, W. W. Rühle, A. Knorr, S. W. Koch, L. Ghislain, V. Elings
  Journal of Microscopy 194 (2 - 3) (1999), pp. 523 - 527
  
  LP-MOVPE grown GaAs- and InP-based HBTs using all-liquid alternative sources
  P. Veiling, M. Agethen, E. Herenda, W. Prost, W. Stolz, F.-J. Tegude
  11^th Int. Conf. "Indium Phosphide and Related Materials" (1999), pp. 467 - 470
  
  Structural investigations of silicon carbide films formed by fullerene carbonization of silicon
  K. Volz, S. Schreiber, M. Zeitler, B. Rauschenbach, B. Stritzker and W. Ensinger
  Surface and Coatings Technology 122 (2 - 3) (1999), pp. 101 - 107
  
  Formation of hafnium nitride films by medium-energy ion-beam-assisted deposition
  K. Volz, M. Kiuchi and W. Ensinger
  Surface and Coatings Technology 120 - 121 (1999), pp. 353 - 357
  
  Three-dimensional dose uniformity of plasma immersion ion implantation shown with the example of macro-trenches
  W. Ensinger, K. Volz and T. Höchbauer
  Surface and Coatings Technology 120 - 121 (1999), pp. 347 - 352
  
  An apparatus for in-situ or sequential plasma immersion ion beam treatment in combination with r. f. sputter deposition or triode d. c. sputter deposition
  W. Ensinger, K. Volz and B. Enders
  Surface and Coatings Technology 120 - 121 (1999), pp. 343 - 346
  
  Synthesis of buried silicon oxide layers by water plasma immersion ion implantation
  I. Großhans, K. Volz, W. Ensinger and B. Rauschenbach
  Nucl. Instr. Meth. Phys. Res. B 155 (1 - 2) (1999), pp. 67 - 74
  
  Low-energy ion assisted deposition of epitaxial gallium nitride films
  J. W. Gerlach, D. Schrupp, K. Volz, M. Zeitler, B. Rauschenbach and A. Anders
  Nucl. Instr. Meth. Phys. Res. B 148 (1 - 4) (1999), p. 406 - 410
  
  Influence of substrate temperature on damage buildup and removal of ion implanted gallium nitride
  C. Liu, A. Wenzel, K. Volz and B. Rauschenbach
  Nucl. Instr. Meth. Phys. Res. B 148 (1 - 4) (1999), pp. 396 - 400
  
  Formation of crystalline SiC films by CH₄ plasma immersion ion implantation into Si
  K. Volz, B. Rauschenbach, B. Stritzker and W. Ensinger
  Nucl. Instr. Meth. Phys. Res. B 148 (1 - 4) (1999), pp. 540 - 544
  
  
  1998
  
  GaAs-based VCSEL-structures with strain-compensated (GaIn)As/Ga(PAs)-MQWH active regions grown by using TBAs and TBP
  C. Ellmers, S. Leu, R. Rettig, M. Hofmann, W. W. Rühle, W. Stolz
  Journal of Crystal Growth 195 (1 - 4) (1998), pp. 630 - 636
  
  Investigations of (GaIn)(NAs) bulk layers and (GaIn)(NAs)/GaAs multiple quantum well structures grown using tertiarybutylarsine (TBAs) and 1,1-dimethylhydrazine (UDMHy)
  F. Höhnsdorf, J. Koch, C. Agert, W. Stolz
  Journal of Crystal Growth 195 (1 - 4) (1998), pp. 391 - 396
  
  C- and O-incorporation in (AlGa)As epitaxial layers grown by MOVPE using TBAs
  S. Leu, F. Höhnsdorf, W. Stolz, R. Becker, A. Salzmann, A. Greiling
  Journal of Crystal Growth 195 (1 - 4) (1998), pp. 98 - 104
  
  Si-doping of MOVPE grown InP and GaAs by using the liquid Si source ditertiarybutyl silane
  S. Leu, H. Protzmann, F. Höhnsdorf, W. Stolz, F. Steinkirchner, E. Hufgard
  Journal of Crystal Growth 195 (1 - 4) (1998), pp. 91 - 97
  
  Growth of Ru doped semi-insulating InP by low pressure metalorganic chemical vapor deposition
  A. Dadgar, O. Stenzel, L. Köhne, A. Näser, M. Straßburg, W. Stolz, D. Bimberg, H. Schumann
  Journal of Crystal Growth 195 (1 - 4) (1998), pp. 69 - 73
  
  X-ray diffraction study of intentionally disordered (GaIn)As/Ga(PAs) heterostructures
  R. Rettig, T. Marschner, W. Stolz, and L. Tapfer
  J. Appl. Phys. 84 (1) (1998), pp. 237 - 247
  
  Atomic scale properties of interior interfaces of semiconductor heterostructures as detemined by quasi-digital highly selective etching and atomic force microscopy
  R. Rettig, W. Stolz
  Physica E 2 (1- 4) (1998), pp. 277 - 281
  
  Coherent Excitation of Magnetoexciton Wavepackets
  S. T. Cundiff, M. Koch, J. Shah, W. H. Knox, W. Stolz
  physica status solidi (b) 206 (1) (1998), pp. 77 - 85
  
  Structural investigations of chromium nitride films formed by ion beam-assisted deposition
  K. Volz, M. Kiuchi and W. Ensinger
  Surface and Coatings Technology 108 - 109 (1998), pp. 303 - 307
  
  Microscopy of SiC Layers Grown by C₆₀ Deposition on Si (100)
  R. Scholz, U. Gösele, K. Volz and B. Rauschenbach
  Jpn. J. Appl. Phys. 37 (11) (1998), pp. 6090 - 6093
  
  Microstructure and composition of titanium nitride formed by ion beam enhanced nitrogen sorption of evaporated titanium under argon ion irradiation
  W. Ensinger and K. Volz
  Materials Science and Engineering A 253 (1 - 2) (1998), pp. 234 - 239
  
  Ion implantation in GaN at liquid-nitrogen temperature: Structural characteristics and amorphization
  C. Liu, B. Mensching, M. Zeitler, K. Volz, and B. Rauschenbach
  Phys. Rev. B 57 (4) (1998), pp. 2530 - 2535
  
  Structural investigations of titanium nitride films formed by plasma immersion ion implantation
  K. Volz, W. Ensinger, B. Stritzker and B. Rauschenbach
  Surface and Coatings Technology 103 - 104 (1998), pp. 257 - 261
  
  Formation of silicon carbide and amorphous carbon films by pulse biasing silicon to a high voltage in a methane electron cyclotron resonance microwave plasma
  K. Volz, W. Ensinger, W. Reiber, B. Rauschenbach and B. Stritzker
  Journal of Materials Research 13 (7) (1998), p. 1765 - 1768
  
  Formation of silicon carbide and nitride by ECR microwave plasma immersion ion implantation
  K. Volz, W. Ensinger, B. Rauschenbach and B. Stritzker
  Nucl. Instr. Meth. Phys. Res. B 141 (1 - 4) (1998), pp. 663 - 669
  
  Formation of silicon nitride layers by nitrogen ion irradiation of silicon biased to a high voltage in an electron cyclotron resonance microwave plasma
  W. Ensinger, K. Volz, G. Schrag, B. Stritzker, and B. Rauschenbach
  Appl. Phys. Lett. 72 (10) (1998), 1164
  
  Synthesis of epitaxial 3C-SiC by C₆₀ carbonization of silicon on sapphire
  K. Volz, J. Müller, W. Reiber, B. Rauschenbach and B. Stritzker
  Carbon 36 (5 - 6) (1998), pp. 817 - 820
  
  Composition and microstructure of titanium nitride formed on Ti6Al4V by nitrogen plasma immersion ion implantation
  M. Rinner, K. Volz, W. Ensinger, W. Assmann and B. Rauschenbach
  Surface and Coatings Technology 100 - 101 (1998), pp. 366 - 371
  
  
  1997
  
  Relaxation Dynamics of Electron-Hole Pairs Studied by Spatiotemporal Pump and Probe Experiments
  S. Grosse, R. Arnold, G. von Plessen, M. Koch, J. Feldmann, V. M. Axt, T. Kuhn, R. Rettig, W. Stolz
  physica status solidi (b) 204 (1) (1997), pp. 147 - 150
  
  Biexcitonic binding energies in the transition regime from three- to two-dimensional semiconductors
  A. Euteneuer, J. Möbius, R. Rettig, E. J. Mayer, M. Hofmann, W. Stolz, E. O. Göbel, and W. W. Rühle
  Phys. Rev. B 56 (16) (1997), R10028 - R10031
  
  Diffuse X-ray reflection from multilayers with stepped interfaces
  V. Holý, C. Giannini, L. Tapfer, T. Marschner, W. Stolz
  Phys. Rev. B 55 (15) (1997), pp. 9960 - 9968
  Erratum: Phys. Rev. B 56 (15) (1997), p. 9975
  
  Thickness modulation in symmetrically strained III-V semiconductor superlattices grown by MOVPE
  N. Y. Jin-Phillipp, F. Phillipp, T. Marschner, W. Stolz
  Journal of Materials Science: Materials in Electronics 8 (5) (1997), pp. 289 - 299
  
  Confinement Dependence of Biexcitonic Binding Energies in Semiconductor Quantum Wells
  A. Euteneuer, J. Möbius, R. Rettig, M. Hofmann, E. J. Mayer, W. Stolz, E. O. Göbel, W. W. Rühle
  physica status solidi (a) 164 (1) (1997), pp. 253 - 258
  
  Structural characteristics of highly ordered (GaIn)P
  J. Jiang, A. K. Schaper, Z. Spika, W. Stolz, P. Werner, and L. Tóth
  Conference "Microscopy of Semiconducting Materials", Oxford (1997),
  Inst. Phys. Conf. Ser. 157 (1997), pp. 261 - 264
  
  Effects of Coulomb interaction in intentionally disordered semiconductor superlattices
  G. Richter, W. Stolz, P. Thomas, S. W. Koch, K. Maschke, I. P. Zvyagin
  Superlattices and Microstructures 22 (4) (1997), pp. 475 - 480
  
  Structural ordering and interface morphology in symmetrically strained (GaIn)As/Ga(PAs) superlattices grown on off-oriented GaAs(100)
  C. Giannini, L. Tapfer, Y. Zhuang, L. DeCaro, T. Marschner and W. Stolz
  Phys. Rev. B 55 (8) (1997), pp. 5276 - 5283
  
  Growth and structural properties of ^(GaIn)As/_Ga(PAs) intentionally disordered superlattice structures grown by metalorganic vapor phase epitaxy
  R. Rettig, T. Marschner, L. Tapfer, W. Stolz, E. O. Göbel
  Journal of Crystal Growth 170 (1 - 4) (1997), pp. 748 - 751
  
  Correlation of ordering formation and surface structure in (GaIn)P using modulated MOVPE
  Z. Spika, C. Zimprich, W. Stolz, E. O. Göbel, J. Jiang, A. Schaper, P. Werner
  Journal of Crystal Growth 170 (1 - 4) (1997), pp. 257 - 262
  
  Properties of (Ga_0.47In_0.53)As epitaxial layers grown by metalorganic vapor phase epitaxy (MOVPE) using alternative arsenic precursors
  H. Protzmann, F. Höhnsdorf, Z. Spika, W. Stolz, E. O. Göbel, M. Müller, J. Lorberth
  Journal of Crystal Growth 170 (1 - 4) (1997), pp. 155 - 160
  
  Lateral periodicity in highly-strained (GaIn)As/Ga(PAs) superlattices investigated by X-ray scattering techniques
  Y. Zhuang, C. Giannini, L. Tapfer, T. Marschner, W. Stolz,
  Nuovo Cimento della Societa Italiana di Fisica D 19 (2 - 4) (1997), pp. 377 - 383
  
  Lattice expansion of Ca and Ar ion implanted GaN
  C. Liu, B. Mensching, K. Volz, and B. Rauschenbach
  Appl. Phys. Lett. 71 (16) (1997), 2313
  
  Electron microscopy of SiC layers produced by fullerene carbonization of silicon
  J. Müller, K. Volz, R. Scholz, B. Stritzker, B. Rauschenbach
  European Journal of Cell Biology 74: 126-126 Suppl. 45 (1997)
  
  Formation of Buried SiC Layers in Silicon by Ion Beam Synthesis
  K. Volz, J. K. N. Lindner and B. Stritzker
  Materials Science Forum 248 - 249 (1997), pp. 237 - 240
  
  Ion Beam Induced Epitaxial Crystallization of Buried SiC Layers in Silicon
  J. K. N. Lindner, K. Volz and B. Stritzker
  Materials Science Forum 248 - 249 (1997), pp. 73 - 78
  
  Ion beam modification of Si/SiC/Si layer systems
  K. Volz, J. K. N. Lindner and B. Stritzker
  Nucl. Instr. Meth. Phys. Res. B 127 - 128 (1997), pp. 355 - 359
  
  
  1996
  
  Spectrally resolved four-wave mixing experiments on bulk GaAs with 14-fs pulses
  M. U. Wehner, D. Steinbach, M. Wegener, T. Marschner, and W. Stolz
  J. Opt. Soc. Am. B 13 (5) (1996), pp. 977 - 980
  
  Non-Markovian Relaxation in GaAs: Four-Wave Mixing Experiments Using 15 fs Pulses
  M. Wegener, M. U. Wehner, D. Steinbach, L. Bányai, D. B. Tran-Thoai, E. Reitsamer, H. Haug & W. Stolz
  Proc. 23^rd Int. Conf. "Physics of Semiconductors", Berlin (1996)
  Eds. M. Scheffler and R. Zimmermann, World Scientific (Singapore 1996), pp. 633 - 640
  
  Structural and Electronic Properties of Ordered (GaIn)P
  Z. Spika, J. Jiang, C. Zimprich, P. Großmann, A. Schaper, W. Stolz, E. O. Göbel, P. Werner & J. Feldmann
  Proc. 23^rd Int. Conf. "Physics of Semiconductors", Berlin (1996)
  Eds. M. Scheffler and R. Zimmermann, World Scientific (Singapore 1996), pp. 465 - 468
  
  Optical Coherence in Semiconductors: Strong Emission Mediated by Nondegenerate Interactions
  S. T. Cundiff, M. Koch, W. H. Knox, J. Shah, and W. Stolz
  Phys. Rev. Lett. 77 (6) (1996), pp. 1107 - 1110
  
  Disorder mediated biexcitonic beats in semiconductor quantum wells
  T. F. Albrecht, K. Bott, T. Meier, A. Schulze, M. Koch, S. T. Cundiff, J. Feldmann, W. Stolz, P. Thomas, S. W. Koch, and E. O. Göbel
  Phys. Rev. B 54 (7) (1996), pp. 4436 - 4439
  
  Investigations of the strutural stability of highly strained [(Al)GaIn]As/Ga(PAs) multiple quantum wells
  T. Marschner, S. Lutgen, M. Volk, W. Stolz, and E. O. Göbel
  Appl. Phys. Lett. 69 (15) (1996), pp. 2249 - 2251
  
  Optical bistability in symmetrically strained (GaIn)As/Ga(PAs) superlattices
  G. Bastian, G. von Plessen, J. Feldmann, J. Hader, T. Marschner, W. Stolz, and E. O. Göbel
  Appl. Phys. Lett. 69 (3) (1996), pp. 308 - 310
  
  Metalorganic vapor phase epitaxy of InP using the novel P-source ditertiarybutyl phosphine (DitBuPH)
  H. Protzmann, Z. Spika, B. Spill, G. Zimmermann, W. Stolz, E. O. Göbel, P. Gimmnich und J. Lorberth
  Journal of Electronic Materials 25 (3) (1996), pp. 443 - 448
  
  New Developments of Less Toxic Group-V Precursors for the Metalorganic Vapour Phase Epitaxy of III-V-Semiconductors: In-Situ-Formation of As-H Functions by Thermal ß-Elimination of Specific As-Trialkyl Compounds
  G. Zimmermann, Z. Spika, T. Marschner, W. Stolz, E. O. Göbel, P. Gimmnich, R. Becker, J. Lorberth, A. Greiling and A. Salzmann
  Jpn. J. Appl. Phys. 35 (4A) (1996), pp. 2035 - 2042
  
  Transmission electron microscopy study on defect reduction in GaAs on Si heteroepitaxial layers grown by metalorganic vapor phase epitaxy
  N. Y. Jin-Phillipp, F. Phillipp, T. Marschner, W. Stolz, E. O. Göbel
  Journal of Crystal Growth 158 (1 - 2) (1996), pp. 28 - 36
  
  Strain induced self organized growth of lateral periodic strained layer superlattices on off-oriented substrates by metalorganic vapour phase epitaxy
  T. Marschner, L. Tapfer, N. Y. Jin-Phillipp, F. Phillipp, S. Lutgen, M. Volk, W. Stolz, E. O. Göbel
  Solid-State Electronics 40 (1 - 8) (1996), pp. 819 - 823
  
  Magnetooptical investigations of symmetrically strained (GaIn)As/Ga(PAs) multiple quantum well structures
  M. Volk, S. Lutgen, T. Marschner, W. Stolz, E. O. Göbel, P. C. M. Christiansen, J. C. Maan
  Solid-State Electronics 40 (1 - 8) (1996), pp. 585 - 589
  
  Ion beam induced amorphization and recrystallization of Si/SiC/Si layer systems
  K. Volz, J. K. N. Lindner and B. Stritzker
  Nucl. Instr. Meth. Phys. Res. B 120 (1 - 4) (1996), pp. 133 - 138
  
  Formation of buried epitaxial silicon carbide layers in silicon by ion beam synthesis
  J. K. N. Lindner, K. Volz, U. Preckwinkel, B. Götz, A. Frohnwieser, B. Rauschenbach and B. Stritzker
  Materials Chemistry and Physics 46 (2 - 3) (1996), pp. 147 - 155
  
  Buried epitaxial layers of 3C-SiC in Si (100) and Si (111) by ion beam synthesis: A structural characterization
  J. K. N. Lindner, K. Volz, and B. Stritzker
  Inst. Phys. Conf. Ser. 142 Chapter 1 (1996), pp. 145 - 148
  
  SiC Precipitate Formation during high Dose Carbon Implantation into Silicon
  J. K. N. Lindner, K. Volz, and B. Stritzker
  Mat. Res. Soc. Symp. Proc. 438 (1996), pp. 289 - 294
  
  
  1995
  
  Near-field optical characterization of the photoluminescence from partially ordered (GaIn)P
  M. J. Gregor, P. G. Blome, R. G. Ulbrich, P. Grossmann, S. Grosse, J. Feldmann, W. Stolz, E. O. Göbel, D. J. Arent, M. Bode, K. A. Bertness, and J. M. Olson
  Appl. Phys. Lett. 67 (24) (1995), pp. 3572 - 3574
  
  Exciton-LO-Phonon Quantum Kinetics: Evidence of Memory Effects in Bulk GaAs
  L. Banyai, D. B. Tran Thoai, E. Reitsamer, H. Haug, D. Steinbach, M. U. Wehner, M. Wegener, T. Marschner and W. Stolz
  Phys. Rev. Lett. 75 (11) (1995), pp. 2188 - 2191
  
  Carrier effective masses in symmetrically strained (GaIn)As/Ga(PAs) multiple-quantum-well structures
  M. Volk, S. Lutgen, T. Marschner, W. Stolz, E. O. Göbel, P. C. M. Christiansen and J. C. Maan
  Phys. Rev. B 52 (15) (1995), pp. 11096 - 11104
  
  Structural investigations of the direct growth of AlGaAs/GaAs quantum wire structures by MOVPE
  W. Stolz
  Proc. of the NATO Adv. Res. Workshop "Low Dimensional Structures Prepared by Growth or Regrowth on Patterned Substrates",
  Eds. K. Eberl, P. M. Petroff and P. Demeester, Ringberg in Rottach-Egern (1995), Kluwer Academic Publishers, Dordrecht (1995), ISBN 0-7923-3679-8
  NATO ASI Series E 298 (1995), pp. 301 - 312
  
  Design and application of a femtosecond optical parametric oscillator for time-resolved spectroscopy of semiconductor heterostructures
  T. F. Albrecht, J. H. H. Sandmann, J. Feldmann, W. Stolz, E. O. Göbel, H. Hillmer, R. Lösch und W. Schlapp
  Appl. Phys. B 60 (5) (1995), pp. 459 - 467
  
  Atomic incorporation efficiencies for strained ^(GaIn)As/_Ga(PAs) superlattice structures grown by metalorganic vapour phase epitaxy
  S. Lutgen, T. Marschner, W. Stolz, E. O. Göbel, L. Tapfer
  Journal of Crystal Growth 152 (1 - 2) (1995), pp. 1 - 13
  
  Investigations on deep traps in GaAs and (Al_xGa_1-x)As bulk layers grown by metalorganic vapour-phase epitaxy using the new alternative arsenic precursor diethyl-tert-butylarsin
  Z. Spika, G. Zimmermann, W. Stolz, E. O. Göbel, P. Gimmnich, J. Lorberth, A. Greiling, A. Salzmann, S. Weiß, U. Sudjadi, A. Bock, R. Kassing
  Journal of Crystal Growth 146 (1 - 4) (1995), pp. 521 - 526
  
  
  1994
  
  Determination of excitonic binding energies in symmetrically strained (GaIn)As/Ga(AsP) multiple quantum wells using quantum beat spectroscopy
  M. Koch, M. Volk, T. Meier, J. Feldmann, W. Stolz, P. Thomas, E. O. Göbel
  Superlattices and Microstructures 15 (3) (1994), pp. 329 - 332
  
  Strain-induced changes in epitaxial layer morphology of highly-strained III/V-semiconductor heterostructures
  T. Marschner, S. Lutgen, M. Volk, W. Stolz, E. O. Göbel, N. Y. Jin-Phillipp, F. Phillipp
  Superlattices and Microstructures 15 (2) (1994), pp. 183 - 186
  
  Coherent dynamics of exciton wavepackets in semiconductor and heterostructures
  J. Feldmann, M. Koch, E. O. Göbel, F. Jahnke, T. Meier, W. Schäfer, P. Thomas, S. W. Koch, H. Nickel, S. Luttgen and W. Stolz
  Semiconductor Science and Technology 9 (1994), pp. 1965 - 1971
  
  Rabi Flopping in Semiconductors
  S. T. Cundiff, A. Knorr, B. Spill, J. Feldmann, W. Stolz, S. W. Koch, E. O. Göbel, H. Nickel
  Proc. 9^th Int. Conf. "Ultrafast Phenomena", Dana Point (1994),
  Ed. P. F. Barbara, Springer (1994), ISBN 3540584552
  
  GaAs substrate pretreatment and metalorganic vapour phase epitaxy of GaAs, AlAs and (AlGa)As using ß-eliminating trialkyl-As precursors
  G. Zimmermann, Z. Spika, T. Marschner, B. Spill, W. Stolz, E. O. Göbel, P. Gimmnich, J. Lorberth, A. Greiling, A. Salzmann
  Journal of Crystal Growth 145 (1 - 4) (1994), pp. 512 - 519
  
  Excitonic and free-carrier polarizations of bulk GaAs studied by femtosecond coherent spectroscopy
  A. Leitenstorfer, A. Lohner, K. Rick, P. Leisching, T. Elsaesser, T. Kuhn, F. Rossi, W. Stolz and K. Ploog
  Phys. Rev. B 49 (23) (1994), pp. 16372 - 16380
  
  Metalorganic vapor-phase epitaxy of III/V-semiconductors using alternative metalorganic-group-V-compounds decomposing under in-situ formation of group-V-H-functions
  G. Zimmermann, Z. Spika, W. Stolz, E. O. Göbel, P. Gimmnich, J. Lorberth, A. Greiling, A. Salzmann
  Proc. 20^th Int. Symp. "GaAs and Related Compounds", Freiburg (1993),
  Inst. Phys. Conf. Ser. 136 (1994), pp. 613 - 618
  
  Femtosecond degenerate four-wave-mixing on unstrained (InGa)As/InP multiple-quantum-wells using an optical parametric oscillator
  T. F. Albrecht, J. H. H. Sandmann, S. T. Cundiff, J. Feldmann, W. Stolz, E. O. Göbel
  Solid-State Electronics 37 (4 - 6) (1994), pp. 1327 - 1331
  
  Optical properties of symmetrically strained (GaIn)As/Ga(PAs) superlattices grown by metalorganic vapour phase epitaxy
  S. Lutgen, T. F. Albrecht, T. Marschner, W. Stolz, E. O. Göbel
  Solid-State Electronics 37 (4 - 6) (1994), p. 905 - 909
  
  Direct epitaxial growth of (AlGa)As/GaAs quantum wires by orientation-dependent metalorganic vapour phase epitaxy
  D. Bertram, B. Spill, W. Stolz, E. O. Göbel
  Solid-State Electronics 37 (4 - 6) (1994), pp. 591 - 596
  
  
  1993
  
  Coherent excitonic and free carrier dynamics in bulk GaAs and heterostructures
  T. Kuhn, E. Binder, F. Rossi, A. Lohner, K. Rick, P. Leisching, A. Leitenstorfer, T. Elsaesser, W. Stolz
  Proc. of the NATO Adv. Res. Workshop "Coherent optical interactions in semiconductors",
  Ed. R. T. Phillips, Cambridge (1993), Plenum Publishing Corporation (1994), ISBN 0-306-44737-1
  NATO ASI Series B 330 (1994)
  
  Improvements in the heteroepitaxial growth of GaAs on Si by MOVPE
  T. Marschner, W. Stolz, E. O. Göbel, F. Phillipp, M. Müller, J. Lorberth
  Materials Science and Engineering  B 21 (2 - 3) (1993), pp. 266 - 269
  
  Metal-organic vapour-phase epitaxial growth of symmetrically strained (GaIn)As/Ga(PAs) superlattices
  S. Lutgen, T. Marschner, T. F. Albrecht, W. Stolz, E. O. Göbel, L. Tapfer
  Materials Science and Engineering  B 21 (2 - 3) (1993), pp. 249 - 252
  
  Direct growth of (AlGa)As/GaAs quantum wires by metalorganic vapour phase epitaxy
  D. Bertram, W. Stolz, E. O. Göbel
  Journal of Crystal Growth 132 (1 - 2) (1993), pp. 179 - 180
  
  Transient four-wave mixing on (InGa)As/InP multiple quantum wells using a femtosecond optical parametric oscillator
  T. F. Albrecht, J. H. H. Sandmann, J. Feldmann, W. Stolz, E. O. Göbel, A. Nebel, C. Fallnich, and R. Beigang
  Appl. Phys. Lett. 63 (14) (1993), pp. 1945 - 1947
  
  Coherent excitonic and free-carrier polarizations of bulk GaAs studied by femtosecond photon-echo spectroscopy
  A. Lohner, K. Rick. P. Leisching, A. Leitenstorfer, T. Elsässer, T. Kuhn, F. Rossi, and W. Stolz
  Proc. 8^th Int. Conf. "Hot Carriers in Semiconductors", Oxford (1993) in
  Semiconductor Science and Technology 9 (5S) (1994), pp. 425 - 428
  
  Coherent optical polarization of bulk GaAs studied by femtosecond photon-echo spectroscopy
  A. Lohner, K. Rick, P. Leisching, A. Leitenstorfer, T. Elsässer, T. Kuhn, F. Rossi, and W. Stolz
  Phys. Rev. Lett. 71 (1) (1993), pp. 77 - 80
  
  Amino-arsine and -phosphine compounds for the MOVPE of III-V semiconductors
  G. Zimmermann, H. Protzmann, T. Marschner, O. Zsebök, W. Stolz, E. O. Göbel, P. Gimmnich, J. Lorberth, T. Filz, P. Kurpas, W. Richter
  Journal of Crystal Growth 129 (1 - 2) (1993), pp. 37 - 44
  
  New group III aluminium and gallium hydride precursors for metal-organic vapour-phase epitaxy
  R. Dorn, M. Müller, J. Lorberth, G. Zimmermann, H. Protzmann, W. Stolz, E. O. Göbel
  Materials Science and Engineering B 17 (1 - 3) (1993), pp. 25 - 28
  
  New alternative arsenic precursors for the metal-organic vapour-phase epitaxy of III-V semiconductors: in-situ formation of As-H functionality by ß elimination of specific metal-organic arsenic compounds
  P. Gimmnich, A. Greiling, J. Lorberth, C. Thalmann, K. Rademann, G. Zimmermann, H. Protzmann, W. Stolz, E. O. Göbel
  Materials Science and Engineering B 17 (1 - 3) (1993), pp. 21 - 24
  
  
  1992
  
  Synthesis of Gallane-Amine adducts as potential precursors for GaAs and (AlGa)As MOVPE processes and the crystal structure of the {gallane 1,3-bis(dimethylamino)propane} adduct H₃Ga N(CH₃)₂(CH₂)₃N(CH₃) ₂
  J. Lorberth, R. Dorn, S. Wocadlo, W. Massa, E. O. Göbel, T. Marschner, H. Protzmann, O. Zsebök, W. Stolz
  Advanced Materials 4 (9) (1992), pp. 576 - 579
  
  In-situ formation of As-H functions by ß-elimination of specific metalorganic arsenic compounds for the MOVPE of III/V semiconductors
  G. Zimmermann, H. Protzmann, W. Stolz, E. O. Göbel, P. Gimmnich, A. Greiling, J. Lorberth, C. Thalmann, K. Rademann
  Journal of Crystal Growth 124 (1 - 4) (1992), pp. 136 - 141
  
  Metalorganic vapour phase epitaxy (MOVPE) of III/V-semiconductor heterostructures using alternative precursor molecules: new developments
  W. Stolz
  Proc. 12^th General Conf. of the Condensed Matter Division of the European Physical Society, Prag (1992),
  Physica Scripta T 45 (1992), pp. 186 - 191
  
  Transient-grating experiments for the study of electron-hole separation in an electric field
  J. Feldmann, P. Grossmann, W. Stolz, E. O. Göbel, and K. Ploog
  Semiconductor Science and Technology 7 (3B) (1992), pp. B130 - B132
  
  
  1991
  
  Transient photoconductivity in amorphous Si_1-xC_x:H
  A. Pohlmann, R. Fischer, R. Brüggemann, W. Stolz, E. O. Göbel
  Journal of Non-Crystalline Solids 137 - 138 (1) (1991), pp. 547 - 550
  
  Group III hydride precursors for the metalorganic vapour phase epitaxy (MOVPE) of (AlGa)As/GaAs heterostructures
  H. Protzmann, T. Marschner, O. Zsebök, W. Stolz, E. O. Göbel, R. Dorn, J. Lorberth
  Journal of Crystal Growth 115 (1 - 4) (1991), pp. 248 - 253
  
  Halbleitmaterialien und -strukturen für die Optoelektronik und Photonik
  E. O. Göbel, W. Elsäßer, W. Stolz
  in "Halbleiter in Forschung und Technik: Grundlagen, Anwendungen und Perspektiven",
  Hrsg. J. Werner, J. Weber, W. Rühle,
  Expert Verlag Ehningen (1991), ISBN 3-8169-0707-5, p. 142
  
  Dynamics and spectral characteristics of exciton bleaching in type-II Al_xGa_1-xAs/AlAs superlattices
  J. Feldmann, E. Göbel, W. Stolz, K. Ploog, P. Dawson, C. T. Foxon
  Superlattices and Microstructures 9 (2) (1991), pp. 241 - 244
  
  Optical study of electronic states of In_0.53Ga_0.47As/In_0.52Al_0.48As quantum wells in high electric fields
  K. Satzke, G. Weiser, W. Stolz, and K. Ploog
  Phys. Rev. B 43 (3) (1991), pp. 2263 - 2271
  
  Strain relaxation and influence of residual strain in GaAs and (AlGa)As/GaAs heterostructures grown on (100) Si by molecular beam epitaxy
  W. Stolz, K. Nozawa, Y Horikoshi, L. Tapfer, K. Ploog
  Proc. of the NATO Adv. Res. Workshop "Condensed Systems of Low Dimensionality",
  Eds. J. L. Beeby, P. K. Bhattacharya, P. Ch. Gravelle, F. Koch, D. J. Lockwood, Marmaris (1990), Plenum Publishing Corporation (1991), ISBN 0-306-43887-9
  NATO ASI Series B 253 (1991)
  
  
  1990
  
  Alternative precursors for the growth of (AlGa)As/GaAs modulation-doped heterostructures by metalorganic vapor-phase epitaxy
  W. Stolz, H. Protzmann, E. Göbel, M. Hostalek, L. Pohl
  Proc. 17^th Int. Symp. "GaAs and Related Compounds", Jersey (1990)
  Inst. Phys. Conf. Ser. 112 (1990), pp. 155 - 160
  
  Transient Reshaping of intersubband absorption spectra in a ternary multiple quantum well structure
  R. J. Bäuerle, T. Elsässer, H. Lobentanzer, W. Stolz, K. Ploog
  Proc. 20^th Int. Conf. "Physics of Semiconductors", Thessaloniki (1990),
  Eds. E. M. Anastassakis, J. D. Joannopoulos, World Scientific Publishing (1990)
  
  Absorption and electroabsorption spectra of (GaIn)As/(AlIn)As quantum wells and superlattices
  K. Satzke, W. Stolz, G. Weiser
  Proc. IEEE Conf. "Modulation Spectroscopy" (1990)
  
  Influence of GaAs buffer layer growth and annealing conditions on the quality of GaAs/AlAs superlattices grown on (100) Si by molecular beam epitaxy
  W. Stolz, G. E. Crook, L. Tapfer, K. Ploog
  Proc. 1^st Int. Conf. "Epitaxial Crystal Growth", Budapest (1990)
  Ed. E. Lendvay, Trans Tech Publications Ltd. (1991), ISBN-10: 0878496165
  
  Transient intersubband absorption spectra of hot electrons in a modulation-doped (GaIn)As/(AlIn)As multiple quantum well structure
  R. J. Bäuerle, T. Elsässer, H. Lobentanzer, W. Stolz, K. Ploog
  Proc. 20^th Int. Conf. "Quantum Electronics"
  
  Radiative recombination processes and fermi edge singularity in modulation doped n-type GaInAs/AlInAs multiple quantum wells
  R. Cingolani, W. Stolz, Y. H. Zhang, K. Ploog
  Journal of Luminescence 46 (2) (1990), pp. 147 - 154
  
  Dopant incorporation in delta-doped GaAs layers studied by local vibrational-mode spectroscopy
  W. Stolz, M. Hauser, K. Ploog, M. Ramsteiner, J. Wagner
  Proc. Int. Symp. "Gallium Arsenide and Related Compounds", Bristol (1989)
  Inst. Phys. Conf. Ser. 106 (1990), pp. 465 - 470
  
  
  1989
  
  Transient reshaping of intersubband absorption spectra due to hot electrons in a modulation-doped multiple-quantum-well structure
  R. J. Bäuerle, T. Elsässer, H. Lobentanzer, W. Stolz, and K. Ploog
  Phys. Rev. B 40 (14) (1989), pp. 10002 - 10005
  
  Influence of interface quality on structural and optical properties of Ga_xIn_1-xAs/Al_yIn_1-yAs superlattices lattice matched to (001) InP
  L. Tapfer, W. Stolz, and K. Ploog
  J. Appl. Phys. 66 (7) (1989), pp. 3217 - 3219
  
  Hot carriers in (GaIn)As/(AlIn)As multiple quantum well structures studied by picoseceond infrared spectroscopy
  T. Elsässer, R. J. Bäuerle, W. Kaiser, H. Lobentanzer, W. Stolz, K. Ploog
  Conf. "Quantum Electronics and Laser Science", Techn. Digest Ser. 12, Optical Society of America, Washington (1989), p. 142
  
  Screening of the n=2 excitonic resonance by hot carriers in an undoped Ga_0.47In_0.53As/Al_0.48In_0.52As multiple quantum well structure
  H. Lobentanzer, W. Stolz, K. Ploog, R. J. Bäuerle, T. Elsässer
  Solid-State Electronics 32 (12) (1989), pp. 1875 - 1879
  
  Transient intersubband absorption spectra of hot electrons in a modulation-doped multiple-quantum-well structure
  T. Elsässer, R. J. Bäuerle, W. Kaiser, H. Lobentanzer, W. Stolz, K. Ploog
  Solid-State Electronics 32 (12) (1989), pp. 1707 - 1711
  
  Incorporation of Si in δ-doped GaAs studied by local vibrational mode spectroscopy
  J. Wagner, M. Ramsteiner, W. Stolz, M. Hauser, and K. Ploog
  Appl. Phys. Lett. 55 (10) (1989), pp. 978 - 980
  
  Electronic states and optical transitions in modulation-doped n-type Ga_xIn_1-xAs/Al_xIn_1-xAs multiple quantum wells
  R. Cingolani, W. Stolz, and K. Ploog
  Phys. Rev. B 40 (5) (1989), pp. 2950 - 2955
  
  Infrared stimulated emission in modulation doped Ga_0.47In_0.53As/Al_0.48In_0.52As quantum wells
  R. Cingolani, W. Stolz, K. Ploog, M. Ferrera, C. Moro
  Solid State Communications 72 (8) (1989), pp. 807 - 811
  
  Transient absorption spectra of a modulation-doped Ga_0.47In_0.53As/Al_0.48In_0.52As multiple quantum well structure measured by picosecond infrared pulses
  T. Elsässer, R. J. Bäuerle, W. Kaiser, H. Lobentanzer, W. Stolz, and K. Ploog
  Appl. Phys. Lett 54 (3) (1989), pp. 256 - 258
  
  Cooling of hot carriers in three- and two-dimensional Ga_0.47In_0.53As
  H. Lobentanzer, W. Stolz, J. Nagle, and K. Ploog
  Phys. Rev. B 39 (8) (1989), pp. 5234 - 5244
  
  Optimized growth start and controlled formation of misfit dislocations for heteroepitaxial GaAs on (100) Si grown by migration-enhanced epitaxy
  W. Stolz, Y. Horikoshi, M. Naganuma, K. Nozawa
  Journal of Crystal Growth 95 (1 - 4) (1989), pp. 87 - 90
  
  
  1988
  
  Picosecond infrared spectroscopy of hot carriers in a modulation-doped (GaIn)As/(AlIn)As multiple quantum well structure
  T. Elsässer, R. J. Bäuerle, W. Kaiser, H. Lobentanzer, W. Stolz, K. Ploog
  Proc. 19^th Int. Conf. "Physics of Semiconductors", Warsaw (1988), Ed. W. Zawadzki, p. 227
  
  Picosecond infrared spectroscopy of hot carriers in a (GaIn)As multiple quantum well structure
  T. Elsässer, R. J. Bäuerle, W. Kaiser, H. Lobentanzer, W. Stolz, K. Ploog
  Proc. 16^th Int. Conf. "Quantum Electronics", Tokyo (1988), p. 388
  
  Carrier cooling in modulation-doped (GaIn)As/(AlIn)As multiple quantum well structures
  H. Lobentanzer, W. Stolz, J. Nagle, K. Ploog
  Proc. 16^th Int. Conf. "Quantum Electronics", Tokyo (1988)
  
  Saturation and blue shift of the excitonic resonance in a thin Ga_0.47In_0.53As/Al_0.48In_0.52As multiple-quantum-well structure
  H. Lobentanzer, W. Stolz, and K. Ploog
  Proc. 16^th Int. Conf. "Quantum Electronics", Tokyo (1988), paper TuP27
  
  Cooling of hot carriers in three- and two-dimensional (GaIn)As
  H. Lobentanzer, W. Stolz, K. Ploog
  Proc. 6^th Int. Conf. "Ultrafast Phenomena", Kyoto (1988), Eds. T. Yajima, K. Yoshihara, C. B. Harris, S. Shionoya,
  Springer-Series in Chemical Physics Bd. 48 Berlin (1988)
  
  Intersubband absorption in a modulation-doped Ga_0.47In_0.53As/Al_0.48In_0.52As multiple quantum well structure
  H. Lobentanzer, W. König, W. Stolz, K. Ploog, T. Elsässer, R. J. Bäuerle
  Appl. Phys. Lett. 53 (7) (1988), pp. 571 - 573
  
  Picosecond infrared spectroscopy of hot carriers in a modulation-doped Ga_0.47In_0.53As multiple-quantum-well structure
  R. J. Bäuerle, T. Elsässer, W. Kaiser, H. Lobentanzer, W. Stolz, and K. Ploog
  Phys. Rev. B 38 (6) (1988), pp. 4307 - 4310
  
  Strain-released heteroexpitaxy of GaAs on (100) Si by migration enhanced epitaxy
  W. Stolz, Y. Horikoshi, M. Naganuma, K. Nozawa
  Workshop "Electronic Materials and Devices", Nagoya (1988)
  
  Controlled Formation of Misfit Dislocations for Heteroepitaxial Growth of GaAs on (100) Si by Migration-Enhanced Epitaxy
  W. Stolz, Y. Horikoshi and M. Naganuma
  Jpn. J. Appl. Phys. 27 (6A) (1988), L1140 - L1143
  
  Initial Growth Conditions of GaAs on (100) Si Grown by Migration-Enhanced Epitaxy
  W. Stolz, M. Naganuma and Y. Horikoshi
  Jpn. J. Appl. Phys. 27 (3A) (1988), L283 - L286
  
  Optical and structural properties of GaAs grown on (100) Si by molecular-beam epitaxy
  W. Stolz, F. E. G. Guimaraes, K. Ploog
  J. Appl. Phys. 63 (2) (1988), pp. 492 - 499
  
  
  1987
  
  Position and character (Ɖ or x) of energy states in short-period (GaAs)m(AlAs)n superlattices
  J. Nagle, M. Garriga, W. Stolz, T. Isu et K. Ploog
  Proc. 3^rd Int. Conf. "Modulated Semiconductor Structures", Montpellier (1987),
  Journal de Physique Colloques 48 (5C) (1987), pp. C5-495 - C5-498
  
  Absorption spectroscopy on Ga_0.47In_0.53As/Al_0.48LIn_0.52As multi-quantum-well heterostructures,
  II. Subband structure
  W. Stolz, J. C. Maan, M. Altarelli, L. Tapfer, K. Ploog
  Phys. Rev. B 36 (8) (1987), pp. 4310 - 4315
  
  Absorption spectroscopy on Ga_0.47In_0.53As/Al_0.48LIn_0.52As multi-quantum-well heterostructures,
  I. Excitonic transitions
  W. Stolz, J. C. Maan, M. Altarelli, L. Tapfer, K. Ploog
  Phys. Rev. B 36 (8) (1987), pp. 4301 - 4309
  
  Sharp Photoluminescence of GaAs/AlGaAs SQWs Grown on Si Substrate by MEE at 300°C
  M. Naganuma, W. Stolz, Y. Horikoshi
  Japan Society of Applied Physics, Proc. 19th Conf. "Solid State Devices and Materials", Tokyo (1987), p. 513
  
  Cooling of hot carriers in Ga_0.47In_0.53As
  H. Lobentanzer, H.-J. Polland, W. W. Rühle, W. Stolz, K. Ploog
  Appl. Phys. Lett. 51 (9) (1987), pp. 673 - 675
  
  Carrier cooling in undoped and modulation-doped Ga_0.47In_0.53As multiple quantum wells
  H. Lobentanzer, W. W. Rühle, H.-J. Polland, W. Stolz, and K. Ploog
  Phys. Rev. B 36 (5) (1987), pp. 2954 - 2957
  
  Cooling of an electron-hole plasma in a Ga_0.47In_0.53As multiple-quantum-well structure
  H. Lobentanzer, H.-J. Polland, W. W. Rühle, W. Stolz, and K. Ploog
  Phys. Rev. B 36 (2) (1987), pp. 1136 - 1139
  
  Cooling of photoexcited carriers in a Ga_0.47In_0.53As multiple quantum well
  H. Lobentanzer, H.-J. Polland, W. W. Rühle, W. Stolz, and K. Ploog
  Int. Conf. "Quantum Electronics" (1987), Opt. Soc. Am., paper TUGG40
  
  Hot carrier-phonon interaction in three- and two-dimensional Ga_0.47In_0.53As
  H. Lobentanzer, W. W. Rühle, W. Stolz, K. Ploog
  Solid State Communications 62 (1) (1987), pp. 53 - 56
  
  Effect of barrier configuration on excitonic recombination in Ga_0.47In_0.53As/Al_0.48In_0.52As multi quantum well structures
  W. Stolz, J. Wagner, K. Ploog
  Journal of Crystal Growth 81 (1 - 4) (1987), pp. 79 - 84
  
  Effect of Barrier Configuration and Interface Quality on Structural and Electronic Properties of MBE-Grown Al_xGa_1-xAs/GaAs, Al_xGa_1-xSb/GaSb and Al_xIn_1-xAs/Ga_xIn_1-xAs Superlattices
  K. Ploog, W. Stolz, L. Tapfer
  Chapter in: Thin Film Growth Techniques for Low-Dimensional Structures, R. F. C. Farrow, S. S. P. Parkin, P. J. Dobson, J. H. Neave, A. S. Arrott (Eds.), Springer, Boston, MA
  NATO ASI Series B 163 (1987), pp. 5 - 19
  
  
  1986
  
  Structural Characterization of Ga_0.47In_0.53As/Al_0.48In_0.52As Superlattices Grown by Molecular Beam Epitaxy
  L. Tapfer, W. Stolz, K. Ploog
  Proc. 18^th Int. Conf. "Solid State Devices and Materials" Tokyo (1986)
  Japan Society Applied Physics (1986), pp. 603 - 605
  
  High-resolution double-crystal X-ray diffraction for improved assessment of modulated semiconductor structures
  L. Tapfer, W. Stolz, A. Fischer, K. Ploog
  Surface Science 174 (1 - 3) (1986), pp. 88 - 93
  
  Effect of barrier configuration on excitonic recombination in Ga_.47In_.53As/Al_.48In_.52As multi quantum well structures
  J. Wagner, W. Stolz, J. Knecht, K. Ploog
  Solid State Communications 57 (10) (1986), pp. 781 - 784
  
  Excitonic transitions in quantum wells composed of either binary or ternary III-V semiconductors grown by molecular beam epitaxy
  J. L. de Miguel, Y. Ohmori, W. Stolz, L. Tapfer, K. Ploog, J. Wagner
  Proc. 12^th Int. Symp. "GaAs and Related Compounds" Karuizawa (1985)
  Inst. Phys. Conf. Ser. 79 (1986), pp. 457 - 462
  
  
  1985
  
  Optical and structural properties of molecular beam epitaxial grown Ga_0.47In_0.53As/Al_0.48In_0.52As superlattices, emitting at 1.55 µm at room temperature
  W. Stolz, L. Tapfer, A. Breitschwerdt & K. Ploog
  Appl. Phys. A 38 (2) (1985), pp. 97 - 102
  
  Luminescence excitation spectroscopy on Ga_0.47In_0.53As/Al_0.48In_0.52As quantum-well heterostructures
  J. Wagner, W. Stolz, and K. Ploog
  Phys. Rev. B 32 (6) (1985), pp. 4214 - 4216
  
  Free-exciton luminescence in GaSb quantum wells confined by short-period AlSb-GaSb superlattices
  K. Ploog, Y. Ohmori, H. Okamoto, W. Stolz, J. Wagner
  Appl. Phys. Lett. 47 (4) (1985), pp. 384 - 386
  
  Influence of growth conditions on the optical and structural properties of (GaIn)As/(AlIn)As superlattices grown by molecular beam epitaxy
  W. Stolz, L. Tapfer, K. Ploog
  Proc. Eur. Materials Research Society Symp. Strasbourg (1985)
  J. de Phys. Suppl. (1985), p. 219
  
  Luminescence of (GaIn)As/(AlIn)As quantum well heterostructures grown by molecular beam epitaxy
  W. Stolz, K. Fujiwara, L. Tapfer, H. Oppolzer, K. Ploog
  Proc. 11^th Int. Symp. "GaAs and Related Compounds" Biarritz (1984)
  Inst. Phys. Conf. Ser. 74 (1985), p. 139
  
  
  1982
  
  Impurity Diffusion in Amorphous Silicon and its Implications for Solar Cells
  S. Kalbitzer, M. Reinelt & W. Stolz
  In: W. H. Bloss, G. Grassi (Eds.) Fourth E.C. Photovoltaic Solar Energy Conference, Springer Dordrecht
  Proc. 4^th Int. Conf. "Photovoltaic Solar Energy" Stresa (1982), pp. 1059 - 1062