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In-situ characterization of surfaces
The understanding of the local bonding configuration on the epitaxial surface as well as the characteristic surface reconstruction during the epitaxial growth is of key importance for the realization of defect-free epitaxial semiconductor layers. The characteristic surface configurations during epitaxial growth in the vapour phase at elevated temperatures are analyzed by means of in-situ optical spectroscopy using reflection anisotropy spectroscopy (RAS).