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Integration of III/V-semiconductors on Si and Ge

This research field is motivated by the wide range of possible applications of the unique optoelectronic and photonic functionalities of III/V-semiconductors combined with the electronic properties of group-IV-materials,
i. e. silicon (Si) or germanium (Ge). We study the fundamental physical properties of novel III/V-semiconductor materials from structural, electronic as well as optoelectronic and photonic point of view. At present we concentrate on the defect-free, lattice-matched deposition of the respective monolithically integrated epitaxial layers in particular for the realization of novel laser concepts on Si- and of improved solar cell layers on Ge-substrate.