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Metastable III/V-semiconductors

Ternary and quaternary metastable III/V-semiconductor alloys are characterized by the strongly different physical properties of the constituent binary III/V-compounds, i. e. with respect to bond length or lattice-constant and/or varying electro-negativity etc. Model systems for such metastable III/V-alloys are (GaIn)(NAs) or Ga(AsBi) on GaAs- or Ga(NAsP) on Si-substrate. These systems possess a unique band structure formation process, which is elaborated quantitatively. We investigate the characteristic structural properties of these novel compounds as a function of the epitaxial deposition conditions and establish the correlation to the electrical transport as well as to the optoelectronic properties.