Hauptinhalt

Selected Publications of Prof. Sergei Baranovskii

    Book contributions

      Edited Book: "Charge Transport in Disordered Solids with Applications in Electronics", edited by Sergei Baranovski (John Wiley and Sons, Ltd., Chichester, England, 2006).

        Edited Book: "Transport in Interacting Disordered Systems, 12th International Conference (TIDS12)", edited by Sergei Baranovski (Guest Editor, Wiley-VCH, Berlin, Germany, 2008).

          Book Chapter: S.D. Baranovskii, O. Rubel, F. Jansson, R. Österbacka, "Description of Charge Transport in Disordered Organic Materials", in "Advances in Polymer Science", eds. G. Meller, T. Grasser, (Springer, Berlin, Heidelberg, 2010).

            Book Chapter: S.D. Baranovskii and O. Rubel, “Description of Charge Transport in Disordered Materials” in "Springer Handbook of Electronic and Photonic Materials", edited by S. Kasap and P. Capper (Springer, 2006), Chap. 9, pp. 161-186.

              Book Chapter: S.D. Baranovskii and O. Rubel, “Description of charge transport in amorphous semiconductors” in "Charge Transport in Disordered Solids with Applications in Electronics", edited by S.D. Baranovskii (John Wiley and Sons, Ltd., Chichester, England, 2006), Chap. 2, pp. 49-96.

                Book Chapter: S.D. Baranovskii and O. Rubel, “Description of charge transport in disordered organic materials” in "Charge Transport in Disordered Solids with Applications in Electronics", edited by S.D. Baranovskii (John Wiley and Sons, Ltd., Chichester, England, 2006), Chap. 6, pp. 221-266.

                  Book Chapter: B.I. Shklovskii, E.I. Levin, H. Fritzsche, S.D. Baranovskii "Hopping Photoconductivity in Amorphous Semiconductors: Dependence on Temperature, Electric Field and Frequency" "Advances in Disordered Semiconductors, Vol.3 (Transport, Correlation and Structural Defects)" ed. H. Fritzsche (World Scientific, Singapore, 1991), pp.161-191.

                    Review articles

                        Review Article: S. D. Baranovskii, "Mott Lecture: Description of Charge Transport in Disordered Organic Semiconductors: Analytical Theories and Computer Simulations", Phys. Stat. Solidi A 215, 1700676 (2018). pss(a) text

                          Review Article: A. V. Nenashev, J. O. Oelerich, and S. D. Baranovskii, "Theoretical tools for description of charge transport in disordered organic semiconductors", J. Phys.: Condens Matter 27, 093201 (2015). J. Phys. Cond. Matter text

                            Review Article: S. D. Baranovskii, "Theoretical description of charge transport in disordered organic semiconductors", Phys. Stat. Solidi B 251, 487-525 (2014). pss(b) text

                              Review Article: S. D. Baranovskii, M. Wiemer, A. V. Nenashev, F. Jansson, and F. Gebhard, "Calculating the Efficiency of Exciton Dissociation at the Interface between a Conjugated Polymer and an Electron Acceptor", J. Phys. Chem. Lett. (Perspectives) 3, 1214 (2012). J. Phys. Chem. Lett. text

                                Feature Article: P. Dawson, E. O. Göbel, K. Pierz, O. Rubel, S. D. Baranovskii, and P. Thomas "Relaxation and recombination in InAs quantum dots", Phys. Stat. Solidi B 244, 2803 (2007). pss(b) text

                                  Review Article: S.D. Baranovskii and V.G. Karpov "Localized Electron States in Semiconductor Glasses" Sov. Phys. Semicond. 21, 1 (1987).

                                    Selected papers

                                    1. A. V. Nenashev, J. O. Oelerich, S.H.M. Greiner, A. V. Dvurechenskii, F. Gebhard, and S. D. Baranovskii, "Percolation description of charge transport in amorphous oxide semiconductors", Phys. Rev. B 100, 125202 (2019). PRB text
                                    2. A. V. Nenashev, V. V. Valkovskii, J. O. Oelerich, A. V. Dvurechenskii, O. Semeniuk, A. Reznik, F. Gebhard, and S. D. Baranovskii, "Release of carriers from traps enhanced by hopping", Phys. Rev. B 98, 155207 (2018). PRB text
                                    3. A. V. Nenashev, J. O. Oelerich, K. Jandieri, V.V. Valkovskii, O. Semeniuk, A. V. Dvurechenskii, F. Gebhard, G. Juska, A. Reznik, and S. D. Baranovskii, "Field-enhanced mobility in the multiple-trapping regime", Phys. Rev. B 98, 035201 (2018). PRB text
                                    4. J. O. Oelerich, A. V. Nenashev, A. V. Dvurechenskii, F. Gebhard, and S. D. Baranovskii, "Field dependence of hopping mobility: Lattice models against spatial disorder", Phys. Rev. B 96, 195208 (2017). PRB text
                                    5. A. V. Nenashev, J. O. Oelerich, A. V. Dvurechenskii, F. Gebhard, and S. D. Baranovskii, "Fundamental characteristic length scale for the field dependence of hopping charge transport in disordered organic semiconductors", Phys. Rev. B 96, 035204 (2017). PRB text
                                    6. A. V. Nenashev, M. Wiemer, A. V. Dvurechenskii, L.V. Kulik, A.B. Pevtsov, F. Gebhard, M. Koch, and S. D. Baranovskii, "Analytical theory for charge carrier recombination in blend organic solar cells", Phys. Rev. B 95, 104207 (2017). PRB text
                                    7. M. Wiemer, K. Jandieri, M. Koch, F. Gebhard, S. D. Baranovskii, "Band edge smearing due to compositional disorder in multi-component d-dimensional alloys", Phys. Stat. Solidi (b) - Rapid Research Letters (RRL), 10, 911 (2016). RRL text
                                    8. O. Semeniuk, G. Juska, J.-O. Oelerich, M. Wiemer, S.D. Baranovskii, A. Reznik "Charge transport mechanism in lead oxide revealed by CELIV technique", Scientific Reports 6, 33359 (2016). Sci. Rep. text
                                    9. A. V. Nenashev, M. Wiemer, A. V. Dvurechenskii, F. Gebhard, M. Koch, and S. D. Baranovskii, "Why the apparent order of bimolecular recombination in blend organic solar cells can be larger than two: a topological consideration", Appl. Phys. Lett. 109, 033301 (2016). APL text
                                    10. A. Beyer, A. Stegmüller, J.- O. Oelerich, K. Jandieri, K. Werner, G. Mette, W. Stolz, S. D. Baranovskii, R. Tonner, and K. Volz "Pyramidal Structure Formation at the Interface between III/V Semiconductors and Silicon", Chem. Mater. 28, 3265 (2016). Chem. Mater. text
                                    11. A. V. Nenashev, F. Jansson, M. Wiemer, S. Petznick, P. J. Klar, M. Hetterich, A. V. Dvurechenskii, F. Gebhard, and S. D. Baranovskii, "Scaling approach to hopping magnetoresistivity in dilute magnetic semiconductors", Phys. Rev. B 88, 115210 (2013). PRB text
                                    12. A. V. Nenashev, F. Jansson, J. O. Oelerich, D. Huemmer, A. V. Dvurechenskii, F. Gebhard, and S. D. Baranovskii, "Advanced percolation solution for hopping conductivity", Phys. Rev. B 87, 235204 (2013). PRB text
                                    13. K. Jandieri, B. Kunert, S. Liebich, M. Zimprich, K. Volz, W. Stolz, F. Gebhard, and S. D. Baranovskii, N. Koukourakis, N. C. Gerhardt, and M. R. Hofmann, "Nonexponential photoluminescence transients in a Ga(NAsP) lattice matched to a (001) silicon substrate", Phys. Rev. B, 87, 035303 (2013). PRB text
                                    14. J. O. Oelerich, D. Huemmer, and S. D. Baranovskii, "How to Find Out the DOS in Disordered Organic Semiconductors", Phys. Rev. Lett. 108, 226403 (2012). PRL text
                                    15. K. Jandieri, M. K. Shakfa, S. Liebich, M. Zimprich, B. Kunert, C. Karcher, A. Chernikov, K. Volz, W. Stolz, M. Koch, S. Chatterjee,W. Heimbrodt, F. Gebhard, and S. D. Baranovskii, "Energy scaling of compositional disorder in Ga(N,P,As)/GaP quantum well structures", Phys. Rev. B 86, 125318 (2012). PRB text
                                    16. A. Reznik, K. Jandieri, F. Gebhard, S. D. Baranovskii , "Non-Onsager mechanism of longwave photogeneration in amorphous selenium at high electric fields", Appl.Phys. Lett. 100, 132101 (2012). APL text
                                    17. A. V. Nenashev, D. Baranovskii, M. Wiemer, F. Jansson, R. Oesterbacka, A. V. Dvurechenskii, and F. Gebhard, "Theory of exciton dissociation at the interface between a conjugated polymer and an electron acceptor", Phys. Rev. B 84, 035210 (2011). PRB text
                                    18. M. Wiemer , A. V. Nenashev , F. Jansson, S. D. Baranovskii, "On the efficiency of exciton dissociation at the interface between a conjugated polymer and an electron acceptor", Appl. Phys. Lett. 99, 013302 (2011). APL text
                                    19. C. Karcher, K. Jandieri, B. Kunert, R. Fritz, M. Zimprich, K. Volz, W. Stolz, F. Gebhard, S. D. Baranovskii, and W. Heimbrodt, "Peculiarities of the photoluminescence of metastable Ga(N,As,P)/GaP quantum well structures", Phys. Rev. B 82, 245309 (2010). PRB text
                                    20. J. O. Oelerich, D. Huemmer, M. Weseloh, and S. D. Baranovskii, "Concentration dependence of the transport energy level for charge carriers in organic semiconductors", Appl.Phys. Lett. 97, 143302 (2010). APL text
                                    21. A. V. Nenashev, F. Jansson, S. D. Baranovskii, R. Österbacka, A. V. Dvurechenskii, and F. Gebhard, "Role of Diffusion in Two-dimensional Bimolecular Recombination", Appl.Phys. Lett. 96, 213304 (2010). APL text
                                    22. A. V. Nenashev, F. Jansson, S. D. Baranovskii, R. Österbacka, A. V. Dvurechenskii, and F. Gebhard, "Effect of electric field on diffusion in disordered materials. I. One-dimensional hopping transport", Phys. Rev. B 81, 115203 (2010) PRB text
                                    23. A. V. Nenashev, F. Jansson, S. D. Baranovskii, R. Österbacka, A. V. Dvurechenskii, and F. Gebhard, "Effect of electric field on diffusion in disordered materials. II. Two- and three-dimensional hopping transport", Phys. Rev. B 81, 115204 (2010). PRB text
                                    24. C. Michel, A. Gliesche, S. D. Baranovskii, K. Lips, F. Gebhard and C. Boehme, "Influence of disorder on the spin-dependent transition rates through spin pairs under strong coherent excitation", Phys. Rev. B 79, 052201 (2009). PRB text
                                    25. O. Rubel, S. D. Baranovskii, W. Stolz, and F. Gebhard, "Exact solution for hopping dissociation of germinate electron-hole pairs in a disordered chain", Phys. Rev. Lett. 100, 196602 (2008). PRL text
                                    26. Robert E. Tallman, A. Reznik, B. A. Weinstein, S. D. Baranovskii, J.A. Rowlands, "Similarities in the kinetics of photo-crystallization and photo-darkening in a-Se", Appl. Phys. Lett. 93, 212103 (2008). APL text
                                    27. A.V. Nenashev, F. Jansson, S. D. Baranovskii, R. Österbacka, A.V. Dvurechenskii, and F. Gebhard, "Hopping conduction in strong electric fields: Negative dfferential conductivity", Phys. Rev. B 78, 165207 (2008). PRB text
                                    28. F. Jansson, S. D. Baranovskii, F. Gebhard, and R. Österbacka, "Effective temperature for hopping transport in a Gaussian DOS", Phys. Rev. B 77, 195211 (2008). PRB text
                                    29. C. Michel, M. T. Elm, B. Goldlücke, S. D. Baranovskii, P. Thomas, W. Heimbrodt, and P. J. Klar, "Tailoring the magnetoresistance of MnAs/GaAs:Mn granular hybrid nanostructures", Appl. Phys. Lett. 92, 223119 (2008). APL text
                                    30. A. Gliesche, C. Michel, V. Rajevac, K. Lips, S.D. Baranovskii, F. Gebhard and C. Boehme, "Spin-dependent transition rates through exchange coupled localized spin pairs during coherent spin excitation", Phys. Rev. B 77, 245206 (2008). PRB text
                                    31. K. Jandieri, S.D. Baranovskii, O. Rubel, W. Stolz, F. Gebhard, W. Guter, M. Hermle, and A.W. Bett, "Resonant tunneling as a dominant transport mechanism in n-GaAs/p-GaAs tunnel diodes", Appl. Phys. Lett. 92, 243504 (2008). APL text
                                    32. O. Rubel, W. Stolz, and S. D. Baranovskii "Spectral dependence of the photoluminescence decay in disordered semiconductors", Appl. Phys. Lett. 91, 021903 (2007). APL text
                                    33. V. Rajevac, Ch. Boehme, Ch. Michel, A. Gliesche, K. Lips, S.D. Baranovskii, and P. Thomas "Spin–dependent transition rates of weakly coupled localized spin pairs in semiconductors during coherent magnetic resonant excitation", Phys. Rev. B. 74, 245206 (2006). PRB text
                                    34. C. Michel, S.D. Baranovskii, P. Klar, S.D. P. Thomas, B. Goldlücke "Strong non-Arrhenius temperature dependence of the resistivity in the regime of traditional band transport ", Appl. Phys. Lett. 89, 112116 (2006). APL text
                                    35. O. Rubel, B. Kunert, S. D. Baranovskii, F. Grosse, K. Volz and W. Stolz "Modelling of annealing induced short-range order effects in (GaIn)(NP) alloys", Phys. Rev. B 74, 195206 (2006). PRB text
                                    36. O. Rubel, S. D. Baranovskii, K. Hantke, B. Kuenert, W.W. Rühle, P. Thomas, K. Volz and W. Stolz "On temperature quenching of photoluminescence in disordered semiconductor heterostructures", Phys. Rev. B 73, 233201 (2006). PRB text
                                    37. K. Volz, O. Rubel, T. Torunski, S. D. Baranovskii, W. Stolz "Nanoanalytical quantification of the nitrogen content in Ga(NAs)/GaAs by using transmission electron microscopy in combination with refined structure factor", Appl. Phys. Lett. 88, 081910 (2006). APL text
                                    38. P. Dawson, O. Rubel, S. D. Baranovskii, K. Pierz, P. Thomas, and E. O. Göbel, "Temperature Dependent Optical Properties of InAs/GaAs Quantum Dots: Independent Carrier versus Exciton Relaxation ", Phys. Rev. B 72, 235301 (2005). PRB text
                                    39. J. Matulewski, S.D. Baranovskii, P. Thomas "Effects of dynamic disorder on the charge transport via DNA molecules ", Phys. Chem. Chem. Phys. 7, 1514 (2005). PCCP text
                                    40. O. Rubel, K. Volz, T. Torunski, S.D. Baranovskii, F. Grosse, W. Stolz "Columnar [001]-oriented nitrogen order in Ga(NAs) and (GaIn)(NAs) alloys", Appl. Phys. Lett. 85, 5908 (2004). APL text
                                    41. J. Matulewski, S.D. Baranovskii, P. Thomas "Base sequence dependence of charge transport via short DNA bridges ", Phys. Stat. Solidi (b) - Rapid Research Letters (RRL) 241, R46 (2004). RRL text
                                    42. C. Michel, P. Klar, S.D. Baranovskii, P. Thomas "Influence of magnetic-field induced tuning of disorder and band structure on the magnetoresistance of dilute magnetic semiconductors", Phys. Rev. B 69, 165211 (2004). PRB text
                                    43. B. Dal Don, K. Kohary, E. Tsitsishvili, S.D. Baranovskii, P. Thomas, and H. Kalt "Quantitative interpretation of the phonon-assisted redistribution processes of excitons in Zn(1-x)CdxSe quantum islands", Phys. Rev. B 69, 045318 (2004). PRB text
                                    44. O. Rubel, S.D. Baranovskii, P. Thomas, and S. Yamasaki "Concentration dependence of the hopping mobility in disordered organic solids ", Phys. Rev. B 69, 014206 (2004). PRB text
                                    45. K. Kohary, H. Cordes, S.D. Baranovskii, P. Thomas, and J.-H. Wendorff "Hopping transport in 1D chains (DNA vs. DLC)", phys. stat. sol. (b) 241, 76 (2004). pss(b) text
                                    46. S.D. Baranovskii, I.P. Zvyagin, H. Cordes, S. Yamasaki and P. Thomas "Percolation Approach to Hopping Transport in Organic Disordered Solids" phys. stat. sol. (b) 230, 281 (2002). pss(b) text
                                    47. S.D. Baranovskii, H. Cordes, K. Kohary, and P. Thomas "On the Disorder-Enhanced Diffusion in Aromatic Melts" Philos. Mag. B 81, 955 (2001). via TIB
                                    48. K. Kohary, S.D. Baranovskii, H. Cordes, P. Thomas, F. Hensel, S. Yamasaki and J.-H. Wendorff "One-Dimensional Hopping Transport in Disordered Organic Solids. II. Computer Simulations" Phys. Rev. B. 63, 094202-1 (2001). PRB text
                                    49. H. Cordes, S.D. Baranovskii, K. Kohary, P. Thomas, F. Hensel, S. Yamasaki and J.-H. Wendorff "One-Dimensional Hopping Transport in Disordered Organic Solids. I. Analytic Calculations" Phys. Rev. B. 63, 094201-1 (2001). PRB text
                                    50. H. Uchtmann, S.Yu. Kazitsyna, S.D. Baranovskii, and F. Hensel "Light-Induced Nucleation and Optical Absorption in Cesium Vapor" J. Chem. Phys. 113, 4171 (2000). J. Chem. Phys. text
                                    51. S.D. Baranovskii, H. Cordes, S. Yamasaki and G. Weiser "On the Carrier Mean Free Path in GaxIn1-xAs Mixed Crystals" phys. stat. sol. (b) 218, R7 (2000). pss(b) text
                                    52. S.D. Baranovskii, H. Cordes, F. Hensel and G. Leising "On the Description of Charge Carrier Transport in Disordered Organic Solids" Phys. Rev. B. 62, 7934 (2000). PRB text
                                    53. V.I. Kozub, S.D. Baranovskii, I. Shlimak "Fluctuation-Stimulated Variable-Range Hopping" Solid State Commun. 113, 587 (2000). Sol. State. Commun. text
                                    54. H. Cordes and S.D. Baranovskii "On the Conduction Mechanism in Ionic Glasses" phys. stat. sol. (b) 218,133 (2000). pss(b) text
                                    55. S.D. Baranovskii and T. Faber "Transport Energy for Förster Prosesses" phys. stat. sol. (b) 218, 59 (2000). pss(b) text
                                    56. S.D. Baranovskii and H. Cordes "On the Transport Mechanism in Ionic Glasses" J. Chem. Phys. 111, 7546 (1999). J. Chem. Phys. text
                                    57. I. Shlimak, K.-J. Friedland, and S.D. Baranovskii "Hopping Conductivity in Gated GaAs: Universality of Prefactor" Solid State Commun. 112, 21 (1999). Sol. State. Commun. text
                                    58. S.D. Baranovskii and I. Shlimak "Novel Transport Mechanism for Interacting Electrons in Disordered Systems: Variable-Range Resonant Tunneling" preprint cond.mat/9810363. Cond.Mat. text
                                    59. S.D. Baranovskii, Comment on "Absence of Carrier Hopping in Porous Silicon" Phys. Rev. Lett. 81, 3804 (1998). PRL text
                                    60. S.D. Baranovskii, R. Eichmann, P. Thomas "Temperature-dependent Exciton Luminescence in Quantum Wells: Computer Simulation" Phys. Rev. B 58, 13081 (1998). PRB text
                                    61. S.D. Baranovskii, T. Faber, F. Hensel, P. Thomas "On the Einstein Relation for Hopping Electrons" J. Non-Cryst. Solids 227-230, 158 (1998). JNCS text
                                    62. S.D. Baranovskii, T. Faber, F. Hensel, P. Thomas "On the Einstein Relation for Hopping Electrons" phys. stat. sol. (b) 205, 87 (1998). pss(b) text
                                    63. H. Uchtmann, R. Dettmer, S.D. Baranovskii, F. Hensel "Photoinduced Nucleation in Supersaturated Mercury Vapor" J. Chem. Phys. 108, 9775 (1998). J. Chem. Phys. text
                                    64. J.E. Golub, S.D. Baranovskii, P. Thomas "Role of Interactions in the Energy-Loss Hopping and Recombination of Two-Dimensional Electrons and Holes" Phys. Rev. B 55, 4575 (1997). PRB text
                                    65. J. Golub, S.D. Baranovskii, P. Thomas "Evidence for Dipole-Dipole Hopping of GaAs Quantum Well Excitons" Phys. Rev. Lett. 78, 4261 (1997). PRL text
                                    66. S.D. Baranovskii, M. Zhu, F. Hensel, P. Thomas, M.B. von der Linden, W.F. van der Weg "Thermally Stimulated Conductivity in Disordered Semiconductors at Low Temperatures" Phys. Rev. B 55, 16226 (1997). PRB text
                                    67. S.D. Baranovskii, T. Faber, F. Hensel, P. Thomas "On the Applicability of the Transport-Energy Concept to Various Disordered Materials" J. Phys.: Cond. Matter 9, 2699 (1997). J. Phys. text
                                    68. S.D. Baranovskii, F. Hensel, J.E. Golub, P. Thomas "Long-Time Asymptotics in the Diffusion-Controlled A + B -> Reaction with Hopping Energy Relaxation" J. Chem. Phys. 106, 3157 (1997). J. Chem. Phys. text
                                    69. S.D. Baranovskii, T. Faber, F. Hensel, P. Thomas, G.J. Adriaenssens "Einstein Relationship for Hopping Electrons" J. Non-Cryst. Solids 198-200, 214 (1996). JNCS text
                                    70. I Shlimak, M. Kaveh, R. Ussyshkin, V. Ginodman, S.D. Baranovskii, H. Vaupel, P. Thomas, R.W. van der Heijden "Temperature-Induced Smearing of the Coulomb Gap by Hopping Electrons" Phys. Rev. Lett. 75, 4764 (1995). PRL text
                                    71. S.D. Baranovskii, R. Dettmer, F. Hensel, H. Uchtmann "On the Time Decay of the Photoinduced Condensation in Supersaturated Vapors" J. Chem. Phys. 103, 7796 (1995). J. Chem. Phys. text
                                    72. B. Cleve, B. Hartenstein, S.D. Baranovskii, M. Scheidler, P. Thomas, H. Baessler "High-Field Hopping Transport in Band Tails of Disordered Semiconductors" Phys. Rev. B 51, 16705 (1995). PRB text
                                    73. G.J. Adriaenssens, S.D. Baranovskii, W. Fuhs, J. Jansen, Ö. Öktü "Photoconductivity Response Time in Amorphous Semiconductors" Phys. Rev. B 51, 9661 (1995). PRB text
                                    74. S.D. Baranovskii, P. Thomas, G.J. Adriaenssens "The Concept of Transport Energy and ist Application to Steady-State Photoconductivity in Amorphous Silicon" J. Non-Cryst. Solids 190, 283 (1995). JNCS text
                                    75. S.D. Baranovskii, F. Hensel, K. Ruckes, P. Thomas, G.J. Adriaenssens "On the Potential Fluctuations in Amorphous Silicon" J. Non-Cryst. Solids 190, 117 (1995). JNCS text
                                    76. S.D. Baranovskii, U. Doerr, P. Thomas, A. Naumov, W. Gebhardt "Exciton Line Broadening by Compositional Disorder in ZnSexTe1-x Quantum Wells" Solid State Commun. 89, 5 (1994). Sol. State. Commun. text
                                    77. S.D. Baranovskii, U. Doerr, P. Thomas, A. Naumov, W. Gebhardt "Exciton Line Broadening by Compositional Disorder in Alloy Quantum Wells" Phys. Rev. B 48, 17149 (1993). PRB text
                                    78. S.D. Baranovskii and P. Thomas Comment on "Phase Transition of an Exciton System in GaAs Coupled Quantum Wells" and "Fermi-Dirac Distribution of Excitons in Coupled Quantum Wells" Phys. Rev. Lett. 69, 993 (1992). PRL text
                                    79. U. Siegner, D. Weber, E.O. Goebel, D. Benhardt, V. Heukeroth, S.D. Baranovskii, R. Saleh, P. Thomas, H. Schwab, C. Klingshirn, V.G. Lysenko, J.M. Hvam "Optical Dephasing in Semiconductor Mixed Crystals" Phys. Rev. B 46, 4564 (1992). PRB text
                                    80. S.D. Baranovskii, P. Thomas, H. Vaupel "Electron Glass Transition in a Lightly Doped Semiconductor" Philos. Mag. B 65, 685 (1992). text via TIB
                                    81. S.D. Baranovskii, P. Thomas, H. Vaupel "Temperature Dependence of the Linewidth of Shallow Impurity Spectral Lines in Lightly Doped Weakly Compensated Semiconductors" J. Appl. Phys. 71, 2452 (1992). JAP text
                                    82. H. Kalt, J. Collet, S.D. Baranovskii, R. Saleh, P. Thomas, Le Si Dang, J. Cibert "Optical- and Acoustic - Phonon Assisted Hopping of Localized Excitons in CdTe/ZnTe Quantum Wells" Phys. Rev. B 45, 4253 (1992). PRB text
                                    83. S.D. Baranovskii "Theoretical Basis for Qantitative Characterization of Impurities in n-Type III-V Semiconductors by Photoelectromagnetic Spectroscopy" Appl. Surface Science 50, 218 (1990). Appl. Surf. Sci. text or via HeBIS
                                    84. S.D. Baranovskii and M. Silver "The Effect of Long-Range Coulomb Potential on the Electronic Structure of Localized States in Homogeneous Intrinsic Amorphous Semiconductors" Philos. Mag. Lett. 61, 77 (1990). text via TIB
                                    85. A.G. Abdukadirov, S.D. Baranovskii, S.Yu. Verbin, E.L. Ivchenko, A.Yu. Naumov, A.N. Reznitsky "Photoluminescence and Tunneling Relaxation of Localized Excitons in A2B6 Anion Solid Solutions" Sov. Phys. JETP 71, 1155 (1990). JETP text
                                    86. M.E. Raikh, S.D. Baranovskii, B.I. Shklovskii "Dimensional Quantization in a-Si:H Quantum Well Structures: the Alloy Model" Phys. Rev. B 41, 7701 (1990). PRB text
                                    87. S.D. Baranovskii, B.L. Gelmont, V.G. Golubev, V.I. Ivanov-Omskii, A.V. Osutin "Spectroscopic Determination of the Compensation Degree and of the Impurity Concentration in High-Purity GaAs" Sov. Phys. Semicond. 23, 891 (1989). FTP text
                                    88. B.I. Shklovskii, H. Fritzsche, S.D. Baranovskii "Electronic Transport and Recombination in Amorphous Semiconductors at Low Temperatures" Phys. Rev. Lett. 62, 2989 (1989). PRL text
                                    89. S.D. Baranovskii, H. Fritzsche, E.I. Levin, I.M. Ruzin, B.I. Shklovskii "Theory of Photoconductivity and Photoluminescence in Amorphous Semiconductors at Low Temperatures" Sov. Phys. JETP 69, 773 (1989). JETP text
                                    90. S.D. Baranovskii and B.I. Shklovskii "Two Models of Tunnel Radiative Recombination in Disordered Semiconductors" Sov. Phys. Semicond. 23, 88 (1989). FTP text
                                    91. S.D. Baranovskii, V.G. Karpov, B.I. Shklovskii "Non-Radiative Recombination in Non-Crystalline Semiconductors" Sov. Phys. JETP 67, 588 (1988). JETP text
                                    92. S.D. Baranovskii, B.L. Gelmont, V.G. Golubev, V.I. Ivanov-Omskii, A.V. Osutin "Temperature Dependence of the Lineshape of 1s->2p Photothermal Ionization of Donors in GaAs" Sov. Phys. JETP Lett. 46, 510 (1987). JETP Lett text
                                    93. S.D. Baranovskii, E.L. Ivchenko, B.I. Shklovskii "A Novel Tunneling Recombination Regime for Photoexcited Carriers in Amorphous Semiconductors" Sov. Phys. JETP 65, 1260 (1987). JETP text
                                    94. S.D. Baranovskii, B.I. Shklovskii, A.L. Efros "Screening in a System with Localized Electrons" Sov. Phys. JETP 60, 1031 (1984). JETP text
                                    95. S.D. Baranovskii, A.A. Uzakov, A.L. Efros "Thermodynamic Properties of Impurity Band Electrons" Sov. Phys. JETP 56, 422 (1982). JETP text
                                    96. S.D. Baranovskii, A.L. Efros, B.I. Shklovskii "Elementary Excitations in Disordered Systems with Localized Electrons" Sov. Phys. JETP 51, 199 (1980). JETP text
                                    97. S.D. Baranovskii and A.A. Uzakov "On the High-Frequency Impurity Hopping Conductivity" Solid State Commun. 36, 829 (1980). Sol. State. Commun. text
                                    98. S.D. Baranovskii, A.L. Efros, B.L. Gelmont, B.I. Shklovskii "Coulomb Gap in Disordered Systems: Computer Simulation" J. Phys. C: Solid State Phys. 12, 1023 (1979). J. Phys. C text
                                    99. S.D. Baranovskii, A.L. Efros, B.L. Gelmont, B.I. Shklovskii "Coulomb Gap in Disordered Systems" Solid State Commun. 27, 1 (1978). Sol. State. Commun. text
                                    100. S.D. Baranovskii and A.L. Efros "Band Edge Smearing in Solid Solutions" Sov. Phys. Semicond. 12, 1328 (1978).