Main Content

Publications of Prof. Sergei Baranovskii

  1. B. V. Senkovskiy, A. V. Nenashev, S. K. Alavi, Y. Falke1, M. Hell1, P. Bampoulis, D. V. Rybkovskiy, D. Yu. Usachov, A. V. Fedorov, A. I. Chernov, F. Gebhard, K. Meerholz, D. Hertel, M. Arita, T. Okuda, K. Miyamoto, K. Shimada, F. R. Fischer, T. Michely, S. D. Baranovskii, K. Lindfors, T. Szkopek, and A. Grüneis, “Tunneling current modulation in atomically precise graphene nanoribbon heterojunctions”, Nature Commun. 12:2542 |(2021). Nature Comm. text
    1. H. Masenda, L. M. Schneider, M. A. Aly, S. J. Machchhar, A. Usman, K. Meerholz, F. Gebhard, S. D. Baranovskii, and M. Koch, “Energy Scaling of Compositional Disorder in Ternary Transition-Metal Dichalcogenide Monolayers”, Adv. Electron. Mater. 2100196 (2021). Adv. Electron. Mater. text
        1. Y. Lee, S. Yung, A. Plews, A. Nejim , O. Simonetti, L. Giraudet, S. D. Baranovskii, F. Gebhard, K. Meerholz, S. Jung, G. Horowitz, and Y. Bonnassieux, “Parametrization of the Gaussian Disorder Model to Account for the High Carrier Mobility in Disordered Organic Transistors” Phys. Rev. Appl. 15, 024021 (2021). PRAppl text
            1. S. D. Baranovskii, A. V. Nenashev, J. O. Oelerich, S.H.M. Greiner, A. V. Dvurechenskii, and F. Gebhard, "Percolation description of charge transport in the random barrier model applied to amorphous oxide semiconductors", Europhys. Lett. 127, 57004 (2019). EPL text
            2. A. V. Nenashev, J. O. Oelerich, S.H.M. Greiner, A. V. Dvurechenskii, F. Gebhard, and S. D. Baranovskii, "Percolation description of charge transport in amorphous oxide semiconductors", Phys. Rev. B 100, 125202 (2019). PRB text
            3. A. V. Nenashev, V. V. Valkovskii, J. O. Oelerich, A. V. Dvurechenskii, O. Semeniuk, A. Reznik, F. Gebhard, and S. D. Baranovskii, "Release of carriers from traps enhanced by hopping", Phys. Rev. B 98, 155207 (2018). PRB text
            4. Review Article: S. D. Baranovskii, "Mott Lecture: Description of Charge Transport in Disordered Organic Semiconductors: Analytical Theories and Computer Simulations", Phys. Stat. Solidi A 215, 1700676 (2018). pss(a) text
            5. A. V. Nenashev, J. O. Oelerich, K. Jandieri, V.V. Valkovskii, O. Semeniuk, A. V. Dvurechenskii, F. Gebhard, G. Juska, A. Reznik, and S. D. Baranovskii, "Field-enhanced mobility in the multiple-trapping regime", Phys. Rev. B 98, 035201 (2018). PRB text
            6. V. Valkovskii, K. Jandieri, F. Gebhard, S. D. Baranovskii, "Rethinking the theoretical description of photoluminescence in compound semiconductors", J. Appl. Phys. 123, 055703 (2018). JAP text
            7. J. O. Oelerich, A. V. Nenashev, A. V. Dvurechenskii, F. Gebhard, and S. D. Baranovskii, "Field dependence of hopping mobility: Lattice models against spatial disorder", Phys. Rev. B 96, 195208 (2017). PRB text
            8. A. V. Nenashev, J. O. Oelerich, A. V. Dvurechenskii, F. Gebhard, and S. D. Baranovskii, "Fundamental characteristic length scale for the field dependence of hopping charge transport in disordered organic semiconductors ", Phys. Rev. B 96, 035204 (2017). PRB text
            9. A. V. Nenashev, M. Wiemer, A. V. Dvurechenskii, L.V. Kulik, A.B. Pevtsov, F. Gebhard, M. Koch, and S. D. Baranovskii, "Analytical theory for charge carrier recombination in blend organic solar cells", Phys. Rev. B 95, 104207 (2017). PRB text
            10. J. O. Oelerich, L. Duschek, J. Belz, A. Beyer, S. D. Baranovskii, K. Volz, "STEMsalabim: A high-performance computing cluster friendly code for scanning transmission electron microscopy image simulations of thin specimen", Ultramicroscopy 177, 91 (2017). Umicr text
            11. V. Valkovskii, M. K. Shakfa, K. Jandieri, P. Ludewig, K. Volz, W. Stolz, M. Koch, S. D. Baranovskii, "Excitation dependence of the photoluminescence lineshape in Ga(NAsP)/GaP multiple quantum well: Experiment and Monte-Carlo simulation", J. Phys. D: Appl. Phys. 50, 025105 (2017). J. Phys. D text
            12. O. Semeniuk, G. Juska, J. O. Oelerich, M. Wiemer, S.D. Baranovskii, A. Reznik, "Transport of electrons in Lead Oxide studied by CELIV technique", J. Phys. D: Appl. Phys. 50, 035103 (2017). J. Phys. D text
            13. M. Wiemer, K. Jandieri, M. Koch, F. Gebhard, S. D. Baranovskii, "Band edge smearing due to compositional disorder in multi-component d-dimensional alloys", Phys. Stat. Solidi (b) - Rapid Research Letters (RRL), 10, 911 (2016). RRL text
            14. O. Semeniuk, G. Juska, J.-O. Oelerich, M. Wiemer, S.D. Baranovskii, A. Reznik "Charge transport mechanism in lead oxide revealed by CELIV technique", Scientific Reports 6, 33359 (2016). Sci. Rep. text
            15. A. V. Nenashev, M. Wiemer, M. Koch, A. V. Dvurechenskii, F. Gebhard, and S. D. Baranovskii, "Disorder-induced absorption of far-infrared waves by acoustic modes in nematic liquid crystals", J. Appl. Phys. 120, 074901 (2016). JAP text
            16. A. V. Nenashev, M. Wiemer, A. V. Dvurechenskii, F. Gebhard, M. Koch, and S. D. Baranovskii, "Why the apparent order of bimolecular recombination in blend organic solar cells can be larger than two: a topological consideration", Appl. Phys. Lett. 109, 033301 (2016). APL text
            17. A. Beyer, A. Stegmüller, J.- O. Oelerich, K. Jandieri, K. Werner, G. Mette, W. Stolz, S. D. Baranovskii, R. Tonner, and K. Volz "Pyramidal Structure Formation at the Interface between III/V Semiconductors and Silicon", Chem. Mater. 28, 3265 (2016). Chem. Mater. text
            18. O. Bubon, K. Jandieri, S. D. Baranovskii, S. O. Kasap, and A. Reznik "Columnar recombination for X-ray generated electron-holes in amorphous selenium and its significance in a-Se x-ray detectors" , J. Appl. Phys. 119, 124511 (2016). JAP text
            19. R. Woscholski, S. Gies, M. Wiemer, M. K. Shakfa, A. Rahimi-Iman, P. Ludewig, S. Reinhard, K. Jandieri, S. D. Baranovskii, W. Heimbrodt, K. Volz, W. Stolz, and M. Koch "Influence of growth temperature and disorder on spectral and temporal properties of Ga(NAsP) heterostructures", J. Appl. Phys. 119, 145707 (2016). JAP text
            20. M. K. Shakfa, R. Woscholski, S. Gies, T. Wegele, M. Wiemer, P. Ludewig, K. Jandieri, S.D. Baranovskii, W. Stolz, K. Volz, W. Heimbrodt, M. Koch "Carrier dynamics in Ga(NAsP)/Si multi-quantum well heterostructures with varying well thickness", Superlattices and Microstruct. 93, 67 (2016). Super. Micr. text
            21. R. Woscholski, M. K. Shakfa, S. Gies, M. Wiemer, A. Rahimi-Iman, M. Zimprich, S. Reinhard, K. Jandieri, S. D. Baranovskii, W. Heimbrodt, K. Volz, W. Stolz, M. Koch, "Time-resolved photoluminescence of Ga(NAsP) multiple quantum wells grown on Si substrate: effects of rapid thermal annealing", Thin Solid Films 613, 55 (2016). Th.Sol.Films text
            22. M K Shakfa, K Jandieri, M Wiemer, P Ludewig, K Volz, W Stolz, S D Baranovskii and M Koch, "Energy scale of compositional disorder in Ga(AsBi)", J. Phys. D: Appl. Phys. 48, 425101 (2015). J. Phys. D text
            23. K. Jandieri, P. Ludewig, T. Wegele, A. Beyer, B. Kunert, P. Springer, S. D. Baranovskii, S. W. Koch, K. Volz, and W. Stolz, "Compositional dependence of the band gap in Ga(NAsP) quantum well heterostructures", J. Appl. Phys. 118, 065701 (2015). JAP text
            24. A. V. Nenashev, F. Jansson, S. Petznick, M. Wiemer, P.J. Klar, A. V. Dvurechenskii, F. Gebhard, and S. D. Baranovskii, "Scaling description of positive magnetoresistivity in doped dilute magnetic semiconductors", J. Magn. Magn. Mater. 383, 44 (2015). JMMM text
            25. Review Article: A. V. Nenashev, J. O. Oelerich, and S. D. Baranovskii, "Theoretical tools for description of charge transport in disordered organic semiconductors", J. Phys.: Condens Matter 27, 093201 (2015). J. Phys. text
            26. M. K. Shakfa, M. Wiemer, P. Ludewig, K. Jandieri, K. Volz, W. Stolz, S. D. Baranovskii, and M. Koch, "Thermal quenching of photoluminescence in Ga(AsBi)", J. Appl. Phys. 117, 025709 (2015). JAP text
            27. M. K. Shakfa, M. Wiemer, P. Ludewig, K. Jandieri, K. Volz, W. Stolz, S. D. Baranovskii and M. Koch "Two-energy-scale model for description of the thermal quenching of photoluminescence in disordered Ga(As,Bi)" phys. stat. sol. (c) 12, 1187 (2015). pss(c) text
            28. K. Werner, A. Beyer, J. O. Oelerich, S. D. Baranovskii, W. Stolz, K. Voltz, "Structural Characteristics of Gallium Metal Deposited on Si (0,0,1) by MOCVD", J. Cryst. Growth 405, 102 (2014). J. Cryst. Gr. text
            29. F. Jansson, M. Wiemer, A. V. Nenashev, S. Petznick, P.J. Klar, M. Hetterich, F. Gebhard, and S. D. Baranovskii, "Large positive magnetoresistance effects in the dilute magnetic semiconductor (Zn,Mn)Se in the regime of electron hopping", J. Appl. Phys. 116, 083710 (2014). JAP text
            30. M. Wiemer, M. Koch, U. Lemmer, A. B. Pevtsov, S. D. Baranovskii, "Efficiency of exciton dissociation at internal organic interfaces beyond harmonic approximation", Org. Electronics 15, 2461 (2014). Org. Electr. text
            31. A. Hofacker, J. O. Oelerich, A. V. Nenashev, F. Gebhard and S. D. Baranovskii, "Theory to carrier recombination in organic disordered semiconductors", J. Appl. Phys. 115, 223713 (2014). JAP text
            32. J. O. Oelerich, F. Jansson, A. V. Nenashev, F. Gebhard, and S. D. Baranovskii, "Energy position of the transport path in disordered organic semiconductors", J. Phys.: Condens Matter 26, 255801 (2014). J. Phys. text
            33. Review Article: S. D. Baranovskii, "Theoretical description of charge transport in disordered organic semiconductors", Phys. Stat. Sol. B, 251, 487-525 (2014). pss(b) text
            34. A. V. Nenashev, F. Jansson, M. Wiemer, S. Petznick, P. J. Klar, M. Hetterich, A. V. Dvurechenskii, F. Gebhard, and S. D. Baranovskii, "Scaling approach to hopping magnetoresistivity in dilute magnetic semiconductors", Phys. Rev. B 88, 115210 (2013). PRB text
            35. A. V. Nenashev, F. Jansson, J. O. Oelerich, D. Huemmer, A. V. Dvurechenskii, F. Gebhard, and S. D. Baranovskii, "Advanced percolation solution for hopping conductivity", Phys. Rev. B 87, 235204 (2013). PRB text
            36. K. Jandieri, B. Kunert, S. Liebich, M. Zimprich, K. Volz, W. Stolz, F. Gebhard, and S. D. Baranovskii, N. Koukourakis, N. C. Gerhardt, and M. R. Hofmann, "Nonexponential photoluminescence transients in a Ga(NAsP) lattice matched to a (001) silicon substrate", Phys. Rev. B, 87, 035303 (2013). PRB text
            37. C. Karcher, K. Jandieri, B. Kunert, R. Fritz, K. Volz, W. Stolz, F. Gebhard,, S.D. Baranovskii, W. Heimbrodt, "Double-scaled disorder in Ga(N,As,P)/GaP multiquantum wells", J. Lumin. 133, 125 (2013).
            38. J. O. Oelerich, D. Huemmer, and S. D. Baranovskii, "How to Find Out the DOS in Disordered Organic Semiconductors", Phys. Rev. Lett. 108, 226403 (2012). PRL text
            39. K. Jandieri, M. K. Shakfa, S. Liebich, M. Zimprich, B. Kunert, C. Karcher, A. Chernikov, K. Volz, W. Stolz, M. Koch, S. Chatterjee,W. Heimbrodt, F. Gebhard, and S. D. Baranovskii, "Energy scaling of compositional disorder in Ga(N,P,As)/GaP quantum well structures", Phys. Rev. B 86, 125318 (2012). PRB text
            40. Review Article: S. D. Baranovskii, M. Wiemer, A. V. Nenashev, F. Jansson, and F. Gebhard, "Calculating the Efficiency of Exciton Dissociation at the Interface between a Conjugated Polymer and an Electron Acceptor", J. Phys. Chem. Lett. (Perspectives) 3, 1214 (2012). J. Phys. Chem. Lett. text
            41. A. Reznik, K. Jandieri, F. Gebhard, S. D. Baranovskii , "Non-Onsager mechanism of longwave photogeneration in amorphous selenium at high electric fields", Appl.Phys. Lett. 100, 132101 (2012). APL text
            42. A. V. Nenashev, M. Wiemer , F. Jansson, S. D. Baranovskii, "Theory to exciton dissociation at the interface between a conjugated polymer and an electron acceptor", J. Non-Cryst. Solids 358, 2508 (2012). JNCS text
            43. K. Jandieri, S. D. Baranovskii, B. Kunert, M. Zimprich, S. Liebich, K. Volz, W. Stolz, S. Chatterjee, C. Karcher, W. Heimbrodt and F. Gebhard, "Compositional disorder anomalies in Ga(N,P,As)/GaP quantum well structures", J. Phys.: Conference Series 376, 012021 (2012). J. Phys. text /li>
            44. A. V. Nenashev, D. Baranovskii, M. Wiemer, F. Jansson, R. Oesterbacka, A. V. Dvurechenskii, and F. Gebhard, "Theory of exciton dissociation at the interface between a conjugated polymer and an electron acceptor", Phys. Rev. B 84, 035210 (2011). PRB text
            45. M. Wiemer , A. V. Nenashev , F. Jansson, S. D. Baranovskii, "On the efficiency of exciton dissociation at the interface between a conjugated polymer and an electron acceptor", Appl. Phys. Lett. 99, 013302 (2011). APL text
            46. K. Jandieri, C. Jurecka, J. Ohlmann, A. Beyer, B. Kunert, S. D. Baranovskii, K. Volz, W. Stolz, and F. Gebhard, "Hopping relaxation of photoexcited excitons in Ga(NAsP) bulk structure", Phys. Stat. Sol. (c) 8, 163 (2011). pss(c) text
            47. C. Karcher, K. Jandieri, B. Kunert, R. Fritz, M. Zimprich, K. Volz, W. Stolz, F. Gebhard, S. D. Baranovskii, and W. Heimbrodt, "Peculiarities of the photoluminescence of metastable Ga(N,As,P)/GaP quantum well structures", Phys. Rev. B 82, 245309 (2010). PRB text
            48. J. O. Oelerich, D. Huemmer, M. Weseloh, and S. D. Baranovskii, "Concentration dependence of the transport energy level for charge carriers in organic semiconductors", Appl.Phys. Lett. 97, 143302 (2010). APL text
            49. A. V. Nenashev, F. Jansson, S. D. Baranovskii, R. Österbacka, A. V. Dvurechenskii, and F. Gebhard, "Role of Diffusion in Two-dimensional Bimolecular Recombination", Appl.Phys. Lett. 96, 213304 (2010). APL text
            50. A. V. Nenashev, F. Jansson, S. D. Baranovskii, R. Österbacka, A. V. Dvurechenskii, and F. Gebhard, "Effect of electric field on diffusion in disordered materials. I. One-dimensional hopping transport", Phys. Rev. B 81, 115203 (2010). PRB text
            51. A. V. Nenashev, F. Jansson, S. D. Baranovskii, R. Österbacka, A. V. Dvurechenskii, and F. Gebhard, "Effect of electric field on diffusion in disordered materials. II. Two- and three-dimensional hopping transport", Phys. Rev. B 81, 115204 (2010). PRB text
            52. F. Jansson, A.V. Nenashev, S. D. Baranovskii, R. Österbacka, F. Gebhard, "Negative differential conductivity in the hopping transport model", Phys. Stat. Sol. (A) 207, 613 (2010). pss(a) text
            53. O.Rubel and S. D. Baranovskii, "Formation energies of antiphase boundaries in GaAs and GaP: ab initio study", Int. J. Mol. Sci. 10, 5104 (2009). IJMC text
            54. F. Jansson, A.V. Nenashev, S. D. Baranovskii, R. Österbacka, F. Gebhard, "Simulations of hopping transport at high electric fields", Ann. Phys. 18, 856 (2009). Ann. Phys. text
            55. C. Michel, A. Gliesche, S. D. Baranovskii, K. Lips, F. Gebhard and C. Boehme, "Influence of disorder on the spin-dependent transition rates through spin pairs under strong coherent excitation", Phys. Rev. B 79, 052201 (2009). PRB text
            56. K Jandieri, S D Baranovskii, W Stolz, F Gebhard, W Guter, M Hermle, and A W Bett, "Fluctuations of the peak current of tunnel diodes in multi-junction solar cells", J. Phys. D: Appl. Phys. 42, 155101 (2009). J. Phys. D text
            57. K. Jandieri, O. Rubel, S.D. Baranovskii, A.Reznik, J.A.Rowlands and S.O.Kasap, "Lucky-drift model for impact ionization in amorphous semiconductors", J. Mater Sci: Mater Electron. 20, S221 (2009). J. Mater Sci text
            58. A. Reznik, S.D. Baranovskii, M. Klebanov, V. Lyubin, O. Rubel, and J. A. Rowlands, "Reversible vs Irreversible Photodarkening in a-Se: the Kinetics Study", J. Mater Sci: Mater Electron. 20, S111 (2009). J. Mater Sci text
            59. Book Chapter: S.D. Baranovskii, O. Rubel, F. Jansson, R. Österbacka, "Description of Charge Transport in Disordered Organic Materials", in "Advances in Polymer Science", eds. G. Meller, T. Grasser, (Springer, Berlin, Heidelberg, 2010).
            60. O. Rubel, S. D. Baranovskii, W. Stolz, and F. Gebhard, "Exact solution for hopping dissociation of germinate electron-hole pairs in a disordered chain", Phys. Rev. Lett. 100, 196602 (2008). PRL text
            61. Robert E. Tallman, A. Reznik, B. A. Weinstein, S. D. Baranovskii, J.A. Rowlands, "Similarities in the kinetics of photo-crystallization and photo-darkening in a-Se", Appl. Phys. Lett. 93, 212103 (2008). APL text
            62. A.V. Nenashev, F. Jansson, S. D. Baranovskii, R. Österbacka, A.V. Dvurechenskii, and F. Gebhard, "Hopping conduction in strong electric fields: Negative dfferential conductivity", Phys. Rev. B 78, 165207 (2008). PRB text
            63. F. Jansson, S. D. Baranovskii, F. Gebhard, and R. Österbacka, "Effective temperature for hopping transport in a Gaussian DOS", Phys. Rev. B 77, 195211 (2008). PRB text
            64. C. Michel, M. T. Elm, B. Goldlücke, S. D. Baranovskii, P. Thomas, W. Heimbrodt, and P. J. Klar, "Tailoring the magnetoresistance of MnAs/GaAs:Mn granular hybrid nanostructures", Appl. Phys. Lett. 92, 223119 (2008). APL text
            65. A. Gliesche, C. Michel, V. Rajevac, K. Lips, S.D. Baranovskii, F. Gebhard and C. Boehme, "Spin-dependent transition rates through exchange coupled localized spin pairs during coherent spin excitation", Phys. Rev. B 77, 245206 (2008). PRB text
            66. K. Jandieri, S.D. Baranovskii, O. Rubel, W. Stolz, F. Gebhard, W. Guter, M. Hermle, and A.W. Bett, "Resonant tunneling as a dominant transport mechanism in n-GaAs/p-GaAs tunnel diodes", Appl. Phys. Lett. 92, 243504 (2008). APL text
            67. Edited Book: "Transport in Interacting Disordered Systems, 12th International Conference (TIDS12)", edited by Sergei Baranovski (Guest Editor, Wiley-VCH, Berlin, Germany, 2008).
            68. K. Jandieri, S.D. Baranovskii, O. Rubel, W. Stolz, F. Gebhard, W. Guter, M. Hermle, and A.W. Bett "Resonant electron tunneling through defects in tunnel diodes", J. Appl. Phys. 104, 094506 (2008). JAP text
            69. K. Jandieri, S.D. Baranovskii, W. Stolz, and F. Gebhard "Analytical theory for favorable defects in tunnel diodes", J. Appl. Phys. 104, 114511 (2008). JAP text
            70. R. Lukacs, S. D. Baranovskii, P. Thomas, F. Gebhard "To the Kinetics of Photoinduced Volume Changes in Chalcogenide Glasses", J. Appl. Phys. 103, 093541 (2008). JAP text
            71. A. Reznik, S.D. Baranovskii, O. Rubel, K. Jandieri, S.O. Kasap, Y.Ohkawa, M. Kubota, K. Tanioka and J. A. Rowlands "Avalanche multiplication in amorphous selenium and its utilization in imaging", J. Non-Cryst. Solids 354, 2691 (2008). JNCS text
            72. K. Jandieri, O. Rubel, S.D. Baranovskii, A. Reznik, J.A. Rowlands, S.O. Kasap "Scattering and movement asymmetry in the one-dimensional lucky-drift simulation of the avalanche processes in disordered semiconductors", J. Non-Cryst. Solids 354, 2657 (2008). JNCS text
            73. T. Niebling, O. Rubel, W. Heimbrodt, W. Stolz, S. D. Baranovskii, P. J. Klar and J. F. Geisz "Spectral and time dependences of the energy transfer of bound optical excitations in GaP(N)", J. Phys.: Condens. Matter 20, 015217 (2008). J. Phys. text
            74. J. Matulewski, S. D. Baranovskii, and P. Thomas, "On the application of the Edwards-Anderson order parameter to the Coulomb glass", phys. stat. sol. (b) 245, 481 (2008). pss(b) text
            75. C. Michel1, M. T. Elm, S. D. Baranovskii, P. Thomas, W. Heimbrodt, B. Goldlücke, and P. J. Klar, "Influence of non-random incorporation of Mn ions on the magnetotransport properties of Ga1-xMnxAs alloys", phys. stat. sol. (c) 5, 819 (2008). pss(c) text
            76. K. Jandieri, O. Rubel, S. D. Baranovskii, A. Reznik, J. A. Rowlands, and S. O. Kasap, One-dimensional lucky-drift model with scattering and movement asymmetries for impact ionization in amorphous semiconductors", phys. stat. sol. (c) 5, 796 (2008). pss(c) text
            77. A. Reznik, S. D. Baranovskii, O. Rubel, K. Jandieri, and J. A. Rowlands "Photoconductivity in amorphous selenium blocking structures", phys. stat. sol. (c) 5, 790 (2008). pss(c) text
            78. T. Niebling, O. Rubel, W. Heimbrodt, W. Stolz, S. D. Baranovskii, P. J. Klar, and J. F. Geisz, "Hopping energy relaxation of localized excitons in GaP(N)" phys. stat. sol. (c) 5, 768 (2008). pss(c) text
            79. F. Jansson, S. D. Baranovskii, G. Sliauzys, R. Österbacka, and P. Thomas "Effective temperature for hopping transport in a Gaussian DOS" phys. stat. sol. (c) 5, 722 (2008). pss(c) text
            80. J. Matulewski, S. Orlowski, S. D. Baranovskii, and P. Thomas "The influence of the water surrounding on a long-distance electron transport in the DNA", phys. stat. sol. (c) 5, 714 (2008). pss(c) text
            81. J. Matulewski1, S. D. Baranovskii, and P. Thomas "Simulation of the Coulomb gap evolution in the Coulomb glass" phys. stat. sol. (c) 5, 694 (2008). pss(c) text
            82. A. Reznik, S. D. Baranovskii, O. Rubel, G. Juska, S. O. Kasap, Y. Ohkawa, K. Tanioka, J. A. Rowlands "Avalanche multiplication phenomenon in amorphous semiconductors: Amorphous selenium versus hydrogenated amorphous silicon", J. Appl. Phys. 102, 053711 (2007). JAP text
            83. C. Michel, S. D. Baranovskii, P. Thomas, W. Heimbrodt, M. T. Elm, P. J. Klar, B. Goldlücke "Quantitative modeling of the annealing-induced changes of the magnetotransport in Ga1-xMnxAs alloys", J. Appl. Phys. 102, 073712 (2007). JAP text
            84. O. Rubel, W. Stolz, and S. D. Baranovskii "Spectral dependence of the photoluminescence decay in disordered semiconductors", Appl. Phys. Lett. 91, 021903 (2007). APL text
            85. Feature Article: P. Dawson, E. O. Göbel, K. Pierz, O. Rubel, S. D. Baranovskii, and P. Thomas "Relaxation and recombination in InAs quantum dots", phys. stat. sol. (b) 244, 2803 (2007). pss(b) text
            86. O. Rubel, S. D. Baranovskii, K. Hantke, B. Kunert, W.W. Rühle, P. Thomas, K. Volz and W. Stolz "Kinetic effects in recombination of optical excitations in disordered quantum heterostructures", J. Lumin. 127, 285 (2007).
            87. Edited Book: "Charge Transport in Disordered Solids with Applications in Electronics", edited by Sergei Baranovski (John Wiley and Sons, Ltd., Chichester, England, 2006).
            88. Book Chapter: S.D. Baranovskii and O. Rubel, “Description of Charge Transport in Disordered Materials” in "Springer Handbook of Electronic and Photonic Materials", edited by S. Kasap and P. Capper (Springer, 2006), Chap. 9, pp. 161-186.
            89. Book Chapter: S.D. Baranovskii and O. Rubel, “Description of charge transport in amorphous semiconductors” in "Charge Transport in Disordered Solids with Applications in Electronics", edited by S.D. Baranovskii (John Wiley and Sons, Ltd., Chichester, England, 2006), Chap. 2, pp. 49-96.
            90. Book Chapter: S.D. Baranovskii and O. Rubel, “Description of charge transport in disordered organic materials” in "Charge Transport in Disordered Solids with Applications in Electronics", edited by S.D. Baranovskii (John Wiley and Sons, Ltd., Chichester, England, 2006), Chap. 6, pp. 221-266.
            91. V. Rajevac, Ch. Boehme, Ch. Michel, A. Gliesche, K. Lips, S.D. Baranovskii, and P. Thomas "Spin–dependent transition rates of weakly coupled localized spin pairs in semiconductors during coherent magnetic resonant excitation", Phys. Rev. B. 74, 245206 (2006). PRB text
            92. C. Michel, S.D. Baranovskii, P. Klar, S.D. P. Thomas, B. Goldlücke "Strong non-Arrhenius temperature dependence of the resistivity in the regime of traditional band transport ", Appl. Phys. Lett. 89, 112116 (2006). APL text
            93. O. Rubel, B. Kunert, S. D. Baranovskii, F. Grosse, K. Volz and W. Stolz "Modelling of annealing induced short-range order effects in (GaIn)(NP) alloys", Phys. Rev. B 74, 195206 (2006). PRB text
            94. O. Rubel, S. D. Baranovskii, K. Hantke, B. Kuenert, W.W. Rühle, P. Thomas, K. Volz and W. Stolz "On temperature quenching of photoluminescence in disordered semiconductor heterostructures", Phys. Rev. B 73, 233201 (2006). PRB text
            95. S.D. Baranovskii, O. Rubel, P. Thomas, "On the concentration and field dependences of the hopping mobility in disordered organic solids", J. Non-Cryst. Solids, 352, 1644 (2006). JNCS text
            96. A. Reznik, S. D. Baranovskii, V. Lyubin et al., "Kinetics of the photostructural changes in a-Se films", J. Appl. Phys. 100, 113506 (2006). JAP text
            97. O. Rubel, S. D. Baranovskii, K. Hantke, W.W. Rühle, P. Thomas, K. Volz and W. Stolz "Non-radiative recombination of optical excitations in GaIn/NAs quantum wells", phys. stat. sol. (c) 3, 2481 (2006). pss(c) text
            98. O. Rubel, P.Dawson, S. D. Baranovskii, K. Pierz, P. Thomas, and E.O. Göbel "Nature and dynamics of carrier escape from InAs/GaAs quantum dots", phys. stat. sol. (c) 3, 2397 (2006). pss(c) text
            99. K. Volz, O. Rubel, T. Torunski, S. D. Baranovskii, W. Stolz "Nanoanalytical quantification of the nitrogen content in Ga(NAs)/GaAs by using transmission electron microscopy in combination with refined structure factor", Appl. Phys. Lett. 88, 081910 (2006). APL text
            100. J. Matulewski, S.D. Baranovskii, P. Thomas "Phononless hopping conductivity in a Coulomb glass ", phys. stat. sol. (c) 3, 279 (2006). pss(c) text
            101. W. Heimbrodt, P.J. Klar, S. Ye, M. Lampalzer, C. Michel, S.D. Baranovskii, P. Thomas, W. Stolz "Magnetic Interactions in Granular Paramagnetic–Ferromagnetic GaAs: Mn/MnAs Hybrids", J. Supercond. 18 , 315 (2005). J. Supercond. text
            102. O. Rubel, M. Galluppi, S. D. Baranovskii, K. Volz, L. Geelhaar, H. Riechert, P. Thomas, and W. Stolz "Quantitative description of disorder parameters in (GaIn)(NAs) quantum wells from the temperature-dependent photoluminescence spectroscopy", J. Appl. Phys. 98, 063518 (2005). JAP text
            103. P. Dawson, O. Rubel, S. D. Baranovskii, K. Pierz, P. Thomas, and E. O. Göbel, "Temperature Dependent Optical Properties of InAs/GaAs Quantum Dots: Independent Carrier versus Exciton Relaxation ", Phys. Rev. B 72, 235301 (2005).PRB text
            104. S.D. Baranovskii, O. Rubel, P. Thomas, "On description of Coulomb effects caused by doping in amorphous and disordered organic semiconductors ", J. Optoelectronics and Advanced Materials 7, 1929 (2005).
            105. J. Matulewski, S.D. Baranovskii, P. Thomas "Effects of dynamic disorder on the charge transport via DNA molecules ", Phys. Chem. Chem. Phys. 7, 1514 (2005). PCCP text
            106. S.D. Baranovskii, O. Rubel, P. Thomas, "Theoretical description of hopping transport in disordered materials", Thin Solid Films 487, 2 (2005). Th.Sol.Films text
            107. C. Michel, C.H. Thien, S. Ye, P. Klar, W. Heimbrodt, S.D. Baranovskii, P. Thomas, M. Lampalzer, K. Volz, W. Stolz, B. Goldlücke "Spin-dependent localization effects in GaAs:Mn/MnAs granular paramagnetic-ferromagnetic hybrids at low temperatures", Superlattices and Microstructures 37, 321 (2005). Super. Micr. text
            108. P. Bozsoki, S.D. Baranovskii, P. Thomas, T.A. Yovcheva, G.A. Mekishev "Analytical solution of a percolation model for charge decay on surfaces", J. Optoelectronics and Advanced Materials 7, 301 (2005).
            109. O. Rubel, S.D. Baranovskii, K. Hantke, J.D. Heber, J. Koch, P. Thomas, W. Stolz, W.W. Rühle, J.M. Marshall "On the theoretical description of photoluminescence in disordered quantum structures", J. Optoelectronics and Advanced Materials 7, 115 (2005).
            110. O. Rubel, K. Volz, T. Torunski, S.D. Baranovskii, F. Grosse, W. Stolz "Columnar [001]-oriented nitrogen order in Ga(NAs) and (GaIn)(NAs) alloys", Appl. Phys. Lett. 85, 5908 (2004). APL text
            111. S.O. Kasap, J. Rowlands, S.D. Baranovskii, and K. Tanioka "Lucky drift impact ionization in amorphous semiconductors", J. Appl. Phys. 96, 2037 (2004). JAP text
            112. J. Matulewski, S.D. Baranovskii, P. Thomas "Base sequence dependence of charge transport via short DNA bridges ", Phys. Stat. Solidi (b) - Rapid Research Letters (RRL) 241, R46 (2004). RRL text
            113. O. Rubel, S.D. Baranovskii, I.P. Zvyagin, P. Thomas, and S.O. Kasap "Lucky-drift model for avalanche multiplication in amorphous semiconductors", phys. stat. sol. (c) 1, 1186 (2004). pss(c) text
            114. C. Michel, P. Klar, S.D. Baranovskii, P. Thomas " Influence of magnetic-field induced tuning of disorder and band structure on the magnetoresistance of dilute magnetic semiconductors", Phys. Rev. B 69, 165211 (2004). PRB text
            115. B. Dal Don, K. Kohary, E. Tsitsishvili, S.D. Baranovskii, P. Thomas, and H. Kalt "Quantitative interpretation of the phonon-assisted redistribution processes of excitons in Zn(1-x)CdxSe quantum islands", Phys. Rev. B 69, 045318 (2004). PRB text
            116. O. Rubel, S.D. Baranovskii, P. Thomas, and S. Yamasaki "Concentration dependence of the hopping mobility in disordered organic solids ", Phys. Rev. B 69, 014206 (2004). PRB text
            117. H. Grüning, K. Kohary, S.D. Baranovskii, O. Rubel, P.J. Klar, A. Ramakrishnan, G. Ebbinghaus, P. Thomas, W. Heimbrodt, W. Stolz and W. Rühle "Hopping relaxation of excitons in GaInNAs/GaNAs quantum wells ", phys. stat. sol. (c) 1, 109 (2004). pss(c) text
            118. O. Rubel, S.D. Baranovskii, P. Thomas, and S. Yamasaki "Concentration dependence of the hopping mobility in disordered organic solids ", phys. stat. sol. (c) 1, 168 (2004). pss(c) text
            119. P. Bozsoki, S.D. Baranovskii, P. Thomas, and S.C. Agarwal "Potential fluctuations in disordered semiconductors measured by transport and optical methods ", phys. stat. sol. (c) 1, 113 (2004). pss(c) text
            120. K. Kohary, H. Cordes, S.D. Baranovskii, P. Thomas, and J.-H. Wendorff "Hopping transport in 1D chains (DNA vs. DLC)", phys. stat. sol. (b) 241, 76 (2004). pss(b) text
            121. B. Dal Don, K. Kohary, E. Tsitsishvili, R. Eichmann, S.D. Baranovskii, P. Thomas, and H. Kalt "Temperature Dependent Excitonic Relaxation in CdSe/ZnSe Quantum Islands: Experiment and Computer Simulation", physica status solidi (c) 0, 1509 (2003). pss(c) text
            122. S.D. Baranovskii, K. Kohary, P. Thomas and S. Yamasaki "On the Light Absorption in Amorphous Semiconductors", J. Mater. Science: Materials in Electronics 14, 707 (2003). J. Mat. Scie. text
            123. S.D. Baranovskii, K. Kohary, P. Thomas and S. Yamasaki "On the Light Absorption in Amorphous Semiconductors" Physics and Applications of Disordered Materials, ed. M. Popescu, INOE, 2002.
            124. S.D. Baranovskii, I.P. Zvyagin, H. Cordes, S. Yamasaki and P. Thomas "Percolation Approach to Hopping Transport in Organic Disordered Solids" phys. stat. sol. (b) 230, 281 (2002). pss(b) text
            125. H. Cordes, S.D. Baranovskii, J. Greif "Percolation Approach to Correlated Hopping Transport in a Random Energy Landscape" phys. stat. sol. (b) 230, 243 (2002). pss(b) text
            126. I.P. Zvyagin, M.A. Ormont, S.D. Baranovskii, P. Thomas "Effect of Coulomb Interaction on the Density of States in Intentionally Disordered Superlattices" physica status solidi (b) 230, 193 (2002). pss(b) text
            127. S.D. Baranovskii, I.P. Zvyagin, H. Cordes, S. Yamasaki and P. Thomas "Electronic Transport in Disordered Organic and Inorganic semiconductors" J. Non-Cryst. Solids 299-302, 416 (2002).JNCS text
            128. I.P. Zvyagin, S.D. Baranovskii, K. Kohary, H. Cordes and P. Thomas "Hopping in Quasi-One-Dimensional Disordered Solids: Beyond the Nearest-Neighbor Approximation" phys. stat. sol. (b) 230, 227 (2002). pss(b) text
            129. S.D. Baranovskii, H. Cordes, K. Kohary, and P. Thomas "On the Disorder-Enhanced Diffusion in Aromatic Melts" Philos. Mag. B 81, 955 (2001). via TIB
            130. S.A. Tarasenko, A.A. Kiselev, E.L. Ivchenko, A. Dinger, M. Baldauf, C. Klingshirn, H. Kalt, S.D. Baranovskii, R. Eichmann, and P. Thomas "Energy Relaxation of Localized Excitons at Finite Temperatures" Semicond. Sci. Technol. 16, 486 (2001). Sem. Sci. Tech. text
            131. S.D. Baranovskii, H. Cordes, F. Hensel and S. Yamasaki "Description of Charge Carrier Transport in Disordered Organic Solids" in: "Materials for Information Technology in the New Millennium", eds. J.M. Marshall, A.G. Petrov, A. Vavrek, D. Nesheva, D. Dimova-Malinovska, J.M. Maud (Bookcraft, Bath 2001) p.206.
            132. K. Kohary, S.D. Baranovskii, H. Cordes, P. Thomas, F. Hensel, S. Yamasaki and J.-H. Wendorff "One-Dimensional Hopping Transport in Disordered Organic Solids. II. Computer Simulations" Phys. Rev. B. 63, 094202-1 (2001). PRB text
            133. H. Cordes, S.D. Baranovskii, K. Kohary, P. Thomas, F. Hensel, S. Yamasaki and J.-H. Wendorff "One-Dimensional Hopping Transport in Disordered Organic Solids. I. Analytic Calculations" Phys. Rev. B. 63, 094201-1 (2001). PRB text
            134. S.D. Baranovskii, H. Cordes, F. Hensel and S. Yamasaki "On the Description of Charge Carrier Transport in Disordered Organic Solids" Synthetic Metals 119, 57 (2001). Synt. Met. text
            135. H. Uchtmann, S.Yu. Kazitsyna, S.D. Baranovskii, and F. Hensel "Light-Induced Nucleation and Optical Absorption in Cesium Vapor" J. Chem. Phys. 113, 4171 (2000). J. Chem. Phys. text
            136. S.D. Baranovskii, H. Cordes, S. Yamasaki and G. Weiser "On the Carrier Mean Free Path in GaxIn1-xAs Mixed Crystals" phys. stat. sol. (b) 218, R7 (2000). pss(b) text
            137. S.D. Baranovskii, H. Cordes, F. Hensel and G. Leising "On the Description of Charge Carrier Transport in Disordered Organic Solids" Phys. Rev. B. 62, 7934 (2000). PRB text
            138. V.I. Kozub, S.D. Baranovskii, I. Shlimak "Fluctuation-Stimulated Variable-Range Hopping" Solid State Commun. 113, 587 (2000). Sol. State. Commun. text
            139. H. Cordes and S.D. Baranovskii "On the Conduction Mechanism in Ionic Glasses" phys. stat. sol. (b) 218,133 (2000). pss(b) text
            140. S.D. Baranovskii and T. Faber "Transport Energy for Förster Prosesses" phys. stat. sol. (b) 218, 59 (2000). pss(b) text
            141. S.D. Baranovskii and H. Cordes "On the Transport Mechanism in Ionic Glasses" J. Chem. Phys. 111, 7546 (1999). J. Chem. Phys. text
            142. I. Shlimak, K.-J. Friedland, and S.D. Baranovskii "Hopping Conductivity in Gated GaAs: Universality of Prefactor" Solid State Commun. 112, 21 (1999). Sol. State. Commun. text
            143. S.D. Baranovskii and I. Shlimak "Novel Transport Mechanism for Interacting Electrons in Disordered Systems: Variable-Range Resonant Tunneling" preprint cond.mat/9810363. Cond.Mat. text
            144. S.D. Baranovskii, Comment on "Absence of Carrier Hopping in Porous Silicon" Phys. Rev. Lett. 81, 3804 (1998). PRL text
            145. S.D. Baranovskii, R. Eichmann, P. Thomas "Temperature-dependent Exciton Luminescence in Quantum Wells: Computer Simulation" Proceedings of the 24th International Conference on the Physics of Semiconductors August`98, Jerusalem, Israel (World Scientific, Singapore, 1998), p.57.
            146. S.D. Baranovskii, R. Eichmann, P. Thomas "Temperature-dependent Exciton Luminescence in Quantum Wells: Computer Simulation" Phys. Rev. B 58, 13081 (1998). PRB text
            147. S.D. Baranovskii, V.K. Tikhomirov, G.J. Adriaenssens "Evidence for a Temperature Dependence of the Intrinsic Dipoles in Chalcogenide Glasses" Philos. Mag. Lett. 77, 295 (1998). text via TIB
            148. S.D. Baranovskii, R. Eichmann, P. Thomas "Temperature-Dependent Exciton Luminescence in Coupled Quantum Wells" phys. stat. sol. (b) 205, R19 (1998). pss(b) text
            149. J.-H. Zhou, S.D. Baranovskii, S. Yamasaki, K. Ikuta, K. Tanaka, M. Kondo, A. Matsuda "On the Transport Properties of Microcrystalline Silicon at Low Temperatures" Semiconductors 32, 807 (1998). Semicond. text
            150. S.D. Baranovskii, T. Faber, F. Hensel, P. Thomas "On the Einstein Relation for Hopping Electrons" J. Non-Cryst. Solids 227-230, 158 (1998). JNCS text
            151. M. Zhu, S.D. Baranovskii, T. Faber, F. Hensel, P. Thomas "Thermally Stimulated Conductivity in Disordered Semiconductors in the Hopping Regime" J. Non-Cryst. Solids 227-230, 162 (1998). JNCS text
            152. J.-H. Zhou, S.D. Baranovskii, S. Yamasaki, K. Ikuta, K. Tanaka, M. Kondo, A. Matsuda "On the Transport Properties of Microcrystalline Silicon at Low Temperatures" phys. stat. sol. (b) 205, 147 (1998). pss(b) text
            153. S.D. Baranovskii, M. Zhu, T. Faber, F. Hensel, P. Thomas, G.J. Adriaenssens "Thermally Stimulated Conductivity in Disordered Semiconductors at Low Temperatures" phys. stat. sol. (b) 205, 91 (1998). pss(b) text
            154. S.D. Baranovskii, T. Faber, F. Hensel, P. Thomas "On the Einstein Relation for Hopping Electrons" phys. stat. sol. (b) 205, 87 (1998). pss(b) text
            155. H. Uchtmann, R. Dettmer, S.D. Baranovskii, F. Hensel "Photoinduced Nucleation in Supersaturated Mercury Vapor" J. Chem. Phys. 108, 9775 (1998). J. Chem. Phys. text
            156. J.E. Golub, S.D. Baranovskii, P. Thomas "Role of Interactions in the Energy-Loss Hopping and Recombination of Two-Dimensional Electrons and Holes" Phys. Rev. B 55, 4575 (1997). PRB text
            157. S.D. Baranovskii, T. Faber, F. Hensel, M. Zhu "Einstein Relation for Hopping Electrons" in "Future Directions in Thin Film Science and Technology", eds. J.M.Marshall, N.Kirov, A.Vavrek, J.M.Maud (World Scientific, Singapore, 1997) p.32.
            158. J. Golub, S.D. Baranovskii, P. Thomas "Evidence for Dipole-Dipole Hopping of GaAs Quantum Well Excitons" Phys. Rev. Lett. 78, 4261 (1997). PRL text
            159. S.D. Baranovskii, M. Zhu, F. Hensel, P. Thomas, M.B. von der Linden, W.F. van der Weg "Thermally Stimulated Conductivity in Disordered Semiconductors at Low Temperatures" Phys. Rev. B 55, 16226 (1997). PRB text
            160. S.D. Baranovskii, T. Faber, F. Hensel, P. Thomas "On the Applicability of the Transport-Energy Concept to Various Disordered Materials" J. Phys.: Cond. Matter 9, 2699 (1997). J. Phys. text
            161. S.D. Baranovskii, F. Hensel, J.E. Golub, P. Thomas "Long-Time Asymptotics in the Diffusion-Controlled A + B -> Reaction with Hopping Energy Relaxation" J. Chem. Phys. 106, 3157 (1997). J. Chem. Phys. text
            162. G.J. Adriaenssens, S.D. Baranovskii, W. Fuhs, J. Jansen, Ö. Öktü "Light-Intensity Dependence of Excess Carrier Lifetimes" J. Non-Cryst. Solids 198-200, 271 (1996). JNCS text
            163. S.D. Baranovskii, T. Faber, F. Hensel, P. Thomas "On the Description of Hopping Energy Relaxation and Transport in Disordered Systems" J. Non-Cryst. Solids 198-200, 222 (1996). JNCS text
            164. S.D. Baranovskii, T. Faber, F. Hensel, P. Thomas, G.J. Adriaenssens "Einstein Relationship for Hopping Electrons" J. Non-Cryst. Solids 198-200, 214 (1996). JNCS text
            165. S.D. Baranovskii and P. Thomas "Nonlinear Hopping Transport in Band Tails" J. Non-Cryst. Solids 198-200, 140 (1996). JNCS text
            166. S.D. Baranovskii, H. Fritzsche, E.I. Levin, I.M. Ruzin, B.I. Shklovskii "Theory of Low-Temperature Photoluminescence and Photoconductivity in Amorphous Semiconductors" "Best of Soviet Semiconductor Physics and Technology" ed. by M.Levinstein and M. Shur (World Scientific, Singapore, 1995) p.71.
            167. S.D. Baranovskii, B.L. Gelmont, V.G. Golubev, V.I. Ivanov-Omskii, A.V. Osutin "Spectroscopic Determination of the Compensation Degree and of the Impurity Concentration in High-Purity GaAs" "Best of Soviet Semiconductor Physics and Technology" ed. by M.Levinstein and M. Shur (World Scientific, Singapore, 1995) p.439.
            168. I Shlimak, M. Kaveh, R. Ussyshkin, V. Ginodman, S.D. Baranovskii, H. Vaupel, P. Thomas, R.W. van der Heijden "Temperature-Induced Smearing of the Coulomb Gap by Hopping Electrons" Phys. Rev. Lett. 75, 4764 (1995). PRL text
            169. G.F. Hohl, S.D. Baranovskii, J.A. Becker, F. Hensel, S.A. Quaiser, M.T. Reetz "Tunneling Conduction in Co-cluster/tetraoctylammonium bromide/ poly (phenyl -p - phenylenvinylene) Nanocomposites" J. Appl. Phys. 78, 7130 (1995). JAP text
            170. S.D. Baranovskii, R. Dettmer, F. Hensel, H. Uchtmann "On the Time Decay of the Photoinduced Condensation in Supersaturated Vapors" J. Chem. Phys. 103, 7796 (1995). J. Chem. Phys. text
            171. B. Cleve, B. Hartenstein, S.D. Baranovskii, M. Scheidler, P. Thomas, H. Baessler "High-Field Hopping Transport in Band Tails of Disordered Semiconductors" Phys. Rev. B 51, 16705 (1995). PRB text
            172. G.J. Adriaenssens, S.D. Baranovskii, W. Fuhs, J. Jansen, Ö. Öktü "Photoconductivity Response Time in Amorphous Semiconductors" Phys. Rev. B 51, 9661 (1995). PRB text
            173. S.D. Baranovskii, P. Thomas, G.J. Adriaenssens "The Concept of Transport Energy and ist Application to Steady-State Photoconductivity in Amorphous Silicon" J. Non-Cryst. Solids 190, 283 (1995). JNCS text
            174. S.D. Baranovskii, F. Hensel, K. Ruckes, P. Thomas, G.J. Adriaenssens "On the Potential Fluctuations in Amorphous Silicon" J. Non-Cryst. Solids 190, 117 (1995). JNCS text
            175. S.Yu. Verbin, S.D. Baranovskii, R. Hellmann, K. Ruckes, S.R. Grigorev, B.V. Novikov, E.O. Goebel, P. Thomas "New Luminescence Band in II-VI Semiconductor Crystals with Treated Surfaces" Mater. Sc. Forum 182-184, 279 (1995). MSF text
            176. S.D. Baranovskii, G.J. Adriaenssens, P. Thomas "The Concept of Transport Energy and the Steady State Photoconductivity in Amorphous Silicon" Proceedings of 8th Int. School on Cond. Matter Physics (invited lecture), Varna`94, Bulgaria, ed. J. Marshall (Research Studies Press, U.K., 1995) p.35.
            177. S.D. Baranovskii, U. Doerr, P. Thomas, A. Naumov, W. Gebhardt "Exciton Line Broadening by Compositional Disorder in ZnSexTe1-x Quantum Wells" Solid State Commun. 89, 5 (1994). Sol. State. Commun. text
            178. A. Reznitsky, S.D. Baranovskii, A. Tsekun, C. Klingshirn "Recombination of Alloy-Trapped Excitons in Ternary Solid Solutions with Common Cation Components" phys. stat. sol. (b) 184, 159 (1994). pss(b) text
            179. S.D. Baranovskii, P. Thomas, G.J. Adriaenssens, Ö. Öktü "Photoconductivity of Doped Amorphous Semiconductors at Low Temperatures" Molecular Crystals and Liquid Crystals 252, 23 (1994). MCLC text
            180. S.D. Baranovskii, B. Cleve, R. Hess, P. Thomas "Effective Temperature for Electrons in Band Tails" J. Non-Cryst. Solids 164-166, 437 (1993). JNCS text
            181. P. Thomas and S.D. Baranovskii "Equilibrium and Non-Equilibrium Transport in band Tails" J. Non-Cryst. Solids 164-166, 431 (1993). JNCS text
            182. S.D. Baranovskii, U. Doerr, P. Thomas, A. Naumov, W. Gebhardt "Exciton Line Broadening by Compositional Disorder in Alloy Quantum Wells" Phys. Rev. B 48, 17149 (1993). PRB text
            183. Ö. Öktü, H. Tolunay, G.J. Adriaenssens, W. Lauwerens, S.D. Baranovskii "Electron Drift Mobility in a-Si1-xCx:H with Low Carbon Content" Philos. Mag. Lett. 68, 173 (1993). text via TIB
            184. S.D. Baranovskii, P. Thomas, G.J. Adriaenssens, Ö. Öktü "Low-Temperature Photoconductivity of Doped Amorphous Semiconductors" Solid State Commun. 86, 549 (1993). Sol. State. Commun. text
            185. H. Kalt, J.H. Collet, Le Si Dang, J. Cibert, S.D. Baranovskii, R. Saleh, M. Umlauff, K.P. Geyzers, M. Heuken, C. Klingshirn "Dynamics of Localized Excitons and High-Excitation Effects in II-VI Quantum Wells and Heterostructures" Physica B 191, 90 (1993). Phys. B text
            186. S.D. Baranovskii, P. Thomas, H. Vaupel "Electron Glass Transition in a Lightly Doped Semiconductor" Proceedings of the Int. Conf. "Condensed Matter Physics and Applications", Bahrain, 1992, p.171.
            187. S.D. Baranovskii and P. Thomas Comment on "Phase Transition of an Exciton System in GaAs Coupled Quantum Wells" and "Fermi-Dirac Distribution of Excitons in Coupled Quantum Wells" Phys. Rev. Lett. 69, 993 (1992). PRL text
            188. U. Siegner, D. Weber, E.O. Goebel, D. Benhardt, V. Heukeroth, S.D. Baranovskii, R. Saleh, P. Thomas, H. Schwab, C. Klingshirn, V.G. Lysenko, J.M. Hvam "Optical Dephasing in Semiconductor Mixed Crystals" Phys. Rev. B 46, 4564 (1992). PRB text
            189. S.D. Baranovskii, P. Thomas, H. Vaupel "Electron Glass Transition in a Lightly Doped Semiconductor" Philos. Mag. B 65, 685 (1992). text via TIB
            190. S.D. Baranovskii, P. Thomas, H. Vaupel "Temperature Dependence of the Linewidth of Shallow Impurity Spectral Lines in Lightly Doped Weakly Compensated Semiconductors" J. Appl. Phys. 71, 2452 (1992). JAP text
            191. H. Kalt, J. Collet, S.D. Baranovskii, R. Saleh, P. Thomas, Le Si Dang, J. Cibert "Optical- and Acoustic - Phonon Assisted Hopping of Localized Excitons in CdTe/ZnTe Quantum Wells" Phys. Rev. B 45, 4253 (1992). PRB text
            192. S.D. Baranovskii, R. Saleh, P. Thomas, H. Vaupel, H. Fritzsche "Influence of Non-radiative and Non-geminate Processes on a Lifetime of Photoexcited Carriers in Amorphous Semiconductors at Low Temperatures" J. Non-Cryst. Solids 137-138, 567 (1991). JNCS text
            193. Book Chapter: B.I. Shklovskii, E.I. Levin, H. Fritzsche, S.D. Baranovskii "Hopping Photoconductivity in Amorphous Semiconductors: Dependence on Temperature, Electric Field and Frequency" "Advances in Disordered Semiconductors, Vol.3 (Transport, Correlation and Structural Defects)" ed. H. Fritzsche (World Scientific, Singapore, 1991), pp.161-191.
            194. S.D. Baranovskii "Theoretical Basis for Qantitative Characterization of Impurities in n-Type III-V Semiconductors by Photoelectromagnetic Spectroscopy" Appl. Surface Science 50, 218 (1990). Appl. Surf. Sci. text or via HeBIS
            195. S.D. Baranovskii and M. Silver "The Effect of Long-Range Coulomb Potential on the Electronic Structure of Localized States in Homogeneous Intrinsic Amorphous Semiconductors" Philos. Mag. Lett. 61, 77 (1990). text via TIB
            196. A.G. Abdukadirov, S.D. Baranovskii, S.Yu. Verbin, E.L. Ivchenko, A.Yu. Naumov, A.N. Reznitsky "Photoluminescence and Tunneling Relaxation of Localized Excitons in A2B6 Anion Solid Solutions" Sov. Phys. JETP 71, 1155 (1990). JETP text
            197. M.E. Raikh, S.D. Baranovskii, B.I. Shklovskii "Dimensional Quantization in a-Si:H Quantum Well Structures: the Alloy Model" Phys. Rev. B 41, 7701 (1990). PRB text
            198. A.G. Abdukadirov, S.D. Baranovskii, E.L. Ivchenko "Low-Temperature Photoluminescence and Photoconductivity in Undoped Amorphous Semiconductors" Sov. Phys. Semicond. 24, 82 (1990). FTP text
            199. S.D. Baranovskii, H. Fritzsche, E.I. Levin, I.M. Ruzin, B.I. Shklovskii "Computer Simulation of Carrier Energy Relaxation and Recombination in Disordered Systems with Localized Electrons" Proceedings of the 2nd Int. Conf. "Computational Physics", Amsterdam, Netherlands, 1990, p.30.
            200. S.D. Baranovskii, B.L. Gelmont, V.G. Golubev, V.I. Ivanov-Omskii, A.V. Osutin "Spectroscopic Determination of the Compensation Degree and of the Impurity Concentration in High-Purity GaAs" Sov. Phys. Semicond. 23, 891 (1989). FTP text
            201. S.D. Baranovskii "Temperature Dependence of the Spectral Line Shape for Photothermal Ionization of Impurities" Proceedings of 14th Sov. Conf. "Theory of Semiconductors", Donetsk, 1989, p.73.
            202. S.D. Baranovskii, B.L. Gelmont, V.G. Golubev, V.I. Ivanov-Omskii, A.V. Osutin "Line Shape Dependence on Temperature for Photothermal Ionization of Donors in GaAs" Inst. Phys. Conf. Ser. 95, 271 (1989) (Proceedings of the 3d Int. Conf. "Shallow Impurities in Semiconductors", Linköping, Sweden, 1989).
            203. A.G. Abdukadirov, S.D. Baranovskii, E.L. Ivchenko "Photoluminescence and Tunneling Relaxation of Carriers in Amorphous Semiconductors" Proceedings of the Int. Conf. "Non-Crystalline Semiconductors-89", Uzhgorod, USSR, 1989, p.19.
            204. S.D. Baranovskii, H. Fritzsche, E.I. Levin, I.M. Ruzin, B.I. Shklovskii "Electronic Transport and Recombination in Amorphous Semiconductors at Low Temperatures" Proceedings of the Int. Conf. "Non-Crystalline Semiconductors-89", Uzhgorod, USSR, 1989, p.4.
            205. A.G. Abdukadirov, S.D. Baranovskii, E.L. Ivchenko "Tunneling Relaxation of Carriers in Amorphous Semiconductors in the Distant-Pair Regime" Proceedings of the Sov. Conf. "Amorphous Semiconductors and Insulators of the Basis of Si in Electronics", Odessa, 1989, p.10.
            206. B.I. Shklovskii, H. Fritzsche, S.D. Baranovskii "Recombination and Photoconductivity in Amorphous Semiconductors at Low Temperatures" J. Non-Cryst. Solids 114, 325 (1989). JNCS text
            207. B.I. Shklovskii, H. Fritzsche, S.D. Baranovskii "Electronic Transport and Recombination in Amorphous Semiconductors at Low Temperatures" Phys. Rev. Lett. 62, 2989 (1989). PRL text
            208. S.D. Baranovskii, H. Fritzsche, E.I. Levin, I.M. Ruzin, B.I. Shklovskii "Theory of Photoconductivity and Photoluminescence in Amorphous Semiconductors at Low Temperatures" Sov. Phys. JETP 69, 773 (1989). JETP text
            209. S.D. Baranovskii and B.I. Shklovskii "Temperature Dependence of the Line Profile of Photothermal Ionization of Impurities in a Lightly Doped Weakly Compensated Semiconductor" Sov. Phys. Semicond. 23, 122 (1989). FTP text
            210. E.A. deAndrada e Silva, I.C. da Cunha Lima, S.D. Baranovskii "Density of States of Lightly Doped Ga1-xAlxAs/GaAs Quantum Wells via Monte-Carlo Simulation" Proceedings of 19th Int. Conf. "Physics of Semiconductors", Warsaw, Poland 1988, p.285.
            211. S.D. Baranovskii and B.I. Shklovskii "Two Models of Tunnel Radiative Recombination in Disordered Semiconductors" Sov. Phys. Semicond. 23, 88 (1989). FTP text
            212. S.D. Baranovskii, B.L. Gelmont, E.A. de Andrada e Silva, I.C. da Cunha Lima "Quadrupole Line-Broadening for Hydrogen-Like Impurities in Lightly Doped Compensated Semiconductors" Sov. Phys. Semicond. 22, 1002 (1988). FTP text
            213. S.D. Baranovskii, V.G. Karpov, B.I. Shklovskii "Non-Radiative Recombination in Non-Crystalline Semiconductors" Sov. Phys. JETP 67, 588 (1988). JETP text
            214. S.D. Baranovskii and V.G. Karpov "Frequency Dependence of the Capacitance of Metall-Insulator Semiconductor Structures on the Basis of Non-Crystalline Semiconductors" Sov. Phys. Semicond. 21, 1280 (1987).
            215. S.D. Baranovskii, B.L. Gelmont, V.G. Golubev, V.I. Ivanov-Omskii, A.V. Osutin "Temperature Dependence of the Lineshape of 1s->2p Photothermal Ionization of Donors in GaAs" Sov. Phys. JETP Lett. 46, 510 (1987). JETP Lett text
            216. S.D. Baranovskii, V.G. Karpov, B.I. Shklovskii "Theory of Non-Radiative Recombination in Amorphous Semiconductors" J. Non-Cryst. Solids 97-98, 487 (1987). JNCS text
            217. S.D. Baranovskii, E.L. Ivchenko, B.I. Shklovskii "A Novel Tunneling Recombination Regime for Photoexcited Carriers in Amorphous Semiconductors" Sov. Phys. JETP 65, 1260 (1987). JETP text
            218. Review Article: S.D. Baranovskii and V.G. Karpov "Localized Electron States in Semiconductor Glasses" Sov. Phys. Semicond. 21, 1 (1987).
            219. S.D. Baranovskii, B.L. Gelmont, K.D. Tsendin "Impurity Conduction in Chalcogenide Semiconductor Glasses" J. Non-Cryst. Solids 90, 417 (1987). JNCS text
            220. S.D. Baranovskii and V.G. Karpov "Two-Channel Electron Transport in Semiconductor Glasses" Sov. Phys. Semicond. 21, 189 (1987).
            221. S.D. Baranovskii and V.G. Karpov "Multyphonon Hopping Conductivity" Sov. Phys. Semicond. 20, 1137 (1986).
            222. S.D. Baranovskii, B.L. Gelmont, K.D. Tsendin "Compensation Level in Modified Semiconductor Glasses" Sov. Phys. Semicond. 20, 1202 (1986).
            223. S.D. Baranovskii and V.G. Karpov "Kinetics of Photoluminescence Decay in Semiconductor Glasses" Sov. Phys. Semicond. 20, 192 (1986).
            224. S.D. Baranovskii and V.G. Karpov "Multyphonon Transitions in the Vicinity of the Mobility Edge in Chalcogenide Glasses" Proceedings of the Sov. Conf. "Vitreous Semiconductors", Leningrad, 1985, p.20.
            225. S.D. Baranovskii "Capture Probability and Dispersive Transport in Non-Crystalline Semiconductors" Proceedings of 12th Sov. Conf. "Theory of Semiconductors", Tashkent, 1985, p.78.
            226. S.D. Baranovskii and E.A. Lebedev "Localized States Limiting Drift Mobility in Amorphous Se Containing S, Te and As" Sov. Phys. Semicond. 19, 635 (1985).
            227. S.D. Baranovskii and V.G. Karpov "Probability of Capture and Dispersive Transport in Non-Crystalline Semiconductors" Sov. Phys. Semicond. 19, 336 (1985).
            228. M. Babacheva, S.D. Baranovskii, V.M. Lyubin, M.A. Tagirdzhanov, V.A. Fedorov "Influence of Photostructural Transformations in As2S3 Films on the Urbach Absorption Edge" Sov. Izv. Vuz. 7, 12 (1985).
            229. S.D. Baranovskii and V.G. Karpov "Mechanism of Thermal Quenching of the Photoluminescence in Chalcogenide Glasses" Proceedings of International Conf. "Amorphous Semiconductors-84", Gabrovo, Bulgaria, p. 138.
            230. S.D. Baranovskii, G.A. Bordovskii, L.P. Kazakova, E.A. Lebedev, V.M. Lyubin, N.A. Savinova "Ambipolar Photoconductivity in Glasses Ge-Pb-S" Sov. Phys. Semicond. 18, 633 (1984).
            231. M. Babacheva, S.D. Baranovskii, V.M. Lyubin, M.A. Tagirdzhanov, V.A. Fedorov "Influence of Photostructural Transformations in As2S3 Films on the Urbach Absorption Edge" Sov. Phys. Solid State 26, 1331 (1984).
            232. S.D. Baranovskii and V.G. Karpov "Thermal Quenching of the Photoluminescence in Chalcogenide Glasses" Sov. Phys. Semicond. 18, 828 (1984).
            233. S.D. Baranovskii, B.I. Shklovskii, A.L. Efros "Screening in a System with Localized Electrons" Sov. Phys. JETP 60, 1031 (1984).JETP text
            234. S.D. Baranovskii, A.A. Uzakov, A.L. Efros "Thermodynamic Properties of Impurity Band Electrons" Proceedings of 11th Sov. Conf. "Theory of Semiconductors", Uzhgorod, 1983, p.45.
            235. S.D. Baranovskii, A.A. Uzakov, A.L. Efros "Thermodynamic Properties of Impurity Band Electrons" Sov. Phys. JETP 56, 422 (1982).JETP text
            236. S.D. Baranovskii and A.A. Uzakov "Interimpurity Absorption of Infrared Radiation in Lightly Doped Semiconductors" Sov. Phys. Semicond. 16, 1026 (1982).
            237. S.D. Baranovskii and A.A. Uzakov "On the Theory of High-Frequency Hopping Conductivity in Lightly Doped Semiconductors" Sov. Phys. Semicond. 15, 931 (1981).
            238. S.D. Baranovskii, A.A. Uzakov, B.I. Shklovskii, A.L. Efros "Structure of Impurity Band in Lightly Doped Semiconductors" Proceedings of 2d Sov. Conf. "Deep Levels in Semiconductors", Tashkent, 1980, p.55.
            239. S.D. Baranovskii, Nguen van Lien, B.I. Shklovskii, A.L. Efros "Structure of the Impurity Band in Lightly Doped Semiconductors" Proceedings of 10th Sov. Conf. "Theory of Semiconductors", Novosibirsk, 1980, p.48.
            240. S.D. Baranovskii and A.L. Efros "Spectrum of Dipole Excitations in Disordered Systems with Localized Electrons" Sov. Phys. Semicond. 14, 1323 (1980).
            241. S.D. Baranovskii, A.L. Efros, B.I. Shklovskii "Elementary Excitations in Disordered Systems with Localized Electrons" Sov. Phys. JETP 51, 199 (1980).JETP text
            242. S.D. Baranovskii and A.A. Uzakov "On the High-Frequency Impurity Hopping Conductivity" Solid State Commun. 36, 829 (1980). Sol. State. Commun. text
            243. S.D. Baranovskii, A.L. Efros, B.L. Gelmont, B.I. Shklovskii "Coulomb Gap in Disordered Systems: Computer Simulation" J. Phys. C: Solid State Phys. 12, 1023 (1979). J. Phys. C text
            244. S.D. Baranovskii, A.L. Efros, B.L. Gelmont, B.I. Shklovskii "Coulomb Gap in Disordered Systems: Computer Simulation" Proceedings of 9th Sov. Conf. "Theory of Semiconductors", Tbilisy, 1978, p.37.
            245. S.D. Baranovskii, A.L. Efros, B.L. Gelmont, B.I. Shklovskii "Coulomb Gap in Disordered Systems" Solid State Commun. 27, 1 (1978). Sol. State. Commun. text
            246. S.D. Baranovskii and A.L. Efros "Band Edge Smearing in Solid Solutions" Sov. Phys. Semicond. 12, 1328 (1978).