Main Content

Core facility Semiconductor Epitaxy

Epitaxie im STRL
Foto: HA Hessen Agentur GmbH – Jan Michael Hosan
Ein Mitarbeiter arbeitet am MOVPE Reaktor

The terms of use for the semiconductor epitaxy as well as the hints for the user costs are listed under the following links:

Terms of use (PDF) (German)

Hinweise zu Gerätenutzungskosten und zu Gerätezentren (PDF)

Reactors for metal-organic vapor phase epitaxy (MOCVD) and atomic layer deposition (ALD)

Device Special characteristics Location  person
(Details S.b.)
2 x 300mm Crius Cluster
(Aixtron AG)
III/V and SiGeC Epitaxie:
Wafer size: up to 12" (300 mm), CVD machine: Si/Ge/C-epitaxy, MOVPE machine: III/V-epitaxy, Brooks wafer handler for loading and transfer of substrates, Epi Curve TT (LayTec) 
LB, mar.quest SR, KV
JEOL JEM-Z200FSC
(CRYO ARM™ 200)
Two AIX 200 machines linked by Nitrogen filled glove-box:
Equipped with EpiRAS (Laytec), Equipped with mass spectrometer (Zeiss), Materials: SiGeC, III/V and 2D (e.g. post-transition metal     chalcogenides) 
LB, mar.quest SR, KV
OXTRON Home-built (MOVPE/CVD) machine:
2 hot sources for low-vapor pressure sources 
LB, mar.quest SR, KV

Characterization of semiconductors

Device Special characteristics Location person
(Details S.B.)
Atomic force microscopy (AFM) LB, mar.quest
X-ray diffraction (XRD) LB, mar.quest
Photoluminescence (PL)  LB, mar.quest
Raman Spectroscopy  LB, mar.quest
ECV measurements  LB, mar.quest
Magnetotransport/Hall  LB, mar.quest

Contact

Name Contact
C. Becker
CB
Tel.: 06421 / 28-22260
E-Mail: celina.becker@physik
Dr. A. Beyer
AB
Tel.: 06421 / 28-25704
E-Mail: andreas.beyer@physik
M. Hellwig
MH
Tel.: 06421 / 28-23458
E-Mail: michael.hellwig@staff
Stefan Reinhard
SR
Tel.: 06421 / 28-25691
E-Mail: stefan.reinhard@physik
Prof. Dr. K. Volz
KV
Tel.: 06421 / 28-22297
E-Mail: kerstin.volz@physik

To complete an email address please add the following string ".uni-marburg.de".