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Core facility Semiconductor Epitaxy

Photo: Jan Hosan

Reactors for metal-organic vapor phase epitaxy (MOCVD) and atomic layer deposition (ALD)

Device Special characteristics Location  person
(Details S.b.)
2 x 300mm Crius Cluster
(Aixtron AG)
III/V and SiGeC Epitaxie:
Wafer size: up to 12" (300 mm), CVD machine: Si/Ge/C-epitaxy, MOVPE machine: III/V-epitaxy, Brooks wafer handler for loading and transfer of substrates, Epi Curve TT (LayTec) 
LB, mar.quest SR, JZ, KV
JEOL JEM-Z200FSC
(CRYO ARM™ 200)
Two AIX 200 machines linked by Nitrogen filled glove-box:
Equipped with EpiRAS (Laytec), Equipped with mass spectrometer (Zeiss), Materials: SiGeC, III/V and 2D (e.g. post-transition metal     chalcogenides) 
LB, mar.quest SR, JZ, KV
OXTRON Home-built (MOVPE/CVD) machine:
2 hot sources for low-vapor pressure sources 
LB, mar.quest SR, JZ, KV

Characterization of semiconductors

Device Special characteristics Location person
(Details S.B.)
Atomic force microscopy (AFM) LB, mar.quest
X-ray diffraction (XRD) LB, mar.quest
Photoluminescence (PL)  LB, mar.quest
Raman Spectroscopy  LB, mar.quest
ECV measurements  LB, mar.quest
Magnetotransport/Hall  LB, mar.quest

Contact

Name Contact
C. Becker
CB
Tel.: 06421 / 28-22260
E-Mail: celina.becker@physik
Dr. A. Beyer
AB
Tel.: 06421 / 28-25704
E-Mail: andreas.beyer@physik
M. Hellwig
MH
Tel.: 06421 / 28-23458
E-Mail: michael.hellwig@staff
Stefan Reinhard
SR
Tel.: 06421 / 28-25691
E-Mail: stefan.reinhard@physik
Johannes Zimmet
JZ
Tel.: 06421 / 28-25691
E-Mail: johannes.zimmet@staff
Prof. Dr. K. Volz
KV
Tel.: 06421 / 28-22297
E-Mail: kerstin.volz@physik

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